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JP2008124160A - Semiconductor device, its manufacturing method and camera module with the same - Google Patents

Semiconductor device, its manufacturing method and camera module with the same Download PDF

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Publication number
JP2008124160A
JP2008124160A JP2006304645A JP2006304645A JP2008124160A JP 2008124160 A JP2008124160 A JP 2008124160A JP 2006304645 A JP2006304645 A JP 2006304645A JP 2006304645 A JP2006304645 A JP 2006304645A JP 2008124160 A JP2008124160 A JP 2008124160A
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Prior art keywords
resin
semiconductor device
moisture
lid
semiconductor element
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JP2006304645A
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Japanese (ja)
Inventor
Tetsumasa Maruo
哲正 丸尾
Tetsushi Nishio
哲史 西尾
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2006304645A priority Critical patent/JP2008124160A/en
Publication of JP2008124160A publication Critical patent/JP2008124160A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To make a semiconductor device such as a solid-state image sensor or the like compact and thin as well as ensure its moisture resistance. <P>SOLUTION: The semiconductor device is provided with a resin package 2 (supporting body) having a lead 1, an image sensing element 3 (semiconductor element) connected electrically to the lead 1, an optical transmission cover plate 7 (cover body) that is fitted to the image sensing element 3 as to cover the specified area of one main surface of the image sensing element 3, and a resin sealing part 15 that covers the lead 1 and the joint part of the image sensing element 3 and also covers the image sensing element 3 and the outer periphery of the optical transmission cover plate 7. The resin sealing part 15 is formed of a moisture-resistant resin material or a moisture absorbing material-containing resin material. In this case, the device is made thin, and if the moisture absorbing material-containing sealing resin is employed, water content is absorbed into the moisture absorbing material. If the moisture-resistant sealing resin is employed, the it is essentially hard to absorb moisture, thus preventing water content from permeating into the boundary between the resin sealing part 15 and the optical transmission cover plate 7. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体装置、その製造方法、およびそれを搭載したカメラモジュールに関し、特に、耐湿性を向上させるための技術に関する。   The present invention relates to a semiconductor device, a method for manufacturing the same, and a camera module on which the semiconductor device is mounted, and more particularly to a technique for improving moisture resistance.

従来の半導体装置に、ＣＣＤやＣＭＯＳ等の固体撮像素子を樹脂やセラミックで形成したパッケージ（容器）のキャビティ内に固着し、光透過性蓋板によって封止した固体撮像装置がある。   As a conventional semiconductor device, there is a solid-state imaging device in which a solid-state imaging device such as a CCD or CMOS is fixed in a cavity of a package (container) formed of resin or ceramic and sealed with a light-transmitting cover plate.

従来の固体撮像装置を図６に示す。リード部１を一体に設けた中空状の樹脂パッケージ２（プリモールド体）のダイアタッチ面に撮像素子３をダイボンド材料４によりダイボンドし、撮像素子３上の電極パッド（図示せず）とリード部１のインナーリード部５とを金属線６によりワイヤボンドし、撮像素子３の上方を覆う光透過性蓋板７を樹脂パッケージ２上に封着材料８により固定している。この際の封着材料８には一般的に熱硬化性樹脂や紫外線硬化性樹脂が用いられるが、耐湿性を向上させるために、シリカを含有させたものもある（特許文献１）。   A conventional solid-state imaging device is shown in FIG. An image pickup device 3 is die-bonded to a die attach surface of a hollow resin package 2 (premolded body) integrally provided with a lead portion 1 using a die bond material 4, and an electrode pad (not shown) on the image pickup device 3 and a lead portion. A light transmissive cover plate 7 covering the upper side of the image pickup device 3 is fixed on the resin package 2 with a sealing material 8. In this case, a thermosetting resin or an ultraviolet curable resin is generally used as the sealing material 8, but there is also a material containing silica in order to improve moisture resistance (Patent Document 1).

しかしこの固体撮像装置は、樹脂パッケージ２内に撮像素子３を配置して光透過性蓋板７により気密的に封止する構造であるため、光透過性蓋板７を搭載する樹脂パッケージ２の封着面には高い平坦度が要求される。また樹脂パッケージ２の内面と撮像素子３との間、および撮像素子３と光透過性蓋板７との間に隙間を設けているため、固体撮像装置が大きくなる。   However, since this solid-state imaging device has a structure in which the imaging element 3 is disposed in the resin package 2 and hermetically sealed by the light-transmitting cover plate 7, the resin package 2 on which the light-transmitting cover plate 7 is mounted. High flatness is required for the sealing surface. Moreover, since the clearance gap is provided between the inner surface of the resin package 2 and the image pick-up element 3, and between the image pick-up element 3 and the light-transmissive cover board 7, a solid-state image pickup device becomes large.

一方、図７に示すような薄型の固体撮像装置が提案されている。上述したのと同様の樹脂パッケージ２のダイアタッチ面に、光透過性蓋板７を接着剤９にて直接に貼り付けた撮像素子３をダイボンド材料４によりダイボンドし、撮像素子３上の電極パッド（図示せず）とリード部１のインナーリード部５とを金属線６によりワイヤボンドし、樹脂パッケージ２のキャビティ内に封止樹脂１０を塗布して、撮像素子３および光透過性蓋板７の外周側に充填し、金属線６を完全に被覆している。この際の封止樹脂１０としては液状のエポキシ樹脂が主に用いられる。   On the other hand, a thin solid-state imaging device as shown in FIG. 7 has been proposed. The image pickup device 3 in which the light-transmitting cover plate 7 is directly bonded to the die attach surface of the resin package 2 similar to that described above with the adhesive 9 is die-bonded with the die bond material 4, and the electrode pad on the image pickup device 3 is formed. (Not shown) and the inner lead part 5 of the lead part 1 are wire-bonded by a metal wire 6, and a sealing resin 10 is applied in the cavity of the resin package 2, so that the image pickup device 3 and the light-transmitting lid plate 7. The outer peripheral side of the metal wire 6 is completely covered. In this case, a liquid epoxy resin is mainly used as the sealing resin 10.

この固体撮像装置は、撮像素子３上に接着剤９にて直接に光透過性蓋板７を貼り付けることで薄型化を図るとともに、ワイヤボンド接合部を封止する封止樹脂１０を撮像素子３および光透過性蓋板７の外周側に充填することで、光透過性蓋板７の側面を遮光したものである。
特開平６−４９３３３号公報 In this solid-state imaging device, the light-transmitting cover plate 7 is directly attached to the imaging element 3 with an adhesive 9 to reduce the thickness, and the sealing resin 10 that seals the wire bond joint portion is used for the imaging element. 3 and the outer peripheral side of the light-transmitting cover plate 7 are filled with light so that the side surfaces of the light-transmitting cover plate 7 are shielded from light.
JP-A-6-49333

しかし図７に示した固体撮像装置では、薄型化はされるものの、封止樹脂１０が撮像素子３および光透過性蓋板７と直接に接するため、封止樹脂１０が吸湿したときに光透過性蓋板７との界面で剥離が起こり、それにより、或いは封止樹脂１０の吸湿の影響によって、光透過性蓋板７を撮像素子３に接着する接着剤９が吸湿して機能低下することがあり、固体撮像装置としては耐湿性が十分でないという問題があった。   However, in the solid-state imaging device shown in FIG. 7, the sealing resin 10 is in direct contact with the imaging element 3 and the light-transmitting cover plate 7 because the thickness is reduced. Peeling occurs at the interface with the transparent lid plate 7, or due to the moisture absorption of the sealing resin 10, the adhesive 9 that adheres the light-transmissive lid plate 7 to the image pickup device 3 absorbs moisture and deteriorates its function. There is a problem that the moisture resistance of the solid-state imaging device is not sufficient.

本発明は上記問題を解決するもので、固体撮像装置などの半導体装置を小型・薄型化しながら耐湿性を確保することを目的とする。   An object of the present invention is to solve the above-described problems and to ensure moisture resistance while reducing the size and thickness of a semiconductor device such as a solid-state imaging device.

上記課題を解決するために、本発明の半導体装置は、導体部を有する支持体と、前記導体部に電気的に接続して前記支持体上に搭載された半導体素子と、前記半導体素子上にその一主面の所定の領域を覆って搭載された蓋体と、前記導体部およびそれへの接続部を覆い且つ前記半導体素子および蓋体の外周面を覆った樹脂封止部とを有し、前記樹脂封止部が耐湿性樹脂材料あるいは吸湿材含有樹脂材料で形成されていることを特徴とする。   In order to solve the above problems, a semiconductor device of the present invention includes a support having a conductor portion, a semiconductor element electrically connected to the conductor portion and mounted on the support, and a semiconductor element on the semiconductor element. A lid that covers a predetermined region of the one main surface, and a resin sealing portion that covers the conductor and the connecting portion to the semiconductor element and the outer peripheral surface of the semiconductor element and the lid. The resin sealing portion is formed of a moisture-resistant resin material or a hygroscopic material-containing resin material.

上記構成によれば、半導体素子上に蓋体を搭載することで装置を薄型化しながら、吸湿材含有封止樹脂が用いられた場合は水分は吸湿材に吸収されてしまうため、あるいは耐湿性封止樹脂が用いられた場合はそれ自体が吸湿しにくいため、樹脂封止部と蓋体との界面への水分の浸入を抑えることができる。よって、樹脂封止部と蓋体との界面での剥離は起こり難く、蓋体を半導体素子に取り付けるのに用いられる接着剤の機能低下も起こり難く、半導体装置は耐湿性に優れることとなる。   According to the above configuration, the moisture is absorbed by the hygroscopic material when the hygroscopic material-containing sealing resin is used while the apparatus is thinned by mounting the lid on the semiconductor element, or the moisture-resistant sealing. When the stop resin is used, it is difficult for the resin itself to absorb moisture, so that moisture can be prevented from entering the interface between the resin sealing portion and the lid. Therefore, peeling at the interface between the resin sealing portion and the lid is unlikely to occur, the function of the adhesive used to attach the lid to the semiconductor element is unlikely to deteriorate, and the semiconductor device has excellent moisture resistance.

この構造は、半導体素子が光学素子であり、蓋体が光透過性蓋体であるときに特に好ましい。かかる構造の半導体装置、たとえば固体撮像装置などの光デバイスは、水分があると結露を生じるなど、品質に影響が出やすいからである。樹脂封止部は光透過性蓋体の側面を遮光する機能も果たす。   This structure is particularly preferable when the semiconductor element is an optical element and the lid is a light transmissive lid. This is because a semiconductor device having such a structure, for example, an optical device such as a solid-state imaging device, tends to affect quality, such as dew condensation when there is moisture. The resin sealing portion also functions to shield the side surface of the light transmissive lid.

支持体は、凹状あるいは平坦に形成されているものであってよい。平坦な支持体を用いれば、側壁が存在しない分、小型化が可能である。また支持体は、セラミックあるいは樹脂を基材として一部に導体部を配して形成されているか、または全体が導体材料にて所定のリード部を配して形成されているものであってよい。   The support may be concave or flat. If a flat support is used, it is possible to reduce the size because there is no side wall. Further, the support may be formed with ceramic or resin as a base material with a conductor portion disposed in part, or entirely formed with a predetermined lead portion made of a conductor material. .

