KR20180116754A - Dicing die bond film - Google Patents

Abstract

A dicing die-bonding film suitable for realizing a good adhesive force to a frame member such as a ring frame while securing the cutting property in the expanding step in the adhesive layer. The dicing die-bonding film X of the present invention comprises a dicing tape 10 and an adhesive layer 20. [ The dicing tape 10 has a laminated structure including a base material 11 and a pressure-sensitive adhesive layer 12. The adhesive layer 20 is adhered to the pressure-sensitive adhesive layer 12 in a peelable manner. The adhesive layer 20 was formed on the adhesive layer sample having a width of 4 mm at an initial chuck distance of 10 mm, a frequency of 10 Hz, a dynamic strain of +/- 0.5 占 퐉 and a temperature raising rate of 5 占 폚 / The tensile storage modulus is 1000 to 4000 MPa, and the tensile storage modulus at 23 DEG C measured under the above conditions is 10 to 240 MPa.

Description

DICING DIE BOND FILM [0002]

The present invention relates to a dicing die-bonding film which can be used in the process of manufacturing a semiconductor device.

In the manufacturing process of a semiconductor device, a dicing die-bonding film may be used to obtain a semiconductor chip accompanied by an adhesive film of a size equivalent to a die bonding chip, that is, a semiconductor chip with an adhesive layer for die bonding. The dicing die-bonding film has a size corresponding to that of a semiconductor wafer to be processed and has a dicing tape composed of, for example, a base material and a pressure-sensitive adhesive layer, and a die-bonding film (adhesive layer) adhered to the pressure- .

As a method of obtaining a semiconductor chip with an adhesive layer using a dicing die-bonding film, there is known a method of exposing a dicing tape in a dicing die-bonding film to a step of cutting the die-bonding film. In this method, first, a semiconductor wafer is bonded onto a die-bonding film of a dicing die-bonding film. This semiconductor wafer is processed, for example, so that it can be separated into a plurality of semiconductor chips after being cut together with the die bond film. Then, an expanding device is used to cut the die-bonding film so that a plurality of pieces of adhesive film each in close contact with the semiconductor chip are generated from the die-bonding film on the dicing tape, The tape is expanded. In this expanding step, a cutting edge is generated even in a die-bonding film-like semiconductor wafer at a position corresponding to a cut edge portion in the die-bonding film, and the semiconductor wafer is diced onto the dicing die- It is reorganized. Then, in order to widen the separation distance with respect to the plurality of adhesive layer-attached semiconductor chips on the dicing tape, the expanding process is performed again. Then, after the cleaning process, for example, each semiconductor chip is pushed up by the pin member of the pick-up mechanism from the lower side of the dicing tape together with the die-bonding film of the size corresponding to the chip adhering thereto, Is picked up above. In this manner, a semiconductor chip carrying a die-bonding film, that is, an adhesive layer is obtained. The semiconductor chip with the adhesive layer is fixed to an adherend such as a mounting substrate by die bonding through the adhesive layer. For example, a technique relating to a dicing die-bonding film used as described above is described in, for example, Patent Documents 1 to 3 below.

Japanese Patent Laid-Open No. 2007-2173 Japanese Patent Application Laid-Open No. 2010-177401 Japanese Patent Application Laid-Open No. 2012-23161

Fig. 14 is a schematic cross-sectional view of a conventional dicing die-bonding film Y. Fig. The dicing die-bonding film Y is composed of a dicing tape 60 and a die-bonding film 70. The dicing tape 60 has a laminated structure of a base material 61 and a pressure-sensitive adhesive layer 62 exhibiting adhesive force. The die-bonding film 70 is in close contact with the pressure-sensitive adhesive layer 62 due to the adhesive force of the pressure-sensitive adhesive layer 62. Such a dicing die-bonding film Y has a disk shape corresponding to the object to be processed or the semiconductor wafer to be processed in the manufacturing process of the semiconductor device, and can be used in the above-described expanding process. The semiconductor wafer 81 is bonded to the die bond film 70 and the ring frame 82 is adhered to the pressure sensitive adhesive layer 62 as shown in Fig. The process is carried out. The semiconductor wafer 81 is processed, for example, into a plurality of semiconductor chips so as to be separable.

The ring frame 82 is a frame member that is mechanically abutted against the dicing die-bonding film Y by a transport mechanism such as a transport arm provided in the expanding apparatus. The conventional dicing die-bonding film Y is designed such that the ring frame 82 can be fixed to the film by the adhesive force of the adhesive layer 62 of the dicing tape 60. That is, the conventional dicing die-bonding film Y has a design in which the ring frame adhesion area is ensured around the die-bonding film 70 in the pressure-sensitive adhesive layer 62 of the dicing tape 60. In such a design, the distance between the outer peripheral end portion 62e of the pressure-sensitive adhesive layer 62 and the outer peripheral end portion 70e of the die-bonding film 70 in the in-plane direction of the film is about 10 to 30 mm.

The present invention has been devised on the basis of the above circumstances and its object is to provide an adhesive layer which is suitable for realizing a good adhesive force to a frame member such as a ring frame while securing the cutting property in the expanding process, And a dicing die-bonding film.

The dicing die-bonding film provided by the present invention comprises a dicing tape and an adhesive layer. The dicing tape has a laminated structure including a substrate and a pressure-sensitive adhesive layer. The adhesive layer is adhered to the pressure-sensitive adhesive layer of the dicing tape in a peelable manner. The adhesive layer was formed on the adhesive layer sample having a width of 4 mm at an initial chuck distance of 10 mm, a frequency of 10 Hz, a dynamic strain of 占 .5 占 퐉, and a temperature rise rate of 5 占 폚 / min (First tensile storage modulus) at 1000 to 4000 MPa, preferably 1200 to 3900 MPa, and more preferably 1500 to 3800 MPa. In addition, the adhesive layer has a tensile storage modulus (second tensile storage modulus) of 10 to 240 MPa at 23 DEG C measured under the tensile storage modulus measurement conditions of the adhesive layer sample piece having a width of 4 mm, preferably 20 To 200 MPa, and more preferably from 40 to 150 MPa. The dicing die-bonding film having such a structure can be used for obtaining a semiconductor chip with an adhesive layer in the process of manufacturing a semiconductor device.

In the manufacturing process of the semiconductor device, as described above, the expanding process using the dicing die-bonding film, that is, the expanding process for the cutting process, may be carried out to obtain the semiconductor chip with adhesive layer In the bar exposing process, the work such as a semiconductor wafer and the frame member such as a ring frame are held together on the dicing die bond film, so that the die bond film as the adhesive layer can be removed by the expanding of the dicing tape Is required. As described above, the adhesive layer of the dicing die-bonding film has a first tensile storage elastic modulus at -15 캜 of 1000 to 4000 MPa, preferably 1200 to 3900 MPa, and more preferably 1500 to 3800 MPa. Such a constitution is suitable for disposing the adhesive layer in the expanding process carried out at a temperature of -15 캜 which is lower than room temperature and at a temperature close to -15 캜, It is suitable for realizing adhesive force. In addition, the adhesive layer of the dicing die-bonding film of the present invention has a second tensile storage elastic modulus at 23 ° C of 10 to 240 MPa, preferably 20 to 200 MPa, and more preferably 40 to 150 MPa, as described above. Such a configuration is suitable for realizing a good adhesive force to a frame member such as a ring frame before and after the expanding process, for example, in an adhesive layer at room temperature. As described above, the dicing die-bonding film of the present invention is suitable for realizing a good adhesive force to the frame member while securing the cutting property in the expanding step in the adhesive layer.

Such a dicing die-bonding film is characterized in that the dicing tape or its adhesive layer and the adhesive layer thereon are substantially identical to each other in the in-plane direction of the film so as to include a frame- It is possible to design with dimensions. For example, it is possible to employ a design in which the outer peripheral end of the adhesive layer is located at a distance of not more than 1000 占 from the outer peripheral end of each of the substrate of the dicing tape and the pressure-sensitive adhesive layer in the in-plane direction of the dicing die- . Such a dicing die-bonding film is characterized in that the processing for forming one dicing tape having a laminated structure of the substrate and the pressure-sensitive adhesive layer and the processing for forming one adhesive layer are performed collectively by a process such as punching Ideally suited for implementation.

In the manufacturing process of the above-described conventional dicing die-bonding film Y, a processing step (first processing step) for forming the dicing tape 60 having a predetermined size and shape, a die having a predetermined size and shape A processing step (second processing step) for forming the bond film 70 is required as a separate step. In the first processing step, for example, a laminated sheet having a laminated structure of a predetermined separator, a base layer to be formed of the base material 61, and a pressure-sensitive adhesive layer to be formed of the pressure-sensitive adhesive layer 62, Processing is carried out for the sieve body from the side of the substrate layer to the separator. Thereby, a dicing tape 60 having a laminated structure of the pressure-sensitive adhesive layer 62 on the separator and the base material 61 is formed on the separator. In the second processing step, for example, a laminated sheet body having a laminated structure of a predetermined separator and an adhesive layer to be formed on the die-bonding film 70 is provided with a cutting edge from the side of the adhesive layer to the separator So that the work is carried out. Thus, the die-bonding film 70 is formed on the separator. The dicing tape 60 and the die bond film 70 formed in such a separate process are then aligned and bonded. 16 shows a conventional dicing die-bonding film Y carrying a separator 83 covering the surface of the die-bonding film 70 and the surface of the pressure-sensitive adhesive layer 62. Fig.

On the other hand, the dicing die-bonding film of the present invention in the case where the dicing tape or the pressure-sensitive adhesive layer and the adhesive layer thereon have substantially the same design dimension in the in-plane direction of the film, And a process for forming one adhesive layer are carried out collectively by a process such as a single punching process. Such a dicing die-bonding film is suitable for realizing a good adhesive force to a frame member while securing the cutting property in the expanding step in the adhesive layer, Viewpoints and the like.

The adhesive layer of the dicing die-bonding film of the present invention preferably has a thickness of at least 1 N / 10 mm, more preferably at least 1 N / 10 mm, more preferably at least 10 N / 10 mm, Preferably 1.5 N / 10 mm or more, and more preferably 2 N / 10 mm or more. The adhesive layer exhibits a 180 deg. Peel adhesion force of, for example, 100 N / 10 mm or less, preferably 50 N / 10 mm or less, on the SUS plane in the peeling test under the same conditions. This constitution relating to the adhesive force is suitable for ensuring the retention of the frame member by the present dicing die-bonding film at a temperature of -15 캜, which is lower than the room temperature, and its vicinity.

The adhesive layer of the present dicing die-bonding film is preferably subjected to a peeling test at a temperature of 23 DEG C, a peeling angle of 180 DEG and a tensile rate of 300 mm / min, preferably 0.3 N / Preferably not less than 0.4 N / 10 mm, more preferably not less than 0.5 N / 10 mm. The adhesive layer exhibits a 180 deg. Peel adhesion force of 20 N / 10 mm or less, preferably 10 N / 10 mm or less, on the SUS plane in the peeling test under the same conditions. This constitution regarding the adhesive force is suitable for ensuring the retention of the frame member by the present dicing die-bonding film at a temperature of 23 캜 and its vicinity.

The substrate of the present dicing die-bonding film preferably includes an ethylene-vinyl acetate copolymer. Such a configuration is suitable for securing good heat shrinkability in the base material 11 and maintaining the chip separation distance realized in the spacing expansion step using the partial heat shrinkage of the dicing tape or the substrate.

The adhesive layer of the present dicing die-bonding film preferably includes a polymer having a glass transition temperature of -10 to 10 占 폚. Such a configuration is suitable for ensuring the adhesiveness of the adhesive layer to an object to be processed such as a wafer. Such a configuration is suitable for achieving both adhesion at the room temperature and the temperature near the ring frame of the adhesive layer and prevention of residue at the time of peeling.

The adhesive layer of the present dicing die-bonding film preferably contains a filler in a proportion of 30 mass% or less, more preferably 25 mass% or less. Such a constitution is suitable for securing the adhesive property of the adhesive layer to the ring frame in the expanding step which is carried out at a low temperature, for example.

The adhesive layer of the present dicing die-bonding film preferably contains a high molecular weight component in a proportion of 50 to 100 mass%, more preferably 50 to 80 mass%. The high molecular weight component is a component having a weight average molecular weight of 10,000 or more. Such a configuration is suitable for achieving both adhesion at a room temperature and a temperature near the ring frame, and prevention of residue at the time of peeling.

The adhesive layer of the present dicing die-bonding film preferably contains a liquid resin in a proportion of 1 to 10 mass%, more preferably 1 to 5 mass%. Such a configuration is suitable for achieving both adhesion at a room temperature and a temperature near the ring frame, and prevention of residue at the time of peeling.

1 is a schematic cross-sectional view of a dicing die-bonding film according to an embodiment of the present invention.
Fig. 2 shows an example in which the dicing die-bonding film shown in Fig. 1 is accompanied by a separator.
Fig. 3 shows an example of a manufacturing method of the dicing die-bonding film shown in Fig.
Fig. 4 shows a part of the steps in the semiconductor device manufacturing method in which the dicing die-bonding film shown in Fig. 1 is used.
Fig. 5 shows a subsequent process of the process shown in Fig.
Fig. 6 shows a subsequent process of the process shown in Fig.
Fig. 7 shows a subsequent process of the process shown in Fig.
Fig. 8 shows a subsequent process of the process shown in Fig.
Fig. 9 shows a subsequent process of the process shown in Fig.
Fig. 10 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in Fig. 1 is used.
Fig. 11 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in Fig. 1 is used.
Fig. 12 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in Fig. 1 is used.
Fig. 13 shows a part of steps in a modification of the semiconductor device manufacturing method in which the dicing die-bonding film shown in Fig. 1 is used.
14 is a schematic cross-sectional view of a conventional dicing die-bonding film.
Fig. 15 shows a use form of the dicing die-bonding film shown in Fig.
Fig. 16 shows one form of supply of the dicing die-bonding film shown in Fig.

1 is a cross-sectional schematic diagram of a dicing die-bonding film X according to an embodiment of the present invention. The dicing die-bonding film X has a laminated structure including a dicing tape 10 and an adhesive layer 20. The dicing tape 10 has a laminated structure including a base material 11 and a pressure-sensitive adhesive layer 12. The pressure-sensitive adhesive layer (12) has a pressure-sensitive adhesive surface (12a) on the side of the adhesive layer (20). The adhesive layer 20 includes a work adhesion area and a frame adhesion area and also adheres to the pressure sensitive adhesive layer 12 of the dicing tape 10 or its adhesive face 12a in a peelable manner. The dicing die-bonding film X can be used in, for example, a later-described expansion process in the process of obtaining a semiconductor chip with an adhesive layer in the production of a semiconductor device. The dicing die-bonding film X has a disk shape corresponding to the semiconductor wafer to be processed in the manufacturing process of the semiconductor device and has a diameter within a range of, for example, 345 to 380 mm (Corresponding to an 8-inch wafer), within a range of 195 to 230 mm (corresponding to a 6-inch wafer), or within a range of 495 to 530 mm (corresponding to an 18-inch wafer) have.

The base material 11 of the dicing tape 10 is an element which functions as a support in the dicing tape 10 to the dicing die-bonding film X. [ As the substrate 11, for example, a plastic substrate (particularly, a plastic film) can be suitably used. Examples of the constituent material of the plastic substrate include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, Polyamide, polyphenyl sulfide, aramid, fluororesin, cellulose resin and silicone resin. Examples of the polyolefin include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymerized polypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene- (Meth) acrylic acid ester copolymer, an ethylene-butene copolymer, and an ethylene-hexene copolymer can be cited as examples of the copolymer of the present invention. Examples of the polyester include polyethylene terephthalate (PET), polyethylene naphthalate and polybutylene terephthalate (PBT). The substrate 11 may be composed of one kind of material or two or more kinds of materials. The base material 11 may have a single-layer structure or a multi-layer structure. From the viewpoint of ensuring good heat shrinkability in the base material 11 and maintaining the chip separation distance realized in the later-described expanding process by a partial thermal shrinkage of the dicing tape 10 to the base material 11, (11) preferably contains an ethylene-vinyl acetate copolymer as a main component. The main component of the base material 11 is a component that occupies the largest mass proportion among the constituent components. When the base material 11 is made of a plastic film, it may be a non-stretched film, a monoaxially stretched film, or a biaxially stretched film. When the pressure-sensitive adhesive layer 12 on the base material 11 is ultraviolet curable as described later, the base material 11 preferably has ultraviolet transmittance.

When the dicing tape 10 to the substrate 11 are shrunk by, for example, partial heating at the time of using the dicing die-bonding film X, the substrate 11 preferably has heat shrinkability. When the substrate 11 is made of a plastic film, it is preferable that the substrate 11 is a biaxially stretched film in order to achieve isotropic heat shrinkability with respect to the dicing tape 10 to the substrate 11. [ The dicing tape 10 to the substrate 11 preferably have a heat shrinkage ratio of 2 to 30%, more preferably 2 to 25% by a heat treatment test performed under the conditions of a heating temperature of 100 占 폚 and a heat treatment time of 60 seconds %, More preferably 3 to 20%, and still more preferably 5 to 20%. The heat shrinkage rate means at least one of the so-called heat shrinkage rate in the MD direction and the so-called heat shrinkage rate in the TD direction.

The surface of the base material 11 on the side of the pressure-sensitive adhesive layer 12 may be subjected to a physical treatment, a chemical treatment, or a priming treatment to improve adhesion with the pressure-sensitive adhesive layer 12. [ Examples of the physical treatment include corona treatment, plasma treatment, sand matte treatment, ozone exposure treatment, flame exposure treatment, high-pressure electric exposure treatment, and ionizing radiation treatment. The chemical treatment includes, for example, chromic acid treatment. It is preferable that the treatment for enhancing the adhesion is performed on the entire surface of the base material 11 on the pressure-sensitive adhesive layer 12 side.

The thickness of the base material 11 is preferably 40 占 퐉 or more, more preferably 40 占 퐉 or more from the viewpoint of securing the strength for the base material 11 to function as a support in the dicing tape 10 to the dicing die- Is at least 50 탆, more preferably at least 55 탆, and even more preferably at least 60 탆. From the viewpoint of realizing suitable flexibility in the dicing tape 10 to the dicing die-bonding film X, the thickness of the base material 11 is preferably 200 占 퐉 or less, more preferably 180 占 퐉 or less Preferably 150 mu m or less.

The pressure-sensitive adhesive layer 12 of the dicing tape 10 contains a pressure-sensitive adhesive. The pressure-sensitive adhesive may be a pressure-sensitive adhesive (pressure-sensitive adhesive force-reducing adhesive) capable of intentionally reducing the pressure-sensitive adhesive force by external action such as irradiation with radiation or heating, and may be a pressure- Non-reducing type pressure-sensitive adhesive), and can be appropriately selected in accordance with the method and condition for disposing semiconductor chips to be separated by using the dicing die-bonding film X.

In the case where the pressure-sensitive adhesive force-reduction type pressure-sensitive adhesive is used as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, the pressure-sensitive adhesive layer 12 exhibits a relatively high adhesive force and a relatively low pressure- Can be distinguished from each other. For example, when the adhesive layer 20 is bonded to the pressure-sensitive adhesive layer 12 of the dicing tape 10 in the process of manufacturing the dicing die-bonding film X, or when the dicing die- It is possible to suppress or prevent the adherence or peeling of the adherend such as the adhesive layer 20 from the pressure-sensitive adhesive layer 12 by using a state in which the pressure-sensitive adhesive layer 12 exhibits a relatively high adhesive force, In the pickup process for picking up the semiconductor chip with adhesive layer from the dicing tape 10 of the dicing die-bonding film X, the adhesive force of the pressure-sensitive adhesive layer 12 is reduced, It becomes possible to properly pick up the attached semiconductor chip.

Examples of such a pressure sensitive adhesives with reduced pressure include radiation curable pressure sensitive adhesives (radiation curable pressure sensitive adhesives) and heated foamed pressure sensitive adhesives. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of pressure-sensitive adhesive force-reducing adhesive may be used, or two or more types of pressure-sensitive adhesive force-reducing pressure-sensitive adhesive may be used. Further, the entirety of the pressure-sensitive adhesive layer 12 may be formed of an adhesive force-reducing type pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of an adhesive pressure- For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entirety of the pressure-sensitive adhesive layer 12 may be formed of an adhesion-reducing type pressure-sensitive adhesive, and a predetermined portion of the pressure- And another portion may be formed of an adhesive force reducing type pressure-sensitive adhesive. In the case where the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers constituting the laminated structure may be formed of the pressure-sensitive adhesive force-reducing type adhesive, and some of the layers of the laminated structure may be formed of the pressure-

As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, a pressure-sensitive adhesive of the type which is cured by irradiation with an electron beam, ultraviolet ray,? Ray,? Ray,?, Or X ray can be used. Sensitive adhesive (ultraviolet curing type pressure-sensitive adhesive) can be suitably used.

As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, a pressure-sensitive adhesive containing a base polymer such as an acrylic pressure-sensitive acrylic polymer and a radically polymerizable monomer component or oligomer component having a functional group such as a radiation- , And addition-type radiation-curable pressure-sensitive adhesives.

The acrylic polymer preferably contains a monomer unit derived from an acrylate ester and / or a methacrylate ester as a main monomer unit in the mass ratio. Hereinafter, "(meth) acryl" refers to "acrylic" and / or "methacryl".

Examples of the (meth) acrylic acid ester for forming the monomer unit of the acrylic polymer include (meth) acrylic acid ester containing a hydrocarbon group such as alkyl methacrylate, (meth) acrylic acid cycloalkyl ester and (meth) . Examples of the (meth) acrylic acid alkyl ester include methyl esters, ethyl esters, isopropyl esters, butyl esters, isobutyl esters, s-butyl esters, t-butyl esters, pentyl esters, iso Isohexyl ester, isooctyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (ie, lauryl ester), tridecyl ester, Tetradecyl ester, hexadecyl ester, octadecyl ester and eicosyl ester. (Meth) acrylic acid cycloalkyl esters include, for example, cyclopentyl esters and cyclohexyl esters of (meth) acrylic acid. Examples of (meth) acrylic acid aryl esters include phenyl (meth) acrylate and benzyl (meth) acrylate. As the (meth) acrylic acid ester as the main monomer for the acrylic polymer, one kind of (meth) acrylic acid ester may be used, or two or more kinds of (meth) acrylic acid esters may be used. (Meth) acrylic acid ester as a main monomer in the entire monomer component for forming an acrylic polymer, the ratio of the (meth) acrylic acid ester as the main monomer is preferably Is not less than 40% by mass, and more preferably not less than 60% by mass.

The acrylic polymer may contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid ester in order to modify its cohesive strength, heat resistance, and the like. Examples of such monomer components include functional group-containing monomers such as carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide and acrylonitrile have. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid. Examples of the acid anhydride monomers include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include (meth) acrylic acid 2-hydroxyethyl, (meth) acrylate 2-hydroxypropyl, (meth) acrylate 4-hydroxybutyl, (meth) (Meth) acrylate, 12-hydroxylauryl (meth) acrylate and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methylglycidyl (meth) acrylate. (Meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acrylamide sulfonic acid, And acryloyloxynaphthalenesulfonic acid. As the phosphate group-containing monomer, for example, 2-hydroxyethyl acryloyl phosphate can be mentioned. As the other monomer for the acrylic polymer, one kind of monomer may be used, or two or more kinds of monomers may be used. (Meth) acrylic acid ester, the proportion of the other monomer component in the total monomer component for forming the acrylic polymer is preferably 60 mass% or more, more preferably 60 mass% or less, Or less, preferably 40 mass% or less.

The acrylic polymer may contain a monomer unit derived from a multifunctional monomer capable of copolymerizing with a monomer component such as (meth) acrylic acid ester as a main monomer in order to form a crosslinked structure in the polymer backbone. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (Meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (Meth) acrylate), polyester (meth) acrylate, and urethane (meth) acrylate. As the polyfunctional monomer for the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. The proportion of the polyfunctional monomer in the total monomer component for forming the acrylic polymer is preferably not more than 40% by mass in order to appropriately express the basic properties such as adhesiveness by the (meth) acrylate ester in the pressure- , Preferably not more than 30 mass%.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming it. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of the high degree of cleanliness in the semiconductor device manufacturing method using the dicing tape 10 to the dicing die bonding film X, the dicing tape 10 to the dicing die- The number average molecular weight of the acrylic polymer is preferably 100,000 or more, and more preferably 200,000 to 3,000,000.

The pressure-sensitive adhesive layer (12) and the pressure-sensitive adhesive for forming it may contain, for example, an external crosslinking agent to increase the number average molecular weight of the base polymer such as an acrylic polymer. Examples of the external crosslinking agent for reacting with the base polymer such as an acrylic polymer to form a crosslinked structure include a polyisocyanate compound, an epoxy compound, a polyol compound (such as a polyphenol compound), an aziridine compound, and a melamine crosslinking agent. The content of the external crosslinking agent in the pressure-sensitive adhesive layer (12) and the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer (12) is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the base polymer.

Examples of the radiation polymerizable monomer component for forming the radiation curable pressure sensitive adhesive include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra Acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation-polymerizable oligomer component for forming the radiation-curable pressure-sensitive adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based and polybutadiene- Is appropriate. The total content of the radiation-polymerizable monomer component and the oligomer component in the radiation-curing pressure-sensitive adhesive is determined within a range capable of appropriately lowering the adhesive force of the pressure-sensitive adhesive layer 12 to be formed. With respect to 100 parts by mass of the base polymer such as an acrylic polymer, For example, 5 to 500 parts by mass, and preferably 40 to 150 parts by mass. As the addition type radiation curable pressure sensitive adhesive, for example, those disclosed in Japanese Patent Application Laid-open No. 60-196956 may be used.

As the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, for example, an internal radiation-curable pressure-sensitive adhesive containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond at the polymer side chain, An adhesive may also be used. Such an intrinsic type radiation-curable pressure-sensitive adhesive is suitable for suppressing unintended changes in the pressure-sensitive adhesive properties due to the movement of a low molecular weight component in the pressure-sensitive adhesive layer 12 to be formed.

As the base polymer contained in the intrinsic type radiation-curable pressure-sensitive adhesive, it is preferable that the acrylic polymer has a basic skeleton. As the acrylic polymer forming such basic skeleton, the above-mentioned acrylic polymer can be employed. As a method for introducing a radiation-polymerizable carbon-carbon double bond to an acrylic polymer, for example, there is a method in which an acrylic polymer is obtained by copolymerizing raw monomers containing a monomer having a predetermined functional group (first functional group) (Second functional group) and a compound having a radiation-polymerizable carbon-carbon double bond, which are capable of generating a reaction in the condensation reaction of the acrylic polymer with the radiation-polymerizing property of the carbon- Or an addition reaction is carried out.

Examples of the combination of the first functional group and the second functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, an isocyanate group and a hydroxy group. Among these combinations, a combination of a hydroxy group and an isocyanate group or a combination of an isocyanate group and a hydroxy group is suitable from the viewpoint of easiness in tracking the reaction. The production of a polymer having an isocyanate group having a high reactivity is highly technically difficult. From the viewpoint of preparation or availability of an acrylic polymer, it is preferable that the first functional group on the acrylic polymer side is a hydroxy group and the second functional group is an isocyanate group The case is more appropriate. In this case, examples of the isocyanate compound covalently bonded to the radiation-polymerizable carbon-carbon double bond and the isocyanate group as the second functional group include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, and m- alpha, alpha -dimethylbenzyl isocyanate. As the acrylic polymer carrying the first functional group, it is preferable to include a monomer unit derived from the hydroxy group-containing monomer, and examples thereof include 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl It is also preferable to include a monomer unit derived from an ether compound such as an ether.

The radiation-curing pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator. As the photopolymerization initiator, for example, an? -Ketol compound, an acetophenone compound, a benzoin ether compound, a ketal compound, an aromatic sulfonyl chloride compound, a photoactive oxime compound, a benzophenone compound, Compounds, camphorquinones, halogenated ketones, acylphosphine oxides and acylphosphonates. Examples of the? -ketol compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone,? -hydroxy- ?,? '- dimethylacetophenone, 2-hydroxypropiophenone, and 1-hydroxycyclohexyl phenyl ketone. Examples of the acetophenone-based compound include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone, 4- (methylthio) -phenyl] -2-morpholinopropane-1. Examples of the benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. As the ketel-based compound, for example, benzyldimethylketal can be given. The aromatic sulfonyl chloride-based compound includes, for example, 2-naphthalenesulfonyl chloride. As the optically active oxime compound, for example, 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime can be mentioned. Examples of the benzophenone-based compound include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of the thioxanthone compound include thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4- 2,4-diethyl thioxanthone, and 2,4-diisopropyl thioxanthone. The content of the photopolymerization initiator in the radiation-curing pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer such as acrylic polymer.

The heat-expandable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive containing components (foaming agent, thermally expandable microspheres, etc.) that foam or expand by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents As the thermally expandable microspheres, for example, microspheres having a constitution in which a material which is easily gasified by heating to expand is enclosed in the shell. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, and azide. Examples of the organic foaming agent include azo-based compounds such as azobisisobutyronitrile, azodicarbonamide, barium azodicarboxylate, and the like, fluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane, Hydrazine compounds such as toluenesulfonyl hydrazide, diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis (benzenesulfonylhydrazide) and allybis (sulfonylhydrazide), ρ -Carbodiimide compounds such as tolylene sulfonyl semicarbazide and 4,4'-oxybis (benzenesulfonyl semicarbazide), 5-morpholyl-1,2,3,4-thiatriazole And N-nitroso compounds such as N, N'-dinitrosopentamethylenetetramine and N, N'-dimethyl-N, N'-dinitrosoterephthalamide. Examples of the material that can be easily gasified and expanded by heating to form the thermo-expansive microsphere as described above include isobutane, propane, and pentane. A thermally expandable microsphere can be manufactured by enclosing a material which easily gasifies and expands by heating in an envelope forming material by a coacervation method or an interfacial polymerization method. As the sheathing material, a material exhibiting heat melting property or a material capable of being ruptured by thermal expansion action of the enclosed material can be used. Such materials include, for example, vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.

Examples of the above-mentioned adhesive force reducing type pressure-sensitive adhesive include, for example, a pressure-sensitive adhesive in the form of a radiation-curing pressure-sensitive adhesive previously cured by irradiation with radiation, a pressure-sensitive adhesive, and the like. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of pressure-sensitive adhesive force-reducing type pressure-sensitive adhesive may be used, or two or more types of pressure-sensitive adhesive force-reducing type pressure-sensitive adhesives may be used. The entirety of the pressure-sensitive adhesive layer 12 may be formed of an adhesive force-reducing pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of an adhesive pressure- For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the whole of the pressure-sensitive adhesive layer 12 may be formed of an adhesive force-reducing pressure-sensitive adhesive, and a predetermined portion of the pressure- And the other portion may be formed of an adhesive force reducing type pressure-sensitive adhesive. In the case where the pressure-sensitive adhesive layer 12 has a laminated structure, all the layers constituting the laminated structure may be formed of an adhesive force reducing type pressure-sensitive adhesive, and a part of the laminated structure may be formed of an adhesive pressure-

The pressure-sensitive adhesive (radiation-curable pressure-sensitive adhesive completed by irradiation with radiation) in which the radiation-curable pressure-sensitive adhesive is cured by radiation irradiation in advance exhibits adhesiveness due to the contained polymer component even if the adhesive force is reduced by irradiation of radiation. So that it is possible to exhibit the minimum necessary adhesive force to the dicing tape pressure-sensitive adhesive layer. In the present embodiment, when the radiation-cured radiation-curable pressure-sensitive adhesive is used, the entirety of the pressure-sensitive adhesive layer 12 may be formed by the radiation-cured radiation curable pressure-sensitive adhesive in the surface enlarging direction of the pressure- A part of the radiation-curable pressure-sensitive adhesive 12 may be formed of a radiation-cured radiation-curable pressure-sensitive adhesive, and the other part may be formed of a radiation curable pressure-sensitive adhesive without radiation.

The dicing die-bonding film X containing at least a part of the pressure-sensitive adhesive layer 12 of the radiation-curable pressure-sensitive adhesive of radiation exposure can be produced, for example, by the following procedure. First, a pressure-sensitive adhesive layer (radiation-curable pressure-sensitive adhesive layer) made of a radiation-curing pressure-sensitive adhesive is formed on the base material 11 of the dicing tape 10. Subsequently, a predetermined part or all of the radiation-curing pressure-sensitive adhesive layer is irradiated with radiation to form a pressure-sensitive adhesive layer containing at least a part of the radiation-curing pressure-sensitive adhesive subjected to irradiation with radiation. Then, an adhesive layer to be an adhesive layer 20 described later is formed on the pressure-sensitive adhesive layer. Thereafter, the pressure-sensitive adhesive layer 12 and the adhesive layer 20 are formed together by a batch processing method such as the later-described pressure-sensitive adhesive layer and adhesive layer. The dicing die-bonding film X containing at least a part of the pressure-sensitive adhesive layer 12 of the radiation-curable pressure-sensitive adhesive of radiation exposure may be manufactured through the following process. First, a pressure-sensitive adhesive layer (radiation-curable pressure-sensitive adhesive layer) made of a radiation-curing pressure-sensitive adhesive is formed on the base material 11 of the dicing tape 10. Then, an adhesive layer to be an adhesive layer 20 described later is formed on the radiation-curing pressure-sensitive adhesive layer. Then, a predetermined part or all of the radiation-curing pressure-sensitive adhesive layer is irradiated with radiation to form a pressure-sensitive adhesive layer containing at least a part of the radiation-curing pressure-sensitive adhesive subjected to radiation. Thereafter, the pressure-sensitive adhesive layer 12 and the adhesive layer 20 are formed together by a batch processing method such as the later-described pressure-sensitive adhesive layer and adhesive layer.

On the other hand, as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, known pressure-sensitive adhesives can be used, and acrylic pressure-sensitive adhesives or rubber pressure-sensitive adhesives having an acrylic polymer as a base polymer can be suitably used. When the pressure-sensitive adhesive layer 12 contains an acrylic pressure-sensitive adhesive as a pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic pressure-sensitive adhesive is preferably a monomer unit derived from a (meth) . As such an acryl-based polymer, for example, the above-mentioned acrylic polymer can be mentioned in relation to the radiation-curable pressure-sensitive adhesive.

The pressure-sensitive adhesive layer (12) and the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer (12) may contain a crosslinking accelerator, a tackifier, an antioxidant, a colorant such as a pigment or a dye, The colorant may be a compound that undergoes coloration upon irradiation with radiation. Such compounds include, for example, leuco dyes.

The thickness of the pressure-sensitive adhesive layer 12 is preferably 1 to 50 占 퐉, more preferably 2 to 30 占 퐉, and still more preferably 5 to 25 占 퐉. Such a configuration is suitable for balancing the adhesive force to the adhesive layer 20 before and after the radiation curing of the pressure-sensitive adhesive layer 12 when, for example, the pressure-sensitive adhesive layer 12 includes a radiation-curable pressure- Do.

The adhesive layer 20 of the dicing die-bonding film X has a function as an adhesive showing the thermosetting property for die bonding and an adhesive function for holding a frame member such as a ring frame with a work such as a semiconductor wafer. In the present embodiment, the point adhesive for forming the adhesive layer 20 may have a composition including a thermosetting resin and a thermoplastic resin as a binder component, and may have a thermosetting functional group capable of reacting with the curing agent to cause bonding And a thermoplastic resin that is thermally stable. When the point adhesive for forming the adhesive layer 20 has a composition including a thermoplastic resin accompanied by a thermosetting functional group, the point adhesive does not need to include a thermosetting resin (such as an epoxy resin). The adhesive layer 20 may have a single-layer structure or a multi-layer structure.

The adhesive layer 20 for joining the function as an adhesive for die bonding and the adhesive function was formed on an adhesive layer sample piece having a width of 4 mm at an initial chuck distance of 10 mm, a frequency of 10 Hz, a dynamic strain of +/- 0.5 占 퐉, (First tensile storage modulus) at -15 캜 measured under the conditions of a tensile modulus (tensile storage modulus of elasticity) of 1000 to 4000 MPa, preferably 1200 to 3900 MPa, and more preferably 1500 to 3800 MPa. The adhesive layer 20 has a tensile storage elastic modulus (second tensile storage modulus) at 23 DEG C of 10 to 240 MPa, which is measured under the tensile storage modulus measurement conditions described above for the adhesive layer sample piece having a width of 4 mm, 20 to 200 MPa, and more preferably 40 to 150 MPa. The tensile storage modulus can be obtained based on dynamic viscoelasticity measurement performed using a dynamic viscoelasticity measuring apparatus (trade name: "Rheogel-E4000", manufactured by UBM). In the measurement, the size of the sample piece to be measured was set to 4 mm wide × 20 mm long, the initial chuck distance of the sample piece holding chuck was set to 10 mm, the measurement mode was set to the tensile mode, Deg.] C to 100 [deg.] C, the frequency is 10Hz, the dynamic strain is set to +/- 0.5 mu m, and the temperature raising rate is set to 5 deg. C / min.

In the peeling test in the condition of -15 deg. C, the peeling angle of 180 deg. And the tensile rate of 300 mm / min (the first condition), the adhesive layer 20 joining the function as the die bonding adhesive and the sticking function, Preferably at least 1 N / 10 mm, more preferably at least 1.5 N / 10 mm, and more preferably at least 2 N / 10 mm. In the peeling test under the first condition, the adhesive layer 20 exhibits a 180 deg. Peel adhesion force of, for example, 100 N / 10 mm or less, preferably 50 N / 10 mm or less, with respect to the SUS plane. The adhesive layer 20 is preferably subjected to a peeling test at a temperature of 23 DEG C under a condition of a peeling angle of 180 DEG and a tensile rate of 300 mm / min (second condition), preferably 0.3 N / Or more, more preferably 0.4 N / 10 mm or more, and more preferably 0.5 N / 10 mm or more. In the peeling test under the second condition, the adhesive layer 20 exhibits a 180 deg. Peeling adhesive force of, for example, 20 N / 10 mm or less, preferably 10 N / 10 mm or less, with respect to the SUS plane. The 180 deg. Peel adhesion can be measured by using a tensile tester (trade name " Autograph AGS-J ", manufactured by Shimadzu Seisakusho Co., Ltd.). The sample piece provided for the measurement is reinforced by a reinforcing tape (trade name " BT-315 ", manufactured by Nitto Denko K.K.) and has a size of 10 mm in width x 100 mm in length. The bonding to the SUS plate, which is the adherend of the sample piece, is carried out by a compression bonding operation in which a 2 kg roller is reciprocated one time. In this measurement, the measurement temperature to the peeling temperature is -15 占 폚 (first condition) or 23 占 폚 (second condition), the peeling angle is 180 占 and the tensile speed is 300 mm / min.

When the adhesive layer 20 contains a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin and a thermosetting polyimide Resin. After the adhesive layer 20 is formed, one type of thermosetting resin may be used, or two or more kinds of thermosetting resins may be used. An epoxy resin is preferable as the thermosetting resin included in the adhesive layer 20 because the content of ionic impurities or the like which may cause corrosion of the semiconductor chip to be die-bonded tends to be small. As the curing agent of the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include epoxy resins such as bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolak type, And epoxy resins of the orthocresol novolak type, the trishydroxyphenylmethane type, the tetraphenylol ethane type, the hydantoin type, the trisglycidyl isocyanurate type and the glycidyl amine type. The novolak-type epoxy resin, the biphenyl-type epoxy resin, the trishydroxyphenylmethane-type epoxy resin, and the tetraphenylolethane-type epoxy resin are excellent in the reactivity with the phenol resin as the curing agent and the excellent heat resistance, Is preferably used as the epoxy resin contained in the epoxy resin (20).

Examples of the phenol resin which can act as a curing agent of the epoxy resin include novolak type phenol resins, resol type phenol resins, and polyoxystyrenes such as polyparaxyxstyrene. Examples of the novolak-type phenol resin include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, and nonylphenol novolac resins. As the phenol resin which can act as a curing agent for the epoxy resin, one type of phenol resin may be used, or two or more kinds of phenol resins may be used. Phenol novolak resin or phenol aralkyl resin tends to improve connection reliability of the adhesive when it is used as a curing agent for an epoxy resin as an adhesive for die bonding. Therefore, it is preferable that the epoxy resin contained in the adhesive layer 20 As a curing agent.

In view of sufficiently accelerating the curing reaction between the epoxy resin and the phenolic resin in the adhesive layer 20, the phenolic resin preferably has a hydroxyl group in the phenolic resin per equivalent of the epoxy group in the epoxy resin component, preferably 0.5 to 2.0 equivalents , More preferably 0.8 to 1.2 equivalents.

Examples of the thermoplastic resin included in the adhesive layer 20 include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin , A polycarbonate resin, a thermoplastic polyimide resin, a polyamide resin such as 6-nylon or 6,6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET or PBT, a polyamideimide resin, Fluorine resin. In forming the adhesive layer 20, one type of thermoplastic resin may be used, or two or more types of thermoplastic resins may be used. The thermoplastic resin contained in the adhesive layer 20 is preferably an acrylic resin because it is easy to secure bonding reliability by the adhesive layer 20 because it has few ionic impurities and high heat resistance. From the viewpoint of both adhesion at the room temperature and its vicinity and prevention of residue at the time of peeling of the adhesive layer 20 to be described later with respect to the ring frame, the adhesive layer 20 is preferably composed of glass It is preferred that the polymer contains a polymer having a transition temperature of -10 to 10 占 폚. The main component of the thermoplastic resin is a resin component that occupies the largest mass ratio among the thermoplastic resin components.

As the glass transition temperature of the polymer, a glass transition temperature (theoretical value) obtained based on the following Fox equation can be used. The formula of Fox is a relational expression between the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of the homopolymer for each constituent monomer in the polymer. In the following Fox equation, Tg represents the glass transition temperature (占 폚) of the polymer, Wi represents the weight fraction of the monomer i constituting the polymer, Tgi represents the glass transition temperature (占 폚) of the homopolymer of the monomer i, . For example, reference may be made to the glass transition temperature of the homopolymer, for example, " Introduction of synthetic resin for novel polymeric paper 7 paint " (Kitaoka Kogyo Co., (Mitsubishi Rayon Co., Ltd.), glass transition temperatures of various homopolymers are illustrated. On the other hand, the homopolymer glass transition temperature of the monomer can be determined by a method specifically disclosed in Japanese Patent Laid-Open No. 2007-51271.

Fox's equation 1 / (273 + Tg) =? [Wi / (273 + Tgi)]

The acrylic resin contained as the thermoplastic resin in the adhesive layer 20 preferably contains a monomer unit derived from a (meth) acrylic acid ester as a main monomer unit in the mass ratio. As such a (meth) acrylic acid ester, for example, a (meth) acrylate ester similar to that described above with respect to an acrylic polymer as a component of the radiation curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 can be used. The acrylic resin contained as the thermoplastic resin in the adhesive layer 20 may contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid ester. Examples of such other monomer components include functional group-containing monomers such as carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide and acrylonitrile Specific examples of the other monomers copolymerizable with the (meth) acrylic acid ester with respect to the acrylic polymer as a component of the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 include the same Can be used. The acrylic resin contained in the adhesive layer 20 is preferably a (meth) acrylic acid ester (particularly, an alkyl (meth) acrylate having an alkyl group of 4 or less in the number of carbon atoms of 4 or less from the viewpoint of realizing a high cohesive force in the adhesive layer 20 (Meth) acrylate), a carboxyl group-containing monomer, a nitrogen atom-containing monomer and a polyfunctional monomer (particularly a polyglycidyl-based polyfunctional monomer), more preferably a copolymer of ethyl acrylate, butyl acrylate, Acrylonitrile, and polyglycidyl (meth) acrylate.

The content ratio of the thermosetting resin in the adhesive layer 20 is preferably 5 to 60% by mass, more preferably 10 to 50% by mass in view of adequately expressing the function of the thermosetting adhesive in the adhesive layer 20 Mass%.

When the adhesive layer 20 contains a thermoplastic resin with a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin for forming the thermosetting functional group-containing acrylic resin preferably includes a monomer unit derived from a (meth) acrylic acid ester as a main monomer unit in a mass ratio. As such a (meth) acrylic acid ester, for example, a (meth) acrylic acid ester similar to that described above with respect to the acrylic polymer monocomponent may be used in the radiation-curable pressure-sensitive adhesive for forming the pressure- On the other hand, examples of the thermosetting functional group for forming the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxy group, a hydroxyl group, and an isocyanate group. Among them, a glycidyl group and a carboxyl group can be suitably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be suitably used. As the curing agent of the acrylic resin containing a thermosetting functional group, for example, the one described above may be used as an external crosslinking agent which may be a component of a radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer (12). When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenolic compound can be suitably used as a curing agent. For example, the above-mentioned various phenol resins can be used.

In order to realize a certain degree of degree of crosslinking with respect to the adhesive layer 20 before curing for die bonding, for example, it is possible to react with the functional group at the molecular chain terminal of the above-mentioned resin contained in the adhesive layer 20 Is preferably blended as a crosslinking agent in a resin composition for forming an adhesive layer. Such a configuration is suitable for improving the adhesive property under high temperature to the adhesive layer 20 and also for improving the heat resistance. As such a crosslinking agent, for example, a polyisocyanate compound can be mentioned. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylenediisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyhydric alcohol and diisocyanate. The content of the crosslinking agent in the resin composition for forming an adhesive layer is preferably 0.05% or more, more preferably 0.05% or less, more preferably 0.05% or less, And more preferably 7 parts by mass or less from the viewpoint of improving the adhesive strength of the adhesive layer 20 to be formed. As the crosslinking agent in the adhesive layer 20, another polyfunctional compound such as an epoxy resin may be used in combination with the polyisocyanate compound.

The content ratio of the high molecular weight component in the adhesive layer 20 is preferably 50 to 100% by mass, and more preferably 50 to 80% by mass. The high molecular weight component is a component having a weight average molecular weight of 10,000 or more. Such a configuration is preferable for achieving both adhesion at the room temperature and its vicinity and prevention of residue at the peeling of the adhesive layer 20 with respect to the ring frame described later. The adhesive layer 20 may contain a liquid resin that is liquid at 23 占 폚. When the adhesive layer 20 contains such a liquid resin, the content ratio of the liquid resin in the adhesive layer 20 is preferably 1 to 10% by mass, more preferably 1 to 5% by mass. Such a configuration is preferable for achieving both adhesion at the room temperature and its vicinity and prevention of residue at the peeling of the adhesive layer 20 with respect to the ring frame described later.

The adhesive layer 20 may contain a filler. The elasticity of the adhesive layer 20 such as the tensile storage modulus and the physical properties such as conductivity and thermal conductivity can be adjusted by the combination of the filler with the adhesive layer 20. [ Examples of the filler include an inorganic filler and an organic filler, and particularly, an inorganic filler is preferable. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, , Aluminum, gold, silver, copper, and nickel, alloys, amorphous carbon black, and graphite. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. As the filler in the adhesive layer 20, one type of filler may be used, or two or more kinds of fillers may be used. In order to secure the adhesiveness of the adhesive layer 20 to the ring frame in the low temperature expansion process to be described later, the filler content in the adhesive layer 20 is preferably 30% by mass or less, more preferably 25% % Or less.

In the case where the adhesive layer 20 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 mu m, more preferably 0.005 to 1 mu m. The structure in which the average particle diameter of the filler is 0.005 占 퐉 or more is suitable for realizing high wettability and adhesion to an adherend such as a semiconductor wafer in the adhesive layer 20. [ The constitution in which the average particle diameter of the filler is not more than 10 탆 is suitable for securing heat resistance while enjoying a sufficient filler adding effect in the adhesive layer 20. The average particle diameter of the filler can be obtained, for example, by using a particle size distribution meter (trade name " LA-910 " manufactured by Horiba Seisakusho Co., Ltd.) of a photometric system.

The adhesive layer 20 may contain other components as necessary. Examples of other components include flame retardants, silane coupling agents, and ion trap agents. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the silane coupling agent include? - (3,4-epoxycyclohexyl) ethyltrimethoxysilane,? -Glycidoxypropyltrimethoxysilane, and? -Glycidoxypropylmethyldiethoxysilane. have. Examples of the ion trap agent include hydrotalcites, bismuth hydroxide, hydrous antimony oxides (e.g., " IXE-300 ", manufactured by Toagosei Co., Ltd.), zirconium phosphate having a specific structure (E.g., " IXE-100 " manufactured by Kyowa Chemical Industry Co., Ltd.), magnesium silicate (for example, " Kyowade 600 ", manufactured by Kyowa Chemical Industry Co., Kyo Ward 700 "). A compound capable of forming a complex between metal ions can also be used as an ion trap agent. Examples of such a compound include triazole-based compounds, tetrazole-based compounds and bipyridyl-based compounds. Of these, triazole-based compounds are preferable from the viewpoint of the stability of the complex formed with metal ions. Examples of such triazole compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-3-t-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy- Butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- Phenyl) benzotriazole, 6- (2-benzotriazolyl) -4-t-octyl-6'- Dihydroxypropyl) benzotriazole, 1- (1,2-dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4- Benzotriazole, octyl-3- [3-t-butyl-4-methylphenol, 2- (2-hydroxy- Phenyl] propionate, 2-ethylhexyl-3- [3-t-butoxycarbonylamino] Phenyl) propionate, 2- (2H-benzotriazol-2-yl) -6- (1-methyl 2- (2H-benzotriazol-2-yl) -4-t-butylphenol, 2- (2- 2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) (2-hydroxy-3,5-di-t-butylphenyl) benzotriazole, 2- (2-hydroxy- Benzotriazole, 2,2'-methylenebis [6- (2H) -phenyl] -2H-benzotriazole, 2- [2-hydroxy- 4- (1,1,3,3-tetramethylbutyl) phenol], 2- [2-hydroxy-3,5-bis (?,? - dimethylbenzyl) ] -2H-benzotriazole, and methyl-3- [3- (2H-benzotriazol-2-yl) -5-t-butyl-4-hydroxyphenyl] propionate. In addition, a predetermined hydroxyl group-containing compound such as a quinoline compound, a hydroxyanthraquinone compound, or a polyphenol compound can also be used as an ion trap agent. Specific examples of such hydroxyl group-containing compounds include 1,2-benzene diol, alizarin, anthrulphine, tannin, gallic acid, methyl gallate, pyrogallol and the like. As the other components as described above, one kind of component may be used, or two or more kinds of components may be used.

The thickness of the adhesive layer 20 is, for example, in the range of 1 to 200 占 퐉. The upper limit of the thickness is preferably 100 占 퐉, more preferably 80 占 퐉. The lower limit of the thickness is preferably 3 占 퐉, more preferably 5 占 퐉.

The outer peripheral end portion 11e of the base material 11 and the outer peripheral end portion 12e of the pressure sensitive adhesive layer 12 in the dicing tape 10 in the in-plane direction D of the dicing die- , And the outer peripheral end 20e of the adhesive layer 20 is within 1000 占 퐉, preferably within 500 占 퐉. That is, the outer circumferential end 20e of the adhesive layer 20 is formed so as to extend in the film in-plane direction D from the inner side of 1000 m to the outer side 1000 m with respect to the outer circumferential end 11e of the base material 11 Preferably from the inner side of 500 mu m to the outer side of 500 mu m and further from the inner side of 1000 mu m to the outer side of 1000 mu m with respect to the outer peripheral end 12e of the pressure- Lt; RTI ID = 0.0 > 500 < / RTI > The dicing tape 10 to the pressure-sensitive adhesive layer 12 and the adhesive layer 20 thereon have substantially the same dimensions in the in-plane direction D, In addition to a frame adhesion area.

The dicing die-bonding film X may be accompanied by a separator S as shown in Fig. Specifically, the dicing die-bonding film X may have a sheet-like shape accompanied by the separator S, and the separator S may have a long shape, and a plurality of dicing die-bonding films X may be disposed thereon. So that the roll may be in the form of a roll. The separator S is an element for covering and protecting the surface of the adhesive layer 20 of the dicing die-bonding film X. When the dicing die-bonding film X is used, the separator S is peeled from the film. Examples of the separator S include a plastic film or paper surface-coated with a releasing agent such as a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a fluorine-based releasing agent or a long-chain alkyl acrylate-based releasing agent. The thickness of the separator S is, for example, 5 to 200 mu m.

The dicing die-bonding film X having the above-described structure can be produced, for example, as follows.

As shown in Fig. 3 (a), the sheet body to be formed on the dicing tape 10 of the dicing die-bonding film X is formed on the base material 11 'to be formed on the base material 11 And a pressure-sensitive adhesive layer 12 'to be formed on the pressure-sensitive adhesive layer 12 to be formed thereon. The base material 11 'made of resin can be produced by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a co-extrusion method, and a dry lamination method. The film or substrate 11 'after the film formation is subjected to a predetermined surface treatment if necessary. In forming the pressure-sensitive adhesive layer 12 ', for example, after preparing a pressure-sensitive adhesive solution for forming a pressure-sensitive adhesive layer, the pressure-sensitive adhesive solution is applied on the base 11' or a predetermined separator to form a pressure-sensitive adhesive coating film. Examples of the application method of the pressure-sensitive adhesive solution include roll coating, screen coating, and gravure coating. Subsequently, in the pressure-sensitive adhesive coating film, a crosslinking reaction is caused by heating, if necessary, and desolvation is carried out if necessary. The heating temperature is, for example, 80 to 150 占 폚, and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 12 'is formed on the separator, the pressure-sensitive adhesive layer 12' accompanying the separator is bonded to the substrate 11 ', and then the separator is peeled off. As described above, the sheet chain tape 10 'to be formed on the dicing tape 10 can be produced.

On the other hand, as shown in Fig. 3 (b), an adhesive film 20 'to be processed and formed in the adhesive layer 20 is produced. In the production of the adhesive film 20 ', after preparing the adhesive composition for forming an adhesive layer, the adhesive composition is first applied on the separator S to form an adhesive composition layer. Examples of the application method of the adhesive composition layer include roll coating, screen coating, and gravure coating. Subsequently, in the adhesive composition layer, a crosslinking reaction is caused by heating, if necessary, and desolvation is carried out if necessary. The heating temperature is, for example, 70 to 160 占 폚, and the heating time is, for example, 1 to 5 minutes. As described above, the adhesive film 20 'carrying the separator S can be manufactured.

In the production of the dicing die-bonding film X, as shown in Fig. 3C, the pressure-sensitive adhesive layer 12 'side of the tape 10' described above and the adhesive film 20 ' . Thereby, a laminated sheet body having a laminated structure including the separator S, the adhesive film 20 ', the pressure-sensitive adhesive layer 12' and the substrate 11 'is produced. In this step, the bonding temperature is, for example, 30 to 50 占 폚, preferably 35 to 45 占 폚. The bonding pressure (line pressure) is, for example, 0.1 to 20 kgf / cm, preferably 1 to 10 kgf / cm. In the case where the pressure-sensitive adhesive layer 12 is a radiation-curing pressure-sensitive adhesive layer as described above, when irradiating the pressure-sensitive adhesive layer 12 'with radiation such as ultraviolet rays after bonding of the adhesive film 20' For example, the pressure sensitive adhesive layer 12 'is irradiated with radiation from the side of the substrate 11', and the irradiation amount thereof is, for example, 50 to 500 mJ / cm 2, and preferably 100 to 300 mJ / cm 2. The irradiation region is the entirety of the pressure-sensitive adhesive layer 12 that is brought into close contact with the adhesive layer 20, for example. In the present invention, even when the pressure-sensitive adhesive layer 12 'to the pressure-sensitive adhesive layer 12 are designed as a radiation-curable pressure-sensitive adhesive layer of ultraviolet curing type or the like, the adhesive films 20' And is not cured by irradiation of radiation such as ultraviolet rays.

Next, as shown in Fig. 3 (d), the laminated sheet body is processed so as to project the cutting edge from the side of the substrate 11 'to the separator S (see (d ), A cut portion is schematically shown by a thick line). For example, a rotating roll with a cutting edge (a cutting blade with a cutting edge), which is disposed rotatably around an axis orthogonal to the direction F while moving the laminated sheet body in the one direction F at a constant speed, Is abutted against the base 11 'side of the laminated sheet body with a predetermined pressing force. Thereby, the dicing tape 10 (the substrate 11, the pressure-sensitive adhesive layer 12) and the adhesive layer 20 are collectively processed and the dicing die-bonding film X is formed on the separator S. Thereafter, as shown in Fig. 3 (e), the material laminated portion around the dicing die-bonding film X is removed from the separator S.

Thus, the dicing die-bonding film X can be produced.

In the manufacturing process of the semiconductor device, as described above, there is a case in which the expanding process using the dicing die-bonding film, that is, the expanding process for the cutting process, is carried out in order to obtain the semiconductor chip with adhesive layer In a bar exposing process, a work such as a semiconductor wafer and a frame member such as a ring frame are held together on the dicing die bond film, so that the die bond film as the adhesive layer can be removed by the expander of the dicing tape Is required. As described above, the adhesive layer 20 of the dicing die-bonding film X according to the present invention preferably has the above first tensile storage modulus at -15 캜 of 1000 to 4000 MPa, preferably 1200 to 3900 MPa, Is 1500 to 3800 MPa. Such a structure is suitable for removing the adhesive layer 20 in the expanding process carried out at a temperature of -15 캜 and a temperature lower than room temperature, It is suitable for realizing a good adhesion to the frame member of the frame. In addition, the adhesive layer 20 of the dicing die-bonding film X preferably has the second tensile storage elastic modulus at 23 占 폚 of 10 to 240 MPa, preferably 20 to 200 MPa, more preferably 40 To 150 MPa. Such a configuration is suitable for realizing a good adhesive force to a frame member such as a ring frame before and after the expanding process, for example, in the adhesive layer 20 at room temperature. As described above, the dicing die-bonding film X is suitable for realizing a good adhesive force to the frame member in the adhesive layer 20 while securing the cutting property in the expanding process.

The dicing die-bonding film X having the adhesive layer 20 having both the adhesive force of the base frame member and the releasability in the expanding process has a frame adhesion area in addition to the work adhesion area in the adhesive layer 20. [ With respect to such a dicing die-bonding film X, it is possible to design the dicing tape 10 or its adhesive layer 12 and the adhesive layer 20 thereon to have substantially the same dimensions. For example, in the in-plane direction D of the dicing die-bonding film X, the outer peripheral end portion 20e of the adhesive layer 20 is bonded to the outer peripheral end portion 11e of the base material 11 of the dicing tape 10, It is possible to employ a design having a distance of not more than 1000 mu m from the outer circumferential end 20e of the base 12. Such a dicing die-bonding film X is obtained by processing for forming one dicing tape 10 having a laminated structure of the substrate 11 and the pressure-sensitive adhesive layer 12 and for forming a single adhesive layer 20 It is suitable for carrying out the processing all at once by machining such as a single punching process and therefore is suitable for production efficiently in terms of reduction in the number of manufacturing steps and suppression of manufacturing cost.

As described above, the dicing die-bonding film X is suitable for realizing a good adhesive force to the frame member while securing the cutting property in the expanding step in the adhesive layer 20, and is also suitable for producing efficiently will be.

As described above, the adhesive layer 20 of the dicing die-bonding film X is preferably subjected to the peeling test under the conditions of -15 DEG C, the peeling angle of 180 DEG and the tensile rate of 300 mm / min, Shows a 180 DEG peel adhesion force of 1 N / 10 mm or more, more preferably 1.5 N / 10 mm or more, and more preferably 2 N / 10 mm or more. Further, as described above, the adhesive layer 20 can be peeled off from the SUS plane in the peeling test under the same conditions, for example, 180 N / 10 mm or less, preferably 50 N / It shows adhesive strength. This constitution relating to the adhesive force is suitable for ensuring the retention of the frame member by the dicing die-bonding film X at a temperature of -15 캜, which is lower than room temperature, and a temperature in the vicinity thereof.

