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TW351021B - Photoelectric conversion apparatus and image reading apparatus - Google Patents

Photoelectric conversion apparatus and image reading apparatus

Info

Publication number
TW351021B
TW351021B TW086100422A TW86100422A TW351021B TW 351021 B TW351021 B TW 351021B TW 086100422 A TW086100422 A TW 086100422A TW 86100422 A TW86100422 A TW 86100422A TW 351021 B TW351021 B TW 351021B
Authority
TW
Taiwan
Prior art keywords
semiconductor
photoelectric conversion
image reading
transmitting
conversion apparatus
Prior art date
Application number
TW086100422A
Other languages
English (en)
Inventor
Kai Ozuka
Shigetoshi Sugawa
Hiraku Kozuka
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of TW351021B publication Critical patent/TW351021B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/198—Contact-type image sensors [CIS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
  • Light Receiving Elements (AREA)
  • Facsimile Heads (AREA)
TW086100422A 1996-01-22 1997-01-16 Photoelectric conversion apparatus and image reading apparatus TW351021B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8008202A JPH09199752A (ja) 1996-01-22 1996-01-22 光電変換装置及び画像読取装置

Publications (1)

Publication Number Publication Date
TW351021B true TW351021B (en) 1999-01-21

Family

ID=11686686

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086100422A TW351021B (en) 1996-01-22 1997-01-16 Photoelectric conversion apparatus and image reading apparatus

Country Status (5)

Country Link
US (1) US5861655A (zh)
JP (1) JPH09199752A (zh)
KR (1) KR100237133B1 (zh)
CN (1) CN1146998C (zh)
TW (1) TW351021B (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3592037B2 (ja) 1997-05-30 2004-11-24 キヤノン株式会社 光電変換装置
TW396707B (en) * 1998-02-20 2000-07-01 Canon Kk Semiconductor device
US6878977B1 (en) * 1999-02-25 2005-04-12 Canon Kabushiki Kaisha Photoelectric conversion device, and image sensor and image input system making use of the same
US6534335B1 (en) * 1999-07-22 2003-03-18 Micron Technology, Inc. Optimized low leakage diodes, including photodiodes
US6465862B1 (en) * 1999-10-05 2002-10-15 Brannon Harris Method and apparatus for implementing efficient CMOS photo sensors
KR20020058457A (ko) * 2000-12-30 2002-07-12 박종섭 포토다이오드와 필드산화막 계면의 반도체 기판 내에고농도 불순물 도핑영역을 구비하는 이미지 센서
US20030038336A1 (en) * 2001-08-22 2003-02-27 Mann Richard A. Semiconductor device for isolating a photodiode to reduce junction leakage and method of formation
EP1355360B1 (en) * 2002-04-18 2006-11-15 STMicroelectronics Limited Semiconductor structure
DE10223202A1 (de) * 2002-05-24 2003-12-11 Fraunhofer Ges Forschung Photodiode
US7470944B2 (en) * 2002-06-26 2008-12-30 Nikon Corporation Solid-state image sensor
KR100883021B1 (ko) * 2002-07-19 2009-02-12 매그나칩 반도체 유한회사 암신호 감소를 위한 이미지센서 제조 방법
KR100841208B1 (ko) * 2002-07-19 2008-06-24 매그나칩 반도체 유한회사 암신호 감소를 위한 이미지센서 제조 방법
KR100867089B1 (ko) * 2002-07-19 2008-11-04 매그나칩 반도체 유한회사 암전류 특성을 향상시킨 시모스 이미지센서
JP4737956B2 (ja) * 2003-08-25 2011-08-03 東芝モバイルディスプレイ株式会社 表示装置および光電変換素子
KR100669270B1 (ko) 2003-08-25 2007-01-16 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 표시 장치 및 광전 변환 소자
US7170143B2 (en) * 2003-10-20 2007-01-30 Hamamatsu Photonics K.K. Semiconductor photo-detection device and radiation apparatus
JP2008306080A (ja) * 2007-06-11 2008-12-18 Hitachi Ltd 光センサ素子、およびこれを用いた光センサ装置、画像表示装置
DE102007037020B3 (de) * 2007-08-06 2008-08-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Photodiode
CN102197485B (zh) * 2008-10-23 2013-07-17 夏普株式会社 半导体装置及其制造方法以及显示装置
US20100163759A1 (en) * 2008-12-31 2010-07-01 Stmicroelectronics S.R.L. Radiation sensor with photodiodes being integrated on a semiconductor substrate and corresponding integration process
US9025288B2 (en) * 2013-03-15 2015-05-05 Nxp B.V. Cross talk mitigation
JP7129199B2 (ja) * 2018-04-11 2022-09-01 キヤノン株式会社 光検出装置、光検出システム及び移動体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042897B2 (ja) * 1978-05-10 1985-09-25 株式会社東芝 光検出器
US4794443A (en) * 1984-05-28 1988-12-27 Canon Kabushiki Kaisha Semiconductor device and process for producing same
US5268309A (en) * 1984-09-01 1993-12-07 Canon Kabushiki Kaisha Method for manufacturing a photosensor
US5309013A (en) * 1985-04-30 1994-05-03 Canon Kabushiki Kaisha Photoelectric conversion device
JPH0760888B2 (ja) * 1985-06-12 1995-06-28 キヤノン株式会社 光電変換装置
DE3706278A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleitervorrichtung und herstellungsverfahren hierfuer
JPH07115184A (ja) * 1993-08-24 1995-05-02 Canon Inc 積層型固体撮像装置及びその製造方法
JP3404848B2 (ja) * 1993-12-21 2003-05-12 ソニー株式会社 半導体装置

Also Published As

Publication number Publication date
JPH09199752A (ja) 1997-07-31
US5861655A (en) 1999-01-19
CN1146998C (zh) 2004-04-21
CN1165406A (zh) 1997-11-19
KR100237133B1 (ko) 2000-01-15

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees