TW202013534A - Dicing die bond film - Google Patents

Abstract

To provide a dicing die bond film provided with an adhesive layer suitable for realizing good adhesion to a frame member such as a ring frame while securing the cleaving property in an expanding process. A dicing die bond film X according to the present invention includes a dicing tape 10 and an adhesive layer 20. The dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12. The adhesive layer 20 is in close contact with the adhesive layer 12 so as to be peelable. The adhesive layer 20 has a tensile storage modulus of 5 to 120 MPa at 25 DEG C measured under a predetermined condition for an adhesive layer sample piece having a width of 10 mm and a thickness of 160 [mu]m. In addition, the adhesive layer 20 has a tensile storage modulus of 3000 to 6000 MPa at -15 DEG C measured under a predetermined condition for an adhesive layer sample piece having a width of 5 mm and a thickness of 80 [mu]m.

Description

Crystal cutting film

The invention relates to a die-cut crystal bonding film which can be used in the manufacturing process of semiconductor devices.

In the manufacturing process of a semiconductor device, in order to obtain a semiconductor wafer with a bonding film of a size equivalent to that of a die-bonding wafer, that is, a semiconductor wafer with a die-bonding film, there is a case where a die-cut die-bonding film is used. The die-bonding die-bonding film has a size corresponding to the semiconductor wafer to be processed, for example, it includes: a die-cutting tape, which includes a substrate and an adhesive layer; and a die-bonding film (adhesive layer), which can be peelably adhered On the side of the adhesive layer.

As one of the methods for obtaining a semiconductor wafer to which a die-bonding film is attached using a die-bonding film, there is known a method of cutting a die-bonding film by extending a dicing tape in the die-bonding film. In this method, first, a semiconductor wafer is bonded on the die-bonding film of the dicing die-bonding film. The semiconductor wafer is processed, for example, in such a manner that it can be cut together with the crystal bonding film and singulated into a plurality of semiconductor chips. Secondly, in order to cut the die-bonding film in such a manner that a plurality of die-bonding film pieces which are in close contact with the semiconductor wafer are generated by the die-bonding film on the die-cutting tape, an extension device is used to extend the die-cutting tape of the die-cutting die-bonding film . In this extension step, the semiconductor wafer on which the portion corresponding to the cut-off portion of the bonding film is located on the bonding film also cuts, and the semiconductor wafer is singulated on the bonding wafer or the cutting tape It is a plurality of semiconductor wafers. Secondly, in order to increase the separation distance of the plurality of semiconductor wafers with a crystal bonding film after being cut on the dicing tape, the stretching step is performed again. Secondly, for example, after the cleaning step, each semiconductor wafer and the die-bonding film of the same size as the wafer that is in close contact with it are lifted from the lower side of the dicing tape by the pins of the pick-up mechanism, and then picked up from the dicing tape . In this way, a semiconductor wafer with a viscous crystal film is obtained. The semiconductor wafer with a die-bonding film is fixed to a substrate such as a mounting substrate by die-bonding through the die-bonding film. For example, the technology related to the die-cut crystal bonding film used as described above is described in Patent Documents 1 to 3 below, for example. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2007-2173 [Patent Document 2] Japanese Patent Laid-Open No. 2010-177401 [Patent Document 3] Japanese Patent Laid-Open No. 2012-23161

[Problems to be solved by the invention]

FIG. 15 shows the cross-sectional schematic diagram of the previous type of die-cut crystal bonding film Y. The die-cut die-bonding film Y includes a die-cutting tape 60 and a die-bonding film 70. The dicing tape 60 has a laminated structure of a base material 61 and an adhesive layer 62 exerting an adhesive force. The adhesive film 70 utilizes the adhesive force of the adhesive layer 62 to be in close contact with the adhesive layer 62. Such a die-cut die-bonding film Y has a disc shape of a size corresponding to a semiconductor wafer that is a processing object or a workpiece in the manufacturing process of a semiconductor device, and can be used for the above-mentioned extending step. For example, as shown in FIG. 16, the above-mentioned extending step is performed in a state where the semiconductor wafer 81 is bonded to the die-bonding film 70 and the ring frame 82 is attached to the adhesive layer 62. The semiconductor wafer 81 is processed by, for example, singulation into a plurality of semiconductor chips.

The ring frame 82 is a frame member that mechanically abuts a conveying mechanism such as a conveying arm provided in the stretching device when the workpiece is conveyed in a state of being attached to the die-bonding film Y. The previous die-cut die-bonding film Y is designed in such a manner that the ring frame 82 can be fixed to the film by using the adhesive force of the adhesive layer 62 of the die-cut tape 60. That is, the prior-type die-cut die-bonding film Y is a designer having an area around the die-bonding film 70 in the adhesive layer 62 of the die-cut tape 60 to secure the area for bonding the ring frame. In this design, the distance in the film plane direction between the outer peripheral end 62e of the adhesive layer 62 and the outer peripheral end 70e of the adhesive film 70 is about 10 to 30 mm.

The present invention was conceived based on the circumstances described above, and its object is to provide a die-cut die-bonding film which is suitable for ensuring the cut-off property in the extension step and realize Adhesive layer of the adhesive film of the frame member with good adhesion. [Technical means to solve the problem]

The die-cut adhesive film provided by the present invention includes a die-cut tape and an adhesive adhesive layer as the adhesive film. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive layer is a layer of adhesive that can be peelably adhered to the dicing tape. The adhesive adhesive layer was measured under the conditions of an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10 °C/min. The tensile storage modulus (first tensile storage modulus) at 25°C is 5 to 120 MPa. In addition, the thickness of the adhesive layer on the sample sheet of the adhesive layer with a width of 5 mm and a thickness of 80 μm is under the conditions of an initial chuck distance of 10 mm, a frequency of 900 Hz, a dynamic strain of 0.005%, and a heating rate of 5°C/min. The measured tensile storage modulus (second tensile storage modulus) at -15°C is 3000 to 6000 MPa. The die-cut die-bonding film with such a structure can be used to obtain a semiconductor wafer with a die-bonding film attached during the manufacturing process of a semiconductor device.

In the manufacturing process of a semiconductor device, in order to obtain a semiconductor wafer with a die-bonding film attached as described above, there are cases where an extension step performed using a die-bonding film, that is, an extension step for dicing is performed. In this extension step, it is required that both the workpiece such as a semiconductor wafer and the frame member such as the ring frame are held in the die-bonding die-bonding film, and the die-bonding film can be cut by the extension of the die-cutting tape.

Regarding the adhesive bonding agent layer of the die-bonding film as the present die-cutting die-bonding film, as described above, the first tensile storage modulus at 25°C is 5 to 120 MPa. Such a structure is more suitable for ensuring the bonding force to the frame member such as a ring frame at room temperature in the die-cut adhesive film or in the adhesive adhesive layer. Specifically, this configuration is suitable in that the frame member is appropriately attached to the die-cut die-bonding film or its adhesive adhesive layer at normal temperature. In addition, this configuration is more suitable for achieving good adhesion in the adhesive adhesive layer at normal temperature before and after the stretching step. The die-cut die-bonding film requires no paste residue on the frame member when peeling from the frame member attached to it (prevention of residue during peeling), and the result is adhesion to the die-cut die-bonding film From the viewpoint of preventing residues during peeling at normal temperature in the agent layer, the first tensile storage modulus at 25°C is preferably 6 MPa or more, and more preferably 7 MPa or more. From the viewpoint of achieving a higher bonding force to the frame member at normal temperature in the adhesive layer, the first tensile storage modulus at 25°C is preferably 110 MPa or less, more preferably 100 MPa or less .

In addition, as described above, the adhesive bonding agent layer of the die-cut adhesive film is as described above, and the second tensile storage modulus at -15°C is 3000 to 6000 MPa. This configuration is suitable for cutting off the adhesive layer in the extension step carried out at a low temperature of -15°C and its vicinity, and is more suitable in terms of securing the bonding force to the frame member at a low temperature in the adhesive layer. From the viewpoint of achieving good cleavage at low temperatures in the adhesive layer, the second tensile storage modulus at -15°C is preferably 3200 MPa or more, and more preferably 3500 MPa or more. From the viewpoint of achieving higher adhesion at low temperature in the adhesive layer, the second tensile storage modulus at -15°C is preferably 5800 MPa or less, and more preferably 5500 MPa or less. There is a tendency that the higher the bonding force to the frame member at the temperature of the extension step is, the more the peeling of the adhesive layer or the die-cut adhesive film from the frame member in the extension step is suppressed.

As described above, the die-cut die-bonding film is suitable for its adhesive bond layer to ensure the cutting property in the extending step, and to achieve good adhesion to frame members such as ring frames.

Such a die-cut die-bonding film can be applied to the die-cut tape or its adhesive layer and the adhesive agent on the die-bonding adhesive layer in addition to the work bonding area and including the frame bonding area The layers are designed with substantially the same size in the in-plane direction of the film. For example, it can be designed in the in-plane direction of the die-cut adhesive film, and the outer peripheral end of the adhesive layer is located within a distance of 1000 μm from each peripheral end of the substrate of the die-cut tape or the adhesive layer. This type of die-cut crystal bonding film is suitable for performing a process for forming a dicing tape having a laminated structure of a substrate and an adhesive layer at one time by a stamping process and the like, and for forming an adhesive adhesive layer Or processing of crystal film.

In the manufacturing process of the above-mentioned prior-type crystalline die-bonding film Y, a processing step (first processing step) for forming a dicing tape 60 of a specific size and shape, and a bonding step for forming a specific size and shape The processing step (second processing step) of the crystal film 70 is necessary as another step. In the first processing step, for example, for a laminated sheet having a specific separator, a base material layer formed as a base material 61, and an adhesive layer formed therebetween as an adhesive layer 62 Body, inserting the processing knife into the separator from the side of the base material layer. Thereby, the dicing tape 60 having the laminated structure of the adhesive layer 62 and the base material 61 on the spacer is formed on the spacer. In the second processing step, for example, for a laminated sheet body having a laminated structure of a specific spacer and a viscous film formed as a viscous film 70, a process of inserting a processing knife from the side of the viscous film to the spacer is performed . Thereby, the crystal bonding film 70 is formed on the spacer. The dicing tape 60 and the die-bonding film 70 thus formed in another step are then aligned and bonded. FIG. 17 shows a previous type of die-cut die-bonding film Y with a spacer 83 covering the surface of the die-bonding film 70 and the surface of the adhesive layer 62.

In contrast, when the die-cut tape or its adhesive layer and the adhesive layer thereon have substantially the same design dimensions in the film plane direction, the die-cut adhesive film of the present invention is suitable for one-time stamping processing, etc. In the processing, the following processing is performed at once, that is, processing for forming a dicing tape having a laminated structure of a base material and an adhesive layer, and processing for forming an adhesive adhesive layer. Such an original die-cut adhesive film is suitable for ensuring the cutting property in the extension step in the adhesive adhesive layer, and achieving good adhesion to the frame member, and is suitable for reducing the number of manufacturing steps or suppressing the manufacturing cost, etc. Manufacturing efficiently.

The shear adhesion of the die-cut adhesive film to the SUS plane of the adhesive layer at -15°C is preferably 66 N/cm ² or more, more preferably 68 N/cm ² or more, and even more preferably 70 N/ cm ² or more. The shear adhesion is set to the value measured by the shear adhesion measurement method described below with respect to the examples. The structure related to the shear adhesive force is more suitable for ensuring the maintenance of the frame member of the original crystal-cut adhesive film at a low temperature of -15°C and its vicinity.

The adhesive layer of the die-cut adhesive film preferably contains a polymer component having a weight average molecular weight of 800,000 to 2,000,000 and a glass transition temperature of -10 to 3°C. Such a configuration is more suitable for achieving balance between the cutoff property of the adhesive agent layer at a low temperature, the adhesion force of the adhesive agent layer to the frame member, and the prevention of residues during peeling of the adhesive agent layer. From the viewpoint of ensuring the cut-off property at a low temperature of the adhesive layer or preventing the residue during peeling, the weight average molecular weight of the polymer is more preferably 900,000 or more, and still more preferably 1,000,000 or more. From the viewpoint of ensuring the adhesion of the adhesive layer to the frame member, the weight-average molecular weight of the polymer is preferably 1.8 million or less, and more preferably 1.5 million or less. From the viewpoint of ensuring the cut-off property at a low temperature of the adhesive layer, the glass transition temperature of the polymer is more preferably -8°C or higher, more preferably -6.5°C or higher. From the standpoint of ensuring the adhesion to the frame member at a low temperature of the adhesive layer, the glass transition temperature of the polymer is more preferably 0°C or lower, more preferably -1.5°C or lower.

The polymer component in the adhesive layer preferably contains a structural unit derived from acrylonitrile. In this structure, the nitrile group in the unit of the polymer component in the adhesive layer is highly polarized, so in the adhesive layer, high adhesion to metal frame members such as ring frames made of SUS is achieved It’s better.

The adhesive bonding agent layer of the present die-cut adhesive film preferably contains a silica filler at a ratio of 10 to 40% by mass. The content of the silica filler in the adhesive adhesive layer is 10% by mass or more. It is preferable in terms of ensuring the cut-off property in the extension step in the adhesive adhesive layer, and in order to ensure the cohesive force in the adhesive adhesive layer. It is preferable to seek the prevention of the residue at the time of peeling. In terms of ensuring the adhesion to the frame member at low temperature in the adhesive layer, the content of the silica filler in the adhesive layer is preferably 40% by mass or less, more preferably 30% by mass or less, and even more preferably 25 Mass% or less.

The adhesive layer of the dicing tape of the dicing adhesive film is preferably a radiation hardening type adhesive layer. When the adhesive layer of the dicing tape is a radiation hardening type adhesive layer, before the radiation hardening in the T-type peeling test under the conditions of 23° C. and a peeling speed of 300 mm/min in this dicing film The peeling force between the adhesive layer and the adhesive layer is preferably 0.5 N/20 mm or more. Such a structure related to peeling adhesion is preferable in terms of ensuring the adhesion force to the frame member in the adhesive adhesive layer.

The thickness of the adhesive layer in the die-cut adhesive film is preferably 7-30 μm. It is preferable that the adhesive layer with a thickness of 7 μm or more is formed in such a manner that the adhesive layer to which the frame member is attached follows the fine irregularities on the surface of the frame member to exhibit good frame member adhesion. It is preferable that the thickness of the adhesive layer is 30 μm or less in terms of ensuring the cutting property in the extending step in the adhesive layer.

FIG. 1 is a schematic cross-sectional view of a die-cut crystal bonding film X according to an embodiment of the present invention. The die cut adhesive film X has a laminated structure including the die cut tape 10 and the adhesive layer 20. The dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12. The adhesive layer 12 has an adhesive surface 12a on the adhesive layer 20 side. The adhesive layer 20 includes a work bonding area and a frame bonding area, and is peelably adhered to the adhesive layer 12 of the dicing tape 10 or its adhesive surface 12a. The die-bonding die-bonding film X can be used in the process of obtaining a semiconductor wafer with a die-bonding film attached in the manufacturing process of a semiconductor device, for example, in the extending step described below. Moreover, the die-bonding film X has a disc shape with a size corresponding to the semiconductor wafer to be processed in the manufacturing process of the semiconductor device, and its diameter is, for example, in the range of 345 to 380 mm (corresponding to a 12-inch wafer) Type), within the range of 245 to 280 mm (8-inch wafer corresponding type), within the range of 195 to 230 mm (6 inch wafer corresponding type), or within the range of 495 to 530 mm (18 inch crystal Circle corresponding type).

The base material 11 of the dicing tape 10 is an element that functions as a support in the dicing tape 10 or the dicing die-bonding film X. The substrate 11 is, for example, a plastic substrate, and as the plastic substrate, a plastic film can be suitably used. Examples of the constituent material of the plastic substrate include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, and polyimide, Polyetherimide, polyamide, fully aromatic polyamide, polyphenylene sulfide, aromatic polyamide, fluororesin, cellulose resin, and polysiloxane resin. Examples of polyolefins include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homopolymers. Polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, Ethylene-butene copolymer and ethylene-hexene copolymer. Examples of the polyester include polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The substrate 11 may include one kind of material, or two or more kinds of materials. The base material 11 may have a single-layer structure or a multi-layer structure. In addition, when the base material 11 includes a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film. When the adhesive layer 12 on the base material 11 has ultraviolet curability as described below, the base material 11 preferably has ultraviolet transmittance.

In the process of using the die-cut die-bonding film X, for example, when the die-cut tape 10 or the substrate 11 is shrunk by partial heating, the substrate 11 preferably has heat shrinkability. From the viewpoint of ensuring good heat shrinkability in the base material 11, the base material 11 preferably contains an ethylene-vinyl acetate copolymer as a main component. The main component of the base material 11 is the component that accounts for the largest mass ratio among the base component components. In addition, when the base material 11 includes a plastic film, the base material 11 is preferably a biaxially stretched film in terms of achieving isotropic thermal shrinkage of the dicing tape 10 or the base material 11. Regarding the dicing tape 10 or the base material 11, the heat shrinkage rate in the heat treatment test performed under the conditions of a heating temperature of 100°C and a heat treatment time of 60 seconds is, for example, 2 to 30%.

The surface of the substrate 11 on the side of the adhesive layer 12 may also be subjected to physical treatment, chemical treatment, or primer treatment to improve the adhesion with the adhesive layer 12. Examples of the physical treatment include corona treatment, plasma treatment, sandblasting treatment, ozone exposure treatment, flame exposure treatment, high-voltage electric shock exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment. The treatment for improving the adhesion is preferably performed on the entire surface of the substrate 11 on the adhesive layer 12 side.

The thickness of the base material 11 is preferably 40 μm or more in view of ensuring the strength of the base material 11 serving as a support in the dicing tape 10 or the crystalline die bonding film X to function. 50 μm or more, more preferably 55 μm or more, and more preferably 60 μm or more. Also, from the viewpoint of achieving moderate flexibility in the dicing tape 10 or the dicing die-bonding film X, the thickness of the substrate 11 is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 Below μm.

The adhesive layer 12 of the dicing tape 10 contains an adhesive. The adhesive may be an adhesive that can intentionally reduce the adhesive force by an external effect such as radiation irradiation or heating (adhesive-reducing adhesive), or it may be an adhesive force that is hardly or completely not affected by an external effect Reduced adhesive (non-reduced adhesive). Regarding whether to use an adhesive-reducing adhesive as the adhesive in the adhesive layer 12 or whether to use a non-adhesive-type adhesive as the adhesive in the adhesive layer 12, the singulated semiconductor can be regarded as using the diced die-bonding film X The use of the die-bonding die-bonding film X such as the singulation method or conditions of the wafer is appropriately selected.

In the case of using an adhesive-reducing adhesive as the adhesive in the adhesive layer 12, during the use of the slicing adhesive film X, the adhesive layer 12 can be used separately to show a relatively high adhesive state , And show a relatively low adhesion state. For example, when the die-cut adhesive film X is used in the following extension step, in order to suppress and prevent the adhesive layer 20 from bulging or peeling off from the adhesive layer 12, the high adhesive state of the adhesive layer 12 is used, and On the one hand, thereafter, in the following pickup step for picking up the semiconductor wafer with the adhesive layer from the dicing tape 10 of the dicing die-bonding film X, in order to easily pick up the adhesion with the adhesive layer 12 The semiconductor wafer with the adhesive layer can utilize the low adhesive state of the adhesive layer 12.

Examples of such adhesive force-reducing adhesives include radiation-curing adhesives (radiation-curing adhesives) and heat-foaming adhesives. In the adhesive layer 12 of the present embodiment, one kind of adhesive-reducing adhesive may be used, or two or more kinds of adhesive-reducing adhesives may be used. In addition, the whole of the adhesive layer 12 may be formed of an adhesive with reduced adhesion, or a part of the adhesive layer 12 may be formed of an adhesive with reduced adhesion. For example, in the case where the adhesive layer 12 has a single-layer structure, the entire adhesive layer 12 may be formed by an adhesive reduction type adhesive, or a specific portion of the adhesive layer 12 may be formed by an adhesive reduction type adhesive. Formation, while the other parts are formed by non-adhesive adhesives. In addition, when the adhesive layer 12 has a laminated structure, all the layers that can constitute the laminated structure are formed by the adhesive reduction type adhesive, or a part of the layers in the laminated structure may be formed by the adhesive reduction type adhesive.

As the radiation-curable adhesive in the adhesive layer 12, for example, an adhesive that is hardened by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X rays can be used, and it can be particularly suitably used Adhesive of the type hardened by ultraviolet irradiation (ultraviolet-curable adhesive).

Examples of the radiation-curable adhesive in the adhesive layer 12 include the following addition-type radiation-curable adhesives, which contain a base polymer such as an acrylic polymer as an acrylic adhesive and a carbon having radiation polymerization -Radiation polymerizable monomer components or oligomer components of functional groups such as carbon double bonds.

The acrylic polymer preferably contains monomer units derived from acrylate and/or methacrylate as the most monomer units in terms of mass ratio. In the following, "(meth)acrylic acid" means "acrylic acid" and/or "methacrylic acid", and "(meth)acrylate" means "acrylate" and/or "methacrylate".

Examples of (meth)acrylic acid esters used to form monomer units of acrylic polymers include alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates. (Hydroxy)-containing (meth) acrylate. Examples of alkyl (meth)acrylates include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, second butyl, and third butyl (meth)acrylate. Amyl, isoamyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl, deca Trialkyl ester, myristyl ester, hexadecyl ester, octadecyl ester, and eicosyl ester. Examples of cycloalkyl (meth)acrylates include cyclopentyl (meth)acrylate and cyclohexyl ester. Examples of aryl (meth)acrylates include phenyl (meth)acrylate and benzyl (meth)acrylate. As the monomer component for constituting the monomer unit of the acrylic polymer, one (meth)acrylate may be used, or two or more (meth)acrylates may be used. As the (meth)acrylate used to constitute the monomer unit of the acrylic polymer, it is preferably an alkyl (meth)acrylate having an alkyl group of 10 or more carbon atoms, more preferably dodecyl acrylate . In addition, in order to properly display the basic characteristics such as adhesion caused by (meth)acrylate in the adhesive layer 12, (meth)acrylic acid is used to form all the monomer components of the acrylic polymer The ratio of the ester is preferably 40% by mass or more, and more preferably 60% by mass or more.

The acrylic polymer may contain monomer units derived from other monomers copolymerizable with (meth)acrylate in order to modify its cohesive strength, heat resistance, and the like. Examples of such other monomers include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, Functional monomers such as acrylamide and acrylonitrile. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, 2-carboxyethyl (meth)acrylate, 5-carboxypentyl (meth)acrylate, itaconic acid, maleic acid, trans Crotonic acid and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and (meth)acrylic acid 6. -Hydroxyhexyl ester, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxydodecyl (meth)acrylate, and (4- (meth)acrylic acid) Hydroxymethylcyclohexyl) methyl ester. Examples of the glycidyl group-containing monomer include glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Examples of sulfonic acid group-containing monomers include styrene sulfonic acid, allyl sulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, and (meth)acrylamide propane Sulfonic acid, and sulfopropyl (meth)acrylate. Examples of phosphoric acid group-containing monomers include 2-hydroxyethyl acryl phosphate. As the other copolymerizable monomer used in the acrylic polymer, one kind of monomer may be used, or two or more kinds of monomers may be used.

In order to form a cross-linked structure in its polymer backbone, the acrylic polymer may contain monomer units derived from a multifunctional monomer copolymerizable with monomer components such as (meth)acrylate. Examples of such multifunctional monomers include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, Neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(methyl) Acrylate, poly(glycidyl) (meth)acrylate, (meth)acrylic polyester, and (meth)acrylic acid urethane. As the monomer component for the acrylic polymer, one type of multifunctional monomer may be used, or two or more types of multifunctional monomers may be used. Regarding the ratio of polyfunctional monomers in all monomer components used to form the acrylic polymer, the adhesive layer 12 appropriately exhibits basic characteristics such as adhesion caused by (meth)acrylate In respect of this, it is preferably 40% by mass or less, and preferably 30% by mass or less.

The acrylic polymer can be obtained by polymerizing raw material monomers used to form it. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of the high degree of cleanliness in the method of manufacturing a semiconductor device using the dicing tape 10 or the dicing adhesive film X, it is preferably in the adhesive layer 12 in the dicing tape 10 or the crystalline die bonding film X There are few low molecular weight substances, and the weight average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000.

In order to increase the weight average molecular weight of a base polymer such as an acrylic polymer, the adhesive layer 12 or the adhesive used to constitute it may contain an external crosslinking agent, for example. Examples of the external crosslinking agent that reacts with a base polymer such as an acrylic polymer to form a crosslinked structure include polyisocyanate compounds, epoxy compounds, polyol compounds (polyphenolic compounds, etc.), aziridine Compounds, and melamine-based crosslinking agents. The content of the external crosslinking agent in the adhesive layer 12 or the adhesive used to constitute it is preferably 6 parts by mass or less relative to 100 parts by mass of the base polymer, and more preferably 0.1 to 5 parts by mass.

Examples of the above-mentioned radiation-polymerizable monomer component constituting the radiation-curable adhesive include, for example, (meth)acrylate carbamate, trimethylolpropane tri(meth)acrylate, and pentaerythritol tri(meth) Base) acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate ester. Examples of the radiation-polymerizable oligomer component constituting the radiation-curable adhesive include various types such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based. The oligomer is preferably about 100 to 30,000 in molecular weight. The total content of the radiation-polymerizable monomer component or oligomer component in the radiation-curing adhesive is determined within a range in which the adhesive force of the formed adhesive layer 12 can be appropriately reduced by radiation irradiation, relative to 100 parts by mass of the base polymer such as acrylic polymer is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass. In addition, as an additive type radiation-curable adhesive, for example, it can be used as disclosed in Japanese Patent Laid-Open No. 60-196956.

