KR20180116756A - Dicing die bond film - Google Patents

Abstract

Provided is a dicing die bond film which is capable of favorably picking up adhesive layer-attached semiconductor chips after cutting, while favorably cutting adhesive layers on top of dicing tapes, in an expand process in which a dicing die bond films is used to obtain the adhesive layer-attached semiconductor chip. To this end, the dicing die bond film comprises: the dicing tape having a laminated structure including a substrate and the adhesive layer; and the adhesive layer in close contact with the adhesive layer on the dicing tape while being removalble. The modulus of elasticity of a surface of the adhesive layer upon pressing at 500 nm via a nanoindentation method is 0.1-20 MPa under condition involving a frequency of 100 Hz and a temperature of 23°C.

Description

DICING DIE BOND FILM [0002]

The present invention relates to a dicing die-bonding film. More particularly, the present invention relates to a dicing die-bonding film that can be used in the manufacturing process of a semiconductor device.

In the process of manufacturing a semiconductor device, a dicing die-bonding film may be used in the process of obtaining a semiconductor chip having an adhesive film of a size equivalent to a die bonding chip, that is, a semiconductor chip having an adhesive layer for die bonding. The dicing die-bonding film has a size corresponding to that of a semiconductor wafer to be processed and has a dicing tape composed of, for example, a base material and a pressure-sensitive adhesive layer, and a die-bonding film (adhesive layer) adhered to the pressure- .

As a method of obtaining a semiconductor chip with an adhesive layer using a dicing die-bonding film, there is known a method of exposing a dicing tape in a dicing die-bonding film to a step of cutting the die-bonding film. In this method, first, a semiconductor wafer is bonded onto a die-bonding film of a dicing die-bonding film. This semiconductor wafer is, for example, fabricated so that it can be separated into a plurality of semiconductor chips together with a die bond film. Next, in order to cut the die-bonding film on the dicing tape, the dicing tape of the dicing die-bonding film is stretched in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer by using an expanding apparatus. In this expanding step, a cutting edge is generated in the semiconductor wafer on the die-bonding film at a position corresponding to the cut-off point in the die-bonding film, and the semiconductor wafer is diced onto the dicing die- It is reorganized. Then, in order to extend the separation distance to a plurality of die-bonding-film-attached semiconductor chips on the dicing tape, the expanding process is performed again. Subsequently, after the cleaning process, for example, each semiconductor chip is picked up on the dicing tape by the pin member of the pick-up mechanism from the lower side of the dicing tape together with the die bonding film of the size corresponding to the chip closely contacting the semiconductor chip . In this way, a die-bonding film, that is, a semiconductor chip with an adhesive layer is obtained. The semiconductor chip with the adhesive layer is fixed to an adherend such as a mounting substrate by die bonding via the adhesive layer. The techniques relating to the dicing die-bonding film used as described above are described, for example, in Patent Documents 1 to 3 below.

Japanese Patent Laid-Open No. 2007-2173 Japanese Patent Application Laid-Open No. 2010-177401 Japanese Patent Application Laid-Open No. 2016-115804

Fig. 14 is a schematic cross-sectional view of a conventional dicing die-bonding film Y. Fig. The dicing die-bonding film Y is composed of a dicing tape 60 and a die-bonding film 70. The dicing tape 60 has a laminated structure of a base material 61 and a pressure-sensitive adhesive layer 62 exhibiting adhesive force. The die-bonding film 70 is in close contact with the pressure-sensitive adhesive layer 62 due to the adhesive force of the pressure-sensitive adhesive layer 62. Such a dicing die-bonding film Y has a disk shape corresponding to a semiconductor wafer, which is an object to be processed or a workpiece in the process of manufacturing a semiconductor device, and can be used in the above-described expanding process. The semiconductor wafer 81 is bonded to the die bond film 70 and the ring frame 82 is attached to the pressure sensitive adhesive layer 62 as shown in Fig. The process is carried out. The semiconductor wafer 81 is processed, for example, into a plurality of semiconductor chips so as to be separable. The ring frame 82 is a frame member which is mechanically abutted against the dicing die-bonding film Y when the transport mechanism such as a transport arm provided in the expanding apparatus is brought into contact with the dicing die bond film Y. The conventional dicing die-bonding film Y is designed such that the ring frame 82 can be fixed to the film by the adhesive force of the adhesive layer 62 of the dicing tape 60. That is, the conventional dicing die-bonding film Y has a design in which the area for attaching the ring frame is secured around the die-bonding film 70 in the pressure-sensitive adhesive layer 62 of the dicing tape 60. In such a design, the distance between the outer peripheral end portion 62e of the pressure-sensitive adhesive layer 62 and the outer peripheral end portion 70e of the die-bonding film 70 in the in-plane direction of the film is about 10 to 30 mm.

DISCLOSURE OF THE INVENTION The present invention has been devised on the basis of the above circumstances and its object is to provide an adhesive layer on a dicing tape in an expanding process in which a dicing die- And to provide a dicing die-bonding film capable of realizing a good pick-up with respect to a semiconductor chip with an adhesive layer after cutting.

Means for Solving the Problems As a result of intensive studies to achieve the above object, the present inventors have found that when a dicing die-bonding film having a modulus of elasticity at the time of 500 nm indentation by the nanoindentation method on the surface of the pressure- It has been found out that the adhesive layer on the dicing tape can be satisfactorily made and a good pickup can be realized with respect to the semiconductor chip with adhesive layer after cutting. The present invention has been completed on the basis of these findings.

That is, the present invention provides a dicing tape comprising a dicing tape having a laminated structure including a substrate and a pressure-sensitive adhesive layer, and an adhesive layer which is in close contact with the pressure-sensitive adhesive layer in the dicing tape in a peelable manner, And having a modulus of elasticity of 0.1 to 20 MPa at a temperature of 23 DEG C and a frequency of 100 Hz at a pressure of 500 nm by the nanoindentation method.

The dicing die-bonding film of the present invention comprises a dicing tape and an adhesive layer. The dicing tape has a laminated structure including a substrate and a pressure-sensitive adhesive layer. The adhesive layer is adhered to the pressure-sensitive adhesive layer of the dicing tape in a peelable manner. The pressure-sensitive adhesive layer of the dicing tape has a modulus of elasticity of 0.1 to 20 MPa at the temperature of 23 DEG C and a frequency of 100 Hz on the surface of the pressure-sensitive adhesive layer at a pressure of 500 nm by the nanoindentation method. The dicing die-bonding film having such a structure can be used to obtain a semiconductor chip with an adhesive layer in the process of manufacturing a semiconductor device. Further, the dicing die-bonding film of the present invention can be manufactured by, for example, a process of applying a composition for forming a pressure-sensitive adhesive layer on an adhesive layer formed on a separator and solidifying the applied composition to form a pressure-sensitive adhesive layer, (A lamination application method) in which a composition for forming a resin layer is applied and solidified to form an adhesive layer.

In the manufacturing process of the semiconductor device, as described above, in order to obtain the semiconductor chip with the adhesive layer, the expanding process using the dicing die-bonding film, that is, the expanding process for the cutting process, may be performed. In this expanding step, it is necessary that a cutting force is appropriately applied to the adhesive layer on the dicing tape in the dicing die-bonding film. As described above, the pressure-sensitive adhesive layer of the dicing tape in the dicing die-bonding film of the present invention is a pressure-sensitive adhesive layer having a thickness of 500 nm by the nanoindentation method at a temperature of 23 캜 and a frequency of 100 Hz on the surface of the pressure- And the elastic modulus at the time is 0.1 to 20 MPa. The elastic modulus by the nanoindentation method is obtained by continuously measuring the load applied to the indenter and the indentation depth at the time of loading and unloading when the indenter is press-fitted into the surface of the pressure-sensitive adhesive layer, Means the elastic modulus obtained from the curve. As described above, the elastic modulus by the nanoindentation method is an index showing the physical properties of the surface of the pressure-sensitive adhesive layer, and is different from the elastic modulus such as the tensile elastic modulus obtained by the conventional viscoelasticity measurement, which is an index showing the physical properties of the whole pressure- will be. Since the pressure-sensitive adhesive layer in the dicing die-bonding film of the present invention has an elastic modulus of 0.1 MPa or more by the above-mentioned nanoindentation method, the stress generated at the time of expansion tends to be easily transmitted to the adhesive layer, Furthermore, adhesion between the pressure-sensitive adhesive layer and the adhesive layer can be made appropriate, and peeling between the pressure-sensitive adhesive layer and the adhesive layer in the expanding process can be suppressed. The elastic modulus by the nanoindentation method of 20 MPa or less makes cracking of the pressure-sensitive adhesive layer in the expanding process difficult, and in the pick-up process, the semiconductor chip with the adhesive layer after being removed from the pressure- So that it is possible to realize a good pickup. When the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer to be described later, it is preferable that the elastic modulus of the pressure-sensitive adhesive layer 12 after radiation curing by the above-described nanoindentation method is within the above range.

The dicing die-bonding film of the present invention is characterized in that the dicing tape or its adhesive layer and the adhesive layer on the dicing tape or adhesive layer thereon are substantially It is possible to design with the same dimensions. For example, the outer peripheral end of the adhesive layer may be located within a distance of 1000 占 퐉 from the outer peripheral end of each of the substrate of the dicing tape and the pressure-sensitive adhesive layer in the in-plane direction of the dicing die-bonding film. The dicing die-bonding film of the present invention can be obtained by forming a single dicing tape having a laminated structure of a substrate and a pressure-sensitive adhesive layer, for example, after the lamination of the adhesive layer and the pressure-sensitive adhesive layer by the above- And a process for forming one adhesive layer can be carried out collectively by processing such as one punching process.

In the manufacturing process of the above-described conventional dicing die-bonding film Y, a processing step (first processing step) for forming the dicing tape 60 having a predetermined size and shape, a die having a predetermined size and shape A processing step (second processing step) for forming the bond film 70 is required as a separate step. In the first processing step, for example, for a laminated sheet body having a laminated structure of a separator, a base layer to be formed on the base material 61, and a pressure-sensitive adhesive layer to be formed on the pressure-sensitive adhesive layer 62, , Processing is carried out so as to protrude the cutting edge from the base layer side to the separator. Thereby, a dicing tape 60 having a laminated structure of the pressure-sensitive adhesive layer 62 on the separator and the base material 61 is formed on the separator. In the second processing step, for example, the laminate sheet body having the laminate structure of the separator and the adhesive layer to be formed on the die-bonding film 70 is subjected to a process for protruding the cutting edge from the side of the adhesive layer to the separator . Thus, the die-bonding film 70 is formed on the separator. The dicing tape 60 and the die bond film 70 formed in such a separate process are then bonded while being aligned. 16 shows a conventional dicing die-bonding film Y carrying a separator 83 covering the surface of the die-bonding film 70 and the surface of the pressure-sensitive adhesive layer 62. Fig.

On the other hand, the dicing die-bonding film of the present invention in the case where the dicing tape or its adhesive layer and the adhesive layer thereon have substantially the same design dimensions in the in-plane direction of the film can be obtained, for example, A process for forming one dicing tape having a laminated structure of a base material and a pressure-sensitive adhesive layer and a process for forming one adhesive layer are performed by a single punching process And the like. Such a dicing die-bonding film of the present invention is advantageous not only in satisfying the adhesive layer in the expanding process but also in realizing a good pickup of the semiconductor chip with adhesive layer in the pickup process, And is also suitable for efficient production in terms of suppressing manufacturing costs and the like.

In the dicing die-bonding film of the present invention, the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer after radiation curing in the T-type peel test under conditions of a temperature of 23 캜 and a peeling rate of 300 mm / And the adhesive layer is preferably 0.06 to 0.25 N / 20 mm. If the peeling force in the T-type peeling test after the radiation curing is 0.06 N / 20 mm or more, adhesion between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer thereon is secured, and adhesion of the adhesive layer It is possible to further suppress the occurrence of partial peeling, i.e., entanglement, from the pressure-sensitive adhesive layer of the semiconductor chip. When the peeling force in the T-type peeling test after the radiation curing is 0.25 N / 20 mm or less, a better pickup in the pickup process can be realized.

Further, in the dicing die-bonding film of the present invention, the peel force between the pressure-sensitive adhesive layer and the adhesive layer before the radiation curing in the T-type peeling test under the conditions of a temperature of 23 캜 and a peeling rate of 300 mm / / 20 mm or more. When the peeling force in the T-type peeling test before the radiation curing is 2 N / 20 mm or more, when the expanding process is performed in a state in which the radiation curing is not performed, the adhesion between the adhesive layer of the dicing tape and the adhesive layer The adhesiveness can be ensured and the adhesive layer can be made more satisfactory while further suppressing the occurrence of partial peeling, i.e., entanglement, from the adhesive layer of the semiconductor chip with adhesive layer in the expanding step.

In the dicing die-bonding film of the present invention, the difference between the surface roughness Ra of the surface of the pressure-sensitive adhesive layer and the surface roughness Ra of the surface of the adhesive layer on the contact surface between the pressure-sensitive adhesive layer and the adhesive layer is preferably 100 nm or less . When the difference in the surface roughness Ra is 100 nm or less, the adhesion between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer on the dicing tape can be further improved. In the expanding process, It is possible to further suppress the occurrence of peeling, i.e., entanglement.

In the dicing die-bonding film of the present invention, the pressure-sensitive adhesive layer includes a constituent unit derived from a (meth) acrylate having an alkyl group having 10 or more carbon atoms and a constituent unit derived from 2-hydroxyethyl (meth) Based on the total weight of the first acrylic polymer. Since the pressure-sensitive adhesive layer contains the first acrylic polymer, peeling of the adhesive layer-attached semiconductor chip in the pressure-sensitive adhesive layer of the dicing tape during the pick-up process becomes easier, and a better pick-up can be realized.

