TWI406938B - Chemical solution, and method of processing substrate through the use of the same - Google Patents

Abstract

A chemical solution for at least removing an arrestment layer formed on the surface of an organic film pattern formed on the underlay, the arrestment layer is composed of at least one of a deterioration layer formed by deterioration of surface of the organic film pattern and a deposition layer formed by deposits depositing on the surface of the organic film pattern. The chemical solution is composed of water solution containing a first component and a second component, the first component is composed of at least one of the hydroxylamine derivatives and hydrazine derivatives, the second component has obvious function.

Description

Chemical solution and method of treating substrate using the same

The present invention relates to a method of processing a substrate such as a semiconductor substrate and a liquid crystal substrate, and a chemical solution used in the method.

The wire loop is usually produced, for example, by forming an organic thin film pattern on a semiconductor wafer or a substrate such as a liquid crystal display substrate (LCD) or other substrate, and then etching the thin film under the organic thin film pattern, that is, the substrate having the organic thin film pattern. It is used as a mask to form a pattern on the film below.

After the lower film is patterned, the organic film pattern is removed.

For example, Japanese Patent No. 8-23103 (published in January 1996) discloses a method of processing a substrate for manufacturing a wire loop having a high dielectric breakdown resistance, comprising forming an organic thin film pattern on a substrate (referred to as an anti-patent in a patent document) Etching pattern), using an organic film pattern as a mask to etch a film (single layer or double layer) disposed under the organic film pattern, forming a pattern on the underlying film, and then developing the organic film pattern, and then over-developing or The organic thin film pattern which is formed into a new pattern is a photomask to form a pattern such as a tapered shape or a step shape on the lower film, and after the pattern is formed again on the lower film, the organic film pattern is removed in another step.

A method of processing a substrate, comprising the step of treating an organic thin film pattern similar to the above method, is disclosed in Japanese Patent No. 2005-159294.

Japanese Patent No. 2005-159292 discloses a method of treating an organic thin film pattern, and additionally includes the steps of mixing and deforming the organic thin film pattern, In the step of mixing and deforming the organic thin film pattern, the organic thin film pattern (particularly, the positive resistive pattern) is mixed by contacting with an organic solvent, covering (specifically, the organic thin film pattern is exposed to an environment in which a gaseous solvent is formed).

Fig. 6 is a view showing a method of processing a substrate disclosed in the above Japanese Patent No. 8-23103, which comprises forming an organic thin film pattern, patterning the underlying film by etching, redeveloping the organic thin film pattern (resist pattern), and further underlying The film constitutes a pattern.

First, as shown in Fig. 6(A), a conductive film 102 is formed on a substrate 101, and then an organic film 103 (referred to as "photoresist film" in a patent document) is formed on the conductive film 102.

Then, the exposure step, the development step, and the pre-baking heating step are sequentially performed to convert the organic film into the starting organic film pattern 104 as shown in Fig. 6(B).

Next, the conductive film 102 is etched on the substrate 101 by using the organic film pattern 104 as a mask, and the conductive film 102 is formed into a first pattern as shown in FIG. 6(C).

After the organic thin film pattern 104 is redeveloped, the second pre-baking step of heating the organic thin film pattern 104 is performed, and the organic thin film pattern 104 is formed into a second pattern as shown in FIG. 6(D).

Then, the conductive film 102 is etched by the re-formed organic film pattern 104 to reduce the thickness of the conductive film 102 to half of the initial thickness, as shown in FIG. 6(E). Thus, the conductive film 102 has a step shape. The cross-sectional pattern, therefore, the conductive film 102 does not have a vertically distributed cross-sectional pattern or an inverted tapered cross-sectional pattern.

Next, as shown in Fig. 6(F), the organic thin film pattern 104 is removed.

However, Japanese Patent No. 8-23103 does not mention the step of etching the electroconductive thin film 102 on the substrate 101 (steps between the steps shown in Fig. 6(B) and the steps shown in Fig. 6(C). The initial organic thin film pattern is damaged, thereby forming a deformed layer and/or a deposited layer on the organic thin film pattern 104.

The deformed layer and/or the deposited layer (hereinafter referred to as "barrier layer") formed on the organic thin film pattern suppresses the second development of the organic thin film pattern 104, that is, as shown in FIG. 6(C) The development step performed between the step and the step shown in Fig. 6(D), therefore, the second development of the organic thin film pattern 104 is generally not completed smoothly.

The degree of second development of the organic film pattern 104 depends on the state of the barrier layer.

If the etching step performed between the step shown in FIG. 6(B) and the step shown in FIG. 6(C) is wet etching, the temperature of the chemical solution used during wet etching and the wet etching is greatly increased. Affect the state of the barrier layer.

In other words, if the etching step performed between the step shown in FIG. 6(B) and the step shown in FIG. 6(C) is dry etching, the type of gas used in the dry etching and the dry etching are performed. The pressure and the discharge process of the generated gas greatly affect the state of the barrier layer. The chemical damage of the organic thin film pattern depends on the gas species, and the physical impact of the organic thin film pattern caused by ionization or free radical gas is mostly determined. The pressure during the dry etching and the discharge process of the generated gas, usually, the wet etching does not cause physical impact on the organic thin film pattern, so the organic thin film pattern is formed by wet etching. The damage is less than dry etching, and the barrier layer inhibits the development of the organic thin film pattern, which is also less wet etching than dry etching.

If the re-development of the organic thin film pattern cannot be smoothly performed due to the barrier layer, the second development (overexpansion) of the organic thin film pattern will be uneven, and the problem that the reconstituted pattern of the underlying film is uneven will occur.

In view of the above problems, the present invention discloses a method of standard processing a substrate whereby the development process of the second or subsequent organic film pattern can be smoothly completed.

The invention also discloses an organic solution for use in the above process.

After forming an organic thin film pattern on a semiconductor substrate, a liquid crystal display substrate or other substrate, and after processing the organic thin film pattern, the organic thin film pattern can be directly used without processing the underlying thin film disposed under the organic thin film pattern, for example, when the organic thin film pattern is When composed of an insulating material, the organic thin film pattern can be used as an insulating film pattern.

The first part of the present invention discloses a chemical solution for removing a barrier layer formed on at least a surface of an organic thin film pattern formed on a substrate, the barrier layer including at least a deformed layer formed by a surface change of the organic thin film pattern, and deposited on the organic matter with the deposit One of the deposited layers formed on the surface of the film pattern, the chemical solution comprising an aqueous solution of a first component having at least one of a hydroxylamine derivative and an anthracene derivative, and a second component having a developing function.

A method of fabricating an organic thin film pattern using a chemical solution, the method comprising: sequentially removing at least an organic thin film pattern formed on a substrate a step of removing the barrier layer on the surface, and a main step of processing the organic thin film pattern, the barrier layer comprising at least one of a deformed layer formed by a surface change of the organic thin film pattern and one of a deposited layer formed by depositing a deposit on the surface of the organic thin film pattern, The chemical solution is used in a removal step, and the chemical solution contains an aqueous solution of a first component having at least one of a hydroxylamine derivative and an anthracene derivative, and a second component having a developing function.

A second part of the present invention discloses a method of processing a substrate, comprising: forming an organic thin film pattern on a substrate, and removing at least a barrier layer formed on a surface of the organic thin film pattern, the barrier layer including at least a deformed layer formed by a surface change of the organic thin film pattern And one of the deposited layers formed by depositing the deposit on the surface of the organic thin film pattern, and at least removing the barrier layer is the chemical solution described above.

A method of processing a substrate, comprising: a first step of forming an organic thin film pattern on the substrate, a removal step of removing at least the barrier layer formed on the surface of the organic thin film pattern, and a main step of processing the organic thin film pattern, and blocking The layer includes at least one of a deformed layer formed by a surface change of the organic thin film pattern and a deposited layer formed by depositing a deposit on the surface of the organic thin film pattern, and at least the barrier layer is removed by using the chemical solution described above.

A third aspect of the invention discloses a method of fabricating an element having a substrate comprising performing the above method of processing a substrate to fabricate one of a display element having a substrate and a semiconductor element having a substrate.

The above and other objects, features, and advantages of the present invention will become more apparent and understood.

Embodiments in accordance with the present invention will be described below in conjunction with the drawings.

[First Embodiment]

In the first embodiment, FIG. 1 illustrates a state in which individual steps are performed in the method of processing a substrate.

The method shown in Fig. 6 is a second development step (overexposure) performed between the step shown in Fig. 6(C) and the step shown in Fig. 6(D), the method of the first embodiment Unlike the method shown in Fig. 6, the removal step and the second development step are both performed between the steps shown in Fig. 1(C) and the steps shown in Fig. 1(D).

First, as shown in Fig. 1(A), a conductive film 2 is formed on a substrate 1, and then an organic film 3 is formed on the conductive film 2.

Next, an exposure step, a development step, and a pre-baking heating step are sequentially performed on the organic film 3 to form an organic thin film 3 on the organic thin film 3 to form the starting organic thin film pattern 4, as shown in FIG. 1(B). Show.

Then, the conductive film 2 is formed on the substrate 1 by using the starting organic film pattern 4 as a mask, and the conductive film 2 is formed into a first pattern, as shown in FIG. 1(C), specifically, the conductive film 2 The portion not covered by the organic thin film pattern 4 is removed by wet or dry etching, and the conductive film 2 is formed into a pattern as shown in Fig. 1(C).

As a result of forming the pattern of the electroconductive thin film 2, a barrier layer is formed on the surface of the organic thin film pattern 4, the barrier layer includes at least a deformed layer formed by the surface change of the organic thin film pattern 4, and deposits are deposited on the surface of the organic thin film pattern 4 to form One of the sedimentary layers.

Then, the removing step is completed in the organic thin film pattern 4 by using the chemical solution of the first embodiment to selectively remove the barrier layer, so that the region of the organic thin film pattern 4 without the barrier layer is present, and then the second is performed on the organic thin film pattern 4. The developing step and the heating step as the second pre-baking step, that is, the main step is performed on the organic film pattern 4 to convert the starting organic film pattern 4 into an organic film pattern 5 having a new appearance (pattern), such as Figure 1(D) shows. In other words, the organic thin film pattern 4 is processed to convert the organic thin film pattern 4 into the new organic thin film pattern 5, and the area of the organic thin film pattern 4 on the conductive thin film 2 also becomes small.

As described above, the partial organic thin film pattern 4 is removed in the main step, that is, the organic thin film pattern 4 is entirely reduced.

Then, the conductive film 2 is wet or dry etched with the organic thin film pattern 5 as a mask to thin the portion of the conductive film 2 not covered by the organic thin film pattern 5, as shown in FIG. 1(E), for example, conductive The thickness of the film 2 after etching is half of the original, and the obtained conductive film 2 has a stepped pattern as a step.

Next, as shown in Fig. 1(F), the organic thin film pattern 5 is removed.

Since the electroconductive thin film 2 has a stepped shape as a step, the electroconductive thin film 2 does not have a vertically distributed cross-sectional pattern or an inverted tapered cross-sectional pattern.

The chemical solution used in the removal step will be explained below.

The chemical solution used in the removing step of the first embodiment comprises an aqueous solution of a first component having at least one of a hydroxylamine derivative and an anthracene derivative, and a second component having a developing function.

The hydroxylamine derivative contained in the chemical solution in the first embodiment is [(R ₁ -)(R ₂ -)]NOH, wherein each of R ₁ and R ₂ is a C1 to C4 alkyl group or a hydroxyalkyl group, respectively. Preferably, the hydroxylamine derivative is at least one of a hydroxylamine and an N,N-diethylhydroxylamine.

The anthracene derivative contained in the chemical solution in the first embodiment is [(R ₁ -)(R ₂ -)]NN[(-R ₃ )(-R ₄ )], wherein each R ₁ , R ₂ , R ₃ and R ₄ are each a hydrogen atom, a methyl group, an ethyl group and a phenyl group, and the anthracene derivative is preferably at least one of hydrazine, methyl hydrazine, 1,1-dimethylhydrazine and phenyl hydrazine.

The second component contained in the chemical solution in the first embodiment preferably contains at least one of tetraalkylammonium hydroxide, alkali metal hydroxide and alkali metal carbonate.

The tetraalkylammonium hydroxide defined in the second component is [(R ₁ -)(R ₂ -)(R ₃ -)(R ₄ -)]N ⁺ OH ^- wherein each R ₁ , R ₂ , R ₃ and R ₄ are each a C1 to C4 alkyl or hydroxyalkyl group, and the tetraalkylammonium hydroxide is preferably at least tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline and dimethyl carbonate. One of the bis(2-hydroxyethyl)ammonium.

The alkali metal hydroxide defined in the second component is preferably at least one of sodium hydroxide and potassium hydroxide.

The alkali metal carbonate as defined in the second component is preferably at least one of sodium carbonate, sodium hydrogencarbonate, potassium carbonate and potassium hydrogencarbonate.

The content of the first component in the chemical solution in the first embodiment is preferably in the range of 0.5 to 30% by weight, and if the content of the first component in the chemical solution is X% by weight, and X is less than 0.5, Or Y% by weight, and Y is greater than 30, in addition to the deformation layer, some of the organic film pattern is also removed.

The content of the second component in the chemical solution in the first embodiment is preferably In the range of 0.2 to 10% by weight, if the content of the second component in the chemical solution is X% by weight, and X is less than 0.2, the chemical solution cannot be removed from the barrier layer formed on the surface of the organic film pattern, and if The content of the second component in the chemical solution is Y% by weight, and when Y is greater than 10, part of the organic film pattern is removed in addition to the deformed layer.

For example, in the chemical solution of the first embodiment, the hydroxylamine derivative preferably contains at least [(R ₁ -)(R ₂ -)]NOH, wherein each of R ₁ and R ₂ is a C1 to C4 alkyl group, respectively. Or one of a hydroxyalkyl group, a hydroxylamine and one of N,N-diethylhydroxylamine, and the anthracene derivative preferably contains at least [(R ₁ -)(R ₂ -)]NN[(-R ₃ )(-R ₄ Wherein each of R ₁ , R ₂ , R ₃ and R ₄ is a hydrogen atom, one of a methyl group, an ethyl group and a phenyl group, an anthracene, a methyl anthracene, a 1,1-dimethylhydrazine and a phenyl group; One of the defects, and the content of the first component in the chemical solution is preferably in the range of 0.5 to 30% by weight.

For example, in the chemical solution of the first embodiment, the second component preferably contains at least one of tetraalkylammonium hydroxide, alkali metal hydroxide and alkali metal carbonate, and tetraalkylammonium hydroxide is [(R ₁ -) (R ₂ -)(R ₃ -)(R ₄ -)]N ⁺ OH ^- wherein each of R ₁ , R ₂ , R ₃ and R ₄ is independently a C1 to C4 alkyl or hydroxyalkyl group, or at least Containing tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline and dimethylbis(2-hydroxyethyl)ammonium hydroxide, the alkali metal hydroxide contains at least one of sodium hydroxide and potassium hydroxide The alkali metal carbonate contains at least one of sodium carbonate, sodium hydrogencarbonate, potassium carbonate and potassium hydrogencarbonate, and the content of the second component in the chemical solution is preferably in the range of 0.2 to 10% by weight.

For example, in the chemical solution of the first embodiment, it is preferred that the hydroxylamine derivative contains at least [(R ₁ -)(R ₂ -)]NOH, wherein each of R ₁ and R ₂ is C1 to C4, respectively. One of an alkyl or hydroxyalkyl group, a hydroxylamine and one of N,N-diethylhydroxylamine, the anthracene derivative containing at least [(R ₁ -)(R ₂ -)]NN[(-R ₃ )(-R ₄ )], wherein each of R ₁ , R ₂ , R ₃ and R ₄ is a hydrogen atom, one of a methyl group, an ethyl group and a phenyl group, hydrazine, methyl hydrazine, 1,1-dimethyl hydrazine and benzene One of the bases, the content of the hydroxylamine derivative and/or the anthracene derivative in the chemical solution is preferably in the range of 0.5 to 30% by weight, and the second component contains at least tetraalkylammonium hydroxide and alkali hydroxide. One of a metal and an alkali metal carbonate, tetraalkylammonium hydroxide is [(R ₁ -)(R ₂ -)(R ₃ -)(R ₄ -)]N ⁺ OH ^- , wherein each R ₁ , R ₂ And R ₃ and R ₄ are each a C1 to C4 alkyl or hydroxyalkyl group, or at least tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline, and dimethyl bis(2-hydroxyl) One of the ammonium, the alkali metal hydroxide contains at least one of sodium hydroxide and potassium hydroxide, and the alkali metal carbonate contains at least carbon Sodium Content bicarbonate, potassium carbonate, potassium bicarbonate and one, and a chemical solution of the second component is preferably within a range from 0.2 to 10% by weight range.

In the chemical solution of the first embodiment, the portion of the organic thin film pattern other than the deformed layer is preferably mixed at a speed of less than or equal to 1000 Å per minute, preferably less than or equal to 100 Å per minute, particularly less than or equal to each. The speed of 50 Å is the best. At the set speed, after the removal step is completed, the residual amount of the organic thin film pattern 4 is sufficient for patterning on the organic thin film pattern 4.

In the chemical solution of the first embodiment, the ratio of V1/V2 is preferably greater than or equal to 0.5, wherein V1 is the mixing speed of the deformed layer (or barrier layer), and V2 is the portion of the organic thin film pattern other than the deformed layer. Mixing speed For example, the ratio of V1/V2 is less than or equal to 1000, and the ratio of V1/V2 is preferably less than or equal to 5.0.

In the chemical solution of the first embodiment, the ratio of V1/V2 is preferably greater than or equal to 0.5 (for example, less than or equal to 1000), wherein V1 is the mixing speed of the deformed layer (or barrier layer), and V2 is an organic film. The mixing speed of the pattern other than the portion of the deformed layer, and the mixing speed of the organic film pattern except for the portion of the deformed layer is less than or equal to 1000 Å per minute.

In the chemical solution of the first embodiment, the ratio of V1/V2 is preferably greater than or equal to 0.5 (for example, less than or equal to 1000), and the mixing speed of the organic thin film pattern except for the portion of the deformed layer is less than or equal to 100 Å per minute. .

In the chemical solution of the first embodiment, the ratio of V1/V2 is preferably greater than or equal to 0.5 (for example, less than or equal to 1000), and the mixing speed of the organic thin film pattern except for the portion of the deformed layer is less than or equal to 50 Å per minute. .

The chemical solution of the first embodiment preferably has the function of developing the organic thin film pattern 4.

The tetraalkylammonium hydroxide in the chemical solution of the first embodiment preferably contains a component having a function of developing the organic thin film pattern 4.

The barrier layer formed on the surface of the organic thin film pattern 4 at the stage shown in Fig. 1(C) will be described below.

The barrier layer prevents the organic thin film pattern 4 from being redeveloped (overexposure). As described above, the barrier layer includes at least a deformed layer formed by the surface change of the organic thin film pattern 4, and a deposit formed by deposition of the deposit on the surface of the organic thin film pattern 4. One of the layers.

If the barrier layer comprises a deformed layer, the deformed layer includes at least One of the surface deformation of the organic thin film pattern 4 caused by oxidation and thermal hardening, the surface deformation of the organic thin film pattern 4 caused by wet etching, or the surface deformation of the organic thin film pattern 4 caused by dry etching or ashing, if the barrier layer includes a deposited layer The deposited layer is deposited by depositing dry etching deposits on the surface of the organic thin film pattern 4.

In the first embodiment described above, the removing step causes the second component to more easily penetrate into the organic film pattern 4 when the second developing (overexposure) step of the main step is performed, ensuring uniformity of development effect.

