TWI697709B - Pixel array substrate - Google Patents
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本發明是有關於一種畫素陣列基板,且特別是有關於一種顯示面板的畫素陣列基板。The present invention relates to a pixel array substrate, and in particular to a pixel array substrate of a display panel.
隨著顯示科技的發達與普及,消費者除了要求顯示面板具有高解析度、高對比、高色飽合度及廣視角等規格外,更要求顯示面板的外觀美感。舉例而言,消費者希望能顯示面板的邊框窄,甚至無邊框。一般而言,設置於顯示面板的主動區的多條訊號線需透過設置於顯示面板之邊框區(或者說,周邊區)的多條扇出走線電性連接至顯示面板的驅動元件。當顯示面板之解析度高時,訊號線的數量眾多,數量眾多的訊號線需透過數量眾多的扇出走線才能電性連接至顯示面板的驅動元件。然而,當扇出走線的數量眾多時,顯示面板之邊框的寬度縮減不易。With the development and popularization of display technology, consumers not only require display panels with specifications such as high resolution, high contrast, high color saturation, and wide viewing angles, but also the aesthetic appearance of the display panels. For example, consumers want to be able to display panels with narrow or no borders. Generally speaking, the multiple signal lines provided in the active area of the display panel need to be electrically connected to the driving elements of the display panel through multiple fan-out traces provided in the frame area (or peripheral area) of the display panel. When the resolution of the display panel is high, there are a large number of signal lines, and the large number of signal lines need to be electrically connected to the driving components of the display panel through a large number of fan-out traces. However, when the number of fan-out wires is large, it is not easy to reduce the width of the frame of the display panel.
本發明提供一種畫素陣列基板,其周邊區的寬度窄。The present invention provides a pixel array substrate whose peripheral area has a narrow width.
本發明的一種畫素陣列基板,包括基底、多條訊號線、多個畫素結構、驅動元件及多條扇出走線。多條訊號線設置於基底上。多個畫素結構電性連接至多條訊號線。驅動元件設置於基底上。多條扇出走線的每一條電性連接於多條訊號線的一條及驅動元件。多條扇出走線包括一第一扇出走線及一第二扇出走線。第一扇出走線包括連接至驅動元件的第一段、連接至第一段的第二段及連接至第二段的第三段。第一扇出走線的第一段的片電阻及第一扇出走線的第三段的片電阻小於第一扇出走線的第二段的片電阻。第二扇出走線包括連接至驅動元件的第一段及連接至第二扇出走線的第一段的第二段。第二扇出走線的第一段對應第一扇出走線的第一段設置。第二扇出走線的第二段對應第一扇出走線的第二段及第三段設置。第二扇出走線的第二段的片電阻小於第二扇出走線的第一段的片電阻。A pixel array substrate of the present invention includes a base, multiple signal lines, multiple pixel structures, driving elements, and multiple fan-out wiring lines. A plurality of signal lines are arranged on the substrate. The multiple pixel structures are electrically connected to multiple signal lines. The driving element is arranged on the substrate. Each of the plurality of fan-out wires is electrically connected to one of the plurality of signal wires and the driving element. The multiple fan-out wirings include a first fan-out wiring and a second fan-out wiring. The first fan-out wiring includes a first section connected to the driving element, a second section connected to the first section, and a third section connected to the second section. The sheet resistance of the first section of the first fan-out wiring and the sheet resistance of the third section of the first fan-out wiring are smaller than the sheet resistance of the second section of the first fan-out wiring. The second fan-out wiring includes a first section connected to the driving element and a second section connected to the first section of the second fan-out wiring. The first segment of the second fan-out wiring corresponds to the first segment of the first fan-out wiring. The second section of the second fan-out wiring is set corresponding to the second and third sections of the first fan-out wiring. The sheet resistance of the second section of the second fan-out wiring is smaller than the sheet resistance of the first section of the second fan-out wiring.
在本發明的一實施例中,上述的至少一第一扇出走線的每一條更包括轉接結構。轉接結構包括第一導電圖案、第二導電圖案、第一絕緣層、第二絕緣層以及橋接圖案。第一導電圖案直接連接於第一扇出走線的第二段。第二導電圖案直接連接於第一扇出走線的第三段。第一絕緣層設置於第一導電圖案與第二導電圖案之間。第二絕緣層設置於第二導電圖案上,且具有至少一接觸窗。橋接圖案設置於第二絕緣層上,且透過第二絕緣層的至少一接觸窗電性連接至第一導電圖案及第二導電圖案。In an embodiment of the present invention, each of the aforementioned at least one first fan-out wiring further includes a switching structure. The transfer structure includes a first conductive pattern, a second conductive pattern, a first insulating layer, a second insulating layer, and a bridge pattern. The first conductive pattern is directly connected to the second section of the first fan-out wiring. The second conductive pattern is directly connected to the third section of the first fan-out wiring. The first insulating layer is disposed between the first conductive pattern and the second conductive pattern. The second insulating layer is disposed on the second conductive pattern and has at least one contact window. The bridge pattern is disposed on the second insulating layer, and is electrically connected to the first conductive pattern and the second conductive pattern through at least one contact window of the second insulating layer.