本発明の半導体装置の製造方法は、半導体素子上にその一主面の所定の領域を覆う蓋体を搭載するとともに、前記半導体素子を、導体部を有する支持体上に前記導体部に電気的に接続させて搭載し、その後に、液状の耐湿性樹脂材料あるいは吸湿材含有樹脂材料を前記導体部およびそれへの接続部と前記半導体素子および蓋体の外周面に塗布して樹脂封止部を形成することを特徴とする。   According to a method of manufacturing a semiconductor device of the present invention, a lid covering a predetermined region of one main surface is mounted on a semiconductor element, and the semiconductor element is electrically connected to the conductor on a support having a conductor. Then, a liquid moisture-resistant resin material or a hygroscopic material-containing resin material is applied to the conductor portion and the connection portion to the conductor portion and the outer peripheral surface of the semiconductor element and the lid body, and the resin sealing portion It is characterized by forming.

光学素子と光透過性蓋体とを有した上記の半導体装置を搭載したカメラモジュールを構成することもできる。   A camera module on which the above-described semiconductor device having an optical element and a light-transmitting lid is mounted can also be configured.

本発明によれば、半導体素子に直接に蓋体を搭載し、支持体に搭載後の半導体素子の電気的接続部を封止するための樹脂封止部を、前記半導体素子および蓋体の外周面をも覆うように形成するとともに、この樹脂封止部の材料に、耐湿性封止樹脂あるいは吸湿材含有封止樹脂を用いるようにしたので、得られる半導体装置は、樹脂封止部と蓋体との界面への水分の浸入を抑えることができ、封止部と蓋体との界面での剥離は起こり難く、蓋体を半導体素子に取り付けた接着剤の機能低下も起こり難く、耐湿性に優れることとなる。よって、半導体装置が高温高湿環境下に置かれても水分の影響を低減でき、高い耐湿性、高い信頼性を確保することが可能であり、半導体装置を固体撮像装置として構成するときも好都合である。また、半導体素子に直接に蓋体を取り付けているので、装置の薄型化を実現することができ、平坦な支持体を用いれば小型化も図ることができる。   According to the present invention, the lid is directly mounted on the semiconductor element, and the resin sealing portion for sealing the electrical connection portion of the semiconductor element after mounting on the support is provided on the outer periphery of the semiconductor element and the lid. Since the surface of the resin sealing portion is formed and a moisture-resistant sealing resin or a hygroscopic material-containing sealing resin is used as the material of the resin sealing portion, the obtained semiconductor device includes a resin sealing portion and a lid. Moisture permeation to the interface with the body can be suppressed, peeling at the interface between the sealing part and the lid is unlikely to occur, and the function of the adhesive that attaches the lid to the semiconductor element is unlikely to occur. It will be excellent. Therefore, even when the semiconductor device is placed in a high-temperature and high-humidity environment, the influence of moisture can be reduced, and high moisture resistance and high reliability can be ensured. It is also convenient when the semiconductor device is configured as a solid-state imaging device. It is. Further, since the lid is directly attached to the semiconductor element, it is possible to reduce the thickness of the apparatus, and it is possible to reduce the size by using a flat support.

以下、本発明の実施の形態について図面を参照しながら説明する。各図においては、構成部材の厚みや長さ等は実際とは異なる図示しやすい寸法で表示している。また構成部材の内、電極や端子の個数は実際とは異なる図示しやすい数としている。各構成部材の材料も以下に挙げる材料に限定されるものではない。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each figure, the thickness, length, etc. of the constituent members are displayed in dimensions that are easy to show different from the actual figures. Of the constituent members, the number of electrodes and terminals is different from the actual number and is easy to show. The material of each constituent member is not limited to the materials listed below.

図１（ａ）は本発明の第１実施形態の半導体装置である固体撮像装置の断面図である。
この固体撮像装置は、導体部を有する支持体として、リード部１を有する凹状の樹脂パッケージ２を用いており、電極パッド（図示せず）を一主面に有した撮像素子３と、撮像素子３の一主面の所定の領域を覆って当該撮像素子３に取り付けられた光透過性蓋板７と、撮像素子３の電極パッドとリード部１のインナーリード部５とを電気的に接続した金属線６と、インナーリード部５および金属線６および撮像素子３の接続部分を覆い、且つ撮像素子３および光透過性蓋板７の外周面を覆った樹脂封止部１５とを有している。
９は接着剤、４はダイボンド材料である。 FIG. 1A is a cross-sectional view of a solid-state imaging device which is a semiconductor device according to the first embodiment of the present invention.
This solid-state imaging device uses a concave resin package 2 having a lead portion 1 as a support having a conductor portion, an imaging device 3 having an electrode pad (not shown) on one main surface, and an imaging device. 3 is electrically connected to the light-transmitting cover plate 7 attached to the image pickup device 3 so as to cover a predetermined region of one main surface of the image pickup device 3 and the inner lead portion 5 of the lead portion 1. A metal wire 6, and a resin sealing portion 15 that covers the inner lead portion 5, the connection portion of the metal wire 6 and the image pickup device 3, and covers the outer peripheral surfaces of the image pickup device 3 and the light-transmitting cover plate 7. Yes.
9 is an adhesive and 4 is a die-bonding material.