When the main step is carried out on the organic thin film pattern 4 without using a developing function but having a chemical solution for removing the mixed organic thin film pattern 4, the above-mentioned advantages are also obtained.

[Second embodiment]

In the second embodiment, FIG. 2 illustrates the state in which the individual steps are completed in the method of processing the substrate.

In the second embodiment, the starting organic film pattern 4 is formed by lithography, so that some portions have a plurality of (for example, two) thicknesses.

First, as shown in Fig. 2(A), a conductive film 2 is formed on a substrate 1, and then an organic film 3 is formed on the conductive film 2.

Next, two or more exposure steps, a development step, and a pre-baking heating step are sequentially performed on the organic film 3 to pattern the organic film 3 to change the organic film 3 into a partial organic film pattern having two thicknesses in a partial region. 4. As shown in Figure 2(B).

For example, as shown in FIG. 2(B), the organic film pattern 4 includes a central portion, and both edge portions surrounding the central portion, and the thickness thereof is smaller than the central portion. The thickness of the points.

For example, the exposure step may perform the organic film 3 twice under different exposure levels, allowing light to pass through the halftone mask having two or more light transmittance film patterns, or passing the light through the original pattern and having light transmittance. A gray dimming mask of a fine pattern smaller than or equal to the upper limit of the exposure amount is used to expose the organic film 3.

Then, the conductive film 2 is formed on the substrate 1 by using the starting organic film pattern 4 as a mask, and the conductive film 2 is formed into a first pattern, as shown in FIG. 2(C), specifically, the conductive film 2 The portion not covered by the organic thin film pattern 4 is removed by wet or dry etching to form the conductive film 2 into a pattern as shown in Fig. 2(C).

As a result of forming the pattern of the electroconductive thin film 2, a barrier layer is formed on the surface of the organic thin film pattern 4, the barrier layer includes at least a deformed layer formed by the surface change of the organic thin film pattern 4, and deposits are deposited on the surface of the organic thin film pattern 4 to form One of the sedimentary layers.

Then, the removing step is performed on the organic thin film pattern 4 by using the chemical solution of the first embodiment to selectively remove the barrier layer, so that the region of the organic thin film pattern 4 without the barrier layer is present, and then the organic thin film pattern 4 is subjected to the first step. a second development step and a heating step as a second pre-baking step, that is, the main step is performed on the organic thin film pattern 4 to convert the starting organic thin film pattern 4 into an organic thin film pattern 5 having a new appearance (pattern), As shown in Fig. 2(D), in particular, the edge portion of the organic thin film pattern 4 having a thickness smaller than that of the central portion is removed, so that the organic thin film pattern 5 has a single thickness.

As described above, for example, part of the organic thin film pattern 4 is shifted in the main step Except, and the partial organic thin film pattern 4 is removed to make the organic thin film pattern 4 small.

Then, the conductive film 2 is wet or dry etched by using the organic film pattern 5 as a mask to make the portion of the conductive film 2 not covered by the organic film pattern 5 thin and have a single thickness, as shown in FIG. 2(E). The obtained electroconductive thin film 2 has a sectional shape as a step.

Next, as shown in the second (F) diagram, the organic thin film pattern 5 is removed.

Since the electroconductive thin film 2 has a stepped shape as a step, the electroconductive thin film 2 does not have a vertically distributed cross-sectional pattern or an inverted tapered cross-sectional pattern.

The second embodiment has the same advantages as those disclosed in the first embodiment.

[Third embodiment]

In the third embodiment, FIG. 3 illustrates the state in which the individual steps are completed in the method of processing the substrate.

In the third embodiment, the starting organic film pattern 4 is formed by lithography, and therefore, similar to the second embodiment, some portions have various (for example, two) thicknesses.

First, as shown in Fig. 3(A), a semiconductor thin film 6 is formed on a substrate 1, and then a conductive thin film 2 is formed on the semiconductor thin film 6, and an organic thin film 3 is formed on the electroconductive thin film 2.

Next, two or more exposure steps, a development step, and a pre-baking heating step are sequentially performed on the organic film 3 to pattern the organic film 3 to change the organic film 3 into a partial organic film pattern having two thicknesses in a partial region. 4. As shown in Figure 3(B).

For example, as shown in FIG. 3(B), the organic thin film pattern 4 includes a central portion And the two edge portions surrounding the central portion, and the thickness thereof is greater than the thickness of the central portion.

For example, the exposure step may perform the organic film 3 twice under different exposure levels, allowing light to pass through the halftone mask having two or more light transmittance film patterns, or passing the light through the original pattern and having light transmittance. A gray dimming mask of a fine pattern smaller than or equal to the upper limit of the exposure amount is used to expose the organic film 3.

Then, the conductive film 2 and the semiconductor film 6 formed on the substrate 1 are wet or dry etched by using the starting organic film pattern 4 as a mask, and the conductive film 2 and the semiconductor film 6 are made into a first pattern, as in the third (C). As shown in the figure, specifically, wet or dry etching removes portions of the electroconductive thin film 2 and the semiconductor thin film 6 which are not covered by the organic thin film pattern 4.

The conductive film 2 is wet or dry etched, and the semiconductor film 6 is dry etched after etching the conductive film 2.

As a result of forming the pattern of the electroconductive thin film 2 and the semiconductor thin film 6, a barrier layer is formed on the surface of the organic thin film pattern 4, the barrier layer includes at least a deformed layer formed by the surface change of the organic thin film pattern 4, and deposits are deposited on the organic thin film pattern. 4 One of the deposited layers formed on the surface.

Then, the removing step is performed on the organic thin film pattern 4 by using the chemical solution of the first embodiment to selectively remove the barrier layer, so that the region of the organic thin film pattern 4 without the barrier layer is present, and then the organic thin film pattern 4 is subjected to the first step. a second development step and a heating step as a second pre-baking step, that is, the main step is performed on the organic thin film pattern 4 to convert the starting organic thin film pattern 4 into an organic thin film pattern 5 having a new appearance (pattern), Such as the first As shown in Fig. 3(D), in particular, the central portion of the organic thin film pattern 4 having a thickness smaller than that of the edge portion is removed, so that the formed organic thin film pattern 5 has two regions which are separated from each other and have the same thickness.

As described above, for example, part of the organic thin film pattern 4 is removed in the main step, and the organic thin film pattern 4 is made small by the partial organic thin film pattern 4 being removed. In the third embodiment, the above-described partial organic thin film pattern 4 is removed. The steps are the "selection steps" defined in the scope of the patent application.

Then, the conductive film 2 is etched (wet or dry etched) for a second time by using the organic thin film pattern 5 of a single thickness as a mask to remove the portion of the conductive film 2 that is not covered by the organic thin film pattern 5, thereby obtaining The electroconductive thin film 2 of the two separated regions is as shown in Fig. 3(E).

As a result, the patterns of the conductive film 2 and the semiconductor film 6 are different, as shown in FIG. 3(E).

Next, as shown in Fig. 3(F), the organic thin film pattern 5 is removed.

The third embodiment is applicable to a method of manufacturing a source, a drain, a wire, and a TFT (Thin Film Transistor) substrate circuit, wherein the semiconductor film 6 is made of n+ a-Si (high-strength semiconductor for ohmic contact) or a-Si (non- Crystal 矽) composition.

The second embodiment has the same advantages as the first embodiment in fabricating a source, drain, wire and TFT (thin film transistor) substrate circuit in which the semiconductor film 6 is made of n+ a-Si or a-Si ( Amorphous 矽).

[Fourth embodiment]

In the fourth embodiment, FIG. 4 illustrates a state in which individual steps are performed in the method of processing a substrate.

In the fourth embodiment, the initial organic film pattern is formed by lithography. 4. Therefore, similar to the second and third embodiments, some portions have a plurality of (for example, two) thicknesses.

First, as shown in Fig. 4(A), a semiconductor thin film 6 is formed on a substrate 1, and then a conductive thin film 2 is formed on the semiconductor thin film 6, and an organic thin film 3 is formed on the electroconductive thin film 2.

Next, two or more exposure steps, a development step, and a pre-baking heating step are sequentially performed on the organic film 3 to pattern the organic film 3 to change the organic film 3 into an organic film pattern 4 having two separated portions, wherein Each of the two separated portions has two thicknesses as shown in Fig. 4(B).

For example, as shown in FIG. 4(B), the organic thin film pattern 4 has two adjacent portions, and each portion has a first block adjacent to the other portion, and a second block away from the other portion, and the second block The thickness is smaller than the first block.

For example, the exposure step may perform the organic film 3 twice under different exposure levels, allowing light to pass through the halftone mask having two or more light transmittance film patterns, or passing the light through the original pattern and having light transmittance. A gray dimming mask of a fine pattern smaller than or equal to the upper limit of the exposure amount is used to expose the organic film 3.

Then, the conductive film 2 is wet or dry etched on the substrate 1 by using the starting organic film pattern 4 as a mask, and the conductive film 2 is formed into a first pattern, as shown in FIG. 4(C), specifically, The portion of the electroconductive thin film 2 that is not covered by the organic thin film pattern 4 is removed as shown in Fig. 4(C).

As a result of forming the pattern of the electroconductive thin film 2, a barrier layer is formed on the surface of the organic thin film pattern 4, and the barrier layer includes at least the surface of the organic thin film pattern 4 The deformed layer formed by the change, and one of the deposited layers formed by depositing the deposit on the surface of the organic thin film pattern 4.

Then, the removing step is performed on the organic thin film pattern 4 by using the chemical solution of the first embodiment to selectively remove the barrier layer, so that the region of the organic thin film pattern 4 without the barrier layer is present, and then the organic thin film pattern 4 is subjected to the first step. a second development step and a heating step as a second pre-baking step, that is, the main step is performed on the organic thin film pattern 4 to convert the starting organic thin film pattern 4 into an organic thin film pattern 5 having a new appearance (pattern), As shown in FIG. 4(D), in particular, the second block of the two portions in each of the organic thin film patterns 4, such that the organic thin film pattern 4 is converted into an organic thin film pattern having a single thickness, such as the fourth (D) is shown in the figure.

