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CN100578776C - Integrated circuit chip and its power line structure - Google Patents

Integrated circuit chip and its power line structure Download PDF

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CN100578776C
CN100578776C CN200710091176A CN200710091176A CN100578776C CN 100578776 C CN100578776 C CN 100578776C CN 200710091176 A CN200710091176 A CN 200710091176A CN 200710091176 A CN200710091176 A CN 200710091176A CN 100578776 C CN100578776 C CN 100578776C
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power supply
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CN101286493A (en
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陈建良
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Ali Corp
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Abstract

The invention relates to a power line structure which is manufactured on an integrated circuit chip, wherein the integrated circuit chip is provided with a main metal layer and a first metal layer. The power line structure comprises at least one power pattern, a plurality of first power strips and a plurality of first power main channels. The power pattern is formed on an edge of the main metal layer, the first power strips are formed on the first metal layer in parallel to each other, and the first power trunk is formed on the main metal layer in parallel to each other. The first power trunk is used for respectively connecting the first power strip to the power pattern, wherein the ratio of the trunk length to the width of each of the plurality of first power trunks is equal.

Description

集成电路芯片及其电源线结构 Integrated circuit chip and its power line structure

技术领域 technical field

本发明涉及集成电路芯片领域,特别是一种集成电路芯片以及该芯片的电源线结构。The invention relates to the field of integrated circuit chips, in particular to an integrated circuit chip and a power line structure of the chip.

背景技术 Background technique

随着各类消费性电子产品日趋功能多样化与整合化的趋势,集成电路芯片必须整合更多的晶体管等组件以实现更多预期的功能。然而,这样做却相对地提高了集成电路芯片的动态功率消耗,从而会造成电压值的不均匀分布。这种电压值分布不均匀的现象将会使得集成电路芯片内组件的电压产生差异,在进行实际工作时,有可能会出现不符合设计者预想的结果。With the increasing trend of functional diversification and integration of various consumer electronic products, integrated circuit chips must integrate more components such as transistors to achieve more expected functions. However, doing so relatively increases the dynamic power consumption of the integrated circuit chip, thus causing uneven distribution of voltage values. This phenomenon of uneven distribution of voltage values will cause differences in the voltages of the components in the integrated circuit chip, and in actual work, there may be results that do not meet the designer's expectations.

首先,请参阅图1A,此为一现有的应用于集成电路芯片的电源线结构的俯视图。如图1A所示,一电源线结构1制作于一集成电路芯片19上。该电源线结构1具有多条第一电源带11、多条第二电源带12与一电源环13。同时,该集成电路芯片19的边缘设置有多个电源图案10,该电源图案10电性耦接于一外加电压源。该电源环13环绕在该集成电路芯片19的周围,并通过每一边缘上的导通孔阵列14连接至该电源图案10。该第一电源带11与该第二电源带12相互交错形成一网格形式,并分别连接于电源环13,以在该集成电路芯片19上形成电源电压网络。First, please refer to FIG. 1A , which is a top view of a conventional power line structure applied to an integrated circuit chip. As shown in FIG. 1A , a power line structure 1 is fabricated on an integrated circuit chip 19 . The power cord structure 1 has a plurality of first power strips 11 , a plurality of second power strips 12 and a power ring 13 . Meanwhile, a plurality of power patterns 10 are disposed on the edge of the integrated circuit chip 19 , and the power patterns 10 are electrically coupled to an external voltage source. The power ring 13 surrounds the integrated circuit chip 19 and is connected to the power pattern 10 through the via array 14 on each edge. The first power strips 11 and the second power strips 12 are interlaced to form a grid, and are respectively connected to the power rings 13 to form a power voltage network on the integrated circuit chip 19 .

接着,请参阅图1B,此为图1A所示的集成电路芯片19的电压分布示意图。如图1B所示,当提供1.8V的电源电压给集成电路芯片19时,其工作电压值呈现自外围向内部递减的状态,且其外围与内部的电压差异值高达60mV。造成此现象的原因在于,该第一电源带11与该第二电源带12传输电源电压的路径本身带有电阻,传输路径越长,电压相对地越低;同时,一般而言,该集成电路芯片19内部的组件分布较为密集,因此,越靠近中心,功率消耗值越大。以上两者均为此电压值不均匀分布的成因,而如何降低集成电路芯片19的电压差异值,是设计者一直希望解决的课题。Next, please refer to FIG. 1B , which is a schematic diagram of the voltage distribution of the integrated circuit chip 19 shown in FIG. 1A . As shown in FIG. 1B , when a power supply voltage of 1.8V is provided to the integrated circuit chip 19 , its operating voltage decreases from the periphery to the interior, and the voltage difference between the periphery and the interior is as high as 60 mV. The reason for this phenomenon is that the path for transmitting the power voltage between the first power strip 11 and the second power strip 12 itself has resistance, and the longer the transmission path, the lower the voltage; at the same time, generally speaking, the integrated circuit The components inside the chip 19 are densely distributed, therefore, the closer to the center, the greater the power consumption value. Both of the above are the causes of the uneven distribution of voltage values, and how to reduce the voltage difference value of the integrated circuit chip 19 is a problem that designers have always hoped to solve.

请参阅图2A,此为另一现有的应用于集成电路芯片的电源线结构的俯视图。此现有技术的结构公开于美国专利第6111310号案,该技术为解决上述问题,提出了一种放射状分布的网格状电源线结构。如第图2A所示,电源线结构2的第一电源带21与第二电源带22分别连接至电源环20,该第一电源带21与该第二电源带22形成相互交错的网格形式。此现有技术将该第一电源带21与该第二电源带22的宽度沿其相对于中心的位置作出了改变。Please refer to FIG. 2A , which is a top view of another conventional power line structure applied to an integrated circuit chip. The structure of this prior art is disclosed in US Patent No. 6111310, which proposes a radially distributed grid-like power line structure in order to solve the above problems. As shown in FIG. 2A, the first power strip 21 and the second power strip 22 of the power cord structure 2 are respectively connected to the power ring 20, and the first power strip 21 and the second power strip 22 form a grid form interlaced with each other. . This prior art changes the widths of the first power strip 21 and the second power strip 22 along their positions relative to the center.

接着,请参阅图2B及图2C,图2B为利用图2A的结构所希望改善的电压分布示意图,图2 C为利用图2A的集成电路芯片的电源线结构的电压分布示意图。通过图2B与图2C的比较可知,该6111310案可以将各个电压值差异的区域缩小。然而,显示于图2C的电压差异值仍与图2B中的相同,均为250mV。由此可知,此现有技术并不能降低芯片内部的电压差异值。Next, please refer to FIG. 2B and FIG. 2C. FIG. 2B is a schematic diagram of the voltage distribution expected to be improved by using the structure of FIG. 2A, and FIG. 2C is a schematic diagram of the voltage distribution using the power line structure of the integrated circuit chip of FIG. From the comparison of FIG. 2B and FIG. 2C , it can be known that the 6111310 scheme can reduce the area of each voltage value difference. However, the voltage difference shown in FIG. 2C is still the same as that in FIG. 2B, which is 250 mV. It can be seen that this prior art cannot reduce the voltage difference value inside the chip.

为了解决上述问题,本案发明人提出了本案中的发明内容。本案所提供的技术可有效地降低集成电路芯片内部的电压差异值,进而可以提升其工作效能,从而给本领域带来了很多的益处。In order to solve the above problems, the inventor of this case proposed the content of the invention in this case. The technology provided in this case can effectively reduce the voltage difference value inside the integrated circuit chip, and then can improve its working efficiency, thereby bringing many benefits to the field.

发明内容 Contents of the invention

本发明的目的,在于提供一种集成电路芯片及其电源线结构,其通过用具有相同长宽比的第一电源干道将第一电源带连接至电源图案,以传输电源电压,可以有效地降低集成电路芯片的电压差异值。The purpose of the present invention is to provide an integrated circuit chip and its power line structure, which can effectively reduce the The voltage difference value of an integrated circuit chip.

为了实现上述目的,本发明公开了一种电源线结构,其制作于一集成电路芯片上,该集成电路芯片具有一主金属层及一第一金属层。该电源线结构包括至少一电源图案、多条第一电源带及多条第一电源干道。该电源图案形成在该主金属层的边缘上。该多条第一电源带相互平行地形成在该第一金属层上。该多条第一电源干道相互平行地形成在该主金属层上,该多条第一电源干道用以分别将该多条第一电源带连接至该电源图案,其中,该多条第一电源干道的每条电源干道的干道长度与干道宽度的比值相等。In order to achieve the above object, the present invention discloses a power line structure, which is manufactured on an integrated circuit chip, and the integrated circuit chip has a main metal layer and a first metal layer. The power line structure includes at least one power pattern, a plurality of first power strips and a plurality of first power trunks. The power pattern is formed on the edge of the main metal layer. The plurality of first power strips are formed parallel to each other on the first metal layer. The multiple first power rails are formed parallel to each other on the main metal layer, and the multiple first power rails are used to respectively connect the multiple first power strips to the power pattern, wherein the multiple first power rails The ratio of the length of each main power supply main road to the width of the main road is equal.

在本发明的一具体实施例中,该集成电路芯片还具有一第二金属层,该电源线结构还包括多条第二电源带及多条第二电源干道。该多条第二电源带相互平行地形成在该第二金属层上。该多条第二电源干道相互平行地形成在该主金属层上,该多条第二电源干道分别将该多条第二电源带连接至该至少一电源图案,其中,该多条第二电源干道的每条电源干道的干道长度与干道宽度的比值相等。In a specific embodiment of the present invention, the integrated circuit chip further has a second metal layer, and the power line structure further includes a plurality of second power strips and a plurality of second power trunks. The plurality of second power strips are formed parallel to each other on the second metal layer. The plurality of second power rails are formed parallel to each other on the main metal layer, and the plurality of second power rails respectively connect the plurality of second power strips to the at least one power pattern, wherein the plurality of second power The ratio of the length of each main power supply main road to the width of the main road is equal.

本发明还公开了一种集成电路芯片,包括一第一金属层及一主金属层。该第一金属层上形成有多条第一电源带,且该多条第一电源带相互平行。该主金属层平行于该第一金属层,其上形成有至少一电源图案及多条第一电源干道。该至少一电源图案形成于该主金属层的边缘上,该多条第一电源干道相互平行,并分别将该多条第一电源带连接至该至少一电源图案,其中,该多条第一电源干道的每条电源干道的干道长度与干道宽度的比值相等。The invention also discloses an integrated circuit chip, which includes a first metal layer and a main metal layer. A plurality of first power strips are formed on the first metal layer, and the plurality of first power strips are parallel to each other. The main metal layer is parallel to the first metal layer, and at least one power pattern and a plurality of first power rails are formed on it. The at least one power pattern is formed on the edge of the main metal layer, the plurality of first power rails are parallel to each other, and respectively connect the plurality of first power strips to the at least one power pattern, wherein the plurality of first The ratio of the length of each power trunk to the width of the trunk is equal.

在本发明的一具体实施例中,该集成电路芯片还具有一第二金属层。该第二金属层上形成有多条第二电源带,该多条第二电源带相互平行。该主金属层上还形成有多条第二电源干道,该多条第二电源干道分别将该多条第二电源带连接至该至少一电源图案,其中,该多条第二电源干道的每条电源干道的干道长度与干道宽度的比值相等。In a specific embodiment of the present invention, the integrated circuit chip further has a second metal layer. A plurality of second power strips are formed on the second metal layer, and the plurality of second power strips are parallel to each other. A plurality of second power supply trunks are also formed on the main metal layer, and the plurality of second power supply trunks respectively connect the plurality of second power supply strips to the at least one power supply pattern, wherein each of the plurality of second power supply trunks The ratio of the length of the trunk road to the width of the trunk road is equal.

以下结合附图和具体实施例对本发明进行详细描述,但不作为对本发明的限定。The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

附图说明 Description of drawings

图1A为一现有的应用于集成电路芯片的电源线结构的俯视图;FIG. 1A is a top view of a conventional power line structure applied to an integrated circuit chip;

图1B为图1A的集成电路芯片的电压分布示意图;FIG. 1B is a schematic diagram of the voltage distribution of the integrated circuit chip of FIG. 1A;

图2A为另一现有的应用于集成电路芯片的电源线结构的俯视图;FIG. 2A is a top view of another existing power line structure applied to an integrated circuit chip;

图2B为利用图2A的结构所希望改善的电压分布示意图;FIG. 2B is a schematic diagram of the voltage distribution expected to be improved by using the structure of FIG. 2A;

图2C为利用图2A的集成电路芯片的电源线结构的电压分布示意图;2C is a schematic diagram of voltage distribution using the power line structure of the integrated circuit chip of FIG. 2A;

图3为本发明公开的集成电路芯片及其电源线结构第一实施例的俯视图;3 is a top view of the first embodiment of the integrated circuit chip and its power line structure disclosed by the present invention;

图4为本发明公开的集成电路芯片及其电源线结构第二实施例的俯视图;Fig. 4 is a top view of the second embodiment of the integrated circuit chip and its power line structure disclosed by the present invention;

图5为图4的集成电路芯片的电压分布示意图。FIG. 5 is a schematic diagram of the voltage distribution of the integrated circuit chip in FIG. 4 .

其中,附图标记:Among them, reference signs:

1、2、3、4-電源線結構1, 2, 3, 4-power cord structure

10、30a、30b、40a、40b、40c、40d-电源图案10, 30a, 30b, 40a, 40b, 40c, 40d-power pattern

11、12-电源带11, 12-power belt

13、20-电源环13, 20-power ring

14-导通贯孔阵列14-via array

19、39、49-集成电路芯片19, 39, 49 - integrated circuit chip

21、31a、31b、31c、31d、31e、31f、41a、41b、41c、41d、21, 31a, 31b, 31c, 31d, 31e, 31f, 41a, 41b, 41c, 41d,

41e、41f-第一电源带41e, 41f - first power strip

35a、35b、35c、35d、35e、35f-第一电源干道35a, 35b, 35c, 35d, 35e, 35f-the first main power supply road

36、47-导通贯孔36, 47-conduction through hole

22、42a、42b、42c、42d、42e、42f-第二电源带22, 42a, 42b, 42c, 42d, 42e, 42f - second power strip

45a、45b、45c、45d、45e、45f-第一电源干道45a, 45b, 45c, 45d, 45e, 45f-the first main power supply road

46a、46b、46c、46d、46e、46f-第二电源干道46a, 46b, 46c, 46d, 46e, 46f-the second main power supply

C1、C2-第一中心线C1, C2-the first centerline

C3-第二中心线C3-Second Centerline

具体实施方式 Detailed ways

首先,请参阅图3,此为本发明所公开的集成电路芯片及其电源线结构的第一实施例的俯视图。如图3所示,一电源线结构3被制作在一集成电路芯片39上,该电源线结构3为一均匀分布在集成电路芯片39上的网络,用以电性耦接至外加电压源,以传输电源电压至集成电路芯片39上的组件。First, please refer to FIG. 3 , which is a top view of the first embodiment of the integrated circuit chip and its power line structure disclosed by the present invention. As shown in FIG. 3 , a power line structure 3 is fabricated on an integrated circuit chip 39. The power line structure 3 is a network evenly distributed on the integrated circuit chip 39 for electrically coupling to an external voltage source. To transmit the power supply voltage to the components on the integrated circuit chip 39 .

在第一实施例中,该集成电路芯片39具有一主金属层以及一第一金属层(图中未示出),该主金属层与该第一金属层相互平行。在图3中,该电源线结构3具有二电源图案30a、30b(以下若无特别指明,将每一电源图案标示为30)、多条第一电源带31a、31b、31c、31d、31e、31f(以下若无特别指明,将每一第一电源带标示为31)及多条第一电源干道35a、35b、35c、35d、35e、35f(以下若无特别指明,将每一第一电源干道标示为35)。该电源图案30a、30b形成在该主金属层的边缘上。该多条第一电源带31相互平行地形成在该第一金属层上。同时,该第一电源干道35相互平行地形成在该主金属层上,并用以分别该将第一电源带31连接至该电源图案30a、30b。同时,该主金属层与该第一金属层之间通常用一介电层来作为绝缘间隔。因此,设置在该主金属层的该每一第一电源干道35分别通过一导通贯孔36连接至设置在该第一金属层的该每一第一电源带31。第一实施例中,采用六条第一电源带31及六条第一电源干道35,仅用于示例,并非用以限制本发明的范围。In the first embodiment, the integrated circuit chip 39 has a main metal layer and a first metal layer (not shown), the main metal layer and the first metal layer are parallel to each other. In FIG. 3, the power line structure 3 has two power supply patterns 30a, 30b (hereinafter, unless otherwise specified, each power supply pattern is marked as 30), a plurality of first power strips 31a, 31b, 31c, 31d, 31e, 31f (unless otherwise specified below, mark each first power supply belt as 31) and multiple first power supply trunks 35a, 35b, 35c, 35d, 35e, 35f (unless otherwise specified below, each first power supply The main road is marked as 35). The power pattern 30a, 30b is formed on the edge of the main metal layer. The plurality of first power strips 31 are formed parallel to each other on the first metal layer. Meanwhile, the first power rails 35 are formed parallel to each other on the main metal layer, and are used to respectively connect the first power strips 31 to the power patterns 30a, 30b. Meanwhile, a dielectric layer is usually used as an insulating space between the main metal layer and the first metal layer. Therefore, each of the first power rails 35 disposed on the main metal layer is respectively connected to each of the first power rails 31 disposed on the first metal layer through a conductive via 36 . In the first embodiment, six first power strips 31 and six first power trunks 35 are used for example only, and are not intended to limit the scope of the present invention.

必须一提的是,该电源图案30是指一可与外加电压源导通,以提供电力的区域。图3中的电源图案30a、30b以相互分离的形式设置在主金属层相对应的二边缘上。同时,该电源图案30也可以连续的环绕在主金属层的边缘,第一实施例中的该电源图案30仅为图例,并非用以限制本发明的范围。It must be mentioned that the power pattern 30 refers to a region that can be connected to an external voltage source to provide power. The power supply patterns 30a, 30b in FIG. 3 are disposed on two corresponding edges of the main metal layer in a manner of being separated from each other. Meanwhile, the power supply pattern 30 can also continuously surround the edge of the main metal layer. The power supply pattern 30 in the first embodiment is only an illustration and is not intended to limit the scope of the present invention.

同时,图3显示出了一般的电源线的布局形式,该第一电源干道35大体上垂直地重叠于该第一电源带31。并且,基于较佳的布局方式,该第一电源带31被该集成电路芯片39的第一中心线C1区分为两个部份。也就是说,该第一电源带31可以被与其平行的该第一中心线C1区分为连续分布的M条第一电源带31及N条第一电源带31,M及N分别为一自然数,且M值等于N值。该第一电源干道35个别的将该M条第一电源带31及该N条第一电源带31连接至其分别邻接的电源图案30,以缩短绕线长度。At the same time, FIG. 3 shows a general layout of power lines, the first main power rail 35 is substantially vertically overlapped with the first power strip 31 . Moreover, based on a preferred layout method, the first power strip 31 is divided into two parts by the first central line C1 of the integrated circuit chip 39 . That is to say, the first power supply belt 31 can be divided into M first power supply belts 31 and N first power supply belts 31 distributed continuously by the first central line C1 parallel to it, and M and N are respectively a natural number , and the value of M is equal to the value of N. The first power rails 35 individually connect the M first power strips 31 and the N first power strips 31 to their respective adjacent power patterns 30 , so as to shorten the winding length.

