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TW344108B - A bipolar transistor and method of manufacturing thereof - Google Patents

A bipolar transistor and method of manufacturing thereof

Info

Publication number
TW344108B
TW344108B TW084109857A TW84109857A TW344108B TW 344108 B TW344108 B TW 344108B TW 084109857 A TW084109857 A TW 084109857A TW 84109857 A TW84109857 A TW 84109857A TW 344108 B TW344108 B TW 344108B
Authority
TW
Taiwan
Prior art keywords
diffusion layer
impurity diffusion
impurity
conductive type
type formed
Prior art date
Application number
TW084109857A
Other languages
English (en)
Inventor
Hiroyuki Miwa
Original Assignee
Sony Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Co Ltd filed Critical Sony Co Ltd
Application granted granted Critical
Publication of TW344108B publication Critical patent/TW344108B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/011—Bipolar transistors

Landscapes

  • Bipolar Transistors (AREA)
TW084109857A 1994-09-26 1995-09-20 A bipolar transistor and method of manufacturing thereof TW344108B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22961294A JP3326990B2 (ja) 1994-09-26 1994-09-26 バイポーラトランジスタ及びその製造方法

Publications (1)

Publication Number Publication Date
TW344108B true TW344108B (en) 1998-11-01

Family

ID=16894913

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084109857A TW344108B (en) 1994-09-26 1995-09-20 A bipolar transistor and method of manufacturing thereof

Country Status (4)

Country Link
US (1) US5824589A (zh)
JP (1) JP3326990B2 (zh)
KR (1) KR100385655B1 (zh)
TW (1) TW344108B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274257A (ja) * 2000-03-27 2001-10-05 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6869852B1 (en) * 2004-01-09 2005-03-22 International Business Machines Corporation Self-aligned raised extrinsic base bipolar transistor structure and method
KR102544036B1 (ko) 2021-09-01 2023-06-21 대한전열공업(주) 브레이징 접합을 통한 중계기용 냉각장치의 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5626465A (en) * 1979-08-13 1981-03-14 Hitachi Ltd Semiconductor memory and the manufacturing process thereof
JP2565159B2 (ja) * 1987-03-28 1996-12-18 ソニー株式会社 半導体装置及びその製造方法
JPH02308541A (ja) * 1989-05-23 1990-12-21 Fujitsu Ltd 半導体装置の製造方法
JPH0462929A (ja) * 1990-06-30 1992-02-27 Nec Corp 半導体装置およびその製造方法
US5217909A (en) * 1990-07-18 1993-06-08 Siemens Aktiengesellschaft Method for manufacturing a bipolar transistor
JPH04250629A (ja) * 1991-01-25 1992-09-07 Fujitsu Ltd 半導体装置及びその製造方法
US5504363A (en) * 1992-09-02 1996-04-02 Motorola Inc. Semiconductor device
KR0171128B1 (ko) * 1995-04-21 1999-02-01 김우중 수직형 바이폴라 트랜지스터

Also Published As

Publication number Publication date
KR100385655B1 (ko) 2004-06-30
JP3326990B2 (ja) 2002-09-24
JPH0897223A (ja) 1996-04-12
US5824589A (en) 1998-10-20

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees