TWI541581B - Method for manufacturing pattern structure and method for manufacturing transparent conductive structure - Google Patents

Description

Pattern structure manufacturing method and transparent conductive structure manufacturing method

The present invention relates to an imprint technique, and more particularly to a method of fabricating a pattern structure.

Generally, when an embossing process is used to form a patterned film, the embossed pattern structure of the mold core is first subjected to surface modification treatment so that the convex portion and the concave portion of the embossed pattern structure are close to the transfer material. Or the nature of alienation. For example, the surface modification treatment causes the projection of the embossed pattern structure of the mold core to have the property of alienating the transfer material, and the depressed portion has the property of being close to the transfer material. By the difference in the adsorption force of the transfer material on the convex portion and the concave portion, the portion of the transfer material to be imprinted to the substrate, for example, the portion of the transfer material on the convex portion, can be smoothly separated from the mold and adhered. On the surface of the substrate.

However, when the surface modification process of the mold core is performed, it is difficult to accurately and extensively control the modified position of the surface of the mold. In addition, the material to be transferred needs to overcome the adhesion problem between the mold and the mold, and can be successfully transferred to the surface of the substrate, but the surface modification treatment of the mold core is difficult to control, so that the pattern of the final imprint is easily deformed or damaged.

Therefore, one aspect of the present invention provides a method for fabricating a pattern structure and a method for fabricating a transparent conductive structure, which are formed by electrophoretic or dielectrophoretic methods on an embossed pattern structure of a mold core. Transfer material layer. Since the transfer material is not adhered to the mold core by virtue of its affinity for the mold core, the transfer material has a weak adhesion to the mold core, and can be smoothly released, thereby greatly increasing the success rate of the stamp. Moreover, the steps of this method are few and simple, and there is no need to carry out in a vacuum system, and the process speed is fast.

Another aspect of the present invention provides a method for fabricating a pattern structure and a method for fabricating a transparent conductive structure, wherein an electric field can be uniformly applied to a surface or a predetermined area of the entire embossed pattern structure of the mold core, so that the mold core can be Uniform adsorption of the transfer material in a wide area, so it can not only be applied to large embossing area, but also can effectively avoid the damage of the pattern structure of the transfer, and can improve the stability of the embossing, thereby improving the yield of the embossing process. .

Another aspect of the present invention provides a method for fabricating a pattern structure and a method for fabricating a transparent conductive structure, which can limit the position of the transfer material on the mold core by providing an insulating layer on the surface of the mold core. The thickness is thus effective to control the pattern resolution and height of the transfer pattern structure.

In accordance with the above object of the present invention, a method of fabricating a pattern structure is provided which comprises the following steps. A mold core is provided, wherein one side of the mold core is provided with an embossed pattern structure. The embossed pattern structure includes at least one protrusion and at least one recess. An electrophoresis process or a dielectrophoresis process is performed to form a layer of transfer material on the embossed pattern structure. Wherein the transfer material layer At least on the top surface of the at least one protrusion or at least one recess. An imprinting step is performed to transfer the layer of transfer material on the top surface of the at least one projection or at least one of the recesses onto the surface of the substrate.

According to an embodiment of the invention, the embossed pattern structure has a conductive surface.

According to another embodiment of the invention, the material of the mold core is a conductive material.

In accordance with still another embodiment of the present invention, the transfer material layer is conformally overlaid on the embossed pattern structure.

According to still another embodiment of the present invention, before the step of forming the transfer material layer, the pattern structure is further formed by forming an insulating layer covering the bottom surface of the at least one recessed portion, wherein the transfer material layer is located at least On a bulge.

According to still another embodiment of the present invention, the top surface of the insulating layer is lower than the top surface of the at least one protruding portion.

According to still another embodiment of the present invention, the top surface of the insulating layer is coplanar with the top surface of the at least one protruding portion.

According to still another embodiment of the present invention, the top surface of the insulating layer is higher than the top surface of the at least one protruding portion.

According to still another embodiment of the present invention, the material of the insulating layer is a compressible material.

According to still another embodiment of the present invention, before the step of forming the transfer material layer, the pattern structure is further formed by forming an insulating layer covering the top surface of the at least one protrusion. Wherein the above transfer material layer Located in at least one of the recesses.

According to still another embodiment of the present invention, the material of the transfer material layer comprises a metal, a conductive carbon series material, a conductive polymer material, a transparent conductive material or a composite thereof.

According to still another embodiment of the present invention, the material of the transfer material layer comprises micron-sized particles, a micro-nano-scale one-dimensional structure, and/or a micro-nano-scale two-dimensional structure.

According to still another embodiment of the present invention, when the electrophoresis process or the dielectrophoresis process is performed, a solution is used, and an ultrasonic shock treatment, a solution disturbance treatment or a solution agitation treatment is performed on the solution.

According to still another embodiment of the present invention, when the electrophoresis process or the dielectrophoresis process is performed, the voltage is applied by a pulse method.

According to still another embodiment of the present invention, before the performing the imprinting step or after the imprinting step, the method for fabricating the pattern structure further comprises performing a compacting treatment on the transfer material layer.

According to still another embodiment of the present invention, the compacting treatment performed before the performing the imprinting step comprises incorporating a binder into the material of the transfer material layer.

According to still another embodiment of the present invention, the compacting treatment comprises performing a compacting treatment, an electroless plating treatment, a plating treatment, a polymerization treatment or a heat treatment on the transfer material layer.

According to the above object of the present invention, there is further provided a method of fabricating a transparent conductive structure comprising the following steps. Providing a mold core, wherein one side of the mold core is provided with an embossed pattern structure, and the embossed pattern structure comprises at least one convex The outlet is at least one recessed portion. An electrophoresis process or a dielectrophoresis process is performed to form a layer of transfer material on the embossed pattern structure. The transfer material layer is located at least on the top surface of the at least one protrusion or at least one of the recesses, and the transfer material layer is a transparent conductive layer. An imprinting step is performed to transfer the transfer material layer on the top surface of the at least one protrusion or at least one of the recesses onto the surface of a substrate.

According to an embodiment of the invention, the transfer material layer comprises a transparent conductive material comprising a metal, a conductive carbon series material, indium tin oxide, aluminum-doped zinc oxide, antimony-doped tin oxide, fluorine-doped tin oxide. Or its composite.

According to another embodiment of the present invention, the transfer material layer comprises a composite of a micro-nano metal material and graphite.

According to still another embodiment of the present invention, the transfer material layer comprises a conductive micro-nano material, a composite with a transparent conductive material or a conductive polymer material.

According to still another embodiment of the present invention, the embossed pattern structure has a conductive surface.

According to still another embodiment of the present invention, the material of the mold core is a conductive material.

In accordance with still another embodiment of the present invention, the transfer material layer is conformally overlaid on the embossed pattern structure.

According to still another embodiment of the present invention, before the step of forming the transfer material layer, the method for fabricating the transparent conductive structure further comprises forming an insulating layer covering the bottom surface of the at least one recessed portion, wherein the transfer material layer is located At least one of the protrusions.

According to still another embodiment of the present invention, the top surface of the insulating layer is lower than the top surface of the at least one protruding portion.

According to still another embodiment of the present invention, a top surface of the insulating layer is coplanar with a top surface of at least one of the protrusions.

According to still another embodiment of the present invention, a top surface of the insulating layer is higher than a top surface of at least one of the protrusions.

According to still another embodiment of the present invention, the material of the insulating layer is a compressible material.

According to still another embodiment of the present invention, before the step of forming the transfer material layer, the method for fabricating the transparent conductive structure further comprises forming an insulating layer covering the top surface of the at least one protruding portion, wherein the transfer material layer is located At least one recessed portion.

According to still another embodiment of the present invention, the performing the electrophoresis process or the dielectrophoresis process comprises using a solution, and performing an ultrasonic oscillating treatment, a solution agitation treatment or a solution agitation treatment on the solution.

According to still another embodiment of the present invention, the performing the electrophoresis process or the dielectrophoresis process comprises applying a voltage by a pulse method.

According to still another embodiment of the present invention, before the performing the imprinting step or after the imprinting step, the method for fabricating the transparent conductive structure further comprises performing a compacting treatment on the transfer material layer.

According to still another embodiment of the present invention, the compacting treatment performed before the performing the imprinting step comprises incorporating a binder into the material of the transfer material layer.

According to still another embodiment of the present invention, the compacting treatment comprises performing a compacting treatment, an electroless plating treatment, a plating treatment, a polymerization treatment or a heat treatment on the transfer material layer.

100‧‧‧Men

102‧‧‧ side

104‧‧‧embossed pattern structure

106‧‧‧Depression

108‧‧‧Protruding

110‧‧‧Transfer material layer

Section 110a‧‧‧

Section 110b‧‧‧

112‧‧‧Substrate

114‧‧‧ surface

116‧‧‧ top surface

118‧‧‧Transparent conductive film

120‧‧‧ upper surface

200‧‧‧Men

202‧‧‧ side

204‧‧‧embossed pattern structure

206‧‧‧Depression

208‧‧‧protrusion

210‧‧‧Insulation

212‧‧‧Transfer material layer

Section 212a‧‧‧

Section 212b‧‧‧

214‧‧‧Substrate

216‧‧‧ surface

218‧‧‧ top surface

220‧‧‧ bottom

222‧‧‧ top surface

300‧‧‧Men

302‧‧‧ side

304‧‧‧embossed pattern structure

306‧‧‧Depression

308‧‧‧ protruding parts

310‧‧‧Insulation

312‧‧‧Transfer material layer

314‧‧‧Substrate

316‧‧‧ surface

318‧‧‧ top surface

320‧‧‧ bottom

322‧‧‧ top surface

400‧‧‧Men

402‧‧‧ side

404‧‧‧embossed pattern structure

406‧‧‧Depression

408‧‧‧ protruding parts

410‧‧‧Insulation

412‧‧‧Transfer material layer

414‧‧‧Substrate

416‧‧‧ surface

418‧‧‧ top surface

420‧‧‧ bottom

422‧‧‧ top surface

500‧‧‧Men

502‧‧‧ side

504‧‧‧embossed pattern structure

506‧‧‧Depression

508‧‧‧ protruding parts

510‧‧‧Insulation

512‧‧‧Transfer material layer

514‧‧‧Substrate

516‧‧‧ surface

518‧‧‧ top surface

520‧‧‧ bottom

522‧‧‧ top surface

524‧‧‧ side

The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood.

1A to 1D are cross-sectional views showing a process of a pattern structure according to a first embodiment of the present invention.

2A to 2D are cross-sectional views showing a process of a pattern structure in accordance with a second embodiment of the present invention.

3A to 3D are cross-sectional views showing a process of a pattern structure in accordance with a third embodiment of the present invention.

4A to 4D are cross-sectional views showing a process of a pattern structure in accordance with a fourth embodiment of the present invention.

5A to 5D are cross-sectional views showing a process of a pattern structure in accordance with a fourth embodiment of the present invention.

Figure 6 is a cross-sectional view showing a transparent conductive structure in accordance with an embodiment of the present invention.

Referring to FIGS. 1A to 1D, there are shown process cross-sectional views of a pattern structure in accordance with a first embodiment of the present invention. The pattern forming method of the present embodiment can be applied to fabricate various patterns having a pattern, such as a transparent conductive structure having a pattern. This embodiment utilizes an imprint process To make the pattern structure. Therefore, when the pattern structure is formed, the mold core 100 for imprinting can be provided first. One side 102 of the mold core 100 is provided with an embossed pattern structure 104. In some embodiments, as shown in FIG. 1A, the embossed pattern structure 104 includes a plurality of protrusions 108 and a plurality of recesses 106, wherein the protrusions 108 are interleaved with the recesses 106. In other embodiments, the embossed pattern structure 104 can include at least one protrusion 108 and at least one recess 106.

The mold core 100 can be made of a soft or hard material, so the material of the mold core 100 can be selected according to the properties of the substrate 112 to be imprinted (please refer to FIG. 1C first). In some embodiments, the material of the mold core 100 is a conductive material, that is, the entire mold core 100 is an electrical conductor. In other embodiments, the body of the mold core 100 is not a conductor, but the side of the side 102 of the mold core 100 provided with the embossed pattern structure 104 is covered with a conductive layer, such as a conductive diamond-like carbon, a conductive diamond film or a graphite film. Thereby, the embossed pattern structure 104 has a conductive surface. In still other embodiments, a conductive layer may be disposed only on the area where the mold core 100 is to be transferred, such as only the top surface 116 of the projection 108 of the embossed pattern structure 104, or only the recess 106. A conductive layer is disposed on the bottom surface and the side surface. Thereby, the transfer material layer 110 can be subsequently formed by an electrophoresis process or a dielectrophoresis process (refer to FIG. 1B first), and the transfer material is smoothly formed on the conductive region on the embossed pattern structure 104 of the mold core 100.

In some exemplary embodiments, the surface of the imprint pattern structure 104 of the mold core 100, particularly the surface of the material to be transferred, such as the top surface 116 of the projection 108 of the embossed pattern structure 104, or depression may be selectively applied. The bottom surface and the side surface of the portion 106 are subjected to anti-stick treatment or surface modification treatment such as coating of graphite sheets, so that the transfer material is more easily separated from the mold core 100 and transferred to the substrate. 112 on. In other exemplary embodiments, when the surface of the embossed pattern structure 104 of the mold core 100 is subjected to anti-sticking treatment, the mold core 100 may be directly formed using conductive diamond-like carbon, conductive diamond or graphite. Thereby, the surface of the embossed pattern structure 104 of the formed mold core 100 is rendered resistant to sticking without the need for additional anti-sticking treatment of the surface of the embossed pattern structure 104.

Next, the mold core 100 is subjected to an electrophoresis process or a dielectrophoresis process to adsorb the transfer material onto the embossed pattern structure 104, and the transfer material layer 110 is formed on the embossed pattern structure 104. In the present embodiment, as shown in FIG. 1B, the mold core 100 is a conductive mold, and thus the transfer material layer 110 conformally covers the embossed pattern structure 104. In some embodiments, the pattern of material of the transfer material layer 110 comprises micronanoscale particles, micronanoscale one-dimensional structures, and/or micronanoscale two-dimensional structures. The micro-nano-scale one-dimensional structure may include, for example, a nanowire, a nanocolumn, a nanotube, or the like. The micron-sized two-dimensional structure may include, for example, a nanosheet and a nanodisk.

Further, in some embodiments, the material of the transfer material layer 110 comprises a metal, a conductive carbon series material, a conductive polymer material, a transparent conductive material, or a composite material of the above materials. The metal may, for example, comprise copper, nickel and silver, and the like. The conductive carbon series material may include, for example, a graphite sheet, a graphite powder, a carbon nanotube, a graphene, or the like. The transparent conductive material may, for example, comprise indium tin oxide (In:SnO ₂ , ITO), aluminum-doped zinc oxide (Al:ZnO, AZO), antimony-doped tin oxide (Sb:SnO ₂ , ATO) and fluorine-doped tin oxide (F: SnO ₂ , FTO), etc. In an exemplary embodiment, the material of the transfer material layer 110 may be a composite of metal and graphite, wherein the content of graphite is from 1% by weight to 20% by weight, and graphite may serve as an adhesive to increase the adhesion of the transfer material. In addition, the addition of graphite can also make the pattern structure formed by the portion of the transfer material layer 110 black, thereby avoiding the formation of a moiré pattern when the pattern structure is subsequently applied. In another exemplary embodiment, the material of the transfer material layer 110 may be a composite of a metal and a conductive polymer material, wherein the content of the conductive polymer material is 1% by weight to 10% by weight, and the conductive polymer material can be used as an adhesive. Increase the adhesion of the transfer material.

When performing an electrophoresis process or a dielectrophoresis process, a voltage can be applied to the mold core 100 in a continuous manner or in a pulsed manner. In the embodiment in which the pulse voltage is applied, the structure of the transfer material layer 110 adsorbed on the mold core 100 can be made more compact by the suction and discharge of the transfer material by the mold core 100. Electrophoresis or dielectrophoresis processes involve the use of a solution, such as a colloidal solution. This solution is a fluid having a transfer material. During the electrophoresis or dielectrophoresis process, the solution may be disturbed or the solution may be disturbed by flow or vibration. In some embodiments, the solution may be subjected to ultrasonic vibration processing during the electrophoresis or dielectrophoresis process. For example, when transferring a one-dimensional or two-dimensional micro-nano material, the materials adsorbed on one or two-dimensional structure of the embossed pattern structure 104 may not only be located on the area to be transferred, but may also be extended. The portion to be transferred is protruded from the area to be transferred, and the portion of the dimension or the two-dimensional material protruding from the region to be transferred can be shattered by ultrasonic vibration, whereby the resolution of the transfer pattern can be improved. In some particular embodiments, the solution can be ultrasonically oscillated simultaneously with a pulsed voltage applied to the mold core 100.

In the embodiment, the method of forming a transfer material layer on the embossed pattern structure 104 of the mold core 100 by using an electrophoresis process or a dielectrophoresis process is small and simple, does not need to be performed in a vacuum system, and has a high process speed, and Can be applied to large embossed areas.

After the transfer material layer 110 is formed on the mold core 100, as shown in FIG. 1C, the stamping step is performed by the mold core 100. When the imprinting step is performed, the substrate 112 is first provided. Next, the embossed pattern structure 104 of the mold core 100 is pressed against the surface 114 of the substrate 112 such that the transfer material layer 110 on the top surface 116 of the projection 108 and the surface 114 of the substrate 112 are joined. The material of the substrate 112 may be an inorganic material, an organic material, or a composite material in which an inorganic substance and an organic substance are mixed. Further, the substrate 112 may be formed of a flexible material or a material that is inflexible. In some embodiments, the surface 114 of the substrate 112 may be additionally surface treated to enhance the attractiveness of the surface 114 of the substrate 112 to the transfer material layer 110, thereby further enhancing the yield of the transfer.

Subsequently, the mold core 100 is separated from the substrate 112. At this time, since the transfer material layer 110 is adhered to the surface of the embossed pattern structure 104 of the mold core 100 by an electrophoresis process or a dielectrophoresis process, the adhesion of the transfer material layer 110 to the mold core 100 is weak. Therefore, the portion 110b of the transfer material layer 110 bonded to the surface 114 of the substrate 112 can be smoothly separated from the mold core 100, transferred onto the surface 114 of the substrate 112, and the portion 110a of the transfer material layer 110 located at the recess 106. Stay on the mold core 100 as shown in Figure 1D. At this time, the fabrication of the pattern structure composed of the portion 110b of the transfer material layer 110 has been substantially completed.

In some embodiments, the transfer material layer 110 on the embossed pattern structure 104 of the mold core 100 may be subjected to a compacting process prior to the embossing step or after the embossing step to effect the transfer material layer 110. The structure is more compact and solid, and the conductivity of the transfer material layer 110 can be improved. In a demonstration example In the compacting process before the embossing step, the transfer material layer 110 may be directly compacted on the substrate 112 to be embossed, or the transfer material layer 110 may be compacted on the non-stick substrate. It is then transferred to the surface 114 of the substrate 112. In another exemplary embodiment, when the compacting process is performed before the imprinting step, a binder, such as graphite and a polymer material, may be first incorporated in the material of the transfer material layer 110, thereby lifting the transfer material layer 110. The adhesion between the materials and the conductivity of the transfer material layer 110 can be improved. In still another exemplary example, when the transfer material layer 110 is a metal material, the transfer material layer 110 may be subjected to a plating treatment or an electroless plating treatment to fill a gap between materials of the transfer material layer 110, thereby compacting The structure of the transfer material layer 110 is adjusted, and the conductivity of the transfer material layer 110 is improved.

In still another exemplary embodiment, when the compacting treatment is performed, the polymer monomer may be first doped into the material of the transfer material layer 110, and then the transfer material layer 110 may be made by, for example, irradiation with ultraviolet light or heating. The material is polymerized, thereby compacting the structure of the transfer material layer 110 and enhancing the conductivity of the transfer material layer 110. In still another exemplary embodiment, when the compacting process is performed, the transfer material layer 110 may be heated to enhance the bonding between the materials of the transfer material layer 110, and even the transfer material layer 110 may be slightly melted into the substrate 112. Thereby, the structure of the compact transfer material layer 110, the adhesion of the portion 110b of the transfer material layer 110 transferred onto the substrate 112 to the substrate 112, and the improvement of the conductivity of the transfer material layer 110 are achieved. In some examples, when the transfer material layer 110 is heated, high-frequency heating, ultrasonic heating, and laser heating may be employed.

The pattern structure of the present invention can also be fabricated with an insulating layer use. Referring to FIGS. 2A to 2D, there are shown process cross-sectional views of a pattern structure in accordance with a second embodiment of the present invention. In the present embodiment, when the pattern structure is formed, the mold core 200 for imprinting may be provided first. One side 202 of the mold core 200 is provided with an embossed pattern structure 204. In some embodiments, as shown in FIG. 2A, the embossed pattern structure 204 includes a plurality of staggered projections 208 and a plurality of recesses 206. In other embodiments, the embossed pattern structure 204 can include at least one protrusion 208 and at least one recess 206.

In the present embodiment, the selection of the material of the mold core 200 and the material and setting principle of the conductive layer are the same as those of the mold core 100 in the first embodiment described above, and thus will not be described herein. In some exemplary embodiments, the surface of the imprint pattern structure 204 of the mold core 200, particularly the surface of the material to be transferred, such as the top surface 218 of the projection 208 of the imprint pattern structure 204, may be selectively resisted. Surface modification such as adhesion treatment or coating of graphite sheets, or direct use of conductive diamond-like carbon, conductive diamond or graphite and other anti-adhesive materials to make the mold 200, so that the transfer material is easier to separate from the mold 200 Transfer onto the substrate 214 (please refer to Figure 2C first).

In the present embodiment, as shown in FIG. 2A, after the mold core 200 is provided, the insulating layer 210 is further formed to cover the bottom surface 220 of the depressed portion 206 of the embossed pattern structure 204. The insulating layer 210 does not fill the recess 206, so the top surface 222 of the insulating layer 210 is lower than the top surface 218 of the protrusion 208. The material of the insulating layer 210 may be an inorganic material, an organic material, or a composite material composed of an organic material and an inorganic material. The purpose of providing the insulating layer 210 on the mold core 200 is to prevent the transfer material from being attracted to the insulating layer 210 by the electric field during subsequent electrophoresis or dielectrophoresis processes.

Next, the mold core 200 is subjected to an electrophoresis process or a dielectrophoresis process to adsorb the transfer material onto the embossed pattern structure 204, and a transfer material layer 212 is formed on the embossed pattern structure 204. In the present embodiment, as shown in FIG. 2B, the mold core 200 is a conductive mold, and the insulating layer 210 covers the bottom surface 220 of the depressed portion 206 of the embossed pattern structure 204, so that the transfer material layer 212 is formed only in the convex portion. On the exit 208. In the present embodiment, the material type and the material type of the transfer material layer 212 are selected in the same manner as the transfer material layer 110 in the first embodiment, and the selection of the electrophoresis process or the dielectrophoresis process is also performed. The electrophoresis process or the dielectrophoresis process of the first embodiment is the same, and thus will not be described herein.

After the transfer material layer 212 is formed on the mold core 200, as shown in Fig. 2C, the stamping step is performed by the mold core 200. When the imprinting step is performed, the substrate 214 is first provided. Next, the embossed pattern structure 204 of the mold core 200 is pressed against the surface 216 of the substrate 214 to bond the transfer material layer 212 on the top surface 218 of the projection 208 to the surface 216 of the substrate 214. The material of the substrate 214 may be an inorganic material, an organic substance, or a composite material in which an inorganic substance and an organic substance are mixed. Further, the substrate 214 may be composed of a flexible material or a material that is inflexible. In some embodiments, the surface 216 of the substrate 214 may be additionally surface treated to enhance the attractiveness of the surface 216 of the substrate 214 to the transfer material layer 212, thereby further enhancing the yield of the transfer.

Subsequently, the mold core 200 is separated from the substrate 214. At this time, the portion 212b of the transfer material layer 212 bonded to the surface 216 of the substrate 214 can be smoothly separated from the mold core 200, transferred onto the surface 216 of the substrate 214, and the portion of the transfer material layer 212 located at the recess portion 206. 212a remains on the mold core 200, As shown in Figure 2D. At this time, the fabrication of the pattern structure composed of the portion 212b of the transfer material layer 212 has been substantially completed. In the present embodiment, as in the first embodiment described above, the transfer material layer 212 on the embossed pattern structure 204 of the mold core 200 may be compacted before the embossing step or after the embossing step. In order to make the structure of the transfer material layer 212 more compact and solid, and to improve the conductivity of the transfer material layer 212. The timing of the compaction processing of the present embodiment is the same as that of the first embodiment, and thus will not be described again.

Referring to FIGS. 3A to 3D, there are shown process cross-sectional views of a pattern structure in accordance with a third embodiment of the present invention. In the present embodiment, when the pattern structure is formed, the mold core 300 for imprinting may be provided first. One side 302 of the mold core 300 is provided with an embossed pattern structure 304. In some embodiments, as shown in FIG. 3A, the embossed pattern structure 304 includes a plurality of staggered projections 308 and a plurality of recesses 306. In other embodiments, the embossed pattern structure 304 can include at least one protrusion 308 and at least one recess 306.

In the present embodiment, the selection of the material of the mold core 300 and the material and setting principle of the conductive layer are the same as those of the mold core 100 in the first embodiment described above, and thus will not be described herein. In some exemplary embodiments, the surface of the imprint pattern structure 304 of the mold core 300, particularly the surface of the material to be transferred, i.e., the top surface 318 of the projection 308 of the imprint pattern structure 304, may be selectively resisted. Surface modification such as adhesion treatment or coating of graphite sheets, or direct use of anti-adhesive materials such as conductive diamond carbon, conductive diamond or graphite to make the mold core 300, so that the transfer material is easier to separate from the mold core 300 Transfer in The substrate 314 (please refer to FIG. 3C first).

In the present embodiment, as shown in FIG. 3A, after the mold core 300 is provided, the insulating layer 310 is further formed on the bottom surface 320 of the recess portion 306 of the embossed pattern structure 304, and the insulating layer 310 is filled with the recess portion. 306. In addition, the top surface 322 of the insulating layer 310 is coplanar with the top surface 318 of the protrusion 308, that is, the top surface 322 of the insulating layer 310 is equal to the top surface 318 of the protrusion 308. The material of the insulating layer 310 may be an inorganic material, an organic material, or a composite material composed of an organic material and an inorganic material. The purpose of providing the insulating layer 310 on the mold core 300 is also to prevent the transfer material from being attracted to the insulating layer 310 by the electric field during subsequent electrophoresis or dielectrophoresis processes.

Next, the mold core 300 is subjected to an electrophoresis process or a dielectrophoresis process to adsorb the transfer material onto the embossed pattern structure 304, and a transfer material layer 312 is formed on the embossed pattern structure 304. In the present embodiment, the material type and the material type of the transfer material layer 312 are selected in the same manner as the transfer material layer 110 in the first embodiment, and the selection of the electrophoresis process or the dielectrophoresis process is also performed. The electrophoresis process or the dielectrophoresis process of the first embodiment is the same, and thus will not be described herein.

In the present embodiment, as shown in FIG. 3B, the mold core 300 is a conductive mold, and the top surface 322 of the insulating layer 310 is equal to the top surface 318 of the convex portion 308 of the embossed pattern structure 304, and thus is transferred. Material layer 312 is formed only on top surface 318 of projections 308. Thereby, the design of the insulating layer 310 can more precisely control the size of the transfer material layer 312 to be transferred to the substrate 314, thereby improving the resolution of the transferred pattern structure. In addition, since the transfer material is not adsorbed on the insulating layer 310, it can be transferred onto the substrate 314. The upper patterned structure layer does not have a residual layer.

After the transfer material layer 312 is formed on the mold core 300, as shown in Fig. 3C, the stamping step is performed by the mold core 300. When the imprinting step is performed, the substrate 314 is first provided. Next, the embossed pattern structure 304 of the mold core 300 is pressed against the surface 316 of the substrate 314, and the transfer material layer 312 on the top surface 318 of the projection 308 is bonded to the surface 316 of the substrate 314. The material of the substrate 314 may be an inorganic material, an organic material, or a composite material in which an inorganic substance and an organic substance are mixed. Further, the substrate 314 may be composed of a flexible material or a material that is inflexible. In some embodiments, the surface 316 of the substrate 314 may be additionally surface treated to enhance the attractiveness of the surface 316 of the substrate 314 to the transfer material layer 312, thereby further enhancing the yield of the transfer.

Subsequently, the mold core 300 is separated from the substrate 314. At this time, since the entire transfer material layer 312 is bonded to the surface 316 of the substrate 314, the transfer material layer 312 can be smoothly separated from the mold core 300 and transferred to the surface 316 of the substrate 314 as shown in FIG. 3D. . Thus far, the fabrication of the pattern structure composed of the transfer material layer 312 has been substantially completed. In the present embodiment, as in the first embodiment described above, the transfer material layer 312 on the embossed pattern structure 304 of the mold core 300 may be compacted before the embossing step or after the embossing step. In order to make the structure of the transfer material layer 312 more compact and solid, and to improve the conductivity of the transfer material layer 312. The tightening process of the present embodiment can be applied in the same manner as the first embodiment, and thus will not be described again.

Please refer to FIG. 4A to FIG. 4D, which are cross-sectional views showing a process of a pattern structure according to a fourth embodiment of the present invention. In this implementation In the method, when the pattern structure is formed, the mold core 400 for imprinting may be provided first. One side 402 of the mold core 400 is provided with an embossed pattern structure 404. In some embodiments, as shown in FIG. 4A, the embossed pattern structure 404 includes a plurality of staggered projections 408 and a plurality of recesses 406. In other embodiments, the embossed pattern structure 404 can include at least one protrusion 408 and at least one recess 406.

In the present embodiment, the selection of the material of the mold core 400 and the material and setting principle of the conductive layer are the same as those of the mold core 100 in the first embodiment described above, and thus will not be described herein. In some exemplary embodiments, the surface of the imprint pattern structure 404 of the mold core 400, particularly the surface of the material to be transferred, i.e., the top surface 418 of the projection 408 of the imprint pattern structure 404, may be selectively resisted. Surface modification such as adhesion treatment or coating of graphite sheets, or direct use of conductive diamond-like carbon, conductive diamond or graphite and other anti-adhesive materials to make the mold core 400, so that the transfer material is easier to separate from the mold core 400 Transfer onto the substrate 414 (please refer to Figure 4C first).

In the present embodiment, as shown in FIG. 4A, after the mold core 400 is provided, the insulating layer 410 is further formed to cover the bottom surface 420 of the depressed portion 406 of the embossed pattern structure 404, and the insulating layer 410 is filled with the depressed portion. 406 and protrudes from the projection 408. That is, the top surface 422 of the insulating layer 410 is higher than the top surface 418 of the protrusion 408. The material of the insulating layer 410 may be an inorganic material, an organic material, or a composite material composed of an organic material and an inorganic material. In some embodiments, the material of the insulating layer 410 is a compressible material, such as a polymer material or a porous material, to facilitate the subsequent transfer process. The purpose of providing the insulating layer 410 on the mold core 400 is also to avoid subsequent During the electrophoresis or dielectrophoresis process, the transfer material is attracted to the place where the insulating layer 410 is located due to the electric field.

Next, the mold core 400 is subjected to an electrophoresis process or a dielectrophoresis process to adsorb the transfer material onto the embossed pattern structure 404, and a transfer material layer 412 is formed on the embossed pattern structure 404. In the present embodiment, the material type and the material type of the transfer material layer 412 are selected in the same manner as the transfer material layer 110 in the first embodiment, and the selection of the electrophoresis process or the dielectrophoresis process is also performed. The electrophoresis process or the dielectrophoresis process of the first embodiment is the same, and thus will not be described herein.

In the present embodiment, as shown in FIG. 4B, the mold core 400 is a conductive mold, and the top surface 422 of the insulating layer 410 is higher than the top surface 418 of the protrusion 408 of the embossed pattern structure 404. Therefore, the transfer material is blocked and restricted by the insulating layer 410 during the electrophoresis or dielectrophoresis process, and adheres only to the top surface 418 of the protrusion 408, so that the transfer material layer 412 is formed only at the top of the protrusion 408. Face 418. Thereby, the design of the insulating layer 410 can more precisely control the size of the transfer material layer 412 to be transferred to the substrate 414, thereby improving the resolution of the transferred pattern structure. Further, the thickness of the transferred pattern structure can be controlled by adjusting the thickness of the insulating layer 410. Moreover, since the transfer material is not adsorbed on the insulating layer 410, the pattern structure layer transferred onto the substrate 414 can be made to have no residual layer.

In some embodiments, as shown in FIG. 4B, in the electrophoresis or dielectrophoresis process, the transfer material layer 412 may be slightly higher than the top surface 422 of the insulating layer 410 even if the transfer material layer 412 slightly protrudes from the insulating layer 410. . In such an embodiment, as shown in FIG. 4C, the stamping step is performed using the mold core 400, When the embossed pattern 404 of the mold core 400 is pressed against the surface 416 of the substrate 414, since the transfer material layer 412 slightly protrudes from the insulating layer 410, the transfer material layer 412 on the top surface 418 of the protrusion 408. The surface 416 of the substrate 414 can be smoothly joined.

