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TWI705120B - 接合時之半導體晶片的加熱條件設定方法以及非導電性膜之黏度測量方法以及接合裝置 - Google Patents

接合時之半導體晶片的加熱條件設定方法以及非導電性膜之黏度測量方法以及接合裝置 Download PDF

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Publication number
TWI705120B
TWI705120B TW107133700A TW107133700A TWI705120B TW I705120 B TWI705120 B TW I705120B TW 107133700 A TW107133700 A TW 107133700A TW 107133700 A TW107133700 A TW 107133700A TW I705120 B TWI705120 B TW I705120B
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temperature
conductive film
viscosity
bonding
heating
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TW107133700A
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TW201922996A (zh
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中村智宣
前田徹
永井訓
佐伯吉浩
渡辺治
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日商新川股份有限公司
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Abstract

一種使用NCF接合半導體晶片時的半導體晶片的加熱條件設定方法，其根據表示各種溫度上升率中的NCF的相對於溫度的黏度的變化的黏度特性圖、及表示以同一個溫度上升率使加熱開始溫度變化時的NCF的相對於溫度的黏度的變化的加熱開始溫度特性圖，設定加熱開始溫度與溫度上升率。

Description

接合時之半導體晶片的加熱條件設定方法以及非導電性膜之黏度測量方法以及接合裝置
本發明是有關於一種接合時的半導體晶片的加熱條件設定方法以及使用接合裝置的非導電性膜之黏度測量方法及接合裝置的結構。
已提出有一種上下夾入對半導體晶片進行樹脂密封時的樹脂來進行加熱而使其加熱熔融，並檢測此時的樹脂的擴展，藉此測量樹脂的黏度的方法(例如，參照專利文獻1)。
另外，已知有一種根據利用平行平板夾入圓柱狀的試樣並施加了負荷時的厚度的變化來測量試樣的黏度的方法(參照非專利文獻1)
[現有技術文獻]
[專利文獻]
[專利文獻1]日本專利特開2008-145273號公報
[非專利文獻]
[非專利文獻1]白石裕等，「利用貫入法、平行板變形-旋轉法的組合的廣域黏度計的開發」，日本金屬學會誌第60卷第2號(1996)，184頁~191頁
