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TW506098B - Packaging method and structure of photodetective semiconductor element - Google Patents

Packaging method and structure of photodetective semiconductor element Download PDF

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Publication number
TW506098B
TW506098B TW090125873A TW90125873A TW506098B TW 506098 B TW506098 B TW 506098B TW 090125873 A TW090125873 A TW 090125873A TW 90125873 A TW90125873 A TW 90125873A TW 506098 B TW506098 B TW 506098B
Authority
TW
Taiwan
Prior art keywords
wafer
light
carrier
transparent
sensing
Prior art date
Application number
TW090125873A
Other languages
Chinese (zh)
Inventor
Shin-Nan Chen
Original Assignee
Taiwan Ic Packaging Corp
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Publication date
Application filed by Taiwan Ic Packaging Corp filed Critical Taiwan Ic Packaging Corp
Priority to TW090125873A priority Critical patent/TW506098B/en
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Publication of TW506098B publication Critical patent/TW506098B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

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  • Solid State Image Pick-Up Elements (AREA)

Abstract

The invention relates to a packaging method and structure of a photodetective semiconductor element, in which the packaging method of the photodetective semiconductor element is completed by covering the corresponding photodetective region of each die unit on a wafer with a transparent material, cutting the wafer into small units of chips and then bonding the chip onto a carrier for further electrical connection, and fixing an encapsulant around the chip and transparent material on the carrier. With the above method, the photodetective region of the chip can be prevented from being contaminated in the packaging process of the element by capping the transparent material on the photodetective region of the chip at the wafer processing stage, and the structure in which the photodetective region of the chip is totally enclosed by the transparent material, carrier and encapsulant in the surroundings can be used to prevent the water vapor intrusion.

Description

A7 B7 五、發明說明( =明係關於—種光感測半導體元件之構裝方法及結 、扣—種避免晶片光感測區於構裝製程中易被污染, 免水讀人影響晶片感測功能半導體^件構裝方法 及結構設計。 /先前具有光感測功用的半導體元件,主要係使用一中 間形成凹槽的陶莞基板,該陶莞基板於其凹槽中且佈置複 ^自槽底延伸至基板底面電路引腳,另於凹槽中央固設一 日曰片产日日片上各1/0接點與基板上對應之引腳作電性連 接’復於基板頂緣固設一透明蓋板將晶片密封於内,晶片 上之感測區正對透明蓋板,而構成一具光感測 體元件。 守 雨揭用陶竟材料構裝之光感測半導體元件,雖以苴良 好的密封性’而具有不吸渔、環境因素對其影響小m穩 定性佳等優點’然其陶莞基板在製造上有加工不易及成本 偏高等缺點,料品質要求不高之—般性電子產品而言, 貫不符經濟效益。 因此’有人對於-般性、品質要求較不嚴苛的電子產 品所使用之光感測半導體元件即採用環氧樹脂材質製成的 基板作為載體,取代前揭高成本之陶究基板,如第三圖所 示,該半導體Tt件具有-環氧樹脂材f之基板(2〇), 基板(2 0 )上具有複數自頂面經側端延伸至底面的導電 引腳’且於基板(2 0 )上配合模具固設—環狀膠體堤牆 (2 1),再於基板(20)相對膠體堤牆(21)内之 中間處黏著—晶片(22) ’復以金屬線連接於晶片(2 3 ^06098 A7 B7A7 B7 V. Description of the invention (= Ming is about—a method for constructing light-sensing semiconductor components and knots, buckles—a way to prevent the light-sensing area of the wafer from being easily contaminated during the fabrication process, and avoiding the influence of water on reading the wafer Method and structure design for measuring functional semiconductor components. / Semiconductor components with previous photo-sensing functions mainly use a ceramic substrate with a groove formed in the middle. The bottom of the groove extends to the circuit pins on the bottom surface of the substrate, and the center of the groove is fixed with a 1/0 contact on the day-to-day and day-to-day films. The 1/0 contacts on the substrate are electrically connected to the corresponding pins on the substrate. A transparent cover plate seals the wafer inside, and the sensing area on the wafer faces