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TWI319121B - Positive resist composition and method for forming resist pattern - Google Patents

Positive resist composition and method for forming resist pattern

Info

Publication number
TWI319121B
TWI319121B TW95118489A TW95118489A TWI319121B TW I319121 B TWI319121 B TW I319121B TW 95118489 A TW95118489 A TW 95118489A TW 95118489 A TW95118489 A TW 95118489A TW I319121 B TWI319121 B TW I319121B
Authority
TW
Taiwan
Prior art keywords
forming
resist pattern
resist composition
positive
positive resist
Prior art date
Application number
TW95118489A
Other languages
Chinese (zh)
Other versions
TW200707108A (en
Inventor
Kazuhito Sasaki
Hiroaki Shimizu
Shinichi Kohno
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200707108A publication Critical patent/TW200707108A/en
Application granted granted Critical
Publication of TWI319121B publication Critical patent/TWI319121B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW95118489A 2005-06-14 2006-05-24 Positive resist composition and method for forming resist pattern TWI319121B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005173315A JP2006349800A (en) 2005-06-14 2005-06-14 Positive resist composition and method for forming resist pattern

Publications (2)

Publication Number Publication Date
TW200707108A TW200707108A (en) 2007-02-16
TWI319121B true TWI319121B (en) 2010-01-01

Family

ID=37532106

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95118489A TWI319121B (en) 2005-06-14 2006-05-24 Positive resist composition and method for forming resist pattern

Country Status (3)

Country Link
JP (1) JP2006349800A (en)
TW (1) TWI319121B (en)
WO (1) WO2006134739A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4871718B2 (en) * 2005-12-27 2012-02-08 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
WO2008053697A1 (en) * 2006-10-31 2008-05-08 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for formation of resist pattern
JP4818882B2 (en) * 2006-10-31 2011-11-16 東京応化工業株式会社 Positive resist composition and resist pattern forming method
JP5165227B2 (en) 2006-10-31 2013-03-21 東京応化工業株式会社 Compounds and polymer compounds
JP5548406B2 (en) * 2008-08-22 2014-07-16 東京応化工業株式会社 Positive resist composition, resist pattern forming method, polymer compound
JP5470053B2 (en) 2010-01-05 2014-04-16 東京応化工業株式会社 Positive resist composition and resist pattern forming method
JP6002378B2 (en) 2011-11-24 2016-10-05 東京応化工業株式会社 Method for producing polymer compound
US8795947B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US8795948B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and polymeric compound

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000336121A (en) * 1998-11-02 2000-12-05 Shin Etsu Chem Co Ltd New ester compound, high polymer compound, resist material and pattern-forming method
JP3895224B2 (en) * 2001-12-03 2007-03-22 東京応化工業株式会社 Positive resist composition and resist pattern forming method using the same
JP2004233953A (en) * 2002-12-02 2004-08-19 Tokyo Ohka Kogyo Co Ltd Positive type resist composition
JP4360836B2 (en) * 2003-06-04 2009-11-11 富士フイルム株式会社 Positive resist composition
JP4772288B2 (en) * 2003-06-05 2011-09-14 東京応化工業株式会社 Resin for photoresist composition, photoresist composition, and resist pattern forming method
JP2005010488A (en) * 2003-06-19 2005-01-13 Tokyo Ohka Kogyo Co Ltd Positive resist composition
JP4188265B2 (en) * 2003-10-23 2008-11-26 東京応化工業株式会社 Resist composition and resist pattern forming method
JP2005258362A (en) * 2004-02-12 2005-09-22 Jsr Corp Copolymer and radiation sensitive resin composition using same

Also Published As

Publication number Publication date
TW200707108A (en) 2007-02-16
WO2006134739A1 (en) 2006-12-21
JP2006349800A (en) 2006-12-28

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