201024207 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種具類似六角星形〔hexagram-like shape或 six-pointed-star-like shape〕之三族-氮〔In_N〕半導體奈米柱構造；特 別疋關於二族-氮半導體奈米柱構造可形成具有各種類似六角星形斷 面。 【先前技術】 φ 目則二族-氮半導體奈米柱〔線〕及其複合材料可應用於各種電 子元件，例如：三族-氮半導體奈米發光二極體〔LED，light emitting diode〕或刀佈布拉格反射鏡〔DBR，distributed Bragg reflector ] ° — 般而吕，分子束磊晶〔molecular beam q^itaxy : MBE〕技術可用於在 -基板上形成三族-氮半導體奈米柱〔線〕。關於分子束蟲晶技術，其 亦揭示於許多各國專利之技術内容。舉例而言，美國專利第6387781 號之 Method of Forming Three_Dimensi()nal Semie(mduetOTS Struetures ’其揭示二維半導體結構之形成方法。該美國專利僅為本發明技術背 ❿ frt參考及說㈤目前技術發展狀態而已’其並非用以限制本發明之範 圍。 例如.關於二族-氮半導體奈米發光二極體，其亦揭示於許多國 内專利之技術内容。舉例而言，中華民國專利公開公報之第2〇〇73 i 563 號、中華民國專利公開公報之第2〇〇42〇492號、中華民國專利公報之 公告第595〇15號及中華民國專利公報之公告第B〇〇"5號揭示相關三 族-氮半導體奈米發光二極體之技術。另外，發明人前巾請巾華民國專 利申請第09謂6〇6叙「三族·氮奈綠構及錢造科」發明專利 案係屬有關三族-氣半導體奈米技術，其揭示之奈米柱結構具有六角形 201024207 斷面，於此併入參考。前述中華民國專利僅為本發日月技術背景之參考 及說明目前技術發展狀態而已，其並_錄制本發明之範圍。 然而’第092108606號之奈米柱結構形成具有六角形斷面並非唯 -的斷面形狀’即奈米柱結構可形成其他形狀的斷面。事實上，在形 成三族_氮半導體奈轉造時’可藉由適當技術手段方式可形成其他斷 面形狀的新奈錄轉’續在產業上提供另-種奈棘結構選擇及 其相關應用技術。201024207 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a tri-n-[In_N] semiconductor nanocolumn having a hexagram-like shape or a six-pointed-star-like shape. Construction; in particular, the formation of a bifamily-nitrogen semiconductor nanocolumn can be formed with various similar hexagonal cross sections. [Prior Art] φ 目 二 - - Nitrogen semiconductor nano column (line) and its composite materials can be applied to various electronic components, such as: tri-n-cell semiconductor light-emitting diode (LED) DBR (distributed Bragg reflector) ° — Lv, molecular beam epitaxy [molecular beam q^itaxy : MBE] technology can be used to form a tri-n-nitrogen semiconductor nanocolumn on the substrate . The molecular beam worm technology is also disclosed in the technical content of many national patents. For example, US Patent No. 6,387,78, Method of Forming Three_Dimensi()nal Semie (mduetOTS Struetures', which discloses a method for forming a two-dimensional semiconductor structure. This U.S. patent is only a reference to the technology of the present invention, frt reference and said (5) current technological development The state of the invention is not intended to limit the scope of the invention. For example, regarding the group-nitrogen semiconductor nano-luminescence diode, it is also disclosed in the technical content of many domestic patents. For example, the Republic of China Patent Publication No. 2, No. 2, No. 563, No. 2, No. 4, 492 of the Republic of China Patent Gazette, No. 595〇15 of the Republic of China Patent Gazette, and Announcement No. 5 of the Republic of China Patent Gazette Revealing the technology of the related tri-n-semiconductor nano-luminescence diode. In addition, the inventor’s front towel, please refer to the patent application of the Republic of China, No. 09, 6〇6, “Tri-family, Ni-nai green structure and money-making” invention patent case It is related to the tri-n-gas semiconductor nanotechnology, and the nano column structure disclosed therein has a hexagonal 201024207 section, which is incorporated herein by reference. The aforementioned Republic of China patent is only the date of the present issue. Reference to the background and description of the current state of the art, which is to record the scope of the invention. However, the nano-pillar structure of No. 092108606 forms a cross-sectional shape having a hexagonal cross-section that is not unique - that is, a nano-pillar structure It can form cross-sections of other shapes. In fact, in the formation of tri-n-nitrogen semiconductors, the new Nai-Ran can be formed by other technical means by means of appropriate technical means. Nasal spine structure selection and related application techniques.
，一有鑑於此’本發明為了滿足上述需求，其提供一種具類似六角星 形之三族·氮半導體奈米柱構造，其可形成具有各種類似六角星形斷面 ’具該六肖咖具核輕化之面積尺寸大小，以達成提供全新 奈米柱形狀結構之目的。 【發明内容】 太”本發明之主要目的係提供—種具類似六角星形之三族氮半導體 各種類㈣星形斷面，成提_ 奈求柱目的’本發私具驗六肖星狀三族·氮半導體 -底部一，tit本體’其係、由薄氮組成，該奈米柱本體之一端具有 ;-•部形成在-基板上’該奈餘本體之另—端具有一頂部 米枉本體之兩度介於20〇奈米至2微米之間； :奈米杈本體具有一斷面’該斷面具有類似六角星形； ，、中該奈米柱本體之斷面寬度係小於約1微米。 本發明較佳實施例之該奈米柱本體之斷面係屬不對稱六角星 6 201024207 形。 本發明較佳實補之該奈雜本體之斷面係屬—面積逐漸變化 斷面。 本發明健實補之縣雜本體之_伽自該絲柱本體 之底部往該奈米柱本體之頂部逐漸變小。 本發明較佳倾狀縣餘本體之_係由自縣米柱本體 之底部往該奈米柱本體之頂部逐漸變大。In view of the above, the present invention provides a three-family nitrogen semiconductor nano-column structure similar to a hexagonal star, which can be formed with various hexagonal-shaped cross sections. The area of the nuclear lightening is dimensioned to achieve the purpose of providing a new nano-pillar shape structure. SUMMARY OF THE INVENTION The main purpose of the present invention is to provide a variety of (four) star-shaped cross-sections of a group of nitrogen semiconductors similar to hexagonal stars, and to achieve the purpose of the column. Group III, nitrogen semiconductor-bottom one, the body of the titer is composed of thin nitrogen, one end of the body of the nano-column has a side portion formed on the substrate, and the other end of the body has a top meter The two sides of the body are between 20 nanometers and 2 micrometers: the nano-body body has a section 'the section has a hexagonal star shape; and the section width of the nano-column body is smaller than Preferably, the section of the nanocolumn body of the preferred embodiment of the present invention is an asymmetrical hexagonal star 6 201024207. The preferred cross-section of the nano-body body is gradually changed. The invention is a kind of sacral body of the county, and the gamma is gradually reduced from the bottom of the body of the wire column to the top of the body of the nano column. The bottom of the body gradually becomes larger toward the top of the body of the nano column.
本發明較佳實施狀該奈絲本體之頂部係屬—近似圓弧狀頂 部。 本發明較佳實施例之該三族·氮係選自氮化鎵、氮化銦、氮化銘 、氮化鎵銦、氮化贿、氮化銘銦、及氮化銘鎵銦所組成 【實施方式】 ，為了充分瞭解本發a月，於下文將例舉較佳實施例並配合所附圖式 作詳細說明，且其並非用以限定本發明。 本發明較佳實補之似六肖星形之三族_財導體 造可應用於光電侧技術躺，例如：三族·氮半導體絲發:二極艘 〔娜〕或分佈柿減賴⑴BR〕，魅制以喊本發明之三 族-氮半導體奈米構造之應用範圍。 '、贫月較佳貫施例之具類似六角星形之三族氣半每 體奈米柱構造之單-個奈米柱之結構形狀示意圖；其中該單一夺料 僅用以表示奈餘本體之基本結構形狀其麟肋限制本购。驾 參照第1圖所示，在-基板1G〔虛線〕上形成-奈米柱本體u。該4 米柱本體11勤三族·氮域，該奈絲讀之-端具有-底部，諮 底部形成在該基板H)上，該奈餘本體u之另—端具有—頂部。本 201024207 發明較佳實施例之該三族遗鱗自氮化鎵、氮化銦、氮化銘、氣化嫁 銦、氮化鋁鎵、氮化鋁銦、及氮化鋁鎵銦所組成之群組。 關於本發明較佳實施例之三族_氮半導體奈米柱構造之製造方法 ’其可參照發明人前申請中華民國專利申請第〇921〇86〇6號之「三族_ 氮奈米結構及其製造方法」發明專利案之技術方法，於此併入參钧 但其並非用以限制本發明。 本發明較佳實施例之鋪似六肖星形之三族_氮半導體奈米柱構 造可應用於製造三族·氮半導體奈米發光二極體；例如：本發明較佳實 ❹ 施例之具類似六肢形可應驗個人另-射請中華賴專利申請 第〇97116441號之「二族_氮半導體奈米構造及其發光二極體」發明專 利案，於此併入參考，但其並非用以限制本發明。 請再參照第1圖所示’該奈米柱本趙11之底部至頂部為該奈米 柱本體11之问度’可形成半導體奈米柱光電元件。本發明較佳實施例 之該奈米柱本體11之高度介於奈米[nm〕至2微米〔仰〕之間 ’並依產品需求選擇調整控制該奈米柱本體u之高度介於200奈米至 0 2微米之間的最佳高度。 請再參照第1圖所示’該奈米柱本體u具有一斷面該斷面具 有類似,、角星形。此時，該奈米柱本體u具有六個星角部η，該六個 星角部12位於該奈米柱本體u之周圍，並形成類似六角星形之斷面 形狀本發明較佳實施例之該奈米柱本體n之斷面寬度係小於約】微 米’即該奈米柱本體之斷面最大寬度係小於約】微米。 附照1揭示本發明較佳實施例之具類似六角星形之三族氣半導 f奈米柱構造之單—個絲柱之上視電子顯微影像，其侧用場發射 掃瞒式電子顯微鏡放大40_倍顯微影像。請參照第i圖及附照i所 201024207 示，該奈雜她丨之斷㈣驗Μ星形，且 完全對稱六角星形，即不對稱六角星形。請參照附照i所示，才: 第1圖之該奈米柱本體n之六個星角部u，附照丨之奈米柱本體之斷 面可明確顯示六個星角部之尖銳端。 附照2揭示本發明較佳實施例之具類似六角星形之三族 體奈米柱構造之單—個奈錄U—上視電子顯歸像，其係利 發射_式電子顯微鏡放大4讓倍酿 ^In a preferred embodiment of the invention, the top of the nanowire body is a nearly arcuate top. In the preferred embodiment of the present invention, the tri-family nitrogen is selected from the group consisting of gallium nitride, indium nitride, nitriding, gallium indium nitride, nitride brittle, nitriding indium, and nitriding indium gallium. The embodiments are described in detail below with reference to the accompanying drawings, and are not intended to limit the invention. The invention is preferably a three-family-like three-family _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The charm system calls for the application range of the tri-nano-semiconductor nanostructure of the invention. ', the poor moon is better than the example of a three-character gas-like half-nano-nano column structure of a single-nano column structure shape; wherein the single material is only used to represent the nai body The basic structural shape of the rib is limited to the purchase. Referring to Fig. 1, a nano column body u is formed on the substrate 1G (dashed line). The 4 m column body 11 has a trisomy nitrogen field, and the nanowire read end has a bottom portion, and a bottom portion is formed on the substrate H), and the other end of the negative body body u has a top portion. The preferred embodiment of the invention is composed of gallium nitride, indium nitride, nitriding, vaporized indium, aluminum gallium nitride, aluminum indium nitride, and aluminum gallium indium nitride. Group. A method for manufacturing a three-family-nitrogen semiconductor nanocolumn structure according to a preferred embodiment of the present invention, which can be referred to the "Triple-N-Nanostructure" of the Chinese Patent Application No. 〇921〇86〇6 The method of manufacture is based on the technical method of the invention patent, and is not intended to limit the invention. The three-membered semiconductor-nano-semiconductor nano-column structure of the preferred embodiment of the present invention can be applied to manufacture a tri-family nitrogen semiconductor nano-light emitting diode; for example, a preferred embodiment of the present invention A patent law similar to the "six-n-nitrogen semiconductor nanostructure and its light-emitting diode" of the Chinese patent application No. 97116441, which is similar to the six-legged shape, is incorporated herein by reference, but it is not It is used to limit the invention. Referring to Fig. 1 again, the bottom of the nano-column Zhao 11 to the top of the column body 11 can form a semiconductor nano-pillar photovoltaic element. In the preferred embodiment of the present invention, the height of the nano-pillar body 11 is between nanometer [nm] and 2 micrometers (upward) and is adjusted according to product requirements. The height of the nano-column body u is between 200 nanometers. The optimum height between meters and 0 2 microns. Please refer to Fig. 1 again. The nanocolumn body u has a section. The broken mask has a similar shape and a star shape. At this time, the nano-pillar body u has six star-corner portions η, which are located around the