TWI232501B - Method of manufacturing electrothermal film - Google Patents

Abstract

A method of manufacturing an electrothermal film is disclosed. First, an insulating substrate is applied, and a first metal layer is formed on the insulating substrate by sputtering. Then, a dielectric layer is formed on the first metal layer by sputtering. And a second metal layer is formed on the dielectric layer by sputtering. Finally, a passivation layer is formed on the second metal layer by plasma spraying or chemical vapor deposition. Wherein the manufacturing method by plasma spraying can increase the manufacturing speed of the electrothermal film and reduce the manufacturing cost of the electrothermal film. And the manufacturing method by chemical vapor deposition can apply an electrothermal film in high quality.

Description

1232501 V. Description of the invention π) Technical guidance ^ The present invention relates to a method for manufacturing an electric heating film, and in particular: 种: a method using plasma spraying (piasma spraying) or a gas phase / child product ( Chemical Vapor Deposition (CVD)) to manufacture the protective layer (Passivation) on the electrothermal film / ir 〇

^ JULM produces electric heating devices commonly used in the market, mainly through the 埶 !! resistance effect to convert the incoming electrical energy into thermal energy, and use the generated electricity ^ ί for heating purposes. The working principle of the electric heating device will hardly come out of the pottery: the common electric heating device mainly has electric capture with positive temperature coefficient,), or the resistance wire is formed by winding the resistance wire. The temperature coefficient ceramic heater converts electrical energy into saturation; the heat capacity of the superheater (—c— " will tend to be the same as usual. F: the resistance of the heater becomes higher and the heating power is reduced. . And the resistance linear electric 埶 device is high;;! = Production: processing is very complicated, so ΐ = using an electric heating film as a plus ::: Li Er now: the thermal device uses more power per unit density; = .〃, uk provides better heating power and reduces layer conductors ;, disks are composed of insulating substrates, and are arranged on the insulating substrates for external-layer protective layers. Sputtering shovel fs =, ; 1. Processing accuracy and uniformity of electrical layers, it is known to use the method of Sputtering to make electric heating films.

11696twf.Ptd Page 7 12325501 V. Description of the invention (2) On the surface of an insulating substrate, the conductive layer, the dielectric layer, and the final core method are used to alternately forge multiple layers of high-temperature oxidation treatment. Finish the work and carry on the protective layer as described in the 'Protective Layer's Sequence #', and the role of the protective layer is to protect the bottom layer = 1b v body layer and dielectric layer thickness, the body layer to avoid the oxidation of the conductor layer: layer: and isolate the outside And the guide way, although it can make the thickness of the film evenly: to form a base coating:. ^ .N 0,. 7 ^ gg degree is better ', but due to sputter deposition deposition; \ /, 22 (Mother seconds) is relatively slow, and the use of a target material during sputtering is required to increase production time and waste production costs. Intrinsics of the Invention Therefore, an object of the present invention is to provide a method for manufacturing an electrothermal film, which is suitable for accelerating the formation speed of the protective layer on the electrothermal film. Another object of the present invention is to provide a method for manufacturing an electrothermal film, which is suitable for providing an electrothermal film with better material properties. Forming at least one dielectric layer. Then, on the dielectric layer, the same guideline is based on the above purpose. The present invention proposes a method for manufacturing an electric heating film. First, an insulating substrate is provided, and the insulating substrate is, for example, Tibetan-Wei's A first conductive layer is formed. Next, a second conductor layer is formed on the first conductor layer in a manner of, for example, splashing = shovel. Finally, it is formed in the manner of (Chemical Vapor Deposition) .....: First, an insulating substrate is provided, and plasma spraying (plasma spraying) is performed on the insulating substrate, for example, w_gas ^ / fb ^ spraying) or chemical vapor deposition ir______ η ..., ·... > Protection 1 •-………… ~ 〇 ^ In addition, the present invention also proposes another method of manufacturing an electrothermal film 'method—providing an insulation Substrate, and on the insulating substrate, for example, cool 4 gas phase

A conductor layer is formed. Next, spray plasma on the conductor layer

11696twf.ptd Page 8 1232501 V. Description of the invention (3) The method of deposition is as described above at a high temperature, is at a high temperature on the above surface, such as the surface. In the present invention, ceramics, micro-nickel nickel / metal alloy inscriptions, or dioxide-based spray coating methods have a protective layer ratio of several micro-films. The electric power of the present invention is used to form the electric heating speed. Compared with the electricity (Crystal 1 protective layer. This target material thus forms a protective layer. In the manufacturing method of the electrothermal film, the plasma spraying process is performed under an atmospheric pressure environment, and the chemical vapor deposition process is: a low-pressure environment In the manufacturing method of the electrothermal film, a flat layer can be formed before the surface sputtering of the insulating substrate, and the material of the flat layer includes oxygen cutting during the planarization. In the method, the material of the insulating substrate is crystal glass or glass ceramic. In the manufacturing method of Mingzhi's electric heating film, the material of the conductor layer includes', and the material of the dielectric layer and the protective layer includes titanium nitride and nitride. The present invention The manufacturing method of the electrothermal film is to form a protective layer on the electrothermal film by using plasma. Under the premise that the processing layer of the protective layer is not required to be fine, plasma spraying is used to shape the past—using sputtering The method has a faster deposition rate (cometers per second). In terms of production speed, the electrothermal method of the present invention will be faster than the conventional electrothermal film manufacturing method. In addition, the manufacturing method of the thermal film can be made more chemically. Vapor deposition method: a protective layer on top of which the chemical vapor deposition of the thin film generation slurry is sprayed slowly, but it can provide a crystallinity (inity) and an ideal ratio (St〇ichi〇metry). 2. The manufacturing method of the electric heating film of the present invention is less expensive than the conventional manufacturing method of the electric heating film because it does not need to be used.

11696twf.ptd Page 9 12325201 V. Description of the Invention (4) In order to make the above and other objects, features, and comprehensibility of the present invention, a number of preferred embodiments are given below, in conjunction with the drawings = detailed description is as follows: Please refer to Figures ia to 1f in order for the implementation method, which shows the manufacturing flow chart of the first film of the present invention. Kind of Electric Heating First, as shown in FIG. 1A, an insulating base material 102 is provided, such as ceramic, glass-ceramic, or glass-ceramic. Because the surface of the United States and the United States is an uneven surface, in this way, the flatness of the film layer on the mine will come. So, as shown in Fig. 1B, you can first use the method of sputtering, for example? A flat layer 104 is formed on the surface 2 to planarize the insulating base: it is oxide. Among them, the material of the flat layer 104 is, for example, oxidized stone or its subsequent, as shown in FIG. 1C, FIG. 1D, and FIG. 1E. A first conductive layer and a second conductive layer 110 are sequentially formed on the flat layer 104 by, for example, sputtering. The material of the first conductor layer and the first body layer 1 ^ 10 is, for example, a nickel / chromium alloy, and the material of the dielectric layer 8 is, for example, titanium nitride, aluminum nitride, or silicon dioxide. Finally, as shown in FIG. 1F, plasma spraying is performed on a high-temperature, often-second conductive layer 110 by a plasma spray method; The material is, for example, titanium nitride, aluminum nitride, or silicon dioxide. Please refer to FIGS. 2A to 2D in sequence, which shows a manufacturing flow chart of the present film, in which the above-mentioned electric type is actually used. ”, ,, T The above-mentioned examples are different in this embodiment

11696twf.ptd Page 10 1232501 V. Description of the Invention (5) The electrothermal film only includes a -layer conductive layer and does not have a dielectric layer. Baixian, as shown in Figure 2A, provides an insulating substrate 202. Next, as shown in FIG. 2B, a flat layer 204 is first formed on the surface of the insulating base material 200 in the manner of base plating, for example, to planarize the surface of the insulating base material 202. Then, as shown in FIG. 2F of FIG. 2C, a conductor layer 206 is formed on the flat layer 204 in the manner of, for example, a clock. Finally, as shown in Fig. 2D, a protective layer 208 is formed on the conductor layer 2006 by plasma spraying at a high temperature and normal pressure %%. In addition, 'based on the above-mentioned preferred embodiment, in the method for manufacturing an electrothermal film of the present invention', a chemical vapor deposition method can be used instead of the above-mentioned plasma spraying method to form a protective layer on the electrothermal film. However, since the other implementation steps are the same as the above-mentioned preferred embodiments, I will not repeat them here. I will not repeat them here. I will use the electric protection layer as the 0 value to form a single layer into a family. 1 Different structural layers. The method of manufacturing the electrothermal film of the present invention firstly forms a flat layer on the insulation, planarizes the surface of the insulating substrate, and then sequentially coats the conductor layer and the dielectric layer, and finally forms a layer on the top layer. On the conductor layer, the finish of the electrothermal film of the present invention is obtained. The above-mentioned dielectric layer of the electrothermal film is not limited to a single structure, and the material can be made of titanium nitride, aluminum nitride, and silicon dioxide. group. In addition, the insulating substrate is not only the same as the above embodiment, but also has a layer of a conductor layer, or a first conductor layer + a dielectric layer + a second conductor layer. The electrothermal film of the present invention can be matched with multiple layers of dielectric layers and conductors. @ ^ Change the electrical characteristics of the electrothermal film to correspond to various heating rings

ll696tw f.Ptd Page 11 V. Description of the invention ⑹ and the medium; the requirements of working accuracy and average degree of hooking do not need to reach the manufacturing method; by electricity :; J standards, so the electrothermal film of the present invention is made through Plasma spray coating ::;: method to form a protective layer on an electrothermal film, sometimes 裎. In addition, the speed of the protective layer is shortened by the electric speed: J, so that the dry material of the present invention can save costs. In addition, Hi-Ming can also reduce the manufacturing cost of the electrothermal film. The formation of the protective film of the electrothermal film is a slow way to form a thermal spray coating, but the formation speed of the film is much faster than the electrical fff ^ ^ ~, the crystallinity and ideal ratio of the protective film; §卩 t two r spray * or Xi k base plating and other methods are #. During the deposition of the value #, the two phases of the master and father, the entire electricity is = 疋, and the action of annealing and annealing is performed, so that the conductor layer is eliminated to eliminate the unevenness of its composition. The crystalline structure of the body layer, and although the present invention has been disclosed as a preferred embodiment, the following: restrict the present invention 'any person skilled in this art will not depart from it: it is not within the scope of God and it can be done a little Changes and retouching, the scope of intensive protection of the invention. When the attached towel is defined, please define the scope of the patent as the guarantee of the present invention. 1232501 The diagram is a brief description of the first A ~ 1 F diagram showing the first type of electric heating of the invention Film manufacturing flowchart. Figures 2A to 2D are drawings showing the manufacturing process of the second type of electrothermal film of the present invention. [Illustration of Graphical Indications] 102: Insulating substrate 102a: Surface of insulating substrate 104: Flat layer 106: First conductive layer 108: Dielectric layer 110: Second conductive layer 11 2: Protective layer 2 0 2: Insulating substrate 2 0 4: Flat layer 20 6: Conductor layer 2 0 8: Protective layer

11696twf.ptd Page 13

Claims (1)