然而，正在採用使於電極上形成有金屬凸塊的半導體晶片反轉，並使金屬凸塊熔融而與基板的電極之間形成合金，藉此將半導體晶片接合於基板上的倒裝晶片接合(flip chip bonding)。於該接合中，為了填充半導體晶片與基板之間的間隙而使用熱硬化性的非傳導性膜(以下，稱為非導電性膜(Non-Conductive Film，NCF))。NCF黏附於半導體晶片的金屬凸塊上，當對半導體晶片進行了加熱時，於金屬凸塊熔融之前軟化並進入半導體晶片與基板之間，若進一步提高溫度，則開始熱硬化。而且，於NCF開始熱硬化後，金屬凸塊熔融而與基板的電極之間形成合金，藉此將半導體晶片接合於基板上。
然而，根據NCF的種類，存在加熱時的硬化延遲，於NCF為軟化狀態下開始金屬凸塊的熔融的情況。於此情況下，因已軟化的NCF的流動，而存在已熔融的金屬凸塊被沖走，將半導體晶片與基板接合的合金的形狀歪曲，無法將半導體晶片與基板適宜地接合的情況。
因此，為了進行適宜的接合，重要的是知道相對於溫度的NCF的黏度的變化特性。但是，相對於溫度的NCF的黏度的變化特性因NCF的加熱速度、加熱開始溫度等各種因素而大幅度變化。因此，必須使NCF的加熱速度、加熱開始溫度等各種參數變化來進行接合試驗，從而決定接合時的半導體晶片的加熱條件， 存在接合的條件設定花費時間這一問題。
因此，本發明將可於短時間內設定接合時的加熱條件作為目的。
本發明的加熱條件設定方法是使用非導電性膜接合半導體晶片時的半導體晶片的加熱條件設定方法，其特徵在於：根據表示各種溫度上升率中的非導電性膜的相對於溫度的黏度的變化的黏度特性圖、及表示以同一個溫度上升率使加熱開始溫度變化時的非導電性膜的相對於溫度的黏度的變化的加熱開始溫度特性圖的任一者或兩者，設定加熱開始溫度與溫度上升率。
於本發明的加熱條件設定方法中，接合是使形成於半導體晶片上的金屬凸塊熔融而與基板或其他半導體晶片的電極之間形成合金，藉此將半導體晶片接合於基板或其他半導體晶片上，並使非導電性膜熱硬化來填充半導體晶片與基板或其他半導體晶片之間的間隙者，且加熱開始溫度與溫度上升率的設定亦可設為選擇於比金屬凸塊的熔融開始溫度低的溫度下非導電性膜的黏度變成硬化黏度以上的加熱開始溫度與溫度上升率的組合。
於本發明的加熱條件設定方法中，黏度特性圖亦可為如下者：於將非導電性膜夾入接合平台與接合工具之間並以固定的負荷進行了按壓的狀態下，一面以各種溫度上升率使非導電性膜的溫度上升，一面測量接合工具的下降量，根據接合工具的下降量算出非導電性膜的黏度，並作為各種溫度上升率中的非導電性 膜的相對於溫度的黏度的變化特性而輸出。
於本發明的加熱條件設定方法中，加熱開始溫度特性圖亦可為如下者：於將非導電性膜夾入接合平台與接合工具之間並以固定的負荷進行了按壓的狀態下，一面以同一個溫度上升率使非導電性膜的溫度自各種加熱開始溫度上升，一面測量接合工具的下降量，根據接合工具的下降量算出非導電性膜的黏度，並作為以同一個溫度上升率使加熱開始溫度變化時的非導電性膜的相對於溫度的黏度的變化特性而輸出。
於本發明的加熱條件設定方法中，亦可根據經設定的加熱開始溫度與溫度上升率，設定對於對半導體晶片進行加熱的加熱器的溫度指令。
藉此，本發明的加熱條件設定方法可於短時間內設定接合時的加熱條件。
本發明的黏度測量方法是使用接合裝置的非導電性膜之黏度測量方法，其特徵在於：於將非導電性膜夾入接合平台與接合工具之間並以固定的負荷進行了按壓的狀態下，一面以規定的溫度上升率使非導電性膜的溫度上升，一面測量接合工具的下降量，且根據接合工具的下降量算出非導電性膜的黏度。
本發明的接合裝置的特徵在於包括：接合平台，載置非導電性膜；接合工具，與接合平台一同夾入非導電性膜；接合頭，於上下方向上驅動接合工具；加熱器，內置於接合頭中；以及控制部，調整接合頭的高度與加熱器的輸出；控制部於使接合頭下 降並以固定的負荷對非導電性膜進行了按壓的狀態下，一面藉由加熱器以規定的溫度上升率使非導電性膜的溫度上升，一面測量接合工具的下降量，且根據接合工具的下降量算出非導電性膜的黏度。
