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TWI683230B - Chip and power planning method - Google Patents

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TWI683230B
TWI683230B TW107127156A TW107127156A TWI683230B TW I683230 B TWI683230 B TW I683230B TW 107127156 A TW107127156 A TW 107127156A TW 107127156 A TW107127156 A TW 107127156A TW I683230 B TWI683230 B TW I683230B
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TW202008193A (en
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林家民
許志勝
黃柏元
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財團法人成大研究發展基金會
奇景光電股份有限公司
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Abstract

A chip includes a substrate; macros placed on the substrate, which has a placement region being divided into sub-regions according to locations of the macros; and one or more vertical power stripes (VPSs) disposed in each sub-region. At least one VPS is not aligned with the VPSs of an adjacent higher or lower sub-region.

Description

晶片與電源規劃方法Chip and power planning method

本發明係有關一種電源規劃,特別是關於一種可繞度為導向(routability-driven)巨集認知(macro-aware)的電源規劃方法及晶片。The present invention relates to a power supply planning, and in particular to a power-out planning method and chip for macro-aware that can be based on routability-driven.

電源規劃為積體電路於實體設計當中的一個重要步驟。由於元件的縮小,晶片的單元區域可容納更多的電子元件,使得晶片的功率密度大幅的增加。當代晶片的設計效能逐漸提升,造成晶片消耗大量的動態功率,使得壓降(voltage drop)成為一個嚴重的問題。當使用較低的供應電壓以降低積體電路的動態功率時,由於可容忍壓降值跟著縮減,使得壓降問題變得更為嚴重。Power planning is an important step in the design of integrated circuits. Due to the shrinking of components, the unit area of the wafer can accommodate more electronic components, which greatly increases the power density of the wafer. The design efficiency of contemporary chips has gradually improved, causing the chips to consume a lot of dynamic power, making voltage drop a serious problem. When a lower supply voltage is used to reduce the dynamic power of the integrated circuit, the voltage drop problem becomes more serious due to the tolerable voltage drop value.

為了提供穩定與更強電源給元件,功率一般是藉由全域(global)電源網路(power mesh)來傳送給巨集(macro)或標準元件(standard cell)。電源網路包含電源環、水平電源線及垂直電源線,通常是設於頂部的二金屬層內。例如,上金屬層的金屬寬度較其他層來得寬,一般用以設置水平電源線。垂直電源線則設置於下一金屬層,必須和信號網路(signal nets)共用繞線資源,因此電源網路的設計必須在壓降與繞線面積(或擁塞)之間取得平衡。In order to provide stable and stronger power to components, power is generally transmitted to a macro or standard cell through a global power mesh. The power network includes a power ring, a horizontal power line, and a vertical power line, and is usually located in the top two metal layers. For example, the metal width of the upper metal layer is wider than other layers, and is generally used to set horizontal power lines. The vertical power line is placed on the next metal layer and must share the winding resources with signal nets. Therefore, the design of the power network must balance the voltage drop with the winding area (or congestion).

由於製造技術的不斷進步,當代的系統單晶片可包含好幾百個智慧財產(IP)巨集,例如內嵌記憶體。所有的巨集必須連接至電源/接地網路,電源規劃變得更為複雜。當系統單晶片的巨集數目不斷增加,依賴有經驗設計者來手動執行電源規劃變得沒有效率。Due to continuous advances in manufacturing technology, contemporary system-on-a-chips can contain hundreds of intellectual property (IP) macros, such as embedded memory. All macros must be connected to a power/ground network, and power planning becomes more complicated. As the number of system-on-a-chip macros continues to increase, relying on experienced designers to manually perform power planning becomes inefficient.

因此亟需提出一種新穎的電源規劃機制,以增加繞線資源的整體效率。Therefore, there is an urgent need to propose a novel power planning mechanism to increase the overall efficiency of the winding resources.

鑑於上述,本發明實施例的目的之一在於提出一種可繞度為導向(routability-driven)巨集認知(macro-aware)的電源規劃方法及晶片,可大量增進可繞度並根據巨集的位置以促進巨集的連接;提出一種有效電源繞線寬度,以增進整體繞線資源的有效利用;且提供更精確成本函數,根據動態規劃演算法以決定電源線的位置。In view of the above, one of the objectives of the embodiments of the present invention is to propose a power-routing-driven macro-aware power planning method and chip, which can greatly improve the windability and according to the macro Position to promote the connection of the macro; propose an effective power winding width to improve the effective use of the overall winding resources; and provide a more accurate cost function, according to the dynamic programming algorithm to determine the position of the power line.

根據本發明實施例之一,晶片包含基板、複數巨集及一或複數垂直電源線。巨集設於基板上,其具有設置區域,根據巨集的位置將設置區域劃分為複數子區域。垂直電源線設於每一子區域。至少一垂直電源線與相鄰上面或下面子區域的垂直電源線不互相對齊。According to one embodiment of the present invention, the chip includes a substrate, a plurality of macros, and one or a plurality of vertical power lines. The macro is set on the substrate, and has a setting area, and the setting area is divided into a plurality of sub-areas according to the position of the macro. Vertical power lines are provided in each sub-region. At least one vertical power line is not aligned with the vertical power lines of the adjacent upper or lower sub-regions.

根據本發明另一實施例,電源規劃方法包含以下步驟。(a)提供一晶片,其上設有複數巨集。(b)根據巨集的位置,將晶片的設置區域劃分為複數子區域。(c)對於每一子區域,決定垂直電源線的總電源繞線寬度。(d)對於每一子區域,將總電源繞線寬度除以有效電源線寬度,以得到垂直電源線的數目。(e)對於每一子區域,決定垂直電源線的位置。According to another embodiment of the present invention, a power planning method includes the following steps. (a) Provide a chip on which a plurality of macros are provided. (b) According to the position of the macro, the installation area of the wafer is divided into a plurality of sub-areas. (c) For each sub-region, determine the total power supply winding width of the vertical power supply line. (d) For each sub-region, divide the total power supply winding width by the effective power supply line width to obtain the number of vertical power supply lines. (e) For each sub-region, determine the position of the vertical power line.

第一圖顯示本發明實施例的可繞度為導向(routability-driven)巨集認知(macro-aware)的電源規劃(power planning)方法(以下簡稱電源規劃方法)110的流程圖。The first figure shows a flowchart of a power planning method for macro-aware (hereinafter referred to as a power planning method) 110 that can be macro-aware according to an embodiment of the present invention.

於步驟11,根據巨集的位置,將晶片(chip)的設置區域(placement region)劃分為複數子區域(sub-region, SR)。在本說明書中,晶片(或微晶片)係指積體電路,其包含電子電路,例如智慧財產核(IP core)或巨集,設置於半導體(例如矽)基板上。第二A圖顯示晶片200的俯視示意圖,(斜線區域的)巨集21預設於設置區域22。In step 11, according to the position of the macro, the placement region of the chip is divided into a plurality of sub-regions (SR). In this specification, a chip (or microchip) refers to an integrated circuit, which contains an electronic circuit, such as an IP core or a macro, and is disposed on a semiconductor (eg, silicon) substrate. FIG. 2A shows a schematic top view of the wafer 200. The macro 21 (in the oblique area) is preset in the setting area 22.

如第二A圖所示,對於每一巨集21,將靠近(但不需重疊)巨集21上緣的水平電源線(horizontal power stripe, HPS)予以延伸直到碰到另一巨集21或設置區域22的邊界,因而得到第一水平線。類似的情形,將靠近(但不需重疊)巨集21下緣的水平電源線(HPS)予以延伸直到碰到另一巨集21或設置區域22的邊界,因而得到第二水平線。As shown in Figure 2A, for each macro 21, a horizontal power strip (HPS) near (but not overlapping) the upper edge of the macro 21 is extended until it encounters another macro 21 or The boundary of the area 22 is set, and thus the first horizontal line is obtained. In a similar situation, the horizontal power line (HPS) close to (but not overlapping with) the lower edge of the macro 21 is extended until it meets the boundary of another macro 21 or the setting area 22, thereby obtaining a second horizontal line.

如第二B圖所示,將巨集21左緣予以延伸直到碰到另一巨集21或設置區域22的邊界,因而得到第一垂直線。類似的情形,將巨集21右緣予以延伸直到碰到另一巨集21或設置區域22的邊界,因而得到第二垂直線。藉此,第一水平線、第二水平線、第一垂直線與第二垂直線將晶片200的設置區域22劃分為複數子區域SR。如第二B圖所例示,實線表示(且定義)這些子區域SR的邊緣。因此,任何預設巨集21,無論其為何種引腳(pin)型態,皆可被水平電源線(HPS)與下述的垂直電源線(vertical power stripe, VPS)圍繞。此外,根據本實施例,每一子區域SR可獨立執行其電源劃分,因而可大量增加電源劃分的彈性。在本實施例中,水平電源線(HPS)設於第一上金屬層,且垂直電源線(VPS)設於第二上金屬層,其位於水平電源線底下且互相電性絕緣。As shown in the second image B, the left edge of the macro 21 is extended until it meets the boundary of another macro 21 or the setting area 22, thus obtaining the first vertical line. In a similar situation, the right edge of the macro 21 is extended until it meets the boundary of another macro 21 or the setting area 22, thereby obtaining a second vertical line. Thereby, the first horizontal line, the second horizontal line, the first vertical line, and the second vertical line divide the installation area 22 of the wafer 200 into a plurality of sub-regions SR. As illustrated in the second B diagram, the solid lines represent (and define) the edges of these sub-regions SR. Therefore, any preset macro 21, regardless of its pin type, can be surrounded by a horizontal power line (HPS) and a vertical power strip (VPS) described below. In addition, according to the present embodiment, each sub-region SR can independently perform its power division, and thus the flexibility of power division can be greatly increased. In this embodiment, the horizontal power line (HPS) is provided on the first upper metal layer, and the vertical power line (VPS) is provided on the second upper metal layer, which is located under the horizontal power line and electrically insulated from each other.