在本發明的一實施例中,上述的第一絕緣層具有接觸窗,第一絕緣層之接觸窗的邊緣與第二導電圖案之邊緣的一部分及第二絕緣層的至少一接觸窗之邊緣的一部分實質上切齊。In an embodiment of the present invention, the above-mentioned first insulating layer has a contact window, the edge of the contact window of the first insulating layer and a part of the edge of the second conductive pattern and the edge of at least one contact window of the second insulating layer One part is substantially aligned.
在本發明的一實施例中,上述的多條訊號線在第一方向上排列,至少一第一扇出走線包括多條第一扇出走線,多條第一扇出走線的多個轉接結構在第二方向上排列,且第一方向垂直於第二方向。In an embodiment of the present invention, the above-mentioned multiple signal lines are arranged in a first direction, at least one first fan-out wiring includes multiple first fan-out wirings, and a plurality of transitions for the multiple first fan-out wirings The structures are arranged in the second direction, and the first direction is perpendicular to the second direction.
在本發明的一實施例中,上述的多條訊號線在第一方向上排列,至少一第一扇出走線包括多條第一扇出走線,多條第一扇出走線的多個轉接結構在第三方向上排列,其中第一方向與第三方向交錯且不相垂直。In an embodiment of the present invention, the above-mentioned multiple signal lines are arranged in a first direction, at least one first fan-out wiring includes multiple first fan-out wirings, and a plurality of transitions for the multiple first fan-out wirings The structures are arranged in the third direction, where the first direction is staggered and not perpendicular to the third direction.
在本發明的一實施例中,上述的至少一第一扇出走線包括多條第一扇出走線,多條第一扇出走線分別包括多個轉接結構,多條擬直線通過多個轉接結構,多條擬直線的每一條通過多個轉接結構之相鄰的兩個轉接結構,而多條擬直線連接成一擬折線。In an embodiment of the present invention, the above-mentioned at least one first fan-out wiring includes a plurality of first fan-out wirings, each of the plurality of first fan-out wirings includes a plurality of transition structures, and the plurality of pseudo-straight lines pass through a plurality of turns. In the connection structure, each of the plurality of pseudo straight lines passes through two adjacent transition structures of the plurality of transition structures, and the plurality of pseudo straight lines are connected to form a pseudo polyline.
在本發明的一實施例中,上述的至少一第一扇出走線包括多條第一扇出走線,多條第一扇出走線分別包括多個轉接結構,至少一第二扇出走線包括多條第二扇出走線,多條第二扇出走線的多個第二段分別具有多個彎曲部,且多條第二扇出走線的多個彎曲部分別對應多條第一扇出走線的多個轉接結構設置。In an embodiment of the present invention, the aforementioned at least one first fan-out wiring includes a plurality of first fan-out wirings, each of the plurality of first fan-out wirings includes a plurality of switching structures, and at least one second fan-out wiring includes Multiple second fan-out wirings, multiple second segments of multiple second fan-out wirings each have multiple bends, and multiple bends of multiple second fan-out wirings respectively correspond to multiple first fan-out wirings Of multiple transfer structure settings.
在本發明的一實施例中,上述的至少一第一扇出走線之每一條的第二段於基底的一垂直投影與至少一第二扇出走線之每一條的第二段於基底的一垂直投影具有一第一間距S1,至少一第一扇出走線之每一條的第三段於基底的一垂直投影與至少一第二扇出走線之每一條的第二段於基底的一垂直投影具有一第二間距S2,而S1<S2。In an embodiment of the present invention, a vertical projection of the second section of each of the above-mentioned at least one first fan-out trace on the substrate and a second section of each of the at least one second fan-out trace on the substrate The vertical projection has a first pitch S1, a vertical projection of the third section of each of at least one first fan-out trace on the substrate and a vertical projection of the second section of each of at least one second fan-out trace on the substrate There is a second spacing S2, and S1<S2.