藉此，可利用接合裝置簡便地測量非導電性膜的黏度。
本發明可於短時間內設定接合時的加熱條件。
10:接合平台
12、23:加熱器
14、26:控制器
20:接合頭
21:底座
22:加熱塊
24:接合工具
25:驅動部
31、32:半導體晶片
40:NCF
50:黏度特性圖
60:加熱開始溫度特性圖
90:控制部
91、92:溫度感測器
100:接合裝置
a:實線
b:點劃線
c:雙點劃線
c1:三角劃線
c2:×劃線
d:圓圈劃線
e:曲線
f:曲線
A、B、C、D:溫度上升率
F:按壓負荷
H:厚度(高度)
T0:半導體晶片31的溫度(加熱開始溫度)
T01、T02:加熱開始溫度
T1、T2、T3、T4、T5、T6、TB:溫度
t0:短時間
t1:時間TW：金屬凸塊的熔融開始溫度
V:黏度
VS:硬化黏度
S101~S104:步驟
圖1是表示本發明的實施方式中的半導體晶片的加熱條件設定方法的流程圖。
圖2是表示利用接合裝置進行非導電性膜(NCF)的黏度測量的狀態的說明圖。
圖3是黏度特性圖的一例。
圖4是加熱開始溫度特性圖的一例。
圖5(a)及圖5(b)是表示根據所選擇的加熱開始溫度與溫度上升率的NCF的溫度的時間變化與加熱器溫度指令值的圖表。
圖6是表示以圖5(a)及圖5(b)中所設定的加熱器溫度指令值進行了接合時的半導體晶片、NCF的溫度的時間變化與NCF的黏度的時間變化的圖表。
以下，一面參照圖式，一面對實施方式的加熱條件設定 方法進行說明。如圖1所示，實施方式的加熱條件設定方法包括：圖1的步驟S101中所示的黏度特性圖生成步驟，圖1的步驟S102中所示的加熱開始溫度特性圖生成步驟，圖1的步驟S103中所示的加熱開始溫度、溫度上升率選擇步驟，及圖1的步驟S104中所示的加熱器溫度指令設定步驟。
首先一面參照圖2、圖3，一面對黏度特性圖生成步驟進行說明。如圖2所示，NCF 40的黏度的測量是使用接合裝置100來進行。
如圖2所示，接合裝置100包括：接合平台10，將半導體晶片32真空吸附於表面上；接合工具24，真空吸附半導體晶片31；接合頭20；以及控制部90。接合頭20包括：底座21；加熱塊22，安裝於底座21上；以及驅動部25，於上下方向上驅動底座21。接合工具24藉由真空吸附而固定於加熱塊22上。於接合平台10中內置有對半導體晶片32進行加熱的加熱器12，於加熱塊22中內置有對半導體晶片31進行加熱的加熱器23。於加熱器12、加熱器23上連接有調整朝加熱器12、加熱器23中的供給電力的控制器14、控制器26。控制部90是於內部包括中央處理單元(Central Processing Unit，CPU)與存儲器的電腦。
接合頭20的驅動部25根據控制部90的指令而於上下方向上驅動接合工具24，並且將接合工具24的高度與接合工具24的按壓負荷F輸出至控制部90中。於加熱塊22上安裝有檢測加熱塊22的溫度的溫度感測器91。另外，於接合裝置100中安裝 有檢測NCF 40的溫度的溫度感測器92。溫度感測器92例如亦可為非接觸式的溫度檢測器。溫度感測器91、溫度感測器92所取得的溫度資料被輸入至控制部90中。
如圖2所示，將半導體晶片32真空吸附於接合平台10上，並將厚度為H的NCF 40載置於半導體晶片32上。另外，使半導體晶片31真空吸附於接合工具24的表面上。而且，控制部90使接合頭20下降來使半導體晶片31抵接於NCF 40上，而將NCF 40夾入半導體晶片31、半導體晶片32之間。藉此，NCF 40經由半導體晶片31、半導體晶片32而夾入接合平台10與接合工具24之間。然後，控制部90使接合頭20略微下降，而以固定的按壓負荷F按壓NCF。此時，接合平台10的溫度為溫度TB，半導體晶片31的溫度為溫度T0。
控制部90一面藉由驅動部25以按壓負荷F變成固定的方式進行調整，一面調節控制器26來增加朝加熱器23中的通電電力，而使NCF 40的溫度以規定的溫度上升率上升。若NCF 40的溫度上升，則NCF 40軟化且高度H減少，接合工具24下降。控制部90藉由接合頭20的下降量來檢測高度H的變化。
此處，若將施加至NCF 40中的按壓負荷設為F(N)，將NCF 40的厚度設為H(m)，將時間設為t(sec)，將試樣的NCF40的體積設為Q(m3)，則NCF 40的黏度V(Pa‧S)可藉由下式來算出(例如，參照非專利文獻1)。
V=2*π*F*H5/3*Q*(-dH/dt)(2*π*H3+Q)----(式1)
控制部90將溫度上升率設為A(℃/s)，使NCF 40的溫度自T0起上升，每當接合工具24的高度減少時藉由(式1)來算出NCF 40的黏度V。於是，可獲得如圖3的實線a所示的特性曲線。如圖3的實線a所示，若溫度上升，則NCF 40軟化且黏度V降低至硬化黏度VS以下為止。若自此進一步提高溫度，則NCF 40的熱硬化開始，於溫度T1下超過硬化黏度VS。其後，NCF 40的黏度藉由熱硬化而急速地上升。
若將溫度上升率設為比A(℃/s)大的B(℃/s)，並進行相同的試驗，則如點劃線b所示，NCF 40因溫度的上升而軟化後，藉由熱硬化而於溫度T2(T2>T1)下超過硬化黏度VS，其後，黏度V急速地上升。同樣地，於溫度上升率為C(℃/s)(C>B)的情況下，如雙點劃線c所示，NCF 40藉由熱硬化而於溫度T3(T3>T2)下超過硬化黏度VS，於溫度上升率為D(℃/s)(D>C)的情況下，如圓圈劃線d所示，於溫度T4(T4>T3)下超過硬化黏度VS。
如此，若對NCF 40進行加熱，則溫度上升率變得越大，黏度V藉由熱硬化而超過硬化黏度VS的溫度變得越高。
黏度特性圖50是將如圖3中所示的實線a、點劃線b、雙點劃線c、圓圈劃線d般，表示各種溫度上升率中的非導電性膜的相對於溫度的黏度V的變化特性的線彙集於一個圖表中而成的 圖。圖3的溫度TW表示金屬凸塊，例如焊料金屬凸塊的熔融開始溫度。其後對此進行說明。
繼而，一面參照圖4，一面對加熱開始溫度特性圖60進行說明。NCF 40的黏度測量方法與先前說明的黏度特性圖的生成的情況相同，因此省略說明。
圖4表示加熱開始溫度特性圖60的一例。圖4中所示的雙點劃線c與先前說明的圖3的雙點劃線c相同，表示加熱開始溫度為T0，溫度上升率為C(℃/s)時的相對於NCF 40的溫度的NCF 40的黏度V的變化。圖4中所示的三角劃線c1表示加熱開始溫度為T01(T01>T0)，溫度上升率為與雙點劃線c相同的C(℃/s)時的相對於NCF 40的溫度的NCF 40的黏度V的變化，NCF 40藉由熱硬化而於溫度T5下超過硬化黏度VS。另外，圖4中所示的×劃線c2表示加熱開始溫度為T02(T02>T01)，溫度上升率為與雙點劃線c相同的C(℃/s)時的相對於NCF 40的溫度的NCF 40的黏度V的變化，NCF 40藉由熱硬化而於溫度T6下超過硬化黏度VS。
如圖4所示，加熱開始溫度變得越高，黏度V超過硬化黏度VS的溫度變得越低。如此，加熱開始溫度特性圖是將如圖4中所示的雙點劃線c、三角劃線c1、×劃線c2般，表示以同一個溫度上升率使加熱開始溫度變化時的非導電性膜的相對於溫度的黏度的變化特性的線彙集於一個圖表中而成的圖。