In other embodiments, the insulating layer 410 is comprised of a compressible material, and the transfer material layer 412 can be lower than the top surface 422 of the insulating layer 410 or the top surface 422 of the insulating layer 410. In such an embodiment, the insulating layer 410 can be deformed by compressing the insulating layer 410 during the imprinting process, whereby the transfer material layer 410 can be smoothly contacted to the surface 416 of the substrate 414.

The material of the substrate 414 may be an inorganic material, an organic material, or a composite material in which an inorganic substance and an organic substance are mixed. Further, the substrate 414 may be constructed of a flexible material or a material that is inflexible. In some embodiments, the surface 416 of the substrate 414 may be additionally surface treated to enhance the attractiveness of the surface 416 of the substrate 414 to the transfer material layer 412, thereby further enhancing the yield of the transfer.

Subsequently, the mold core 400 is separated from the substrate 414. At this time, since the entire transfer material layer 412 is bonded to the surface 416 of the substrate 414, the transfer material layer 412 can be smoothly separated from the mold core 400 and transferred to the surface 416 of the substrate 414 as shown in FIG. 4D. . Thus far, the fabrication of the pattern structure composed of the transfer material layer 412 has been substantially completed. In the present embodiment, as in the first embodiment described above, the transfer material layer 412 on the embossed pattern structure 404 of the mold core 400 may be compacted before the embossing step or after the embossing step. In order to make the structure of the transfer material layer 412 more compact and solid, and to improve the conductivity of the transfer material layer 412. The compaction process of this embodiment can be used in the same manner as the first embodiment, so Narration.

Referring to FIGS. 5A to 5D, there are shown process cross-sectional views of a pattern structure in accordance with a fifth embodiment of the present invention. In the present embodiment, when the pattern structure is formed, the mold core 500 for imprinting may be provided first. One side 502 of the mold core 500 is provided with an embossed pattern structure 504. In some embodiments, as shown in FIG. 5A, the embossed pattern structure 504 includes a plurality of staggered projections 508 and a plurality of recesses 506. In other embodiments, the embossed pattern structure 504 can include at least one protrusion 508 and at least one recess 506. This embodiment is used to fabricate a pattern structure having a pattern of recesses 506 of the embossed pattern structure 504.

In the present embodiment, the selection of the material of the mold core 500 and the material and setting principle of the conductive layer are the same as those of the mold core 100 in the first embodiment described above, and thus will not be described herein. In some exemplary embodiments, the surface of the embossed pattern structure 504 of the mold core 500, particularly the surface of the material to be transferred, that is, the bottom surface 520 and the side surface 524 of the recess 506 of the embossed pattern structure 504 may be selectively performed. Anti-adhesive treatment or surface modification of coated graphite sheets, or direct use of conductive diamond-like carbon, conductive diamond or graphite and other anti-adhesive materials to make mold 500, so that the transfer material is easier to get rid of the mold core 500 And transferred to the substrate 514 (please refer to Figure 5C first).

In the present embodiment, as shown in FIG. 5A, after the mold core 500 is provided, the insulating layer 510 is further formed to cover the top surface 518 of the protruding portion 508 of the embossed pattern structure 504. The material of the insulating layer 510 may be an inorganic material, an organic material, or a composite material composed of an organic material and an inorganic material. In some embodiments, the material of the insulating layer 510 is a compressible material, such as a high score. Sub-materials or materials with porosity, etc., in order to facilitate the subsequent transfer process. The purpose of providing the insulating layer 510 on the mold core 500 is also to prevent the transfer material from being attracted to the insulating layer 510 by the electric field during subsequent electrophoresis or dielectrophoresis processes.

Next, the mold core 500 is subjected to an electrophoresis process or a dielectrophoresis process to adsorb the transfer material onto the embossed pattern structure 504, and a transfer material layer 512 is formed on the embossed pattern structure 504. In the present embodiment, the selection of the material type and the material type of the transfer material layer 512 are the same as those of the transfer material layer 110 in the first embodiment, and the selection of the electrophoresis process or the dielectrophoresis process is also performed. The electrophoresis process or the dielectrophoresis process of the first embodiment is the same, and thus will not be described herein.

In the present embodiment, as shown in FIG. 5B, the mold core 500 is a conductive mold, and the insulating layer 510 covers only the top surface 518 of the projection 508 of the embossed pattern structure 504. Therefore, the transfer material is blocked and restricted by the insulating layer 510 during the electrophoresis or dielectrophoresis process, and is filled in the recess 506, so that the formed transfer material layer 512 is only located in the recess 506 and the insulating layer 510. Inside the opening. Thereby, the design of the insulating layer 510 can more precisely control the size of the transfer material layer 512 to be transferred to the substrate 514, thereby improving the resolution of the transferred pattern structure. Further, the thickness of the transferred pattern structure can be controlled by adjusting the thickness of the insulating layer 510 and the depth of the depressed portion 506. Moreover, since the transfer material is not adsorbed on the insulating layer 510, the pattern structure layer transferred onto the substrate 514 can be prevented from having a residual layer.

In some embodiments, the insulating layer 510 is made of a compressible material. The composition, and the transfer material layer 512 may be lower than the top surface 522 of the insulating layer 510 or the top surface 522 of the insulating layer 510. In such an embodiment, as shown in FIG. 5C, when the imprinting process is performed by the mold core 500, the insulating layer 510 can be deformed by compressing the insulating layer 510, whereby the transfer material layer 512 can be smoothly contacted to the substrate. Surface 516 of 514.

In other embodiments, the transfer material layer 512 can be slightly above the top surface 522 of the insulating layer 510 even though the transfer material layer 512 slightly protrudes from the insulating layer 510. In such an embodiment, when the embossed pattern structure 504 of the mold core 500 is pressed against the surface 516 of the substrate 514, since the transfer material layer 512 protrudes slightly from the insulating layer 510, the transfer material layer in the depressed portion 506 512 can smoothly engage the surface 516 of the substrate 514.

The material of the substrate 514 may be an inorganic material, an organic material, or a composite material in which an inorganic substance and an organic substance are mixed. Further, the substrate 514 may be composed of a flexible material or a material that is inflexible. In some embodiments, the surface 516 of the substrate 514 may be additionally surface treated to enhance the attractiveness of the surface 516 of the substrate 514 to the transfer material layer 512, thereby further enhancing the yield of the transfer.