在本發明的一實施例中,上述的至少一第一扇出走線之每一條的第二段的一部分具有一線寬W1,至少一第二扇出走線之每一條的第二段的一部分具有一線寬W2,而W2>W1。In an embodiment of the present invention, a part of the second segment of each of the at least one first fan-out trace has a line width W1, and a part of the second segment of each of the at least one second fan-out trace has a line Width W2, and W2>W1.
在本發明的一實施例中,上述的至少一第一扇出走線的每一條的第一段具有長度L1,至少一第一扇出走線的每一條的第二段具有長度L2,至少一第一扇出走線的每一條的第三段具有長度L3,而 。 In an embodiment of the present invention, the first section of each of the at least one first fan-out wiring has a length L1, the second section of each of the at least one first fan-out wiring has a length L2, and at least one The third section of each fan-out trace has a length of L3, and .
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
現將詳細地參考本發明的示範性實施例,示範性實施例的實例說明於附圖中。只要有可能,相同元件符號在圖式和描述中用來表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present invention, and examples of the exemplary embodiments are illustrated in the accompanying drawings. Whenever possible, the same component symbols are used in the drawings and descriptions to indicate the same or similar parts.
應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件“上”或“連接到”另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為“直接在另一元件上”或“直接連接到”另一元件時,不存在中間元件。如本文所使用的,“連接”可以指物理及/或電性連接。再者,“電性連接”或“耦合”係可為二元件間存在其它元件。It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected" to another element, it can be directly on or connected to the other element, or Intermediate elements can also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements. As used herein, "connected" can refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that there are other elements between two elements.
本文使用的“約”、“近似”、或“實質上”包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,“約”可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本文使用的“約”、“近似”或“實質上”可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used herein, "about", "approximately", or "substantially" includes the stated value and the average value within an acceptable range of deviation from the specific value determined by a person of ordinary skill in the art, taking into account the measurement in question and the The specific amount of measurement-related error (ie, the limitation of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, "about", "approximately" or "substantially" as used herein can be based on optical properties, etching properties or other properties to select a more acceptable range of deviation or standard deviation, and not one standard deviation can be applied to all properties .
除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meaning in the context of related technologies and the present invention, and will not be interpreted as idealized or excessive The formal meaning, unless explicitly defined as such in this article.
圖1為本發明一實施例之畫素陣列基板的上視示意圖。圖2為本發明一實施例之畫素陣列基板的局部R1的放大示意圖。圖3為本發明一實施例之畫素陣列基板的局部R2的放大示意圖。圖4為本發明一實施例之畫素陣列基板的剖面示意圖。圖4係對應圖2的剖線І-Ι’。圖5為本發明一實施例之畫素陣列基板的剖面示意圖。圖5係對應圖3的剖線П-П’。圖6為本發明一實施例之畫素陣列基板的剖面示意圖。圖6係對應圖2的剖線Ш-Ш’。FIG. 1 is a schematic top view of a pixel array substrate according to an embodiment of the invention. 2 is an enlarged schematic diagram of a part R1 of a pixel array substrate according to an embodiment of the invention. 3 is an enlarged schematic diagram of a part R2 of a pixel array substrate according to an embodiment of the invention. 4 is a schematic cross-sectional view of a pixel array substrate according to an embodiment of the invention. Figure 4 corresponds to the section line І-1' of Figure 2. 5 is a schematic cross-sectional view of a pixel array substrate according to an embodiment of the invention. Figure 5 corresponds to the section line П-П' of Figure 3. 6 is a schematic cross-sectional view of a pixel array substrate according to an embodiment of the invention. Figure 6 corresponds to the section line Ш-Ш' of Figure 2.
請參照圖1,畫素陣列基板100包括基底110。基底110主要是用以承載畫素陣列基板100之元件之用。舉例而言,在本實施例中,基底110的材質可為玻璃、石英、有機聚合物、或是不透光/反射材料(例如:導電材料、晶圓、陶瓷、或其它可適用的材料)、或是其它可適用的材料。Please refer to FIG. 1, the
畫素陣列基板100還包括設置於基底110上的多條訊號線SL1、設置於基底110上的多條訊號線SL2及設置於基底110上的多個畫素結構PX。畫素結構PX可包括主動元件T及電性連接至主動元件T的畫素電極164。舉例而言,在本實施例中,主動元件T包括薄膜電晶體,薄膜電晶體具有源極S、閘極G與汲極D,而畫素電極164電性連接至薄膜電晶體的汲極D。多條訊號線SL1在方向d1上排列,多條訊號線SL2在方向d2上排列,其中方向d1與方向d2交錯。舉例而言,在本實施例中,方向d1與方向d2可選擇性地垂直,但本發明不以此為限。多個畫素結構PX與多條訊號線SL1及多條訊號線SL2電性連接。舉例而言,在本實施例中,畫素結構PX之主動元件T的源極S電性連接至訊號線SL1,而畫素結構PX之主動元件T的閘極G電性連接至訊號線SL2。也就是說,在本實施例中,訊號線SL1可以是資料線,訊號線SL2可以是掃描線,但本發明不以此為限。The
畫素陣列基板100還包括驅動元件170,設置於基底110上。舉例而言,在本實施例中,驅動元件170可包括積體電路(integrated circuit;IC),但本發明不以此為限。在本實施例中,驅動元件170具有一中心軸170X,基底110具有一中心軸110X,中心軸170X的延伸方向(例如但不限於:方向d2)及中心軸110X的延伸方向(例如但不限於:方向d2)與多條訊號線SL1的排列方向d1交錯。值得注意的是,在本實施例中,於方向d1上,驅動元件170的中心軸170X與基底110的中心軸110X具有一距離K。也就是說,在本實施例中,驅動元件170的中心軸170X係偏離基底110的中心軸110X,但本發明不以此為限。The
畫素陣列基板100還包括多條扇出走線FL1、FL2,設置於基底110上。具體而言,在本實施例中,多條扇出走線FL1、FL2於基底110上的多個垂直投影可位於多個畫素結構PX於基底110上的多個垂直投影與驅動元件170於基底110上的一垂直投影之間。多條扇出走線FL1、FL2的每一條電性連接於多條訊號線SL1、SL2的其中一條及驅動元件170。在圖1的實施例中,多條扇出走線FL1、FL2的每一條以電性連接至對應的一條訊號線SL1為示例。然而,本發明不限於此,在另一實施例中,多條扇出走線FL1、FL2也可電性連接至多條訊號線SL1及多條訊號線SL2;在又一實施例中,多條扇出走線FL1、FL2的每一條也可電性連接於對應的一條訊號線SL2。The
請參照圖1、圖2及圖3,畫素陣列基板100的多條扇出走線FL1、FL2包括第一扇出走線FL1。在本實施例中,一條第一扇出走線FL1包括由驅動元件170向對應之一條訊號線SL1依序排列的第一段141、轉接結構TS1、第二段122、轉接結構TS2及第三段144。驅動元件170連接至第一段141。第一段141連接至轉接結構TS1。轉接結構TS1連接至第二段122。第二段122連接至轉接結構TS2。轉接結構TS2連接至第三段144。第三段144連接至對應的一條訊號線SL1。Referring to FIGS. 1, 2 and 3, the plurality of fan-out traces FL1 and FL2 of the
在本實施例中,第一扇出走線FL1之第一段141的片電阻與第一扇出走線FL1之第三段144的片電阻實質上可相同。在本實施例中,第一扇出走線FL1的第一段141與第一扇出走線FL1的第三段144可選擇性地形成於同一導電層,例如但不限於:第二金屬層。舉例而言,在本實施例中,第一扇出走線FL1之第一段141的材質及第一扇出走線FL1之第三段144的材質可以是鉬(Mo),鉬的片電阻約0.47 Ω/□。然而,本發明不限於此,第一扇出走線FL1之第一段141及第一扇出走線FL1之第三段144也可選用其它適當的導電材料。In this embodiment, the sheet resistance of the
在本實施例中,第一扇出走線FL1之第一段141的片電阻及第一扇出走線FL1之第三段144的片電阻小於第一扇出走線FL1之第二段122的片電阻。舉例而言,在本實施例中,第一扇出走線FL1之第二段122的材質可以是鈦、鋁與鈦(Ti/Al/Ti)的堆疊結構,鈦、鋁與鈦之堆疊層的片電阻約0.1 Ω/□。然而,本發明不限於此,第一扇出走線FL1之第二段122也可選用其它適當的導電材料。此外,在本實施例中,第一扇出走線FL1的第二段122例如是形成於第一金屬層;也就是說,第一扇出走線FL1的第二段122與第一扇出走線FL1的第一段141之間設有第一絕緣層130(繪於圖4),第一扇出走線FL1的第二段122與第一扇出走線FL1的第三段144之間設有第一絕緣層130(繪於圖5);但本發明不以此為限。In this embodiment, the sheet resistance of the
請參照圖1,在本實施例中,第一扇出走線FL1的第一段141具有長度L1,第一扇出走線FL1的第二段122具有長度L2,第一扇出走線FL1的第三段144具有長度L3,而