繼而，對圖1的步驟S103中所示的加熱開始溫度、溫 度上升率的選擇進行說明。
當進行使形成於半導體晶片31上的金屬凸塊熔融而與基板的電極之間形成合金，藉此將半導體晶片31接合於基板上，並使NCF 40熱硬化來填充半導體晶片31與基板之間的間隙的接合時，重要的是於金屬凸塊熔融之前NCF 40軟化並進入半導體晶片31與基板之間，於NCF 40開始熱硬化後金屬凸塊熔融而與基板的電極之間形成合金。因此，加熱開始溫度與溫度上升率必須設為於比金屬凸塊的熔融開始溫度TW低的溫度下NCF 40的黏度V變成硬化黏度VS以上的加熱開始溫度與溫度上升率的組合。
首先，對使用圖3中所示的黏度特性圖50選擇加熱開始溫度與溫度上升率的組合的情況進行說明。圖3的TW是金屬凸塊的熔融開始溫度。於加熱開始溫度為T0的情況，且溫度上升率為A(℃/s)、B(℃/s)的情況下，如實線a、點劃線b所示，於比金屬凸塊的熔融開始溫度TW低的溫度T1、T2下NCF 40的黏度V變成硬化黏度VS以上，因此加熱開始溫度T0，溫度上升率A、溫度上升率B是可採用的組合。另一方面，於溫度上升率為C(℃/s)、D(℃/s)的情況下，如雙點劃線c、圓圈劃線d所示，若溫度不變得比金屬凸塊的熔融開始溫度TW高，則NCF 40的黏度V不變成硬化黏度VS以上。因此，金屬凸塊的熔融狀態與NCF的流動狀態重疊，已熔融的金屬凸塊因NCF 40的流動而自電極上流動，無法進行適宜的接合。因此，加熱開始溫度T0，溫度上升率C、溫度上升率D是無法採用的組合。
此處，溫度上升率越高，越可縮短接合的節拍時間，因此選擇可採用的加熱開始溫度與溫度上升率的組合之中，溫度上升率大的組合。
即，自圖3的黏度特性圖中，選擇於比金屬凸塊的熔融開始溫度TW低的溫度下黏度V變成硬化黏度VS以上的加熱開始溫度與溫度上升率的組合，其中，選擇溫度上升率最高的組合作為加熱條件。
另外，以溫度上升率更大的C(℃/s)進行接合時的加熱條件參照圖4中所示的加熱開始溫度特性圖60，選擇作為於比金屬凸塊的熔融開始溫度TW低的溫度下黏度V變成硬化黏度VS以上的加熱開始溫度與溫度上升率的組合的加熱開始溫度為T02、溫度上升率為C(℃/s)的組合作為加熱條件。
於以上的說明中，根據圖4中所示的加熱開始溫度特性圖60中記載的線選擇加熱條件，但並不限定於此，例如亦可對三角劃線c1與×劃線c2進行內插來將加熱開始溫度設定成比T02略低的溫度。
如以上所說明般，實施方式的加熱條件設定方法無需以許多加熱條件進行試驗接合，因此可於短時間內進行加熱條件的設定。
繼而，如圖1的步驟S104所示，對根據所選擇的加熱開始溫度與溫度上升率，設定加熱器23的溫度指令的步驟進行說明。
圖5(a)是表示加熱開始溫度為T02，溫度上升率為C(℃/s)時的半導體晶片31或NCF 40的相對於時間(t1)的溫度上升的曲線(f)。在對於加熱器23的溫度指令與半導體晶片31或NCF 40的溫度上升之間存在時間延遲。該時間延遲藉由事先進行的試驗等而先進行數值模型的構成、參數設定。然後，使用該設定參數與數值模型，圖5(b)是表示加熱開始溫度為T02的半導體晶片31或NCF 40的相對於時間的溫度上升的曲線(e)，如圖5(b)般生成對於加熱器23的溫度指令，所述對於加熱器23的溫度指令是如變成如圖5(a)的溫度變化般的溫度指令。而且，於接合時，以圖5(b)中所示的溫度指令控制加熱器23。其結果，如圖6所示，可變成如NCF 40的黏度V剛到達硬化黏度VS之後金屬凸塊熔融般的有效率的接合條件。如此，根據本實施方式的加熱條件設定方法，可於短時間(t0)內進行接合條件的設定。
