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TWI336913B - A chip and manufacturing method and application thereof - Google Patents

A chip and manufacturing method and application thereof Download PDF

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Publication number
TWI336913B
TWI336913B TW095126168A TW95126168A TWI336913B TW I336913 B TWI336913 B TW I336913B TW 095126168 A TW095126168 A TW 095126168A TW 95126168 A TW95126168 A TW 95126168A TW I336913 B TWI336913 B TW I336913B
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TW
Taiwan
Prior art keywords
layer
opening
wafer
manufacturing
contact
Prior art date
Application number
TW095126168A
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English (en)
Other versions
TW200807582A (en
Inventor
Kwun Yao Ho
Moriss Kung
Wen Yuan Chang
Hsueh Chung Lu
Original Assignee
Via Tech Inc
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Filing date
Publication date
Application filed by Via Tech Inc filed Critical Via Tech Inc
Priority to TW095126168A priority Critical patent/TWI336913B/zh
Priority to US11/530,193 priority patent/US7504726B2/en
Publication of TW200807582A publication Critical patent/TW200807582A/zh
Application granted granted Critical
Publication of TWI336913B publication Critical patent/TWI336913B/zh

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Description

^36913 VIT06-〇〇69]〇〇.-jw 21278twf.doc/006 . 九、發明說明： 【發明所屬之技術領域】 本發明是關於一種晶片及其製造方法與應用，且本發明特別是關 於一種背部有至少一個内礙式凸塊（embedded so丨der bump )的晶 « 片及其製造方法與應用。 【先前技術】 φ 隨著電子產業的發展，將不同功能的晶片整合在同一晶片或同一 封裝體（package)已是一種持續的需求，以使得電子裝置能更輕 及更小。為達此目的’有一種單系統封裝（SyStem_〇n_package，S〇p) 技術正在發展著。 關於SOP的技術，例如，美國專利第6,825,567號提出一種面對面 的多晶片的覆晶封裝（faCe_t0_faCe multi_Chip Wp chip卯^^弘）， 其架構可改善封裝填充材料（Under刖ing material)的毛細流動 (capillary flow)問題。此外，s〇P的技術中有一種稱為晶片接晶 .# 片（chip_on_chlP)技術。例如’美國專利第7,045,901號提供了晶 .片接晶片的連接（connection)架構’其特徵在於此連接架構的某 晶片會座落在印刷電路板的一矩形開口窗洞（〇pen wind〇w h〇le) 上。 【發明内容】 本發明目的在於提供一種新的晶片接晶片技術。