Further, in the dicing die-bonding film of the present invention, it is preferable that the content of the structural unit derived from a (meth) acrylate having an alkyl group having at least 10 carbon atoms in the first acrylic polymer is 2-hydroxyethyl (meth) The molar ratio to the constituent units is preferably 1 to 40. As the molar ratio decreases, the interaction between the pressure-sensitive adhesive layer on the dicing tape and the adhesive layer on the pressure-sensitive adhesive layer tends to become strong. When the molar ratio is 1 or more, the interaction can be suppressed relatively low, The peeling of the adhesive layer-attached semiconductor chip from the pressure-sensitive adhesive layer of the dicing tape in the pick-up process becomes easier, and a better pick-up can be realized. When the molar ratio is 40 or less, the above interaction can be maintained to a certain extent, adhesion between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer on the pressure-sensitive adhesive layer is secured, It is possible to further suppress the occurrence of partial peeling, i.e., entanglement, in the pressure-sensitive adhesive layer of the chip.

In the dicing die-bonding film of the present invention, it is preferable that the first acrylic polymer contains a constitutional unit derived from an isocyanate compound containing an unsaturated functional group, and the constitutional unit derived from the isocyanate compound containing an unsaturated functional group in the first acrylic polymer (Meth) acrylate to the structural unit derived from 2-hydroxyethyl (meth) acrylate is preferably 0.1 to 2. If the molar ratio is 0.1 or more, the elastic modulus of the pressure-sensitive adhesive layer after the radiation curing tends to be improved by the nanoindentation method, and if the first acrylic polymer has a structural unit derived from an isocyanate compound containing an unsaturated functional group, The adhesive layer can be made better in the panda process. When the molar ratio is 2 or less, the elastic modulus of the pressure-sensitive adhesive layer after radiation curing by the nanoindentation method tends to be lowered, and cracking of the pressure-sensitive adhesive layer in the expanding process can be made more difficult.

In the dicing die-bonding film of the present invention, it is preferable that the adhesive layer has an adhesive force to SUS of 0.1 to 20 N / 10 mm at a temperature of 23 占 폚, a peeling speed of 300 mm / min, and an angle of 180 占desirable. When the adhesive strength is 0.1 N / 10 mm or more, adhesion between the adhesive layer and the ring frame is improved when the ring frame is adhered to the adhesive layer in the expanding process. In the expanding step, The die-bonding film can be well maintained. When the adhesive force is 20 N / 10 mm or less, when the ring frame is adhered to the adhesive layer in the expanding process, the dicing die-bonding film of the present invention from the ring frame is easily peeled off.

In the dicing die-bonding film of the present invention, it is preferable that the adhesive layer has a storage elastic modulus at 23 캜 of 100 to 4000 MPa. When the storage elastic modulus is 100 MPa or more, when the ring frame is adhered to the adhesive layer in the expanding process, the dicing die-bonding film of the present invention from the ring frame is easily peeled off. If the storage elastic modulus is 4000 MPa or less, adhesion of the adhesive layer to the ring frame is improved when the ring frame is adhered to the adhesive layer in the expanding process. In the expanding step, The film can be maintained well.

The dicing die-bonding film of the present invention has a good adhesive layer on the dicing tape in an expanding process in which a dicing die-bonding film is used to obtain a semiconductor chip with an adhesive layer, It is possible to realize a good pickup for the attached semiconductor chip.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing one embodiment of a dicing die-bonding film of the present invention. Fig.
Fig. 2 shows an example in which the dicing die-bonding film shown in Fig. 1 has a separator.
Fig. 3 shows an example of a manufacturing method of the dicing die-bonding film shown in Fig.
Fig. 4 shows a part of steps in the method of manufacturing a semiconductor device using the dicing die-bonding film shown in Fig.
Fig. 5 shows a subsequent process of the process shown in Fig.
Fig. 6 shows a subsequent process of the process shown in Fig.
Fig. 7 shows a subsequent process of the process shown in Fig.
Fig. 8 shows a subsequent process of the process shown in Fig.
Fig. 9 shows a subsequent process of the process shown in Fig.
Fig. 10 shows a part of steps in a modification of the method of manufacturing a semiconductor device using the dicing die-bonding film shown in Fig.
Fig. 11 shows a part of steps in a modification of the method of manufacturing a semiconductor device using the dicing die-bonding film shown in Fig.
Fig. 12 shows a part of steps in a modified example of the manufacturing method of the semiconductor device using the dicing die-bonding film shown in Fig.
Fig. 13 shows a part of steps in a modification of the method of manufacturing a semiconductor device using the dicing die-bonding film shown in Fig.
14 is a schematic cross-sectional view of a conventional dicing die-bonding film.
Fig. 15 shows a use form of the dicing die-bonding film shown in Fig.
Fig. 16 shows one form of supply of the dicing die-bonding film shown in Fig.

[Dicing die-bonding film]

The dicing die-bonding film of the present invention comprises a dicing tape having a laminated structure including a substrate and a pressure-sensitive adhesive layer, and an adhesive layer which is in close contact with the pressure-sensitive adhesive layer in the dicing tape in a peelable manner. One embodiment of the dicing die-bonding film of the present invention will be described below. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing one embodiment of a dicing die-bonding film of the present invention. Fig.

1, the dicing die-bonding film X comprises a dicing tape 10 and an adhesive layer 20 laminated on the pressure-sensitive adhesive layer 12 of the dicing tape 10, And can be used in an expanding process in the process of obtaining a semiconductor chip with an adhesive layer in the manufacture of an apparatus. The dicing die-bonding film X has a disk shape corresponding to the semiconductor wafer to be processed in the manufacturing process of the semiconductor device. The diameter of the dicing die-bonding film X is, for example, within a range of 345 to 380 mm (for a 12-inch wafer), within a range of 245 to 280 mm (for an 8-inch wafer) (6-inch wafer compatible type), or in the range of 495 to 530 mm (18-inch wafer compatible type). The dicing tape 10 in the dicing die-bonding film X has a laminated structure including the base material 11 and the pressure-sensitive adhesive layer 12. Fig.

(materials)

The base material 11 in the dicing tape 10 is an element that functions as a support in the dicing tape 10 and the dicing die-bonding film X. As the substrate 11, for example, a plastic substrate (particularly a plastic film) can be mentioned. The base material (11) may be a single layer or a base material laminate of the same or different types.

Examples of the resin constituting the plastic substrate include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolypropylene, polybutene, polymethyl (Meth) acrylic acid ester (random, alternating) copolymer, an ethylene-butene copolymer, an ethylene-butene copolymer, an ethylene-vinyl acetate copolymer (EVA), an ethylene- Polyolefin resin; Polyurethane; Polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate and polybutylene terephthalate (PBT); Polycarbonate; Polyimide; Polyether ether ketone; Polyetherimide; Polyamides such as aramid and wholly aromatic polyamide; Polyphenylsulfide; Fluorine resin; Polyvinyl chloride; Polyvinylidene chloride; Cellulose resin; Silicone resin, and the like. From the viewpoint of ensuring good heat shrinkability in the base material 11 and easily maintaining the chip separation distance in the room temperature expanding step to be described later by using the partial heat shrinkage of the dicing tape 10 or the base material 11, 11) preferably contains an ethylene-vinyl acetate copolymer as a main component. The main component of the base material 11 is a component that occupies the largest mass ratio among the constituent components. The resin may be used alone or in combination of two or more. When the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer as described later, it is preferable that the base material 11 has radiation transmittance.

When the base material 11 is a plastic film, the plastic film may be unoriented or oriented in at least one direction (uniaxial, biaxial, etc.). When oriented in at least one direction, the plastic film becomes heat shrinkable in at least one direction. It is possible to heatshrink the outer circumferential portion of the semiconductor wafer of the dicing tape 10. This makes it possible to fix the semiconductor chips in a state in which the spacing between the separated semiconductor chips with the adhesive layer is widened The semiconductor chip can be easily picked up. In order for the base material 11 and the dicing tape 10 to have isotropic heat shrinkability, the base material 11 is preferably a biaxially oriented film. The plastic film oriented in at least one direction can be obtained by stretching a non-stretchable plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.). The substrate 11 and the dicing tape 10 preferably have a heat shrinkage of 1 to 30% in a heat treatment test conducted under the conditions of a heating temperature of 100 캜 and a heating time of 60 seconds, more preferably 2 To 25%, more preferably 3 to 20%, and particularly preferably 5 to 20%. The heat shrinkage ratio is preferably a heat shrinkage ratio in at least one of the MD direction and the TD direction.

The surface of the substrate 11 on the side of the pressure sensitive adhesive layer 12 may be subjected to various treatments such as corona discharge treatment, plasma treatment, sand mat treatment, ozone exposure treatment, Physical treatment such as exposure treatment, high-voltage electric exposure treatment, and ionizing radiation treatment; Chemical treatment such as chromic acid treatment; Or surface treatment such as adhesion facilitating treatment with a coating agent (primer) may be performed. In addition, in order to impart the antistatic property, a conductive vapor deposition layer containing a metal, an alloy, an oxide thereof, etc. may be provided on the surface of the substrate 11. It is preferable that the surface treatment for enhancing the adhesion is performed on the entire surface of the base material 11 on the pressure-sensitive adhesive layer 12 side.

The thickness of the base material 11 is preferably 40 占 퐉 or more from the viewpoint of securing the strength for the base material 11 to function as a support in the dicing tape 10 and the dicing die-bonding film X, Is at least 50 mu m, more preferably at least 55 mu m, particularly preferably at least 60 mu m. From the viewpoint of achieving appropriate flexibility in the dicing tape 10 and the dicing die-bonding film X, the thickness of the base material 11 is preferably 200 占 퐉 or less, more preferably 180 占 퐉 or less Preferably 150 mu m or less.

(Pressure-sensitive adhesive layer)

As described above, the pressure-sensitive adhesive layer 12 in the dicing die-bonding film X is formed by pressing the pressure-sensitive adhesive layer surface 12a at 500 nm by the nanoindentation method under the conditions of a temperature of 23 DEG C and a frequency of 100 Hz Of 0.1 to 20 MPa, preferably 0.5 to 15 MPa, and more preferably 1 to 10 MPa. Since the elastic modulus by the nanoindentation method is 0.1 MPa or more, the stress generated at the time of expansion tends to be easily transmitted to the adhesive layer, so that the adhesive layer can be satisfactorily made. Further, The adhesiveness can be made appropriate, and peeling between the pressure-sensitive adhesive layer and the adhesive layer in the expanding process can be suppressed. Further, since the elastic modulus by the nanoindentation method is 20 MPa or less, cracking of the pressure-sensitive adhesive layer in the expanding process can be made difficult, and in the pick-up process, So that it is possible to realize a good pickup.

The elastic modulus by the nanoindentation method is obtained by continuously measuring the load applied to the indenter and the indentation depth at the time of loading and unloading when the indenter is press-fitted into the surface of the pressure-sensitive adhesive layer, Means the elastic modulus obtained from the curve. That is, the elastic modulus by the nanoindentation method is an index showing the physical properties of the surface of the pressure-sensitive adhesive layer, and is different from the elastic modulus such as the tensile elastic modulus obtained by the conventional viscoelasticity measurement, which is an index showing the physical properties of the whole pressure- . The elastic modulus of the pressure-sensitive adhesive layer according to the nanoindentation method is an elastic modulus obtained by a nanoindentation test under the conditions of a load of 1 mN, a load / unloading speed of 0.1 mN / s, and a holding time of 1 s.

The pressure-sensitive adhesive layer 12 of the dicing tape 10 preferably contains an acrylic polymer as the base polymer. The acrylic polymer is a polymer comprising a constituent unit derived from an acrylic monomer (a monomer component having a (meth) acryloyl group in the molecule) as a constituent unit of the polymer. The acrylic polymer is preferably a polymer containing the structural unit derived from the (meth) acrylic acid ester in the most by mass ratio. The acrylic polymer may be used alone or in combination of two or more. In the present specification, the term "(meth) acrylic" refers to "acrylic" and / or "methacrylic" (either or both of "acrylic" and "methacrylic") and the like.

Examples of the (meth) acrylic acid esters include (meth) acrylic acid esters containing a hydrocarbon group. Examples of the hydrocarbon group-containing (meth) acrylic acid esters include hydrocarbon group-containing (meth) acrylic acid esters such as (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester and (meth) acrylic acid aryl ester. Examples of the alkyl (meth) acrylate ester include methyl esters, ethyl esters, isopropyl esters, butyl esters, isobutyl esters, s-butyl esters, t-butyl esters, pentyl esters, (Lauryl esters), tridecyl esters, isodecyl esters, isodecyl esters, isodecyl esters, isodecyl esters, isodecyl esters, isobutyl esters, isobutyl esters, isopentyl esters, hexyl esters, heptyl esters, octyl esters, Tetradecyl ester, hexadecyl ester, octadecyl ester, eicosyl ester, and the like. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl esters include phenyl esters of (meth) acrylic acid and benzyl esters. The (meth) acrylic acid ester containing a hydrocarbon group is preferably a (meth) acrylic acid alkyl ester, more preferably a (meth) acrylate having an alkyl group having 10 or more carbon atoms. That is, the acrylic polymer preferably contains a (meth) acrylate-derived structural unit having an alkyl group having 10 or more carbon atoms. The hydrocarbon group-containing (meth) acrylate ester may be used alone or in combination of two or more.