Subsequently, the mold core 500 is separated from the substrate 514. At this time, since the entire transfer material layer 512 is bonded to the surface 516 of the substrate 514, the transfer material layer 512 can be smoothly separated from the mold core 500 and transferred to the surface 516 of the substrate 514 as shown in FIG. 5D. . Thus far, the fabrication of the pattern structure composed of the transfer material layer 512 has been substantially completed. In the present embodiment, as in the first embodiment described above, the transfer material layer 512 on the embossed pattern structure 504 of the mold core 500 may be compacted before the embossing step or after the embossing step. To make the structure of the transfer material layer 512 closer It is solidified and enhances the conductivity of the transfer material layer 512. The tightening process of the present embodiment can be applied in the same manner as the first embodiment, and thus will not be described again.

Hereinafter, an embodiment in which a patterned transparent conductive structure is fabricated will be exemplified in conjunction with the first embodiment described above, and other embodiments may be combined in the case of fabricating a patterned transparent conductive structure. Please refer to FIG. 1A to FIG. 1D and FIG. 6 together. FIG. 6 is a cross-sectional view showing a transparent conductive structure according to an embodiment of the present invention. First, a mold core 100 for imprinting is provided. In some embodiments, as shown in FIG. 1A, the embossed pattern structure 104 includes at least one protrusion 108 and at least one recess 106, wherein the protrusions 108 are staggered with the recesses 106. The selection of the material of the mold core 100, the material and setting principle of the conductive layer, and the anti-adhesion treatment method are the same as those in the first embodiment described above, and thus will not be described herein.

Next, as shown in FIG. 1B, the mold core 100 is subjected to an electrophoresis process or a dielectrophoresis process to adsorb the transfer material onto the embossed pattern structure 104, and the transfer material layer 110 is formed on the embossed pattern structure 104. . The selection of the manner of performing the electrophoresis process or the dielectrophoresis process of the present embodiment is the same as that of the electrophoresis process or the dielectrophoresis process of the first embodiment described above, and thus will not be described herein.

In the present embodiment, the transfer material layer 110 conformally covers the embossed pattern structure 104. In some embodiments, the pattern of material of the transfer material layer 110 comprises micronanoscale particles, micronanoscale one-dimensional structures, and/or micronanoscale two-dimensional structures. That is, the dimensions of each of the length, width and height of each micronite particle, micronite one-dimensional structure and micronial two-dimensional structure Inch is less than 1μm. The micro-nano-scale one-dimensional structure may include, for example, a nanowire, a nanocolumn, a nanotube, or the like. The micron-sized two-dimensional structure may include, for example, a nanosheet and a nanodisk.

In an embodiment in which a transparent conductive structure is fabricated, the transfer material layer 110 is a transparent conductive layer. In addition, the material of the transfer material layer 110 may include a metal, a conductive carbon series material, and/or a transparent conductive material such as indium tin oxide, aluminum-doped zinc oxide, antimony-doped tin oxide, and fluorine-doped tin oxide. In some exemplary examples, the material of the transfer material layer 110 may be a composite of a micro-nano metal material and graphite, wherein the content of the graphite is from 1% by weight to 20% by weight. Graphite can be used as an adhesive to increase the adhesion of the transfer material, and the pattern structure formed by the portion of the transfer material layer 110 can be made black to avoid the formation of moiré. In another exemplary embodiment, the material of the transfer material layer 110 may be a composite of a conductive micro-nano material, a transparent conductive material, or a conductive high-molecular material. Wherein, the content of the conductive polymer material is 1% by weight to 10% by weight, and the conductive polymer material can be used as an adhesive to increase the adhesion of the transfer material.

Next, the stamping step is performed using the mold core 100. When the imprinting step is performed, as shown in FIG. 1C, the substrate 112 is first provided, and then the embossed pattern structure 104 of the mold core 100 is pressed against the surface 114 of the substrate 112 to be placed on the top surface 116 of the projection 108. The transfer material layer 110 is bonded to the surface 114 of the substrate 112. The material of the substrate 112 may be an inorganic material, an organic material, or a composite material in which an inorganic substance and an organic substance are mixed. Further, the substrate 112 may be formed of a flexible material or a material that is inflexible. In an exemplary embodiment, substrate 112 can be a transparent substrate such as glass and transparent plastic. In some embodiments, the surface 114 of the substrate 112 may be additionally surface treated to enhance the substrate. The attraction of surface 114 of 112 to transfer material layer 110.

Next, as shown in FIG. 1D, the mold core 100 is separated from the substrate 112 such that the portion 110b of the transfer material layer 110 joined to the surface 114 of the substrate 112 is separated from the mold core 100 and transferred to the surface 114 of the substrate 112. on. At the same time, the portion 110a of the transfer material layer 110 located at the depressed portion 106 remains on the mold core 100. In some embodiments, fabrication of the transparent conductive structure comprised of portion 110b of transfer material layer 110 has now been completed.

In other embodiments, as shown in FIG. 6, the transparent conductive film 118 is formed to cover the surface 114 of the substrate 112 and the portion 110b of the transfer material layer 110. On the transparent conductive structure. That is, the transparent conductive structure of these embodiments includes, in addition to the underlying transparent conductive structure composed of the portion 110b of the transfer material layer 110, a transparent conductive film 118 over the underlying transparent conductive structure. In an exemplary example, the transparent conductive film 118 has a solid flat upper surface 120. The material of the transparent conductive film 118 may be a transparent conductive inorganic material or a transparent conductive polymer material. In an exemplary embodiment, the transparent conductive film 118 comprises a ceramic material or a polymer material, and a conductive nano-material such as a transparent conductive nano particle, a one-dimensional structure, and/or a two-dimensional structure, wherein the conductive nano material is blended with In ceramic materials or polymer materials.

It can be seen from the above embodiments that one of the advantages of the present invention is that the method of the present invention forms a transfer material layer on the embossed pattern structure of the mold core by means of electrophoresis or dielectrophoresis, so that the transfer material has adhesion to the mold core. It is weaker and can be demolded smoothly, which can greatly improve the embossing success rate. Moreover, the steps of this method are few and simple, and there is no need to carry out in a vacuum system. The process speed is fast.

It can be seen from the above embodiments that another advantage of the present invention is that the electric field can be uniformly applied to the surface or the predetermined area of the entire embossed pattern structure of the mold core when the transfer material layer is formed, so that the mold core can be widely used. The transfer material is uniformly adsorbed in the region, so the method of the invention can not only be applied to the large embossing area, but also can effectively avoid the damage of the pattern structure of the transfer, and can improve the stability of the embossing, thereby improving the embossing process. rate.

It can be seen from the above embodiments that another advantage of the present invention is that the position and thickness of the transfer material formed on the mold core can be restricted by providing an insulating layer on the surface of the mold core, thereby effectively controlling the transfer pattern structure. The resolution and height of the pattern.