如图3所示,该第一电源带31被该第一中心线C1区分为三条第一电源带31a、31b、31c与另三条第一电源带31d、31e、31f。其中,第一电源带31a、31b、31c分别通过第一电源干道35a、35b、35c连接至金属图案30a;第一电源带31d、31e、31f则分别通过第一电源干道35d、35e、35f连接至金属图案30b。As shown in FIG. 3 , the first power strip 31 is divided into three first power strips 31 a , 31 b , 31 c and another three first power strips 31 d , 31 e , 31 f by the first central line C 1 . Among them, the first power strips 31a, 31b, 31c are respectively connected to the metal pattern 30a through the first power trunks 35a, 35b, 35c; to the metal pattern 30b.

如图3所示,第一电源干道35a、35b、35c、35d、35e、35f分别具有一干道长度L、2L、3L、L、2L、3L及一干道宽度W、2W、3W、W、2W、3W。显而易见地,每一第一电源干道35的干道长度与干道宽度之比值均为L/W。发明人为了降低集成电路芯片39的电压值差异,特别利用具有不同干道长度与干道宽度的第一电源干道35来传输电压源至第一电源带31上,并且,每一第一电源干道35的干道长度与干道宽度的比值相等。如此一来,如式(1)所示,每一第一电源干道35a、35b、35c、35d、35e、35f的电阻相等。电源电压会先由每一第一电源干道35消耗一小部分的电力,再提供给每一第一电源带31。As shown in Figure 3, the first main power supply roads 35a, 35b, 35c, 35d, 35e, 35f respectively have a main road length L, 2L, 3L, L, 2L, 3L and a main road width W, 2W, 3W, W, 2W , 3W. Obviously, the ratio of the trunk length to the trunk width of each first power trunk 35 is L/W. In order to reduce the difference in the voltage value of the integrated circuit chip 39, the inventor specially utilizes the first power trunk 35 with different trunk lengths and trunk widths to transmit the voltage source to the first power strip 31, and each first power trunk 35 The ratio of the length of the main road to the width of the main road is equal. In this way, as shown in formula (1), the resistances of each of the first power mains 35a, 35b, 35c, 35d, 35e, 35f are equal. The power supply voltage is firstly consumed by each first power supply trunk 35 and then supplied to each first power supply belt 31 .

RR sthe s ×× LL WW == RR sthe s ×× 22 LL 22 WW == RR sthe s ×× 33 LL 33 WW .. .. .. .. .. .. .. .. .. .. .. .. (( 11 ))

在式(1)中,RS为长度L与宽度W的单位面积电阻值。In formula (1), R S is the resistance value per unit area of the length L and the width W.

接着,请参阅图4,图4为本发明所公开的集成电路芯片及其电源线结构的第二实施例的俯视图。如图4所示,电源线结构4被制作在集成电路芯片49上。该集成电路芯片49具有相互平行的一主金属层、一第一金属层及一第二金属层(图中未示出)。该电源线结构4包括四个电源图案40a、40b、40c、40d(以下若无特别指明,将每一电源图案标示为40)、多条第一电源带41a、41b、41c、41d、41e、41f(以下若无特别指明,将每一第一电源带标示为41)、多条第二电源带42a、42b、42c、42d、42e、42f(以下若无特别指明,将每一第二电源带标示为42)、多条第一电源干道45a、45b、45c、45d、45e、45f(以下若无特别指明,将每一第一电源干道标示为45)及多条第二电源干道46a、46b、46c、46d、46e、46f(以下若无特别指明,将每一第二电源干道标示为46)。Next, please refer to FIG. 4 , which is a top view of a second embodiment of the integrated circuit chip and its power line structure disclosed by the present invention. As shown in FIG. 4 , the power line structure 4 is fabricated on an integrated circuit chip 49 . The integrated circuit chip 49 has a main metal layer, a first metal layer and a second metal layer (not shown in the figure) parallel to each other. The power line structure 4 includes four power supply patterns 40a, 40b, 40c, 40d (if not specified below, each power supply pattern is marked as 40), a plurality of first power strips 41a, 41b, 41c, 41d, 41e, 41f (unless otherwise specified below, mark each first power supply belt as 41), a plurality of second power supply belts 42a, 42b, 42c, 42d, 42e, 42f (unless otherwise specified below, each second power supply belt marked as 42), a plurality of first power supply trunks 45a, 45b, 45c, 45d, 45e, 45f (hereinafter, unless otherwise specified, each first power supply trunk is marked as 45) and a plurality of second power supply trunks 46a, 46b, 46c, 46d, 46e, 46f (unless otherwise specified below, each second power supply trunk is marked as 46).

如图4所示,该第一电源带41与该第二电源带42分别平行地形成在第一金属层与第二金属层上,而该电源图案40、该第一电源干道45与第二电源干道46形成在该主金属层上。其中,本第二实施例与前述第一实施例的不同之处在于,本实施例中,该电源线结构4的该第一电源带41与该第二电源带42形成了相互垂直交错的网格形式。该第一电源干道45与该第一电源带41相互垂直,同时,该第二电源干道46与该第二电源带42相互垂直。As shown in FIG. 4, the first power strip 41 and the second power strip 42 are respectively formed on the first metal layer and the second metal layer in parallel, and the power pattern 40, the first power rail 45 and the second Power rails 46 are formed on the main metal layer. Wherein, the difference between this second embodiment and the aforementioned first embodiment is that, in this embodiment, the first power supply strip 41 and the second power supply strip 42 of the power supply line structure 4 form a mutually vertical interlaced network. format. The first power trunk 45 is perpendicular to the first power belt 41 , and at the same time, the second power trunk 46 is perpendicular to the second power strip 42 .