接著,於步驟12,至少一子區域SR與相鄰子區域SR合併(merge)。第二C圖顯示第二A圖的晶片200的俯視示意圖,其中實線表示合併後的子區域SR的邊緣,而虛線則表示合併前的子區域SR的邊緣。藉此,一些具小面積(例如小於預設值)的子區域合併至相鄰子區域SR,以形成較大子區域SR。Next, in step 12, at least one sub-region SR is merged with the adjacent sub-region SR. The second diagram C shows a schematic top view of the wafer 200 of the second diagram A, wherein the solid line represents the edge of the merged sub-region SR, and the dotted line represents the edge of the merged sub-region SR. In this way, some sub-regions with a small area (for example, less than a preset value) are merged into adjacent sub-regions SR to form a larger sub-region SR.

在一實施例中,先執行垂直合併,再執行水平合併。其中,每一子區域SR依序進行查對。如果子區域SR涵蓋的水平電源線少於預設值(例如二條),則將子區域SR合併至下面(lower)子區域SR(假設該下面子區域SR存在且這二個子區域SR具相同寬度)。否則,將子區域SR合併至上面(higher)子區域SR(假設該上面子區域SR存在且這二個子區域SR具相同寬度)。類似的情形,如果子區域SR涵蓋的垂直電源線少於預設值(例如五條),則將子區域SR合併至左側子區域SR(假設該左側子區域SR存在且這二個子區域SR具相同高度)。否則,將子區域SR合併至右側子區域SR(假設該右側子區域SR存在且這二個子區域SR具相同高度)。In one embodiment, vertical merge is performed first, followed by horizontal merge. Among them, each sub-region SR is checked in sequence. If the horizontal power line covered by the sub-region SR is less than a preset value (for example, two), the sub-region SR is merged into the lower sub-region SR (assuming that the sub-region SR exists and the two sub-regions SR have the same width ). Otherwise, the sub-region SR is merged into the higher sub-region SR (assuming that the upper sub-region SR exists and the two sub-regions SR have the same width). In a similar situation, if the vertical power lines covered by the sub-region SR are less than a preset value (for example, five), the sub-region SR is merged into the left sub-region SR (assuming that the left sub-region SR exists and the two sub-regions SR have the same height). Otherwise, the sub-region SR is merged into the right sub-region SR (assuming that the right sub-region SR exists and the two sub-regions SR have the same height).

於步驟13,對於每一子區域SR,決定垂直電源線的總電源繞線寬度(total power routing width, TPRW),使得最小繞線區域可符合壓降與電子遷移(electromigration)條件。第二D圖顯示第二A圖的晶片200的俯視示意圖,其中點區域分別表示每一子區域SR的垂直電源線的總電源繞線寬度TPRW。在本實施例中,使用譚(X.-D. Tan)等人所提出的最佳化估算(optimization sizing)演算法以決定垂直電源線的總電源繞線寬度TPRW。在本實施例中,水平電源線的寬度為固定,且水平電源線平均等距設置。最佳化估算演算法的細節可參考譚(X.-D. Tan)等人所提出的“藉由依序線性規劃的超大型積體電路的電源/接地的可靠度區域最佳化 (Reliability-Constrained Area Optimization of VLSI Power/Ground Networks Via Sequence of Linear Programmings)”,刊於設計自動化會刊(Proceedings of DAC),第78~83頁,2003年,其內容視為本說明書的一部份。In step 13, for each sub-region SR, the total power routing width (TPRW) of the vertical power line is determined, so that the minimum winding area can meet the voltage drop and electromigration conditions. The second diagram D shows a schematic top view of the wafer 200 of the second diagram A, wherein the dotted areas respectively represent the total power supply winding width TPRW of the vertical power supply lines of each sub-region SR. In this embodiment, the optimization sizing algorithm proposed by X.-D. Tan et al. is used to determine the total power supply winding width TPRW of the vertical power supply line. In this embodiment, the width of the horizontal power supply line is fixed, and the horizontal power supply lines are evenly spaced. For the details of the optimization estimation algorithm, please refer to "Reliability-Optimization of Power/Ground Reliability of Very Large Integrated Circuits by Sequential Linear Programming" proposed by X.-D. Tan et al. Constrained Area Optimization of VLSI Power/Ground Networks Via Sequence of Linear Programmings", published in Proceedings of DAC, pages 78~83, 2003, and its contents are considered as part of this manual.

