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TW373290B - Memory cell having a vertical transistor and a trench capacitor - Google Patents

Memory cell having a vertical transistor and a trench capacitor

Info

Publication number
TW373290B
TW373290B TW086119163A TW86119163A TW373290B TW 373290 B TW373290 B TW 373290B TW 086119163 A TW086119163 A TW 086119163A TW 86119163 A TW86119163 A TW 86119163A TW 373290 B TW373290 B TW 373290B
Authority
TW
Taiwan
Prior art keywords
trench
contact
gate
memory cell
source
Prior art date
Application number
TW086119163A
Other languages
English (en)
Inventor
Norbert Arnold
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW373290B publication Critical patent/TW373290B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW086119163A 1996-12-20 1997-12-18 Memory cell having a vertical transistor and a trench capacitor TW373290B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/770,962 US5937296A (en) 1996-12-20 1996-12-20 Memory cell that includes a vertical transistor and a trench capacitor

Publications (1)

Publication Number Publication Date
TW373290B true TW373290B (en) 1999-11-01

Family

ID=25090246

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086119163A TW373290B (en) 1996-12-20 1997-12-18 Memory cell having a vertical transistor and a trench capacitor

Country Status (5)

Country Link
US (3) US5937296A (zh)
EP (1) EP0852396A3 (zh)
JP (1) JPH10189916A (zh)
KR (1) KR19980064222A (zh)
TW (1) TW373290B (zh)

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Also Published As

Publication number Publication date
US6150210A (en) 2000-11-21
JPH10189916A (ja) 1998-07-21
US6200851B1 (en) 2001-03-13
KR19980064222A (ko) 1998-10-07
EP0852396A2 (en) 1998-07-08
EP0852396A3 (en) 2001-07-18
US5937296A (en) 1999-08-10

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