As the radiation-curing adhesive in the adhesive layer 12, for example, an intrinsic type radiation-curing adhesive can also be mentioned, which is contained in the polymer side chain, or the polymer main chain, and the polymer main chain terminal has radiation polymerizability The basic polymer of carbon-carbon double bond and other functional groups. Such an internal type radiation-curing adhesive is suitable for suppressing undesirable temporal changes in adhesive properties caused by the movement of low-molecular-weight components in the formed adhesive layer 12.

As the base polymer contained in the internal radiation-curing adhesive, an acrylic polymer is preferably used as a basic skeleton. As the acrylic polymer constituting such a basic skeleton, the above-mentioned acrylic polymer in the additive type radiation-curing adhesive can be used. As a method of introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, the following method may be mentioned: copolymerizing a raw material monomer containing a monomer having a specific functional group (first functional group) After the acrylic polymer is obtained, a specific functional group (second functional group) capable of bonding with the first functional group by reacting with the first functional group is maintained while maintaining the radiation polymerizability of the carbon-carbon double bond Compounds with radiation-polymerizable carbon-carbon double bonds undergo condensation reactions or addition reactions with acrylic polymers.

Examples of the combination of the first functional group and the second functional group include carboxyl group and epoxy group, epoxy group and carboxyl group, carboxyl group and aziridine group, aziridine group and carboxyl group, hydroxyl group and isocyanate group, and isocyanate group With hydroxyl. Among these combinations, from the viewpoint of ease of reaction tracking, a combination of a hydroxyl group and an isocyanate group, or a combination of an isocyanate group and a hydroxyl group is more suitable. In addition, since the technical difficulty of producing a polymer having an isocyanate group with higher reactivity is higher, it is more suitable for the acrylic polymer side as described above in terms of the ease of production or acquisition of the acrylic polymer When the first functional group is a hydroxyl group and the second functional group is an isocyanate group. In this case, examples of the isocyanate compound having a radiation-polymerizable carbon-carbon double bond and an isocyanate group as the second functional group, that is, an isocyanate compound containing a radiation-polymerizable unsaturated functional group include, for example, isocyanate Methacrylic acid methacrylate, 2-methacrylic acid ethyl isocyanate (MOI), and α,α-dimethylbenzyl isopropenyl isocyanate.

系化合物、樟腦醌、鹵化酮、醯基氧化膦、及醯基磷酸酯。作為α-酮醇系化合物，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、及1-羥基環己基苯基酮。作為苯乙酮系化合物，例如可列舉：甲氧基苯乙酮、2,2-二甲氧基-1,2-二苯乙烷-1-酮、2,2-二乙氧基苯乙酮、及2-甲基-1-[4-(甲硫基)-苯基]-2-嗎啉基丙烷-1。作為安息香醚系化合物，例如可列舉：安息香乙醚、安息香異丙醚、及茴香偶姻甲醚。作為縮酮系化合物，例如可列舉苯偶醯二甲基縮酮。作為芳香族磺醯氯系化合物，例如可列舉2-萘磺醯氯。作為光活性肟系化合物，例如可列舉1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟。作為二苯甲酮系化合物，例如可列舉：二苯甲酮、苯甲醯苯甲酸、及3,3'-二甲基-4-甲氧基二苯甲酮。作為9-氧硫𠮿

系化合物，例如可列舉：9-氧硫𠮿

、2-氯-9-氧硫𠮿

、2-甲基-9-氧硫𠮿

、2,4-二甲基-9-氧硫𠮿

、異丙基-9-氧硫𠮿

、2,4-二氯-9-氧硫𠮿

、2,4-二乙基-9-氧硫𠮿

、及2,4-二異丙基-9-氧硫𠮿

。黏著劑層12中之放射線硬化性黏著劑中之光聚合起始劑之含量相對於丙烯酸系聚合物等基礎聚合物100質量份，例如為0.05～20質量份。The radiation hardening adhesive in the adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include: α-ketol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, aromatic sulfonyl chloride-based compounds, photoactive oxime-based compounds, and diphenyl Ketone-based compounds, 9-oxygen sulfur 𠮿

Compounds, camphorquinones, halogenated ketones, acyl phosphine oxides, and acyl phosphates. Examples of the α-keto alcohol-based compound include 4-(2-hydroxyethoxy)phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α,α'-dimethyl styrene Ketone, 2-methyl-2-hydroxyphenylacetone, and 1-hydroxycyclohexylphenyl ketone. Examples of the acetophenone-based compound include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, and 2,2-diethoxyphenethyl Ketone, and 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinylpropane-1. Examples of the benzoin ether-based compound include benzoin ether, benzoin isopropyl ether, and anisin methyl ether. Examples of the ketal-based compound include benzoyl dimethyl ketal. Examples of the aromatic sulfonyl chloride-based compound include 2-naphthalene sulfonyl chloride. Examples of the photoactive oxime-based compound include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime. Examples of the benzophenone-based compound include benzophenone, benzoyl benzoic acid, and 3,3′-dimethyl-4-methoxybenzophenone. As 9-oxygen sulfur 𠮿

Compounds, for example, 9-oxosulfur 𠮿

、2-chloro-9-oxygen and sulfur 𠮿

、2-Methyl-9-oxysulfur 𠮿

、2,4-Dimethyl-9-oxysulfur𠮿

、Isopropyl-9-oxysulfur 𠮿

、2,4-Dichloro-9-oxysulfur 𠮿

、2,4-Diethyl-9-oxysulfur𠮿

, And 2,4-diisopropyl-9-oxysulfur 𠮿

. The content of the photopolymerization initiator in the radiation-curable adhesive in the adhesive layer 12 is, for example, 0.05 to 20 parts by mass relative to 100 parts by mass of the base polymer such as acrylic polymer.

The above-mentioned heat-foaming adhesive in the adhesive layer 12 is an adhesive containing a component that foams or expands by heating. Examples of components that foam or expand by heating include foaming agents and thermally expandable microspheres.

Examples of the foaming agent for the heat-foaming adhesive include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium boron hydride, and azides. Examples of the organic foaming agent include salt fluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azobisisobutyronitrile, azodimethylformamide, and barium azodicarboxylate. Nitrogen compounds; p-toluenesulfonyl hydrazide or diphenylsulfon-3,3'-disulfonyl hydrazide, 4,4'-oxybis(benzenesulfonyl hydrazide), allyl bis(sulfonyl hydrazide) (Hydrazide) and other hydrazine compounds; ρ-1,2-stilbene sulfonylamidourea or 4,4'-oxybis(benzenesulfonylamidourea) and other aminourea compounds; 5-morpholine -1,2,3,4-thitriazole and other triazole compounds; and N,N'-dinitrosopentamethylenetetramine or N,N'-dimethyl-N,N'- N-nitroso compounds such as dinitroso-p-xylylenediamine.

Examples of the heat-expandable microspheres for heating and foaming adhesives include microspheres composed of a substance that is easily vaporized by heating and expanded into a shell. Examples of the substance that easily evaporates by heating and expands include isobutane, propane, and pentane. Thermally expandable microspheres can be produced by encapsulating substances that are easily vaporized by heating and encapsulated in shell-forming substances by agglomeration method, interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal melting property or a substance that can be broken by the thermal expansion of the enclosed substance can be used. Examples of such a substance include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polyphenol.

Examples of the adhesive non-reducing adhesive in the adhesive layer 12 include pressure-sensitive adhesives. As the pressure-sensitive adhesive, for example, an acrylic adhesive or a rubber adhesive using an acrylic polymer as a base polymer can be used. When the adhesive layer 12 contains an acrylic adhesive as a pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic adhesive preferably contains a monomer derived from (meth)acrylate The unit serves as the largest monomer unit in terms of mass ratio. As such an acrylic polymer, for example, the radiation-curable adhesive includes the above-mentioned acrylic polymer.

As the pressure-sensitive adhesive in the adhesive layer 12, as the adhesive force-reducing adhesive, an adhesive in a form in which the above-mentioned radiation hardening adhesive is hardened by radiation irradiation can be used. This type of hardened radiation hardening type adhesive can show the adhesion caused by the polymer component by the content of the polymer component even if the adhesive strength of the radiation radiation is reduced due to radiation irradiation, and can be used in a specific use mode It can be used to adhere and maintain the adhesion of the attached body.

In the adhesive layer 12 of the present embodiment, one kind of non-adhesive non-reducing adhesive may be used, or two or more kinds of non-adhesive non-reducing adhesives may be used. In addition, the entire adhesive layer 12 may be formed using a non-reducing adhesive, or a portion of the adhesive layer 12 may be formed using a non-reducing adhesive. For example, in the case where the adhesive layer 12 has a single-layer structure, the entire non-reducing adhesive can be used to form the entire adhesive layer 12, and the non-reducing adhesive can be used to form a specific layer of the adhesive layer 12. Parts can also be used to form other parts using adhesives with reduced adhesion. In addition, when the adhesive layer 12 has a build-up structure, all layers constituting the build-up structure may be formed using a non-reducing adhesive, or a part of the layers in the build-up structure may also be formed using a non-reducing adhesive.

The adhesive layer 12 or the adhesive used to constitute it may contain a crosslinking accelerator, an adhesion-imparting agent, an anti-aging agent, a coloring agent, etc. in addition to the above-mentioned components. Examples of the colorant include pigments and dyes. In addition, the colorant may be a compound that is colored by irradiation with radiation. Examples of such compounds include leuco dyes.

The thickness of the adhesive layer 12 is preferably 1-50 μm, more preferably 2-30 μm, still more preferably 5-25 μm. Such a configuration is suitable, for example, in the case where the adhesive layer 12 contains a radiation-curable adhesive, in terms of obtaining a balance between the adhesive force of the adhesive layer 12 to the adhesive adhesive layer 20 before and after radiation curing.

The adhesive bonding layer 20 of the die-bonding film X also functions as an adhesive that exhibits thermosetting properties for crystal bonding, and is used to hold a semiconductor wafer and other workpieces to the frame member such as the following ring frame Features. In this embodiment, the adhesive used to form the adhesive layer 20 may have a composition containing a thermosetting resin and, for example, a thermoplastic resin as an adhesive component, or may include a tape that can react with the curing agent to produce The thermosetting functional group of the thermoplastic resin bond. In the case where the adhesive agent used to form the adhesive agent layer 20 has a composition including a thermoplastic resin with a thermosetting functional group, the adhesive agent does not need to further include a thermosetting resin (epoxy resin, etc.). Such an adhesive layer 20 may have a single-layer structure or a multi-layer structure.

When the adhesive agent layer 20 contains a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amine-based resin, unsaturated polyester resin, and polyamine-based Formate resin, polysiloxane resin, and thermosetting polyimide resin. As the thermosetting resin in the adhesive layer 20, one resin may be used, or two or more resins may be used. Since there is a tendency for the content of ionic impurities and the like that may cause corrosion of the semiconductor wafer to be bonded to the crystal to be small, the thermosetting resin contained in the adhesive bond layer 20 is preferably epoxy resin. In addition, as the curing agent of the epoxy resin, a phenol resin is preferred.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, and stilbene. Type, phenolic novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoin type, triglycidyl isocyanurate type, and glycidyl amine Type epoxy resin. Novolac-type epoxy resin, biphenyl-type epoxy resin, trihydroxyphenylmethane-type epoxy resin, and tetraphenol-based epoxide-type epoxy resin are rich in reactivity with phenol resin as a curing agent and have excellent heat resistance Therefore, it is preferable as the epoxy resin contained in the adhesive layer 20.

Examples of the phenol resin that can function as a curing agent for epoxy resin include novolac type phenol resin, soluble phenol type phenol resin, and polyoxystyrene such as poly-p-hydroxystyrene. Examples of the novolak type phenol resins include phenol novolak resins, phenol aralkyl resins, cresol novolak resins, tertiary butyl phenol novolak resins, and nonylphenol novolak resins. As the phenol resin that can function as a hardener for the epoxy resin, one phenol resin may be used, or two or more phenol resins may be used. Phenolic novolak resins or phenolic aralkyl resins have a tendency to improve the connection reliability of the adhesive when used as a hardener for epoxy resins used as adhesives for crystal bonding, so they are used as an adhesive adhesive layer The hardener of epoxy resin contained in 20 is preferable.

From the viewpoint of sufficiently performing the hardening reaction between the epoxy resin and the phenol resin in the adhesive layer 20, the phenol resin is based on 1 equivalent of epoxy groups in the epoxy resin component. The hydroxyl group is preferably contained in the adhesive layer 20 in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

The content ratio of the thermosetting resin in the adhesive layer 20 is preferably 5 to 60% by mass from the viewpoint of properly exhibiting the function as a thermosetting adhesive in the adhesive layer 20. It is more preferably 10 to 50% by mass.