この固体撮像装置の大きな特徴は、樹脂封止部１５を形成している封止樹脂材料が、吸湿材含有樹脂材料であることである。この吸湿材含有樹脂材料においては、基材たる樹脂にはエポキシ樹脂（硬化剤や充填剤等も含まれる）などが用いられ、吸湿材には、多孔質二酸化ケイ素（吸湿フィラー、シリカゲル）、ゼオライト、高吸収性ポリマー（ポリアクリル酸系重合体等）などが用いられる。これらの吸湿材の含有量は、吸湿性能の発現が確認でき、尚且つ樹脂自体の流動性が確保できる量として０．５〜９０重量％であることが望ましい。吸湿材含有樹脂材料に代えて耐湿性樹脂材料、たとえばシリコーン樹脂、ビニール樹脂（共重合体）などを用いても構わない。   A major feature of this solid-state imaging device is that the sealing resin material forming the resin sealing portion 15 is a hygroscopic material-containing resin material. In this hygroscopic material-containing resin material, epoxy resin (including curing agents and fillers) is used as the base resin, and porous silicon dioxide (hygroscopic filler, silica gel), zeolite is used as the hygroscopic material. Superabsorbent polymers (polyacrylic acid polymers and the like) are used. The content of these hygroscopic materials is preferably 0.5 to 90% by weight as an amount that can confirm the hygroscopic performance and can secure the fluidity of the resin itself. A moisture-resistant resin material such as a silicone resin or a vinyl resin (copolymer) may be used instead of the hygroscopic material-containing resin material.

吸湿材含有樹脂材料を用いた場合は、水分は吸湿材に吸収され、基材たる樹脂は水分の影響を受けにくくなるため、また耐湿性樹脂材料を用いた場合はそれ自体が吸湿しにくいため、樹脂封止部１５と光透過性蓋板７との界面への水分の浸入を抑えることができる。   When a hygroscopic material-containing resin material is used, moisture is absorbed by the hygroscopic material, and the base resin is less susceptible to moisture, and when a moisture-resistant resin material is used, it is difficult to absorb moisture itself. Intrusion of moisture into the interface between the resin sealing portion 15 and the light-transmissive cover plate 7 can be suppressed.

よって、樹脂封止部１５と光透過性蓋板７との界面での剥離は起こり難く、光透過性蓋板７を撮像素子３に取り付けた接着剤９の機能低下も起こり難く、固体撮像装置は高耐湿性、高品質性を備えることとなる。したがって、固体撮像装置が高温高湿環境下に置かれても水分の影響を受け難くなり、高い信頼性を確保することが可能である。撮像素子３に直接に光透過性蓋板７を取り付けているので装置も薄型となる。   Therefore, peeling at the interface between the resin sealing portion 15 and the light-transmitting cover plate 7 is unlikely to occur, and the function of the adhesive 9 having the light-transmitting cover plate 7 attached to the image sensor 3 is unlikely to deteriorate. Has high moisture resistance and high quality. Therefore, even when the solid-state imaging device is placed in a high-temperature and high-humidity environment, it is difficult to be affected by moisture, and high reliability can be ensured. Since the light-transmitting cover plate 7 is directly attached to the image sensor 3, the apparatus is also thin.

この固体撮像装置の製造方法を説明する。まず、図１（ｂ）に示すような、リード部１を有する樹脂パッケージ２を準備する。そのためには、図示を省略するが、トランスファ成型装置に備わる封止金型の上下金型間にリードフレームをセットし、上下金型を型締めした後、プランジャーによって予めポット内にセットされた樹脂タブレットを高い圧力、高い温度をかけて前記上下金型のキャビティへ圧送することにより、中空状の樹脂パッケージ２をリードフレームに形成された複数のリード部１と一体に成形する（プリモールド体）。図示した樹脂パッケージ２は、内面に段差部（中段部）を形成し、この段差部にリード部１のインナーリード部５を露出させている。   A method for manufacturing the solid-state imaging device will be described. First, as shown in FIG. 1B, a resin package 2 having lead portions 1 is prepared. For this purpose, although not shown, the lead frame is set between the upper and lower molds of the sealing mold provided in the transfer molding apparatus, the upper and lower molds are clamped, and then set in the pot in advance by the plunger. A hollow resin package 2 is molded integrally with a plurality of lead portions 1 formed on a lead frame by feeding a resin tablet to the cavity of the upper and lower molds under high pressure and high temperature (pre-mold body). ). In the illustrated resin package 2, a stepped portion (middle stepped portion) is formed on the inner surface, and the inner lead portion 5 of the lead portion 1 is exposed at the stepped portion.

なおここでは、樹脂パッケージ２を１個のみ示しているが、通常はリードフレームとして、複数のリード部１とダイパッド部とこれらを保持したフレーム枠とを１ユニットとして複数ユニット配列したものを用い、前記の封止金型にてユニット毎に樹脂パッケージ２を形成し、適当時に個々の樹脂パッケージ２に分割する工法をとる。リードフレームの材料には、４２アロイ等の鉄系材料、あるいは銅系材料が用いられる。樹脂パッケージ２を形成する樹脂タブレットには、例えばエポキシ樹脂、具体的にはビスフェノール型エポキシ樹脂、ノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、多官能型エポキシ樹脂等が用いられる。   Although only one resin package 2 is shown here, a lead frame is usually used in which a plurality of lead portions 1, die pad portions, and a frame frame holding them are arranged as a single unit. A resin package 2 is formed for each unit with the above-described sealing mold, and a method of dividing into individual resin packages 2 at an appropriate time is taken. As the lead frame material, an iron-based material such as 42 alloy or a copper-based material is used. For the resin tablet forming the resin package 2, for example, an epoxy resin, specifically, a bisphenol type epoxy resin, a novolac type epoxy resin, a biphenyl type epoxy resin, a polyfunctional type epoxy resin, or the like is used.

次に、図１（ｃ）に示すように、光透過性蓋板７を透明な接着剤９（アクリル系ＵＶ硬化樹脂、エポキシ系ＵＶ硬化樹脂など）にて直接に貼り付けた撮像素子３を、樹脂パッケージ２のダイアタッチ面にダイボンド材料４によりダイボンドする。この際の撮像素子３の位置合せには、樹脂パッケージ２の外形、インナーリード部５への切り欠き、樹脂パッケージ２内の段差部などを用いる。ダイボンド材料４にはＡｇペースト、ＬＥテープなどを用いる。   Next, as shown in FIG. 1C, the imaging element 3 in which the light-transmitting cover plate 7 is directly attached with a transparent adhesive 9 (acrylic UV curable resin, epoxy UV curable resin, etc.) Then, the die-bonding material 4 is die-bonded to the die attach surface of the resin package 2. For the alignment of the image pickup device 3 at this time, the outer shape of the resin package 2, a notch to the inner lead portion 5, a stepped portion in the resin package 2, and the like are used. For the die bond material 4, Ag paste, LE tape, or the like is used.

