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TWI319121B - Positive resist composition and method for forming resist pattern - Google Patents

Positive resist composition and method for forming resist pattern

Info

Publication number
TWI319121B
TWI319121B TW95118489A TW95118489A TWI319121B TW I319121 B TWI319121 B TW I319121B TW 95118489 A TW95118489 A TW 95118489A TW 95118489 A TW95118489 A TW 95118489A TW I319121 B TWI319121 B TW I319121B
Authority
TW
Taiwan
Prior art keywords
forming
resist pattern
resist composition
positive
positive resist
Prior art date
Application number
TW95118489A
Other languages
English (en)
Other versions
TW200707108A (en
Inventor
Kazuhito Sasaki
Hiroaki Shimizu
Shinichi Kohno
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200707108A publication Critical patent/TW200707108A/zh
Application granted granted Critical
Publication of TWI319121B publication Critical patent/TWI319121B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW95118489A 2005-06-14 2006-05-24 Positive resist composition and method for forming resist pattern TWI319121B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005173315A JP2006349800A (ja) 2005-06-14 2005-06-14 ポジ型レジスト組成物およびレジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200707108A TW200707108A (en) 2007-02-16
TWI319121B true TWI319121B (en) 2010-01-01

Family

ID=37532106

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95118489A TWI319121B (en) 2005-06-14 2006-05-24 Positive resist composition and method for forming resist pattern

Country Status (3)

Country Link
JP (1) JP2006349800A (zh)
TW (1) TWI319121B (zh)
WO (1) WO2006134739A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4871718B2 (ja) * 2005-12-27 2012-02-08 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP4818882B2 (ja) * 2006-10-31 2011-11-16 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP5165227B2 (ja) 2006-10-31 2013-03-21 東京応化工業株式会社 化合物および高分子化合物
US8105747B2 (en) 2006-10-31 2012-01-31 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method of forming resist pattern
JP5548406B2 (ja) * 2008-08-22 2014-07-16 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物
JP5470053B2 (ja) 2010-01-05 2014-04-16 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法
JP6002378B2 (ja) 2011-11-24 2016-10-05 東京応化工業株式会社 高分子化合物の製造方法
US8795948B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and polymeric compound
US8795947B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000336121A (ja) * 1998-11-02 2000-12-05 Shin Etsu Chem Co Ltd 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
JP3895224B2 (ja) * 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP2004233953A (ja) * 2002-12-02 2004-08-19 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物
JP4360836B2 (ja) * 2003-06-04 2009-11-11 富士フイルム株式会社 ポジ型レジスト組成物
JP4772288B2 (ja) * 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP2005010488A (ja) * 2003-06-19 2005-01-13 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物
JP4188265B2 (ja) * 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP2005258362A (ja) * 2004-02-12 2005-09-22 Jsr Corp 共重合体およびそれを用いた感放射線性樹脂組成物

Also Published As

Publication number Publication date
TW200707108A (en) 2007-02-16
JP2006349800A (ja) 2006-12-28
WO2006134739A1 (ja) 2006-12-21

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