而本發明提供了 一種晶片，此晶片可用於連接其他晶片，以產生一種晶片接晶片 的架構。透過本發明的晶片，可將不同功能的晶片整合在同一封 5 VJ'IO6-()069I00-TW 2l278twf.doc/〇〇6 的裸晶截面13所示的接觸 件121的1部。在本發明實即接觸端部131為導電組 的方法可為：乾絲 &科，移除部份的底座區域丨23 材料技術。 '/柄刻、化學顧研磨 '或其他移除 圖在移除部份的底座區域丨2；3 认曰 152上，會有至少—個裸曰㈣^ 之後，於晶圓15的背面 1；,^ 14 於第2Β圖之戴線βΒ，。 # 2Α圖的裸晶截面】3來自 見第3Α圖至第3Β圖。為了制.生士政0 — 觸墊⑹的裸晶截面16中，^ 例的晶片’在關於接 iu^3Am,,- , v電組件164可不連接至接觸墊丨61， U1Γ 導電組件164亦可透過其他的導線⑹或電子 魅〗D .各種M〇SFET、二極體等等，未圖示）而連接至接 ^ 61 ： ,ia〇，fi, 165 ]6] ? 透過其他的電路而間接連接至接觸整⑹。此線 電^域162内，而導電組件164可由積體電路=1625 將背Γ。進一步，使用與第2A圖相關的製程方法， =6的底座區域163移除’以將導電組件164露出，因而得到 口第3β圖的裸晶截面卩所示的接觸端部。 在第4Α目至第4C目中’其顯示關於本發明實施例的裸晶截面 (18、】9、20)、導電組件182、接觸端部181 (導電組件182的 一端部）、及底座區域183。見第4Α圖及第4Β圖。為了製造本發 明的晶片’在底座區域183的表面丨8〇上覆蓋—層絕緣層191。接 1336913 VITO6-OO69IO0-TW 21278twf.doc/006 著’移除部份的絕緣層⑼以得到對應於接觸端部⑻的開口 ’如第4C圖所示。應注意的是，在本發明實施例中，開口 2⑴ 的範圍可大於接觸端部181的範圍（未圖示），或開口 201的範圍 可小於接觸端部⑻的範圍，或開口 201的範圍可等於接觸脖部 ⑻的範圍（未圖示）。換句話說，在移除部份的絕緣層⑼^ 此絕緣層19丨可爐蓋部分的接觸端部18丨，或者，親緣層191 亦可不覆盍部分的接觸端部18丨（未圖示）。 j第5A D至第5C圖。其顯示關於本發明實施例的裸晶截面⑼、 2)。參考第5A圖及第5B圖，為了製造本發明實施例的晶 層丨91的表面上覆蓋一 ( 被填滿，或開，可不被填 ，者$考第5C圖，移除部份的熱塑性材料層211， 或開! 22^1開口 220的範圍可大於開口 201的範圍， 二:等於開口 2〇1的範圍(未圖示)，或開口挪 中2广湖(未圖示)。此外，在本發明實施例 絕緣片H 材料層2U可不覆蓋開口 201内側壁的 ⑼^未’ f熱塑性材料層211可覆蓋開口 内側壁的絕緣層 塑性211可不覆蓋接觸端部⑻，或熱 科層211可覆盎部分的接觸端部181 (未圖示）。 的疋，本發明實施例$所使用的熱難材科是-種严戶越 獻的㈣。μ姆财& 是0材科、或其他熱塑性材料。 9 1336913 VIT06-0069IOO-TW 21278twf.doc/006 見第6A圖及第6B圖。其顯示關於本發明實施例的裸晶截面（22、 ' 23)。為了製造本發明實施例的晶片，將一層導電層231覆蓋在熱 • 塑性材料層211的表面221上，如第6B圖所示，而此導電層231 < 可為凸塊底層金屬（UBM，Under Bal丨 Metallurgy 或 Under Bump Metallurgy)層，亦可為其他種類的金屬層，或亦可為合金層。於 此時，開口 230内的側壁上亦可形成導電層23丨。在本發明實施例 鲁 中，形成‘電層231的方法為：物理沉積、化學沉積、電鑛、或 其他導電層形成技術。 為了製造本發明實施例的晶片，必須將凸塊（s〇kJer bump)形成 =開口 230内，而後再將熱塑性材料層211上的導電層23ι移除。 第7A圖至第7B圖及$ 8A ®至第8C圖解釋了這樣的過程。 ^第从圖及第7B圖。其顯示關於本發明的裸晶截面（24 。 發明實施例白勺晶片，參考第7A _，將熱塑性材料層 上^電詹231移除，而開口 23〇内側壁上的導 在本發明實施例中，移除導電層23丨的方法為：乾式触刻、 =、化學機械研磨、或其他移除材赌術。 /BE],在移除熱塑性材料層2 形成於開口 230内。 上的辜㈣231之後，將凸塊250 ^日日—25的方法钟不同的選擇。首先 在v電物上形成一遮蔽層(mask)26i。其次， 10 1336913 VIT06-0069I00.TW 21278twf.doc/〇〇6 • 形成開口 260以使凸塊可填入此開口 260内。