Examples of the (meth) acrylate having an alkyl group having 10 or more carbon atoms include (meth) decyl acrylate, isodecyl (meth) acrylate, undecyl (meth) acrylate, dodecyl Alkyl groups having 10 to 25 carbon atoms (such as a C _10-25 alkyl group (e.g., methyl (meth) acrylate) such as methyl (meth) acrylate, decyl (meth) acrylate, tetradecyl (meth) acrylate, hexadecyl (meth) acrylate, octadecyl (Meth) acrylate. Among them, lauryl (meth) acrylate is preferable.

(Meth) acrylic esters containing hydrocarbon groups in the entire monomer component for forming an acrylic polymer (particularly, the (meth) acrylic acid ester-containing (meth) acrylic acid esters for forming an acrylic polymer (Meth) acrylate having an alkyl group having 10 or more carbon atoms) is preferably 40 mass% or more, and more preferably 60 mass% or more.

The acrylic polymer may contain a structural unit derived from another monomer component copolymerizable with the hydrocarbon group-containing (meth) acrylic ester, for the purpose of modifying the cohesive force, heat resistance, and the like. Examples of the other monomer component include functional group-containing monomers such as carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide and acrylnitrile have. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid. Examples of the acid anhydride monomers include maleic anhydride, itaconic anhydride, and the like. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (Meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate and (4-hydroxymethylcyclohexyl) methyl . Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methylglycidyl (meth) acrylate. (Meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acrylamide, Acryloyloxynaphthalenesulfonic acid and the like. Examples of the phosphate group-containing monomer include 2-hydroxyethyl acryloyl phosphate and the like. As the other monomer component, a monomer having a hydroxyl group is preferable, and more preferred is 2-hydroxyethyl (2-hydroxyethyl (meth) acrylate) (meth) acrylate. That is, the acrylic polymer preferably contains a structural unit derived from 2-hydroxyethyl (meth) acrylate. The other monomer component may be used alone or in combination of two or more.

(Meth) acrylate ester in the pressure-sensitive adhesive layer 12, it is preferable that the above-mentioned other monomer component (in particular, 2-hydroxycyclohexylmethane) in the entire monomer component for forming the acrylic polymer (Meth) acrylate) is preferably 60 mass% or less, and more preferably 40 mass% or less.

The acrylic polymer is preferably an acrylic polymer containing at least a constituent unit derived from a (meth) acrylate having an alkyl group having at least 10 carbon atoms and a constituent unit derived from 2-hydroxyethyl (meth) acrylate May be referred to as " That is, the pressure-sensitive adhesive layer 12 contains a first acrylic polymer containing at least a constituent unit derived from a (meth) acrylate having an alkyl group having 10 or more carbon atoms and a constituent unit derived from 2-hydroxyethyl (meth) acrylate . When the pressure-sensitive adhesive layer 12 contains the first acrylic polymer, peeling of the adhesive layer-attached semiconductor chip from the pressure-sensitive adhesive layer of the dicing tape in the pick-up process is made easier, and a better pick-up can be realized.

The molar ratio of the constitutional unit derived from (meth) acrylate having an alkyl group having 10 or more carbon atoms to the constitutional unit derived from 2-hydroxyethyl (meth) acrylate in the first acrylic polymer is preferably 1 or more , More preferably 3 or more, and further preferably 5 or more. The molar ratio is preferably 40 or less, more preferably 35 or less, further preferably 30 or less. As the molar ratio decreases, the interaction between the pressure-sensitive adhesive layer on the dicing tape and the adhesive layer on the pressure-sensitive adhesive layer tends to become strong. When the molar ratio is 1 or more, the interaction can be suppressed relatively low, The peeling of the adhesive layer-attached semiconductor chip from the pressure-sensitive adhesive layer of the dicing tape in the pick-up process becomes easier, and a better pick-up can be realized. When the molar ratio is 40 or less, the above interaction can be maintained to a certain extent, adhesion between the adhesive layer of the dicing tape and the adhesive layer on the dicing tape is ensured, and in the expanding process, It is possible to further suppress the occurrence of partial exfoliation from the pressure-sensitive adhesive layer.

The acrylic polymer containing the first acrylic polymer may contain a structural unit derived from a multifunctional monomer copolymerizable with the monomer component forming the acrylic polymer in order to form a crosslinked structure in the polymer backbone. Examples of the polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (Meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate Monomers having a (meth) acryloyl group and other reactive functional groups in the molecule such as polyglycidyl (meth) acrylate), polyester (meth) acrylate and urethane (meth) have. The multifunctional monomers may be used alone or in combination of two or more. In order to appropriately express the basic properties such as adhesion by the hydrocarbon group-containing (meth) acrylate ester in the pressure-sensitive adhesive layer 12, the proportion of the above-mentioned polyfunctional monomer in the total monomer component for forming the acrylic polymer is preferably 40 mass% % Or less, more preferably 30 mass% or less.

The acrylic polymer is obtained by subjecting at least one monomer component containing an acrylic monomer to polymerization. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

The number-average molecular weight of the acrylic polymer is preferably 100,000 or more, and more preferably 200,000 to 3,000,000. If the number average molecular weight is 100,000 or more, the low molecular weight substance in the pressure-sensitive adhesive layer tends to be small, and the contamination of the adhesive layer, the semiconductor wafer, and the like can be further suppressed.

The pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer (12) or the pressure-sensitive adhesive layer (12) may contain a crosslinking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer may be crosslinked to further reduce the low molecular weight substance in the pressure-sensitive adhesive layer 12. [ In addition, the number average molecular weight of the acrylic polymer can be increased. Examples of the crosslinking agent include a polyisocyanate compound, an epoxy compound, a polyol compound (such as a polyphenol compound), an aziridine compound, and a melamine compound. When a crosslinking agent is used, the amount of the crosslinking agent to be used is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, based on 100 parts by mass of the base polymer.

The pressure-sensitive adhesive layer (12) may be a pressure-sensitive adhesive layer (pressure-sensitive adhesive force-reducing type pressure-sensitive adhesive layer) capable of intentionally reducing the pressure-sensitive adhesive force by external action such as irradiation with radiation or heating. Depending on the external action, (Pressure-sensitive adhesive force-reducing type pressure-sensitive adhesive layer) which is not reduced by the dicing die-bonding film X, and can be appropriately selected in accordance with the method and conditions of the semiconductor wafer to be separated using the dicing die-

In the case where the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive force-reducing type pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 12 exhibits a relatively high adhesive force in a manufacturing process or a use process of the dicing die- Can be used separately. For example, when the adhesive layer 20 is bonded to the pressure-sensitive adhesive layer 12 of the dicing tape 10 in the process of manufacturing the dicing die-bonding film X, or when the dicing die bonding film X is used in the dicing process It is possible to suppress or prevent lifting of an adherend such as the adhesive layer 20 from the pressure-sensitive adhesive layer 12 by using a state in which the pressure-sensitive adhesive layer 12 exhibits a relatively high adhesive force, In the pick-up process for picking up the semiconductor chip with adhesive layer from the dicing tape 10 of the die-bonding film X, the adhesive force of the pressure-sensitive adhesive layer 12 is reduced so that pickup can be easily performed.

Examples of the pressure-sensitive adhesive for forming such a pressure-sensitive adhesive layer of a pressure-sensitive adhesive type include a radiation-curable pressure-sensitive adhesive, a heat-foamable pressure-sensitive adhesive, and the like. As the pressure-sensitive adhesive for forming the pressure-sensitive adhesive force-reducing pressure-sensitive adhesive layer, one type of pressure-sensitive adhesive may be used, or two or more pressure-sensitive adhesives may be used.

As the radiation-curable pressure-sensitive adhesive, for example, a pressure-sensitive adhesive of the type which is cured by irradiation with an electron beam, ultraviolet ray,? -Ray,? -Ray,? -Ray or X- A pressure-sensitive adhesive) can be particularly preferably used.

Examples of the radiation-curable pressure-sensitive adhesive include radiation-curing pressure-sensitive adhesives of the addition type containing a base polymer such as the above acrylic polymer and a radically polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon- have.

Examples of the radiation polymerizable monomer component include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (Meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based and polybutadiene-based oligomers and preferably have a molecular weight of about 100 to 30000. The content of the radiation curable monomer component and oligomer component in the radiation curing pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass with respect to 100 parts by mass of the base polymer Mass part. As the addition type radiation curable pressure sensitive adhesive, for example, those disclosed in Japanese Patent Application Laid-open No. 60-196956 may be used.

Examples of the radiation-curable pressure-sensitive adhesive include internal-type radiation-curable pressure-sensitive adhesives containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the polymer side chain, the polymer main chain, and the polymer main chain terminal. When such an intrinsic type radiation-curing pressure-sensitive adhesive is used, there is a tendency to suppress unintended changes in the pressure-sensitive adhesive properties due to the movement of the low molecular weight component in the formed pressure-sensitive adhesive layer 12 over time.

As the base polymer contained in the radiation-curing pressure-sensitive adhesive of the internal form, an acrylic polymer (particularly, the above-mentioned first acrylic polymer) is preferable. As a method for introducing a radiation-polymerizable carbon-carbon double bond to an acrylic polymer, for example, there is a method of polymerizing (copolymerizing) a raw monomer containing a monomer component having a first functional group to obtain an acrylic polymer, And a compound having a radiation-polymerizable carbon-carbon double bond in a condensation reaction or addition reaction with an acrylic polymer while maintaining the radiation-polymerizing property of the carbon-carbon double bond .

Examples of the combination of the first functional group and the second functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, an isocyanate group and a hydroxy group. Among these, a combination of a hydroxy group and an isocyanate group, and a combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of easiness in tracking the reaction. In particular, from the viewpoint of preparation and availability of an acrylic polymer having a hydroxy group, the polymer having an isocyanate group having a high reactivity is highly technically difficult, and the first functional group is a hydroxy group, Is preferred. Examples of the isocyanate compound having an isocyanate group and a radiation-polymerizable carbon-carbon double bond in this case, that is, a radiation-polymerizable unsaturated functional group-containing isocyanate compound include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m -Isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Examples of the acrylic polymer having a hydroxy group include a structural unit derived from an ether compound such as the above-mentioned hydroxy group-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether and diethylene glycol monovinyl ether .

When the first acrylic polymer has a constitutional unit derived from an isocyanate compound containing an unsaturated functional group, the content of the constitutional unit derived from the unsaturated functional group-containing isocyanate compound in the first acrylic polymer and the constitutional unit derived from 2-hydroxyethyl (meth) Is preferably 0.1 or more, more preferably 0.2 or more, and further preferably 0.3 or more. The molar ratio is preferably 2 or less, more preferably 1.5 or less, still more preferably 1 or less. When the molar ratio is 0.1 or more, the elastic modulus of the pressure-sensitive adhesive layer after radiation curing by the nanoindentation method tends to be improved, and the adhesive layer can be made better in the expanding process. When the molar ratio is 2 or less, the elastic modulus of the pressure-sensitive adhesive layer after radiation curing by the nanoindentation method tends to be lowered, and cracking of the pressure-sensitive adhesive layer in the expanding process can be made more difficult.

The radiation-curable pressure-sensitive adhesive preferably contains a photopolymerization initiator. As the photopolymerization initiator, for example, an? -Ketol compound, an acetophenone compound, a benzoin ether compound, a ketal compound, an aromatic sulfonyl chloride compound, a photoactive oxime compound, a benzophenone compound, Tonometal compounds, camphorquinones, halogenated ketones, acylphosphine oxides, acylphosphonates and the like. Examples of the? -Ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone,? -Hydroxy- ?,? '- dimethylacetophenone, 2- Methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone, and the like. Examples of the acetophenone compound include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -Phenyl] -2-morpholinopropane-1. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal compound include benzyl dimethyl ketal and the like. Examples of the aromatic sulfonyl chloride-based compound include 2-naphthalenesulfonyl chloride and the like. As the photoactive oxime compound, for example, 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime and the like can be given. Examples of the benzophenone-based compound include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of the thioxanthone compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichloroti 2,4-diethyl thioxanthone, 2,4-diisopropyl thioxanthone, and the like. The content of the photopolymerization initiator in the radiation-curing pressure-sensitive adhesive is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer.

The heat-expandable pressure-sensitive adhesive is a pressure-sensitive adhesive containing components (foaming agent, heat-expandable microspheres, etc.) which foam or expand by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, and azide. Examples of the organic foaming agent include salt fluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane; Azo compounds such as azobisisobutyronitrile, azodicarbonamide, and barium azodicarboxylate; azo compounds such as para-toluenesulfonyl hydrazide, diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'- Hydrazine compounds such as oxybis (benzene sulfonyl hydrazide) and allyl bis (sulfonyl hydrazide); a semicarbazide-based compound such as p-toluenesulfonyl semicarbazide, 4,4'-oxybis (benzenesulfonyl semicarbazide); Triazole-based compounds such as 5-morpholyl-1,2,3,4-thiatriazole; N-nitroso compounds such as N, N'-dinitrosopentamethylenetetramine and N, N'-dimethyl-N, N'-dinitrosoterephthalamide. Examples of the thermally expandable microspheres include microspheres having a structure in which a substance which is easily gasified by heating and is expanded is enclosed in the outer shell. Examples of the material which is easily gasified and expanded by the above heating include isobutane, propane, pentane and the like. A thermally expandable microsphere can be manufactured by enclosing a material which easily gasifies and expands by heating in an envelope forming material by a coacervation method or an interfacial polymerization method. As the shell-forming material, a material exhibiting heat melting property or a material capable of being ruptured by the thermal expansion action of the encapsulating material can be used. Examples of such a substance include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone and the like.

Examples of the adhesive force-reducing pressure-sensitive adhesive layer include a pressure-sensitive adhesive layer. The pressure-sensitive adhesive layer includes a pressure-sensitive adhesive layer having a constant adhesive force while curing the pressure-sensitive adhesive layer formed by the above-described radiation-curable pressure-sensitive adhesive with respect to the pressure-sensitive adhesive force- As the pressure-sensitive adhesive for forming the pressure-sensitive adhesive force-reducing pressure-sensitive adhesive layer, one type of pressure-sensitive adhesive may be used, or two or more pressure-sensitive adhesives may be used. The entirety of the pressure-sensitive adhesive layer 12 may be a pressure-sensitive adhesive force-reducing pressure-sensitive adhesive layer or a part of the pressure-sensitive adhesive force-lowering pressure-sensitive adhesive layer. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the whole pressure-sensitive adhesive layer 12 may be a pressure-sensitive adhesive force-reducing pressure-sensitive adhesive layer, Sensitive adhesive layer may be an adhesion-reducing type pressure-sensitive adhesive layer, and another portion (for example, a central region which is an adhesion target region of the semiconductor wafer) may be an adhesion-reducing type pressure-sensitive adhesive layer. When the pressure-sensitive adhesive layer 12 has a laminated structure, all of the pressure-sensitive adhesive layers in the laminated structure may be a pressure-sensitive adhesive force-reducing pressure-sensitive adhesive layer, and a part of the pressure-sensitive adhesive layer in the laminated structure may be a pressure-

The pressure-sensitive adhesive layer (radiation-cured radiation-curable pressure-sensitive adhesive layer after completion of irradiation) in which the pressure-sensitive adhesive layer formed of the radiation-curable pressure-sensitive adhesive is cured by irradiation in advance has a tackiness due to the contained polymer component And it is possible to exhibit the minimum necessary adhesive force to the pressure-sensitive adhesive layer of the dicing tape in the dicing step or the like. When the radiation-cured radiation-curable pressure-sensitive adhesive layer is used, the entirety of the pressure-sensitive adhesive layer 12 may be a radiation-cured pressure-sensitive adhesive layer in the face-up direction of the pressure-sensitive adhesive layer 12, The radiation-curable pressure-sensitive adhesive layer may be a radiation-cured pressure-sensitive adhesive layer and the other portion may be a radiation curable pressure-sensitive adhesive layer not irradiated with radiation.

As the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer, a pressure-sensitive adhesive of known or common type can be used, and an acrylic pressure-sensitive adhesive or a rubber pressure-sensitive adhesive using an acrylic polymer as a base polymer can be preferably used. When the pressure-sensitive adhesive layer 12 contains an acrylic polymer as a pressure-sensitive adhesive, the acrylic polymer is preferably a polymer containing the constituent unit derived from the (meth) acrylic acid ester as the largest structural unit in the mass ratio. As the acrylic polymer, for example, an acrylic polymer (for example, a first acrylic polymer) described as an acrylic polymer that can be contained in the above-mentioned pressure-sensitive adhesive layer can be employed.

The pressure-sensitive adhesive agent for forming the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive layer 12 is used for a known or common pressure-sensitive adhesive layer such as a crosslinking accelerator, a tackifier, an antioxidant, a colorant May be blended. As the coloring agent, for example, there can be mentioned a compound which is colored by irradiation with radiation. In the case of containing a compound that is colored by irradiation, only the irradiated portion can be colored. The compound that is colored by irradiation with the radiation is a colorless or pale color before the irradiation with the radiation, but is a compound which becomes colored by irradiation with radiation, and examples thereof include leuco dyes and the like. The amount of the compound to be colored by irradiation with the radiation is not particularly limited and may be appropriately selected.

The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but it is preferable that the thickness of the pressure-sensitive adhesive layer 12 before and after the radiation curing of the pressure-sensitive adhesive layer 12 in the case of the pressure- But is preferably about 1 to 50 mu m, more preferably 2 to 30 mu m, and still more preferably 5 to 25 mu m from the viewpoint of balancing the adhesive force.

(Adhesive layer)

The adhesive layer 20 functions as an adhesive exhibiting a thermosetting property for die bonding and an adhesive function for holding a frame member such as a ring frame with a work such as a semiconductor wafer. The adhesive layer 20 can be peeled off by application of a tensile stress and is used by peeling off by applying a tensile stress.

The adhesive constituting the adhesive layer 20 and the adhesive layer 20 may contain a thermosetting resin and, for example, a thermoplastic resin as a binder component, or may contain a thermoplastic resin having a thermosetting functional group capable of reacting with the curing agent to cause bonding . When the adhesive constituting the adhesive layer 20 includes a thermoplastic resin having a thermosetting functional group, the adhesive need not include a thermosetting resin (such as an epoxy resin). The adhesive layer 20 may have a single-layer structure or a multi-layer structure.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, Thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins and fluororesins. The thermoplastic resin may be used alone or in combination of two or more. As the thermoplastic resin, an acrylic resin is preferable because it is easy to secure bonding reliability by the adhesive layer 20 because it has few ionic impurities and high heat resistance.

From the viewpoint of both adhesion of the adhesive layer 20 to the ring frame at room temperature and its vicinity temperature and prevention of residue at the time of peeling, the adhesive layer 20 is preferably a glass transition temperature- It is preferable to include a polymer at 10 to 10 占 폚. The main component of the thermoplastic resin is a resin component that occupies the largest mass ratio among the components of the thermoplastic resin.

As the glass transition temperature of the polymer, a glass transition temperature (theoretical value) obtained based on the following Fox equation can be used. The formula of Fox is a relational expression between the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of the homopolymer for each constituent monomer in the polymer. In the following Fox equation, Tg represents the glass transition temperature (占 폚) of the polymer, Wi represents the weight fraction of the monomer i constituting the polymer, Tgi represents the glass transition temperature (占 폚) of the homopolymer of the monomer i . For example, reference may be made to the glass transition temperature of the homopolymer, for example, " Introduction of synthetic resin for novel polymeric paper 7 paint " (Gitaoka Kogyo Co., (Mitsubishi Rayon Co., Ltd.), glass transition temperatures of various homopolymers are illustrated. On the other hand, the homopolymer glass transition temperature of the monomer can be determined by a method specifically disclosed in Japanese Patent Laid-Open No. 2007-51271.

Fox's equation 1 / (273 + Tg) =? [Wi / (273 + Tgi)]

It is preferable that the acrylic resin contains a constituent unit derived from a (meth) acrylate ester containing a hydrocarbon group as the largest constituent unit in mass ratio. Examples of the hydrocarbon group-containing (meth) acrylic acid ester include hydrocarbon group-containing (meth) acrylic acid esters exemplified as hydrocarbon group-containing (meth) acrylic acid esters that form an acrylic polymer that may be contained in the pressure- .

The acrylic resin may contain a structural unit derived from another monomer component copolymerizable with the (meth) acrylic acid ester containing a hydrocarbon group. Examples of the other monomer component include functional group-containing monomers such as carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide and acrylonitrile Polyfunctional monomers and the like. Specifically, those exemplified as other monomer components constituting the acrylic polymer which can be contained in the above-mentioned pressure-sensitive adhesive layer can be used.

Among them, an acrylic polymer having a nitrile group (sometimes referred to as a " second acrylic polymer ") is preferable as the acrylic resin. In particular, it is preferable that the pressure-sensitive adhesive layer 12 comprises the first acrylic polymer and the adhesive layer 20 comprises the second acrylic polymer. According to the constitution in which the pressure-sensitive adhesive layer 12 contains the first acrylic polymer and the adhesive layer 20 contains the second acrylic polymer, a high shear adhesive force is secured between both layers, It is possible to further suppress the occurrence of lifting from the pressure-sensitive adhesive layer of the semiconductor chip with an adhesive layer in the expanding process and to achieve a better pickup in the pickup process. Particularly, in the case where the pressure-sensitive adhesive layer and the adhesive layer are laminated through the above-described lamination application method, the above-described structure is preferable because the bonding interaction in the lamination direction between the two layers is likely to be excessive.

The second acryl-based polymer having a nitrile group preferably contains a structural unit derived from a nitrile group-containing monomer. Examples of the nitrile group-containing monomer include acrylonitrile, methacrylonitrile, and cyanostyrene.

Derived from the nitrile group in the infrared absorption spectrum of the second acryl-based polymer having a nitrile group at a peak near 1730 cm ^-1 derived from the carbonyl group (peak of absorption attributable to C = O stretching vibration) of 2240 cm ^-1 The value of the ratio of the height of the peak near the peak (absorption peak belonging to C? N stretching vibration) is preferably 0.01 or more, more preferably 0.015 or more, and still more preferably 0.02 or more. The value of the ratio is preferably 0.1 or less, more preferably 0.09 or less, and still more preferably 0.08 or less. That is, the relative content of the nitrile group of the second acrylic polymer is preferably set to such a degree that the value of the ratio converges within this range. When the value of the ratio is 0.01 or more, a better pickup in the pickup process can be realized. When the ratio is 0.1 or less, it is possible to further suppress the occurrence of lifting from the pressure-sensitive adhesive layer of the semiconductor chip having the adhesive layer that has been subjected to the cutting process in the expanding process.

When the adhesive layer 20 contains a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, a thermosetting polyimide Resins and the like. The thermosetting resin may be used alone or in combination of two or more. An epoxy resin is preferable as the above-mentioned thermosetting resin because there is a tendency that the content of ionic impurities or the like which can cause corrosion of semiconductor chips subject to die bonding tends to be small. As the curing agent of the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include epoxy resins such as bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type , Orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylol ethane type, hydantoin type, trisglycidyl isocyanurate type, and glycidyl amine type epoxy resins. Of these, novolak type epoxy resins, biphenyl type epoxy resins, trishydroxyphenyl methane type epoxy resins, and tetraphenylol ethane type epoxy resins are preferable because of their abundant reactivity with phenol resins as curing agents and excellent heat resistance Do.

Examples of the phenol resin which can act as a curing agent for the epoxy resin include novolak type phenol resins, resol type phenol resins, and polyoxystyrenes such as polyparaxyxstyrene. Examples of the novolak-type phenol resin include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, nonylphenol novolac resins, and the like. The phenol resin may be used alone or in combination of two or more. Among them, a phenol novolak resin and a phenol aralkyl resin are preferable from the viewpoint of improving the connection reliability of the adhesive when used as a curing agent of an epoxy resin as an adhesive for die bonding.

In view of sufficiently accelerating the curing reaction between the epoxy resin and the phenol resin in the adhesive layer 20, the phenol resin preferably has a hydroxyl group in the phenol resin in an amount of preferably 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component, More preferably 0.7 to 1.5 equivalents.

In the case where the adhesive layer 20 contains a thermosetting resin, the content ratio of the thermosetting resin is preferably in the range of 10 to 50 mass% , Preferably from 5 to 60 mass%, and more preferably from 10 to 50 mass%.

When the adhesive layer 20 comprises a thermoplastic resin having a thermosetting functional group (for example, a second acrylic polymer), for example, an acrylic resin containing a thermosetting functional group may be used as the thermoplastic resin. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains structural units derived from hydrocarbon group-containing (meth) acrylic acid esters as the largest structural units in mass ratio. Examples of the hydrocarbon group-containing (meth) acrylic acid ester include hydrocarbon group-containing (meth) acrylic acid esters exemplified as hydrocarbon group-containing (meth) acrylic acid esters that form an acrylic polymer that may be contained in the pressure- . On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxyl group, and an isocyanate group. Among them, a glycidyl group and a carboxyl group are preferable. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin and a carboxyl group-containing acrylic resin are particularly preferable. In addition, it is preferable to include a curing agent together with an acrylic resin containing a thermosetting functional group. Examples of the curing agent include those exemplified as crosslinking agents that can be contained in the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 described above. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenolic compound as a curing agent, and for example, the above-mentioned various phenolic resins can be used.

The epoxy value of the second acrylic polymer that may be contained in the adhesive layer 20 is preferably 0.05 eq / kg or more, more preferably 0.1 eq / kg or more, and still more preferably 0.2 eq / kg or more. The epoxy value of the second acrylic polymer is preferably 1 eq / kg or less, more preferably 0.9 eq / kg or less. The content of such epoxy resin in the adhesive layer 20 of the second acrylic polymer is preferably from 5 to 95 mass%, and more preferably from 40 to 80 mass%.

The carboxylic acid value of the second acrylic polymer that can be contained in the adhesive layer 20 is preferably 1 mgKOH / g or more, more preferably 3 mgKOH / g or more, and still more preferably 5 mgKOH / g or more. The carboxylic acid value of the second acrylic polymer is preferably 20 mgKOH / g or less, and more preferably 18 mgKOH / g or less. The content of the second acrylic polymer in the adhesive layer (20) is preferably from 5 to 95 mass%, more preferably from 40 to 80 mass%.

In order to realize a certain degree of degree of crosslinking with respect to the adhesive layer 20 before being cured for die bonding, it is necessary to react with, for example, a functional group at the molecular chain terminal of the aforementioned resin, which may be contained in the adhesive layer 20, It is preferable to blend the polyfunctional compound capable of crosslinking with the resin composition for forming an adhesive layer as a crosslinking component. Such a configuration is preferable for the adhesive layer 20 from the viewpoints of improving the adhesive property under high temperature and also from the viewpoint of improving the heat resistance. Examples of the cross-linking component include a polyisocyanate compound. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylenediisocyanate, 1,5-naphthalene diisocyanate, adducts of polyhydric alcohol and diisocyanate, and the like. The content of the crosslinking component in the resin composition for forming an adhesive layer is preferably from 0.05 mass% to 100 mass parts of the resin having the functional group capable of reacting with the crosslinking component to improve the cohesion of the adhesive layer 20 to be formed Or more, and is preferably 7 parts by mass or less from the viewpoint of improving the adhesive strength of the adhesive layer 20 to be formed. As the crosslinking component, another polyfunctional compound such as an epoxy resin may be used in combination with the polyisocyanate compound.