As described above, for example, part of the organic thin film pattern 4 is removed in the main step, and the organic thin film pattern 4 is made small by the partial organic thin film pattern 4 being removed. In the third embodiment, the above-described partial organic thin film pattern 4 is removed. The steps are the "selection steps" defined in the scope of the patent application.

Since the reflow solder has a single thickness of the organic thin film pattern 5, the portions defined in the two organic thin film patterns 5 are connected to each other to form a new organic thin film pattern 7, as shown in FIG. 4(E), and thus exposed to the conductive thin film 2 The semiconductor film 6 region between the two portions is covered by the organic film pattern 7.

The organic thin film pattern 5 can be reflowed by heating the organic thin film pattern 5 or exposing the organic thin film pattern 5 to an organic solvent vapor.

Then, the semiconductor film 6 is dry etched by using the organic thin film pattern 7 and the conductive film 2 as a mask to make the pattern (single pattern) of the semiconductor film 6 different from the pattern of the conductive film 2 (ie, the two portions are separated from each other), as in the fourth (E) map Shown.

Next, as shown in Fig. 4(F), the organic thin film pattern 7 is removed.

The fourth embodiment has the same advantages as those disclosed in the third embodiment.

In the above embodiment, in order to overexpose the organic thin film pattern, it is necessary to prevent the organic thin film pattern from being damaged by heat, and the organic thin film pattern is maintained in a developing function for all steps performed before the second development, such as a drying step or The etching step, specifically, it is necessary to maintain the organic thin film pattern in a state of 150 ° C or less, because the organic thin film pattern is liable to cause cross-linking at a temperature of 150 ° C or higher, and it is preferable to maintain the organic thin film pattern at 140 ° C or Lower temperature state.

If the organic thin film pattern is composed of a material which easily causes a cross-linking phenomenon at a temperature different from 150 ° C, it is necessary to maintain the organic thin film pattern in a state lower than that temperature.

Initially, the organic thin film pattern 4 is formed on the substrate 1 by lithography or printing.

Preferably, the organic thin film pattern 4 is formed of a photosensitive organic film, wherein the photosensitive organic film is a positive photosensitive organic film or a negative photosensitive organic film.

If the organic thin film pattern 4 is composed of a positive photosensitive organic film, the phenol resin is preferably a main component of the organic thin film pattern 4.

The photosensitive organic film is preferably soluble in alkali if exposed to light.

The chemical solution used in the fourth embodiment is applicable not only to the above removal step but also to removing all of the organic thin film patterns 4 formed on the substrate 1. The organic thin film pattern 4 formed on the substrate 1 is preferably photosensitive. The film is removed, and at least after the organic film pattern 4 is exposed to light, a chemical solution is used to perform the removing step.

After the main step is performed after the removing step, the organic thin film pattern 4 formed on the substrate 1 can be completely removed.

The chemical solution used in the main step preferably has the function of developing the organic thin film pattern 4, but the stripping agent can be used as the chemical solution used in the main step.

The main step may include the step of at least partially reducing the organic film pattern 4.

An example of the chemical solution employed in the removal step of each of the above embodiments will be described below.

The chemical solution described below is used not only in the method of the above embodiment but also in any method of processing a substrate.

In the example mentioned later, the difficulty in removing the barrier layer formed on the surface of the organic thin film pattern 4 and the residual characteristics of the organic thin film pattern 4 except the partially deformed layer can be known from the following description. The best example of the chemical solution used.

First, an etchant containing 7% ammonium nitrate, 18% ammonium cerium nitrate, and 75% water was prepared.

A glass substrate was used as the substrate 1, and a chromium film as the electroconductive thin film 2 was formed thereon to have a thickness of 200 nm.

An organic thin film 3 (phenolic resin resist) is formed on the substrate 1 (for example, see FIG. 1(A)), and then the organic thin film 3 is exposed to light, developed, and pre-baked to make the organic thin film 3 organic. Thin film pattern 4 (for example, see Fig. 1(B)).

Next, the organic thin film 3 formed on the substrate 1 is immersed in the above etchant at 40 ° C, and the chrome film is etched by a suitable etching time (for example, see FIG. 1(C)), wherein "appropriate etching time "The time required to remove the portion of the chromium film (conductive film 2) not covered by the organic thin film pattern 4.

Then, the substrate 1 was washed with water and dried.

The example mentioned later describes an experiment for manufacturing the substrate 1, in particular, the substrate 1 having a barrier layer formed on the organic thin film pattern 4.

Then, the substrate 1 was immersed in a chemical solution at 30 ° C for 60 seconds to complete the removal steps of Examples 1-8 and Comparative Examples 1-11, and the chemical solution components used in Examples 1-8 and Comparative Examples 1-11 were detailed. In the following table A.

The chemical composition abbreviations mentioned in Table A are as follows.

HA: Hydroxylamine

TMAH: tetramethylammonium hydroxide

TEAH: tetraethylammonium hydroxide

DEHA: N,N-diethylhydroxylamine

MEA: monoethanolamine

BDG: diethylene glycol monobutyl ether

PW: Water

INH.: Difficulties in removing the barrier layer

A1: After the organic thin film pattern 4 is applied as a chemical solution

A2: After the organic film pattern is immersed in the developer

As shown in Table A, the chemical solution of Example 1 contained 5% by weight aqueous solution of hydroxylamine, 2% by weight of tetramethylammonium hydroxide, and 93% by weight of water.

The chemical solution of Example 2 contained 0.5% by weight aqueous solution of hydroxylamine, 2% by weight of tetramethylammonium hydroxide, and 97.5% by weight ("98" shown in Figure 6 is a rounded value) of water.

The chemical solution of Example 3 contains 30% by weight of hydroxylamine water soluble Liquid, 10% by weight of tetramethylammonium hydroxide and 60% by weight of water.

The chemical solution of Example 4 contained 5% by weight aqueous solution of hydroxylamine, 0.5% by weight of tetramethylammonium hydroxide, and 94.5% by weight of water (the value of "95" shown in Table A is rounded off).

The chemical solution of Example 5 contained 5% by weight aqueous solution of hydroxylamine, 2% by weight of tetraethylammonium hydroxide, and 93% by weight of water.

The chemical solution of Example 6 contained 5% by weight aqueous hydroxylamine solution, 10% by weight choline, and 93% by weight water.

The chemical solution of Example 7 contained 5% by weight aqueous solution of N,N-diethylhydroxyamine, 2% by weight of tetramethylammonium hydroxide, and 93% by weight of water.

The chemical solution of Example 8 contained 5% by weight aqueous hydrazine solution, 2% by weight tetramethylammonium hydroxide, and 93% by weight water.

The chemical solution of Comparative Example 1 contained 2.38% by weight (the "2.4" shown in Table A is a rounded value) aqueous solution of tetramethylammonium hydroxide.

The chemical solution of Comparative Example 2 contained 20% by weight of an aqueous solution of tetramethylammonium hydroxide.

The chemical solution of Comparative Example 3 contained 5% by weight of an aqueous solution of hydroxylamine.

The chemical solution of Comparative Example 4 contained 20% by weight of monoethanolamine, 60% by weight of an organic solvent (diethylene glycol monobutyl ether), and 20 % by weight of water.

The chemical solution of Comparative Example 5 contained 40% by weight of monoethanolamine and 60% by weight of an organic solvent (diethylene glycol monobutyl ether).

The chemical solution of Comparative Example 6 was composed of an organic solvent (diethylene glycol monobutyl ether).

The chemical solution of Comparative Example 7 contained 5% by weight of hydroxylamine, 5% by weight of an organic solvent (diethylene glycol monobutyl ether), and 90% by weight of water.

The chemical solution of Comparative Example 8 contained 5% by weight of hydroxylamine, 15% by weight of tetramethylammonium hydroxide, and 80% by weight of water.

The chemical solution of Comparative Example 9 contained 5% by weight of hydroxylamine, 0.1% by weight of tetramethylammonium hydroxide, and 94.9% by weight of water (the value of "95" shown in Table A is rounded off).

The chemical solution of Comparative Example 10 contained 40% by weight of hydroxylamine, 2% by weight of tetramethylammonium hydroxide, and 58% by weight of water.

The chemical solution of Comparative Example 11 contained 0.2% by weight of hydroxylamine, 2% by weight of tetramethylammonium hydroxide, and 97.8% by weight of water (the "98" shown in Table A is a rounded value).

The chemical solutions of Examples 1-8 and Comparative Examples 1-11 were applied to the substrate 1, and after the removal step, the substrate 1 was washed with pure water, and the pure water on the substrate 1 was blown dry by a nitrogen gas (N ₂ ) sprayed with an air gun. Thus, the dried substrate 1 was produced.

The residual degree of the organic thin film pattern 4 on each of the substrates 1 can be optically displayed It is known by micromirror observation of the change of the organic thin film pattern 4.

The observation results are detailed in the column "A1" of Table A (after the organic film pattern 4 is applied as a chemical solution).

The identification criteria are as follows.

"○": The organic film pattern hardly changed.

"△": The organic thin film pattern except for the deformed layer was removed, but the deformed layer remained and the organic thin film pattern was unevenly mixed.

"X": The organic film pattern is completely mixed with the deformed layer.

The symbol "○" indicates that the organic thin film pattern except for the deformed layer is not removed, and only the deformed layer (for example, a deformed layer or a deposited layer due to etching of the chromium thin film) is removed, and the deformed layer is formed by etching the chromium thin film. It is very thin, and there is almost no change in the microscope image. If the organic thin film pattern 4 except for the deformed layer and the deformed layer caused by etching the chromium film are not removed in the removing step, the microscope image hardly changes.

The substrate 1 having the organic film pattern 4 which is hardly changed before and after the above removal step (i.e., the substrate 1 marked "○" in the A1 field) is immersed in a developer containing 2.38% by weight of an aqueous solution of tetramethylammonium hydroxide. The room temperature was 60 seconds to excessively develop the organic film pattern 4.

The substrate 1 was washed with pure water, and then pure water on the substrate 1 was blown off by blowing nitrogen gas (N ₂ ) with an air gun, thereby obtaining a dried substrate 1.

The degree of remaining of the organic thin film pattern 4 on each of the substrates 1 can be known by observing the change of the organic thin film pattern 4 by an optical microscope.

The observation results are detailed in the column "A2" (after the organic film pattern is immersed in the developer) in Table A.

The identification criteria are as follows.

"○": The organic film pattern was uniformly mixed.

"△": The organic film pattern is unevenly mixed.

"-": The organic film pattern was not immersed in the developer.

Since the chrome film is etched to form a deformed layer on the surface of the organic thin film pattern 4, when the organic thin film pattern 4 is completely removed by using a chemical solution containing the components shown in Table A in the removing step, the chemical solution has a removal due to etching of the chrome film. The function of the deformed layer is too strong, so that the organic thin film pattern 4 except for the deformed layer is also removed, so that the organic thin film pattern 4 cannot be redrawn, although the main purpose is the organic thin film pattern 4. Re-drawing.

If the chemical solution containing the components shown in Table A is used in the removal step, the organic thin film pattern 4 except for the deformed layer may be removed, but the deformed layer caused by etching the chromium film may not be removed, which may be weak penetration of the chemical solution. The chemical layer is not suitable for the main step for re-patterning on the organic film pattern 4 by deforming the layer region while the mixed portion is caused by the organic film pattern other than the deformed layer.

If the organic thin film pattern 4 is not uniformly or only partially mixed after using the chemical solution containing the components shown in Table A in the removing step, the chemical solution cannot remove the deformed layer, but penetrates the weak deformation caused by etching the chromium film. The layer region, and the organic thin film pattern except for the deformed layer is mixed in the weakly deformed layer region, since the deformed layer is not removed, the chemical solution is not suitable for the main step for re-patterning on the organic thin film pattern 4.

If the organic thin film pattern 4 is subjected to chemical dissolution containing the components shown in Table A The liquid removal step hardly changed, indicating that the organic thin film pattern 4 was not removed, and only the deformed layer caused by etching the chromium thin film was removed. The deformed layer caused by etching the chromium thin film was very thin, and the microscope image hardly changed. If the organic thin film pattern 4 except for the deformed layer and the deformed layer caused by etching the chromium thin film are not removed in the removing step, there is almost no change in the microscope image.

In this way, the effect of removing the deformed layer caused by etching the chrome film can be determined by the effect of developing the organic thin film pattern 4 by using a developer, and the developer cannot remove the deformed layer caused by etching the chrome film. When the developer is applied to the organic thin film pattern 4 having a deformed layer caused by etching a chromium thin film, the organic thin film pattern 4 is unevenly or only partially mixed, in other words, if the developer is applied to an organic thin film formed without a deformed layer In the case of the pattern 4, the organic thin film pattern 4 can be uniformly mixed, and the developer is prevented from penetrating into the organic thin film pattern 4 due to the deformation-free layer.

As shown in Table A, the chemical solution in Examples 1-8 was used in the removal step to remove only the barrier layer without removing some of the organic film pattern except the deformed layer.

In contrast, 2.38% by weight aqueous solution of tetramethylammonium hydroxide (Comparative Example 1), 5% by weight aqueous solution of hydroxylamine (Comparative Example 3), monoethanolamine and organic solvent (diethylene glycol monobutyl ether) Chemical solution (Comparative Example 5), chemical solution composed of organic solvent (Comparative Example 6), hydroxylamine and monoethanolamine aqueous solution (Comparative Example 7), and chemistry containing an appropriate concentration of hydroxylamine but insufficient concentration of tetramethylammonium hydroxide The solution (Comparative Example 9) lacked the function of removing the barrier layer.

20% by weight aqueous solution of tetramethylammonium hydroxide (Comparative Example 2), chemical solution containing monoethanolamine, organic solvent (diethylene glycol monobutyl ether) and water (Comparative Example 4), an appropriate concentration of aqueous hydroxylamine solution, However, the concentration of tetramethylammonium hydroxide is too high (Comparative Example 8), an appropriate concentration of aqueous solution of tetramethylammonium hydroxide, but the concentration of hydroxylamine is too high (Comparative Example 10) and an appropriate concentration of aqueous solution of tetramethylammonium hydroxide, but hydroxyl The chemical solution having insufficient amine concentration (Comparative Example 11) is not suitable for the removal step because the undeformed portion of the organic thin film pattern 4 is more completely removed except that the deformed layer is removed.

From the above analysis, the chemical solution of the above embodiment preferably contains the first component (having at least one of the hydroxylamine derivative and the anthracene derivative) in the range of 0.5 to 30% by weight, and the chemical solution of the above embodiment It is preferred to contain the second component in the range of 0.2 to 10% by weight (more preferably in the range of 0.5 to 10% by weight).

Figure 5 will be explained below.

Figure 5 is a view showing the removal of the barrier layer formed on the organic thin film pattern 4 when the mixing ratio of the hydroxylamine derivative in the chemical solution used for the removal step to the second component (e.g., tetraalkylammonium hydroxide) is changed. The first removal rate (Å/min) and how the second removal rate (Å/min) of the portion other than the deformed layer in the starting organic film pattern is removed.

As shown in Fig. 5, when the mixing ratio of the hydroxylamine derivative is increased (i.e., the mixing ratio of the tetraalkylammonium hydroxide is lowered), the first removal rate is also increased.

As shown in Fig. 5, when the mixing ratio of the hydroxylamine derivative is zero (i.e., the mixing ratio of the tetraalkylammonium hydroxide is one), the second removal rate phase Higher; when the mixing ratio of the hydroxylamine derivative increases in the range of 0 to 0.3 (i.e., the mixing ratio of the tetraalkylammonium hydroxide is in the range of 1 to 0.7), the second removal rate becomes Small; when the mixing ratio of the hydroxylamine derivative is in the range of 0.3 to 0.7 (that is, the mixing ratio of the tetraalkylammonium hydroxide is in the range of 0.7 to 0.3), the second removal rate is relatively low; in other words, When the mixing ratio of the hydroxylamine derivative is in the range of 0.3 to 0.7, the portion other than the deformed layer in the organic thin film pattern is hardly removed; when the mixing ratio of the hydroxylamine derivative is increased, it is between 0.7 and 1. When the range is within (i.e., the mixing ratio of tetraalkylammonium hydroxide is in the range of 0.3 to 0), the second removal rate becomes large again.

In this way, in order to prevent the portion other than the deformed layer in the organic thin film pattern from being removed, the proportion of the hydroxylamine derivative in the chemical solution mixture used in the removing step is preferably in the range of 0.3 to 0.7, which is also Within the range of the mixture ratio, the time required to complete the removal step is shortened by increasing the first removal rate, that is, increasing the mixing ratio of the hydroxylamine derivative.

Even if the first removal speed is lower than the second removal speed, the appropriate control for the removal step time can also complete the removal step perfectly.

In this case, if the ratio of V1/V2 is greater than or equal to 0.5, where V1 is the mixing speed of the barrier layer (deformed layer) formed on the organic thin film pattern 4, and V2 is the portion other than the deformed layer in the organic thin film pattern. The mixing speed, i.e., the ratio of hydroxylamine derivatives used in the chemical solution mixture in the removal step is greater than or equal to about 0.23, and the best removal step results may be obtained.

Slower mixing speed of the portion of the organic film pattern other than the deformed layer It may make it easier to control the time required to complete the removal step, and therefore, the mixing speed of the portion other than the deformed layer in the organic film pattern is preferably less than or equal to 1000 Å per minute, and less than or equal to 100 Å per minute, especially The speed is less than or equal to 50 Å per minute.

The fourth embodiment described above includes (a) a main step of re-patterning on the organic thin film pattern 4, a subsequent mixing/deforming step to be described later, and (b) a step of removing the barrier layer formed on the surface of the organic thin film pattern 4. Thereafter, the mixing/deforming step to be described later is performed before the main step of re-patterning on the organic thin film pattern 4, or (c) the mixing described later is completed before the step of removing the barrier layer formed on the surface of the organic thin film pattern 4. The deformation step.

An example of the mixing/deformation step performed in the above fourth embodiment will be described below.

In the mixing and corresponding deformation step of the organic thin film pattern (mixing/deforming step), the organic thin film pattern is contacted with an organic solvent, for example, the organic thin film pattern is exposed to a gaseous environment of an organic solvent, and mixed and returned. Weld the organic film pattern.

The mixing/deforming step is completed, for example, by immersing the substrate 1 together with the organic thin film pattern 4 in an organic solution (mainly an organic solvent) to deform the organic thin film pattern 4 (mainly mixing and reflow).

The mixing/deforming step includes a gas treatment step in which an organic solution (mainly an organic solvent) is boiled and vaporized using an inert gas (for example, nitrogen (N ₂ )), and the substrate is exposed to an atmosphere of the vaporized organic solution.

Before the mixing/deformation step for mixing and deforming the organic thin film pattern formed on the substrate is completed, pre-treatment may be performed by a wet step. The partial removal step for removing the barrier layer is performed less, that is, the chemical film is used to treat the organic thin film pattern, and the previous treatment can remove the barrier layer without damaging the substrate and/or the organic thin film pattern, ensuring uniform completion of the subsequent mixing/ The deformation step.

In the mixing/deforming step, for example, the two adjacent organic thin film patterns are combined to form a single organic thin film pattern to make the region larger, the organic thin film pattern is planarized, or the organic thin film pattern is deformed to be covered as an insulating film. On the circuit pattern on the substrate.

One of exposure, development, wet etching, and dry etching may be performed on at least the organic thin film pattern 4 before the mixing/deforming step.

In the gas environment performing step, the organic thin film pattern on the substrate is mixed and deformed by exposure to various gases (for example, a gas generated by volatilization of an organic solvent), that is, the gas environment performing step is performed in a gas environment of an organic solvent. .

Table 1 shows the preferred organic solvents used in the gas environment application step.

[Table 1] Alcohol (R-OH) alkoxy alcohol ethers (ROR, Ar-OR, Ar-O-Ar) esters, ketones, ethylene glycols, alkylene glycols, glycol ethers class

In Table 1, R is an alkyl group or a substituted alkyl group, and Ar is a phenyl group or an aromatic group other than a phenyl group.

Table 2 shows specific examples of preferred organic solvents used in the gas environment application step.

[Table 2] CH ₃ OH, C ₂ H ₅ OH, CH ₃ (CH ₂ ) XOH isopropanol (IPA) ethylene glycol diethyl ether methoxy alcohol long-chain alkyl ester monoethanolamine (MEA) monoethyl Amine diethylamine triethylamine monoisopropylamine diisopropylamine triisopropylamine monobutylamine dibutylamine tributylamine hydroxylamine diethylhydroxylamine diethylhydroxylamine anhydride pyridine Methylpyridinium acetonide, acetone, dioxane, ethyl acetate, butyl acetate, toluene methyl ethyl ketone (MEK) diethyl ketone dimethyl methylene oxime (DMSO) methyl isobutyl ketone (MIBK) butyl Diethylene glycol n-butyl acetate (nBA) butyrolactone glycol ether acetic acid (ECA) ethyl lactate ethyl pyruvate ethyl 2-heptanone acetate 3-methoxybutyl ester ethylene glycol propylene glycol butanediol ethylene glycol single Ethylene diethylene glycol monoethyl ether glycol monoethyl ether acetate ethylene glycol monomethyl ether glycol monomethyl ether glycol ethylene glycol mono-n-butyl ether polyethylene glycol polypropylene glycol polybutylene glycol polyethylene glycol monoethyl ether polydiethylene Glycol monoethyl ether polyethylene glycol monoethyl ether acetate polyethylene glycol monomethyl ether polyethylene glycol monomethyl ether acetate polyethylene glycol mono-n-butyl ether methyl 3-methoxypropionate (MMP) propylene glycol monomethyl ether (PGME) propylene glycol monomethyl ether acetate (PGMEA) propylene glycol single Ether (PGP) propylene glycol monoethyl ether (PGEE) 3-ethoxypropionate ethyl ester (FEP) dipropylene glycol monoethyl ether tripropylene glycol monoethyl ether polypropylene glycol monoethyl ether propylene glycol monomethyl ether propionic acid propionic acid 3-methoxy methyl ester Acid 3-ethoxymethyl ester N-methyl-2-pyrrolidone (NMP)

When the organic solvent is infiltrated to deform the organic thin film pattern, the gas environment carrying out step of applying the gas generated by the organic solvent to the organic thin film pattern is completed.

For example, the organic thin film pattern is soluble in water, acid or alkali, and the gas environment-executing step can be completed by using an aqueous solution, an acid solution or a gas generated by an alkali solution.

In the above embodiments, the chemical solution is used to remove the entire organic film, or to remove the entire organic film, and the chemical solution may also be used to clean the surface formed without the organic film, or to wash away the residue after removing the entire organic film.

The chemical solution can be used to remove residues from the surface of the substrate, or to clean the substrate at any of the above methods of processing the substrate.

All of the above-mentioned methods of processing a substrate, a chemical solution, a method of cleaning a surface of a substrate, and a method of cleaning away residues after removing the entire organic film are applicable to, for example, a liquid crystal display (LCD) (including a vertical electric field type liquid crystal display, a horizontal electric field). Type (transverse electric field type) liquid crystal display, backlit type liquid crystal display and semi-emissive liquid crystal display), electroluminescence (EL) display, field emission (FED) display, display device of fluorescent display and semiconductor display, plasma display plane (PDP) method of manufacturing an active device, or a method of manufacturing a substrate including an integrated circuit.

The chemical solution of the above embodiment preferably removes the entire organic film pattern in the main step.

In the embodiment in which the organic thin film pattern contains an organic photosensitive film, it is preferred to use a chemical solution in the removing step at least after the photo-activated organic thin film pattern.

The hydroxylamine derivative in the chemical solution of the above embodiment is preferably [(R ₁ -)(R ₂ -)]NOH, wherein each of R ₁ and R ₂ is a C1 to C4 alkyl group or a hydroxyalkyl group, respectively. Further, the hydroxylamine derivative preferably contains at least one of a hydroxylamine and an N,N-diethylhydroxyamine.

The anthracene derivative in the chemical solution of the above embodiment is preferably [(R ₁ -)(R ₂ -)]NN[(-R ₃ )(-R ₄ )], wherein each R ₁ , R ₂ , R ₃ and R ₄ are each one of a hydrogen atom, a methyl group, an ethyl group and a phenyl group, and the anthracene derivative contains at least one of hydrazine, methyl hydrazine, 1,1-dimethyl hydrazine and phenyl hydrazine.

The second component of the chemical solution of the above embodiment preferably contains at least one of tetraalkylammonium hydroxide, alkali metal hydroxide and alkali metal carbonate.

The tetraalkylammonium hydroxide in the chemical solution of the above embodiment is preferably [(R ₁ -)(R ₂ -)(R ₃ -)(R ₄ -)]N ⁺ OH ^- wherein each R ₁ , R ₂ , R ₃ and R ₄ are each one of a C1 to C4 alkyl group or a hydroxyalkyl group, and the tetraalkylammonium hydroxide preferably contains at least tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline And one of dimethyl bis(2-hydroxyethyl)ammonium hydroxide is more preferred.

The alkali metal hydroxide in the chemical solution of the above embodiment preferably contains at least one of sodium hydroxide and potassium hydroxide.

The alkali metal carbonate in the chemical solution of the above embodiment preferably contains at least one of sodium carbonate, sodium hydrogencarbonate, potassium carbonate and potassium hydrogencarbonate.

The content of the first component in the chemical solution of the above embodiment is preferably in the range of 0.5 to 30% by weight, if the first one in the chemical solution The content of the fraction is X% by weight, and X is less than 0.5, or Y% by weight, and Y is greater than 30, and part of the organic film pattern is removed in addition to the deformed layer.

The content of the second component in the chemical solution of the above embodiment is preferably in the range of 0.2 to 10% by weight, and if the content of the second component in the chemical solution is X% by weight, and X is less than 0.2, the chemical The solution will not be able to remove the barrier layer formed on the surface of the organic film pattern, and if the content of the second component in the chemical solution is Y% by weight, and Y is greater than 10, part of the organic film pattern is removed in addition to the deformed layer. .

The hydroxylamine derivative in the chemical solution of the above embodiment preferably contains at least one [(R ₁ -)(R ₂ -)]NOH, wherein each of R ₁ and R ₂ is a C1 to C4 alkyl group or a hydroxy alkane, respectively. Preferably, the anthracene derivative, at least one of [(R ₁ -)(R ₂ -)]NN[(-R ₃ )(-R ₄ )], is contained in the hydroxyamine and one of the N,N-diethylhydroxylamines. , wherein each of R ₁ , R ₂ , R ₃ and R ₄ is a hydrogen atom, one of a methyl group, an ethyl group and a phenyl group, an anthracene, a methyl anthracene, a 1,1-dimethylhydrazine and a phenylhydrazine. First, the content of the first component in the chemical solution is preferably in the range of 0.5 to 30% by weight.

Preferably, the second component of the chemical solution of the above embodiment contains at least one of tetraalkylammonium hydroxide, alkali metal hydroxide and alkali metal carbonate, and tetraalkylammonium hydroxide is [(R ₁ -)(R ₂ - (R ₃ -)(R ₄ -)]N ⁺ OH ^- wherein each of R ₁ , R ₂ , R ₃ and R ₄ is an alkyl or hydroxyalkyl group of C1 to C4, respectively, or at least One of methylammonium, tetraethylammonium hydroxide, choline and dimethylbis(2-hydroxyethyl)ammonium hydroxide, the alkali metal hydroxide contains at least one of sodium hydroxide and potassium hydroxide, alkali metal carbonate It contains at least one of sodium carbonate, sodium hydrogencarbonate, potassium carbonate and potassium hydrogencarbonate, and the content of the second component in the chemical solution is preferably in the range of 0.2 to 10% by weight.

The hydroxylamine derivative in the chemical solution of the above embodiment preferably contains at least one [(R ₁ -)(R ₂ -)]NOH, wherein each of R ₁ and R ₂ is a C1 to C4 alkyl group or a hydroxy alkane, respectively. One of a hydroxyl group, a hydroxylamine and one of N,N-diethylhydroxylamine, the anthracene derivative contains at least one [(R ₁ -)(R ₂ -)]NN[(-R ₃ )(-R ₄ )], wherein Each of R ₁ , R ₂ , R ₃ and R _{4 is} each one of a hydrogen atom, a methyl group, an ethyl group and a phenyl group, an anthracene, a methyl hydrazine, a 1,1-dimethyl hydrazine and a phenyl hydrazine. The content of the first component in the chemical solution is preferably in the range of 0.5 to 30% by weight, and the second component contains at least one of tetraalkylammonium hydroxide, alkali metal hydroxide and alkali metal carbonate, tetraalkylammonium hydroxide. Is [(R ₁ -)(R ₂ -)(R ₃ -)(R ₄ -)]N ⁺ OH ^- , wherein each of R ₁ , R ₂ , R ₃ and R ₄ is an alkyl group of C1 to C4 Or one of hydroxyalkyl groups, or at least one of tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline and dimethylbis(2-hydroxyethyl)ammonium hydroxide, at least the alkali metal hydroxide One of sodium hydroxide and potassium hydroxide, the alkali metal carbonate contains at least sodium carbonate, sodium hydrogencarbonate, potassium carbonate and One of potassium bicarbonate, and the chemical content of the solution of the second component is preferably within a range from 0.2 to 10% by weight range.