基于较佳的布局方式,该第一电源带41被该集成电路芯片49的第一中心线C2区分为两个部份;同时,该第二电源带42被该集成电路芯片49的第二中心线C3区分为两个部份。也就是说,该第一电源带41可以被与其平行的该第一中心线C2区分为连续分布的M条第一电源带41及N条第一电源带41;该第二电源带42可被与其平行的第二中心线C3区分为连续分布的P条第二电源带42及Q条第二电源带42,M、N、P、Q分别为一自然数,M值等于N值,且P值等于Q值。该第一电源干道45分别地将该M条第一电源带41及该N条第一电源带41连接至其分别邻接的电源图案40;该第二电源干道46分别地将该M条第二电源带42及该N条第二电源带42连接至其分别邻接的电源图案40,以缩短绕线长度。Based on the preferred layout mode, the first power strip 41 is divided into two parts by the first central line C2 of the integrated circuit chip 49; Centerline C 3 is divided into two parts. That is to say, the first power supply belt 41 can be divided into M first power supply belts 41 and N first power supply belts 41 distributed continuously by the first central line C2 parallel thereto; the second power supply belt 42 can be It is divided into P second power strips 42 and Q second power strips 42 distributed continuously by the second central line C3 parallel to it, M, N, P, and Q are each a natural number, and the value of M is equal to the value of N, and The P value is equal to the Q value. The first power trunk 45 respectively connects the M first power strips 41 and the N first power strips 41 to their respective adjacent power patterns 40; the second power trunk 46 respectively connects the M second The power strips 42 and the N second power strips 42 are connected to their respective adjacent power patterns 40 to shorten the winding length.

如图4所示,该第一电源带41被该第一中心线C2区分为三条第一电源带41a、41b、41c,以及另三条第一电源带41d、41e、41f。每一第一电源带41被连接至其分别所邻接的电源图案40,以缩短绕线长度。其中,第一电源带41a、41b、41c分别通过第一电源干道45a、45b、45c连接至电源图案40a;第一电源带41d、41e、41f则分别通过第一电源干道45d、45e、45f连接至电源图案40b。As shown in FIG. 4 , the first power strip 41 is divided into three first power strips 41a, 41b, 41c and another three first power strips 41d, 41e, 41f by the first central line C2 . Each first power strip 41 is connected to its respective adjacent power pattern 40 to shorten the winding length. Among them, the first power supply belts 41a, 41b, 41c are respectively connected to the power pattern 40a through the first power trunk roads 45a, 45b, 45c; to power pattern 40b.

同理,该第二电源带42被该第二中心线C3区分为三条第二电源带42a、42b、42c,以及另三条第二电源带42d、42e、42f。每一第二电源带42被连接至其分别邻接的电源图案40,以缩短绕线长度。其中,第二电源带42a、42b、42c分别通过第二电源干道46a、46b、46c连接至电源图案40c;第二电源带42d、42e、42f则分别通过第二电源干道46d、46e、46f连接至电源图案40d。Similarly, the second power strip 42 is divided into three second power strips 42a, 42b, 42c and another three second power strips 42d, 42e, 42f by the second central line C3 . Each second power strip 42 is connected to its respective adjacent power pattern 40 to shorten the winding length. Wherein, the second power supply belts 42a, 42b, 42c are respectively connected to the power supply pattern 40c through the second power main roads 46a, 46b, 46c; the second power supply belts 42d, 42e, 42f are respectively connected through the second power main roads 46d, 46e, 46f to power pattern 40d.

上述每一第一电源干道45与每一第二电源干道46均通过一导通贯孔47分别连接至每一第一电源带41及每一第二电源带42。Each of the above-mentioned first power rails 45 and each of the second power rails 46 are respectively connected to each of the first power strips 41 and each of the second power strips 42 through a conductive through hole 47 .

同时,该第一电源干道45a、45b、45c、45d、45e、45f分别具有一干道长度L、2L、3L、L、2L、3L及一干道宽度W、2W、3W、W、2W、3W。且该第二电源干道46a、46b、46c、46d、46e、46f分别具有一干道长度L、2L、3L、L、2L、3L及一干道宽度W、2W、3W、W、2W、3W。每一第一电源干道45与每一第二电源干道46的干道长度与干道宽度的比值均为L/W。Meanwhile, the first power trunks 45a, 45b, 45c, 45d, 45e, 45f respectively have a trunk length L, 2L, 3L, L, 2L, 3L and a trunk width W, 2W, 3W, W, 2W, 3W. And the second power trunks 46a, 46b, 46c, 46d, 46e, 46f respectively have a trunk length L, 2L, 3L, L, 2L, 3L and a trunk width W, 2W, 3W, W, 2W, 3W. The ratio of the trunk length to the trunk width of each first power trunk 45 and each second power trunk 46 is L/W.