The content ratio of the high molecular weight component in the adhesive layer 20 is preferably 50 to 100% by mass, and more preferably 50 to 80% by mass. The high molecular weight component is a component having a weight average molecular weight of 10,000 or more. When the content of the high molecular weight component is within the above range, adhesion between the adhesive layer 20 at the room temperature and its vicinity and prevention of residue at the time of peeling can be achieved. The adhesive layer 20 may contain a liquid resin that is liquid at 23 占 폚. When the adhesive layer 20 contains the liquid resin, the content of the liquid resin in the adhesive layer 20 is preferably 1 to 10% by mass, and more preferably 1 to 5% by mass. When the content ratio of the liquid resin is within the above range, adhesion between the adhesive layer 20 at a room temperature and a temperature near the ring frame to be described later is preferable, and prevention of residue at the time of peeling is satisfied.

The adhesive layer 20 preferably contains a filler. The physical properties such as the conductivity, thermal conductivity, and elastic modulus of the adhesive layer 20 can be adjusted by the combination of the filler in the adhesive layer 20. Examples of the filler include an inorganic filler and an organic filler, and an inorganic filler is particularly preferable. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, , Metals such as aluminum, gold, silver, copper, and nickel, alloys, amorphous carbon black, and graphite. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. As the filler, only one type may be used, or two or more types may be used. From the viewpoint of securing the adhesiveness of the adhesive layer 20 to the ring frame in the cool expansion process to be described later, the filler content in the adhesive layer 20 is preferably 30% by mass or less, more preferably 30% 25% by mass or less.

The average particle diameter of the filler is preferably 0.005 to 10 mu m, more preferably 0.005 to 1 mu m. When the average particle diameter is 0.005 mu m or more, wettability and adhesion to an adherend such as a semiconductor wafer are further improved. When the average particle diameter is 10 탆 or less, the effect of the filler added for imparting the respective characteristics can be sufficient and the heat resistance can be ensured. The average particle diameter of the filler can be obtained by using, for example, a particle size distribution meter (for example, trade name "LA-910" manufactured by Horiba Seisakusho Co., Ltd.) of a photometric system.

The adhesive layer 20 may contain other components as required. Examples of the other components include a curing catalyst, a flame retardant, a silane coupling agent, an ion trap agent, and a dye. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. Examples of the silane coupling agent include, for example,? - (3,4-epoxycyclohexyl) ethyltrimethoxysilane,? -Glycidoxypropyltrimethoxysilane,? -Glycidoxypropylmethyldiethoxysilane, . Examples of the ion trap agent include hydrotalcites, bismuth hydroxide, antimony oxide (e.g., " IXE-300 ", manufactured by Toagosei Co., Ltd.), zirconium phosphate having a specific structure (E.g., " IXE-100 ", manufactured by Shikisai K.K.), magnesium silicate (e.g., " KYOWAD 600 ", manufactured by KYOWA KAGAKU KOGYO KABUSHIKI KAISHA) &Quot; Kyowade 700 "). A compound capable of forming a complex between metal ions can also be used as an ion trap agent. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridyl-based compounds. Of these, triazole-based compounds are preferable from the viewpoint of the stability of the complex formed between the metal ions. Examples of such triazole compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-3-t-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy- Butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- Phenyl) benzotriazole, 6- (2-benzotriazolyl) -4-t-octyl-6'- Dihydroxypropyl) benzotriazole, 1- (1,2-dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4- - [(H-benzotriazol-1-yl) methyl} phenol, 2- (2-hydroxy-5-t- butylphenyl) -2H-benzotriazole, C7- (2H-benzotriazol-2-yl) -5- (1,1-dimethylethyl) -4-hydroxyphenyl] propionate, octyl- Phenyl] propionate, 2-ethylhexyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazole- Phenyl] propionate, 2- (2H-benzotriazol-2-yl) -6- (1-methyl- Butylphenol, 2- (2H-benzotriazol-2-yl) -4-t-butylphenol, 2- (2-hydroxy- 2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2 (3-t- (2-hydroxy-3,5-di-t-butylphenyl) -5-chloro-benzotriazole, Benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazol-2-yl) -1,2,3,4-tetrahydro- ) - 4- (1,1,3,3-tetramethylbutyl) phenol], 2- [2-hydroxy-3,5-bis (?,? - dimethylbenzyl) phenyl] -2H-benzotriazole, Methyl-3- [3- (2H-benzotriazol-2-yl) -5-t-butyl- Phenyl] propionate. In addition, a predetermined hydroxyl group-containing compound such as a quinoline compound, a hydroxyanthraquinone compound, or a polyphenol compound can also be used as an ion trap agent. Specific examples of such hydroxyl group-containing compounds include 1,2-benzene diol, alizarin, anthrulphine, tannin, gallic acid, methyl gallate, pyrogallol and the like. The above-mentioned other additives may be used alone or in combination of two or more.

The adhesive layer 20 preferably has an adhesive force of 0.1 to 20 N / 10 mm, more preferably 0.5 to 15 N / 10 mm, at a temperature of 23 캜, a peeling speed of 300 mm / / 10 mm, and more preferably 1 to 12 N / 10 mm. When the adhesive force is 0.1 N / 10 mm or more, adhesion of the adhesive layer 20 to the ring frame is improved when the ring frame is adhered to the adhesive layer 20 in the expanding process. In the expanding process, The dicing die-bonding film X can be well maintained. When the adhesive force is 20 N / 10 mm or less, peeling of the dicing die-bonding film X from the ring frame is facilitated when the ring frame is adhered to the adhesive layer 20 in the expanding process. The adhesion to the SUS can be measured using a tensile tester (trade name "Autograph AGS-J" manufactured by Shimadzu Seisakusho Co., Ltd.). The sample piece provided for the test is preferably a test piece having a size of 50 mm wide × 120 mm long.

The adhesive layer 20 preferably has a storage modulus at 23 占 폚 of 100 to 4000 MPa, more preferably 300 to 3000 MPa, and still more preferably 500 to 2000 MPa. When the storage elastic modulus is 100 MPa or more, when the ring frame is adhered to the adhesive layer 20 in the expanding process, peeling of the dicing die-bonding film X from the ring frame is facilitated. When the storage elastic modulus is 4000 MPa or less, adhesion of the adhesive layer 20 to the ring frame is improved when the ring frame is adhered to the adhesive layer 20 in the expanding process. In the expanding process, The die-bonding film X can be well maintained. The storage elastic modulus can be measured using a tensile tester (trade name " Autograph AGS-J ", manufactured by Shimadzu Seisakusho Co., Ltd.). The sample piece provided for the test is preferably a test piece having a size of 50 mm wide × 120 mm long.

The thickness of the adhesive layer 20 (total thickness in the case of the laminate) is not particularly limited, but is, for example, 1 to 200 占 퐉. The upper limit is preferably 100 탆, more preferably 80 탆. The lower limit is preferably 3 占 퐉, more preferably 5 占 퐉.

The outer peripheral end portion 11e of the base material 11 and the outer peripheral end portion 12e of the pressure sensitive adhesive layer 12 in the dicing tape 10 in the in-plane direction D of the dicing die- , And the outer peripheral end 20e of the adhesive layer 20 is within 1000 占 퐉, preferably within 500 占 퐉. That is, the outer peripheral end 20e of the adhesive layer 20 is formed so as to extend in the film surface in-direction D between the inner side of 1000 占 퐉 to 1000 占 퐉 outside the outer peripheral end 11e of the base 11, Preferably between the inner side 500 m and the outer side 500 m, and between the inner side 1000 占 퐉 and the outer side 1000 占 퐉 with respect to the outer peripheral end 12e of the pressure-sensitive adhesive layer 12, preferably between the inner side 500 占 퐉 and the outer side 500 占. In the structure in which the dicing tape 10 or its adhesive layer 12 and the adhesive layer 20 thereon have substantially the same dimensions in the in-plane direction D, In addition to a frame adhesion area.

In the case where the pressure-sensitive adhesive layer 12 of the dicing tape 10 is a radiation-curable pressure-sensitive adhesive layer in the dicing die-bonding film X, The peel force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 after radiation curing is preferably 0.06 to 0.25 N / 20 mm, and more preferably 0.1 to 0.2 N / 20 mm. When the peeling force is 0.06 N / 20 mm or more, adhesion between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer on the dicing tape is secured, and occurrence of lifting from the pressure-sensitive adhesive layer of the semiconductor chip with adhesive layer in the expanding process . When the peeling force is 0.25 N / 20 mm or less, a better pick-up in the pick-up process can be realized. The term "radiation curable pressure sensitive adhesive layer" as used herein means a pressure sensitive adhesive layer formed of the above radiation curable pressure sensitive adhesive, and includes a pressure sensitive adhesive layer having radiation curable properties and a pressure sensitive adhesive layer after radiation curable by the pressure sensitive adhesive layer Finished radiation curing type pressure-sensitive adhesive layer).

The peeling force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 before the radiation curing in the T-type peeling test under the conditions of a temperature of 23 캜 and a peeling speed of 300 mm / min in the dicing die- More preferably 2 N / 20 mm or more, more preferably 3 N / 20 mm or more. When the peeling force is 2 N / 20 mm or more, adhesion between the adhesive layer of the dicing tape and the adhesive layer on the dicing tape is ensured in the case where the expanding process is performed without radiation curing, It is possible to further improve the adhesive layer while further suppressing the occurrence of lifting in the adhesive layer of the semiconductor chip with adhesive layer. The peeling force is, for example, 20 N / 20 mm or less, preferably 10 N / 20 mm or less. The above-mentioned " before radiation curing " means a state in which the pressure-sensitive adhesive layer is not cured by irradiation with radiation, and the case where the pressure-sensitive adhesive layer 12 is not a radiation-curable pressure-

The above T-type peeling test is carried out using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Seisakusho Co., Ltd.). The sample piece provided in the test can be manufactured as follows. First, in the case where the pressure-sensitive adhesive layer 12 before the radiation-curing and radiation-curing of the pressure-sensitive adhesive layer is obtained, ultraviolet rays of 350 mJ / cm 2 are applied to the pressure- And the pressure-sensitive adhesive layer 12 is cured. Then, a reinforcing tape (trade name "BT-315", manufactured by Nitto Denko Kabushiki Kaisha) was bonded to the adhesive layer 20 side of the dicing die-bonding film X, and then a test piece of 50 mm in width × 120 mm in length Cut it out.

The difference between the surface roughness Ra of the pressure-sensitive adhesive layer 12 and the surface roughness Ra of the adhesive layer 20 on the contact surface between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 in the dicing die- The surface roughness Ra of the pressure-sensitive adhesive layer 12 on the contact surface with the adhesive layer 20 - (the surface roughness Ra of the adhesive layer 20 on the contact surface with the pressure-sensitive adhesive layer 12)] is 100 nm or less . When the difference in the surface roughness Ra is 100 nm or less, the adhesion between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer on the dicing tape can be further improved. In the expanding process, It is possible to further suppress the occurrence of peeling, i.e., entanglement. The surface roughness Ra of the pressure-sensitive adhesive layer 12 and the surface roughness Ra of the adhesive layer 20 on the contact surface between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 are, for example, The adhesive layer 12 is peeled from the interface between the pressure sensitive adhesive layer 12 and the adhesive layer 20 so that the surface of the pressure sensitive adhesive layer 12 on the side where the adhesive layer 20 is laminated and the pressure sensitive adhesive layer 12 of the adhesive layer 20 are laminated Can be obtained by measuring the surface roughness Ra with respect to the surface on the side where it was present.

The dicing die-bonding film X may have a separator S as shown in Fig. Specifically, the dicing die-bonding film X may be in the form of a sheet having the separator S, the separator S may be a long phase, a plurality of dicing die-bonding films X may be disposed thereon, Or may be in this form. The separator S is an element for covering and protecting the surface of the adhesive layer 20 of the dicing die-bonding film X. When the dicing die-bonding film X is used, the separator S is peeled from the film. Examples of the separator S include a plastic film or paper surface-coated with a releasing agent such as a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a fluorine-based releasing agent or a long-chain alkyl acrylate-based releasing agent. The thickness of the separator S is, for example, 5 to 200 mu m.

The dicing die-bonding film X, which is one embodiment of the dicing die-bonding film of the present invention, is produced, for example, as follows.

First, as shown in Fig. 3 (a), an adhesive film 20 'is formed on the separator S. The adhesive film 20 'is a long-shaped film to be formed in the adhesive layer 20 described above. In the production of the adhesive film 20 ', first, a composition (adhesive composition) for forming the adhesive layer 20 including a resin, a filler, a curing catalyst, a solvent and the like is prepared. Then, the adhesive composition is coated on the separator to form an adhesive composition layer. Examples of the application method of the adhesive composition include roll coating, screen coating, gravure coating and the like. Subsequently, in this adhesive composition layer, it is solidified by desolvation or curing as necessary. The desolvation is carried out in the range of, for example, a temperature of 70 to 160 DEG C for 1 to 5 minutes. As described above, the adhesive film 20 'can be produced on the separator S.