接著,於步驟14,決定每一子區域SR的垂直電源線的數目。在本實施例中,首先決定有效電源線寬度(effective stripe width, ESW)。接著,將(步驟13的)總電源繞線寬度TPRW除以有效電源線寬度(ESW),即可得到子區域SR當中的垂直電源線的數目。Next, in step 14, the number of vertical power lines of each sub-region SR is determined. In this embodiment, the effective stripe width (ESW) is first determined. Next, the total power winding width TPRW (of step 13) is divided by the effective power line width (ESW) to obtain the number of vertical power lines in the sub-region SR.

根據張(W.-H. Chang)等人所提出的“使用鋁墊層的多層電源網路的實用可繞度為導向的設計流程(Practical Routability-Driven Design Flow for Multilayer Power Networks Using Aluminum-Pad Layer)”,刊於電機電子工程師學會超大型積體電路會刊(IEEE TVLSI),第22冊,第5號,第1069~1081頁,2013年6月,其內容視為本說明書的一部份,非冗餘(irredundant)電源線寬度w p可表示為T的函數:

Figure 02_image001
(1) 其中T代表電源線所包含的軌道(track)數目,p為間距寬度,Δ(w)為二線之間的最小間隔,且W min為最小金屬寬度。 According to "W.-H. Chang" et al. "Practical Routability-Driven Design Flow for Multilayer Power Networks Using Aluminum-Pad"Layer)", published in the IEEE Journal of Very Large Integrated Circuits (IEEE TVLSI), Volume 22, No. 5, pages 1069~1081, June 2013, the content of which is regarded as a part of this manual The width of non-redundant (irredundant) power line w p can be expressed as a function of T:
Figure 02_image001
(1) where T represents the number of tracks included in the power line, p is the pitch width, Δ(w) is the minimum interval between the two lines, and W min is the minimum metal width.

若w v代表接觸窗(via contact)的寬度,Δ v2v代表二接觸窗之間的最短距離,Δ v2b代表接觸窗與覆蓋區域的邊界的最短距離。對於大小為rxs的接觸窗陣列A rxs,覆蓋區域的寬度可表示為:

Figure 02_image003
(2) If w v represents the width of the contact window (via contact), Δ v2v represents the shortest distance between the two contact windows, and Δ v2b represents the shortest distance between the contact window and the boundary of the coverage area. For the contact window array A rxs of size rxs , the width of the coverage area can be expressed as:
Figure 02_image003
(2)

第三圖例示接觸窗陣列佔用的軌道的示意圖,該接觸窗陣列係用以連接電源網路(mesh)的不同層的金屬。A rxs佔用的繞線軌道的數目T(A rxs)可表示如下:

Figure 02_image005
(3) 其中
Figure 02_image007
表示頂函數(ceiling function),其輸出值為大於或等於輸入值的最小整數。 The third figure illustrates a schematic diagram of the track occupied by the contact window array, which is used to connect different layers of metal of the power grid (mesh). A rxs occupied by the winding number of the track T (A rxs) can be expressed as follows:
Figure 02_image005
(3) where
Figure 02_image007
Represents a ceiling function, whose output value is the smallest integer greater than or equal to the input value.

將式(3)帶入式(1),可得到有效電源線寬度(ESW)w e如下:

Figure 02_image009
(4) The formula (3) into the formula (1), to obtain the effective power line width (ESW) w e as follows:
Figure 02_image009
(4)

如前所述,將(步驟13的)總電源繞線寬度TPRW除以(式(4)的)有效電源線寬度(ESW),即可得到子區域SR當中的垂直電源線的數目。As described above, dividing the total power supply winding width TPRW (of step 13) by the effective power supply line width (ESW) (of equation (4)), the number of vertical power supply lines in the sub-region SR can be obtained.

