TWI413286B - Method for fabricating a device and method for patterning a organic semiconductor layer - Google Patents

Abstract

A method for fabricating a device is disclosed, comprising providing a substrate, forming an active formed of organic semiconductor material on the substrate, forming a patterned photosensitive layer on the active layer, treating the active layer using a solvent vapor to transfer the pattern of the photosensitive layer to the active layer and the solvent vapor is permeated into the active layer.

Description

Method for fabricating component and patterning method of organic semiconductor layer

The present invention relates to a method of fabricating an element including an organic semiconductor layer, and more particularly to a method of patterning an organic semiconductor layer with a vapor solvent.

Organic semiconductor materials can be combined with low-cost substrates, processes and flexible features. They have been widely used in the fields of organic transistors, organic light-emitting diodes and photovoltaic devices, among which radio frequency identification systems Applications such as RFID tags, chemical sensors, solar cells, and active soft displays have been recognized as applications for faster implementation of organic electronic components.

Commonly used patterning methods for small molecule organic semiconductor materials include the use of shadow masks, dry etching, thermal transfer, laser transfer, and the use of photosensitive organic semiconductors. At present, small-molecule organic semiconductor materials are mainly vacuum-processed (such as thermal evaporation) with shielding masks, but there are many limitations in this technology: for example, the minimum line width of the mask is limited to be larger than that of the mask mask. Generally, the line width that can be achieved by exposure and development; when the mask is in contact with the component, scratches or other defects are easily generated; the shadowing effect may cause the definition of the edge of the pattern; the shielding mask has a short service life, and unintended damage often occurs. ; and not suitable for large-area processes.

In order to meet the trend requirements of flexible substrates, low-temperature processes, and low manufacturing costs, solution processes such as roll-to-roll coating, blade coating, and spin coating are required. One of the future directions for development. In the solution process, the most important thing is how to pattern the organic semiconductor. The most direct effect of the unpatterned organic semiconductor in the component is that the leakage current of the ungated area causes the on/off ratio of the transistor to deteriorate. When applied to analog components, signal contrast may be caused. Contrast ratio), applied to digital components, may affect the noise margin, while the active layer etching using conventional dry etching often causes active layer damage and reduces carrier conduction characteristics. Therefore, how to pattern organic semiconductor materials without damaging component characteristics and reliability will be an important issue.

According to the above problem, the present invention provides a method for fabricating a device, comprising the steps of: providing a substrate on which an active layer composed of an organic semiconductor material is formed, forming a patterned photosensitive layer on the active layer, in a vapor state The solvent treats the active layer to transfer the pattern of the patterned photosensitive layer to the active layer, wherein the solvent in the vapor state penetrates into the active layer.

The invention provides a method for patterning an organic semiconductor layer, comprising the steps of: providing an organic semiconductor layer, forming a patterned photosensitive layer on the organic semiconductor layer, treating the organic semiconductor layer with a solvent in a vapor state, and patterning The pattern of the photosensitive layer is transferred to the organic semiconductor layer, wherein the solvent in the vapor state penetrates into the organic semiconductor layer to rearrange the molecules in the organic semiconductor layer.

In order to make the invention more obvious and obvious, a detailed description is given below, and in conjunction with the accompanying drawings, the detailed description is as follows:

Hereinafter, a method for fabricating an element including an organic semiconductor layer according to an embodiment of the present invention will be described with reference to FIGS. 1A to 1E and 2, wherein FIG. 1A to FIG. 1E are cross-sectional views of the intermediate structure of the component process of the present invention, 2 is a plan view of the components of the present invention. First, referring to FIG. 1A, a substrate 102 such as glass is provided, and a gate 104 is formed on the substrate 102 to form a gate dielectric layer 106 such as ytterbium oxide on the substrate 102 and the gate 104 to form a source. The pole 108 and a drain 110 are on the gate dielectric layer 106. Dissolving the soluble organic semiconductor material in a suitable solvent to form a precursor, followed by wet film formation, such as blade coating, spin coating, dip coating (dip The precursor film is formed into an organic semiconductor film to form the active layer 112 in FIG. 1A.