Next, as shown in Fig. 3 (b), a pressure-sensitive adhesive layer 12 'is laminated on the adhesive film 20'. The pressure-sensitive adhesive layer 12 'is processed and formed in the pressure-sensitive adhesive layer 12 described above. In forming the pressure-sensitive adhesive layer 12 ', first, a composition (pressure-sensitive adhesive composition) for forming a pressure-sensitive adhesive layer including a pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 and a solvent is applied on the adhesive film 20' Thereby forming a pressure-sensitive adhesive composition layer. Examples of the application method of the pressure-sensitive adhesive composition include roll coating, screen coating, gravure coating and the like. Subsequently, in this pressure-sensitive adhesive composition layer, it is solidified by desolvation, curing or the like as necessary. The desolvation is carried out within a range of, for example, a temperature of 80 to 150 DEG C and a time of 0.5 to 5 minutes. The adhesive film 20 'that is formed on the adhesive layer 20 and the pressure-sensitive adhesive layer 12' that is formed on the pressure-sensitive adhesive layer 12 can be formed by such a multilayer coating method.

Next, as shown in Fig. 3 (c), the base material 11 'is pressed and bonded onto the pressure-sensitive adhesive layer 12'. The base material 11 'is processed and formed on the base material 11 described above. The base material 11 'made of resin can be produced by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method and a dry lamination method . The film and substrate 11 'after the film formation are subjected to surface treatment as required. In this step, the bonding temperature is, for example, 30 to 50 占 폚, preferably 35 to 45 占 폚. The bonding pressure (line pressure) is, for example, 0.1 to 20 kgf / cm, preferably 1 to 10 kgf / cm. Thereby, an elongated laminated sheet body having a laminated structure of the separator S, the adhesive film 20 ', the pressure-sensitive adhesive layer 12' and the substrate 11 'is obtained. In the case where the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer as described above, when irradiating the pressure-sensitive adhesive layer 12 'with radiation such as ultraviolet radiation after bonding of the adhesive film 20' 11 ', the pressure sensitive adhesive layer 12' is irradiated with radiation such as ultraviolet rays. The dose is, for example, 50 to 500 mJ / cm2, preferably 100 to 300 mJ / cm2. The irradiation region is, for example, the entirety of a region formed in the pressure-sensitive adhesive layer 12 to be brought into close contact with the adhesive layer 20.

Next, as shown in Fig. 3 (d), the laminated sheet body is processed so as to project the cutting edge from the side of the substrate 11 'to the separator S (see (d ), A cut portion is schematically shown by a thick line). For example, a rotating roll with a cutting edge having a cutting edge for punching accompanied with a roll surface, which is rotatably disposed around an axis perpendicular to the direction F while moving the laminated sheet body in the one direction F at a constant speed Is abutted against the base 11 'side of the laminated sheet body with a predetermined pressing force. Thereby, the dicing tape 10 (the substrate 11, the pressure-sensitive adhesive layer 12) and the adhesive layer 20 are collectively processed and the dicing die-bonding film X is formed on the separator S. Thereafter, as shown in Fig. 3 (e), the material laminated portion around the dicing die-bonding film X is removed from the separator S.

Thus, the dicing die-bonding film X can be produced.

[Method of Manufacturing Semiconductor Device]

By using the dicing die-bonding film of the present invention, a semiconductor device can be manufactured. Specifically, a step of attaching a semiconductor wafer capable of being separated into a divided body of a semiconductor wafer including a plurality of semiconductor chips or a plurality of semiconductor chips onto the adhesive layer side of the dicing die-bonding film of the present invention Quot; A ") and a dicing tape in the dicing die-bonding film of the present invention is expanded under relatively low temperature conditions, and at least the adhesive layer is removed to obtain a semiconductor chip with an adhesive layer (Referred to as " process B ") and a process of expanding the dicing tape under a relatively high temperature condition and widening the interval between the semiconductor chips with the adhesive layer And the step of picking up the semiconductor chip with the adhesive layer (sometimes referred to as " step D "), It is possible to manufacture a device body. 4 to 9 show one embodiment of a semiconductor device manufacturing method using the dicing die-bonding film of the present invention.

A divided body of the semiconductor wafer including the plurality of semiconductor chips used in the step A, or a semiconductor wafer which can be separated into a plurality of semiconductor chips can be obtained as follows. First, as shown in Figs. 4 (a) and 4 (b), a dividing groove 30a is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the side of the first surface Wa of the semiconductor wafer W, and a wiring structure (not shown) necessary for the semiconductor element is already formed on the first surface Wa. Then, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held on the first surface Wa side of the semiconductor wafer W with the semiconductor wafer W held on the wafer processing tape T1 The dividing groove 30a having a predetermined depth is formed by using a rotating blade such as a dicing machine. The dividing groove 30a is a gap for separating the semiconductor wafer W into semiconductor chip units (in Figs. 4 to 6, the dividing groove 30a is schematically shown by a thick line).

Next, as shown in Fig. 4 (c), the joining of the wafer processing tape T2 having the adhesive surface T2a to the first surface Wa side of the semiconductor wafer W and the joining of the wafer processing tape T1 Peeling is performed.

Next, as shown in Fig. 4 (d), in a state in which the semiconductor wafer W is held on the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until the semiconductor wafer W reaches a predetermined thickness (Wafer thinning process). The grinding process can be performed using a grinding machine equipped with a grinding wheel. By this wafer thinning step, a semiconductor wafer 30A that can be separated into a plurality of semiconductor chips 31 is formed in the present embodiment. Specifically, the semiconductor wafer 30A has a portion (connection portion) for connecting a portion to be separated into a plurality of semiconductor chips 31 in the wafer on the second surface Wb side. The distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 mu m, Is 3 to 20 mu m.

(Process A)

In the process A, a semiconductor wafer, which is divided into a plurality of semiconductor chips or a plurality of semiconductor chips, is attached to the adhesive layer 20 side of the dicing die-bonding film X.

5A, the semiconductor wafer 30A held on the wafer processing tape T2 is bonded to the adhesive layer 20 of the dicing die-bonding film X . Thereafter, as shown in Fig. 5B, the wafer processing tape T2 is peeled from the semiconductor wafer 30A. In the case where the pressure-sensitive adhesive layer 12 in the dicing die-bonding film X is a radiation-curing pressure-sensitive adhesive layer, the adhesive layer 20 of the semiconductor wafer 30A is used instead of the above-described radiation irradiation in the production process of the dicing die- The adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the side of the base material 11. [ The dose is, for example, 50 to 500 mJ / cm 2, preferably 100 to 300 mJ / cm 2. The area (irradiation area R shown in FIG. 1) where irradiation with the adhesive layer 12 in the dicing die-bonding film X is performed as a measure for reducing the adhesive force is performed by, for example, applying the adhesive layer 20 in the pressure- Is a region excluding the periphery of the junction region.

(Step B)

In the process B, the dicing tape 10 in the dicing die-bonding film X is expanded under the condition of relatively low temperature, and at least the adhesive layer 20 is cut to obtain a semiconductor chip with an adhesive layer.

In the embodiment of the process B, first, the ring frame 41 is attached on the adhesive layer 20 in the dicing die-bonding film X, and then, as shown in Fig. 6 (a) 30A to the holding tool 42 of the expanding apparatus.

Next, a first expanding process (a cool expansion process) is performed as shown in FIG. 6 (b) under a relatively low temperature condition, and the semiconductor wafer 30A is reorganized into a plurality of semiconductor chips 31 The adhesive layer 20 of the dicing die-bonding film X is cut into the adhesive layer 21 of small pieces to obtain the semiconductor chip 31 with the adhesive layer. In the cooling and exposing process, the hollow cylinder-shaped push-up member 43 provided in the expanding device is lifted while abutting the dicing tape 10 on the lower side of the drawing of the dicing die bonding film X, The dicing tape 10 of the dicing die-bonding film X to which the semiconductor wafer 30A is bonded is stretched so as to stretch in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expanse is performed under the condition that tensile stress is generated in the dicing tape 10 in the range of 15 to 32 MPa, preferably 20 to 32 MPa. The temperature condition in the Cool Expansion process is, for example, 0 deg. C or less, preferably -20 to -5 deg. C, more preferably -15 to -5 deg. C, and more preferably -15 deg. The expand speed (the speed at which the lifting member 43 is lifted) in the cooling expansion process is preferably 0.1 to 100 mm / sec. The amount of expanse in the Cool Expand process is preferably 3 to 16 mm.

In the process B, when a semiconductor wafer 30A that can be separated into a plurality of semiconductor chips is used, cut-off occurs in a portion of the semiconductor wafer 30A that is thin and liable to be split, resulting in fragmentation into the semiconductor chips 31. [ Along with this, in the process B, deformation is suppressed in each region where the semiconductor chips 31 are in close contact with each other in the adhesive layer 20 adhered to the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded On the other hand, a tensile stress generated in the dicing tape 10 acts in a position in the vertical direction in the drawing of the dividing grooves between the semiconductor chips 31 in a state in which such deformation suppressing action does not occur. As a result, portions located in the vertical direction of the dividing grooves between the semiconductor chips 31 in the adhesive layer 20 are cut off. 6 (c), the push-up member 43 is lowered to release the expanded state of the dicing tape 10. As shown in Fig.

(Step C)

In step C, the dicing tape 10 is expanded under a relatively high temperature condition to widen the gap between the semiconductor chips with the adhesive layer.

In the embodiment of the process C, first, the second expand process (normal temperature expansion process) is performed as shown in Fig. 7A under the condition of relatively high temperature, and the semiconductor chip 31 (Distance) between the first and second electrodes. In step C, the hollow cylinder-shaped push-up member 43 provided in the expand apparatus is lifted again, and the dicing tape 10 of the dicing die-bonding film X is expanded. The temperature condition in the second expansion step is, for example, 10 DEG C or more, and preferably 15 to 30 DEG C. [ The expand speed (the speed at which the lifting member 43 is lifted) in the second expanding process is, for example, 0.1 to 10 mm / sec, preferably 0.3 to 1 mm / sec. The expanding amount in the second expanding step is, for example, 3 to 16 mm. The separation distance of the adhesive layer-attached semiconductor chip 31 is extended to such an extent that the semiconductor chip 31 with an adhesive layer can be properly picked up from the dicing tape 10 in the pickup process to be described later. After expanding the separation distance by expanding, the push-up member 43 is lowered to release the expanded state on the dicing tape 10 as shown in Fig. 7 (b). From the viewpoint of suppressing the narrowing distance of the semiconductor chip 31 with the adhesive layer on the dicing tape 10 after releasing the expanded state, It is preferable to heat and shrink a portion of the semiconductor chips 31 located outside the semiconductor chip 31 holding region.

After the step C, a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 10 accompanying the adhesive-layer-attached semiconductor chip 31 using a cleaning liquid such as water may be optionally provided.

(Step D)

In Process D (pick-up process), the separated semiconductor chips with adhesive layers are picked up. In the embodiment of the process D, the semiconductor chip 31 with the adhesive layer is picked up from the dicing tape 10 after the cleaning process as required, as shown in Fig. For example, the pin member 44 of the pick-up mechanism is raised and diced through the dicing tape 10 on the lower side of the figure of the dicing tape 10 with respect to the semiconductor chip 31 with the adhesive layer to be picked up And then adsorbed and held by the adsorption jig 45. In the pick-up process, the pushing-up speed of the pin member 44 is, for example, 1 to 100 mm / second, and the push-up amount of the pin member 44 is, for example, 50 to 3000 탆.

The semiconductor device manufacturing method may include steps other than the steps A to D. For example, in one embodiment, as shown in Fig. 9A, the semiconductor chip 31 with the adhesive layer picked up is adhered temporarily to the adherend 51 via the adhesive layer 21 (Temporary fixing process). Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive force at 25 占 폚 at the time of temporary fixing of the adhesive layer 21 is preferably 0.2 MPa or more and more preferably 0.2 to 10 MPa with respect to the adherend 51. [ The configuration in which the adhesive layer 21 has a shear adhesive strength of 0.2 MPa or more is a method of bonding the adhesive layer 21 to the semiconductor chip 31 or the adherend 51 by ultrasonic vibration or heating in a wire bonding step It is possible to suppress the occurrence of shear deformation on the surface and appropriately conduct the wire bonding. The shear adhesive force at 175 캜 at the time of temporary fixing of the adhesive layer 21 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa with respect to the adherend 51.

Next, as shown in FIG. 9B, a terminal portion (not shown) of an electrode pad (not shown) of the semiconductor chip 31 and an adherend 51 is electrically connected through a bonding wire 52 (Wire bonding process). Wiring between the electrode pad of the semiconductor chip 31 and the terminal portion of the adherend 51 and the bonding wire 52 can be realized by ultrasonic welding accompanied by heating and the adhesive layer 21 is not thermally cured . As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The wire heating temperature in the wire bonding is, for example, 80 to 250 占 폚, preferably 80 to 220 占 폚. Further, the heating time is from several seconds to several minutes.

9 (c), the semiconductor chip 31 is bonded to the semiconductor chip 31 by the sealing resin 53 for protecting the semiconductor chip 31 and the bonding wire 52 on the adherend 51. Next, (Sealing step). In the sealing step, the adhesive layer 21 is thermally cured. In the sealing step, a sealing resin 53 is formed by a transfer molding technique using, for example, a metal mold. As the constituent material of the sealing resin 53, for example, an epoxy resin can be used. In the sealing step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 占 폚, and the heating time is, for example, 60 seconds to several minutes. If the sealing resin 53 does not sufficiently cure in the sealing step, a post-curing step is performed to completely cure the sealing resin 53 after the sealing step. The adhesive layer 21 can be completely thermally cured together with the sealing resin 53 in the post-curing step even when the adhesive layer 21 is not completely thermally cured in the sealing step. In the post-curing process, the heating temperature is, for example, 165 to 185 占 폚, and the heating time is, for example, 0.5 to 8 hours.