Examples of the thermoplastic resin contained in the adhesive layer 20 include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, and ethylene-acrylic acid copolymer. Ethylene-acrylate copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, 6-nylon or 6,6-nylon polyamide resin, phenoxy resin, acrylic resin, PET Or PBT and other saturated polyester resin, polyamidoamide imide resin, and fluorine resin. As the thermoplastic resin in the adhesive layer 20, one resin may be used, or two or more resins may be used. As the thermoplastic resin contained in the adhesive layer 20, acrylic resin is preferable because it is easy to ensure the reliability of bonding by the adhesive layer 20 because there are few ionic impurities and high heat resistance.

The adhesive layer 20 preferably contains a polymer component having a weight average molecular weight of 800,000 to 2,000,000 and a glass transition temperature of -10 to 3°C as the main component of the thermoplastic resin. The main component of the thermoplastic resin is the resin component that accounts for the largest mass ratio among the thermoplastic resin components. Such a configuration is suitable for achieving balance between the cutoff property of the adhesive agent layer 20 at a low temperature, the adhesive force of the adhesive agent layer to the frame member 20, and the prevention of residues during peeling of the adhesive agent layer 20. From the viewpoint of ensuring the cut-off property of the adhesive layer 20 at low temperatures or the prevention of residues during peeling, the weight average molecular weight of the polymer is more preferably 900,000 or more, and still more preferably 1,000,000 or more. From the viewpoint of ensuring the adhesion of the adhesive layer 20 to the frame member, the weight-average molecular weight of the polymer is preferably 1.8 million or less, and more preferably 1.5 million or less. From the viewpoint of ensuring the cut-off property of the adhesive adhesive layer 20 at a low temperature, the glass transition temperature of the polymer is more preferably -8°C or higher, more preferably -6.5°C or higher. From the viewpoint of ensuring the adhesion to the frame member at a low temperature of the adhesive adhesive layer 20, the glass transition temperature of the polymer is more preferably 0°C or lower, more preferably -1.5°C or lower.

Regarding the glass transition temperature of the polymer, a glass transition temperature (theoretical value) determined based on the following Fox formula can be used. The formula of Fox is the relationship between the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of each homopolymer of the monomer in the polymer. In the following Fox formula, Tg represents the glass transition temperature of the polymer (°C), Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature of the homopolymer of the monomer i (°C ). Regarding the glass transition temperature of the homopolymer, literature values can be used. For example, in the "New Polymer Library 7 Introduction to Synthetic Resins for Coatings" (Sanka Kitaoka, Polymer Press Conference, 1995) or "Acrylate Catalog (1997 Edition)" (Mitsubishi Rayon Co., Ltd.), various examples are listed. The glass transition temperature of the homopolymer. On the other hand, the glass transition temperature of the homopolymer of the monomer can also be determined by the method specifically described in Japanese Patent Laid-Open No. 2007-51271.

Fox's formula 1/(273＋Tg)=Σ[Wi/(273＋Tgi)]

The acrylic resin contained in the adhesive layer 20 as a thermoplastic resin preferably contains a monomer unit derived from (meth)acrylate as the main monomer unit in terms of mass ratio. As such (meth)acrylate, for example, as the acrylic polymer as a component of the radiation-curable adhesive for forming the adhesive layer 12, the same (meth)acrylate as described above can be used. The acrylic resin contained in the adhesive layer 20 as a thermoplastic resin may contain monomer units derived from other monomers copolymerizable with (meth)acrylate. Examples of such other monomer components include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, and phosphoric acid group-containing monomers. , Acrylamide, acrylonitrile and other functional group-containing monomers, or various polyfunctional monomers, specifically, an acrylic polymer as a component of a radiation-curable adhesive for forming the adhesive layer 12 As the other monomer copolymerizable with (meth)acrylate, the same ones as mentioned above can be used. From the viewpoint of achieving high cohesion in the adhesive layer 20, the acrylic resin contained in the adhesive layer 20 is preferably (meth)acrylate, a carboxyl group-containing monomer, and a nitrogen atom Copolymers of monomers and multifunctional monomers. The (meth)acrylate is preferably an alkyl (meth)acrylate having 4 or less carbon atoms in the alkyl group. The polyfunctional monomer is preferably a polyglycidyl-based polyfunctional monomer. The acrylic resin contained in the adhesive layer 20 is more preferably a copolymer of ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile, and polyglycidyl (meth)acrylate.

The polymer component such as an acrylic polymer in the adhesive layer 20 contains a structural unit derived from acrylonitrile because the polymer component in the adhesive layer 20 has a high nitrile group derived from an acrylonitrile structural unit Because of the polarity, it is preferable in the adhesive layer 20 to achieve high adhesion to metal frame members such as ring frames made of SUS.

When the adhesive layer 20 contains a thermosetting functional group-containing thermoplastic resin, as the thermoplastic resin, for example, an acrylic resin containing a thermosetting functional group can be used. The acrylic resin used to constitute the thermosetting functional group-containing acrylic resin preferably contains a monomer unit derived from (meth)acrylate as the main monomer unit in terms of mass ratio. As such (meth)acrylate, for example, regarding the acrylic polymer as a component of the radiation-curable adhesive for forming the adhesive layer 12, the same (meth)acrylate as described above can be used. On the other hand, examples of the thermosetting functional group for constituting the acrylic resin containing the thermosetting functional group include glycidyl group, carboxyl group, hydroxyl group, and isocyanate group. Among these, glycidyl group and carboxyl group can be suitably used. That is, as the acrylic resin containing a thermosetting functional group, an acrylic resin containing a glycidyl group or an acrylic resin containing a carboxyl group can be suitably used. Also, as a curing agent for the thermosetting functional group-containing acrylic resin, for example, as an external crosslinking agent when it is used as a component of the radiation curing adhesive for forming the adhesive layer 12 Use the above. In the case where the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenolic compound can be suitably used as a curing agent, and for example, the above-mentioned various phenolic resins can be used.

In order to achieve a certain degree of cross-linking with respect to the adhesive layer 20 before hardening for crystal bonding, for example, it is preferable to preliminarily connect a functional group at the molecular chain end of the resin contained in the adhesive layer 20 in advance The polyfunctional compound that is bonded by a reaction or the like is blended into the resin composition for forming an adhesive layer as a crosslinking agent. Such a configuration is more suitable for improving the adhesive properties of the adhesive layer 20 at high temperatures, and for improving the heat resistance. Examples of such crosslinking agents include polyisocyanate compounds. Examples of the polyisocyanate compound include toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and addition products of polyol and diisocyanate. With regard to the content of the crosslinking agent in the resin composition for forming an adhesive layer, the adhesive layer is formed with respect to 100 parts by mass of the resin having the above functional group that can react with the crosslinking agent to bond From the viewpoint of improving the cohesive force of 20, it is preferably 0.05 parts by mass or more, and from the viewpoint of improving the adhesion of the formed adhesive adhesive layer 20, it is preferably 7 parts by mass or less. In addition, as the crosslinking agent in the adhesive layer 20, other polyfunctional compounds such as epoxy resins and polyisocyanate compounds can be used in combination.

The content ratio of the high molecular weight component in the adhesive layer 20 as described above is preferably 50 to 100% by mass, more preferably 50 to 80% by mass. The high molecular weight component is a component having a weight average molecular weight of 10,000 or more. Such a configuration is preferable in terms of achieving simultaneous adhesion of the adhesive layer 20 to the frame members such as the ring frame at room temperature and the temperature near it, and prevention of residues during peeling. In addition, the adhesive layer 20 may contain a liquid resin that is liquid at 23°C. When the adhesive layer 20 contains such a liquid resin, the content ratio of the liquid resin in the adhesive layer 20 is preferably 1 to 10% by mass, more preferably 1 to 5% by mass. Such a configuration is preferable in terms of achieving simultaneous adhesion of the adhesive layer 20 to the frame members such as the ring frame at room temperature and the temperature near it, and prevention of residues during peeling.

The adhesive layer 20 may contain a filler. By blending the filler into the adhesive layer 20, the elastic modulus such as the tensile storage modulus of the adhesive layer 20 or the physical properties such as electrical conductivity and thermal conductivity can be adjusted. Examples of fillers include inorganic fillers and organic fillers, and inorganic fillers are particularly preferred. Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, and nitride Boron, crystalline silicon dioxide, amorphous silicon dioxide, in addition to aluminum, gold, silver, copper, nickel and other metal monomers, or alloys, amorphous carbon black, graphite. The filler may have various shapes such as a spherical shape, a needle shape, and a sheet shape. One kind of filler can be blended in the adhesive layer 20, and two or more kinds of fillers can also be blended. In terms of ensuring the cut-off property in the following extension step in the adhesive layer 20, the content of the silica filler in the adhesive layer 20 is preferably 10% by mass or more. In terms of ensuring the cohesive force in the adhesive layer 20 and preventing the residue from peeling off from the frame member, the content ratio of the silica filler in the adhesive layer 20 is preferably 40% by mass or less, more preferably 30% by mass or less, It is more preferably 25% by mass or less.

When the adhesive layer 20 contains a filler, the average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. The filler having an average particle size of 0.005 μm or more is suitable for the adhesive layer 20 to achieve high wettability or adhesiveness for adherends such as semiconductor wafers. The average particle diameter of the filler is 10 μm or less, which is suitable for enjoying sufficient filler addition effect in the adhesive layer 20 and ensuring heat resistance. The average particle diameter of the filler can be obtained, for example, using a photometric particle size distribution meter (trade name "LA-910", manufactured by Horiba Manufacturing Co., Ltd.).

The adhesive layer 20 may contain one or more other components as needed. Examples of the other components include flame retardants, silane coupling agents, and ion trapping agents. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropyl Methyl diethoxysilane. Examples of the ion trapping agent include hydrotalcite, bismuth hydroxide, antimony hydroxide-containing (for example, "IXE-300" manufactured by East Asia Synthesizer Co., Ltd.), and zirconium phosphate of a specific structure (for example manufactured by East Asia Synthesizer Co., Ltd.) "IXE-100"), magnesium silicate (such as "Kyoword 600" manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (such as "Kyoword 700" manufactured by Kyowa Chemical Industry Co., Ltd.). Compounds that can form complexes with metal ions can also be used as ion trapping agents. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridine-based compounds. Among these, from the viewpoint of the stability of the complex formed with the metal ion, a triazole-based compound is preferred. Examples of such triazole compounds include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, and carboxybenzene Pyrogallazole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chlorobenzotriazole Azole, 2-(2-hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-pentylbenzene Group) benzotriazole, 2-(2-hydroxy-5-third octylphenyl) benzotriazole, 6-(2-benzotriazolyl)-4-third octyl-6'- Third butyl-4'-methyl-2,2'-methylenebisphenol, 1-(2,3-dihydroxypropyl)benzotriazole, 1-(1,2-dicarboxydiethyl Group) benzotriazole, 1-(2-ethylhexylaminomethyl) benzotriazole, 2,4-di-third pentyl-6-{(H-benzotriazol-1-yl )Methyl)phenol, 2-(2-hydroxy-5-t-butylphenyl)-2H-benzotriazole, 3-[3-t-butyl-4-hydroxy-5-(5-chloro -2H-benzotriazol-2-yl)phenyl]octyl propionate, 3-[3-tertiarybutyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl )Phenyl]propionic acid-2-ethylhexyl ester, 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1, 1,3,3-tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-third butylphenol, 2-(2-hydroxy-5-methylphenyl ) Benzotriazole, 2-(2-hydroxy-5-third octylphenyl)-benzotriazole, 2-(3-third butyl-2-hydroxy-5-methylphenyl)- 5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-third pentylphenyl) benzotriazole, 2-(2-hydroxy-3,5-di-third butyl Phenyl)-5-chloro-benzotriazole, 2-[2-hydroxy-3,5-bis(1,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2 '-Methylenebis[6-(2H-benzotriazol-2-yl]-4-(1,1,3,3-tetramethylbutyl)phenol], 2-[2-hydroxy-3 ,5-bis(α,α-dimethylbenzyl)phenyl]-2H-benzotriazole, and 3-[3-(2H-benzotriazol-2-yl)-5-third butane Methyl-4-hydroxyphenyl] methyl propionate. In addition, specific hydroxyl-containing compounds such as hydroquinone compounds, hydroxyanthraquinone compounds, and polyphenol compounds can also be used as ion trapping agents. As such hydroxyl-containing compounds Examples of the compounds include 1,2-benzenediol, alizarin, anthracenol, tannin, gallic acid, methyl gallate, and pyrogallol.