Referring to FIG. 1B, a photosensitive layer 114 composed of a photosensitive material is formed on the active layer 112. Referring to FIG. 1C, the design pattern on the mask 116 is converted to the photosensitive layer 114 via an exposure and development process, as shown in FIG. 1D. Next, an important step of an embodiment of the present invention is carried out, wherein a solvent is heated to form a vapor state, a vapor solvent is introduced into a process chamber, and an element fabricated to the above step is placed in the process chamber, and the vapor solvent is not The active layer 112 blocked by the photosensitive layer 114 reacts, as shown in FIG. 1E, to remove a portion of the active layer 112 that is not blocked by the photosensitive layer 114, and transfers the pattern of the photosensitive layer 114 to the active layer 112. It should be noted that, unlike the general dry etching process to pattern the active layer 112, the vapor solvent of the present embodiment penetrates into the active layer 112 composed of the organic semiconductor material, and the dry etching process generally causes damage to the organic semiconductor material. , affecting the electrical performance of the component. In the present embodiment, the vapor solvent is infiltrated into the organic semiconductor material, so that the organic semiconductor film active layer 112 formed by the wet film formation method tends to have poor molecular arrangement, and the poorly arranged organic semiconductor film affects the electrical performance of the device. . Therefore, in this embodiment, the vapor solvent is infiltrated into the organic semiconductor material, and the molecules of the organic semiconductor material are rearranged to exhibit better electrical properties.

Further, it is necessary to pay special attention to the fact that the solvent structure used in the present embodiment is preferably similar to the structure of the organic semiconductor material, so that the penetration of the vapor solvent into the organic semiconductor material can effectively improve the electrical properties of the device. For example, when the organic semiconductor material is a material having a benzene ring such as triethylsilylethynyl anthradithiophene (TES-ADT), the vapor solvent preferably also has a benzene ring such as toluene. In order to allow the vapor solvent to penetrate into the organic semiconductor material, the process time of the step is about 5 to 10 minutes, and the temperature of the vapor solvent is about 20 to 200 ° C. However, the present invention is not limited thereto, and the process time of the embodiment can be The solvent changes. An example of this step of the embodiment of the present invention is described below by way of an embodiment.

[Examples]

The organic semiconductor material of triethylsilylethynyl anthradithiophene (TES-ADT) is applied onto the source, drain and gate dielectric layers by spin coating, then the toluene is heated to a vapor state, and the vaporized toluene is introduced into the solvent. In a closed process room. The component on which the photosensitive layer is formed on the organic semiconductor material layer is placed in a process chamber, and the toluene in a vapor state is subjected to a process of about 10 minutes at room temperature (about 25 ° C) to transfer the pattern of the photosensitive layer to the organic semiconductor material. And allowing the vaporous toluene to penetrate into the organic semiconductor material.

In the above embodiments, the source and the drain are formed under the active layer, and the present invention does not limit the positions of the source and the drain. As shown in FIGS. 3 and 4, the present invention can be used in another embodiment. A pole 302 and a drain 304 are formed on the active layer 306, and a patterned photoresist 308 is formed on the active layer 306 and the source 302/drain 304. The same step of patterning the active layer with a vapor solvent can be performed.

The electrical properties of the device produced by the above embodiment of the present invention will be described below with reference to Fig. 5 and the following Table 1.

In the electrical tests of Figures 5 and 1 above, the first curve is the electrical characteristics of the component that is not patterned by the vapor solvent, and the second curve is patterned by the vapor solvent and aging for one day. Electrical characteristics, the third curve is the electrical characteristics of the solvent vapor treatment and aging treatment for five days. According to the test results of the above components, the above embodiment of the present invention patterns the organic semiconductor layer with a vapor solvent, which can effectively reduce the on-off ration, the subthreshold swing (SS) and the mobility of the component. (mobility).

According to the above, the invention has the following advantages of patterning the organic semiconductor material with a vapor solvent: the process is simple, the low-temperature process, the large-area process is made, the cost of the process machine is greatly reduced, the cost of the process material is reduced, the functional characteristics and the reliability are reliable. Degree improvement.