接着,请参阅图5,此为图4的集成电路芯片49的电压分布图。发明人为证明所提出的方案可降低集成电路芯片49的电压差异,特别利用电压降分析软件模拟了本发明所提供的第二实施例的集成电路芯片49的电压分布状况。根据图5的模拟结果,该集成电路芯片49的电压结构形成四个区块,每一区块的电压值逐步地从外围向内部递减,而电压差异值仅为15mV,远低于现有技术所提供的数种电源线结构的电压差异值。Next, please refer to FIG. 5 , which is a voltage distribution diagram of the integrated circuit chip 49 in FIG. 4 . In order to prove that the proposed scheme can reduce the voltage difference of the integrated circuit chip 49 , the inventor especially used voltage drop analysis software to simulate the voltage distribution of the integrated circuit chip 49 according to the second embodiment of the present invention. According to the simulation result of FIG. 5, the voltage structure of the integrated circuit chip 49 forms four blocks, and the voltage value of each block gradually decreases from the periphery to the inside, and the voltage difference is only 15mV, which is far lower than that of the prior art. Voltage differential values for several power cord configurations are provided.

通过以上具体实例可以知道:本发明所公开的集成电路芯片及其电源线结构,利用了具有相同电阻值的电源干道,将电源带连接至电源图案。如此一来,就可以降低集成电路芯片内部与外围的电压差异值,提升电压值的均匀度,进而使该集成电路芯片的工作效能与设计者的预期结果相符合。From the above specific examples, it can be known that the integrated circuit chip and its power line structure disclosed in the present invention utilize the main power line with the same resistance value to connect the power strip to the power pattern. In this way, the voltage difference between the inside and outside of the integrated circuit chip can be reduced, and the uniformity of the voltage value can be improved, so that the working performance of the integrated circuit chip can meet the expected result of the designer.

当然,本发明还可有其他多种实施例,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。Of course, the present invention can also have other various embodiments, and those skilled in the art can make various corresponding changes and deformations according to the present invention without departing from the spirit and essence of the present invention, but these corresponding Changes and deformations should all belong to the protection scope of the appended claims of the present invention.

Claims (27)