The thickness of the adhesive layer 20 is, for example, in the range of 1 to 200 μm, preferably 7 to 30 μm. It is preferable that the adhesive layer 20 having a thickness of 7 μm or more, which is formed on the frame member to which the frame member is attached, follows the fine irregularities on the surface of the frame member to exhibit good frame member adhesion. The structure in which the thickness of the adhesive layer 20 is 30 μm or less is preferable in terms of ensuring the cut-off property in the following extension step in the adhesive layer 20.

The adhesive layer 20 was measured under the conditions of an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10°C/min for a 10 mm wide and 160 μm thick adhesive layer sample piece The tensile storage modulus (the first tensile storage modulus) at 25°C is 5 to 120 MPa. The first tensile storage modulus is preferably 6 MPa or more, more preferably 7 MPa or more, and preferably 110 MPa or less, more preferably 100 MPa or less.

The adhesive agent layer 20 was measured under the conditions of the distance between the initial chuck 10 mm, the frequency 900 Hz, the dynamic strain 0.005%, and the heating rate of 5 ℃/min for a sample piece of the adhesive agent layer with a width of 5 mm and a thickness of 80 μm. The tensile storage modulus (the second tensile storage modulus) at -15°C is 3000 to 6000 MPa. The second tensile storage modulus is preferably 3200 MPa or more, more preferably 3500 MPa or more, and preferably 5800 MPa or less, more preferably 5500 MPa or less.

The shear adhesion at -15°C of the SUS plane in the adhesive layer 20 is preferably 66 N/cm ² or more, more preferably 68 N/cm ² or more, and even more preferably 70 N/cm ² or more. The shear adhesion is set to the value measured by the shear adhesion measurement method described below with respect to the examples. The structure related to the shear adhesion is more suitable for ensuring the retention of the frame member of the die-cut adhesive film X at a low temperature of -15°C and its vicinity.

In this embodiment, in the in-plane direction D of the die-cut adhesive film X, the outer peripheral end 20e of the adhesive layer 20 is away from the outer peripheral end 11e of the substrate 11 in the dicing tape 10 and the outer peripheral end of the adhesive layer 12 12e is within a distance of within 1000 μm, preferably within 700 μm, more preferably within 500 μm, more preferably within 300 μm. That is, the outer peripheral end 20e of the adhesive layer 20 extends over the entire circumference, or in the direction D in the film plane, with respect to the outer peripheral ends 11e and 12e of the base material 11 and the adhesive layer 12 between 1000 μm on the inside and 1000 μm on the outside. Preferably, it is between 700 μm on the inside and 700 μm on the outside, more preferably between 500 μm on the inside and 500 μm on the outside, and more preferably between 300 μm on the inside and 300 μm on the outside. In the structure in which the dicing tape 10 or its adhesive layer 12 and the adhesive adhesive layer 20 thereon have substantially the same size in the in-plane direction D, the adhesive adhesive layer 20 is as described above except that the surface 20a side The area outside the workpiece bonding area and including the frame member bonding area.

In the die-cut die-bonding film X, when the adhesive layer 12 of the die-cut tape 10 is a radiation hardening type adhesive layer, in the T-type peeling test under the conditions of 23°C and a peeling speed of 300 mm/min The peeling force between the adhesive layer 12 and the adhesive adhesive layer 20 before radiation hardening is preferably 0.5 N/20 mm or more, and more preferably 0.6 N/20 mm or more. Such a T-type peeling test can be performed using a tensile testing machine (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). The sample piece used for this test is, for example, by attaching a tape (trade name "BT-315", manufactured by Nitto Denko Co., Ltd.) to the adhesive adhesive layer 20 side of the tangential die-bonding film X. The test piece with a width of 50 mm and a length of 120 mm is cut to make it.

The die-cut crystal bonding film X is shown in FIG. 2 and may have a spacer S. Specifically, each crystal bonding film X may adopt a sheet shape with a spacer S, or the spacer S may be in a strip shape, and a plurality of slicing crystal bonding films X are arranged on the spacer S It is wound into a roll form. The spacer S is an element for covering and protecting the surface of the adhesive bond layer 20 of the die-bonding film X. When the die-bonding film X is used, it is peeled from the film. As the separator S, for example, a surface prepared with a release agent such as polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, fluorine-based release agent, or long-chain alkyl acrylate-based release agent can be cited. Coated plastic film or paper, etc. The thickness of the spacer S is, for example, 5 to 200 μm.

The die-cut die-bonding film X having the above-mentioned structure can be manufactured as follows, for example.

First, as shown in FIG. 3( a ), an adhesive composition layer C1 is formed on the long separator S. The adhesive composition layer C1 can be formed by applying the adhesive composition prepared in the formation of the adhesive layer 20 on the separator S. Examples of the coating method of the adhesive composition include roll coating, screen coating, and gravure coating.

Next, as shown in FIG. 3(b), an adhesive composition layer C2 is formed on the adhesive composition layer C1. The adhesive composition layer C2 can be formed by applying the adhesive composition prepared in the formation of the adhesive layer 12 on the adhesive composition layer C1. Examples of the coating method of the adhesive composition include roll coating, screen coating, and gravure coating.

Next, by a one-time heat treatment through the adhesive composition layer C1 and the adhesive composition layer C2 on the separator S, as shown in FIG. 3(c), an adhesive layer 20' and an adhesive are formed Floor 12'. In this heat treatment, the two layers are dried as needed, and a crosslinking reaction occurs in the two layers as needed. The heating temperature is, for example, 60 to 175°C, and the heating time is, for example, 0.5 to 5 minutes. The adhesive layer 20' is processed into the above-mentioned adhesive layer 20. The adhesive layer 12' is processed into the above-mentioned adhesive layer 12.

Next, as shown in FIG. 3(d), the base material 11' is pressure-bonded and bonded to the adhesive layer 12'. The base material 11' is processed into the base material 11 described above. The substrate 11' made of resin can be produced by calendering, casting in organic solvents, inflation extrusion in a closed system, T-die extrusion, co-extrusion, dry lamination, etc. Manufactured by the film production method. The film or substrate 11' after film formation is subjected to a specific surface treatment as necessary. In this step, the bonding temperature is, for example, 30 to 50°C, preferably 35 to 45°C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm, preferably 1 to 10 kgf/cm. By this step, an elongated laminated sheet body having a laminated structure of the separator S, the adhesive layer 20', the adhesive layer 12', and the substrate 11' can be obtained.

Next, as shown in FIG. 4(a), the above-mentioned laminated sheet body is processed by inserting a processing blade from the side of the base material 11' into the separator S (in FIG. 4(a), the cut is schematically indicated by a thick line). Broken parts). For example, while making the laminated sheet body flow at a constant speed in a direction F, and facing a processing knife rotatably arranged around the axis orthogonal to the direction F and used for stamping, the accompanying surface of the roller is attached The surface of the rotating roll (not shown) of the processing blade with the processing blade abuts against the base material 11' side of the laminated sheet body with a specific pushing force. In this way, the dicing tape 10 (the base material 11 and the adhesive layer 12) and the adhesive adhesive layer 20 are processed at once. After a plurality of laminates including the dicing tape 10 and the adhesive bond layer 20 are processed and formed on the spacer S in the above manner, as shown in FIG. 4(b), each laminate (dicing tape 10, adhesive bonding) The material accumulation part around the agent layer 20) is removed from the separator S.

The die-cut die-bonding film X can be manufactured in the above manner.

In the manufacturing process of a semiconductor device, after obtaining a semiconductor wafer to which a die-bonding film is attached as described above, an extension step performed using a dicing die-bonding film, that is, an extension step for severing, is performed. In this extension step, it is required that both the workpiece such as a semiconductor wafer and the frame member such as a ring frame are held in the die-bonding die-bonding film, and the die-bonding film can be cut by the extension of the die-cutting tape 10.

The adhesive bonding agent layer 20 as the die-bonding film of the dicing die-bonding film X of the above embodiment is as described above, and the first tensile storage modulus at 25° C. is 5 to 120 MPa. Such a configuration is more suitable in terms of ensuring the bonding force to the frame member such as a ring frame at normal temperature in the die-cut die-bonding film X or its adhesive adhesive layer 20. Specifically, this configuration is suitable in that the frame member is appropriately attached to the die-bonding film X or its adhesive adhesive layer 20 at normal temperature. In addition, this configuration is preferable in terms of achieving good adhesion in the adhesive adhesive layer 20 at normal temperature before and after the stretching step. The die-cut die-bonding film X requires that no paste remains on the frame member when it is peeled off from the frame member attached to it (prevention of residues during peeling), resulting in adhesion in the die-cut die-bonding film X From the viewpoint of preventing residue during peeling at normal temperature in the adhesive layer 20, the first tensile storage modulus at 25°C is preferably 6 MPa or more, and more preferably 7 MPa or more. From the viewpoint of achieving higher adhesion to the frame member at normal temperature in the adhesive layer 20, the first tensile storage modulus at 25°C is preferably 110 MPa or less, more preferably 100 MPa or less .

In addition, as described above, the adhesive bond layer 20 of the die-cut adhesive film X has a second tensile storage modulus at -15°C of 3000 to 6000 MPa. Such a structure is suitable for cutting off the adhesive layer 20 in the extension step performed at a low temperature of -15°C and its vicinity, and is more suitable in terms of ensuring the adhesion force to the frame member at low temperature in the adhesive layer 20 . From the viewpoint of achieving good cleavage at low temperature in the adhesive layer 20, the second tensile storage modulus at -15°C is preferably 3200 MPa or more, and more preferably 3500 MPa or more. From the viewpoint of achieving higher adhesion at low temperature in the adhesive layer 20, the second tensile storage modulus at -15°C is preferably 5800 MPa or less, and more preferably 5500 MPa or less. The higher the adhesion force to the frame member at the temperature of the extension step, the more the peeling of the adhesive adhesive layer 20 or the die-cut adhesive film X from the frame member in the extension step is suppressed.

As described above, the die-bonding film X in the adhesive layer 20 is suitable for ensuring the cutting property in the extending step and achieving good adhesion to frame members such as ring frames.

In addition, the dicing tape 10 or its adhesive layer 12 and the adhesive adhesive layer 20 thereon have substantially the same design dimensions of the dicing adhesive film X in the in-plane direction of the film, as described above, suitable for one-time stamping The processing is performed by performing the following processes at once, that is, a process for forming a dicing tape 10 having a laminated structure of the base material 11 and the adhesive layer 12; and a process for forming an adhesive layer 20. Such a die-cut die-bonding film X is suitable for ensuring the cutting property in the extension step in the adhesive adhesive layer 20, and achieving good adhesion to the frame member, and in terms of reduction of the number of manufacturing steps or suppression of manufacturing cost, etc. It is suitable for efficient manufacturing.

The shear adhesion at -15°C of the SUS plane in the adhesive layer 20 of the die-bonding film X is as described above, preferably 66 N/cm ² or more, more preferably 68 N/cm ² or more , More preferably 70 N/cm ² or more. Such a configuration related to shear adhesive force is more suitable for ensuring that the frame-cutting crystal film X at a low temperature of -15°C and its vicinity is used to hold the frame member.

The adhesive layer 20 of the die-bonding film X is as described above, and preferably contains a polymer component having a weight average molecular weight of 800,000 to 2,000,000 and a glass transition temperature of -10 to 3°C. Such a configuration is preferable in terms of striking the cut-off property of the adhesive adhesive layer 20 at a low temperature, the adhesion force of the adhesive adhesive layer to the frame member 20, and the balance of the prevention of residues during peeling of the adhesive adhesive layer 20. As described above, from the viewpoint of ensuring the cut-off property of the adhesive layer 20 at a low temperature or the viewpoint of preventing residue during peeling, the weight average molecular weight of the polymer is more preferably 900,000 or more, and still more preferably 1,000,000 or more. As described above, from the viewpoint of ensuring the adhesion of the adhesive layer 20 to the frame member, the weight-average molecular weight of the polymer is preferably 1.8 million or less, and more preferably 1.5 million or less. As described above, from the viewpoint of ensuring the cut-off property of the adhesive layer 20 at a low temperature, the glass transition temperature of the polymer is more preferably -8°C or higher, more preferably -6.5°C or higher. As described above, from the viewpoint of ensuring the adhesion to the frame member at a low temperature of the adhesive layer 20, the glass transition temperature of the polymer is more preferably 0°C or lower, and more preferably -1.5°C or lower.

The adhesive layer 12 of the dicing tape 10 of the dice bonding film X is preferably a radiation hardening type adhesive layer. In the case where the adhesive layer 12 of the dicing tape 10 is a radiation hardening type adhesive layer, in the T-shaped peeling test of the dicing adhesive film X under the conditions of 23° C. and a peeling speed of 300 mm/min The peeling force between the adhesive layer 12 and the adhesive adhesive layer 20 before radiation hardening is as described above, preferably 0.5 N/20 mm or more, and more preferably 0.6 N/20 mm or more. Such a configuration related to peeling adhesion is preferable in terms of ensuring the adhesion force to the frame member in the adhesive layer 20.

5 to 10 show a method of manufacturing a semiconductor device according to an embodiment of the present invention.