the transparent cover plate to form a light-sensing body element. Shouyujie's light-sensing semiconductor element constructed of ceramic materials, although苴 Good tightness, but has the advantages of not attracting fish, environmental factors have little influence on it, and good stability. However, its ceramic substrates have the disadvantages of difficult processing and high cost in manufacturing, and the quality of materials is not high-generally For electronic products, it is not economical Therefore, the light sensing semiconductor elements used by some people for electronic products with less stringent quality requirements use substrates made of epoxy resin as a carrier, instead of exposing high-cost ceramic substrates before they are uncovered. As shown in the third figure, the semiconductor Tt component has a substrate (20) of epoxy resin f, and the substrate (20) has a plurality of conductive pins extending from the top surface to the bottom surface through the side ends and the substrate (2 0) is fixed with a mold—annular colloidal bank (2 1), and then adhered to the middle of the substrate (20) opposite to the colloidal bank (21) —the wafer (22) is connected to the metal wire by Chip (2 3 ^ 06098 A7 B7

X 五、發明說明( )上各I/O接點與基板(2 〇 )上對應導電引腳之 構成電性連接,次於膠體堤牆(21)頂緣固設—透= 反(^ 3 )將晶片(2 2 )密封於内,並使晶# ( 2 2 ) 上之光感測區正對透明蓋板(2 3、, 功用之半導體元件。 23)而構成-具光感測 惟’雨揭半導體元件雖使用環氧樹脂基板取代陶 反=载體,而能進一步提供—種製造容易且製造成本ς f V體70件構裝結構,然而,該使用環氧樹脂基板之半 ^體凡件與前述使用㈣基板之半導體元件於其構裝過程 、。,經常發生晶片光感測區被污染,且該半導體元件易因 X潮而影響其光感測功能及可靠度等情事,因為: s □=導!元件於構裝過程中’元件使用之晶片係歷經 曰曰0月面研磨、晶圓切割成晶片、晶片黏著於基板上、烘 =、以金屬線連接於w上各I/Q接點與基板對應之導電 腳間’於基板上之膠體堤牆頂緣固設透明蓋板等多道程 曰:在此多道構裝程序中,因微粒或其他污染物易沾附於 曰曰片上之光感測區’而會影響該半導體元件之可靠度。 由於晶片上之光感測區係關係該半導體元件品 =2使':持該!導體元件應有之品質,確保該產 …-通$會於盍設透明蓋板前之構裝過程中,辦 以及表面清潔等多項程序,導致該半導體心 又兀、才間延長’且對光感測區進行表面清潔時,該光 易:損壞,又因其構裝程序增加及複雜化,徒增該 + ¥體7L件之構裳成本,降低其產品競爭力。 f紙張尺度彻f關家鮮(CNS)A4-^ (210 x 297 公釐) 川〇的8 A7 五、發明說明(> ) &又f半導體元件結構中,因晶片位於透明蓋板及膠體 i疋牆構築的中空區間中,由於環氧樹脂材質之基板具有吸 水性,因此,當環氧樹基板吸收過多的水氣後,水氣會直 接料至元件内部的中空區間,導致晶片上之感測區及透 二板内面义潮,而影響晶片應有的光感測性能或導致其 失效,而降低該元件的可靠度。 /、 有鑑於此,本發明之主要目的即在於提供一種可以有 效避免晶片之光感測區於構裝過程被污染,且可免除不必 要的表面清潔等程序之光感測半導體元件構裝方法,且利 用依據該構裝方法所產製的半導體元件構裝結構,使其具 有阻斷水氣滲入元件内部之功用。 為達4揭目的,本發明所提出之光感測半導體元件之 構裝方法,主要係於晶圓上相對於各晶片單元上之光感測 區先行覆設-透明物,次進行晶圓切割成晶片,晶片黏著 於載體上’曰曰片與載體電性連接,再於載體上相對於晶片 及透明物周邊固設一封膠’完成該具光感測功用之半導體 兀件構I製程,藉此,利用於晶圓階段先行於晶片之光感 測區覆設透明物,作為光感測區之保護層,使該元件於構 裝製程中,晶片光感測區可免於被污染,並減少不必要的 表面清潔等程序。 本發明依據前述構裝方法所設計之光感測半導體元件 之構裝結構’係於一載體上黏著晶片,該晶片上之光感測 區上覆设一透明物,且晶片各1/〇接點與載體上對應之端 子電性連接,又於載體上相對於晶片及透明物周邊固 -------------I --- (請先閱讀背面之注意事項再填寫本頁) . -線· 5 506098 (1 1)晶片單元 (13)晶片 (1 5)載體 (1 7)封膠 (21)膠體堤牆 (2 3 )透明蓋板 A7 五、發明說明(产) f膠’而構成一具有光感測功用的半導體元件,藉此,使 5亥曰曰片上之光感測在透明物、載體及封膠於其上下及周邊 處完全包覆,而產生阻斷水氣侵人之功用者。 為使貴審查委員能進_步瞭解本發明之結構特徵及 其他目的,茲附以圖式詳細說明如后: (一) 圖式部份: 第一圖A〜G:係本發明之構裝流程示意圖。 第二圖:係本發明使用透明勝體結合透明玻璃作為透明物 之兀件剖面不意圖。 第三圖:係習用使用環氧樹脂基板之光感測半導體元件剖 面不意圖。 (二) 圖號部份: (1 0 )晶〜圓 (1 2 )光感測區 (1 4 )透明物 (16)玻璃 (2 0 )基板 (2 2 )晶片 請參閱第一圖所示有關本發明光感測半導體元件之構 裝方法具體實施例,其包括: 一⑽提供一晶圓(1〇),該晶圓(10)具有複數個晶 元單元(1 1 )’各晶元單元(1 1 )上具有光感測區 (1 2 )及位於光感測區(丄2 )外圍1/0接點,如第一 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ^ I III i I------^ (請先閱讀背面之注意事項再填寫本頁) B7 五、發明說明(j) 圖A所示; 晶元單元(1 1 )之光感 測區 於晶圓(1 0 )上各 (1 2)上覆蓋一透明物( 將晶圓(10)依據 V如弟一圖輯示,· ,該载體(1 5 )具有複數自頂 立的晶片單元(1 1),如曰第—早70 (1 D大小切割成獨 提供一载體(i 5 圖C所示,· 面延伸至底面的端子; 將晶片單元(1 1 ) 黏著於載體(1 5)上·如^則£ ( 1 2 )朝上之型態 如弟一圖D所示; =屬:連接晶片單元(11)上 (1 5 )上對應的端子間 /、戟篮 示;以及 &子間構成電性連接,如第-圖£所 於載艟(15)上相對於曰H蒂— (1 4) I蠢卜、1 ( 1 1 )及透明物 ^ 一包覆金屬線之封膠(17),如第— 因G戶二不’完成該具光感測功用之半導體元件構裝製程。 前述覆蓋於晶片單元(11)光感剩區(12)上之 透明物(1 4 )可使用單一透明膠材。 前述於載體(15)上相對於晶片(13)及透明物 肖邊固设封膠(17)步驟之前’可先將一透明 玻璃(1 6 )固設於透明膠材之透明物(丄4)上,再八 封膠(1 7)同時包覆於該透明玻璃(丄6 )周邊。7 前述於透明玻璃(i 6 )固設於透日轉材之透明物 (1 4)上之步驟’可接續於晶圓(χ 〇 (11)之光感測區(⑴上覆蓋透明物:;曰= 7 A7 五、發明說明($ ) 後,或可接續於晶圓(丄〇 ) 或可接績於晶片(13)黏著於載 3)之後, 可接續於晶片(1 3 )盥截f。 