。舉例而言,第一扇出走線FL1之第一段141的長度L1與第一扇出走線FL1之第二段122的長度L2實質上可相等,而第一扇出走線FL1之第三段144的長度L3遠大於第一扇出走線FL1之第一段141的長度L1及第一扇出走線FL1之第二段122的長度L2。
1, in this embodiment, the
請參照圖1、圖2及圖4,在本實施例中,第一扇出走線FL1的轉接結構TS1包括導電圖案121、第一絕緣層130、導電圖案142、第二絕緣層150及橋接圖案161。導電圖案142直接連接於第一扇出走線FL1的第一段141。轉接結構TS1的導電圖案142與第一扇出走線FL1的第一段141可形成於同一膜層。導電圖案121直接連接於第一扇出走線FL1的第二段122。轉接結構TS1的導電圖案121與第一扇出走線FL1的第二段122可形成於同一膜層。第一絕緣層130設置於導電圖案121與導電圖案142之間。第二絕緣層150設置於導電圖案142上,且具有至少一接觸窗151a、151b。1, 2 and 4, in this embodiment, the transition structure TS1 of the first fan-out trace FL1 includes a
舉例而言,在本實施例中,第二絕緣層150可選擇性地具有彼此分離的多個接觸窗151a、151b,分別位於導電圖案121、142上。橋接圖案161設置於第二絕緣層150上,且透過第二絕緣層150的至少一接觸窗151a、151b電性連接至導電圖案121及導電圖案142。在本實施例中,橋接圖案161係透過第二絕緣層150的接觸窗151a及第一絕緣層130的接觸窗131電性連接至導電圖案121,其中第二絕緣層150的接觸窗151a與第一絕緣層130的接觸窗131實質上可切齊,但本發明不以此為限;另一方面,橋接圖案161係透過第二絕緣層150的接觸窗151b電性連接至導電圖案142。在本實施例中,橋接圖案161與畫素電極164可選擇性地形成於同一膜層,但本發明不以此為限。For example, in this embodiment, the second insulating
請參照圖1、圖3及圖5,在本實施例中,第一扇出走線FL1的轉接結構TS2包括導電圖案123、第一絕緣層130、導電圖案143、第二絕緣層150及橋接圖案162。導電圖案123直接連接於第一扇出走線FL1的第二段122。轉接結構TS2的導電圖案123與第一扇出走線FL1的第二段122可形成於同一膜層。導電圖案143直接連接於第一扇出走線FL1的第三段144。轉接結構TS2的導電圖案143與第一扇出走線FL1的第三段144可形成於同一膜層。第一絕緣層130設置於導電圖案123與導電圖案143之間。第二絕緣層150設置於導電圖案143上,且具有至少一接觸窗152a、152b。1, 3 and 5, in this embodiment, the transition structure TS2 of the first fan-out trace FL1 includes a
舉例而言,在本實施例中,第二絕緣層150可選擇性地具有彼此分離的多個接觸窗152a、152b,分別位於導電圖案123、143上。橋接圖案162設置於第二絕緣層150上,且透過第二絕緣層150的至少一接觸窗152a、152b電性連接至導電圖案123及導電圖案143。在本實施例中,橋接圖案162係透過第二絕緣層150的接觸窗152a及第一絕緣層130的接觸窗132電性連接至導電圖案123,其中第二絕緣層150的接觸窗152a與第一絕緣層130的接觸窗132實質上可切齊,但本發明不以此為限;另一方面,橋接圖案162係透過第二絕緣層150的接觸窗152b電性連接至導電圖案143。在本實施例中,橋接圖案162與畫素電極164可選擇性地形成於同一膜層,但本發明不以此為限。For example, in this embodiment, the second insulating
請參照圖1、圖2及圖6,畫素陣列基板100的多條扇出走線FL1、FL2包括第二扇出走線FL2。在本實施例中,一條第二扇出走線FL2包括由驅動元件170向對應之一條訊號線SL1依序排列的第一段124、轉接結構TS3及第二段146。驅動元件170連接至第一段124。第一段124連接至轉接結構TS3。轉接結構TS3連接至第二段146。第二段146連接至對應的另一條訊號線SL1。第二扇出走線FL2的第二段146的片電阻小於第二扇出走線FL2的第一段124的片電阻。Please refer to FIG. 1, FIG. 2 and FIG. 6, the plurality of fan-out traces FL1 and FL2 of the