In the method for manufacturing a semiconductor device, first, as shown in FIGS. 5(a) and 5(b), a dividing groove 30a is formed on a semiconductor wafer W (a dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the side of the first surface Wa in the semiconductor wafer W, and wiring structures etc. (not shown) required for the semiconductor elements have been formed on the first surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is attached to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held in the state of the wafer processing tape T1 On the first surface Wa side of the semiconductor wafer W, a rotary blade of a crystal cutting device or the like is used to form a dividing groove 30a of a specific depth. The dividing groove 30a is used to separate the semiconductor wafer W into a gap of a semiconductor wafer unit (in FIGS. 5 to 7, the dividing groove 30a is schematically indicated by a thick line).

Next, as shown in FIG. 5(c), the wafer processing tape T2 having the adhesive surface T2a is attached to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is removed from the semiconductor wafer W Of stripping.

Next, as shown in FIG. 5(d), with the semiconductor wafer W held in the wafer processing tape T2, the semiconductor wafer W is thinned to a specific thickness by grinding processing from the second surface Wb (Wafer thinning step). Grinding processing can be performed using a grinding processing device equipped with grinding stones. Through this wafer thinning step, in this embodiment, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor wafers 31 is formed. Specifically, the semiconductor wafer 30A has a portion (connection portion) connected to a portion of the wafer singulated into a plurality of semiconductor wafers 31 on the second surface Wb side. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the front end on the second surface Wb side of the dividing groove 30a is, for example, 1 to 30 μm, preferably 3 to 20 μm.

Next, as shown in FIG. 6( a ), the semiconductor wafer 30A held on the wafer processing tape T2 is bonded to the adhesive adhesive layer 20 of the die-bonding film X. Thereafter, as shown in FIG. 6( b ), the wafer processing tape T2 is peeled from the semiconductor wafer 30A. In the case where the adhesive layer 12 in the diced die bonding film X is a radiation hardening adhesive layer, the adhesive can be applied to the semiconductor wafer 30A instead of the above-mentioned radiation irradiation during the manufacturing process of the diced die bonding film X After the layer 20 is bonded, the adhesive layer 12 is irradiated with ultraviolet rays or the like from the side of the base material 11. The irradiation dose is, for example, 50 to 500 mJ/cm ² , preferably 100 to 300 mJ/cm ² . The irradiation area (irradiation area R shown in FIG. 1) in the dicing die-bonding film X as a measure for reducing the adhesive force of the adhesive layer 12 is, for example, in the bonding area of the adhesive layer 20 in the adhesive layer 12 The area other than its periphery.

Next, after the ring frame 41 is attached to the adhesive adhesive layer 20 in the die-bonding film X, as shown in FIG. 7(a), the die-bonding film X with the semiconductor wafer 30A is fixed于Extender's retainer 42.

Next, the first stretching step (cooling stretching step) under relatively low temperature conditions is performed as shown in FIG. 7(b), the semiconductor wafer 30A is singulated into a plurality of semiconductor wafers 31, and the die-cut crystal is bonded The adhesive layer 20 of the film X is cut into small pieces of the adhesive layer 21 to obtain a semiconductor wafer 31 with an adhesive layer. In this step, the hollow cylinder-shaped lifting member 43 of the stretching device rises in contact with the dicing tape 10 at the lower side in the figure of the dicing die-bonding film X, and the dicing of the semiconductor wafer 30A is bonded The dicing tape 10 of the die-bonding film X extends in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. The stretching in the dicing tape 10 is performed under the condition that a tensile stress within a range of preferably 15 to 32 MPa, more preferably 20 to 32 MPa is generated. The temperature condition in the cooling and extending step is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and even more preferably -15°C. The extending speed (the speed at which the jacking member 43 rises) in the cooling and extending step is preferably 0.1 to 100 mm/sec. In addition, the stretching amount in the cooling stretching step is preferably 3 to 16 mm.

In this step, the thin-walled and easily broken portion of the semiconductor wafer 30A is severed, resulting in singulation of the semiconductor wafer 31. In addition, in this step, deformation is suppressed in each region where each semiconductor wafer 31 is in close contact with the adhesive layer 20 in close contact with the adhesive layer 12 of the extended dicing tape 10, and on the other hand, The tensile stress generated in the dicing tape 10 acts in a state where the divisional groove between the semiconductor wafers 31 does not produce such a deformation suppression effect. As a result, the portion of the adhesive layer 20 facing the dividing groove between the semiconductor wafers 31 is cut. After this step, as shown in FIG. 7(c), the lifting member 43 is lowered to release the extended state of the dicing tape 10.

Secondly, the second extension step under relatively high temperature conditions is performed as shown in FIG. 8(a) to increase the distance (separation distance) between the semiconductor wafers 31 to which the adhesive layer is attached. In this step, the hollow cylindrical lifting member 43 of the stretching device is raised again, and the dicing tape 10 of the dicing die-bonding film X is extended. The temperature condition in the second extending step is, for example, 10°C or higher, preferably 15-30°C. The extension speed (the speed at which the jack 43 is lifted) in the second extension step is, for example, 0.1 to 10 mm/sec, preferably 0.3 to 1 mm/sec. In addition, the extension amount in the second extension step is, for example, 3 to 16 mm. In this step, the separation distance of the semiconductor wafer 31 with the adhesive layer is enlarged to the extent that the semiconductor wafer 31 with the adhesive layer can be properly picked up from the dicing tape 10 in the following pickup step. After this step, as shown in FIG. 8(b), the lifting member 43 is lowered to release the extended state in the dicing tape 10. In order to suppress the reduction in the distance between the semiconductor wafers 31 with an adhesive layer attached to the dicing tape 10 after the extended state is released, it is preferable that the diced tape 10 is better than the semiconductor wafer 31 before the extended state is released. The part of the holding area further outside is heated to shrink it.

Secondly, after going through the cleaning step of cleaning the semiconductor wafer 31 side of the dicing tape 10 with the semiconductor wafer 31 with the adhesive layer attached thereto, if necessary, using a cleaning solution such as water, as shown in FIG. 9, The dicing tape 10 picks up the semiconductor wafer 31 with the adhesive layer attached (pickup step). For example, for the semiconductor wafer 31 with an adhesive layer attached to the object to be picked up, the pins 44 of the pickup mechanism are raised on the lower side of the dicing tape 10 in the figure, and after being lifted through the dicing tape 10, the suction jig 45 is used. Adsorption and retention. In the pickup step, the jacking speed of the pin 44 is, for example, 1 to 100 mm/sec, and the jacking amount of the pin 44 is, for example, 50 to 3000 μm.

Next, as shown in FIG. 10( a ), the picked up semiconductor wafer 31 with the adhesive layer attached is temporarily fixed to the specific adherend 51 via the adhesive layer 21. As the adherend 51, for example, a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a semiconductor wafer manufactured separately are mentioned. The shear adhesive force at 25° C. when the adhesive layer 21 is temporarily fixed is preferably 0.2 MPa or more and more preferably 0.2 to 10 MPa with respect to the adherend 51. The structure of the adhesive layer 21 with the shear adhesive force of 0.2 MPa or more is suitable for suppressing the adhesion between the adhesive layer 21 and the semiconductor chip 31 or the adherend 51 due to ultrasonic vibration or heating in the following wire bonding step Then the surface is shear deformed and wire bonding is performed appropriately.

Next, as shown in FIG. 10(b), the electrode pad (not shown) of the semiconductor wafer 31 and the terminal portion (not shown) of the adherend 51 are electrically connected via a bonding wire 52 (wire bonding step). The connection between the electrode pad of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 is realized by ultrasonic welding with heating, and is performed in such a manner that the adhesive layer 21 is not thermally hardened. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The heating temperature of the wire in wire bonding is, for example, 80 to 250°C, preferably 80 to 220°C. In addition, the heating time is several seconds to several minutes.

Next, as shown in FIG. 10(c), the semiconductor wafer 31 is sealed with a sealing resin 53 for protecting the semiconductor wafer 31 or the bonding wire 52 on the adherend 51 (sealing step). In this step, thermal curing of the adhesive layer 21 is performed. In this step, for example, the sealing resin 53 is formed by a transfer molding technique using a mold. As a constituent material of the sealing resin 53, for example, epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185°C, and the heating time is, for example, 60 seconds to several minutes. In the case where the hardening of the sealing resin 53 is not sufficiently performed in this step (sealing step), a hardening step is performed after this step to completely harden the sealing resin 53. In the sealing step, even when the adhesive layer 21 is not completely thermally cured, the sealing resin 53 and the adhesive layer 21 can be completely thermally cured together in the post-curing step. In the post-hardening step, the heating temperature is, for example, 165 to 185°C, and the heating time is, for example, 0.5 to 8 hours.

The semiconductor device can be manufactured in the above manner.

In this embodiment, as described above, after temporarily fixing the semiconductor wafer 31 with the adhesive layer to the adherend 51, the wire bonding step is performed without completely thermally hardening the adhesive layer 21. Instead of this configuration, after temporarily fixing the semiconductor wafer 31 with the adhesive layer to the adherend 51, the wire bonding step is performed after the adhesive layer 21 is thermally hardened.

In the method of manufacturing a semiconductor device, the wafer thinning step shown in FIG. 11 may be performed with reference to FIG. 5(d) after referring to FIG. 5(c) and after the above process, instead of the wafer thinning step. In the wafer thinning step shown in FIG. 11, with the semiconductor wafer W held in the wafer processing tape T2, the wafer is thinned to a specific level by grinding processing from the second surface Wb In the thickness, a semiconductor wafer divided body 30B including a plurality of semiconductor wafers 31 and held by the wafer processing tape T2 is formed. In this step, the dicing groove 30a itself may adopt a method of grinding the wafer until it is exposed to the second surface Wb side (first method), or it may use a method of grinding the wafer from the second surface Wb side until it is more divided The groove 30a is further forward, and thereafter, a method of forming a semiconductor wafer divided body 30B by generating a crack between the dividing groove 30a and the second surface Wb by the pressing force of the rotating grindstone against the wafer (second method). According to the method used, the depth of the dividing groove 30a formed as described above with reference to FIGS. 5(a) and 5(b) from the first surface Wa is appropriately determined. In FIG. 11, the dividing groove 30a passing through the first method or the dividing groove 30a passing through the second method and the cracks connected thereto are schematically indicated by thick lines. In this embodiment, instead of the semiconductor wafer 30A, the semiconductor wafer division 30B produced in the above manner is bonded to the die-bonding film X, and then the above steps can be performed with reference to FIGS. 6 to 10.

FIGS. 12( a) and 12 (b) show the first stretching step (cooling stretching step) performed after bonding the semiconductor wafer division 30B to the die-bonding film X. In this step, the hollow cylinder-shaped lifting member 43 provided in the stretching device rises in contact with the dicing tape 10 at the lower side of the die-bonding film X in the figure, and the semiconductor wafer split body 30B is bonded The dicing tape 10 of the dicing die-bonding film X extends in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer division 30B. This stretching is performed in the dicing tape 10 under the condition that a tensile stress in the range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa is generated. The temperature condition in this step is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and even more preferably -15°C. The extension speed (the speed at which the jacking member 43 rises) in this step is preferably 1 to 500 mm/sec. In addition, the extension amount in this step is preferably 50 to 200 mm. By this cooling and extending step, the adhesive bond layer 20 of the diced die bonding film X is cut into small pieces of the adhesive bond layer 21 to obtain the semiconductor wafer 31 with the adhesive bond layer. Specifically, in this step, in the adhesive adhesive layer 20 that is in close contact with the adhesive layer 12 of the extended dicing tape 10, in each region where the semiconductor chips 31 of the semiconductor wafer division body 30B are in close contact To suppress the deformation, on the other hand, the tensile stress generated in the dicing tape 10 acts in a state where such a deformation suppression effect does not occur at the portion facing the dividing groove 30a between the semiconductor wafers 31. As a result, the portion of the adhesive layer 20 that faces the dividing groove 30a between the semiconductor wafer 31 is cut.

In the semiconductor device manufacturing method of this embodiment, the semiconductor wafer 30C produced as follows may be bonded to the die-bonding film X instead of bonding the semiconductor wafer 30A or dividing the semiconductor wafer to the die-bonding film X The above structure of the body 30B.