接著，將凸塊25〇 .，成於開口 260内。接著，參考第8C ϋ，再移除該遮蔽層26卜 最後’再移除熱塑性材料層211上的導電層231。 m . 在本發明實施例令，形成此遮蔽層26】的方法包括（未圖示）：首 先在導電層231上形成遮蔽層26卜而於此時，遮蔽層261亦會形 成於第6B圖.的開口 23〇内；接著，利用微影製程而於遮蔽層曰 • 2成對應於開口 230的光阻圖案，而此圖案在對應於開口 23〇 〜疋無光阻的；接著’以㈣製程而移除開日23Q内的遮蔽層 261，因而形成第8Λ圖中的開口 26〇。 曰 1本發明實施例中’形成前述開口的方法為：微影、#刻、雷射 方^機械式鑽孔、或其他形成開口的技術。將凸塊填入開口的 人為.網版印刷（se職priming )法、鋼版印刷法（缝u ’ mg)、沉浸法（動㈤、或其他凸塊形成法。 ^ 的是’在本發明實施例中，在填人凸塊250於開口後’可 回流（refl0w)製程以使凸塊25〇更能填滿開口。此外， 7B圖的步驟時’如果凸塊材料亦形成於麵性材料層 ◎ 可在回流製程之前或之後，移除這凸塊材料（未圖示）θ。 261&1 丁關於第8B圖的步驟時，如果凸塊材料亦形成於遮蔽層 寸，可在移除遮蔽層261之前先移除這凸塊材料。 的ίΐ方法’可得到本發明實施例的晶片’此晶片的主 、。集‘.、，員不在第9Α圖中的裸晶截面28中。亦即，本發明的晶片 1336913 VIT06-0069I00-TW 21278twf.doc/006 包括：一個基底282、一個絕緣層191、〜乂 :及至少一個凸塊組件，而且每個凸二 =::料層211)之間存有—個導電層…第心
見第9A圖。在本發明實施例的晶片架構中，基底282可包括 體電路區域（未圖示）、-底座區域183、及—導電組件182。二 導電組件182可有-接觸端部⑻，此接觸端部181凸出至絕緣爲 19卜而端部181用於和其他基底（例如：晶片）進行電性接觸"。 應注意的是，接觸端部181可設置於絕緣層191中，或接觸端部 181可設置於絕緣層19ι中且穿越絕緣層191 (未圖示），或此接 觸端部181可延伸至熱塑性材料層211 (未圖示）。此外，接觸端 部18]與凸塊組件28〇之間亦可有一個導電層231。 在本發明實施例中，上述的底座區域可為矽、或其他半導體材料 等所構成。上述的導電組件可為鋁、金、銅、鎳、鎢、其他金屬、 或合金等所構成。上述的導電層可為凸塊底層金屬（UBM)、金屬 層、多層金屬層、合金層、或多層合金層。 見第11圖、第13圖、及第15圖。基於本發明實施例的晶片’本 發明更提出此晶片的應用實施例。以下將進一步敘述其構造及方 法0 見第10圖。其顯示本發明實施例的晶片（31、32)。曰曰片31上有 至少一個接觸組件（3]】、3】2、3】3)，而晶片32上有至少一個接 12 1336913
VlT06-〇〇69iO〇-TW 21278twf.doc/006 :=3广Μ2、323 )。在第10时，箭頭代表將二罐合 的[4程，而接觸組件川對應於接觸組件321，接觸 丨2 對應於接觸組件322，接觸組件3丨3對應於接觸組件切。 見^丨圖。在_第1Q _壓合製程之後，本發明實施例的晶 ^應用即產生。此晶片雜包括：至少—個前 3丨(如第'圖所示)’而這些晶片職 313、321、322、323)，而在晶片31上至少一個接 = 組件川)能對應到晶片32上的一個接： 件32卜而接觸組件3〗丨與接觸組件321之間是結合的。 在關於第1G圖及第U圖的實施例中，接觸組件（3u、3i2、3i3、 321 ' 322、323)是由凸塊所構成。 =f圖。其顯示本發明實施綱“ 34及-個基底35 (如關 於弟2圖的戴面13或如關於第3圖的截面17的基底）。晶片％ 上有至少-個接觸組件（34卜342、343)，而基底％上有至少一 個接觸(35卜352、353)。在第〗2圖中，箭頭代表將晶片34 及基底35 [ 口的愿合製程，而接觸組件Μ〗對應於接觸端部划， 接觸組件342對應於接觸端部352，接觸組件343對應於接觸端部 3 〇 見第13 ®。在第u _壓合製程之後，本發明實施例的晶 片應用即產生。此晶片架構36包括：至少—個前述的、本發明實 施例的晶片34(如第12圖所示）、以及至少一個前述的基底％(如 1336913