In the above embodiment, the semiconductor chip 31 with adhesive layer is temporarily fixed to the adherend 51, and then the wire bonding process is performed without completely thermally curing the adhesive layer 21 as described above. In place of such a configuration, in the method of manufacturing the semiconductor device, even if the semiconductor chip 31 with an adhesive layer is temporarily fixed to the adherend 51, the adhesive layer 21 is thermally cured, and then the wire bonding process is performed do.

In the semiconductor device manufacturing method, as another embodiment, the wafer thinning step shown in Fig. 10 may be performed instead of the wafer thinning step described above with reference to Fig. 4 (d). In the wafer thinning step shown in Fig. 10 after the above-described process is performed with reference to Fig. 4 (c), in a state in which the semiconductor wafer W is held on the wafer processing tape T2, And is thinned by grinding from the two faces Wb to form the semiconductor wafer divided body 30B held on the wafer processing tape T2 including the plurality of semiconductor chips 31. [ In the wafer thinning step, a method (first method) of grinding the wafer until the dividing grooves 30a are exposed on the second surface Wb side may be adopted, and the method of grinding the wafer from the second surface Wb side to the dividing grooves 30a A method of forming a semiconductor wafer divided body 30B by generating a crack between the dividing groove 30a and the second surface Wb by the action of a pressing force against the wafer from the rotating grindstone (Second method) may be employed. According to the adopted method, the depth of the dividing groove 30a formed as described above with reference to Figs. 4A and 4B from the first surface Wa is appropriately determined. In Fig. 10, the dividing grooves 30a through the first method, or the dividing grooves 30a through the second method, and the cracks extending therefrom are schematically shown by bold lines. In the method of manufacturing the semiconductor device, the semiconductor wafer divided body 30B manufactured in this manner as the semiconductor wafer divided body in the step A is used in place of the semiconductor wafer 30A, and referring to FIGS. 5 to 9 Described steps may be performed.

Figs. 11A and 11B show a first expand process (cool process) performed after the step B in the present embodiment, that is, the semiconductor wafer divided body 30B is bonded to the dicing die bonding film X Expansion process). In Step B of the present embodiment, the hollow cylinder-shaped push-up member 43 provided in the expand apparatus is brought into contact with the dicing tape 10 at the lower side of the drawing of the dicing die bonding film X And the dicing tape 10 of the dicing die-bonding film X to which the semiconductor wafer divided body 30B is bonded is stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B. Panda. This expanse is performed under the condition that tensile stress is generated in the dicing tape 10 within a range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa. The temperature condition in the Cool Expansion process is, for example, 0 ° C or lower, preferably -20 ° C to -5 ° C, more preferably -15 ° C to -5 ° C, and further preferably -15 ° C. The expand speed (the speed at which the lifting member 43 is lifted) in the cooling expansion process is preferably 1 to 400 mm / sec. The amount of expanse in the Cool Expansion process is preferably 50 to 200 mm. By this cooling expansion process, the adhesive layer 20 of the dicing die-bonding film X is cut into the adhesive layer 21 of small pieces to obtain the semiconductor chip 31 with the adhesive layer. Specifically, in the Cool Expansion process, the semiconductor chips 31 of the semiconductor wafer divided body 30B are closely contacted with each other in the adhesive layer 20 adhered to the pressure sensitive adhesive layer 12 of the dicing tape 10 to be expanded The deformation of the dicing tape 10 (10) is suppressed in the regions where the dicing tape 10 The tensile stress is generated. As a result, the portion of the adhesive layer 20 located in the vertical direction in the figure of the dividing groove 30a between the semiconductor chips 31 is cut off.

The semiconductor wafer 30C or the semiconductor wafer 30B to be used in the step A may be replaced by a semiconductor wafer 30C manufactured in the following manner .

In this embodiment, as shown in Figs. 12A and 12B, first, a modified region 30b is formed in the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the side of the first surface Wa of the semiconductor wafer W, and a wiring structure (not shown) necessary for the semiconductor element is already formed on the first surface Wa. Then, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T3, and the laser light whose light- The semiconductor wafer W is irradiated from the side opposite to the processing tape T3 along the line to be divided and the modified region 30b is formed in the semiconductor wafer W by ablation by multiphoton absorption. The modified region 30b is a weakening region for separating the semiconductor wafer W into semiconductor chip units. A method of forming a modified region 30b on a line to be divided by laser beam irradiation in a semiconductor wafer is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370, The irradiation conditions are appropriately adjusted within the range of, for example, the following conditions.

≪ Laser irradiation condition >

(A) Laser light

Laser light source Semiconductor laser excitation Nd: YAG laser

wavelength 1064 nm

Laser light spot cross-sectional area 3.14 x 10 < ^-8 >

Rash type Q switch pulse

Repetition frequency 100 kHz or less

Pulse width 1 μs or less

Print 1mJ or less

Laser light quality TEM00

Polarization characteristic Linear polarization

(B) a condenser lens

Magnification 100 times or less

NA 0.55

Transmittance to laser light wavelength 100% or less

(C) The moving speed of the loading table on which the semiconductor substrate is loaded 280 mm / sec or less

Next, as shown in Fig. 12 (c), in a state in which the semiconductor wafer W is held on the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until the semiconductor wafer W reaches a predetermined thickness Whereby a semiconductor wafer 30C that can be separated into a plurality of semiconductor chips 31 is formed (wafer thinning step). In the method of manufacturing the semiconductor device, in the step A, a semiconductor wafer 30C manufactured in such a manner as a semiconductor wafer which can be separated is used in place of the semiconductor wafer 30A, And each process may be performed.

Figs. 13A and 13B are views showing a step B of the present embodiment, that is, a first expanding step after bonding the semiconductor wafer 30C to the dicing die bonding film X Process). In the cooling and exposing process, the hollow cylinder-shaped push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side of the drawing of the dicing die bonding film X, The dicing tape 10 of the dicing die-bonding film X to which the wafer 30C is bonded is stretched so as to stretch in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expanse is performed under the condition that tensile stress is generated in the dicing tape 10 within a range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa. The temperature condition in the Cool Expansion process is, for example, 0 ° C or lower, preferably -20 ° C to -5 ° C, more preferably -15 ° C to -5 ° C, and further preferably -15 ° C. The expand speed (the speed at which the lifting member 43 is lifted) in the cooling expansion process is preferably 1 to 400 mm / sec. The amount of expanse in the Cool Expansion process is preferably 50 to 200 mm. By this cool expansion process, the adhesive layer 20 of the dicing die-bonding film X is cut into the adhesive layer 21 of a small piece, and the semiconductor chip 31 with the adhesive layer is obtained. Specifically, in the cool expansion process, cracks are formed in the weakened modified region 30b of the semiconductor wafer 30C, and the semiconductor chip 31 is fragmented. The semiconductor chips 31 of the semiconductor wafer 30C are brought into close contact with each other in the adhesive layer 20 adhering to the pressure sensitive adhesive layer 12 of the dicing tape 10 to be expanded, The tensile stress generated in the dicing tape 10 is reduced in a state where the deformation is suppressed in each region where the wafer is cracked while the deformation is suppressed in the region where the wafer is cracked, . As a result, portions of the adhesive layer 20 located in the vertical direction in the drawing of cracks between the semiconductor chips 31 are cut off.

Further, in the above-described method for manufacturing a semiconductor device, the dicing die-bonding film X can be used for obtaining a semiconductor chip with an adhesive layer as described above. However, in the case of stacking a plurality of semiconductor chips and performing three- It is also possible to use it for the purpose of obtaining a semiconductor chip with an adhesive layer. A spacer may be interposed between the semiconductor chips 31 in such a three-dimensional mounting with the adhesive layer 21, or may not be interposed with the spacer.

Example

Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to these Examples at all.

Example 1

(Adhesive layer)

Acrylic polymer A ₁ (a copolymer of ethyl acrylate and butyl acrylate, acrylonitrile and glycidyl methacrylate, which is the second acrylic polymer described above, has a weight average molecular weight of 1,200,000, a glass transition temperature of 0 占 폚, an epoxy value of 0.4 (trade name " MEH-8000H ", 23 (trade name " MEH-8000H ", solid at 23 DEG C, manufactured by Meiwa Kasei Kabushiki Kaisha), 54 parts by mass of a phenol resin , And 40 parts by mass of a silica filler (trade name "SO-C2", average particle diameter 0.5 mu m, manufactured by Admatechs Co., Ltd.) were added to methyl ethyl ketone , And the concentration was adjusted so that the viscosity at room temperature became 700 mPa 占 퐏 to obtain an adhesive composition. Subsequently, an adhesive composition was applied onto the silicone release-treated surface of a PET separator (having a thickness of 38 mu m) having a surface subjected to the silicon release treatment to form a coating film. The coating film was subjected to desolvation . Thus, an adhesive layer having a thickness of 10 占 퐉 in Example 1 was formed on a PET separator. The composition of the adhesive layer in Example 1 is shown in Table 1. (In Table 1, the unit of each numerical value showing the composition of the composition is a relative "part by mass" in the composition, ).

(Pressure-sensitive adhesive layer)

(LA), 20 parts by mol of 2-hydroxyethyl acrylate (2HEA) and 20 parts by mol of 2-hydroxyethyl acrylate (2HEA) in a reaction vessel equipped with a stirrer, a thermometer, A mixture containing 0.2 part by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent in an amount of 100 parts by mass was stirred at 60 deg. C for 10 hours under a nitrogen atmosphere (polymerization reaction). Thus, a polymer solution containing the acrylic polymer P ₁ was obtained. With respect to the acrylic polymer P ₁ in the polymer solution, the weight average molecular weight (Mw) was 46,000, the glass transition temperature was 9.5 ° C, and the molar ratio of the constituent unit derived from LA to the 2HEA-based constituent unit was 5. Then, a mixture containing the polymer solution containing the acrylic polymer P ₁ , 2-methacryloyloxyethyl isocyanate (MOI) and dibutyltin dilaurate as an addition reaction catalyst was stirred at room temperature for 48 hours, Followed by stirring in an air atmosphere (addition reaction). The art for the reaction solution, the amount of the MOI is, the LA is a 16 molar parts with respect to the lauryl acrylate to 100 molar parts, and the molar ratio of such MOI amount of the structural units or the total amount of the hydroxyl group of 2HEA derived from the acrylic polymer P ₁ is 0.8 to be. Further, in the reaction solution, the blending amount of dibutyltin dilaurate is 0.01 part by mass based on 100 parts by mass of the acrylic polymer P ₁ . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in its side chain (the aforementioned first acrylic polymer containing a constituent unit derived from an isocyanate compound having an unsaturated functional group) was obtained. Then, 1 part by mass of a polyisocyanate compound (trade name: Coronate L, manufactured by Tosoh Corporation) and 2 parts by mass of a photopolymerization initiator (trade name: Irgacure 127 (trade name)) were added to the polymer solution in an amount of 1 part by mass based on 100 parts by mass of the acrylic polymer P ₂ , Manufactured by BASF Co., Ltd.) was added and mixed. Toluene was added to the mixture so that the viscosity of the mixture at room temperature became 500 mPa 占 and diluted to obtain a pressure-sensitive adhesive composition. Subsequently, a pressure-sensitive adhesive composition was applied to the above-mentioned adhesive layer formed on the PET separator to form a coating film. The coating film was subjected to desolvation at 130 ° C for 2 minutes, and a pressure- . Subsequently, a substrate made of ethylene-vinyl acetate copolymer (EVA) (trade name: "RB-0104", thickness: 130 μm, manufactured by Kurashiki Boshiki Co., Ltd.) was applied to the exposed surface of the pressure-sensitive adhesive layer at room temperature Respectively. Then, a punching process was performed in which the cutting edge was pushed in from the EVA base material side to the separator. Thus, a disc-shaped dicing die-bonding film having a laminate structure of EVA base material / pressure-sensitive adhesive layer / adhesive layer and having a diameter of 370 mm was formed on the separator. Then, the pressure-sensitive adhesive layer in the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In ultraviolet irradiation, a high pressure mercury lamp was used and the irradiated cumulative light amount was set to 350 mJ / cm 2. Thus, a dicing die-bonding film of Example 1 having a laminated structure including a dicing tape (EVA base / pressure-sensitive adhesive layer) and an adhesive layer was produced.

Examples 2 and 3

Except that the blending amount of MOI in the formation of the pressure-sensitive adhesive layer was changed to 12 moles (Example 2) instead of 16 moles (Example 2) or 8 moles (Example 3), and in the same manner as in the dicing die- 3 dicing die-bonding films were prepared.