以上的說明是對使用黏度特性圖50選擇加熱開始溫度與溫度上升率的組合的情況、根據加熱開始溫度特性圖60中記載的線選擇加熱條件的情況進行了說明，但並不限定於如所述般使用任一個圖選擇加熱開始溫度與溫度上升率的組合，亦可使用兩個圖選擇加熱開始溫度與溫度上升率的組合。
S101~S104‧‧‧步驟

Claims (8)

  1. 一種加熱條件設定方法，其特徵在於，是使用非導電性膜接合半導體晶片時的半導體晶片的加熱條件設定方法，其中根據黏度特性圖及加熱開始溫度特性圖的任一者或兩者，設定加熱開始溫度與溫度上升率；所述黏度特性圖表示各種溫度上升率中的非導電性膜的相對於溫度的黏度的變化，所述加熱開始溫度特性圖表示以同一個溫度上升率使加熱開始溫度變化時的非導電性膜的相對於溫度的黏度的變化，其中接合是使形成於半導體晶片上的金屬凸塊熔融而與基板或其他半導體晶片的電極之間形成合金，藉此將半導體晶片接合於基板或其他半導體晶片上，並使非導電性膜熱硬化來填充半導體晶片與基板或其他半導體晶片之間的間隙者，且加熱開始溫度與溫度上升率的設定選擇於比金屬凸塊的熔融開始溫度低的溫度下非導電性膜的黏度變成硬化黏度以上的加熱開始溫度與溫度上升率的組合。
  2. 如申請專利範圍第1項所述的加熱條件設定方法，其中黏度特性圖是如下者：於將非導電性膜夾入接合平台與接合工具之間並以固定的負荷進行了按壓的狀態下，一面以各種溫度上升率使非導電性膜的溫度上升，一面測量接合工具的下降量，根據接合工具的下降量算出非導電性膜的黏度，並作為各種溫度上升率中的非導電性膜的相對於溫度的黏度的變化特性而輸出。
  3. 如申請專利範圍第1項所述的加熱條件設定方法，其中 加熱開始溫度特性圖是如下者：於將非導電性膜夾入接合平台與接合工具之間並以固定的負荷進行了按壓的狀態下，一面以同一個溫度上升率使非導電性膜的溫度自各種加熱開始溫度上升，一面測量接合工具的下降量，根據接合工具的下降量算出非導電性膜的黏度，並作為以同一個溫度上升率使加熱開始溫度變化時的非導電性膜的相對於溫度的黏度的變化特性而輸出。
  4. 如申請專利範圍第1項所述的加熱條件設定方法，其根據經設定的加熱開始溫度與溫度上升率，設定對於對半導體晶片進行加熱的加熱器的溫度指令。
  5. 如申請專利範圍第2項所述的加熱條件設定方法，其根據經設定的加熱開始溫度與溫度上升率，設定對於對半導體晶片進行加熱的加熱器的溫度指令。
  6. 如申請專利範圍第3項所述的加熱條件設定方法，其根據經設定的加熱開始溫度與溫度上升率，設定對於對半導體晶片進行加熱的加熱器的溫度指令。
  7. 一種非導電性膜之黏度測量方法，其是使用接合裝置的非導電性膜之黏度測量方法，於將非導電性膜夾入接合平台與接合工具之間並以固定的負荷進行了按壓的狀態下，一面以規定的溫度上升率使非導電性膜的溫度上升，一面測量接合工具的下降量，且根據接合工具的下降量算出非導電性膜的黏度。
  8. 一種接合裝置，其特徵在於包括： 接合平台，載置非導電性膜；接合工具，與所述接合平台一同夾住所述非導電性膜；接合頭，於上下方向上驅動所述接合工具；加熱器，內置於所述接合頭中；以及控制部，調整所述接合頭的高度與所述加熱器的輸出；所述控制部於使所述接合頭下降並以固定的負荷對所述非導電性膜進行了按壓的狀態下，一面藉由所述加熱器以規定的溫度上升率使所述非導電性膜的溫度上升，一面測量所述接合工具的下降量，且根據所述接合工具的下降量算出所述非導電性膜的黏度。
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