上之後,或 “ …與载體(15)電性連接之後。 本發明依據前述構裝方法所制 結構係包括: 續衣成的先感測半導體元件 一載體(15) ,1上1古^ 端子; ,、上具有後數自頂面延伸至底面的X V. Description of the invention The electrical connection between each I / O contact on () and the corresponding conductive pin on the substrate (20) is inferior to the top edge of the colloidal bank (21)-transparent = reverse (^ 3 ) The wafer (2 2) is sealed inside, and the light sensing area on the crystal # (2 2) is directly facing the transparent cover plate (2 3 ,, a functional semiconductor element. 23) and constituted-with light sensing only 'While Yujie semiconductor components use epoxy substrates instead of ceramic substrates, they can further provide a 70-piece mounting structure that is easy and cost-effective to manufacture. However, half of the epoxy substrates should be used. The assembly process of the semiconductor components and the aforementioned semiconductor components using a rhenium substrate is as follows. It often happens that the light sensing area of the wafer is contaminated, and the semiconductor element is liable to affect its light sensing function and reliability due to X wave, because: s □ = guide! During the assembly process of the component, the wafer used by the component has been polished on the surface of the moon, the wafer is cut into wafers, the wafer is adhered to the substrate, baked, and the I / Q contacts on the w are connected to the substrate with metal wires. Corresponding conductive feet, a transparent cover is fixed on the top edge of the colloidal bank wall on the substrate, etc .: In this multi-channel assembly process, particles or other pollutants are easily attached to the light on the film. The measurement area 'will affect the reliability of the semiconductor device. Due to the light-sensing relationship on the wafer, this semiconductor element product = 2 so ': hold it! The quality of the conductor components should ensure that the product ...-Through the process of installation before the transparent cover is installed, as well as a number of procedures such as surface cleaning, etc., leading to the semiconductor's heartiness, time extension, and light When the surface of the sensing area is cleaned, the light is easy to be damaged, and because of the increase and complexity of its assembly process, the construction cost of this + ¥ 7L piece is increased, reducing its product competitiveness. f Paper size is completely f. Guan Jiaxian (CNS) A4- ^ (210 x 297 mm) 8 A7 chuan 〇 5. Description of the invention (>) & f In the semiconductor device structure, because the wafer is located in the transparent cover and In the hollow section constructed by the colloidal i 疋 wall, since the substrate made of epoxy resin has water absorption, when the epoxy tree substrate absorbs too much moisture, the moisture will directly enter the hollow section inside the component, causing the wafer to The sensing area and the inner surface of the second board will affect the light sensing performance of the chip or cause it to fail, reducing the reliability of the device. In view of this, the main object of the present invention is to provide a light-sensing semiconductor element assembly method that can effectively prevent the light-sensing area of a wafer from being contaminated during the assembly process and can eliminate unnecessary surface cleaning procedures. Moreover, the semiconductor device mounting structure produced according to the mounting method is used to have the function of blocking moisture from penetrating into the inside of the device. In order to achieve the objective of four disclosures, the method for constructing a light-sensing semiconductor element provided by the present invention is mainly based on a wafer being firstly covered with a transparent object relative to the light-sensing area on each wafer unit, and then being subjected to wafer cutting. The wafer is adhered to the carrier, and the wafer is electrically connected to the carrier, and then a piece of glue is fixed on the carrier relative to the periphery of the wafer and the transparent object to complete the semiconductor element structure I process with light sensing function. In this way, a transparent object is used to cover the light sensing area of the wafer at the wafer stage as a protective layer of the light sensing area, so that the device's light sensing area can be protected from contamination during the fabrication process. And reduce unnecessary surface cleaning procedures. According to the present invention, the structure of the light-sensing semiconductor element designed according to the aforementioned mounting method is a wafer adhered on a carrier, and a transparent object is placed on the light-sensing area on the wafer. The point is electrically connected to the corresponding terminal on the carrier, and it is fixed on the carrier relative to the periphery of the chip and the transparent object ------------- I --- (Please read the precautions on the back before filling (This page).-Line · 5 506098 (1 1) Wafer unit (13) Wafer (1 5) Carrier (1 7) Sealant (21) Colloid wall (2 3) Transparent cover A7 V. Description of the invention (production ) F glue 'to form a semiconductor element with light sensing function, so that the light sensing on the film can be completely covered on the top, bottom, and periphery of the transparent object, the carrier, and the sealant, resulting in resistance. Those who cut off water and gas invade people. In order to enable your reviewing committee to further understand the structural features and other purposes of the present invention, detailed drawings are attached as follows: (1) Schematic part: The first pictures A ~ G: the structure of the invention Flow diagram. The second figure: the cross section of the present invention using a transparent body combined with transparent glass as a transparent object is not intended. Figure 3: The cross section of a conventional light-sensing semiconductor device using an epoxy substrate is not intended. (2) Part of drawing number: (1 0) crystal to round (1 2) light sensing area (1 4) transparent object (16) glass (2 0) substrate (2 2) wafer Please refer to the first figure A specific embodiment of a method for assembling a light-sensing semiconductor device according to the present invention includes: providing a wafer (10), the wafer (10) having a plurality of wafer units (1 1) ' The unit (1 1) has a light-sensing area (1 2) and 1/0 contacts located on the periphery of the light-sensing area (丄 2). For example, the first paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ^ I III i I ------ ^ (Please read the notes on the back before filling this page) B7 V. Description of the invention (j) shown in Figure A; of the wafer unit (1 1) The light sensing area is covered with a transparent object on each of the wafers (1 2) (showing the wafer (10) according to V as shown in the figure, ·, the carrier (1 5) has a plurality of The top wafer unit (1 1), as described in the first-early 70 (1 D size cut to provide a single carrier (i 5 shown in Figure C, the terminals extending from the surface to the bottom surface; the wafer unit (1 1) Adhesion to the carrier (1 5) · If ^ the £ (1 2) up As shown in Figure D of Figure 1; = genus: the corresponding terminals on the chip unit (11) (1 5) are connected to each other; and the & child constitutes an electrical connection, as shown in Figure- Contained on (15) is relative to H. 蒂 (1 4) I stupid, 1 (1 1) and transparent ^ a sealant (17) covering the metal wire, as the first-because G households are not ' The semiconductor device assembly process with light sensing function is completed. The transparent object (1 4) covered on the light-sensing area (12) of the wafer unit (11) can use a single transparent glue. The carrier (15) Before the step of fixing the sealant (17) with respect to the chip (13) and the transparent edge of the transparent object, a transparent glass (16) can be fixed on the transparent object (丄 4) of the transparent plastic material, and then eight Adhesive (1 7) covers the periphery of the transparent glass (丄 6) at the same time. 7 The aforementioned step of fixing the transparent glass (i 6) on the transparent object (1 4) of the day-to-day material can be connected to the wafer (Χ 〇 (11) of the light sensing area (⑴ is covered with a transparent object:; = = 7 A7) 5. After the description of the invention ($), it may be connected to the wafer (丄 〇) or may be connected to the wafer (13 ) After sticking to 3), you can It is connected to the chip (1 3) and then f. After it is connected, or "... is electrically connected to the carrier (15). The structure manufactured by the present invention according to the aforementioned assembly method includes: a first-sensing semiconductor element that is changed into a garment. A carrier (15), 1 on 1 ancient ^ terminal; ,, with the last number extending from the top surface to the bottom surface

上且右曰曰::兀(11) ’係黏固於載體(15)上,A 有-光❹m以及複數位於周邊的i/q接點,各ι/〇 接點且以金屬線與載體(丄5 ° 接· )上對應的柒子構成電性連 透月物(1 4)’係覆設於晶片光感測 上:以及 犏一封膠(17),係固設於載體上相對於晶片及透明 周邊亚包覆金屬線,而構成—具有光感測功用的半導體 元件。 别迷載體(1 5)可為具複數端子之軟板式基板或硬 式基板,或可為具有晶片座、複數導電引腳的金屬導線架 =,前述載體(1 5)為導線架時,其相對於晶片座與導 電引腳間之間隙以及相鄰引腳間之間隙充填有隔離膠體’ 而構成一平板狀載體。 前述透明物(14)可為單層透明膠體(圖未示), 或如第二圖所示,為覆設於晶片單i ( 1 1 )光感測區 (1 2 )之透明膠體結合覆設於透明膠體上之透明玻璃 本…張尺度適用中國國家標準(CNS)A4規格⑽X视公爱) Ί --------------Μ--- (請先閱讀背面之注意事項再填寫本頁) Ίδϋ»· -丨線· A7 A7 五、 發明說明(^ ) (16)組合。 於♦本么明之光感測半導體元件可結合其他電子元件裝配 遠甩路板上,且以載體底面之端子與電路板上之線路電性 接即可利用該元件巾晶片光感測區之感測作,將接 的影像資料轉換為數位信號輪出,而提供一具光感測功 用的半導體元件。 經由前述製程方法及結構特徵說明後,當可得知本發 明之特點至少包括有·· 1、在製程方面··本發明利用晶圓階段先行於晶片單 ^之光感測區覆設一透明物,作為光感測區之保護層,使 忒兀件於構袭製程中,晶片光感測區可免於被污染,減少 =要的表面清料程序,使構裝程序簡化、縮短元件構 衣時間、降·低成本,進而提供其產品競爭力。 ―又本發明因透明物先行覆設於晶片光感測區上,再進 行其他構裝程序,故縱使有微粒或其他污染物亦僅沾附於 透明物外表面或晶片不影響功能之表面上,如此,不僅可 易於進行表面清潔作業,且可完全避免晶片光感測區 壞。 、 2、在元件結構方面:本發明係令晶片由透明物、 體及封膠於其上下面及周邊完全包覆,使晶片上之光感到 區事先被安全隔離密封,使該元件構裝完成後,縱使1載 體吸收過多的水氣,也因封膝、晶片、透明物全面性阻隔 無法直接〜至^上之光感測區’ Μ有效阻斷水氣= 入影響其性能之可能’使該光導體元件維持應有光感測^ 本紙張尺度適用中國國家標準(CNS〉A4規格(210 X 297公Μ ) i _ ; 裝 - - ------訂---------線 (請先閱讀背面之注意事項再填寫本頁) Ί 506098 A7 五、發明說明(夕) 能,進而提昇該元件的可靠度。 綜上所述’本發明藉其創新的構裝方法及結構,確可 提供一種較既有半導體元件構裳製程及結構更具產業利用 性之設計,因此,本發明設計符合新型專利之要件,爰依 法具文提出申請。 10 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) I I I I · I I I — III · I I I I I I — * (請先閱讀背面之注意事項再填寫本頁)The top and right are: "Wu (11) 'is glued to the carrier (15), A has -guang❹m and a plurality of i / q contacts located at the periphery, each ι / 〇 contact and a metal wire and the carrier (丄 5 ° ··) The corresponding tadpoles form an electrically connected lunar moon (1 4) ', which is placed on the light sensor of the chip: and a piece of glue (17), which is fixed on the carrier. Sub-cladding metal wires on the wafer and transparent perimeter to form—a semiconductor device with light sensing function. The carrier (1 5) can be a soft board substrate or a rigid substrate with a plurality of terminals, or it can be a metal lead frame with a wafer holder and a plurality of conductive pins =. When the aforementioned carrier (1 5) is a lead frame, the relative The gap between the wafer base and the