最後,於步驟15,決定每一子區域SR的垂直電源線VPS的位置。第二E圖顯示第二A圖的晶片200的俯視示意圖,其中交叉斜線區域表示每一子區域SR的垂直電源線VPS。在本實施例中,使用前述張等人所提出的動態規劃演算法以決定每一子區域SR的垂直電源線VPS的位置。不同於張等人所提演算法係應用於整個晶片,本實施例則是應用演算法於每一子區域SR,因此使得本實施例的電源線設置較張的應用更為彈性。根據本實施例的特徵之一,垂直電源線VPS並非均勻地設置(雖然具有相同的有效電源線寬度),因此一般來說,於子區域SR內,相鄰垂直電源線VPS的間距各不一定相同。因此,本實施例的子區域(或合併的子區域)稱為不規則區域,然而位於巨集21的區域則稱為規則區域。此外,由於各子區域SR係個別決定垂直電源線VPS的設置,因此根據本實施例的另一特徵,至少一垂直電源線VPS與上面或下面子區域SR的垂直電源線VPS不互相對齊。換句話說,至少一垂直電源線VPS於垂直方向的相鄰子區域SR的邊界處為不連續。Finally, in step 15, the position of the vertical power line VPS of each sub-region SR is determined. The second diagram E shows a schematic top view of the wafer 200 of the second diagram A, wherein the cross-hatched area represents the vertical power line VPS of each sub-region SR. In this embodiment, the dynamic programming algorithm proposed by Zhang et al. is used to determine the position of the vertical power line VPS of each sub-region SR. Unlike the algorithm proposed by Zhang et al., which is applied to the entire chip, this embodiment applies the algorithm to each sub-region SR, thus making the power line setting of this embodiment more flexible than Zhang's application. According to one of the features of this embodiment, the vertical power supply lines VPS are not uniformly arranged (although they have the same effective power supply line width), so in general, in the sub-region SR, the distance between adjacent vertical power supply lines VPS is not necessarily the same. Therefore, the sub-regions (or merged sub-regions) of this embodiment are called irregular regions, while the regions located in the macro 21 are called regular regions. In addition, since each sub-region SR individually determines the arrangement of the vertical power lines VPS, according to another feature of this embodiment, at least one vertical power line VPS and the vertical power lines VPS of the upper or lower sub-region SR are not aligned with each other. In other words, at least one vertical power line VPS is discontinuous at the boundary of the adjacent sub-region SR in the vertical direction.

第四A圖顯示子區域SR的繞線區域,劃分為n磚(tile),其中t j代表第j行的磚,每一磚包含m格(grid),其中g i,j代表t j的第i格。e i,j代表格g i,j的水平頂邊。C i,j代表邊e i,j的擁塞(congestion)值,其中C=d i,j/c i,j,c i,j與d i,j分別代表邊e i,j的繞線容量(routing capacity)與繞線要求(routing demand)(其相關於通過e i,j的網路數目)。若δ j代表於磚t j設置垂直電源線的懲罰值(penalty)或擁塞成本,可表示如下:

Figure 02_image011
其中
Figure 02_image013
Figure 02_image015
其中
Figure 02_image017
代表C i,j的平均值,σ代表標準差。 The fourth diagram A shows the winding area of the sub-region SR, divided into n tiles, where t j represents the brick in the jth row, each brick contains m grids, and g i,j represents t j Grid i. e i,j represents the horizontal top edge of the grid g i,j . C i,j represents the congestion value of the edge e i,j , where C=d i,j /c i,j , c i,j and d i,j represent the winding capacity of the edge e i,j respectively (routing capacity) and routing demand (which is related to the number of networks passing through e i,j ). If δ j represents the penalty or congestion cost of setting vertical power lines in brick t j , it can be expressed as follows:
Figure 02_image011
among them
Figure 02_image013
And
Figure 02_image015
among them
Figure 02_image017
Represents the average value of C i,j , and σ represents the standard deviation.

第四B圖例示每一子區域SR 1與SR 2的擁塞懲罰值δ j,據以設置垂直電源線VPS於子區域SR 1與SR 2。例如,對於子區域SR 1,δ 1= (1/3)(100x(1/5)+(2/5)+(3/5))=7,δ 2= (1/3)((2/5)+(2/5)+(2/5))=0.4。對於子區域SR 2,δ 2= (1/2)(100x(2/3)+(1/3))=33.5。 The fourth diagram B illustrates the congestion penalty value δ j of each sub-region SR 1 and SR 2 , according to which the vertical power line VPS is set in the sub-regions SR 1 and SR 2 . For example, for the subregion SR 1 , δ 1 = (1/3)(100x(1/5)+(2/5)+(3/5))=7, δ 2 = (1/3)((2 /5)+(2/5)+(2/5))=0.4. For the sub-region SR 2 , δ 2 = (1/2)(100x(2/3)+(1/3))=33.5.