次に、図１（ｄ）に示すように、撮像素子３上の電極パッドとインナーリード部５とをＡｕ線などの金属線６によりワイヤボンドする。その後に、図１（ｅ）（ｆ）に示すように、樹脂パッケージ２のキャビティ内に塗布ノズル１１（マルチノズルでもよい）を用いて上述の封止樹脂材料（液状）１５ａ（以下、単に樹脂１５ａという）を塗布して、撮像素子３および光透過性蓋板７の外周側に充填する。この際に、樹脂１５ａによって、金属線６を完全に被覆するとともに、撮像素子３の外周面および光透過性蓋板７の外周面を被覆する。樹脂１５ａの硬化後に、図１（ａ）に示した完成品が得られる。   Next, as shown in FIG. 1D, the electrode pad on the image sensor 3 and the inner lead portion 5 are wire-bonded with a metal wire 6 such as an Au wire. Thereafter, as shown in FIGS. 1E and 1F, the above-described sealing resin material (liquid) 15a (hereinafter simply referred to as resin) is used in the cavity of the resin package 2 using an application nozzle 11 (may be a multi-nozzle). 15a) is applied to fill the outer peripheral sides of the image pickup device 3 and the light-transmitting cover plate 7. At this time, the metal wire 6 is completely covered with the resin 15a, and the outer peripheral surface of the imaging element 3 and the outer peripheral surface of the light-transmitting cover plate 7 are covered. After the resin 15a is cured, the finished product shown in FIG. 1 (a) is obtained.

なお、撮像素子３以外の光素子や、光透過性蓋板７以外の光透過性部材を用いて光学デバイスを形成してもよく、さらには光素子でない半導体素子や光透過性でない蓋板を用いて半導体装置を形成しても構わない。撮像素子３，光透過性蓋板７，樹脂パッケージ２は樹脂封止部１５によって一体化されるので、接着剤９，ダイボンド材料４を省略することも可能である。光透過性蓋板７は撮像素子３に対して、上記のように撮像素子３を樹脂パッケージ２に搭載するに先立って取り付けるのでなく、撮像素子３を樹脂パッケージ２に搭載した後に取り付けてもよい。   Note that an optical device may be formed using an optical element other than the image pickup element 3 or a light transmissive member other than the light transmissive cover plate 7, and a semiconductor element that is not an optical element or a cover plate that is not light transmissive may be used. A semiconductor device may be formed using the same. Since the image pickup element 3, the light-transmitting lid plate 7, and the resin package 2 are integrated by the resin sealing portion 15, the adhesive 9 and the die bond material 4 can be omitted. The light-transmitting cover plate 7 may be attached to the image pickup device 3 after the image pickup device 3 is mounted on the resin package 2 instead of being attached before the image pickup device 3 is mounted on the resin package 2 as described above. .

図２は本発明の第２実施形態の半導体装置である固体撮像装置の断面図である。
上記の第１実施形態の半導体装置と異なるのは、導体部を有する支持体として、導体部１９ａを一体に設けた凹状のセラミックパッケージ２０を用いている点である。第１実施形態の半導体装置と同様の工程で製造することができ、同様の効果が得られる。 FIG. 2 is a cross-sectional view of a solid-state imaging device which is a semiconductor device according to a second embodiment of the present invention.
The difference from the semiconductor device of the first embodiment described above is that a concave ceramic package 20 provided integrally with a conductor portion 19a is used as a support having a conductor portion. It can be manufactured in the same process as the semiconductor device of the first embodiment, and the same effect can be obtained.

図３（ａ）は本発明の第３実施形態の半導体装置である固体撮像装置の断面図である。
この固体撮像装置は、導体部１９ｂを有する平板状の有機基板３０を用いており、電極パッド（図示せず）を一主面に有した撮像素子３と、撮像素子３の一主面の所定の領域を覆って当該撮像素子３に取り付けられた光透過性蓋板７と、撮像素子３の電極パッドと導体部１９ｂとを電気的に接続した金属線６と、導体部１９ｂおよび金属線６および撮像素子３の接続部分を覆い、且つ撮像素子３および光透過性蓋板７の外周面を覆った樹脂封止部１５とを有している。有機基板３０は、エポキシ、ＢＴレジン（ビスマレイミド・トリアジン樹脂）、ポリイミド等の樹脂の他、好ましくはガラス繊維などをも基板材料として構成される樹脂基板の表面や内層に配線したものを使用することができる。好ましい樹脂基板の例にガラスエポキシやＢＴ基板と総称されるものがあり、多層配線基板の例にＡＬＩＶＨ（Any Layer Via Hole）基板と総称されるものがある。図示を省略しているが、導体部１９ｂは、もう一方の表面に外部接続用端子が引き出されている。 FIG. 3A is a cross-sectional view of a solid-state imaging device which is a semiconductor device according to a third embodiment of the present invention.
This solid-state imaging device uses a flat organic substrate 30 having a conductor portion 19b, an imaging element 3 having an electrode pad (not shown) on one principal surface, and a predetermined principal surface of the imaging element 3. The light-transmitting cover plate 7 attached to the imaging device 3 so as to cover the region, the metal wire 6 electrically connecting the electrode pad of the imaging device 3 and the conductor portion 19b, the conductor portion 19b and the metal wire 6 And a resin sealing portion 15 that covers the connection portion of the image pickup device 3 and covers the outer peripheral surfaces of the image pickup device 3 and the light-transmitting lid plate 7. As the organic substrate 30, an epoxy substrate, a BT resin (bismaleimide / triazine resin), a resin such as polyimide, and preferably a glass substrate or the like wired on the surface or inner layer of a resin substrate is used. be able to. Examples of preferred resin substrates include those collectively referred to as glass epoxy and BT substrates, and examples of multilayer wiring substrates include those generally referred to as ALIVH (Any Layer Via Hole) substrates. Although not shown, the conductor portion 19b has an external connection terminal drawn out on the other surface.