As shown in FIGS. 13(a) and 13(b), first, a modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the side of the first surface Wa in the semiconductor wafer W, and wiring structures etc. (not shown) required for the semiconductor elements have been formed on the first surface Wa. In this step, after the wafer processing tape T3 having the adhesive surface T3a is attached to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held in the state of the wafer processing tape T3 , Irradiating the semiconductor wafer W from the side opposite to the wafer processing tape T3 along the planned dividing line to align the condensing point with the laser light inside the wafer, and cutting the semiconductor wafer W by cutting by multiphoton absorption The modified region 30b is formed inside. The modified region 30b is used to separate the semiconductor wafer W into a fragile region per semiconductor wafer unit. The method of forming the modified region 30b on the planned dividing line by laser light irradiation in the semiconductor wafer is described in detail in Japanese Patent Laid-Open No. 2002-192370, for example. In this method, the laser light irradiation conditions in this embodiment are appropriately adjusted within the range of the following conditions, for example. <Laser light irradiation conditions> (A) Laser light laser light source semiconductor laser excitation Nd: YAG laser wavelength 1064 nm Laser light spot cross-sectional area 3.14×10 ^-8 cm ² Oscillation form Q switching pulse repetition frequency 100 kHz pulse width 1 μs or less Output 1 mJ or less Laser quality TEM00 Polarization characteristics Linear polarized light (B) Condensing lens magnification 100 times or less NA 0.55 Transmittance for laser light wavelength 100% or less (C) Mounting table for mounting semiconductor substrates Moving speed below 280 mm/sec

Next, with the semiconductor wafer W held in the wafer processing tape T3, the semiconductor wafer W is thinned to a specific thickness by grinding processing from the second surface Wb, as shown in FIG. 13(c) To form a semiconductor wafer 30C that can be singulated into a plurality of semiconductor wafers 31 (wafer thinning step). In this embodiment, instead of the semiconductor wafer 30A, the semiconductor wafer 30C fabricated as described above may be bonded to the die-bonding film X, and then the above steps are performed with reference to FIGS. 6 to 10.

FIGS. 14(a) and 14(b) show the first stretching step (cooling stretching step) performed after bonding the semiconductor wafer 30C to the die-bonding film X. In this step, the hollow cylinder-shaped lifting member 43 of the stretching device rises in contact with the dicing tape 10 at the lower side of the dicing die-bonding film X in the figure, and the dicing of the semiconductor wafer 30C is bonded The dicing tape 10 of the die-bonding film X extends in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. The stretching is performed in the dicing tape 10, for example, under the condition that a tensile stress in the range of 1 to 100 MPa, preferably 5 to 40 MPa is generated. The temperature condition in this step is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and even more preferably -15°C. The extension speed (the speed at which the jacking member 43 rises) in this step is preferably 1 to 500 mm/sec. In addition, the extension amount in this step is preferably 50 to 200 mm. By this cooling and extending step, the adhesive bond layer 20 of the diced die bonding film X is cut into small pieces of the adhesive bond layer 21 to obtain the semiconductor wafer 31 with the adhesive bond layer. Specifically, in this step, a crack is formed in the fragile modified region 30b in the semiconductor wafer 30C, and singulation of the semiconductor wafer 31 occurs. In addition, in this step, in the adhesive adhesive layer 20 that is in close contact with the adhesive layer 12 of the extended dicing tape 10, deformation is suppressed in each area where the semiconductor wafers 31 of the semiconductor wafer 30C are in close contact with each other. On the other hand, the tensile stress generated in the dicing tape 10 acts in a state where such a deformation suppression effect does not occur at a portion opposed to the crack formation portion of the wafer. As a result, the portion of the adhesive layer 20 facing the crack formation portion between the semiconductor wafers 31 is cut.

As described above, the die-bonding film X can be used to obtain a semiconductor wafer with an adhesive layer. In addition, the die-bonding film X can also be used to obtain a semiconductor wafer with an adhesive layer attached when a plurality of semiconductor wafers are stacked for three-dimensional packaging. The adhesive layer 21 and the spacer may be interposed between the semiconductor chips 31 in such a three-dimensional package, or the spacer may not be interposed. [Example]

<Preparation of crystal cutting belt> In a reaction vessel equipped with a condenser tube, a nitrogen gas introduction tube, a thermometer, and a stirring device, 100 moles of dodecyl acrylate and 20 moles of 2-hydroxyethyl acrylate (2HEA) A mixture of ear parts, 0.2 parts by mass relative to 100 parts by mass of these monomer components as a polymerization initiator, benzoyl peroxide as a polymerization initiator, and toluene as a polymerization solvent was stirred at 60°C under a nitrogen atmosphere for 10 hours (Polymerization). By this, a polymer solution containing the acrylic polymer P ₁ was obtained. The weight average molecular weight (Mw) of the acrylic polymer P ₁ in this polymer solution was 450,000. Next, the mixture containing the polymer solution containing the acrylic polymer P ₁ , 2-methacryl oxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst at room temperature And stirred for 48 hours in an air environment (addition reaction). In this reaction solution, the molar ratio of the MOI formulation amount to the total amount of units derived from 2HEA in the acrylic polymer P ₁ or the total number of its hydroxyl groups was 0.2. In this reaction solution, the amount of dibutyltin dilaurate blended was 0.03 parts by mass with respect to 100 parts by mass of the acrylic polymer P ₁ . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacryloyl group in the side chain is obtained. Next, to this polymer solution, a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., Ltd.), 0.75 parts by mass relative to 100 parts by mass of acrylic polymer P ₂ , and 2 parts by mass of photopolymerization were added The starting agent (trade name "Irgacure 184", manufactured by BASF) was mixed, and toluene was added to the mixture so that the viscosity of the mixture at room temperature became 500 mPa·s for dilution to obtain an adhesive solution. Next, apply an adhesive solution to the silicone separator release surface of the PET separator (thickness 38 μm) with the silicone release release surface applied to form a coating film. Heat and dry at 130°C for 2 minutes to form an adhesive layer with a thickness of 10 μm on the PET separator. Next, using a laminating machine, a substrate made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB-0103", thickness 125 μm, Kurabo textile) was attached to the exposed surface of the adhesive layer at room temperature Co., Ltd.). The dicing tape is produced as above.

<Formation of adhesive layer> Acrylic resin A ₁ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1,000,000, glass transition temperature -1.5°C) 60 parts by mass, solid phenol resin (trade name "MEH-7851SS", solid at 23°C, manufactured by Minghe Chemical Co., Ltd.)) 15 parts by mass, and silica filler (trade name "SO-E2", average The particle size is 0.5 μm, manufactured by Admatechs Co., Ltd.) 25 parts by mass is added to methyl ethyl ketone and mixed, and the concentration is adjusted so that the viscosity at room temperature becomes 1000 mPa·s to obtain an adhesive bonding agent combination Thing. Next, on the release-treated surface of the PET separator (thickness 38 μm) having the surface subjected to the release treatment, an adhesive agent composition was applied using an applicator to form a coating film, and the coating film was applied at 130° C. After 2 minutes of heating and drying, a 10 μm thick adhesive layer as a viscous film was formed on the PET separator.

＜Fabrication of crystal-cut adhesive film＞ After peeling the above dicing tape from the PET separator, the adhesive layer exposed on the dicing tape and the above-mentioned adhesive adhesive layer with PET separator are bonded together at room temperature using a laminating machine to obtain a laminated sheet Wood body. Next, the laminated sheet body is subjected to a punching process in which a processing knife is inserted into the separator from the side of the EVA substrate of the dicing tape. Specifically, the laminated sheet body is flowed at a speed of 10 m/min in one direction, and the Thomson knife for circular stamping is rotatably arranged around an axis orthogonal to the direction on the one side The surface of the rotating roller with the processing blade attached to the surface of the roller is pressed against the EVA base material side of the laminated sheet body with a specific pushing force with a specific pushing force. The circumferential length of the rotating roller used in this stamping process is 378.9 mm. In addition, the Thomson knife wound on the surface of the rotating roller is made of SUS, and is arranged on the surface of the roller in such a way that a circle with a diameter of 370 mm can be stamped, the height of the knife is 0.3 mm, and the blade angle formed by the blade tip is 50°. By this stamping process, the dicing tape and the adhesive layer are processed into a disk shape at a time, and the dicing adhesive film is formed on the separator. After that, the material accumulation part around the formed die-cut adhesive film is removed from the separator. The die-cut die-bonding film of Example 1 including the laminated structure having the die-cut tape and the adhesive layer as the die-bonding film was produced in the above manner. The composition of the adhesive adhesive layer in Example 1 and the composition of the adhesive adhesive layer in other examples and comparative examples are disclosed in Table 1 (in Table 1, the unit of each value related to the composition of the adhesive adhesive layer It is the relative "mass part" in this layer).

[Example 2] The blending amount of the acrylic resin A ₁ was set to 48 parts by mass instead of 60 parts by mass, and the blending amount of the solid phenol resin (trade name "MEH-78511SS", manufactured by Meiwa Chemical Industry Co., Ltd.) was set to 12 parts by mass instead of 15 parts by mass, and the amount of silicon dioxide filler (trade name "SO-E2", manufactured by Admatechs Co., Ltd.) is set to 40 parts by mass instead of 25 parts by mass. In the same manner as the adhesive layer of 1, the adhesive layer (thickness of 10 μm) in Example 2 was prepared on the PET separator. In addition, the adhesive adhesive layer in Example 2 was used instead of the adhesive adhesive layer in Example 1, except that the die-cut crystal of Example 2 was produced in the same manner as the die-cut adhesive film of Example 1. Mucous membrane.

[Example 3] 60 parts by mass of acrylic resin A ₂ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1,000,000, glass transition temperature -6.5°C) Instead of 60 parts by mass of acrylic resin A ₁ , in the same manner as the adhesive adhesive layer of Example 1, an adhesive adhesive layer (thickness of 10 μm) in Example 3 was produced on the PET separator. In addition, the adhesive adhesive layer in Example 3 was used instead of the adhesive adhesive layer in Example 1, except that the die-cut crystal of Example 3 was produced in the same manner as the die-cut adhesive film of Example 1. Mucous membrane.

[Example 4] 48 parts by mass of acrylic resin A ₂ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1,000,000, glass transition temperature -6.5°C) Instead of 60 parts by mass of acrylic resin A ₁ , the amount of solid phenol resin (trade name "MEH-78511SS", manufactured by Meiwa Chemical Co., Ltd.) was set to 12 parts by mass instead of 15 parts by mass, and the silica filler (The trade name "SO-E2", manufactured by Admatechs Co., Ltd.) is 40 parts by mass instead of 25 parts by mass, except that it is on the PET separator in the same manner as the adhesive layer of Example 1. An adhesive layer (thickness 10 μm) in Example 4 was produced. In addition, the adhesive adhesive layer in Example 4 was used instead of the adhesive adhesive layer in Example 1, except that the die-cut crystal of Example 4 was produced in the same manner as the die-cut adhesive film of Example 1. Mucous membrane.

[Comparative Example 1] 42.4 parts by mass of acrylic resin A ₃ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1,000,000, glass transition temperature 4°C) was used instead 60 parts by mass of acrylic resin A ₁ , the amount of solid phenol resin (trade name "MEH-78511SS", manufactured by Meiwa Chemical Co., Ltd.) is set to 10.6 parts by mass instead of 15 parts by mass, and the silica filler ( The product name "SO-E2", manufactured by Admatechs Co., Ltd.) was prepared on a PET separator in the same manner as the adhesive layer of Example 1 except that the amount of preparation was set to 47 parts by mass instead of 25 parts by mass. The adhesive layer in Comparative Example 1 (thickness 10 μm). In addition, the adhesive adhesive layer in Comparative Example 1 was used instead of the adhesive adhesive layer in Example 1, except that the die cut of Comparative Example 1 was produced in the same manner as the die cut adhesive film of Example 1. Mucous membrane.

[Comparative Example 2] 80 parts by mass of acrylic resin A ₂ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight 1,000,000, glass transition temperature -6.5°C) Instead of 60 parts by mass of acrylic resin A ₁ , the amount of solid phenol resin (trade name "MEH-78511SS", manufactured by Meiwa Chemical Co., Ltd.) was set to 20 parts by mass instead of 15 parts by mass, and silica was not used Except for the filler, in the same manner as the adhesive adhesive layer of Example 1, an adhesive adhesive layer (thickness of 10 μm) in Comparative Example 2 was produced on the PET separator. In addition, the adhesive adhesive layer in Comparative Example 2 was used instead of the adhesive adhesive layer in Example 1, except that the die cut of Comparative Example 2 was produced in the same manner as the die cut adhesive film of Example 1. Mucous membrane.

[The first tensile storage modulus (25℃)] For each of the adhesive layers in Examples 1 to 4 and Comparative Examples 1 and 2, based on dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring device (trade name "RSAIII", manufactured by TA Instruments), the investigation was conducted on 25 The tensile storage modulus at ℃ (the first tensile storage modulus). The sample piece for dynamic viscoelasticity measurement was prepared by forming a laminated body obtained by laminating each adhesive layer with a thickness of 160 μm and cutting it from the laminated body with a width of 10 mm × a length of 30 mm. In this measurement, the initial chuck distance of the chuck for holding the sample piece is set to 22.5 mm, the measurement mode is set to the stretch mode, the measurement temperature range is set to -30°C to 100°C, and the frequency Set to 1 Hz, set the dynamic strain to 0.005%, and set the heating rate to 10°C/min. Table 1 shows the calculated tensile storage modulus (MPa) at 25°C.