根據上述實施例,本實施例提出一種基於列的電源網路(row-based power mesh),根據巨集21的位置將晶片200劃分為多個子區域SR。本實施例不但可促進巨集21的電源/接地連接,且因為垂直電源線的設置具有較大彈性,因而可增進可繞性。由於傳統電源網路的垂直電源線延伸於整個晶片,因而浪費了許多繞線資源於連接這些巨集。第五A圖顯示傳統設計的俯視示意圖,其多個巨集41具有不同的引腳(pin)42型態。在這個例子中,至少需七個垂直電源線以連接電源網路。第五B圖與第五C圖顯示本發明實施例的俯視示意圖。由於水平電源線(HPS)已分佈於上層,本實施例可根據預設巨集41的位置以劃分晶片為多列,如第五B圖所示。接著,每一子區域的垂直電源線VPS的位置可獨立規劃。因此,本實施例可使用較少的垂直電源線VPS以完成電源網路,如第五C圖所示。此外,由於每一子區域的電源線可獨立調整,因而相較於傳統使用較長(垂直)電源線,本實施例可以輕易地避開繞線擁塞區域。According to the above embodiment, this embodiment proposes a row-based power mesh, which divides the chip 200 into a plurality of sub-regions SR according to the position of the macro 21. This embodiment can not only promote the power/ground connection of the macro 21, but also because the arrangement of the vertical power line has greater flexibility, so that the windability can be improved. Since the vertical power line of the traditional power network extends across the entire chip, a lot of winding resources are wasted in connecting these macros. FIG. 5A shows a schematic top view of a conventional design, in which multiple macros 41 have different pin 42 types. In this example, at least seven vertical power cables are required to connect to the power network. Figures 5B and 5C show schematic top views of embodiments of the present invention. Since the horizontal power line (HPS) has been distributed on the upper layer, in this embodiment, the wafer can be divided into multiple columns according to the position of the preset macro 41, as shown in the fifth B diagram. Then, the position of the vertical power line VPS of each sub-region can be independently planned. Therefore, in this embodiment, fewer vertical power lines VPS may be used to complete the power network, as shown in FIG. 5C. In addition, since the power lines of each sub-region can be adjusted independently, compared with the traditional use of longer (vertical) power lines, this embodiment can easily avoid the congestion region of the winding.

根據上述,本實施例也提出一種方法以有效決定適當的繞線寬度。上述張等人所提出的非冗餘(irredundant)電源線寬度,根據繞線所佔用繞線軌道的數目,以決定電源線寬度。本實施例將此概念予以延伸,考量接觸窗陣列以決定電源線寬度。接觸窗陣列通常設於水平電源線與電源線之間的覆蓋區域,用以將降低阻抗並增進電源網路的可靠度。接觸窗陣列的大小有很多的選擇,較大的陣列產生較低阻抗。由於電源線寬度受制於接觸窗陣列,因此當本實施例決定電源線的寬度時,必須考量接觸窗陣列的大小。Based on the above, this embodiment also proposes a method to effectively determine an appropriate winding width. The width of the non-redundant power line proposed by Zhang et al. is determined according to the number of winding tracks occupied by the winding. This embodiment extends this concept, considering the contact window array to determine the power line width. The contact window array is usually located in the coverage area between the horizontal power line and the power line to reduce the impedance and improve the reliability of the power network. There are many options for the size of the contact window array, and larger arrays produce lower impedance. Since the width of the power line is restricted by the contact window array, when determining the width of the power line in this embodiment, the size of the contact window array must be considered.

值得注意的是,本實施例係於設置(placement)階段完成後才開始進行電源規劃的。根據功率消耗與繞線擁塞的資訊,因而得以設計較佳的電源/接地電源網路。本實施例提出精確成本函數,當設置電源線於某個位置時,可決定相關懲罰值(或擁塞成本)。根據基於列的電源網路與較佳成本函數,本實施例於設置電源線時可輕易地避開繞線擁塞區域。It is worth noting that this embodiment starts power planning only after the placement phase is completed. According to the information of power consumption and winding congestion, a better power/ground power network can be designed. This embodiment proposes an accurate cost function. When setting the power line at a certain location, the relevant penalty value (or congestion cost) can be determined. According to the column-based power supply network and the better cost function, this embodiment can easily avoid the congested area of the winding when setting the power supply line.

以上所述僅為本發明之較佳實施例而已,並非用以限定本發明之申請專利範圍;凡其它未脫離發明所揭示之精神下所完成之等效改變或修飾,均應包含在下述之申請專利範圍內。The above are only the preferred embodiments of the present invention and are not intended to limit the scope of the patent application of the present invention; all other equivalent changes or modifications made without departing from the spirit of the invention should be included in the following Within the scope of patent application.