While the present invention has been described above by way of example, it is not intended to be construed as a limitation of the scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

300‧‧‧Men

304‧‧‧embossed pattern structure

306‧‧‧Depression

308‧‧‧ protruding parts

310‧‧‧Insulation

312‧‧‧Transfer material layer

318‧‧‧ top surface

320‧‧‧ bottom

322‧‧‧ top surface

Claims (35)

A method for fabricating a pattern structure, comprising: providing a mold core, wherein one side of the mold core is provided with an embossed pattern structure, the embossed pattern structure comprising at least one convex portion and at least one concave portion; using a solution to the mold Performing an electrophoresis process or a dielectrophoresis process, wherein the solution is a fluid having a transfer material, and when the electrophoresis process or the dielectrophoresis process is performed, the transfer material in the fluid is adsorbed to the imprint pattern structure Forming a transfer material layer on the embossed pattern structure, wherein the transfer material layer is located at least on one of the top surfaces of the at least one protrusion or the at least one recess; and performing an embossing step, Transferring the transfer material layer on the top surface of the at least one protrusion or the at least one recess to a surface of one of the substrates. The method of fabricating the pattern structure of claim 1, wherein the embossed pattern structure has a conductive surface. The method of fabricating the pattern structure of claim 2, wherein the material of the mold core is a conductive material. The method of fabricating the pattern structure of claim 2, wherein the transfer material layer conformally covers the embossed pattern structure. The method for fabricating the pattern structure according to claim 2, further comprising forming an insulating layer covering a bottom surface of the at least one recessed portion before the step of forming the transfer material layer, wherein the transfer material layer is located At least one projection on. The method of fabricating the pattern structure of claim 5, wherein a top surface of the insulating layer is lower than the top surface of the at least one protrusion. The method of fabricating the pattern structure of claim 5, wherein a top surface of the insulating layer is coplanar with the top surface of the at least one protrusion. The method of fabricating the pattern structure of claim 5, wherein a top surface of the insulating layer is higher than the top surface of the at least one protrusion. The method of fabricating the pattern structure of claim 5, wherein the material of the insulating layer is a compressible material. The method for fabricating the pattern structure according to claim 2, before the step of forming the transfer material layer, further comprising forming an insulating layer covering a top surface of the at least one protruding portion, wherein the transfer material layer Located in the at least one recess. The method for fabricating a pattern structure according to claim 1, wherein the material of the transfer material layer comprises a metal, a conductive carbon series material, a conductive polymer material, a transparent conductive material or a composite thereof. The method for fabricating a pattern structure according to claim 1, wherein the material of the transfer material layer comprises micron-sized particles, micro-nano-scale one-dimensional structures, and/or micro-nano-sized two-dimensional structures. The method for fabricating a pattern structure according to claim 1, wherein the electrophoresis process or the dielectrophoresis process comprises performing an ultrasonic oscillating treatment, a solution agitation treatment or a solution agitation treatment on the solution. The method for fabricating a pattern structure according to claim 1, wherein the electrophoresis process or the dielectrophoresis process comprises applying a voltage by a pulse method. The method for fabricating the pattern structure according to claim 1, further comprising performing a compacting treatment on the transfer material layer before or after performing the imprinting step. The method of fabricating the pattern structure of claim 15, wherein the compacting treatment performed prior to performing the imprinting step comprises incorporating a binder into the material of the transfer material layer. The method for fabricating a pattern structure according to claim 15, wherein the compacting treatment comprises performing a compacting treatment, an electroless plating treatment, a plating treatment, a polymerization treatment or a heat treatment on the transfer material layer. A method for fabricating a transparent conductive structure, comprising: providing a mold core, wherein one side of the mold core is provided with an embossed pattern structure, the embossed pattern structure comprising at least one convex portion and at least one concave portion; performing an electrophoresis process or An electrophoretic process to form a transfer material layer on the embossed pattern structure, wherein the transfer material layer is located at least at least one a top surface of the protrusion or the at least one recess, and the transfer material layer is a transparent conductive layer; and performing an imprinting step to be located on the top surface of the at least one protrusion or The transfer material layer in at least one of the depressed portions is transferred to a surface of one of the substrates. The method of fabricating a transparent conductive structure according to claim 18, wherein the transfer material layer comprises a transparent conductive material comprising a metal, a conductive carbon series material, indium tin oxide, aluminum-doped zinc oxide, ytterbium-doped oxidation. Tin, fluorine-doped tin oxide or a composite thereof. The method of fabricating a transparent conductive structure according to claim 18, wherein the transfer material layer comprises a composite of a micro-nano metal material and graphite. The method of fabricating a transparent conductive structure according to claim 18, wherein the transfer material layer comprises a conductive micro-nano material, a composite with a transparent conductive material or a conductive polymer material. The method of fabricating a transparent conductive structure according to claim 18, wherein the embossed pattern structure has a conductive surface. The method of fabricating a transparent conductive structure according to claim 22, wherein the material of the mold core is a conductive material. The method of fabricating a transparent conductive structure according to claim 22, wherein the transfer material layer conformally covers the embossed pattern structure. The method for fabricating the transparent conductive structure according to claim 22, further comprising forming an insulating layer covering a bottom surface of the at least one recessed portion, wherein the transfer material layer is located before the step of forming the transfer material layer The at least one protrusion is on the portion. The method of fabricating a transparent conductive structure according to claim 25, wherein a top surface of the insulating layer is lower than the top surface of the at least one protrusion. The method of fabricating a transparent conductive structure according to claim 25, wherein a top surface of the insulating layer is coplanar with the top surface of the at least one protrusion. The method of fabricating a transparent conductive structure according to claim 25, wherein a top surface of the insulating layer is higher than the top surface of the at least one protruding portion. The method of fabricating a transparent conductive structure according to claim 25, wherein the material of the insulating layer is a compressible material. The method for fabricating a transparent conductive structure according to claim 22, further comprising forming an insulating layer covering a top surface of the at least one protruding portion before the step of forming the transfer material layer, wherein the transfer material The layer is located within the at least one recess. The method for fabricating a transparent conductive structure according to claim 18, wherein the performing the electrophoresis process or the dielectrophoresis process comprises: using a solution; The solution is subjected to an ultrasonic shock treatment, a solution disturbance treatment or a solution agitation treatment. The method for fabricating a transparent conductive structure according to claim 18, wherein the performing the electrophoresis process or the dielectrophoresis process comprises applying a voltage by a pulse method. The method for fabricating a transparent conductive structure according to claim 18, further comprising performing a compacting treatment on the transfer material layer before or after performing the imprinting step. The method of fabricating a transparent conductive structure according to claim 33, wherein the compacting treatment performed before the performing the imprinting step comprises incorporating a binder into the material of the transfer material layer. The method of fabricating a transparent conductive structure according to claim 33, wherein the compacting treatment comprises performing a compacting treatment, an electroless plating treatment, a plating treatment, a polymerization treatment or a heat treatment on the transfer material layer.