この固体撮像装置においても、樹脂封止部１５を形成する封止樹脂材料として、吸湿材含有樹脂材料（あるいは耐湿性樹脂材料）が用いられ、上述したのと同様の効果が得られる。   Also in this solid-state imaging device, a hygroscopic material-containing resin material (or a moisture-resistant resin material) is used as the sealing resin material for forming the resin sealing portion 15, and the same effect as described above can be obtained.

この固体撮像装置を製造する際には、まず、図３（ｂ）に示すような、導体部１９ｂを有する平板状の有機基板３０を準備する。
次に、図３（ｃ）に示すように、光透過性蓋板７を接着剤９にて直接に貼り付けた撮像素子３を複数個、有機基板３０のダイアタッチ面にダイボンド材料４によりダイボンドする。ダイボンド材料４にはＡｇペースト、ＬＥテープなどを用いる。 When manufacturing this solid-state imaging device, first, a flat organic substrate 30 having a conductor portion 19b as shown in FIG. 3B is prepared.
Next, as shown in FIG. 3 (c), a plurality of image pickup devices 3 each having a light-transmitting cover plate 7 directly attached with an adhesive 9 are die-bonded to a die attach surface of an organic substrate 30 by a die-bond material 4. To do. For the die bond material 4, Ag paste, LE tape, or the like is used.

次に、図３（ｄ）に示すように、各撮像素子３上の電極パッド（図示せず）と有機基板３０の導体部１９ｂの接続端子とを金属線６によりワイヤボンドする。
図３（ｅ）に示すように、ワイヤボンドを終了した有機基板３０を樹脂塗布用の枠状の治具３１にセットし、図３（ｆ）に示すように、治具２３内に液状の樹脂１５ａを充填する。この際には、樹脂１５ａによって、金属線６を完全に被覆するとともに、撮像素子３および光透過性蓋板７の外周面を被覆する。なおこの際に、樹脂１５ａが光透過性蓋板７の表面に付着しないように、ディスペンサ１２により注意して塗布するか、あるいは光透過性蓋板７の表面をマスクしておく。 Next, as shown in FIG. 3D, an electrode pad (not shown) on each image sensor 3 and a connection terminal of the conductor portion 19 b of the organic substrate 30 are wire-bonded with a metal wire 6.
As shown in FIG. 3 (e), the organic substrate 30 after the wire bonding is set in a frame-like jig 31 for resin coating, and as shown in FIG. The resin 15a is filled. At this time, the metal wire 6 is completely covered with the resin 15a, and the outer peripheral surfaces of the imaging element 3 and the light-transmitting lid plate 7 are covered. At this time, the resin 15a is applied with care by the dispenser 12 so that the resin 15a does not adhere to the surface of the light-transmitting cover plate 7, or the surface of the light-transmitting cover plate 7 is masked.

図３（ｇ）に示すように、硬化した樹脂で一体化された成形品を治具３１から取り外し、図３（ｈ）（ｉ）に示すように、ほぼ撮像素子３のサイズにダイシングソー３２によりダイシングすることで、図３（ａ）に示すような、個片の固体撮像装置を得る。   As shown in FIG. 3 (g), the molded product integrated with the cured resin is removed from the jig 31, and as shown in FIGS. By performing the dicing, an individual solid-state imaging device as shown in FIG.

この固体撮像装置は、図１、図２に示した各固体撮像装置と同様に、薄型、高耐湿性、高品質性を実現しながら、側壁が存在しない分だけ小型化することが可能である。液状の樹脂１５ａの塗布は、印刷、インクジェット、などを用いても構わない。上記の有機基板３０に代えて、導体部を有する平板状のセラミック支持体や、上述のリードフレームを用いても構わない。   As with the solid-state imaging devices shown in FIGS. 1 and 2, this solid-state imaging device can be reduced in size as long as there is no side wall while realizing thinness, high moisture resistance, and high quality. . The liquid resin 15a may be applied by printing, inkjet, or the like. Instead of the organic substrate 30 described above, a flat ceramic support having a conductor portion or the above-described lead frame may be used.

図４（ａ）は本発明の第４実施形態の半導体装置である固体撮像装置の断面図である。
この固体撮像装置は、導体部を有する支持体として、デバイスホール３１内にインナーリード部５を設けた平坦な支持体３２を用いている。詳細には支持体３２は、デバイスホール３１を有した有機絶縁テープ３３を基材とし、有機絶縁テープ３３に形成された配線回路からデバイスホール３１内にインナーリード部５が伸び、有機絶縁テープ３３上の配線回路がソルダーレジスト３４に被覆されている。 FIG. 4A is a cross-sectional view of a solid-state imaging device which is a semiconductor device according to a fourth embodiment of the present invention.
This solid-state imaging device uses a flat support 32 provided with an inner lead portion 5 in a device hole 31 as a support having a conductor portion. Specifically, the support 32 is based on an organic insulating tape 33 having a device hole 31, and the inner lead portion 5 extends into the device hole 31 from a wiring circuit formed on the organic insulating tape 33, and the organic insulating tape 33 The upper wiring circuit is covered with the solder resist 34.

そして、電極部３５を一主面に有し、この電極部３５でインナーリード部５に接合された撮像素子３と、撮像素子３の一主面の所定の領域を覆って当該撮像素子３に取り付けられた光透過性蓋板７と、インナーリード部５および撮像素子３の接続部分を覆い、且つ撮像素子３および光透過性蓋板７の外周面を覆った樹脂封止部１５とを有している。   Then, the image pickup device 3 having the electrode portion 35 on one main surface and covering a predetermined area of the one main surface of the image pickup device 3 with the electrode portion 35 is joined to the inner lead portion 5. The attached light-transmitting lid plate 7 and a resin sealing portion 15 that covers the connecting portion between the inner lead portion 5 and the imaging element 3 and covers the outer peripheral surfaces of the imaging element 3 and the light-transmitting lid plate 7 are provided. is doing.

この固体撮像装置においても、樹脂封止部１５を形成する封止樹脂材料として、吸湿材含有樹脂材料（あるいは耐湿性樹脂材料）が用いられ、上述したのと同様の効果が得られる。   Also in this solid-state imaging device, a hygroscopic material-containing resin material (or a moisture-resistant resin material) is used as the sealing resin material for forming the resin sealing portion 15, and the same effect as described above can be obtained.

この固体撮像装置を製造する際には、まず、図４（ｂ）に示すように、撮像素子３と支持体３２とを互いの対応する電極部３５とインナーリード部５とが接合可能な位置に位置合わせする。次に、図４（ｃ）に示すように、撮像素子３と支持体３４とを互いの対応する電極部３５とインナーリード部５とが接合可能な位置へと移動させ、ボンディングが可能な状態にセットする。   When manufacturing this solid-state imaging device, first, as shown in FIG. 4B, the imaging element 3 and the support 32 can be joined to the corresponding electrode portion 35 and the inner lead portion 5. Align to. Next, as shown in FIG. 4C, the image pickup device 3 and the support 34 are moved to positions where the corresponding electrode portions 35 and the inner lead portions 5 can be bonded, and bonding is possible. Set to.

次に、図４（ｄ）に示すように、電極部３５とインナーリード部５とをボンディングツール３６を用いて熱圧着あるいは超音波熱圧着により接合する。この際に複数組の電極部３５・インナーリード部５を一括で接合してもよいし、シングルポイントにて接合してもよい。   Next, as shown in FIG. 4D, the electrode part 35 and the inner lead part 5 are joined by thermocompression bonding or ultrasonic thermocompression bonding using a bonding tool 36. At this time, a plurality of sets of electrode portions 35 and inner lead portions 5 may be joined together, or may be joined at a single point.

次に、図４（ｅ）（ｆ）に示すように、接合終了後に、電極部３５とインナーリード２５との接合部およびインナーリード２５の露出部を塗布ノズル１１からの液状の樹脂１５ａを塗布して封止する。この際に撮像素子３および光透過性蓋板７の外周面も樹脂１５ａで覆う。光透過性蓋板７の表面は露出させる。樹脂硬化後に、図４（ａ）に示したような、固体撮像装置の完成品を得る。   Next, as shown in FIGS. 4E and 4F, after the joining is finished, the liquid resin 15a from the coating nozzle 11 is applied to the joint portion between the electrode portion 35 and the inner lead 25 and the exposed portion of the inner lead 25. And seal. At this time, the outer peripheral surfaces of the image sensor 3 and the light-transmitting cover plate 7 are also covered with the resin 15a. The surface of the light transmissive cover plate 7 is exposed. After the resin is cured, a completed product of the solid-state imaging device as shown in FIG.

この固体撮像装置では、有機絶縁テープ３３がインナーリード２５の下支えとなる状態で支持体３２を用いたが、支持体３２を表裏逆にして用いても構わない。
図５は上述した固体撮像装置を搭載したカメラモジュールの断面図である。 In this solid-state imaging device, the support body 32 is used in a state where the organic insulating tape 33 serves as a support for the inner lead 25. However, the support body 32 may be used upside down.
FIG. 5 is a cross-sectional view of a camera module on which the above-described solid-state imaging device is mounted.

このカメラモジュールは、先に図７を用いて説明した固体撮像装置とレンズモジュール３７とにより構成されている。レンズモジュール３７は、レンズ３８，３９，４０を筒状レンズケース４１の上部筒部に所定の間隔で且つ光軸を一致させて嵌装したものであり、上部筒部よりも内寸が大きく形成された下部筒部内に固体撮像装置が光透過性蓋板７を奥側にして収納されている。レンズモジュール３７と固体撮像装置との間には、固体撮像装置の樹脂部１４の上面と外周面とを押えるパッケージ押え４２が介装されていて、これにより、固体撮像装置の撮像素子３がレンズ３８，３９，４０の光軸に対して所定の位置および姿勢に保持されている。固体撮像装置は図示したものに限らず用いることができる。   This camera module includes the solid-state imaging device and the lens module 37 described above with reference to FIG. The lens module 37 is obtained by fitting lenses 38, 39, and 40 to the upper cylindrical portion of the cylindrical lens case 41 at predetermined intervals and with the same optical axis, and is formed to have a larger inner dimension than the upper cylindrical portion. The solid-state imaging device is housed in the lower cylindrical portion with the light-transmitting cover plate 7 facing away. A package presser 42 is interposed between the lens module 37 and the solid-state imaging device to press the upper surface and the outer peripheral surface of the resin portion 14 of the solid-state imaging device. The optical axes 38, 39 and 40 are held at predetermined positions and postures. The solid-state imaging device can be used without being limited to the illustrated one.