The removing step preferably includes the step of cleaning the substrate with a chemical solution which removes only the barrier layer of the surface of the organic thin film pattern without removing the organic thin film pattern excluding the partially deformed layer.

In the chemical solution of the above embodiment, the portion of the organic thin film pattern other than the deformed layer is preferably mixed at a speed of less than or equal to 1000 Å per minute, preferably less than or equal to 100 Å per minute, particularly less than or equal to each minute. The speed of the clock 50Å is the best, and after the removal step is completed at this set speed, the residual amount of the organic thin film pattern is sufficient for drawing on the organic thin film pattern.

The ratio of V1/V2 in the chemical solution of the above embodiment is preferably greater than or equal to 0.5, wherein V1 is the mixing speed of the barrier layer, and V2 is the mixing speed of the portion other than the deformed layer in the organic thin film pattern, V1/V2 The ratio is preferably less than or equal to 5.0.

For example, the ratio of V1/V2 is preferably greater than or equal to 0.5 (for example, less than or equal to 1000), wherein V1 is the mixing speed of the barrier layer, and V2 is the mixing speed of the portion other than the deformed layer in the organic thin film pattern, and The mixing speed of the portion of the organic film pattern other than the deformed layer is less than or equal to 1000 Å per minute.

The ratio of V1/V2 is preferably greater than or equal to 0.5 (for example, less than or equal to 1000), wherein V1 is the mixing speed of the barrier layer, and V2 is the mixing speed of the portion other than the deformed layer in the organic thin film pattern, and the organic film The mixing speed of the portion of the pattern other than the deformed layer is less than or equal to 100 Å per minute.

The ratio of V1/V2 is preferably greater than or equal to 0.5 (for example, less than or equal to 1000), wherein V1 is the mixing speed of the barrier layer, and V2 is the mixing speed of the portion other than the deformed layer in the organic thin film pattern, and the organic film The mixing speed of the portion of the pattern other than the deformed layer is less than or equal to 50 Å per minute.

For example, the deformed layer includes at least surface deformation of the organic thin film pattern caused by one of curing, thermal oxidation, and thermal hardening.

The deformed layer includes surface deformation of the organic thin film pattern caused by wet etching.

The deformed layer includes surface deformation of the organic film pattern caused by dry etching or ashing.

For example, the deposited layer includes a thin layer caused by deposition of deposits due to dry etching on the surface of the organic thin film pattern, and the deformed layer includes surface deformation of the organic thin film pattern caused by deposits generated by dry etching.

In the chemical solution of the above embodiment, it is preferred that the organic thin film pattern originally formed on the substrate comprises an organic thin film pattern formed by printing or lithography.

In the chemical solution of the above embodiment, the organic thin film pattern preferably contains a photosensitive organic film. For example, the photosensitive organic film includes a positive photosensitive organic film and a negative photosensitive organic film.

In the chemical solution of the above embodiment, for example, the positive photosensitive organic film preferably contains a phenol resin as a main component.

In the chemical solution of the above embodiment, the photosensitive organic film is preferably soluble in alkali if exposed to light.

The chemical solution preferably has the function of developing an organic thin film pattern.

The tetraalkylammonium hydroxide in the chemical solution of the above embodiment preferably contains a component having a function of developing an organic thin film pattern.

For example, the substrate is a substrate used for a semiconductor substrate or a display unit.

According to the above embodiment, in the method of processing the substrate, it is preferred that at least a portion of the organic thin film pattern is reduced or removed in the main step.

According to the above embodiment, in the method of processing the substrate, it is preferred that the entire organic film pattern is reduced or removed in the main step.

According to the above embodiment, in the method of processing the substrate, it is preferable to use stripping The main step is completed by a toner or a chemical solution having a developing function, and the chemical solution having a developing function may be a commercially available developer.

According to the above embodiment, in the method of processing the substrate, it is preferable to additionally include, before the removing step, using the organic thin film pattern as a photomask, and the first thin film processing step of patterning on the lower film disposed under the organic thin film pattern, and immediately following In the first film processing step or the second film processing step after the main step, the organic film pattern is used as a mask, and then the lower film is patterned.

According to the above embodiment, the lower film in the method of processing the substrate is preferably formed into a tapered or stepped pattern in the second film processing step.

According to the above embodiment, in the method of processing the substrate, it is preferable to additionally include an organic thin film pattern processing step of the organic thin film pattern process at least immediately after the removing step or the main step, the organic thin film pattern processing step comprising mixing the organic thin film pattern and The mixing/deformation step of the deformation.

According to the above embodiment, in the method of processing the substrate, it is preferable to additionally include an organic thin film pattern processing step of the organic thin film pattern process at least immediately after the removing step or the main step, the organic thin film pattern processing step comprising heating the organic thin film pattern The heating step is a mixing/deforming step with mixing and deforming the organic film pattern.

According to the above embodiment, at least one of exposure, development, wet or dry etching is preferably performed on the organic thin film pattern before the organic thin film patterning step in the method of processing the substrate.

According to the above embodiment, in the method of processing the substrate, it is preferable to additionally include the step of patterning the lower film on the lower film disposed under the organic film pattern before the mixing/deforming step, using the organic film pattern as the mask.

According to the above embodiment, in the method of processing the substrate, it is preferable to additionally include the step of patterning the lower film after the mixing/deforming step, using the organic film pattern as the mask, and patterning on the lower film disposed under the organic film pattern.

According to the above embodiment, the region of the organic thin film pattern in the method of processing the substrate is preferably increased in the mixing/deforming step.

According to the above embodiment, in the method of processing the substrate, the two adjacent organic film patterns are preferably bonded to each other in the mixing/deforming step.

According to the above embodiment, the organic thin film pattern is preferably planarized in the mixing/deforming step in the method of processing the substrate.

According to the above embodiment, in the method of processing the substrate, the organic thin film pattern is preferably deformed in the mixing/deforming step so that the organic thin film pattern is used as an insulating film to cover the circuit pattern on the substrate.

According to the above embodiment, in the method of processing a substrate, the organic thin film pattern is mixed/reflowed by using an organic solution in the mixing/deforming step.

According to the above embodiment, the organic solution used in the method of treating the substrate preferably contains at least one of the following organic solvents:

(a) Alcohols (R-OH)

(b) Ethers (R-O-R, Ar-O-R, Ar-O-Ar)

(c) Ester

(d) ketones and

(e) glycol ethers

Wherein R is an alkyl group or a substituted alkyl group, and Ar is a phenyl group or an aromatic group other than a phenyl group.

According to the above embodiment, the organic thin film pattern is used in the method of processing the substrate The case is in contact with the organic solution to cause mixing/reflow.

According to the above embodiment, the mixing/reflow phenomenon is caused by immersing the organic thin film pattern in the organic solution in the method of processing the substrate.

According to the above embodiment, the mixing/reflow phenomenon is caused by exposing the organic thin film pattern to the organic solution vapor in the method of processing the substrate.

According to the above embodiment, the mixing/deforming step in the method of processing the substrate comprises the step of exposing the organic thin film pattern to a gaseous environment in an atmospheric environment of the vaporized organic solution.

According to the above embodiment, the atmosphere in the method of processing the substrate is formed by boiling an organic solution by using an inert gas.

According to the above embodiment, in the method of processing a substrate, the organic thin film pattern preferably has at least two portions having different thicknesses.

According to the above embodiment, in the method of processing a substrate, the organic thin film pattern preferably has at least two portions having different thicknesses due to different exposure degrees.

To produce an organic thin film pattern having two or more different thicknesses, the first exposure step for fabricating the organic thin film pattern is performed on the organic thin film pattern with two or more exposure levels, for example, in the initial exposure, Or a photographic mask of varying degrees of light, developed (this "developing" is used to make the starting organic film pattern, unlike the development performed in the main step). The organic film pattern has been controlled at two or more exposure levels, if resistant The etched pattern is a positive resist pattern, and the partially exposed organic thin film pattern portion is thinned. If the resist pattern is a negative resist pattern, the partially exposed organic thin film pattern portion is thinned, so that the result is obtained. The organic film pattern has two or more different thicknesses.

From the origin of the initial exposure, it is possible to determine the retention of the thinner portion or the removal of the less thick portion of the organic thin film pattern by the development of the main step.

In the case of the developing solution used in the development of the main step, if a positive developing agent is used in the developing step for producing the starting organic film pattern, a positive developing agent is also used at this time, and if The negative developing agent used in the developing step of producing the starting organic film pattern is also a negative developing agent.

The main step for determining the retention of the thinner portion or the removal of the lesser thickness portion of the organic thin film pattern preferably avoids exposing the organic thin film pattern to be formed on the substrate before the step of processing the organic thin film pattern is completed. The initial organic film pattern was later carried out.

According to the above embodiment, in the method of processing the substrate, it is preferable to additionally include an organic thin film pattern as a photomask, a lower film patterning step of patterning on the lower film disposed under the organic thin film pattern, and a removal of the portion in different thickness portions. The selection step of the relatively thin thickness of the organic thin film pattern portion can leave a thicker organic thin film pattern than the removed portion.

According to the above embodiment, in the method of processing the substrate, it is preferable to additionally include a second lower film patterning step of patterning on the lower film disposed under the organic film pattern after the selecting step.

By avoiding exposing the organic thin film pattern, before the step of processing the organic thin film pattern is completed, and the initial organic thin film pattern is formed on the substrate, and then the exposure step in the organic thin film pattern processing step is performed, a new look (pattern) can be obtained. Organic film pattern.

According to the above embodiment, in the method of processing the substrate, the barrier layer is preferably It can be selectively removed in the removal step.

According to the above embodiment, in the method of processing the substrate, the barrier layer is removed in the removing step so that a portion of the organic thin film pattern other than the deformed layer remains and is exposed.

According to the above embodiment, in the method of processing the substrate, it is preferable to additionally include the step of patterning the lower film on the lower film disposed under the organic film pattern by using the organic film pattern as a mask, and performing the step before the removing step.

