TWI412145B - Silicon-based solar cell having a heterogeneous structure and a manufacturing method therefor - Google Patents

Abstract

A silicon-based solar cell having a heterogeneous structure includes a silicon (100) substrate and a III-nitrite layer. The silicon (100) substrate includes a silicon (111) plane which is a processed surface. A manufacturing method for the silicon-based solar cell is the III-nitrite layer grown on the silicon (111) plane so as to form a heterogeneous structure. Formed between the silicon (111) plane and the III-nitrite layer is a serially connected heterogeneous interface.

Description

Silicon-based solar cell with heterostructure and manufacturing method thereof

The present invention relates to a germanium-based solar cell having a heterostructure and a method of fabricating the same; and more particularly to a germanium-nitride [III-nitride] grown on a (111) crystal plane [Silicon (111) plane] Base solar cell and method of manufacturing the same.

At present, in the traditional solar cell manufacturing industry, most of the twin solar cells are mainly made of ruthenium (100) wafers. In addition, in the semiconductor material of the group III-nitride, for example, an indium gallium nitride material [InGaN material], the applicable wavelength range covers almost all solar spectra, and thus the tri-n-nitride semiconductor The future has great potential to develop into high-performance solar cells.

However, since the tri-nitride samples are mostly grown on a relatively high cost sapphire substrate, their manufacturing costs are relatively high. If the tri-nitride can grow on other substrates of relatively low cost [for example, a germanium substrate], the manufacturing cost can be greatly reduced.

In fact, the ruthenium (100) substrate can be processed to form a crystal plane that is just suitable for growing a tri-nitride material layer. Meanwhile, since the tri-n-nitride material has a hexagonal structure, it is suitable for growing on a specific bond crystal plane of the ruthenium (100) substrate and forming a heterogeneous structure. For example, the Republic of China Patent Application Publication No. 201024207 is similar to a hexagonal three-family-nitrogen semiconductor nanocolumn structure invention patent case, which discloses that a tri-n-nitride material has a hexagonal column structure or a hexagon The nano-column structure of a hexagram-like shape is incorporated herein by reference.

In short, a conventional samar-based solar cell can optionally grow a tri-nitride material layer on a ruthenium (100) substrate. Therefore, there is a need for a conventional ruthenium (100) substrate to further improve the formation of a ruthenium-based solar cell structure that is suitable for the growth of a tri-n-nitride material crystal face.

In view of the above, in order to improve the above disadvantages or to meet the above needs, the present invention provides a germanium-based solar cell having a heterostructure and a method for fabricating the same, in which a tri-n-nitride material layer is appropriately grown on a substrate (100). In order to form a heterostructure, the purpose of manufacturing a high-performance solar cell is achieved.

The main object of the present invention is to provide a germanium-based solar cell having a heterostructure and a method for fabricating the same, which suitably grow a tri-nitride material layer on a substrate (100) to form a heterostructure to achieve fabrication. The purpose of high performance solar cells.

In order to achieve the above object, a germanium-based solar cell having a heterostructure of the present invention comprises: a germanium (100) substrate comprising a germanium (111) crystal face, the germanium (111) crystal face being a roughened surface; a tri-n-nitride material layer grown on the germanium (111) crystal plane and forming a heterostructure; wherein the tantalum (111) crystal plane and the tri-n-nitride material layer form a tandem type Heterogeneous junction.

The method for manufacturing a germanium-based solar cell having a heterostructure comprises: roughening processing on a germanium (100) substrate to form a germanium (111) crystal plane, and the germanium (111) crystal plane belongs to a a roughened surface; a tri-n-nitride material is grown on the germanium (111) crystal plane to form a tri-n-nitride material layer, and the germanium (111) crystal plane and the tri-n-nitride material layer A series of heterojunctions are formed between them.

In the preferred embodiment of the invention, the iridium (111) crystal mask has a pyramid group structure.

The roughened surface of the preferred embodiment of the present invention is formed by an etching process.

The etching process of the preferred embodiment of the invention employs a potassium hydroxide [KOH] solution.

The tri-n-nitride material layer of the preferred embodiment of the invention has a hexagonal pillar structure.

The tri-nitride material layer of the preferred embodiment of the invention is formed of an indium gallium nitride material.

In order to fully understand the present invention, the preferred embodiments of the present invention are described in detail below and are not intended to limit the invention.

The germanium-based solar cell having a heterostructure according to a preferred embodiment of the present invention and a method of fabricating the same can be applied to the manufacture of a germanium-based solar cell and related art, but are not intended to limit the scope of application of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a perspective view showing the surface of a germanium-based solar cell having a heterostructure according to a preferred embodiment of the present invention. Referring to FIG. 1 , a germanium-based solar cell having a heterostructure according to a preferred embodiment of the present invention has a germanium-based solar cell surface 1 including a germanium (100) substrate 11 and a third. Family-nitride material layer 12.

Referring again to FIG. 1, the 矽 (100) substrate 11 includes a germanium (111) crystal plane 110 which is a roughened surface for increasing the absorbed light energy. In the preferred embodiment of the invention, the roughened surface is formed by an etching process, and a potassium hydroxide [KOH] solution or other equivalent etching solution is used in the etching process. After the etching process, the 矽(111) crystal mask has a pyramid group structure.

Attachment 1 discloses a germanium-based solar cell having a heterostructure according to a preferred embodiment of the present invention and a method for fabricating the same, which is etched on a 矽(111) crystal plane to form a pyramid group structure and magnified 5000 times a field emission scanning electron microscope [SEM Image top view [left] and side view [right]. Please refer to the attached picture 1, each pyramid is about several μm in size, and each side of the pyramid is a 矽(111) crystal plane.

Referring to FIG. 1 again, the tri-n-nitride material layer 12 of the preferred embodiment of the present invention is grown on the ytterbium (111) crystal plane 110 by a suitable technique, and is grown using a tri-n-nitride material. A thin film layer and a heterostructure. The tri-n-nitride material layer has a hexagonal pillar structure, and a tandem-type heterojunction is formed between the germanium (111) crystal plane 110 and the tri-n-nitride material layer 12.

Attachment 2 discloses a germanium-based solar cell having a heterostructure according to a preferred embodiment of the present invention and a method for fabricating the same, in which a field emission of a ternary-nitride material layer is grown by 5000 times at a pyramid side surface of a ytterbium (111) crystal plane Scanning electron microscope [SEM] image side view [left] and top view [right]. Referring to the attachment 2, a thin film layer is grown on the side surface of the pyramid, and the thin film layer is the tri-n-nitride material layer. The tri-nitride material layer of the preferred embodiment of the invention is formed of an indium gallium nitride material.

Attachment 3: a bismuth-based solar cell having a heterostructure according to a preferred embodiment of the present invention and a method for fabricating the same, which is capable of cutting a pyramid side surface of a 矽(111) crystal face and a thin film layer by a transmission electron microscope [TEM] Image and electron beam diffraction pattern. Please refer to the attached picture 3 to obtain an electron microscope image by performing a transmission electron microscope measurement on the pyramid side surface of the 矽(111) crystal plane and the film layer [left image]. In addition, the bright spot pattern of the electron beam diffraction pattern [right image] shows that the pyramid side surface is a 矽 (111) crystal plane.

Furthermore, the method for fabricating a germanium-based solar cell having a heterostructure according to a preferred embodiment of the present invention comprises: first, performing a roughening process on a substrate (100) [eg, etching treatment with a potassium hydroxide solution or Other processing] to form a germanium (111) crystal plane, and the germanium (111) crystal plane belongs to a roughened surface; and then, a tri-n-nitride material is grown on the germanium (111) crystal plane [ For example: indium gallium nitride material], forming a tri-n-nitride material layer by appropriate technical means [for example: focused ion beam machine], and in the 矽(111) crystal plane and the tri-n-nitride material layer A series of heterojunctions are formed between the two.

The foregoing preferred embodiments are merely illustrative of the invention and the technical features thereof, and the techniques of the embodiments can be carried out with various substantial equivalent modifications and/or alternatives; therefore, the scope of the invention is subject to the appended claims. The scope defined by the scope shall prevail.

1. . . Silicon-based solar cell surface

11. . .矽(100) substrate

110. . .矽(111) crystal face

12. . . Group III - nitride material layer

Fig. 1 is a perspective view showing the surface of a germanium-based solar cell having a heterostructure according to a preferred embodiment of the present invention.

Attachment 1: A germanium-based solar cell having a heterostructure according to a preferred embodiment of the present invention and a method of fabricating the same, which are etched on a 矽(111) crystal plane to form a magnified image of a pyramid group structure at a magnification of 5000 times and a side view.

Attachment 2: A germanium-based solar cell having a heterostructure according to a preferred embodiment of the present invention and a method for fabricating the same, wherein a magnified 5,000-fold electronic display of a tri-n-nitride material layer is grown on a pyramid side surface of a ruthenium (111) crystal plane Micro image side view and top view.

Attachment 3: a germanium-based solar cell having a heterostructure according to a preferred embodiment of the present invention and a method for fabricating the same, wherein an electron microscopic image and an electron beam winding of a pyramid side surface and a thin film layer of a ruthenium (111) crystal face are measured Shooting.

1. . . Silicon-based solar cell surface

11. . .矽(100) substrate

110. . .矽(111) crystal face

12. . . Group III - nitride material layer

Claims (10)

A germanium-based solar cell having a heterostructure comprising: a germanium (100) substrate comprising a germanium (111) crystal face, the germanium (111) crystal face being a roughened surface; and a tri-n-nitrogen a material layer that grows a thin film layer on the roughened surface of the germanium (111) crystal plane by using a tri-n-nitride material and forms a heterostructure; wherein the germanium (111) crystal plane and the tri-n-nitride A series of heterojunctions are formed between the layers of material. A germanium-based solar cell having a heterostructure according to claim 1 of the patent application, wherein the germanium (111) crystal mask has a pyramid group structure. The ruthenium-based solar cell having a heterostructure according to the first aspect of the patent application, wherein the roughened surface is formed by an etching process, and the etching process uses a potassium hydroxide solution. A germanium-based solar cell having a heterostructure according to the first aspect of the patent application, wherein the tri-n-nitride material layer has a hexagonal column structure. A germanium-based solar cell having a heterostructure according to claim 1, wherein the tri-nitride material layer is formed of an indium gallium nitride material, and the indium added by the indium gallium nitride material enhances the thin film layer Flatness and quality. A method for fabricating a germanium-based solar cell having a heterostructure comprises: roughening processing on a germanium (100) substrate to form a germanium (111) crystal plane, and the germanium (111) crystal plane is one Roughening a surface; growing a tri-n-nitride material on the germanium (111) crystal plane, and growing a thin film layer on the roughened surface of the germanium (111) crystal plane by using the tri-n-nitride material to form A tri-n-nitride material layer forms a tandem heterojunction between the germanium (111) crystal plane and the tri-n-nitride material layer. A method for fabricating a germanium-based solar cell having a heterostructure according to claim 6 of the patent application, wherein the germanium (111) crystal mask has a pyramid group structure. The method for manufacturing a germanium-based solar cell having a heterostructure according to the sixth aspect of the patent application, wherein the roughened surface is formed by an etching process, and the etching process uses a potassium hydroxide solution. A method for fabricating a germanium-based solar cell having a heterostructure according to claim 6 of the patent application, wherein the tri-n-nitride material layer has a hexagonal column structure. A method for fabricating a germanium-based solar cell having a heterostructure according to claim 6 wherein the tri-nitride material layer is formed of an indium gallium nitride material, and the indium added by the indium gallium nitride material enhances the The flatness and quality of the film layer.