[Second tensile storage modulus (-15℃)] The adhesive adhesive layers in Examples 1 to 4 and Comparative Examples 1 and 2 were investigated based on dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring device (trade name "Rheogel-E4000", manufactured by UBM). Tensile storage modulus at -15°C (second tensile storage modulus). The sample piece for dynamic viscoelasticity measurement was prepared by forming a laminate obtained by laminating each adhesive layer with a thickness of 80 μm and cutting it from the laminate with a width of 5 mm × a length of 25 mm. In this measurement, the initial chuck distance of the chuck for holding the sample piece is set to 10 mm, the measurement mode is set to the stretch mode, the measurement temperature range is set to -30°C to 100°C, and the frequency Set to 900 Hz, set the dynamic strain to 0.005%, and set the heating rate to 5°C/min. Table 2 shows the calculated second tensile storage modulus (MPa) at -15°C.

<Shear adhesion> For each of the crystal-cut adhesive films of Examples 1 to 4 and Comparative Examples 1 and 2, the shear adhesion at -15°C to the SUS plate was measured. The sample piece for this measurement was produced as follows. First, in the die-cut crystal bonding film, the self-cut crystal tape strips the adhesive layer. Next, a liner tape (trade name "BT-315", manufactured by Nitto Denko Co., Ltd.) was bonded to the surface of the adhesive layer that was bonded to the side of the dicing tape. Then, an adhesive layer was adhered from the obtained substrate, and a sample piece having a size of 10 mm in width×100 mm in length was cut out.

The prepared sample piece was attached to the SUS plate at room temperature. The SUS plate was subjected to surface cleaning treatment by wiping with a non-woven cloth infiltrated with toluene and wiping with a non-woven cloth infiltrated with methanol. In the bonding industry, the end of the SUS plate in the area of 10 mm × 10 mm at the end of the sample piece is crimped with a load of 2 kg rollers back and forth once. Then, after leaving the sample piece and the SUS plate at room temperature for 30 minutes, the shear adhesion was measured using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). In this measurement, the measurement temperature is -15°C, the stretching speed is 1000 mm/min, and the maximum stress value obtained is set as the shear adhesive force (N/cm ² ).

＜Frame retention at 23℃＞ For each of the die-cut adhesive films of Examples 1 to 4 and Comparative Examples 1 and 2, the adhesion or retention to the ring frame was investigated as follows. First, using a bonding device (MA-3000II, manufactured by Nitto Seiki Co., Ltd.), a 12-inch diameter SUS ring frame (manufactured by DISCO Co., Ltd.) was bonded to the adhesive layer of the die-cut adhesive film. side. The bonding is performed under the conditions of a bonding speed of 10 mm/sec and a temperature of 60°C. Thereafter, it was stored in the case in a horizontal state, and left at room temperature for 1 week. Also, check whether the ring frame is peeled off from the adhesive layer source. The case where no peeling of the ring-shaped frame self-cut crystal adhesive film or its adhesive layer was evaluated as "good", and the case where the peeling of the ring-shaped frame was evaluated as "bad". The evaluation results are shown in Table 1.

[Cut-off in cooling extension step (-15℃)] Using the dicing die-bonding films of Examples 1 to 4 and Comparative Examples 1 and 4, the following bonding step, the first stretching step for cutting (cooling stretching step), and the first 2 Extension step (normal temperature extension step).

In the bonding step, the semiconductor wafer division of the wafer adhesive tape (trade name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) is bonded to the adhesive adhesive layer of the die-cut adhesive film, which After that, the wafer processing tape is peeled from the semiconductor wafer division. For bonding, a bonding machine was used, the bonding speed was set to 10 mm/sec, the temperature condition was set to 60°C, and the pressure condition was set to 0.15 MPa. In addition, a semiconductor wafer division system is prepared as follows. First, for bare wafers (diameter 12 inches, thickness 780 μm) in a state of being held together with the ring frame by wafer processing tape (trade name "V12S-R2-P", manufactured by Nitto Denko Corporation) , Manufactured by Tokyo Chemical Industry Co., Ltd.), using a crystal cutting device (trade name "DFD6260", manufactured by DISCO Co., Ltd.) from one side, using its rotating blade to form a dividing groove for monolithization (width 25 μm, Depth 50 μm, showing a group of 6 mm × 12 mm lattice-like). Next, after attaching a wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Co., Ltd.) to the dividing groove forming surface, apply the wafer processing tape (trade name "V12S-R2-P" ) Peel off from the wafer. Thereafter, using a back-grinding device (trade name "DGP8760", manufactured by DISCO Co., Ltd.), the wafer was thinned to a thickness of 20 by grinding from the side of the other surface of the wafer (the surface where the dividing groove was not formed) [mu]m, and then, the dry polishing using the same device was subjected to mirror polishing on the ground surface. The semiconductor wafer split body is formed as described above (in a state of being held by the wafer processing tape). The semiconductor wafer divided body includes a plurality of semiconductor chips (6 mm×12 mm).

The cooling and stretching step is performed using a wafer separation device (trade name "Die Separator DDS3200", manufactured by DISCO Co., Ltd.) and cooling the stretching unit using the same. Specifically, first, the frame bonding area (around the work bonding area) of the adhesive bonding agent layer in the diced die-bonding film with the semiconductor wafer division is attached at a diameter of 12 at room temperature Inch ring frame made of SUS (made by DISCO Corporation). Next, the dicing die-bonding film is installed in the device, and the dicing tape of the dicing die-bonding film with the semiconductor wafer division is extended by the cooling and stretching unit of the same device. In this cooling and stretching step, the temperature is -15°C, the stretching speed is 300 mm/sec, and the stretching amount is 15 mm.

The normal temperature stretching step is performed using a wafer separation device (trade name "Die Separator DDS3200", manufactured by DISCO Co., Ltd.) and using its normal temperature stretching unit. Specifically, the normal-temperature stretching unit of the same device is used to extend the dicing tape of the dicing die-bonding film with the semiconductor wafer division after the cooling and stretching step. In the normal temperature stretching step, the temperature is 23°C, the stretching speed is 1 mm/sec, and the stretching amount is 10 mm. Thereafter, the die-cut crystal film stretched at room temperature is subjected to heat shrinkage treatment. The treatment temperature is 200°C and the treatment time is 20 seconds.

At the stage of the above-mentioned process performed by using each of the die-cut adhesive films of Examples 1 to 4 and Comparative Examples 1 and 2, the total number of semiconductor wafers with a cut adhesive bond layer was investigated relative to the semiconductor crystal The ratio of the total number of semiconductor wafers contained in the circular segment. In addition, for the cutting property of the adhesive layer, the case where the ratio is 80% or more is evaluated as "good", and the case where the ratio is less than 80% is evaluated as "bad". The evaluation results are shown in Table 1.

[Evaluation] Good results were obtained with respect to the frame retention of the die-cut adhesive films of Examples 1 to 4 and the cutability in the cooling and stretching step (-15°C). In contrast, in the die-cut adhesive film of Comparative Example 1, the tensile storage modulus of the adhesive layer is too high, so the ring frame cannot be maintained in the adhesive layer. Therefore, the cooling and extending step using the die-bonding film of Comparative Example 1 cannot be performed. In addition, in the die-cut adhesive film of Comparative Example 2, since the tensile storage modulus of the adhesive layer is too low, the adhesive layer cannot be sufficiently cut during the cooling and stretching step.

[Table 1]

10: Cutting crystal belt 11: substrate 11': substrate 11e: outer peripheral end 12: Adhesive layer 12': Adhesive layer 12a: Adhesive surface 12e: outer peripheral end 20: Adhesive layer 20': Adhesive layer 20a: noodles 20e: outer peripheral end 21: Adhesive layer 30A: Semiconductor wafer 30a: Split groove 30B: Semiconductor wafer segment 30b: modified area 30C: Semiconductor wafer 31: Semiconductor chip 41: ring frame 42: Retainer 43: jacking member 44: Pin 45: Adsorption fixture 51: Attached body 52: Bonding wire 53: Sealing resin 60: crystal cutting belt 61: substrate 62: Adhesive layer 62e: outer peripheral end 70: Crystal film 70e: outer peripheral end 81: Semiconductor wafer 82: ring frame 83: Separator C1: Adhesive composition layer C2: Adhesive composition layer D: In-plane direction F: direction R: Irradiated area S: Separator T1: tape for wafer processing T1a: Adhesive surface T2: tape for wafer processing T2a: Adhesive surface T3: tape for wafer processing T3a: Adhesive surface W: Semiconductor wafer Wa: Face 1 Wb: Face 2 X: crystal cutting film Y: Crystal cut film

FIG. 1 is a schematic cross-sectional view of a die-cut adhesive film according to an embodiment of the present invention. FIG. 2 shows an example of the case of the dicing die-bonding film shown in FIG. 1 with a separator. 3(a) to (d) show a part of the steps in an example of the manufacturing method of the die-cut adhesive film shown in FIG. 4(a) and (b) show steps following the step shown in FIG. 3. 5(a) to (d) show a part of the steps in the method of manufacturing a semiconductor device using the die-bonding film shown in FIG. 6(a) and (b) show steps following the step shown in FIG. 7(a) to (c) show steps following the step shown in FIG. 6. 8(a) and (b) show steps following the step shown in FIG. 7. FIG. 9 shows steps following the step shown in FIG. 8. Fig. 10 (a) to (c) show steps following the step shown in Fig. 9. FIG. 11 shows a part of the steps in a variation of the manufacturing method of the semiconductor device using the die-bonding film shown in FIG. 1. 12(a) and (b) show a part of the steps in a modification of the method for manufacturing a semiconductor device using the die-bonding film shown in FIG. 13(a) to (c) show a part of the steps in a modified example of the semiconductor device manufacturing method using the die-bonding film shown in FIG. 14(a) and (b) show a part of the steps in a variation of the method for manufacturing a semiconductor device using the die-bonding film shown in FIG. 15 is a schematic cross-sectional view of the previous die-cut crystal bonding film. FIG. 16 shows a usage state of the die-bonding film shown in FIG. 15. Fig. 17 shows one supply form of the die-cut die-bonding film shown in Fig. 15.

10: Cutting crystal belt

11: substrate

11e: outer peripheral end

12: Adhesive layer

12a: Adhesive surface

12e: outer peripheral end

20: Adhesive layer

20a: noodles

20e: outer peripheral end

D: In-plane direction

R: Irradiated area

X: crystal cutting film

Claims (10)

A crystal-cut crystal bonding film comprising: a crystal-cutting tape having a layered structure including a base material and an adhesive layer; and An adhesive layer, which is peelably adhered to the adhesive layer in the dicing tape; and Regarding the above-mentioned adhesive adhesive layer, for an adhesive adhesive layer sample piece with a width of 10 mm and a thickness of 160 μm, the distance between the initial chucks is 22.5 mm, the frequency is 1 Hz, the dynamic strain is 0.005%, and the heating rate is 10 °C/min. The tensile storage modulus measured at 25°C under the conditions is 5 to 120 MPa, and Regarding the above-mentioned adhesive adhesive layer, for an adhesive adhesive layer sample piece with a width of 5 mm and a thickness of 80 μm, the distance between the initial chuck is 10 mm, the frequency is 900 Hz, the dynamic strain is 0.005%, and the heating rate is 5°C/min. The tensile storage modulus measured at -15°C under the conditions is 3000-6000 MPa. The diced die-bonding film of claim 1, wherein the outer peripheral end of the adhesive layer is within a distance of 1000 μm from the outer peripheral end of the adhesive layer in the in-plane direction of the film. The diced die-bonding film according to claim 1 has a shear adhesion at -15°C of SUS of the SUS plane in the above-mentioned adhesive adhesive layer of 66 N/cm ² or more. The diced die-bonding film according to claim 2 has a shear adhesive force at -15°C of SUS of SUS plane in the above-mentioned adhesive adhesive layer of 66 N/cm ² or more. The die-cut adhesive film according to claim 1, wherein the adhesive layer is a radiation hardening adhesive layer, and The peeling force between the above-mentioned adhesive layer and the above-mentioned adhesive adhesive layer before radiation curing in the T-type peeling test under the conditions of 23° C. and a peeling speed of 300 mm/min is 0.5 N/20 mm or more. The die-cut die-bonding film according to claim 1, wherein the above adhesive layer has a thickness of 7-30 μm. The die-cut adhesive film according to any one of claims 1 to 6, wherein the adhesive adhesive layer includes a polymer component having a weight average molecular weight of 800,000 to 2,000,000 and a glass transition temperature of -10 to 3°C. The crystalline die-bonding film according to claim 7, wherein the polymer component contains a structural unit derived from acrylonitrile. The die-cut die-bonding film according to any one of claims 1 to 6, wherein the adhesive bonding agent layer contains a silica filler at a ratio of 10 to 40% by mass. The die-cut die-bonding film according to claim 7, wherein the above-mentioned adhesive layer contains a silica filler at a ratio of 10 to 40% by mass.

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