請參照圖1,第二扇出走線FL2之第一段124對應第一扇出走線FL1之第一段141設置。第二扇出走線FL2之第二段146對應第一扇出走線FL1之第二段122及第三段144設置。舉例而言,在本實施例中,第二扇出走線FL2之第一段124與第一扇出走線FL1之第一段141可分別形成於不同兩膜層(例如但不限於:第一金屬層及第二金屬層),且第二扇出走線FL2之第二段146與第一扇出走線FL1之第二段122可分別形成於不同兩膜層(例如但不限於:第二金屬層及第一金屬層)。藉此,彼此對應設置之第一扇出走線FL1的一部分(例如:第一段141/第二段122)與第二扇出走線FL2(例如:第一段124/第二段146)的一部分於驅動元件170附近能密集設置,進而減少畫素陣列基板100之邊框(boarder)的寬度W。再者,於本實施例中,第一扇出走線FL1之較長的一部分(即第三段144)與第二扇出走線FL2之長度較長的一部分(即第二段146)具有較低的片電阻,因此可避免第一、二扇出走線FL1、FL2之阻抗大幅增加而造成畫素結構PX之充電不足的問題。Please refer to FIG. 1, the
另外,在本實施例中,第一扇出走線FL1與第二扇出走線FL2在靠近驅動元件170處的第一間距S1可小於第一扇出走線FL1與第二扇出走線FL2在遠離驅動元件170處的第二間距S2。舉例而言,第一間距S1可指第一扇出走線FLl之第二段122於基底110的垂直投影與第二扇出走線FL2之第二段146於基底110的垂直投影之間的間距,而第二間距S2可指第一扇出走線FL1之第三段144於基底110的垂直投影與第二扇出走線FL2的第二段146於基底110的垂直投影之間的間距。In addition, in this embodiment, the first distance S1 between the first fan-out wiring FL1 and the second fan-out wiring FL2 near the driving
請參照圖1、圖2及圖6,在本實施例中,第二扇出走線FL2的轉接結構TS3包括導電圖案125、第一絕緣層130、導電圖案145、第二絕緣層150及橋接圖案163。導電圖案125直接連接於第二扇出走線FL2的第一段124。轉接結構TS3的導電圖案125與第二扇出走線FL2的第一段124可形成於同一膜層。導電圖案145直接連接於第二扇出走線FL2的第二段146。轉接結構TS3的導電圖案145與第二扇出走線FL2的第二段146可形成於同一膜層。第一絕緣層130設置於導電圖案125與導電圖案145之間。第二絕緣層150設置於導電圖案145上,且具有至少一接觸窗153a、153b。1, 2 and 6, in this embodiment, the transition structure TS3 of the second fan-out trace FL2 includes a
舉例而言,在本實施例中,第二絕緣層150可選擇性地具有彼此分離的多個接觸窗153a、153b,分別位於導電圖案125、145上。橋接圖案163設置於第二絕緣層150上,且透過第二絕緣層150的至少一接觸窗153a、153b電性連接至導電圖案125及導電圖案145。在本實施例中,橋接圖案163係透過第二絕緣層150的接觸窗153a及第一絕緣層130的接觸窗133電性連接至導電圖案125,其中第二絕緣層150的接觸窗153a與第一絕緣層130的接觸窗133實質上可切齊,但本發明不以此為限;另一方面,橋接圖案163係透過第二絕緣層150的接觸窗153b電性連接至導電圖案145。在本實施例中,橋接圖案163與畫素電極164可選擇性地形成於同一膜層,但本發明不以此為限。For example, in this embodiment, the second insulating
請參照圖1及圖3,在本實施例中,多條訊號線SL1在方向d1上排列,多條第一扇出走線FL1的多個轉接結構TS2在第三方向d3上排列,其中方向d1與方向d3交錯且不相垂直。也就是說,在本實施例中,多個轉接結構TS2的排列方式可以是階梯式。然而,本發明不限於此,根據其它實施例,多個轉接結構TS2的排列方式也可以其它適當形式,以下配合其它圖示舉例說明之。1 and 3, in this embodiment, the multiple signal lines SL1 are arranged in the direction d1, and the multiple switching structures TS2 of the multiple first fan-out wirings FL1 are arranged in the third direction d3, where the direction d1 is staggered and not perpendicular to direction d3. That is to say, in this embodiment, the arrangement of the multiple switching structures TS2 may be stepped. However, the present invention is not limited to this. According to other embodiments, the arrangement of the plurality of switching structures TS2 may also be in other suitable forms, as illustrated below with other illustrations.
