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TW347565B - A complementary bipolar transistors and a fabrication method thereof - Google Patents

A complementary bipolar transistors and a fabrication method thereof

Info

Publication number
TW347565B
TW347565B TW086114772A TW86114772A TW347565B TW 347565 B TW347565 B TW 347565B TW 086114772 A TW086114772 A TW 086114772A TW 86114772 A TW86114772 A TW 86114772A TW 347565 B TW347565 B TW 347565B
Authority
TW
Taiwan
Prior art keywords
drum
conductive type
bipolar transistors
fabrication method
semiconductor layer
Prior art date
Application number
TW086114772A
Other languages
Chinese (zh)
Inventor
Kim Jong-Hwan
Kwon Tae-Hoon
Kim Cheol-Joong
Lee Suk-Kyun
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW347565B publication Critical patent/TW347565B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0114—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including vertical BJTs and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

A lateral bipolar transistor comprising: a semiconductor layer of a first conductive type; a first drum-shape layer of the first conductive type formed on the semiconductor layer, and having a dopant concentration higher than that of the semiconductor layer; forming a collector region of a second conductive type in the semiconductor layer, in which the collector region is separated from the first drum-shape layer and surrounding the first drum-shape layer; and forming an emitter region of the second conductive type in the first drum-shape layer.
TW086114772A 1996-10-11 1997-10-08 A complementary bipolar transistors and a fabrication method thereof TW347565B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR19960045305 1996-10-11
KR1019970046600A KR100258436B1 (en) 1996-10-11 1997-09-10 Complementary Bipolar Transistors and Manufacturing Method Thereof

Publications (1)

Publication Number Publication Date
TW347565B true TW347565B (en) 1998-12-11

Family

ID=26632193

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086114772A TW347565B (en) 1996-10-11 1997-10-08 A complementary bipolar transistors and a fabrication method thereof

Country Status (6)

Country Link
US (3) US6005283A (en)
JP (1) JPH10256270A (en)
KR (1) KR100258436B1 (en)
CN (3) CN1331230C (en)
DE (1) DE19744860A1 (en)
TW (1) TW347565B (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6660664B1 (en) * 2000-03-31 2003-12-09 International Business Machines Corp. Structure and method for formation of a blocked silicide resistor
US6551869B1 (en) * 2000-06-09 2003-04-22 Motorola, Inc. Lateral PNP and method of manufacture
JP2005191388A (en) * 2003-12-26 2005-07-14 Mitsumi Electric Co Ltd Lateral pnp transistor
US6965133B2 (en) * 2004-03-13 2005-11-15 International Business Machines Corporation Method of base formation in a BiCMOS process
JP2005294659A (en) * 2004-04-02 2005-10-20 Isahaya Electronics Corp Bipolar transistor with built-in resistor
EP1646084A1 (en) * 2004-10-06 2006-04-12 Infineon Technologies AG A method in the fabrication of an integrated injection logic circuit
US7045830B1 (en) * 2004-12-07 2006-05-16 Fairchild Semiconductor Corporation High-voltage diodes formed in advanced power integrated circuit devices
CN100409449C (en) * 2005-04-27 2008-08-06 上海华虹Nec电子有限公司 Polysilicon-insulating layer-polysilicon capacitance, high-capacitant polysilicon device and its production
JP4993941B2 (en) * 2006-04-27 2012-08-08 パナソニック株式会社 Semiconductor integrated circuit and system LSI having the same
DE102007056103B4 (en) * 2007-11-15 2010-03-04 Texas Instruments Deutschland Gmbh Process for the preparation of isolated integrated semiconductor structures
US7842968B2 (en) 2008-01-09 2010-11-30 Fairchild Semiconductor Corporation Integrated low leakage diode
US7745845B2 (en) * 2008-04-23 2010-06-29 Fairchild Semiconductor Corporation Integrated low leakage schottky diode
US10515872B1 (en) 2008-09-22 2019-12-24 Hrl Laboratories, Llc Metallic sub-collector for HBT and BJT transistors
US8860092B1 (en) * 2008-09-22 2014-10-14 Hrl Laboratories, Llc Metallic sub-collector for HBT and BJT transistors
US9231121B2 (en) * 2013-01-17 2016-01-05 Monolithic Power Systems, Inc. High voltage circuit layout structure
CN103594499B (en) * 2013-10-16 2016-02-03 无锡市晶源微电子有限公司 The NPN tubular construction of emitter resistance is reduced in a kind of polysilicon emitter BiCMOS technique
JP6285831B2 (en) * 2014-09-12 2018-02-28 株式会社東芝 Semiconductor element
CN105720099A (en) * 2014-12-02 2016-06-29 无锡华润上华半导体有限公司 N-type lateral double-diffused metal oxide semiconductor field effect transistor
CN106033743B (en) * 2015-03-17 2019-04-02 北大方正集团有限公司 BiCMOS integrated circuit manufacture method
CN106935638A (en) * 2015-12-30 2017-07-07 无锡华润华晶微电子有限公司 A kind of polysilicon emitter transistor and preparation method thereof
US20170373174A1 (en) * 2016-06-25 2017-12-28 Texas Instruments Incorporated Radiation enhanced bipolar transistor
CN111968971B (en) * 2020-08-28 2023-06-06 西安微电子技术研究所 A radiation-resistant common-island LPNP and SPNP layout structure