This removal step can be performed after the exposure step of the organic thin film pattern (this step is different from the initial exposure step of the organic thin film), between the removal steps, or between the removal step and the main step.

The exposure step of the organic thin film pattern is preferably performed only on the portion of the organic thin film pattern of the desired region (front surface) in the substrate.

The exposure step of completing the organic thin film pattern can sufficiently expose the entire substrate, or determine the new appearance (pattern) of the organic thin film pattern according to the area of the illumination.

For example, when a new face (pattern) of the organic film pattern is determined depending on the area of the light, at least one organic film pattern can be divided into a plurality of regions.

After the organic thin film pattern is formed on the semiconductor substrate, the liquid crystal display substrate, or other substrate, and the organic thin film pattern is processed again, the organic thin film pattern can be directly used without processing the underlying thin film disposed under the organic thin film pattern, for example, when the organic thin film pattern is made of an insulating material In the composition, the organic thin film pattern can be used as an insulating film pattern.

The chemical solution may contain additives such as a resist or a stabilizer.

In the method of manufacturing an element having a substrate, the display may be a liquid crystal display , electroluminescent (EL) display, field emission display or plasma display.

The advantages of the above embodiment will be described below.

In the above embodiment, the removing step can remove the barrier layer formed on the surface of the organic thin film pattern without mixing the organic thin film pattern, so that the second or subsequent organic thin film pattern can be smoothly developed, or after the removal step is smoothly performed. The main step for processing the organic film pattern.

Although the present invention has been disclosed in the above embodiments, it is not intended to define the present invention, and the scope of protection of the present invention can be modified and retouched without departing from the spirit and scope of the present invention. This is subject to the definition of the scope of the patent application.

1‧‧‧Substrate

2‧‧‧Electrical film

3‧‧‧Organic film

4‧‧‧Organic film pattern

5‧‧‧Organic film pattern

6‧‧‧Semiconductor film

7‧‧‧Organic film pattern

101‧‧‧Substrate

102‧‧‧Electrical film

103‧‧‧Organic film

104‧‧‧Organic film pattern

The first (A) to (F) drawings illustrate the state in which the individual steps are completed in the method of processing the substrate according to the first embodiment.

The second (A) to (F) drawings illustrate the state in which the individual steps are completed in the method of processing the substrate according to the second embodiment.

The third (A) to (F) drawings illustrate the state in which the individual steps are completed in the method of processing the substrate in accordance with the third embodiment.

4(A) to (F) are diagrams showing the state in which the individual steps are completed in the method of processing the substrate according to the fourth embodiment.

Figure 5 is a view showing the removal of the barrier layer formed on the organic thin film pattern 4 when the mixing ratio of the hydroxylamine derivative in the chemical solution used for the removal step to the second component (e.g., tetraalkylammonium hydroxide) is changed. First removal rate (Å/min), and removal of the starting organic film pattern except the deformed layer How does the second partial removal speed (Å/min) change.

6(A) to (F) illustrate the state in which the individual steps are completed in the corresponding method of processing the substrate.

1‧‧‧Substrate

2‧‧‧Electrical film

5‧‧‧Organic film pattern

6‧‧‧Semiconductor film

Claims (38)

A method of processing a substrate, comprising: a step of forming an organic thin film pattern on a substrate; a removing step of removing at least a barrier layer formed on a surface of the organic thin film pattern; and a main step of processing the organic thin film pattern, wherein The barrier layer includes at least one of a deformed layer formed by a surface change of the organic thin film pattern and a deposited layer formed by depositing a deposit on the surface of the organic thin film pattern, and the removing step comprises using 0.5% by weight to 30% by weight. The first component composed of at least one of the hydroxylamine derivative and the anthracene derivative, and the developing functional liquid component contains an aqueous solution of 0.5% by weight to 10% by weight. The method of processing a substrate according to claim 1, wherein in the main step, at least a portion of the organic thin film pattern is reduced or removed. The method of processing a substrate according to claim 1, wherein in the main step, the entire organic thin film pattern is reduced or removed. The method for processing a substrate according to claim 1, wherein the main step is performed by using a stripping agent or a chemical solution having a developing function, wherein the stripping agent or a chemical solution having a developing function is used for manufacturing. A developer that develops an organic film pattern. The method for processing a substrate according to claim 1, further comprising: before the removing step, using the organic thin film pattern as a mask, in the configuration a first film processing step of patterning on the underlying film under the organic film pattern; and the organic film pattern as a mask immediately adjacent to the first film processing step or the main step, disposed under the organic film pattern A second film processing step of patterning on the underlying film. The method of processing a substrate according to claim 5, wherein the lower film is formed into a tapered or stepped pattern in the second film processing step. The method for processing a substrate according to claim 1, further comprising the step of processing the organic thin film pattern of the organic thin film pattern after the removing step and the at least one step of the main step, the organic thin film pattern processing step comprising A mixing/deforming step of mixing the organic film pattern and deforming. The method for processing a substrate according to claim 1, further comprising the step of processing the organic thin film pattern of the organic thin film pattern after the removing step and the at least one step of the main step, the organic thin film pattern processing step comprising A heating step of heating the organic film pattern, and a mixing/deforming step of mixing and deforming the organic film pattern. The method of processing a substrate according to claim 8, wherein at least one of exposure, development, wet and dry etching is performed on the organic thin film pattern before the organic thin film patterning step. The method for processing a substrate according to claim 8 , further comprising: before the mixing/deforming step on the organic thin film pattern, using the organic thin film pattern as a photomask, disposed under the organic thin film pattern Film mapping steps below the film on the film. The method for processing a substrate according to claim 8, further comprising performing the mixing/deforming step on the organic thin film pattern, using the organic thin film pattern as a photomask, and disposed under the organic thin film pattern Film mapping steps below the film on the film. The method of processing a substrate according to claim 8, wherein in the mixing/deforming step, a region of the organic thin film pattern is increased. The method of processing a substrate according to claim 8, wherein in the mixing/deforming step, the adjacent organic film patterns are combined into one. The method of processing a substrate according to claim 8, wherein the organic thin film pattern is planarized in the mixing/deforming step. The method of processing a substrate according to claim 8, wherein the organic thin film pattern is deformed in the mixing/deforming step, and the organic thin film pattern is used as an insulating film to cover the circuit pattern on the substrate. The method of processing a substrate according to claim 8, wherein the organic film pattern is mixed/reflowed by using an organic solution in the mixing/deforming step. The method for processing a substrate according to claim 16, wherein the organic solution contains at least one of the following organic solvents: (a) an alcohol (R-OH); (b) an ether (ROR, Ar-). OR, Ar-O-Ar); (c) esters; (d) ketones; (e) a glycol ether; wherein R is an alkyl group or a substituted alkyl group, and Ar is a phenyl group or an aromatic group other than a phenyl group. The method of processing a substrate according to claim 16, wherein the organic thin film pattern is in contact with the organic solution to cause a mixing/reflow phenomenon. The method of processing a substrate according to claim 16, wherein the organic thin film pattern is immersed in the organic solution to cause a mixing/reflow phenomenon. The method of processing a substrate according to claim 16, wherein the organic film pattern is exposed to the organic solution vapor to cause a mixing/reflow phenomenon. The method of processing a substrate according to claim 16, wherein the mixing/deforming step comprises exposing the organic film pattern to a gaseous environment performing step of vaporizing the organic solution in the atmosphere. The method for processing a substrate according to claim 21, wherein the atmospheric environment is formed by boiling and vaporizing the organic solution with an inert gas. The method of processing a substrate according to claim 1, wherein the organic thin film pattern has at least two portions having different thicknesses. The method of processing a substrate according to claim 23, wherein the organic film pattern has at least two portions of different thicknesses due to different degrees of exposure. The method of processing the substrate as described in claim 23 of the patent application scope The method further includes: a step of patterning the lower film formed on the lower film disposed under the organic film pattern by using the organic film pattern as a mask; and removing the organic layer having a relatively thin thickness in the portion of the different thickness The step of selecting the thin film pattern portion can leave a thicker organic film pattern than the removed portion. The method for processing a substrate according to claim 25, further comprising the step of patterning the second lower film patterned on the lower film disposed under the organic film pattern after the selecting step. The method of processing a substrate according to claim 1, wherein the barrier layer is selectively removed in the removing step. The method of processing a substrate according to claim 1, wherein the removing layer selectively removes the barrier layer such that a portion of the organic thin film pattern other than the deformed layer remains and is exposed. The method of processing a substrate according to claim 1, wherein the deformed layer comprises surface deformation of the organic thin film pattern caused by at least one of curing, thermal oxidation, and thermal hardening. The method of processing a substrate according to claim 1, wherein the deformed layer comprises surface deformation of the organic thin film pattern caused by wet etching. The method of processing a substrate according to claim 1, wherein the deformed layer comprises surface deformation of the organic thin film pattern caused by dry etching or ashing. A method of processing a substrate as described in claim 1 of the patent scope, The deposited layer includes a thin layer caused by deposition of deposits generated by dry etching on the surface of the organic thin film pattern. The method of processing a substrate according to claim 1, wherein the deposited layer is formed on the surface of the organic thin film pattern by dry etching. The method of processing a substrate according to claim 1, wherein the organic thin film pattern originally formed on the substrate comprises an organic thin film pattern made by printing. The method of processing a substrate according to claim 1, wherein the organic thin film pattern originally formed on the substrate comprises an organic thin film pattern made by lithography. The method for processing a substrate according to claim 1, further comprising the step of patterning the film on the lower film disposed under the organic film pattern before the removing step, using the organic film pattern as a mask . A method of manufacturing a device comprising a substrate, comprising the method of processing a substrate as described in claims 1 to 36 to produce a display comprising a substrate or a semiconductor device comprising the substrate. A method of manufacturing an element having a substrate as described in claim 37, wherein the display is a liquid crystal display, an electroluminescence (EL) display, a field emission display, or a plasma display.