Example 4

(Pressure-sensitive adhesive layer)

Ethylhexyl acrylate (2EHA), 20 parts by mol of 2-hydroxyethyl acrylate (2HEA), 2 parts by mass of 2-ethylhexyl acrylate (2EHA) in a reaction vessel equipped with a stirrer, a thermometer, 0.2 part by mass of benzoyl peroxide as a polymerization initiator and 100 parts by mass of toluene as a polymerization solvent with respect to 100 parts by mass of the monomer component were stirred at 60 deg. C for 10 hours under a nitrogen atmosphere (polymerization reaction). Thus, a polymer solution containing the acrylic polymer P ₃ was obtained. With respect to the acrylic polymer P ₃ in the polymer solution, the weight average molecular weight (Mw) was 400,000, the glass transition temperature was 9.5 ° C, and the molar ratio of the constituent units derived from 2EHA to the 2HEA- Then, a mixture of the polymer solution containing the acrylic polymer P ₃ , 2-methacryloyloxyethyl isocyanate (MOI) and dibutyltin dilaurate as an addition reaction catalyst was stirred at room temperature for 48 hours, Followed by stirring in an air atmosphere (addition reaction). In the reaction solution, the blending amount of MOI is 16 mol parts relative to 100 mol of the 2-ethylhexyl acrylate, and the molar ratio of the constituent unit derived from 2HEA in the acrylic polymer P ₃ or the amount of the MOI to the total amount of the hydroxyl groups Is 0.8. Further, in the reaction solution, the blending amount of dibutyltin dilaurate is 0.01 part by mass based on 100 parts by mass of the acrylic polymer P ₃ . By this addition reaction, a polymer solution containing an acrylic polymer P ₄ having a methacrylate group in its side chain (an acrylic polymer containing a constituent unit derived from an isocyanate compound having an unsaturated functional group) was obtained. Subsequently, 1 part by mass of a polyisocyanate compound (trade name: Coronate L, manufactured by Tosoh Corporation) and 2 parts by mass of a photopolymerization initiator (trade name: Irgacure 127 (trade name)) were added to the polymer solution in an amount of 1 part by mass based on 100 parts by mass of the acrylic polymer P ₄ , Manufactured by BASF Co., Ltd.) was added and mixed. Toluene was added to the mixture so that the viscosity of the mixture at room temperature became 500 mPa 占 and diluted to obtain a pressure-sensitive adhesive composition. Then, a dicing die-bonding film of Example 4 was prepared in the same manner as in the dicing die-bonding film of Example 1, except that the pressure-sensitive adhesive composition was used as the pressure-sensitive adhesive composition.

Example 5

(Pressure-sensitive adhesive layer)

The pressure-sensitive adhesive composition prepared in Example 4 was applied by using an applicator on the silicone release-treated surface of a PET separator (having a thickness of 38 mu m) having a surface subjected to silicone release treatment to form a coating film. The solvent was desolvated for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 10 mu m on the PET separator. Subsequently, a substrate made of ethylene-vinyl acetate copolymer (EVA) (trade name: "RB-0104", thickness: 130 μm, manufactured by Kurashiki Boshiki Co., Ltd.) was applied to the exposed surface of the pressure-sensitive adhesive layer at room temperature Respectively. Thus, a dicing tape having a laminated structure of an EVA base material / pressure-sensitive adhesive layer was produced.

(Adhesive layer)

The PET separator was peeled from the dicing tape, and the adhesive layer of the PET separator with the adhesive layer prepared in Example 1 was bonded to the exposed pressure-sensitive adhesive layer. In the bonding, the center of the dicing tape and the center of the adhesive layer were aligned. A hand roller was used for bonding. Then, a punching process was performed in which the cutting edge was pushed in from the EVA base material side to the separator. Thus, a disc-shaped dicing die-bonding film having a laminate structure of EVA base material / pressure-sensitive adhesive layer / adhesive layer and having a diameter of 370 mm was formed on the separator. Then, the pressure-sensitive adhesive layer in the dicing tape was irradiated with ultraviolet rays from the EVA base material side. In ultraviolet irradiation, a high pressure mercury lamp was used and the irradiated cumulative light amount was set to 350 mJ / cm 2. Thus, a dicing die-bonding film of Example 5 having a laminated structure including a dicing tape (EVA base / pressure-sensitive adhesive layer) and an adhesive layer was produced.

 Comparative Example 1

A dicing die-bonding film of Comparative Example 1 was produced in the same manner as in the dicing die-bonding film of Example 4 except that the amount of MOI was changed to 20 parts by mole instead of 16 parts by mole in forming the pressure-sensitive adhesive layer.

<Evaluation>

The following evaluations were performed on the dicing die-bonding films obtained in Examples and Comparative Examples. The results are shown in Table 1.

(Elastic modulus by nanoindentation method)

 On each dicing die-bonding film obtained in each of Examples and Comparative Examples, the adhesive layer was peeled off from the pressure-sensitive adhesive layer, and a nano indenter (trade name: TriboIndenter, manufactured by HYSITRON Inc.) was applied to the peeling surface of the pressure- The nanoindentation measurement on the surface of the pressure-sensitive adhesive layer was carried out under the following conditions. Table 1 shows the obtained elastic modulus.

Use indenter: Berkovich (triangular shape)

Measuring method: Single indentation measurement

Measuring temperature: 23 ° C

Frequency: 100㎐

Setting of indentation depth: 500 nm

Load: 1 mN

Load speed: 0.1 mN / s

Unloading speed: 0.1mN / s

Holding time: 1s

(Surface roughness)

With respect to each of the dicing die-bonding films obtained in each of Examples and Comparative Examples, the adhesive layer was peeled off from the pressure-sensitive adhesive layer, and the surface roughness Ra of each of the pressure-sensitive adhesive layer and the peeling surface of the adhesive layer was measured. The surface roughness was measured using a confocal laser microscope (trade name "OPTELICS H300", manufactured by Laser Tech Co., Ltd.). Table 1 shows the obtained surface roughness Ra and the difference therebetween.

(T-type peeling test after ultraviolet curing)

With respect to each of the dicing die-bonding films obtained in each of Examples and Comparative Examples, the peeling force between the pressure-sensitive adhesive layer and the adhesive layer was examined as follows. First, test pieces were prepared from each dicing die-bonding film. Specifically, a reinforcing tape (trade name &quot; BT-315 &quot;, manufactured by Nitto Denko Kabushiki Kaisha) was bonded to the adhesive layer side of the dicing die-bonding film and a dicing die- Test pieces having a size of 120 mm in length were cut out. Then, the T-shaped peel test was carried out on the test piece by using a tensile tester (trade name "Autograph AGS-J" manufactured by Shimadzu Seisakusho Co., Ltd.) and the peel force (N / 20 mm) was measured. In this measurement, the temperature condition was set at 23 DEG C and the peeling speed was set at 300 mm / min. The measurement results are shown in Table 1.

(Execution of expansion process and pickup process)

Each of the dicing die-bonding films obtained in the examples and the comparative examples was used for the following bonding process, the first expand process (cool expansion process) for separation, the second expansion process for separation Panning) and a pick-up process.

In the bonding step, the semiconductor wafer divided body held by a wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko KK) is bonded to the adhesive layer of the dicing die bonding film, The working tape was peeled off. In the bonding, a laminator was used, the bonding speed was 10 mm / sec, the temperature condition was 60 ° C, and the pressure condition was 0.15 MPa. The semiconductor wafer divided body is prepared and prepared as follows. First, a bare wafer (12 inches in diameter, 780 탆 thick, manufactured by Tokyo Kako K.K.) in a state held with a ring frame on a wafer processing tape (trade name "V12S-R2-P", manufactured by Nitto Denko Corporation) (Width: 25 mu m, depth: 50 mu m, one section 6 (thickness: 25 mu m)) was formed from the side of one side thereof by a rotating blade using a dicing machine (trade name &quot; DFD6260 &quot;, manufactured by Disco Co., Ltd.) Mm &lt; / RTI &gt; x 12 mm) was formed. Subsequently, a wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko K.K.) was bonded to the dividing groove forming surface, and the above wafer processing tape (trade name "V12S-R2-P") was peeled from the wafer. Thereafter, by using a back grinding machine (trade name: DGP8760, manufactured by Disco Co., Ltd.), the wafer was grinded from the side of the other side of the wafer And then mirror-finished with respect to the grinding surface was carried out by using the dry-polishing method using the apparatus. As described above, the semiconductor wafer divided body (in a state held on the wafer processing tape) was formed. This semiconductor wafer divided body includes a plurality of semiconductor chips (6 mm x 12 mm).

The Cool Expansion process was carried out in the Cool Expand Unit using a Die Separating Device (trade name: Dye Separator DDS3200, manufactured by Disco Co., Ltd.). Specifically, first, a 12-inch-diameter SUS ring frame (having a diameter of 12 inches) was attached to the frame adhesion area (around the work adhesion area) of the adhesive layer in the above-described dicing die- Manufactured by Kaisha Disco Co., Ltd.) was attached at room temperature. Subsequently, the dicing die-bonding film was set in the apparatus, and a dicing tape of a dicing die-bonding film accompanied by a semiconductor wafer divider was expanded in a cool expand unit of the apparatus. In this cooling expansion process, the temperature is -15 占 폚, the expanding speed is 100 mm / sec, and the expanding amount is 7 mm.

The room temperature expanding process was performed in a room temperature expanding unit using a die separating apparatus (trade name &quot; Dye separator DDS3200 &quot;, manufactured by Disco Corporation). More specifically, the dicing tape of the dicing die-bonding film accompanied by the above-described semiconductor wafer divided body subjected to the Cool Expansion process was expanded in the room temperature expanding unit of the above apparatus. In this room-temperature expanding step, the temperature is 23 占 폚, the expanding speed is 1 mm / sec, and the expanding amount is 10 mm. Thereafter, the dicing die-bonding film passed through the room temperature expander was subjected to heat shrink treatment. The treatment temperature is 200 占 폚, and the treatment time is 20 seconds.

In the pick-up process, an attempt was made to pick up a semiconductor chip with an adhesive layer separated on a dicing tape by using a device having a pick-up mechanism (trade name: "Die Bonder SPA-300" manufactured by Shin-Kawa K.K.). With respect to this pickup, the push-up speed by the pin member is 1 mm / sec, the push-up amount is 2000 mu m, and the pick-up evaluation number is 5. [

In the above-described process in which the respective dicing die-bonding films obtained in the examples and the comparative examples were used, in the case of the cooling expansion process, in the case where the lifting area of the semiconductor chip with adhesive layer from the dicing tape is 5% (△) that the floor area was greater than 5% and less than 40%. With respect to the pick-up process, it is evaluated that the pick-up property is good when all the semiconductor chips with five adhesive layers can be picked up from the dicing tape, and picking up is possible when 1 to 4 pieces can be picked up (?), And it was evaluated that the pick-up property was bad (x) when one piece could not be picked up. The evaluation results are shown in Table 1.

According to the dicing die-bonding films of Examples 1 to 4, it is possible not only to smoothly peel off the adhesive layer without causing lifting of the semiconductor chip with an adhesive layer from the dicing tape in the Cool Expansion process, It was possible to appropriately pick up the semiconductor chip with adhesive layer in the pickup process.

1: Dicing die-bonding film
10: Dicing tape
11: substrate
11e: outer peripheral end
12: pressure-sensitive adhesive layer
12e: outer peripheral end
20, 21: adhesive layer
20e: outer peripheral end
W, 30A, and 30C: semiconductor wafers
30B: Semiconductor wafer parted body
30a: Split groove
30b: modified region
31: Semiconductor chip

Claims (10)

A dicing tape having a laminated structure including a substrate and a pressure-sensitive adhesive layer;
And an adhesive layer in close contact with the pressure-sensitive adhesive layer in the dicing tape so as to be peelable,
Wherein the pressure-sensitive adhesive layer has a modulus of elasticity of 0.1 to 20 MPa at a temperature of 23 DEG C and a frequency of 100 Hz at 500 nm by nanoindentation. The method according to claim 1,
Wherein the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer, and the peeling force between the pressure-sensitive adhesive layer and the adhesive layer after the radiation curing in the T-type peeling test under the conditions of a temperature of 23 캜 and a peeling rate of 300 mm / min is 0.06 to 0.25 N / 20 mm, a dicing die-bonding film. 3. The method according to claim 1 or 2,
Wherein the peel strength between the pressure-sensitive adhesive layer and the adhesive layer before the radiation curing is 2 N / 20 mm or more in a T-type peel test under the conditions of a temperature of 23 캜 and a peeling speed of 300 mm / min. 3. The method according to claim 1 or 2,
Wherein the difference between the surface roughness Ra of the surface of the pressure-sensitive adhesive layer and the surface roughness Ra of the surface of the adhesive layer at a contact surface between the pressure-sensitive adhesive layer and the adhesive layer is 100 nm or less. 3. The method according to claim 1 or 2,
Wherein the pressure-sensitive adhesive layer comprises a first acrylic polymer containing a constituent unit derived from a (meth) acrylate having an alkyl group having 10 or more carbon atoms and a constituent unit derived from 2-hydroxyethyl (meth) acrylate, film. 6. The method of claim 5,
(Meth) acrylate having a molar ratio of the constitutional unit derived from (meth) acrylate having an alkyl group of at least 10 carbon atoms to the constitutional unit derived from 2-hydroxyethyl (meth) acrylate in the first acrylic polymer is 1 to 40, Singe die bond film. The method according to claim 5 or 6,
Wherein the first acrylic polymer comprises a constitutional unit derived from an isocyanate compound containing an unsaturated functional group and the constitutional unit derived from an unsaturated functional group-containing isocyanate compound in the first acrylic polymer is derived from a 2-hydroxyethyl (meth) Wherein the molar ratio to the constituent units of the dicing die-bonding film is from 0.1 to 2. 3. The method according to claim 1 or 2,
Wherein the adhesive layer has an adhesive force to SUS of 0.1 to 20 N / 10 mm at a temperature of 23 캜, a peeling speed of 300 mm / min, and an angle of 180 캜. 3. The method according to claim 1 or 2,
Wherein the adhesive layer has a storage elastic modulus at 23 DEG C of 100 to 4000 MPa. 3. The method according to claim 1 or 2,
Wherein the outer peripheral end of the adhesive layer is at a distance of not more than 1000 占 퐉 from the outer peripheral end of the pressure-sensitive adhesive layer in an in-plane direction of the film.

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