本発明によれば、半導体装置を小型・薄型化しながら、高耐湿性、高信頼性を確保することができ、かかる半導体装置は、携帯電話やデジタルカメラなどに搭載するイメージセンサの撮像素子を有する固体撮像装置として特に有用である。   According to the present invention, it is possible to ensure high moisture resistance and high reliability while reducing the size and thickness of a semiconductor device. Such a semiconductor device has an image sensor of an image sensor mounted on a mobile phone, a digital camera, or the like. It is particularly useful as a solid-state imaging device.

本発明の第１実施形態の半導体装置である固体撮像装置およびその製造工程を示す断面図Sectional drawing which shows the solid-state imaging device which is a semiconductor device of 1st Embodiment of this invention, and its manufacturing process. 本発明の第２実施形態の半導体装置である固体撮像装置の断面図Sectional drawing of the solid-state imaging device which is a semiconductor device of 2nd Embodiment of this invention 本発明の第３実施形態の半導体装置である固体撮像装置およびその製造工程を示す断面図Sectional drawing which shows the solid-state imaging device which is a semiconductor device of 3rd Embodiment of this invention, and its manufacturing process. 本発明の第４実施形態の半導体装置である固体撮像装置およびその製造工程を示す断面図Sectional drawing which shows the solid-state imaging device which is a semiconductor device of 4th Embodiment of this invention, and its manufacturing process. 本発明に係るカメラモジュールの断面図Sectional view of the camera module according to the present invention 従来の固体撮像装置の断面図Sectional view of a conventional solid-state imaging device 従来の他の固体撮像装置の断面図Sectional view of another conventional solid-state imaging device

符号の説明Explanation of symbols

１ リード部
２ 樹脂パッケージ
３ 撮像素子
４ ダイボンド材料
５ インナーリード部
６ 金属線
７ 光透過性蓋板
９ 接着剤
11 塗布ノズル
15 樹脂封止部
15a 封止樹脂材料
20 セラミックパッケージ
30 有機基板
31 デバイスホール
32 支持体
35 電極部 DESCRIPTION OF SYMBOLS 1 Lead part 2 Resin package 3 Image pick-up element 4 Die bond material 5 Inner lead part 6 Metal wire 7 Light-transmitting cover board 9 Adhesive
11 Application nozzle
15 Resin seal
15a Sealing resin material
20 Ceramic package
30 Organic substrate
31 Device hole
32 Support
35 Electrode section

Claims (6)

導体部を有する支持体と、前記導体部に電気的に接続して前記支持体上に搭載された半導体素子と、前記半導体素子上にその一主面の所定の領域を覆って搭載された蓋体と、前記導体部およびそれへの接続部を覆い且つ前記半導体素子および蓋体の外周面を覆った樹脂封止部とを有し、前記樹脂封止部が耐湿性樹脂材料あるいは吸湿材含有樹脂材料で形成されていることを特徴とする半導体装置。   A support body having a conductor portion; a semiconductor element electrically connected to the conductor section and mounted on the support body; and a lid mounted on the semiconductor element so as to cover a predetermined region of one main surface thereof And a resin sealing part covering the conductor part and the connection part to the semiconductor element and covering the outer peripheral surface of the semiconductor element and the lid, the resin sealing part containing a moisture-resistant resin material or a hygroscopic material A semiconductor device formed of a resin material. 半導体素子が光学素子であり、蓋体が光透過性蓋体であることを特徴とする請求項１記載の半導体装置。   The semiconductor device according to claim 1, wherein the semiconductor element is an optical element and the lid is a light-transmitting lid. 支持体は、凹状あるいは平坦に形成されていることを特徴とする請求項１記載の半導体装置。   2. The semiconductor device according to claim 1, wherein the support is formed in a concave shape or a flat shape. 支持体は、セラミックあるいは樹脂を基材として一部に導体部を配して形成されているか、または全体が導体材料にて所定のリード部を配して形成されていることを特徴とする請求項１または請求項３のいずれかに記載の半導体装置。   The support body is formed by arranging a conductor part in a part of ceramic or resin as a base material, or entirely formed by arranging a predetermined lead part of a conductor material. The semiconductor device according to claim 1 or 3. 半導体素子上にその一主面の所定の領域を覆う蓋体を搭載するとともに、前記半導体素子を、導体部を有する支持体上に前記導体部に電気的に接続させて搭載し、その後に、液状の耐湿性樹脂材料あるいは吸湿材含有樹脂材料を前記導体部およびそれへの接続部と前記半導体素子および蓋体の外周面に塗布して樹脂封止部を形成することを特徴とする半導体装置の製造方法。   A lid that covers a predetermined region of one main surface of the semiconductor element is mounted on the semiconductor element, and the semiconductor element is mounted on the support having a conductor part by being electrically connected to the conductor part. A semiconductor device characterized in that a liquid moisture-resistant resin material or a hygroscopic material-containing resin material is applied to the conductor portion, a connection portion to the conductor portion, and the outer peripheral surface of the semiconductor element and the lid to form a resin sealing portion. Manufacturing method. 請求項２に記載された半導体装置を搭載したことを特徴とするカメラモジュール。   A camera module comprising the semiconductor device according to claim 2.
JP2006304645A 2006-11-10 2006-11-10 Semiconductor device, its manufacturing method and camera module with the same Pending JP2008124160A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054643A (en) * 2009-08-31 2011-03-17 Canon Inc Solid-state imaging device
WO2017159174A1 (en) * 2016-03-15 2017-09-21 ソニー株式会社 Solid state imaging apparatus and manufacturing method of solid state imaging apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054643A (en) * 2009-08-31 2011-03-17 Canon Inc Solid-state imaging device
WO2017159174A1 (en) * 2016-03-15 2017-09-21 ソニー株式会社 Solid state imaging apparatus and manufacturing method of solid state imaging apparatus
US10770493B2 (en) 2016-03-15 2020-09-08 Sony Corporation Solid-state imaging apparatus with high handling reliability and method for manufacturing solid-state imaging apparatus

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