110‧‧‧電源規劃方法110‧‧‧Power planning method

11‧‧‧根據巨集的位置將設置區域劃分為子區域11‧‧‧ Divide the setting area into sub-areas according to the position of the macro

12‧‧‧合併子區域12‧‧‧ merged sub-regions

13‧‧‧決定每一子區域的垂直電源線的總電源繞線寬度13‧‧‧ Determine the total power winding width of the vertical power line in each sub-region

14‧‧‧決定每一子區域的垂直電源線的數目14‧‧‧decide the number of vertical power lines in each sub-region

15‧‧‧決定每一子區域的垂直電源線的位置15‧‧‧ Determine the position of the vertical power cord in each sub-region

200‧‧‧晶片200‧‧‧chip

21‧‧‧巨集21‧‧‧ Macro

22‧‧‧設置區域22‧‧‧Set area

41‧‧‧巨集41‧‧‧Macro

42‧‧‧引腳42‧‧‧pin

SR‧‧‧子區域SR‧‧‧Subregion

TPRW‧‧‧總電源繞線寬度TPRW‧‧‧Total power supply winding width

VPS‧‧‧垂直電源線VPS‧‧‧Vertical power cord

HPS‧‧‧水平電源線HPS‧‧‧Horizontal power cord

Wv‧‧‧接觸窗的寬度W v ‧‧‧ Width of contact window

Δv2v‧‧‧接觸窗之間的最短距離Δ v2v ‧‧‧The shortest distance between contact windows

Δv2b‧‧‧接觸窗與覆蓋區域的邊界的最短距離Δ v2b ‧‧‧The shortest distance between the contact window and the boundary of the coverage area

WArxs‧‧‧覆蓋區域的寬度W Arxs ‧‧‧ width of coverage area

We‧‧‧有效電源線寬度W e ‧‧‧ effective power line width

t‧‧‧磚t‧‧‧brick

g‧‧‧格g‧‧‧ grid

e‧‧‧邊e‧‧‧ side

δ‧‧‧懲罰值δ‧‧‧ Penalty

第一圖顯示本發明實施例之可繞度為導向巨集認知的電源規劃方法的流程圖。 第二A圖至第二E圖顯示預設有巨集的晶片的俯視示意圖。 第三圖例示接觸窗陣列佔用的軌道的示意圖。 第四A圖顯示子區域的繞線區域。 第四B圖例示每一子區域的擁塞懲罰值。 第五A圖顯示傳統設計的俯視示意圖,其多個巨集具有不同的引腳型態。 第五B圖與第五C圖顯示本發明實施例的俯視示意圖。The first figure shows a flowchart of a power planning method that can be oriented to macro-cognition according to an embodiment of the present invention. Figures 2A to 2E show schematic top views of wafers with preset macros. The third figure illustrates a schematic diagram of the track occupied by the contact window array. The fourth image A shows the winding area of the sub-area. The fourth figure B illustrates the congestion penalty value of each sub-region. Figure 5A shows a schematic top view of a conventional design, with multiple macros having different pin types. Figures 5B and 5C show schematic top views of embodiments of the present invention.

110‧‧‧電源規劃方法 110‧‧‧Power planning method

11‧‧‧根據巨集的位置將設置區域劃分為子區域 11‧‧‧ Divide the setting area into sub-areas according to the position of the macro

12‧‧‧合併子區域 12‧‧‧ merged sub-regions

13‧‧‧決定每一子區域的垂直電源線的總電源繞線寬度 13‧‧‧ Determine the total power winding width of the vertical power line in each sub-region

14‧‧‧決定每一子區域的垂直電源線的數目 14‧‧‧decide the number of vertical power lines in each sub-region

15‧‧‧決定每一子區域的垂直電源線的位置 15‧‧‧ Determine the position of the vertical power cord in each sub-region

Claims (9)