1232501 , Including: Six, the scope of patent application 1. A method of manufacturing an electric heating film to provide an insulating substrate; forming a first 〆 conductor on the insulating substrate =, forming 奚 less 〆 two on the first conductor layer. Layer 'forms a second conductor layer on the dielectric layer' and forms a protective layer on the second conductor layer by plasma spraying. 2. The method for manufacturing an electrothermal film according to item 丨 in the scope of the patent application, wherein the method of forming the third conductor layer on the insulating substrate includes sputtering. 3. The method for manufacturing an electrothermal film according to item 1 of the scope of patent application, wherein the method of forming the dielectric layer on the first conductor layer includes sputtering. 4. The manufacturing method of the electrothermal film according to item 丨 of the patent application scope, wherein the method of forming the second conductor layer on the dielectric layer includes a money key. 5. The manufacturing method of the electrothermal film as described in item 1 of the scope of patent application, wherein the plasma spraying process is performed in a high-pressure, normal-pressure environment. 6. The method for manufacturing an electrothermal film according to item 1 of the scope of the patent application, wherein a flat layer is formed on the surface of the insulating substrate to planarize the surface of the insulating substrate. 7. The manufacturing method of the electrothermal film according to item 6 of the scope of the patent application, wherein the material of the flat layer includes silicon dioxide. 8. The manufacturing method of the electrothermal film according to item 1 of the scope of the patent application, wherein the material of the insulating substrate includes ceramic, glass-ceramic or glass ceramic. 9. The manufacturing method of the electrothermal film according to item 1 of the scope of the patent application, wherein the material of the first conductor layer includes nickel / chromium alloy. 1 0 · The manufacturing method of the electrothermal film as described in item 1 of the scope of patent application, H696twf .ptd Page 14 1232501 The material of the second conductor layer includes a nickel / chromium alloy. The method for manufacturing an electrothermal film according to item 1 of the scope of patent application, wherein the material of the hafnium dielectric layer includes titanium nitride, aluminum nitride, or silicon dioxide. · The manufacturing method of the electrothermal film as described in item 1 of the patent scope of Shenyang, the material of the Zhongming Baozun layer includes iridium nitride, aluminum nitride or silicon dioxide. 1 3 · A method for manufacturing an electric heating film, at least comprising: providing an insulating substrate; forming a conductor layer on the insulating substrate; and forming a protective layer on the conductor layer by plasma spraying. 14. The method for manufacturing an electrothermal film according to item 13 of the scope of patent application, wherein the method of forming the conductor layer on the insulating substrate includes sputtering. 1 5 · The manufacturing method of the electrothermal film according to item 13 of the scope of the patent application, wherein the plasma spraying process is performed under a high temperature and normal pressure environment. 16. The method for manufacturing an electrothermal film according to item 3 of the scope of the patent application, wherein a flat layer is formed on the surface of the insulating substrate to planarize the surface of the insulating substrate. 17. The manufacturing method of the electrothermal film as described in item 15 of the scope of the patent application, wherein the material of the flat layer includes dioxide dioxide 1 8 Ί $, glass-ceramic or glass-ceramic method, in which the material of the insulating substrate includes ceramics, micro-ceramics, and the electric heating film maker 19 · The electrical method as described in the scope of the patent application No. 丨 3 Material of the conductor layer includes nickel / cold alloy 1232501 ____________________ ^ ----- ------ — VI. Application for patent scope 20 · The manufacturing method of the electric & thermal film as described in the patent application scope 13 顼, wherein the material of the protective layer includes nitride銶, aluminum oxide or dioxide 〇21 · —A method for manufacturing an electric heating film, providing an insulating substrate; forming a first 〆 conductor layer on the insulating substrate; forming at least a first conductor layer on the first conductor layer; A dielectric layer; forming a second conductor layer on the dielectric layer; and forming a protective layer on the second conductor layer by chemical vapor deposition. ', 2 2 · The manufacturing method of the electrothermal film according to item 21 of the scope of the patent application, wherein the method of forming the first conductor layer on the insulating substrate includes sputtering. 23. The method of manufacturing an electrothermal film according to item 21 of the scope of patent application, wherein the method of forming the dielectric layer on the first conductor layer includes sputtering. 24. The method of manufacturing an electrothermal film according to item 21 of the scope of patent application, wherein the method of forming the second conductor layer on the dielectric layer includes sputtering. 25. The method for manufacturing an electrothermal film according to item 21 of the scope of the patent application, wherein the chemical vapor deposition process is performed in a high temperature and low pressure environment. 2 6 · The manufacturing method of the electrothermal film according to item 21 of the scope of the patent application, wherein a flat layer is formed on the surface of the insulating base material to flatten 11696twf.ptd Page 16 1232501 ------------- __________ 6. Scope of Patent Application The surface of the insulating substrate is standardized. 2 7 · The manufacturing method of the electrothermal film according to item 26 of the scope of the patent application, wherein the material of the flat layer includes silicon dioxide. 28. The manufacturing method of the electrothermal film according to item 21 of the scope of the patent application, wherein the material of the insulating substrate includes ceramic, glass-ceramic or glass ceramic. 29. The manufacturing method of the electrothermal film according to item 21 of the scope of the patent application, wherein the material of the first conductor layer includes a nickel / chromium alloy. 30. The method of manufacturing an electrothermal film according to item 21 of the scope of the patent application, wherein the material of the second conductor layer includes a nickel / chromium alloy. 31. The method for manufacturing an electrothermal film according to item 21 of the scope of patent application, wherein the material of the dielectric layer includes titanium nitride, aluminum nitride, or silica. 3 2. The manufacturing method of the electrothermal film according to item 21 of the scope of the patent application, wherein the material of the protective layer includes titanium nitride, aluminum nitride, or silica. 33. A method for manufacturing an electrothermal film, at least comprising: providing an insulating substrate; forming a conductor layer on the insulating substrate; and forming a protective layer on the conductor layer by chemical vapor deposition. 34. The method for manufacturing an electrothermal film according to item 33 of the scope of the patent application, wherein the method of forming the conductor layer on the insulating substrate includes sputtering. 35. The method for manufacturing an electrothermal film according to item 33 of the scope of the patent application, wherein the chemical vapor deposition process is performed under a high temperature and low pressure environment. 11696twf.ptd Page 17 1232501 6. Scope of Patent Application 36. The method of manufacturing an electrothermal film according to item 33 of the scope of the patent application, wherein a flat layer is formed on the surface of the insulating substrate to planarize the surface of the insulating substrate. 3 7. The method for manufacturing an electrothermal film according to item 35 of the scope of patent application, wherein the material of the flat layer includes silicon dioxide. 3 8. The method for manufacturing an electrothermal film according to item 33 of the scope of the patent application, wherein the material of the insulating substrate includes ceramic, glass-ceramic or glass ceramic. 39. The method for manufacturing an electrothermal film according to item 33 of the scope of the patent application, wherein the material of the conductive layer includes a nickel / chromium alloy. 40. The method for manufacturing an electrothermal film according to item 33 of the scope of patent application, wherein the material of the protective layer includes titanium nitride, aluminum nitride, or silica. 11696twf.ptd Page 18