While the invention has been described above by way of a preferred embodiment, it is not intended to limit the invention, and may be modified and modified without departing from the spirit and scope of the invention. The present invention may further include a film made of the above block material. Therefore, the scope of the invention is defined by the scope of the appended claims.

102. . . Base

104. . . Gate

106. . . Gate dielectric layer

108. . . Source

110. . . Bungee

112. . . Active layer

114. . . Photosensitive layer

116. . . Mask

302. . . Source

304. . . Bungee

306. . . Active layer

308. . . Patterned photosensitive layer

1A to 1E are cross-sectional views showing an intermediate structure of an element process according to an embodiment of the present invention.

Figure 2 is a plan view showing the components of an embodiment of the present invention.

Fig. 3 is a cross-sectional view showing the structure of an element in which a source and a drain are formed on an active layer in an embodiment of the present invention.

Fig. 4 is a plan view showing the structure of elements of the source and the drain formed on the active layer in an embodiment of the invention.

Fig. 5 is a view showing the electrical characteristics of an element produced in an embodiment of the present invention.

102. . . Base

104. . . Gate

106. . . Gate dielectric layer

108. . . Source

110. . . Bungee

112. . . Active layer

114. . . Photosensitive layer

Claims (19)

A method for fabricating a device, comprising the steps of: providing a substrate on which an active layer composed of an organic semiconductor material is formed; forming a patterned photosensitive layer on the active layer; and treating the solvent in a vapor state The active layer transfers the pattern of the patterned photosensitive layer to the active layer, wherein the vapor state solvent penetrates into the active layer. The method for fabricating an element according to claim 1, wherein the step of forming the active layer composed of the organic semiconductor material is a wet film formation method. The method for producing an element according to claim 2, wherein the wet film formation method comprises blade coating, spin coating or dip coating. The method of fabricating the device of claim 1, wherein the solvent in the vapor state penetrates into the active layer to rearrange molecules in the organic semiconductor layer. The method for producing an element according to claim 1, wherein the organic semiconductor material and the solvent each have a benzene ring. The method of fabricating the device of claim 1, wherein the organic semiconductor material is triethylsilylethynyl anthradithiophene (TES-ADT). The method for producing an element according to claim 1, wherein the solvent is toluene. A method of fabricating an element as described in claim 1 of the patent application, The process time for treating the active layer with the solvent in the vapor state is less than 600 seconds. The method for producing an element according to claim 1, wherein the temperature of the solvent in the vapor state is from 20 ° C to 200 ° C. The method of fabricating the component described in claim 1 of the patent application further includes aging the component. The method for fabricating the component according to claim 10, wherein the aging treatment time is 3 to 240 hours. A method for patterning an organic semiconductor layer, comprising the steps of: providing an organic semiconductor layer; forming a patterned photosensitive layer on the organic semiconductor layer; and treating the organic semiconductor layer with a solvent in a vapor state to pattern the organic semiconductor layer The pattern of the photosensitive layer is transferred to the organic semiconductor layer, wherein the solvent of the vapor state penetrates into the organic semiconductor layer to rearrange molecules in the organic semiconductor layer. The method of patterning an organic semiconductor layer according to claim 12, wherein the organic semiconductor material and the solvent each have a benzene ring. The method for patterning an organic semiconductor layer according to claim 12, wherein the organic semiconductor layer is composed of triethylsilylethynyl anthradithiophene (TES-ADT). The method of patterning an organic semiconductor layer according to claim 12, wherein the solvent is toluene. The method of patterning an organic semiconductor layer according to claim 12, wherein the process time of treating the active layer with the solvent of the vapor state is less than 600 seconds. The method for patterning an organic semiconductor layer according to claim 12, wherein the solvent of the vapor state has a temperature of 20 ° C to 200 ° C. The patterning method of the organic semiconductor layer according to claim 12 of the patent application further includes aging the organic semiconductor layer. The method for patterning an organic semiconductor layer according to claim 18, wherein the aging treatment time is 3 to 240 hours.