conductive pins and the gap between adjacent pins are filled with an isolation gel to form a flat-plate-shaped carrier. The aforementioned transparent object (14) may be a single-layer transparent colloid (not shown), or, as shown in the second figure, a transparent colloid bonding coating overlying the light-sensing area (1 2) of the wafer i (1 1). Transparent glass set on transparent colloid ... The scale is applicable to Chinese National Standard (CNS) A4 specifications (X as public love) Ί -------------- M --- (Please read the back first Please note this page, please fill in this page) Ίδϋ »·-丨 line · A7 A7 V. Description of the invention (^) (16) Combination. The light-sensing semiconductor element can be combined with other electronic components on a long-distance circuit board, and the terminals on the bottom of the carrier are electrically connected to the circuit on the circuit board to use the sensor's chip light-sensing area. In the test, the received image data is converted into digital signals for rotation, and a semiconductor device with a light sensing function is provided. After the foregoing process method and structural feature descriptions, it can be known that the features of the present invention include at least: 1. In terms of manufacturing process, the present invention utilizes the wafer stage to place a transparent light sensing area on the wafer sheet ^ to provide a transparency. The object is used as a protective layer for the light-sensing area, so that the components can be prevented from being contaminated during the formation process. The light-sensing area of the wafer can be prevented from being contaminated. Clothing time, cost reduction, and low cost, which in turn provides product competitiveness. ―Also, in the present invention, because the transparent object is first covered on the light sensing area of the wafer, and then other construction procedures are performed, even if particles or other pollutants are only attached to the outer surface of the transparent object or the surface of the wafer that does not affect the function In this way, not only the surface cleaning operation can be easily performed, but also the damage of the light sensing area of the wafer can be completely avoided. 2. In terms of component structure: The present invention completely covers the wafer by a transparent object, a body, and a sealant on the top, bottom, and periphery thereof, so that the light-sensing area on the wafer is safely isolated and sealed in advance, so that the component structure is completed. Later, even if the 1 carrier absorbs too much water vapor, it cannot be directly blocked by the comprehensive sealing of the knees, wafers, and transparent objects. The light sensing area of the upper surface 'M effectively blocks water vapor = it may affect its performance.' The photoconductor element should have light sensing ^ This paper size is in accordance with Chinese national standard (CNS> A4 specification (210 X 297mm) i _); installed------- order ------- --- line (please read the precautions on the back before filling this page) Ί 506098 A7 V. Description of the invention (evening), which can further improve the reliability of the element. In summary, the invention uses its innovative construction method. And the structure can indeed provide a design that is more industrially usable than the existing semiconductor device fabrication process and structure. Therefore, the design of the present invention complies with the requirements of the new patent and is filed in accordance with the law. 10 This paper standard applies to the country of China Standard (CNS) A4 size (210 x 297 male %) I I I I · I I I — III · I I I I I I — * (Please read the notes on the back before filling out this page)