As described above, the adhesive layer 20 of the dicing die-bonding film X is preferably subjected to a peeling test under the conditions of a temperature of 23 DEG C, a peeling angle of 180 DEG and a tensile rate of 300 mm / min, More preferably not less than 0.4 N / 10 mm, more preferably not less than 0.5 N / 10 mm. Further, as described above, the adhesive layer 20 can be peeled off from the SUS plane by, for example, 180 N / 10 mm or less, preferably 10 N / 10 mm or less in the peeling test under the same conditions It shows adhesive strength. This constitution regarding the adhesive force is suitable for ensuring the retention of the frame member by the dicing die-bonding film X at a temperature of 23 캜 and its vicinity.

4 to 9 show a semiconductor device manufacturing method according to an embodiment of the present invention.

In this semiconductor device manufacturing method, first, as shown in Figs. 4A and 4B, a dividing groove 30a is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the side of the first surface Wa of the semiconductor wafer W, and a wiring structure (not shown) necessary for the semiconductor element is already formed on the first surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held on the first surface Wa A dividing groove 30a having a predetermined depth is formed by using a rotating blade such as a dicing device. The dividing groove 30a is a space for separating the semiconductor wafer W into semiconductor chip units (the dividing grooves 30a are schematically shown by thick lines in Figs. 4 to 6).

Next, as shown in Fig. 4 (c), the bonding of the wafer processing tape T2 having the adhesive surface T2a to the first surface Wa side of the semiconductor wafer W, the peeling of the wafer processing tape T1 from the semiconductor wafer W Is performed.

Next, as shown in Fig. 4 (d), in a state in which the semiconductor wafer W is held on the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until the semiconductor wafer W reaches a predetermined thickness (Wafer thinning step). The grinding process can be performed using a grinding machine equipped with a grinding wheel. By this wafer thinning step, a semiconductor wafer 30A that can be separated into a plurality of semiconductor chips 31 is formed in the present embodiment. Specifically, the semiconductor wafer 30A has a portion (connection portion) for connecting a portion to be separated into a plurality of semiconductor chips 31 in the wafer on the second surface Wb side. The distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 mu m, and preferably the thickness of the connecting portion in the semiconductor wafer 30A, Is 3 to 20 mu m.

Next, as shown in Fig. 5A, the semiconductor wafer 30A held on the wafer processing tape T2 is bonded to the adhesive layer 20 of the dicing die bonding film X. Then, as shown in Fig. Thereafter, as shown in Fig. 5B, the wafer processing tape T2 is peeled from the semiconductor wafer 30A. In the case where the pressure-sensitive adhesive layer 12 in the dicing die-bonding film X is a radiation-curing pressure-sensitive adhesive layer, the adhesive layer 20 of the semiconductor wafer 30A is used instead of the above-described radiation irradiation in the production process of the dicing die- The adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the side of the base material 11. [ The dose is, for example, 50 to 500 mJ / cm 2, preferably 100 to 300 mJ / cm 2. The area (irradiation area R shown in FIG. 1) where irradiation with the adhesive layer 12 in the dicing die-bonding film X is performed as a measure for reducing the adhesive force is performed by, for example, applying the adhesive layer 20 in the pressure- Is a region excluding the periphery of the junction region.

Next, after the ring frame 41 is adhered onto the adhesive layer 20 of the dicing die-bonding film X, as shown in Fig. 6A, the dicing die- The die-bonding film X is fixed to the holding tool 42 of the expand apparatus.

Next, a first expanding process (a cool expansion process) is performed as shown in FIG. 6 (b) under a relatively low temperature condition, and the semiconductor wafer 30A is reorganized into a plurality of semiconductor chips 31 The adhesive layer 20 of the dicing die-bonding film X is cut into the adhesive layer 21 of the small piece, and the semiconductor chip 31 with the adhesive layer is obtained. In this process, the hollow cylinder-shaped push-up member 43 provided in the expanding device is raised against the dicing tape 10 at the lower side of the drawing of the dicing die bonding film X, and the semiconductor wafer 30A The dicing tape 10 of the dicing die-bonding film X to which the dicing die bonding film X is adhered is stretched so as to stretch in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. The expansions are performed on the dicing tape 10 under the condition that a tensile stress is generated within a range of preferably 15 to 32 MPa, more preferably 20 to 32 MPa. The temperature condition in the Cool Expansion process is, for example, 0 deg. C or less, preferably -20 to -5 deg. C, more preferably -15 to -5 deg. C, and more preferably -15 deg. The expand speed (the speed at which the lifting member 43 rises) in the cooling expansion process is preferably 0.1 to 100 mm / sec. The amount of expanse in the Cool Expand process is preferably 3 to 16 mm.

In the present step, the semiconductor wafer 30A is thin and is cut at a portion that is thin and fragile, resulting in fragmentation into the semiconductor chip 31. [ In addition, in this step, deformation is suppressed in each region where each semiconductor chip 31 is closely attached to the adhesive layer 20 in close contact with the pressure-sensitive adhesive layer 12 of the exposing dicing tape 10 On the other hand, a tensile stress generated in the dicing tape 10 acts in a portion opposed to the dividing grooves between the semiconductor chips 31 in a state in which such deformation suppressing action does not occur. As a result, portions of the adhesive layer 20 opposed to the dividing grooves between the semiconductor chips 31 are cut off. After this step, as shown in Fig. 6 (c), the lifting member 43 is lowered, and the expanded state of the dicing tape 10 is released.

Next, under a relatively high temperature condition, the second expanding process is performed as shown in Fig. 7 (a), and the distance (spacing distance) between the semiconductor chips 31 with adhesive layers is extended. In this process, the hollow cylinder-shaped push-up member 43 provided in the expand apparatus is raised again, and the dicing tape 10 of the dicing die-bonding film X is expanded. The temperature condition in the second expansion step is, for example, 10 DEG C or more, and preferably 15 to 30 DEG C. [ The expansion speed (the speed at which the lifting member 43 ascends) in the second expanding process is, for example, 0.1 to 10 mm / sec, preferably 0.3 to 1 mm / sec. The expanding amount in the second expanding step is, for example, 3 to 16 mm. The separation distance of the adhesive layer-attached semiconductor chip 31 can be increased to such an extent that the semiconductor chip 31 with an adhesive layer can be properly picked up from the dicing tape 10 in the pickup process to be described later. After this step, as shown in Fig. 7 (b), the lifting member 43 is lowered and the expanded state on the dicing tape 10 is released. In order to suppress the narrowing of the separation distance of the semiconductor chip 31 with adhesive layer on the dicing tape 10 after releasing the expanded state, It is preferable to heat and shrink the portion of the outer side of the holding region 31.

Next, a cleaning step of cleaning the side of the semiconductor chip 31 in the dicing tape 10 accompanying the adhesive-layer-attached semiconductor chip 31 by using a cleaning liquid such as water is optionally carried out. As shown in the figure, the semiconductor chip 31 with an adhesive layer is picked up from the dicing tape 10 (pickup step). For example, the pin member 44 of the pick-up mechanism is raised and diced through the dicing tape 10 on the lower side of the figure of the dicing tape 10 with respect to the semiconductor chip 31 with the adhesive layer to be picked up And then adsorbed and held by the adsorption jig 45. In the pick-up process, the pushing-up speed of the pin member 44 is, for example, 1 to 100 mm / second, and the push-up amount of the pin member 44 is, for example, 50 to 3000 탆.

9 (a), the semiconductor chip 31 with the adhesive layer picked up is temporarily fixed to the predetermined adherend 51 via the adhesive layer 21. Then, as shown in Fig. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive force at 25 캜 at the time of temporary fixing of the adhesive layer 21 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 51. The structure in which the adhesive layer 21 has a shear adhesive strength of 0.2 MPa or more is a method of bonding the adhesive layer 21 to the semiconductor chip 31 or the adherend 51 by ultrasonic vibration or heating in a wire- It is suitable for suppressing the occurrence of shear deformation in the surface and appropriately performing wire bonding. The shear adhesive force at 175 占 폚 at the time of temporary fixing of the adhesive layer 21 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa with respect to the adherend 51.

Next, as shown in FIG. 9B, a terminal portion (not shown) of an electrode pad (not shown) of the semiconductor chip 31 and an adherend 51 is electrically connected through a bonding wire 52 (Wire bonding process). Wiring between the electrode pad of the semiconductor chip 31 and the terminal portion of the adherend 51 and the bonding wire 52 is realized by ultrasonic welding accompanied by heating and is performed so that the adhesive layer 21 is not thermally cured. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature in the wire bonding is, for example, 80 to 250 占 폚, preferably 80 to 220 占 폚. Further, the heating time is from several seconds to several minutes.

9 (c), the semiconductor chip 31 is bonded to the semiconductor chip 31 by the sealing resin 53 for protecting the semiconductor chip 31 and the bonding wire 52 on the adherend 51. Next, (Sealing step). In this step, the adhesive layer 21 is thermally cured. In this step, the encapsulating resin 53 is formed by a transfer molding technique using, for example, a mold. As the constituent material of the sealing resin 53, for example, an epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 占 폚, and the heating time is, for example, 60 seconds to several minutes. In the case where the curing of the sealing resin 53 does not proceed sufficiently in this step (sealing step), a post-curing step for completely curing the sealing resin 53 after the present step is performed. The adhesive layer 21 can be completely thermally cured together with the sealing resin 53 in the post-curing step even when the adhesive layer 21 is not completely thermally cured in the sealing step. In the post-curing process, the heating temperature is, for example, 165 to 185 占 폚, and the heating time is, for example, 0.5 to 8 hours.

As described above, a semiconductor device can be manufactured.

In the present embodiment, as described above, after the semiconductor chip 31 with an adhesive layer is temporarily fixed to the adherend 51, the wire bonding process is performed without the adhesive layer 21 reaching full thermal curing. Instead of such a configuration, in the present invention, after the semiconductor chip 31 with an adhesive layer is temporarily fixed to the adherend 51, the wire bonding process may be performed after the adhesive layer 21 is thermally cured.

In the semiconductor device manufacturing method according to the present invention, the wafer thinning step shown in Fig. 10 may be performed instead of the wafer thinning step described above with reference to Fig. 4 (d). In the wafer thinning step shown in Fig. 10 after the above-described process is performed with reference to Fig. 4 (c), in a state in which the semiconductor wafer W is held on the wafer processing tape T2, The semiconductor wafer divided body 30B which is thinned by grinding from the two faces Wb and held on the wafer processing tape T2 including the plurality of semiconductor chips 31 is formed. In this step, a method (first method) of grinding the wafer until the dividing groove 30a itself is exposed on the second surface Wb side may be employed. In the step, A method of grinding the wafer up to a point before the grinding step and then generating a crack between the dividing groove 30a and the second face Wb by the action of a pressing force against the wafer from the rotating grindstone to form the semiconductor wafer divided body 30B A second method) may be employed. Depending on the method employed, the depth of the dividing groove 30a formed as described above with reference to Figs. 4A and 4B from the first surface Wa is appropriately determined. In Fig. 10, the dividing grooves 30a through the first method, or the dividing grooves 30a through the second method, and the cracks extending therefrom are schematically shown by bold lines. In the present invention, after the semiconductor wafer divided body 30B thus manufactured is bonded to the dicing die bonding film X in place of the semiconductor wafer 30A, the respective steps described above with reference to Figs. 5 to 9 are performed .

