TW272286B - - Google Patents
Info
- Publication number
- TW272286B TW272286B TW081108961A TW81108961A TW272286B TW 272286 B TW272286 B TW 272286B TW 081108961 A TW081108961 A TW 081108961A TW 81108961 A TW81108961 A TW 81108961A TW 272286 B TW272286 B TW 272286B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Detection And Correction Of Errors (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920005284A KR950003013B1 (ko) | 1992-03-30 | 1992-03-30 | 틀림정정회로를 가지는 이이피롬 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW272286B true TW272286B (zh) | 1996-03-11 |
Family
ID=19331104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW081108961A TW272286B (zh) | 1992-03-30 | 1992-11-09 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5448578A (zh) |
| JP (1) | JP2525112B2 (zh) |
| KR (1) | KR950003013B1 (zh) |
| CN (1) | CN1035698C (zh) |
| DE (1) | DE4242810C2 (zh) |
| FR (1) | FR2689295B1 (zh) |
| GB (1) | GB2265738B (zh) |
| IT (1) | IT1256497B (zh) |
| TW (1) | TW272286B (zh) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08203278A (ja) * | 1995-01-25 | 1996-08-09 | Sony Corp | 半導体メモリ |
| EP0766174B1 (en) * | 1995-09-29 | 2002-05-22 | STMicroelectronics S.r.l. | Memory device having improved yield and reliability |
| EP0797147B1 (en) * | 1996-03-21 | 2002-07-03 | STMicroelectronics S.r.l. | Method for recovering failed memory devices |
| FR2748134B1 (fr) * | 1996-04-30 | 1998-06-26 | Bull Cp8 | Procede et dispositif permettant a un programme fige de pouvoir evoluer |
| US6041423A (en) * | 1996-11-08 | 2000-03-21 | Oracle Corporation | Method and apparatus for using undo/redo logging to perform asynchronous updates of parity and data pages in a redundant array data storage environment |
| KR100247064B1 (ko) * | 1997-04-10 | 2000-03-15 | 윤종용 | 콤팩트디스크-롬 드라이브의 디코딩장치에서 에러정정을 위한 메모리 리드회로 |
| US5956743A (en) * | 1997-08-25 | 1999-09-21 | Bit Microsystems, Inc. | Transparent management at host interface of flash-memory overhead-bytes using flash-specific DMA having programmable processor-interrupt of high-level operations |
| KR100266748B1 (ko) | 1997-12-31 | 2000-10-02 | 윤종용 | 반도체 메모리 장치 및 그 장치의 에러 정정 방법 |
| JP4074029B2 (ja) | 1999-06-28 | 2008-04-09 | 株式会社東芝 | フラッシュメモリ |
| FR2809222A1 (fr) * | 2000-05-17 | 2001-11-23 | St Microelectronics Sa | Memoire eeprom comprenant un systeme de correction d'erreur |
| JP3595495B2 (ja) | 2000-07-27 | 2004-12-02 | Ｎｅｃマイクロシステム株式会社 | 半導体記憶装置 |
| US7042770B2 (en) * | 2001-07-23 | 2006-05-09 | Samsung Electronics Co., Ltd. | Memory devices with page buffer having dual registers and method of using the same |
| KR100543447B1 (ko) * | 2003-04-03 | 2006-01-23 | 삼성전자주식회사 | 에러정정기능을 가진 플래쉬메모리장치 |
| US7099221B2 (en) | 2004-05-06 | 2006-08-29 | Micron Technology, Inc. | Memory controller method and system compensating for memory cell data losses |
| US20060010339A1 (en) | 2004-06-24 | 2006-01-12 | Klein Dean A | Memory system and method having selective ECC during low power refresh |
| US7340668B2 (en) | 2004-06-25 | 2008-03-04 | Micron Technology, Inc. | Low power cost-effective ECC memory system and method |
| US7116602B2 (en) | 2004-07-15 | 2006-10-03 | Micron Technology, Inc. | Method and system for controlling refresh to avoid memory cell data losses |
| US6965537B1 (en) * | 2004-08-31 | 2005-11-15 | Micron Technology, Inc. | Memory system and method using ECC to achieve low power refresh |
| KR100680486B1 (ko) * | 2005-03-30 | 2007-02-08 | 주식회사 하이닉스반도체 | 향상된 동작 성능을 가지는 플래시 메모리 장치의 페이지버퍼 회로 및 그 독출 및 프로그램 동작 제어 방법 |
| JP2008059711A (ja) * | 2006-09-01 | 2008-03-13 | Toshiba Corp | 半導体記憶装置 |
| US7836386B2 (en) * | 2006-09-27 | 2010-11-16 | Qimonda Ag | Phase shift adjusting method and circuit |
| JP5016888B2 (ja) * | 2006-10-04 | 2012-09-05 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US7894289B2 (en) | 2006-10-11 | 2011-02-22 | Micron Technology, Inc. | Memory system and method using partial ECC to achieve low power refresh and fast access to data |
| US7900120B2 (en) | 2006-10-18 | 2011-03-01 | Micron Technology, Inc. | Memory system and method using ECC with flag bit to identify modified data |
| KR100799018B1 (ko) * | 2006-12-27 | 2008-01-28 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자 및 자기 보상 방법 |
| KR100888482B1 (ko) | 2007-05-11 | 2009-03-12 | 삼성전자주식회사 | 비휘발성 반도체 메모리 장치 및 상기 비휘발성 반도체메모리 장치의 쓰기 방법 |
| KR101678404B1 (ko) * | 2010-02-25 | 2016-11-23 | 삼성전자주식회사 | 사전 확률 정보를 사용하는 메모리 시스템 및 그것의 데이터 처리 방법 |
| JP2010231887A (ja) * | 2010-07-20 | 2010-10-14 | Toshiba Corp | 不揮発性半導体メモリ |
| US9047953B2 (en) * | 2013-08-22 | 2015-06-02 | Macronix International Co., Ltd. | Memory device structure with page buffers in a page-buffer level separate from the array level |
| US9484113B2 (en) * | 2014-04-15 | 2016-11-01 | Advanced Micro Devices, Inc. | Error-correction coding for hot-swapping semiconductor devices |
| KR20160125745A (ko) * | 2015-04-22 | 2016-11-01 | 에스케이하이닉스 주식회사 | 반도체 장치 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3668632A (en) * | 1969-02-13 | 1972-06-06 | Ibm | Fast decode character error detection and correction system |
| US4410988A (en) * | 1978-08-04 | 1983-10-18 | Honeywell Information Systems Inc. | Out of cycle error correction apparatus |
| US4692923A (en) * | 1984-09-28 | 1987-09-08 | Ncr Corporation | Fault tolerant memory |
| JPS6221357A (ja) * | 1985-07-22 | 1987-01-29 | Toshiba Corp | メモリシステム |
| US4672613A (en) * | 1985-11-01 | 1987-06-09 | Cipher Data Products, Inc. | System for transferring digital data between a host device and a recording medium |
| JPH01171199A (ja) * | 1987-12-25 | 1989-07-06 | Mitsubishi Electric Corp | 半導体メモリ |
| JPH024813A (ja) * | 1988-06-24 | 1990-01-09 | Hitachi Ltd | 重合性組成物 |
| US4996690A (en) * | 1988-08-26 | 1991-02-26 | Stac Electronics | Write operation with gating capability |
| JPH02166700A (ja) * | 1988-12-15 | 1990-06-27 | Samsung Electron Co Ltd | エラー検査及び訂正装置を内蔵した不揮発性半導体メモリ装置 |
| US5274647A (en) * | 1989-02-13 | 1993-12-28 | Kabushiki Kaisha Toshiba | Elastic buffer with error detection using a hamming distance circuit |
| JPH07114077B2 (ja) * | 1989-06-01 | 1995-12-06 | 三菱電機株式会社 | 不揮発性半導体記憶装置 |
| JPH0318832A (ja) * | 1989-06-15 | 1991-01-28 | Ricoh Co Ltd | 有機膜形成方法 |
-
1992
- 1992-03-30 KR KR1019920005284A patent/KR950003013B1/ko not_active IP Right Cessation
- 1992-11-09 TW TW081108961A patent/TW272286B/zh active
- 1992-11-27 FR FR9214328A patent/FR2689295B1/fr not_active Expired - Fee Related
- 1992-12-17 DE DE4242810A patent/DE4242810C2/de not_active Expired - Fee Related
- 1992-12-31 GB GB9227139A patent/GB2265738B/en not_active Expired - Fee Related
- 1992-12-31 IT ITMI922999A patent/IT1256497B/it active IP Right Grant
- 1992-12-31 CN CN92115052A patent/CN1035698C/zh not_active Expired - Fee Related
-
1993
- 1993-01-29 JP JP5013896A patent/JP2525112B2/ja not_active Expired - Fee Related
- 1993-03-30 US US08/038,095 patent/US5448578A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| GB2265738B (en) | 1996-01-17 |
| JP2525112B2 (ja) | 1996-08-14 |
| CN1035698C (zh) | 1997-08-20 |
| IT1256497B (it) | 1995-12-07 |
| JPH05298895A (ja) | 1993-11-12 |
| FR2689295B1 (fr) | 1996-12-27 |
| ITMI922999A1 (it) | 1994-07-01 |
| DE4242810A1 (de) | 1993-10-07 |
| KR950003013B1 (ko) | 1995-03-29 |
| KR930020472A (ko) | 1993-10-19 |
| ITMI922999A0 (it) | 1992-12-31 |
| CN1077049A (zh) | 1993-10-06 |
| FR2689295A1 (fr) | 1993-10-01 |
| DE4242810C2 (de) | 2000-06-08 |
| GB9227139D0 (en) | 1993-02-24 |
| GB2265738A (en) | 1993-10-06 |
| US5448578A (en) | 1995-09-05 |