圖7為本發明另一實施例之畫素陣列基板的局部R3的放大示意圖。在圖7的實施例中,多條第一扇出走線FL1的多個轉接結構TS2可以選擇性地在第二方向d2上排列,且第二方向d2可垂直於第一方向d1。也就是說,在本實施例中,多個轉接結構TS2的排列方式可以是垂直式。FIG. 7 is an enlarged schematic diagram of a part R3 of a pixel array substrate according to another embodiment of the present invention. In the embodiment of FIG. 7, the plurality of switching structures TS2 of the plurality of first fan-out traces FL1 can be selectively arranged in the second direction d2, and the second direction d2 can be perpendicular to the first direction d1. In other words, in this embodiment, the arrangement of the multiple switching structures TS2 may be vertical.
圖8為本發明又一實施例之畫素陣列基板的局部R4的放大示意圖。在圖8的實施例中,多條第一扇出走線FL1分別包括多個轉接結構TS2,多條擬直線A通過多個轉接結構TS2,每一條擬直線A通過相鄰的兩個轉接結構TS2,而多條擬直線A可連成擬折線Z。也就是說,在本實施例中,多個轉接結構TS2的排列方式可以是交錯式。FIG. 8 is an enlarged schematic diagram of a part R4 of a pixel array substrate according to another embodiment of the present invention. In the embodiment of FIG. 8, the plurality of first fan-out traces FL1 respectively include a plurality of switching structures TS2, a plurality of pseudo straight lines A pass through a plurality of switching structures TS2, and each pseudo straight line A passes through two adjacent transfer structures. Connect structure TS2, and multiple pseudo straight lines A can be connected to form pseudo broken lines Z. That is to say, in this embodiment, the arrangement of multiple switching structures TS2 may be staggered.
此外,在圖8的實施例中,多條第二扇出走線FL2的多個第二段146可分別具有多個彎曲部146a,且多個彎曲部146a可分別對應多條第一扇出走線FL1的多個轉接結構TS2設置。藉此,第一扇出走線FL1與第二扇出走線FL2能設置得更密集,進而減少畫素陣列基板之邊框的寬度(未繪示)。In addition, in the embodiment of FIG. 8, the plurality of
圖9為本發明又一實施例之畫素陣列基板的剖面示意圖。圖9係對應圖8的剖線Ⅳ-Ⅳ’。圖9之轉接結構TS2與圖5的轉接結構TS2略有不同。具體而言,在圖9的實施例中,第一絕緣層130之接觸窗132的邊緣132a與導電圖案143之邊緣的一部分143a及第二絕緣層150的接觸窗152之邊緣的一部分152a實質上切齊。也就是說,在圖9的實施例中,橋接圖案162是透過同一個接觸窗152電性連接至導電圖案123及導電圖案143。藉此,轉接結構TS2的面積可縮減,有助於減少畫素陣列基板之邊框的寬度(未繪示)。9 is a schematic cross-sectional view of a pixel array substrate according to another embodiment of the invention. Figure 9 corresponds to the section line IV-IV' of Figure 8. The switching structure TS2 in FIG. 9 is slightly different from the switching structure TS2 in FIG. 5. Specifically, in the embodiment of FIG. 9, the
圖9之具有同一接觸窗152之轉接結構TS2的設計可應用在前述任一實施例之轉接結構TS1、TS2及/或TS3上,本領域具有通常知識者根據前述的說明應能實現之,於此便不再逐一繪示及詳述之。The design of the switching structure TS2 with the
此外,在本實施例中,第一扇出走線FL1之第二段122之靠近驅動元件170(繪示於圖1)的一部分具有一線寬W1,第二扇出走線FL2之第二段146之遠離驅動元件170的一部分具有一線寬W2,而W2>W1。具有線寬W1之第一扇出走線FL1之第二段122的一部分與具有線寬W2之第二扇出走線FL2之第二段146的一部分分別位於第一扇出走線FL1之轉接結構TS2的兩側。In addition, in this embodiment, a part of the
使第一扇出走線FL1之第二段122之靠近驅動元件170(繪示於圖1)的一部分的線寬W1小,有助於能在靠近驅動元件170處設置數量更多的扇出走線FL1、FL2;使第二扇出走線FL2之第二段146之遠離驅動元件170的線寬W2大,有助於降低其阻抗,提升畫素陣列基板的電性。Make the line width W1 of the part of the
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make slight changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to those defined by the attached patent scope.
100:畫素陣列基板
110:基底
110X、170X:中心軸
121、123、125、142、143、146:導電圖案
122、146:第二段
124、141:第一段
130:第一絕緣層
131、132、133、151a、151b、152、152a、152b、153a、153b:接觸窗
132a:邊緣
143a、152a:部分
144:第三段
146a:彎曲部
150:第二絕緣層
161、162、163:橋接圖案
164:畫素電極
170:驅動元件
A:擬直線
D:汲極
d1、d2、d3:方向
FL1、FL2:扇出走線
G:閘極
K:距離
L1、L2、L3:長度
PX:畫素結構
R1~R4:局部
S:源極
S1、S2:間距
SL1、SL2:訊號線
T:主動元件
TS1、TS2、TS3:轉接結構
W:寬度
W1、W2:線寬
Z:擬折線
І-Ι’、П-П’、Ш-Ш’、Ⅳ-Ⅳ’:剖線
100: Pixel array substrate
110:
圖1為本發明一實施例之畫素陣列基板的上視示意圖。 圖2為本發明一實施例之畫素陣列基板的局部R1的放大示意圖。 圖3為本發明一實施例之畫素陣列基板的局部R2的放大示意圖。 圖4為本發明一實施例之畫素陣列基板的剖面示意圖。 圖5為本發明一實施例之畫素陣列基板的剖面示意圖。 圖6為本發明一實施例之畫素陣列基板的剖面示意圖。 圖7為本發明另一實施例之畫素陣列基板的局部R3的放大示意圖。 圖8為本發明又一實施例之畫素陣列基板的局部R4的放大示意圖。 圖9為本發明又一實施例之畫素陣列基板的剖面示意圖。 FIG. 1 is a schematic top view of a pixel array substrate according to an embodiment of the invention. 2 is an enlarged schematic diagram of a part R1 of a pixel array substrate according to an embodiment of the invention. 3 is an enlarged schematic diagram of a part R2 of a pixel array substrate according to an embodiment of the invention. 4 is a schematic cross-sectional view of a pixel array substrate according to an embodiment of the invention. 5 is a schematic cross-sectional view of a pixel array substrate according to an embodiment of the invention. 6 is a schematic cross-sectional view of a pixel array substrate according to an embodiment of the invention. FIG. 7 is an enlarged schematic diagram of a part R3 of a pixel array substrate according to another embodiment of the present invention. FIG. 8 is an enlarged schematic diagram of a part R4 of a pixel array substrate according to another embodiment of the present invention. 9 is a schematic cross-sectional view of a pixel array substrate according to another embodiment of the invention.
100:畫素陣列基板
110:基底
110X、170X:中心軸
122、146:第二段
124、141:第一段
144:第三段
164:畫素電極
170:驅動元件
D:汲極
d1、d2、d3:方向
FL1、FL2:扇出走線
G:閘極
K:距離
L1、L2、L3:長度
PX:畫素結構
R1、R2:局部
S:源極
S1、S2:間距
SL1、SL2:訊號線
T:主動元件
TS1、TS2、TS3:轉接結構
W:寬度
100: Pixel array substrate
110:
Claims (10)
Priority Applications (2)
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US16/525,621 US11049891B2 (en) | 2018-12-05 | 2019-07-30 | Pixel array substrate |
CN201910777815.3A CN110491885B (en) | 2018-12-05 | 2019-08-22 | Pixel array substrate |
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US201862775469P | 2018-12-05 | 2018-12-05 | |
US62/775,469 | 2018-12-05 |
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TW108103824A TWI690747B (en) | 2018-12-05 | 2019-01-31 | Pixel array substrate |
TW108113477A TWI709884B (en) | 2018-12-05 | 2019-04-17 | Touch display apparatus and controlling method thereof |
TW108113367A TWI699600B (en) | 2018-12-05 | 2019-04-17 | Display device |
TW108119193A TWI703390B (en) | 2018-12-05 | 2019-06-03 | Display device |
TW108121280A TWI704395B (en) | 2018-12-05 | 2019-06-19 | Display apparatus |
TW108122218A TWI699749B (en) | 2018-12-05 | 2019-06-25 | Display panel |
TW108126836A TWI699601B (en) | 2018-12-05 | 2019-07-29 | Pixel structure and manufacturing method thereof |
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TW108113367A TWI699600B (en) | 2018-12-05 | 2019-04-17 | Display device |
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TW108126836A TWI699601B (en) | 2018-12-05 | 2019-07-29 | Pixel structure and manufacturing method thereof |
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TW202022834A (en) | 2020-06-16 |
TW202022842A (en) | 2020-06-16 |
TWI709884B (en) | 2020-11-11 |
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TWI699749B (en) | 2020-07-21 |
TW202022582A (en) | 2020-06-16 |
TWI690747B (en) | 2020-04-11 |
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TW202022442A (en) | 2020-06-16 |
TWI704395B (en) | 2020-09-11 |
TW202022465A (en) | 2020-06-16 |
TWI699600B (en) | 2020-07-21 |
TW202022447A (en) | 2020-06-16 |
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TWI703390B (en) | 2020-09-01 |
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