Figs. 11A and 11B show a first expand process (a cool expansion process) performed after the semiconductor wafer divided body 30B is bonded to the dicing die bonding film X. Fig. In this process, the hollow cylinder-shaped push-up member 43 provided in the expanding device is lifted up against the dicing tape 10 at the lower side of the drawing of the dicing die bonding film X, The dicing tape 10 of the dicing die-bonding film X to which the semiconductor wafer 30B is bonded is stretched so as to extend in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B. This expanse is performed under the condition that a tensile stress is generated in the dicing tape 10 within a range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa. The temperature condition in this step is, for example, 0 deg. C or less, preferably -20 to -5 deg. C, more preferably -15 to -5 deg. C, and more preferably -15 deg. The expand speed (the speed at which the lifting member 43 ascends) in this step is preferably 1 to 500 mm / sec. The exponent amount in this step is preferably 50 to 200 mm. By this cooling expansion process, the adhesive layer 20 of the dicing die-bonding film X is cut into the adhesive layer 21 of the small piece, and the semiconductor chip 31 with the adhesive layer is obtained. Specifically, in this step, the semiconductor chips 31 of the semiconductor wafer divided body 30B in the adhesive layer 20 adhering to the pressure sensitive adhesive layer 12 of the exposing dicing tape 10 are brought into close contact with each other The deformation of the dicing tape 10 is suppressed in the regions where the dicing tape 10 is formed while the deformation is suppressed in the regions where the dicing tape 10 is in contact with the dividing grooves 30a between the semiconductor chips 31. [ Stress is applied. As a result, portions opposed to the division grooves 30a between the semiconductor chips 31 in the adhesive layer 20 are cut off.

In the semiconductor device manufacturing method according to the present invention, instead of the above-described configuration in which the semiconductor wafer 30A or the semiconductor wafer divided body 30B is bonded to the dicing die bonding film X, the semiconductor wafer 30C ) May be bonded to the dicing die-bonding film X.

As shown in Figs. 12 (a) and 12 (b), first, a modified region 30b is formed in a semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the side of the first surface Wa of the semiconductor wafer W, and a wiring structure (not shown) necessary for the semiconductor element is already formed on the first surface Wa. In this step, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T3, and the laser beam Is irradiated to the semiconductor wafer W from the side opposite to the wafer T3, along the line to be divided, and the modified region 30b is formed in the semiconductor wafer W by ablation by multiphoton absorption. The modified region 30b is a weakening region for separating the semiconductor wafer W into semiconductor chips. A method of forming a modified region 30b on a line to be divided by laser light irradiation in a semiconductor wafer is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370, The light irradiation condition is suitably adjusted within the range of, for example, the following conditions.

≪ Laser irradiation condition >

(A) Laser light

Laser light source Semiconductor laser excitation Nd: YAG laser

wavelength 1064 nm

Laser light spot cross-sectional area 3.14 x 10 < ^-8 >

Rash type Q switch pulse

Repetition frequency 100 kHz or less

Pulse width 1 ㎲

Print 1mJ or less

Laser light quality TEM00

Polarization characteristic Linear polarization

(B) a condenser lens

Magnification 100 times or less

NA 0.55

Transmittance to laser light wavelength 100% or less

(C) The moving speed of the loading table on which the semiconductor substrate is loaded 280 mm / sec or less

Next, as shown in Fig. 12 (c), in a state in which the semiconductor wafer W is held on the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until the semiconductor wafer W reaches a predetermined thickness Whereby a semiconductor wafer 30C that can be separated into a plurality of semiconductor chips 31 is formed (wafer thinning step). In the present invention, the semiconductor wafer 30C manufactured as described above may be bonded to the dicing die bonding film X in place of the semiconductor wafer 30A, and then each of the steps described above with reference to Figs. 5 to 9 may be performed .

Figs. 13A and 13B show a first expand process (cool expansion process) performed after the semiconductor wafer 30C is bonded to the dicing die bonding film X. Fig. In this process, the hollow cylinder-shaped push-up member 43 provided in the expanding device is raised against the dicing tape 10 at the lower side of the drawing of the dicing die bonding film X, and the semiconductor wafer 30C Of the dicing die-bonding film X is stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expanse is performed under the condition that a tensile stress is generated in the dicing tape 10 within a range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa. The temperature condition in this step is, for example, 0 deg. C or less, preferably -20 to -5 deg. C, more preferably -15 to -5 deg. C, and more preferably -15 deg. The expand speed (the speed at which the lifting member 43 ascends) in this step is preferably 1 to 500 mm / sec. The exponent amount in this step is preferably 50 to 200 mm. By this cooling expansion process, the adhesive layer 20 of the dicing die-bonding film X is cut into the adhesive layer 21 of the small piece, and the semiconductor chip 31 with the adhesive layer is obtained. Specifically, in this step, a crack is formed in the weakened modified region 30b of the semiconductor wafer 30C, and the semiconductor chip 31 is fragmented. In this step, the semiconductor chips 31 of the semiconductor wafer 30C adhere closely to each other in the adhesive layer 20 adhering to the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded The tensile stress generated in the dicing tape 10 acts in a region where the deformation is suppressed in each region while the portion opposed to the crack formation portion of the wafer does not generate such deformation suppressing action. As a result, the portion of the adhesive layer 20 opposed to the portion where cracks are formed between the semiconductor chips 31 is cut off.

Further, in the present invention, the dicing die-bonding film X can be used to obtain a semiconductor chip with an adhesive layer as described above. In the case where a plurality of semiconductor chips are laminated to form a three- It can also be used for obtaining an attached semiconductor chip. A spacer may be interposed with the adhesive layer 21 between the semiconductor chips 31 in such a three-dimensional mounting, or a spacer may not be interposed.

Example

[Example 1]

<Production of dicing tape>

(100 parts by mass) of dodecyl acrylate, 20 parts by mass of 2-hydroxyethyl acrylate (2HEA), and 100 parts by mass of these monomer components in a reaction vessel equipped with a thermometer, a condenser, A mixture containing 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 60 占 폚 for 10 hours under a nitrogen atmosphere (polymerization reaction). Thus, a polymer solution containing the acrylic polymer P ₁ was obtained. The weight average molecular weight (Mw) of the acrylic polymer P _{1 in} the polymer solution was 700,000. Then, a mixture of the polymer solution containing the acrylic polymer P ₁ , 2-methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst was reacted at 50 ° C. for 24 hours , And stirred in an air atmosphere (addition reaction). In the reaction solution, the amount of the MOI is, the acrylic acid dodecyl, and 20 molar parts with respect to 100 molar parts of thread, the molar ratio of that amount to the MOI 2HEA total amount of units derived to the hydroxyl group in the acrylic polymer P ₁ is 1. In addition, in the reaction solution, the blending amount of dibutyltin dilaurate is 0.03 parts by mass based on 100 parts by mass of the acrylic polymer P ₁ . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in its side chain was obtained. Then, 1 part by mass of a polyisocyanate compound (trade name: Coronate L, manufactured by Tosoh Corporation) and 2 parts by mass of a photopolymerization initiator (trade name: Irgacure 651 (trade name)) were added to the polymer solution in an amount of 1 part by mass based on 100 parts by mass of the acrylic polymer P ₂ , 2,2-dimethoxy-1,2-diphenylethan-1-one, manufactured by BASF) was added and mixed, and the mixture was stirred at room temperature to have a viscosity of 500 mPa.s Toluene was added to dilute the solution to obtain a pressure-sensitive adhesive solution. Subsequently, a pressure-sensitive adhesive solution was applied onto the silicone release-treated surface of a PET separator (having a thickness of 38 mu m) having a surface subjected to the silicon release treatment to form a coating film, and the coating film was heated and dried at 130 DEG C for 2 minutes And a pressure-sensitive adhesive layer having a thickness of 10 mu m was formed on the PET separator. Subsequently, a substrate made of ethylene-vinyl acetate copolymer (EVA) (trade name: "RB-0104", thickness: 130 μm, manufactured by Kurashiki Boshiki Co., Ltd.) was applied to the exposed surface of the pressure-sensitive adhesive layer using a laminator at room temperature Respectively. Thus, the dicing tape of Example 1 was produced.

&Lt; Preparation of adhesive layer &

Acrylic resin A ₁ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight: 1,200,000, glass transition temperature: 0 占 폚, epoxy weight: 0.4eq / kg) 63 parts by weight 1 part by mass of a solid phenol resin (trade name "MEHC-7851SS", solid at 23 ° C, manufactured by Meiwa Kasei Kogyo Co., Ltd.) and a liquid phenol resin (trade name "MEH- ) And 30 parts by mass of a silica filler (trade name &quot; SO-C2 &quot;, average particle diameter: 0.5 mu m, manufactured by Admatechs Co., Ltd.) were added and mixed in methyl ethyl ketone, The concentration was adjusted so that the viscosity became 700 mPa, to obtain an adhesive composition. Subsequently, an adhesive composition was applied onto the silicone release-treated surface of a PET separator (having a thickness of 38 mu m) having a surface subjected to the silicon release treatment to form a coating film, and the coating film was heated and dried at 130 DEG C for 2 minutes . In this manner, the adhesive layer (thickness 10 mu m) in Example 1 was formed on the PET separator.

<Production of dicing die-bonding film>

After separating the PET separator from the dicing tape described above, the pressure-sensitive adhesive layer exposed on the dicing tape and the above-mentioned adhesive layer carrying the separator were bonded at room temperature using a laminator to obtain a laminated sheet body. Subsequently, the laminated sheet body was subjected to a punching process in which the cutting edge was pushed in from the EVA base material side of the dicing tape to the separator. Thus, a disc-shaped dicing die-bonding film having a diameter of 370 mm was formed on the separator. Then, the pressure sensitive adhesive layer in the dicing tape was irradiated with ultraviolet rays from the side of the substrate. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the irradiated light quantity was set to 350 mJ / cm 2. Thus, a dicing die-bonding film of Example 1 having a laminated structure including a dicing tape and an adhesive layer was produced.

[Example 2]

Instead of 63 parts by mass of the acrylic resin A ₁ , 70 parts by mass of the acrylic resin A ₁ , and 7 parts by mass of the liquid phenol resin (trade name: MEH-8000H, manufactured by Meiwa Kasei K.K.) instead of 6 parts by mass , And the amount of the silica filler (trade name "SO-C2" manufactured by Admatech Co., Ltd.) was changed to 22 parts by mass instead of 30 parts by mass, the adhesive of Example 2 Layer (thickness 10 mu m) was formed on a PET separator. Then, a dicing die-bonding film of Example 2 was produced in the same manner as in Example 1 except that the adhesive layer in Example 2 was used instead of the adhesive layer in Example 1.

[Example 3]

A blending amount of acrylic resin A ₁ of 90 parts by mass instead of 63 parts by mass and a blending amount of solid phenol resin (trade name: MEHC-7851SS, manufactured by Meiwa Kasei K. K.) were changed to 2 parts by mass instead of 1 part by mass , 8 parts by mass of a liquid phenol resin (trade name: MEH-8000H, manufactured by Meiwa Kasei K.K.) instead of 6 parts by mass and a silica filler (trade name: SO-C2, available from Showa Denko KK) (Thickness: 10 mu m) in Example 3 was formed on a PET separator in the same manner as in the adhesive layer of Example 1 except that the adhesive layer of Example 3 was not used. Then, a dicing die-bonding film of Example 3 was produced in the same manner as in the dicing die-bonding film of Example 1 except that the adhesive layer in Example 3 was used instead of the adhesive layer in Example 1. [

[Comparative Example 1]

Instead of 63 parts by mass of the acrylic resin A ₁ , 48 parts by mass of the acrylic resin A ₁ , and 6 parts by mass of the solid phenol resin (trade name: MEHC-7851SS, manufactured by Meiwa Kasei K.K.) instead of 1 part by mass , A liquid phenol resin (trade name "MEH-8000H", manufactured by Meiwa Kasei K.K.), and a silica filler (trade name "SO-C2" manufactured by Admatechs Co., Ltd.) (Thickness: 10 mu m) in Comparative Example 1 was formed on a PET separator in the same manner as in Example 1 except that the adhesive layer was changed to 46 parts by mass instead of the adhesive layer. A dicing die-bonding film of Comparative Example 1 was produced in the same manner as in the dicing die-bonding film of Example 1 except that the adhesive layer in Comparative Example 1 was used instead of the adhesive layer in Example 1. [

[Comparative Example 2]

Instead of the acrylic resin A ₁ 63 parts by mass of the acrylic resin A ₂ (trade name "para Crohn W-116.3", the acrylic ester-based polymer, the weight average molecular weight of the thermoplastic has to 900,000, and a glass transition temperature of -22 ℃, you are right or wrong US schools Ltd.) was used instead of the adhesive layer of Example 1 except that 63 parts by mass of the adhesive layer was used. A dicing die-bonding film of Comparative Example 2 was produced in the same manner as in the dicing die-bonding film of Example 1, except that the adhesive layer in Comparative Example 2 was used in place of the adhesive layer in Example 1.