VnO6-0069100-TW 21278twf.doc/006 第2圖及第3圖所示），而這晶片34上有多數個接寧耕、 342、343) ’且這基底35上有多數個接觸端部（351 ,、如）。 ::外，在晶片34上，至少一個接觸組件（例如：接觸組件如） 能對應到基底35上的一個接觸戚邱μ 1 . 端部别之間是結合的接編351，而接觸組㈣與接觸 ===實施例中’接觸_，， =圖曰。其顯示本發明實施例的晶片37及—個具有接觸塾的 曰曰片。日日片37上有至少-個接觸組件（371、372、373 ),而晶 这有至少—個接觸組件（381、382、383 )。在第14圖中， 表將晶片37及38壓合的壓合製程，而接觸組件371對應 饼If Γ件381，接觸組件372對應於翻組件382，接觸組件373 妾觸組件383。在本發明實施例中，接觸組件38卜382、 383等可為一接觸墊。
15圖。在關於第14圖的壓合製程之後，本發明實施例的晶 ^應用即產生。此晶片架構39包括：至少-個前述的、本發明的 曰曰片37 (如帛14圖所示）、以及至少一個前述的具有接觸墊的晶 片38 ’而晶片37上有數個接觸組件（37]、372、373)，且晶片 〒上有多數個接觸墊（381、382、383 )。此外，在晶片37上，至 〆個接觸組件（例如：接觸組件371 )能對應到晶片38上的-個接觸塾381，而接觸組件371與接觸墊381之間是結合的。 1336913 V1TO0-OO69I0O-TW 21278iwf.doc/006 在關於第1 〇圖至第15圖的實施例中’接觸組件311、312、313、 32卜 322、323、34卜 342、343、37卜 372、及 373 等可由凸塊 材料所構成。 Α . 在本發明實施例中，上述的壓合製程可包括如下的步驟。將多數 個本發明的晶片壓合。加熱使熱塑性材料層變成黏彈性的。繼續 加熱至屬於不同晶片的、對應的接觸組件（或接觸組件，或連接 φ 墊）的表面開始接合。最後，將晶片降溫。 在關於第1G圖至第〗5圖的實施财，本發啊在晶圓上實施以 外’亦可在晶圓上的裸晶被切割成單—的晶片之後實施。 由實施例中使用的熱塑性材料，因而當前 料層的形狀’以補償因凸塊材料的結合所產生的== =然本發明已以較佳實施例揭露如上，然其並非 作二者，在不脫離本發明之精神和範圍二當; 專利範圍所界ί::準因此’本發明之保護_^^^ 【圖式簡單說明】 1336913
Vrr〇6-()069]〇〇-TW 21278twf.doc/006 第1A圖至第1C圖為本發明實施例所提供的晶圓。 第2A圖及第2B圖為本發明實施例所提供的晶圓。 ‘ 第3A圖及第3B圖為本發明實施例所提供的晶圓。 • 第4A圖至第4C圖、第5A圖至第5C圖、第6A圖及第6B圖、 • 第7A圖至第7B圖、第8A圖至第8C圖等為本發明實施例的晶片 製造方法。 第9A圖及第9B圖為本發明實施例的晶片。 φ 第10圖及第u圖為本發明實施例所提供的晶片的應用。 第丨2圖及第13圖為本發明實施例所提供的晶片的應用。 第Η圖及第15圖為本發明實施例所提供的晶片的應用。 【主要元件符號說明】 . 10、15、16、17、20、2卜 22、23、24、25、28 :晶圓 101、11 :裸晶 102 :晶圓正面 111、112、161、381、382、383 :接觸墊 • 丨2、13、18、19、20 :裸晶截面 , 121、164、182 :導電組件 122、 162 :積體電路區域 123、 163、183 :底座區域 3Π、312、313、321、322、323、34卜 342、343、37】、372、373 : 接觸組件 131、14卜 166、181、351、352、353 :接觸端部 152 :晶圓的背面 191 :絕緣層 16 1336913 V1T06-0069I00-TW 21278twf.doc/006 2(M、220、230、260 :開口 211 :熱塑性材料層 231 :導電層 250 :凸塊 261 :遮蔽層 282、35 :基底 280 :凸塊組件

Claims (1)