Claims (1)

DUO曙DUO Shu 經 濟 部 智 慧 財 產 局 員 工 消 費 合 社 印 製 1 種光感’則半導體元件之構裝方法,其包括·· 提供一晶圓,該晶圓具有複數個晶片單元,各晶片單 疋上具有光感測區及位於光感測區外圍ί/0接點; 於晶圓上各晶片單元之光感測區上覆蓋一透明物; 將晶圓依據晶片單元大小切割成獨立的晶片; 提供一載體,該載體具有複數自頂面延伸至底面的端 將晶片以光感測區朝上之型態黏著於載體上; 以金屬線連接晶片相對於光感測區周邊的數I /〇接點 與載體上對應的端子間構成電性連接;以及 於載體上相對於晶片及透明物周邊固設一包覆金屬線 之封膠’完光感測功用之半導體元件構裝製程。 2、i 專利範圍第1項所述之光感測半導體元件 之構衣方法,其中覆蓋於晶片光感測區上之透明物 可使用透明 如申請專圍第1或2項所述之光感測半導| 薄,其中於載體上相對於晶片及透巧 物周邊固設封膠步p雙|前,可先將一透明玻璃固設於透^ 物上,再令封膠同時f覆於透明玻璃周邊 4、如 之構裝方法> 驟’接續於的 後。 元件之構裝方法 _專利範圍第3項所述之光感測半導體元〈 ,其中於透明玻璃固設於透明物之: 秦各晶片單元之光感測區上覆蓋透明物: 5、如申凊專利範圍第3項所述之光感測半導體元1 11 1 ------ 請先閱讀背面之注吏事項再填寫本頁) 訂- •線 申請專利範 圍 法1^",其中透明玻璃固設於透明物之牛驟 接績於晶圓切_晶片之後。 ㉗之步驟, 6如利範圍第3項所述之光感測丰 _ 之構裝方法,其中透明玻璃固設於透明物之:元件 接續於晶片黏著之載體之後利==述之*感測半導體元件 /、中透月玻璃固設於陶物之步驟, 之構裝方法 接續於晶片與 8、一_ 驟 經濟部智慧財產局員工消費合作社印製 [,電性連接之後。 測半導體元件之構裝結 載體,其上具有複數自頂面延伸至_的 一晶片,係黏固於載體上,其上具有_ 以複數位於周邊的_點,各__金 上對應的端子構成電性連接; L、戟體 透月物,係覆設於晶片光感測區上:以及 冬‘固°又於載體上相對於晶片及透明物周邊並 包覆金屬線,而構成一具有光感測功用的半導體元件。 9請專利範圍第8項所述之光感測半導體元件 之構裝念®^結構,其中透明物為單層透明膠體, ^申凊專利範圍第8項所述之光感測半導體元 件之構裝結構,其中透明物為覆設於晶片、光感測區 之透明膠體及覆設於透 測半導體元件之構裝 之軟板式基板。 如申請專第8St ttAj 利 包括: 體上之玻璃組合。 9或10項所述之光感 結構,其中載體為具複數端子 12 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 X 297公釐) I 裝--- (請先閱讀背面之注*'事項再填寫本頁) r、 —線1· 506098 A8 B8 C8 _____ D8 申請專利範圍p未導1 如中請專礙範丨圍第8 測半導體元件之構裝 之硬式基板 1 3、如申請專利 測半導體元件之構裝4 1丨 9或1 〇項所述之光感 結構’其中載體為具複數端子 t人 座、複數導電引腳的金 與導電引腳間之間隙以 體,而構成一平板狀載體 9或1〇項所述之光感 L結構,其中載體為具有晶片 I線架’該導線架相對於晶片座 菱物鄰引腳間之間隙充填有隔離膠 第8 — --- (請先閱讀背面、之注**事項再填寫本頁) 訂·. -線The Intellectual Property Bureau of the Ministry of Economic Affairs' employee co-operative company printed a light sensor. The method of constructing semiconductor components includes providing a wafer with a plurality of wafer units, and each wafer unit has a light sensor. The measuring area and the ί / 0 contact located at the periphery of the light sensing area; covering the light sensing area of each wafer unit on the wafer with a transparent object; cutting the wafer into independent wafers according to the size of the wafer unit; providing a carrier, The carrier has a plurality of ends extending from the top surface to the bottom surface, and the chip is adhered to the carrier with the light sensing area facing upward; a metal wire is used to connect the number I / 0 contact of the wafer with respect to the periphery of the light sensing area and the carrier. An electrical connection is formed between the corresponding terminals on the carrier; and a semiconductor element assembly process is completed on the carrier, which is opposite to the wafer and the periphery of the transparent object, with a sealant covering the metal wire to complete the light sensing function. 2. The method for fabricating a light-sensing semiconductor device as described in item 1 of the patent scope, wherein the transparent object covering the light-sensing area of the wafer can be transparent as described in the application section 1 or 2 Measuring semiconductor | thin, in which the sealing step p double is fixed on the carrier relative to the periphery of the chip and the transparent object. Before that, a transparent glass can be fixed on the transparent object, and then the sealing compound f is simultaneously covered on the transparent object. Peripheral of transparent glass 4. Installation method as described above. Component construction method _ The light-sensing semiconductor element described in item 3 of the patent scope, wherein the transparent glass is fixed to the transparent object: the light-sensing area of each chip unit is covered with a transparent object: 5.光 Light-sensing semiconductor element described in item 3 of the patent scope 1 11 1 ------ Please read the notes on the back before filling out this page) Order-• Line Application Patent Scope Law 1 ^ ", of which The transparent glass is fixed on the transparent object, and the result is immediately after the wafer is cut. Step 6, 6 The light sensing method described in item 3 of the Lee range, wherein the transparent glass is fixed on the transparent object: the component is connected to the carrier where the wafer is attached. The step of fixing the semiconductor element / moisture glass to the pottery is continued after the chip is printed with the consumer cooperative of the employee of the Intellectual Property Bureau of the Ministry of Economic Affairs [8, after the electrical connection. The structured junction carrier for testing semiconductor components has a plurality of wafers extending from the top surface to _, which are fixed on the carrier, and have _ points located at the periphery with a plurality of _, corresponding terminals on each __ gold. The electrical connection is formed; L, the halberd lunar lunar object is arranged on the light sensing area of the wafer: and the winter's solid angle is covered on the carrier with respect to the periphery of the wafer and the transparent object and is covered with metal wires, so as to have a Semiconductor device for light sensing function. 9Please refer to the structure of the light-sensing semiconductor device described in item 8 of the patent scope, where the transparent object is a single-layer transparent colloid, and the structure of the light-sensing semiconductor device described in item 8 of the patent scope The mounting structure is a transparent object which is a transparent colloid covering a wafer, a light-sensing area, and a soft-plate substrate covering a semiconductor device which is transparently mounted. Such as applying for the special 8St ttAj benefits include: glass combination on the body. The light-sensing structure described in 9 or 10, wherein the carrier is a plurality of terminals. 12 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (21 × X 297 mm). I installed --- (Please read the note on the back first * 'Please fill in this page again) r 、 —line 1 · 506098 A8 B8 C8 _____ D8 patent application scope p not introductory 1 If you are in the middle of the problem, please refrain from the scope of the 8th test semiconductor component structure of the rigid substrate 1 3, such as Apply for a patent to test the light-sensitive structure described in Item 4 1 丨 9 or 10 of the semiconductor device structure, wherein the carrier is a body with a plurality of terminals t-seat, a plurality of conductive pins, and the gap between the conductive pins. Form a flat-shaped carrier of the light-sensing L structure as described in item 9 or 10, wherein the carrier is a wafer with a wire frame of I. The gap between the lead frame and the adjacent pins of the wafer holder is filled with a spacer 8-- -(Please read the notes on the back and notes ** before filling this page) 經濟部智慧財產局員工消費合作社印製 13 ‘紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 13 ‘Paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
TW090125873A 2001-10-19 2001-10-19 Packaging method and structure of photodetective semiconductor element TW506098B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108807296A (en) * 2017-04-28 2018-11-13 叶秀慧 Top has the chip-packaging structure and its manufacturing method of guide-joining plate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108807296A (en) * 2017-04-28 2018-11-13 叶秀慧 Top has the chip-packaging structure and its manufacturing method of guide-joining plate

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