[Tensile storage elastic modulus of adhesive layer]

Based on the dynamic viscoelasticity measurement carried out by using a dynamic viscoelasticity measuring apparatus (trade name: "Rheogel-E4000", manufactured by UBM Co., Ltd.) for each of the adhesive layers in Examples 1 to 3 and Comparative Examples 1 and 2, The tensile storage elastic modulus and the tensile storage elastic modulus at 23 [deg.] C were obtained. The sample piece provided for the dynamic viscoelasticity measurement was prepared by laminating each adhesive layer with a thickness of 80 mu m and then cut out from the laminate to a size of 4 mm wide x 20 mm long. In this measurement, the initial chuck distance of the sample piece holding chuck was set to 10 mm, the measurement mode was set to the tensile mode, the measurement temperature range was set to -30 ° C to 100 ° C, the frequency was set to 10 Hz, The deformation was made to be 0.5 mu m and the temperature raising rate was 5 DEG C / min. The obtained tensile storage elastic modulus at -15 ° C and the tensile storage elastic modulus at 23 ° C are shown in Table 1.

&Lt; Adhesion of adhesive layer >

With respect to the adhesive layer in each of the dicing die-bonding films of Examples 1 to 3 and Comparative Examples 1 and 2, 180 deg. Peel adhesion at -15 deg. C was examined as follows. First, the adhesive layer was peeled off from the dicing tape, and a reinforcing tape (trade name &quot; BT-315 &quot;, manufactured by Nitto Denko Kabushiki Kaisha) was bonded to the side of the adhesive layer which was adhered to the dicing tape, A sample piece (10 mm wide × 100 mm long) was cut out from the reinforcing film. Then, the sample piece and the adherend were pressed together by a compression bonding operation in which the sample piece was joined to the SUS plate as the adherend and the 2 kg roller was reciprocated one time. After leaving for 30 minutes at room temperature, 180 ° peel adhesion of the adhesive layer sample piece to the SUS plate was measured using a tensile tester (trade name "Autograph AGS-J" manufactured by Shimadzu Seisakusho Co., Ltd.) Respectively. In this measurement, the measurement temperature to the peeling temperature was -15 DEG C, the tensile angle was 180 DEG, and the tensile speed was 300 mm / min. In the tensile test, the average value of the following peeling force, excluding the peeling force indicated by the first 10 mm, was taken as 180 peel adhesion (N / 10 mm). In addition, the adhesive layer in each of the dicing die-bonding films of Examples 1 to 3 and Comparative Examples 1 and 2 had a 180 ° peel adhesion strength at -15 캜, except that the measurement temperature was set at 23 캜 instead of -15 캜 The 180 占 peel adhesion at 23 占 폚 was measured in the same manner as in the measurement. The results of these measurements are shown in Table 1.

<Frame retention at 23 ° C>

Each of the dicing die-bonding films of Examples 1 to 3 and Comparative Examples 1 and 2 was examined for adhesion and retention of the ring frame at 23 占 폚 in the following manner. First, a 12-inch diameter SUS ring frame (manufactured by Kabushiki Kaisha Disco) was bonded to the adhesive layer side of the dicing die-bonding film using a bonding apparatus (MA-3000II, manufactured by Nitto Seimitsu Kikai K.K.) . This bonding was performed under conditions of a bonding speed of 10 mm / sec and a temperature of 60 ° C. Thereafter, the sample was stored in a case in a horizontal state and allowed to stand at 23 占 폚 for one week. Then, the peeling of the ring frame from the adhesive layer was confirmed. The case where the peeling of the ring frame did not occur was evaluated as good (O), and the case where the peeling of the ring frame occurred was evaluated as poor (X). The evaluation results are shown in Table 1.

<Frame retention at -15 ° C>

Each of the dicing die-bonding films of Examples 1 to 3 and Comparative Examples 1 and 2 was examined for adhesiveness and retention at -15 占 폚 of the ring frame in the following manner. First, a 12-inch-diameter SUS ring frame (manufactured by Kabushiki Kaisha Disco) was bonded to the adhesive layer side of the dicing die-bonding film using a bonding apparatus (MA-3000II, manufactured by Nitto Seimitsu Kikai K.K.) . This bonding was performed under conditions of a bonding speed of 10 mm / sec and a temperature of 60 ° C. Thereafter, a dicing die-bonding film with a ring frame was held in a horizontal state in a wafer cassette of a die separating apparatus (trade name &quot; DYE SEPARATOR DDS3200 &quot;, manufactured by DISCO Corporation), left at -15 DEG C for one week . In a cassette for accommodating a dicing die-bonding film with a ring frame, a holding portion provided in the cassette abuts on the ring frame to hold the dicing die-bonding film with the ring frame, and the dicing die- Is not in direct support of the user. Then, the peeling of the ring frame from the adhesive layer was confirmed. The case where the peeling of the ring frame did not occur was evaluated as good (O), and the case where the peeling of the ring frame occurred was evaluated as poor (X). The evaluation results are shown in Table 1.

[Disintegration in the Cool Expend process (-15 캜)]

Using the respective dicing die-bonding films of Examples 1 to 3 and Comparative Example 1, the following bonding process, the first expand process (cool expansion process) for separation and the second expansion process for separation (Room temperature expansion process).

In the bonding step, the semiconductor wafer divided body held by a wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko KK) is bonded to the adhesive layer of the dicing die bonding film, The wafer processing tape was peeled off. In the bonding, a laminator was used, the bonding speed was 10 mm / sec, the temperature condition was 60 ° C, and the pressure condition was 0.15 MPa. The semiconductor wafer divided body is prepared and prepared as follows. First, a bare wafer (12 inches in diameter, 780 탆 thick, manufactured by Tokyo Kako K.K.) in a state held with a ring frame on a wafer processing tape (trade name "V12S-R2-P", manufactured by Nitto Denko Corporation) (Width: 25 mu m, depth: 50 mu m, one section: 6 mm) by means of a dicing machine (trade name "DFD6260" manufactured by Disco Co., Ltd.) from the side of one side thereof, × 12 mm) was formed. Subsequently, a wafer processing tape (trade name: "UB-3083D", manufactured by Nitto Denko K.K.) was bonded to the dividing groove forming surface, and the above wafer processing tape (trade name "V12S-R2-P" . Thereafter, by using a back grinding machine (trade name: DGP8760, manufactured by Disco Co., Ltd.), the wafer was grinded from the side of the other side of the wafer And then mirror-finished with respect to the grinding surface was carried out by using the dry-polishing method using the apparatus. As described above, the semiconductor wafer divided body (in a state held on the wafer processing tape) was formed. This semiconductor wafer divided body includes a plurality of semiconductor chips (6 mm x 12 mm).

The Cool Expansion process was carried out in the Cool Expand Unit using a Die Separating Device (trade name: Dye Separator DDS3200, manufactured by Disco Co., Ltd.). Specifically, first, a 12-inch-diameter SUS ring frame (having a diameter of 12 inches) was attached to the frame adhesion area (around the work adhesion area) of the adhesive layer in the above-described dicing die- Manufactured by Kaisha Disco Co., Ltd.) was attached at room temperature. Subsequently, the dicing die-bonding film was set in the apparatus, and a dicing tape of a dicing die-bonding film accompanied by a semiconductor wafer divider was expanded in a cool expand unit of the apparatus. In this cooling expansion process, the temperature is -15 占 폚, the expanding speed is 100 mm / sec, and the expanding amount is 7 mm.

The room temperature expanding process was performed in a room temperature expanding unit using a die separating apparatus (trade name &quot; Dye separator DDS3200 &quot;, manufactured by Disco Corporation). More specifically, the dicing tape of the dicing die-bonding film accompanied by the above-described semiconductor wafer divided body subjected to the Cool Expansion process was expanded in the room temperature expanding unit of the above apparatus. In this room-temperature expanding step, the temperature is 23 占 폚, the expanding speed is 1 mm / sec, and the expanding amount is 10 mm. Thereafter, the dicing die-bonding film passed through the room temperature expander was subjected to heat shrink treatment. The treatment temperature is 200 占 폚, and the treatment time is 20 seconds.

The steps of the dicing die-bonding films of Examples 1 to 3 and Comparative Example 1 were carried out in the same manner as above, and the number of the divided adhesive layers with respect to the total number of semiconductor chips included in the semiconductor wafer divided body was And the ratio of the total number of semiconductor chips accompanying it was examined. When the ratio of the adhesive layer was 80% or more, it was evaluated as good (O), and when the ratio was less than 80%, the adhesive layer was evaluated as poor (). The evaluation results are shown in Table 1.

[evaluation]

The dicing die-bonding films of Examples 1 to 3 exhibited satisfactory results with respect to the frame retention at room temperature and the frame retentivity and rigidity at the Cool Expansion process (-15 캜). On the contrary, in the dicing die-bonding film of Comparative Example 1, since the tensile storage modulus of the adhesive layer was too high, the ring frame could not be held in the adhesive layer even at -15 占 폚 or 23 占 폚. The cooling expansion process using the dicing die-bonding film of Comparative Example 1 could not be carried out. Further, in the dicing die-bonding film of Comparative Example 2, since the tensile storage modulus of the adhesive layer was too low, the adhesive layer could not be sufficiently removed in the process of the cooling extrusion.

X: Dicing die-bonding film
10: Dicing tape
11: substrate
11e: outer peripheral end
12: pressure-sensitive adhesive layer
12e: outer peripheral end
20, 21: adhesive layer
20e: outer peripheral end
W, 30A, and 30C: semiconductor wafers
30B: Semiconductor wafer parted body
30a: Split groove
30b: modified region
31: Semiconductor chip

Claims (10)

A dicing tape having a laminated structure including a substrate and a pressure-sensitive adhesive layer;
And an adhesive layer in close contact with the pressure-sensitive adhesive layer in the dicing tape so as to be peelable,
The adhesive layer was stretched at -15 占 폚 at an initial chuck distance of 10 mm, a frequency of 10 Hz, a dynamic strain of 占 .5 占 퐉, and a temperature raising rate of 5 占 폚 / min, Wherein the elastic modulus is 1000 to 4000 MPa and the tensile storage elastic modulus at 23 DEG C measured under the above conditions is 10 to 240 MPa. The method according to claim 1,
Wherein the adhesive layer exhibits a 180 deg. Peel adhesive strength of at least 1 N / 10 mm with respect to the SUS plane in a peeling test under the conditions of -15 deg. C, a peeling angle of 180 deg. And a tensile rate of 300 mm / min. The method according to claim 1,
Wherein the adhesive layer exhibits 180 DEG peel adhesion strength of 0.3 N / 10 mm or more with respect to the SUS plane in a peeling test under the conditions of 23 DEG C, a peeling angle of 180 DEG and a tensile rate of 300 mm / min. 3. The method of claim 2,
Wherein the adhesive layer exhibits 180 DEG peel adhesion strength of 0.3 N / 10 mm or more with respect to the SUS plane in a peeling test under the conditions of 23 DEG C, a peeling angle of 180 DEG and a tensile rate of 300 mm / min. The method according to claim 1,
Wherein the adhesive layer comprises a polymer having a glass transition temperature of -10 to 10 占 폚. 5. The method of claim 4,
Wherein the adhesive layer comprises a polymer having a glass transition temperature of -10 to 10 占 폚. The method according to claim 1,
Wherein the adhesive layer contains a filler in a proportion of 30 mass% or less. The method according to claim 1,
Wherein the adhesive layer contains a high molecular weight component in a proportion of 50 to 100 mass%. The method according to claim 1,
Wherein the adhesive layer contains a liquid resin in a proportion of 1 to 10 mass%. 11. The method according to any one of claims 1 to 10,
Wherein the substrate comprises an ethylene-vinyl acetate copolymer.

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