nano-pillar body u and form a cross-sectional shape similar to a hexagonal star. The width of the section of the nano-column body n is less than about [micrometers], that is, the maximum width of the section of the nano-pillar body is less than about micrometers. Attachment 1 discloses a top-by-wire electron microscopic image of a three-membered gas-trimmed f-nano column structure similar to a hexagonal star in accordance with a preferred embodiment of the present invention, with side-emitting bounce electrons on the side The microscope magnified 40_x microscopic images. Please refer to the i-picture and the attached i. 201024207, which shows that the nap is broken (4) and the star is completely symmetrical, that is, the asymmetrical hexagonal star. Please refer to the attached i for the following: In the first picture, the six star corners of the nano-column body n, the section of the body of the nano-column attached to the 可 can clearly show the sharp ends of the six star-shaped corners. . Attachment 2 discloses a single-nano U-top view electronic display of a three-body nano-column structure similar to a hexagonal star in accordance with a preferred embodiment of the present invention, which is fused to an electron microscope to enlarge 4 Double brewing ^
2所不，該奈米柱本體11之斷面具有類似六角星形。相對於第！圖之、 該奈米柱本體U之六個星角部12，附照2之奈米柱本體 六個星角部之_端。 請參照_ i及2所示，絲雜本體之__討形成具有 各種類似六角星形斷面，如此本發明達成提供全新奈雜形狀結構之 目的。 附照3揭示本發明較佳實施例之具類似六角星形之三族氣 ^奈未柱構造之單—個奈錄之側視電子顯微影像，其係_場發射 知瞄式電子顯微鏡放大倍顯郷像。請參照第丨附昭3所 示，該奈米柱本體U之斷面之頂部寬度標示約㈣奈米，其中間段寬 度標示約255.0奈米。該奈絲本體n之底部傾角為咖度〔: 〕及109.9度〔右側〕。 本發明較佳實施例之該奈米柱本狀斷面制—面積逐漸變化 斷面。睛再參 1圖及_、3所示，本㈣較佳實補之該奈米柱 ，體11之斷面係由自該奈米柱本體^之底雜該奈米柱本體^之頂 逐漸變小’且該奈米柱本體u之斷面之底部寬度必然大於其中間段 寬度及頂部寬度。 八 又 201024207 ,Μ、4揭林個触實侧之具触六肖星形之三族·氮半導 ^^構造之單—個奈米柱之立體側視電子顯微影像，其係利用場 式電子罐做大㈣⑻倍臟雜。請參照第1圖及附照 該'丁、米柱本體11之頂部係屬一近似圓弧狀頂部，其形成在六 角星形斷面上’其直徑小_奈錄本體11之斷面寬度。 、附照5揭示本義較佳實施狀具触六肖星形之三族氮半導 體奈米柱構造之奈米柱群之側視電子顯微影像，其係利用場發射掃晦 式電子顯微鏡放大4G_倍顯微影像1參照第丨圖及,5所示， • 本發·佳實麵之該奈餘本體11之__自縣絲本體η 之底部往該奈米柱本體11之頂部逐漸變大。 刖述較佳實施例僅舉例說明本發明及其技術特徵，該實施例之技 術仍可適當進行各種實質等效修氣/或替換方式予以實施；因此本 發明之權利範圍須視後附申請專利範圍所界定之範圍為準。 201024207 【囷式簡單說明】 第1圖：本發·佳實_之似六肖絲之三族氮半導體 不米柱構造之單—個奈綠之結構形狀示意圖。 附照1:本發明較佳實施例之具類似六角星形之三族氮半 米柱構造個奈錄之上視電子顯微影像。 ,附照2:本發0月較佳實施例之具類似六角星形之三族_氮半導體奈 米柱構造之單—個奈餘之另—上視電子顯微影像。2 No, the section of the nano-pillar body 11 has a hexagonal star shape. Relative to the first! In the figure, the six star corners of the nano-pillar body U are 12, and the nano-column body of the attached two is at the _ end of the six star corners. Referring to _i and 2, the wire body is formed to have various hexagonal-like cross-sections, so that the present invention achieves the purpose of providing a novel nacho-shaped structure. Attachment 3 discloses a side-view electron microscopic image of a single-nano-nano-column with a hexagonal star-like structure, which is a preferred embodiment of the present invention, which is a field emission electron microscope magnification Obvious image. Please refer to the attached figure 3, the top width of the section of the nano-pillar body U is about (four) nanometers, and the width of the middle section is about 255.0 nanometers. The bottom inclination angle of the nanowire body n is ca: [:] and 109.9 degrees [right side]. In the preferred embodiment of the present invention, the nano-column section is gradually changed in area. The eye is again shown in Figure 1 and _, 3, the (4) is better to compensate the nano-column, the section of the body 11 is gradually from the top of the nano-column body ^ It becomes smaller and the bottom width of the section of the nano-pillar body u is necessarily greater than the width of the middle section and the width of the top. Eight and 201024207, Μ, 4 Jielin, the touch-side side of the three-membered three-six-star, nitrogen semi-conducting ^^ structure of a single-dimensional nano-stereoscopic electron microscopic image, its utilization field The type of electronic can is large (four) (8) times dirty. Please refer to Fig. 1 and the attached picture. The top of the 'Ten, rice column body 11 is an approximately arc-shaped top portion, which is formed on the hexagonal star-shaped section, and its diameter is small. , Attachment 5 reveals a side view electron microscopy image of a nano column group of a three-group nitrogen semiconductor nanocolumn structure with a six-dimensional star-shaped structure, which is a preferred embodiment, which uses a field emission bounce electron microscope to amplify 4G. _ magnification microscopic image 1 refers to the first diagram and 5, and the narrative body 11 of the present invention has gradually changed from the bottom of the county wire body η to the top of the nano column body 11 Big. The preferred embodiments are merely illustrative of the invention and its technical features, and the techniques of the embodiments can be implemented in various substantially equivalent air-conditionings or alternatives; therefore, the scope of the invention is dependent on the appended patent application. The scope defined by the scope shall prevail. 201024207 [Simple description of the 囷 type] Figure 1: This is a three-family nitrogen semiconductor of the six-dimensional sinus. Attachment 1: A top view of a preferred embodiment of the present invention is a three-dimensional nitrogen half-meter column similar to a hexagonal star. , Attachment 2: The preferred embodiment of the present invention is a three-family-like nitrogen-like semiconductor column structure of the preferred embodiment of the present invention.
,附照3:本發明較佳實施例之具類似六角星形之三族_1半導體奈 米柱構造之單一個奈米柱之侧視電子顯微影像。 附照4:本發明較佳實施例之具類似六角星形之三族-氮半導體奈 米柱構造之單一個奈米柱之立體側視電子顯微影像。 附照5:本發明較佳實施例之具類似六角星形之三族_氮半導體卉 米柱構造之奈米柱群之側視電子顯微影像。 X' 【主要元件符號說明】 10基板 11奈米柱本體 12星角部 11, Attachment 3: A side electron microscopic image of a single nanocolumn having a hexagonal-like three-group-1 semiconductor nanocolumn structure in accordance with a preferred embodiment of the present invention. Attachment 4: A stereoscopic side electron micrograph of a single nanocolumn having a hexagonal-like tri-n-cell semiconductor nanocolumn structure in accordance with a preferred embodiment of the present invention. Attachment 5: A side view electron microscopic image of a nano-pillar group similar to a hexagram of a preferred embodiment of the present invention. X' [Main component symbol description] 10 substrate 11 nm column body 12 star corner 11