  1. 叫6913 99-4-23 十、申請專利範圍： L 一種晶片的製造方法，其至少包括： 提供一基底，其中該基底具有至少一個導 之sni:基底’且該導電組件具有凸出於該基底 形成一絕緣層於該基底之背部上； 形成至少一個第一開口於該絕緣層上，豆 口對應於該接觸端部； 第-開 形成一熱塑性材料層於該絕緣層上； 第少—個第二開σ於該熱塑性材料層上，其中該 弟一開口對應於該第一開口； /、τ 乂 形成一導電層於該第一開口及該第二開口内； 成-第til凸塊材料於該第—開σ及該第二開口内，以構 不 ΘΒ /η 9 晶該熱紐材料層的黏彈性及該凸塊材料使該第一 a兴一弟二晶片壓合。 2. 利_第1項所述之⑼的製造方法，其中形成 “第開口的步驟包括微影及蝕刻製程。 該第1項所述之晶片的製造方法，其中形成 開口的步驟包括鑽孔製程。 4· ΐ第申=圍第1項所述之晶片的製造方法，盆中形成 一開的步驟包括微影及蝕刻製程。，、 ㈣第1項所述之晶片的製造方法，Α中形成 第一開口的步驟包括鑽孔製程。 & 〃干械 18 99-4-23 圍第1項所述之晶片的製造方法，其中形成 '^導電層的步驟包括沉積製程。 mim11所仏㈣製織，其中形成 電層於該熱塑性材料層、該第—開口與該第二開口 的侧壁、及該接觸端部等上； 形成一遮蔽層於該熱塑性材料層上。 w⑽賴織，其更包括： 移除該熱塑性材料層上的該導電層。 其更包 10·如申請專利範圍第8項所述之晶片的製造方法， 括.移除該遮蔽層上的該凸塊材料。 11枯範圍第1G項所述之晶片的製造方法，复h 括.於移除該遮蔽層上的該凸塊材料之前，施以1流g包 專利範圍第1項所述之晶片的製造方法，龙中犯 該導電層的步驟更包括： ，、中形成 形成一導電層於該熱塑性材料層、該第一 的側壁、及該接觸端部等上；以及 開、该第二開口 移除該熱塑性材料層上的該導電層。 19 I32S6913 99-4-23 13,如申請專利範圍第12項所述之晶片的製造方法，其更包 •移除該熱塑性材料層上的該凸塊材料。 K如申請專利範圍第13項所述之晶片的製造方法，其更包 •在移除該熱塑性材料層上的該凸塊材料之前， 一回 流製程。 15·如申請專利範圍第1項所述之晶片的製造方法，其更包 括·施以一回流製程。 • ^申。胃專利範®第1項所述之晶片的製造方法，其中形成 該凸塊材料的步驟包括印刷製程。 、 利範圍第1項所述之晶片的製造方法，其中形成 h凸塊材料的步驟包括沉浸製程。 18. —種晶片，其至少包括： 件穿’其具有至少—個導電組件，其中，該導電組 :越該基底’且該導電組件具有凸出於該基底之背部的一 一絕緣層，其置於該基底之背部上，且罝古$ +加 -開口 ’其中至少—個該端部設置於該第—^ ^一 一熱塑性材料層，其置於該 ， 個第二開口’其中至少-個第-開口 具ί至少一 一導電層，其置於該第-開口及^第；7開口下； 上；以及 μ第一開口的側壁 開口^凸塊材料，其形成於至少一組該第―開口及該第二 20 99-4-23 其中當該晶片盥—笙-曰u r人I 料層的黏彈性及該^材壓合時’透過該熱塑性材 ㈣簡财賴以與該帛二⑼彼此接 19·如申請專利範㈣18項 一積體電路區域及—底座區^之“、中絲底更包括. 20導如體申材=_18蝴㈣，綱基底是由半 21由如金申屬==18細㈣，鱗電組件是 22.如申請專利範圍第18項 部分的該端部。 江之曰日片其中该絕緣層覆蓋 開口的 2Ht利範圍第18項所述之晶片，其中該第” 乾圍大於該端部的範圍。 τ茨第一開口 皆有其 24對如應=^=第18項所述之其中該端部 塑性材料 25.層如的輯⑽’其中該煞 項所述之晶片’其中該導電層是由 導電層是由 27.如申請專利_第18項所述之“，其中該 21 29 99-4-23 夕數個層金屬層所構成。 8.如申請專利範圍第】8項所 成於該導電層之上。 、 曰曰片，其中該凸塊材料形 •如申請專利範圍第1S項所述之 該端部之間有該導電層。 a曰片’其中該凸塊材料與 3〇·_^種^對晶料架構，其至少包括： 弟一晶片’其至少包括： t - ' * 件具有巧卿—基㈣部導電組 -::㈣③屯上丄 於至❻第—接觸“對應 杜二第一導電層，其置於該第-端部和該第H Γ第一絕緣層侧-熱塑性材料4』， -第，其具有至少—個第二接觸 其中，透過該第一熱塑性材料層黏 觸組件直接與該第一接觸組件壓的轉性使得該第二接 31^=ΐ=:項所述之晶她片的架構，其中 一第二基底，其具有至少—個黛-第二導電組件具有一第-端邻，而#^一導電組件，其中，該 弟一 w而該苐二端部凸出於該基底丨 22 1336913 99-4-23 -第二絕緣層，其置於該第二基. 一第二熱塑性材料層，其置於該筮一， -第-導電層，其置於該第二^ j緣層上；以及 該第二絕緣層、與該第二熱難材料第二接觸組件、 其中該第二接觸組件對應於至少—個該^二端部。 .4申％項所述之晶片對晶片的架構，龙中 該第一日日片更至少包括：―第二基m ^其中 導其中’該第二導電組件具有^二端 一端部凸出於該基底。 而該第 33. 4申Ϊ專利範圍第3〇項所述之晶片對晶片的架構，其中 ㈣一接_且件為-接觸墊。
    23
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