1, a kind of power line structure is characterized in that, this power line structure is produced on the integrated circuit (IC) chip, and this integrated circuit (IC) chip has a main metal level and a first metal layer, and this power line structure comprises:
At least one power supply pattern is formed on the edge of this main metal level;
Many first Power supply belts are formed on this first metal layer in parallel to each other;
Many first power supply arterial highways, be formed in parallel to each other on this main metal level, these many first power supply arterial highways were in order to should be connected to this at least one power supply pattern by many first Power supply belts respectively, and wherein the arterial highway length of every power supply arterial highway of these many first power supply arterial highways equates with the ratio of arterial highway width.
2, power line structure as claimed in claim 1 is characterized in that, these many first power supply arterial highways are overlapped in these many first Power supply belts with vertical in form.
3, power line structure as claimed in claim 1 is characterized in that, these many first power supply arterial highways are connected to these many first Power supply belts by the conducting perforation respectively.
4, power line structure as claimed in claim 1, it is characterized in that, these many first Power supply belts are divided into M bar first Power supply belt and N bar first Power supply belt of continuous distribution by one first center line of this integrated circuit (IC) chip, M and N are respectively a natural number, and this first center line is parallel to this first Power supply belt.
5, power line structure as claimed in claim 4 is characterized in that, this M value equates with this N value.
6, power line structure as claimed in claim 4 is characterized in that, these many first power supply arterial highways are connected to its this at least one power supply pattern of institute's adjacency respectively with this M bar first Power supply belt and this N bar first Power supply belt respectively.
7, power line structure as claimed in claim 6 is characterized in that, this integrated circuit (IC) chip also has one second metal level, and this power line structure also comprises:
Many second source bands are formed on this second metal level in parallel to each other;
Many second source arterial highways, be formed in parallel to each other on this main metal level, these many second source arterial highways should be connected to this at least one power supply pattern by many second source bands respectively, and wherein, the arterial highway length of every power supply arterial highway of these many second source arterial highways equates with the ratio of arterial highway width.
8, power line structure as claimed in claim 7 is characterized in that, these many second source arterial highways are connected to this many second source bands by the conducting perforation respectively.
9, power line structure as claimed in claim 8 is characterized in that, these many second source bands are overlapped in these many first Power supply belts with vertical in form, and these many second source arterial highways are overlapped in this many second source bands with vertical in form.
10, power line structure as claimed in claim 9, it is characterized in that, these many second source bands are divided into the P bar second source band and the Q bar second source band of continuous distribution by one second center line of this integrated circuit (IC) chip, P and Q are respectively a natural number, and this second center line is parallel to this second source band.
11, power line structure as claimed in claim 10 is characterized in that, this P value and this Q value equate.
12, power line structure as claimed in claim 10 is characterized in that, these many second source arterial highways are connected to its this at least one power supply pattern of institute's adjacency respectively with this P bar second source band and this Q bar second source band respectively.
13, power line structure as claimed in claim 7 is characterized in that, the arterial highway length of every power supply arterial highway of these many first power supply arterial highways and these many second source arterial highways equates with the ratio of arterial highway width.
14, a kind of integrated circuit (IC) chip is characterized in that, comprising:
One the first metal layer is formed with many first Power supply belts on this first metal layer, these many first Power supply belts are parallel to each other;
One main metal level, be parallel to this first metal layer, be formed with at least one power supply pattern and many first power supply arterial highways on this main metal level, this at least one power supply pattern is formed on the edge of this main metal level, these many first power supply arterial highways are parallel to each other, and should be connected to this at least one power supply pattern by many first Power supply belts respectively, wherein, the arterial highway length of every power supply arterial highway of these many first power supply arterial highways equates with the ratio of arterial highway width.
15, integrated circuit (IC) chip as claimed in claim 14 is characterized in that, these many first power supply arterial highways are overlapped in these many first Power supply belts with vertical in form.
16, integrated circuit (IC) chip as claimed in claim 14 is characterized in that, these many first power supply arterial highways are connected to this first Power supply belt by the conducting perforation respectively.
17, integrated circuit (IC) chip as claimed in claim 14, it is characterized in that, these many first Power supply belts are divided into M bar first Power supply belt and N bar first Power supply belt of continuous distribution by one first center line of this integrated circuit (IC) chip, M and N are respectively a natural number, and this first center line is parallel to this first Power supply belt.
18, integrated circuit (IC) chip as claimed in claim 17 is characterized in that, this M value equates with this N value.
19, integrated circuit (IC) chip as claimed in claim 17 is characterized in that, these many first power supply arterial highways are connected to its this at least one power supply pattern of institute's adjacency respectively with this M bar first Power supply belt and this N bar first Power supply belt respectively.
20, integrated circuit (IC) chip as claimed in claim 19 is characterized in that, also has one second metal level, is formed with many second source bands on this second metal level, and these many second source bands are parallel to each other.
21, integrated circuit (IC) chip as claimed in claim 20, it is characterized in that, also be formed with many second source arterial highways on this main metal level, these many second source arterial highways should be connected to this at least one power supply pattern by many second source bands respectively, and wherein the arterial highway length of every power supply arterial highway of these many second source arterial highways equates with the ratio of arterial highway width.
22, integrated circuit (IC) chip as claimed in claim 21 is characterized in that, these many second source bands are overlapped in these many first Power supply belts with vertical in form, and these many second source arterial highways are overlapped in this many second source bands with vertical in form.
23, integrated circuit (IC) chip as claimed in claim 21 is characterized in that, this second source arterial highway is connected to this second source band by the conducting perforation respectively.
24, integrated circuit (IC) chip as claimed in claim 21, it is characterized in that, these many second source bands are divided into the P bar second source band and the Q bar second source band of continuous distribution by one second center line of this integrated circuit (IC) chip, P and Q are respectively a natural number, and this second center line is parallel to this second source band.
25, integrated circuit (IC) chip as claimed in claim 24 is characterized in that, this P value and this Q value equate.
26, integrated circuit (IC) chip as claimed in claim 24 is characterized in that, these many second source arterial highways are connected to its this at least one power supply pattern of institute's adjacency respectively with this P bar second source band and this Q bar second source band respectively.
27, integrated circuit (IC) chip as claimed in claim 21 is characterized in that, the arterial highway length of every power supply arterial highway of these many first power supply arterial highways and these many second source arterial highways equates with the ratio of arterial highway width.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI683230B (en) * 2018-08-03 2020-01-21 財團法人成大研究發展基金會 Chip and power planning method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112287631B (en) * 2019-07-11 2024-07-26 瑞昱半导体股份有限公司 Power supply metal wire planning method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6111310A (en) * 1998-09-30 2000-08-29 Lsi Logic Corporation Radially-increasing core power bus grid architecture
US6653726B1 (en) * 2001-09-07 2003-11-25 Lsi Logic Corporation Power redistribution bus for a wire bonded integrated circuit
US6747349B1 (en) * 2002-12-31 2004-06-08 Lsi Logic Corporation Termination ring for integrated circuit
CN1572028A (en) * 2001-10-17 2005-01-26 国际商业机器公司 Integrated circuit bus grid having wires with pre-selected variable widths

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6111310A (en) * 1998-09-30 2000-08-29 Lsi Logic Corporation Radially-increasing core power bus grid architecture
US6653726B1 (en) * 2001-09-07 2003-11-25 Lsi Logic Corporation Power redistribution bus for a wire bonded integrated circuit
CN1572028A (en) * 2001-10-17 2005-01-26 国际商业机器公司 Integrated circuit bus grid having wires with pre-selected variable widths
US6747349B1 (en) * 2002-12-31 2004-06-08 Lsi Logic Corporation Termination ring for integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
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