一種晶片,包含:一基板;複數巨集,設於該基板上,其具有一設置區域,根據該複數巨集的位置將該設置區域劃分為複數子區域;一或複數垂直電源線,設於每一該子區域;及複數水平電源線,設於第一上金屬層,該複數垂直電源線設於第二上金屬層,其位於該複數水平電源線底下;其中至少一垂直電源線與相鄰上面或下面子區域的垂直電源線不互相對齊。 A chip, comprising: a substrate; a plurality of macros, set on the substrate, having a setting area, the setting area is divided into a plurality of sub-regions according to the position of the plurality of macros; one or a plurality of vertical power lines are provided on Each of the sub-regions; and a plurality of horizontal power lines are provided on the first upper metal layer, the plurality of vertical power lines are provided on the second upper metal layer, which are located under the plurality of horizontal power lines; at least one of the vertical power lines and the phase The vertical power lines adjacent to the upper or lower subarea are not aligned with each other. 根據申請專利範圍第1項所述的晶片,其中該複數垂直電源線非均勻地設置,因此於該子區域內,相鄰的垂直電源線的間距不一定相同。 The wafer according to item 1 of the scope of the patent application, in which the plurality of vertical power lines are arranged non-uniformly, therefore, the pitch of adjacent vertical power lines in the sub-region is not necessarily the same. 根據申請專利範圍第1項所述的晶片,其中該複數水平電源線平均等距設置。 The wafer according to item 1 of the scope of the patent application, wherein the plurality of horizontal power lines are evenly spaced. 根據申請專利範圍第1項所述的晶片,其中至少二子區域具有不同數目的垂直電源線。 The wafer according to item 1 of the patent application scope, wherein at least two sub-regions have different numbers of vertical power lines. 根據申請專利範圍第1項所述的晶片,其中至少二子區域具有不同的總電源繞線寬度。 The wafer according to item 1 of the patent application scope, wherein at least two sub-regions have different total power supply winding widths. 一種電源規劃方法,包含:(a)提供一晶片,其上設有複數巨集;(b)根據該複數巨集的位置,將該晶片的設置區域劃分為複數子區域;(c)對於每一子區域,決定垂直電源線的總電源繞線寬度; (d)對於每一子區域,將該總電源繞線寬度除以有效電源線寬度,以得到該垂直電源線的數目;及(e)對於每一子區域,決定該垂直電源線的位置;其中該步驟(b)包含:對於每一巨集,將靠近該巨集上緣的水平電源線予以延伸直到碰到另一巨集或該設置區域的邊界,因而得到第一水平線;對於每一巨集,將靠近該巨集下緣的水平電源線予以延伸直到碰到另一巨集或該設置區域的邊界,因而得到第二水平線;對於每一巨集,將該巨集左緣予以延伸直到碰到另一巨集或該設置區域的邊界,因而得到第一垂直線;對於每一巨集,將該巨集右緣予以延伸直到碰到另一巨集或該設置區域的邊界,因而得到第二垂直線;其中該複數巨集的該第一水平線、該第二水平線、該第一垂直線與該第二垂直線將該設置區域劃分為該複數子區域。 A power supply planning method includes: (a) providing a chip on which a plurality of macros are provided; (b) dividing the installation area of the chip into a plurality of sub-regions according to the position of the plurality of macros; (c) for each A sub-area determines the total power winding width of the vertical power line; (d) For each subregion, divide the total power supply winding width by the effective power supply line width to obtain the number of the vertical power supply lines; and (e) For each subregion, determine the position of the vertical power supply line; The step (b) includes: for each macro, extend the horizontal power line near the upper edge of the macro until it touches another macro or the boundary of the setting area, thus obtaining the first horizontal line; for each Macro, extend the horizontal power line near the lower edge of the macro until it meets another macro or the boundary of the setting area, thus obtaining a second horizontal line; for each macro, extend the left edge of the macro Until it meets another macro or the boundary of the setting area, and thus the first vertical line is obtained; for each macro, the right edge of the macro is extended until it meets the boundary of another macro or the setting area, thus A second vertical line is obtained; wherein the first horizontal line, the second horizontal line, the first vertical line, and the second vertical line of the complex macro divide the setting area into the complex sub-areas. 根據申請專利範圍第6項所述的電源規劃方法,其中如果該子區域涵蓋的垂直電源線少於預設值,則將該子區域合併至左側子區域,假設該左側子區域存在且這二個子區域具相同高度;否則,將該子區域合併至右側子區域,假設該右側子區域存在且這二個子區域具相同高度。 The power planning method according to item 6 of the patent application scope, wherein if the vertical power line covered by the sub-region is less than the preset value, the sub-region is merged into the left sub-region, assuming that the left sub-region exists and these two The sub-regions have the same height; otherwise, the sub-region is merged into the right sub-region, assuming that the right sub-region exists and the two sub-regions have the same height. 根據申請專利範圍第6項所述的電源規劃方法,其中該垂直電源線非均勻地設置,因此相鄰的垂直電源線的間距不一定相同。 According to the power supply planning method described in Item 6 of the patent application range, in which the vertical power supply lines are arranged non-uniformly, the intervals between adjacent vertical power supply lines are not necessarily the same. 根據申請專利範圍第6項所述的電源規劃方法,其中至少一垂直電源線與相鄰上面或下面子區域的垂直電源線不互相對齊。According to the power planning method described in Item 6 of the patent application scope, at least one vertical power line is not aligned with the vertical power lines of the adjacent upper or lower sub-regions.
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