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163244A (en) * 1977-10-28 1979-07-31 General Electric Company Symmetrical integrated injection logic circuit
EP0093304B1 (en) * 1982-04-19 1986-01-15 Matsushita Electric Industrial Co., Ltd. Semiconductor ic and method of making the same
JPS637665A (en) * 1986-06-27 1988-01-13 Toshiba Corp Lateral p-n-p transistor
JPH02135773A (en) * 1988-11-17 1990-05-24 Oki Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPH03203265A (en) * 1989-12-28 1991-09-04 Sony Corp semiconductor equipment
US5304839A (en) * 1990-12-04 1994-04-19 At&T Bell Laboratories Bipolar ESD protection for integrated circuits
JPH04262569A (en) * 1991-02-15 1992-09-17 Clarion Co Ltd Semiconductor device
KR950011017B1 (en) * 1991-07-01 1995-09-27 미쯔시다덴기산교 가부시기가이샤 Semiconductor device and manufacturing method
US5387553A (en) * 1992-03-24 1995-02-07 International Business Machines Corporation Method for forming a lateral bipolar transistor with dual collector, circular symmetry and composite structure
JPH06120435A (en) * 1992-09-30 1994-04-28 Sony Corp Iil structure and method of manufacturing iil structure
EP0646967B1 (en) * 1993-09-27 1999-09-08 STMicroelectronics S.r.l. Low-noise pnp transistor
JPH07235550A (en) * 1994-02-21 1995-09-05 Toshiba Corp Semiconductor device and manufacturing method thereof
JP3303550B2 (en) * 1994-09-08 2002-07-22 ソニー株式会社 Method for manufacturing semiconductor device
JP3528356B2 (en) * 1994-09-19 2004-05-17 ソニー株式会社 Semiconductor device and manufacturing method thereof
US5455188A (en) * 1995-01-31 1995-10-03 United Microelectronics Corp. Process for fabricating a lateral bipolar junction transistor
JP3489265B2 (en) * 1995-05-19 2004-01-19 ソニー株式会社 Semiconductor device manufacturing method

Also Published As

Publication number Publication date
KR100258436B1 (en) 2000-06-01
JPH10256270A (en) 1998-09-25
CN1381893A (en) 2002-11-27
US20020017703A1 (en) 2002-02-14
US6326674B1 (en) 2001-12-04
CN1331230C (en) 2007-08-08
CN1381894A (en) 2002-11-27
CN1201405C (en) 2005-05-11
CN1381901A (en) 2002-11-27
DE19744860A1 (en) 1998-04-16
CN1209818C (en) 2005-07-06
KR19980032370A (en) 1998-07-25
US6573146B2 (en) 2003-06-03
US6005283A (en) 1999-12-21

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