JP6445315B2 - Dicing sheet, dicing die-bonding film, and semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to a dicing sheet, a dicing die bond film, and a method for manufacturing a semiconductor device.

  As shown in FIGS. 13 and 14, a dicing die bond having a base material 911 and a dicing sheet 901 having an adhesive layer 912 disposed on the base material 911 and an adhesive layer 903 disposed on the adhesive layer 912. Regarding the manufacturing technology of the semiconductor device using the film 910, by bonding the wafer 904 having the semiconductor elements 905A, 905B, 905C,..., 905H and the modified region 941 to the adhesive layer 903 and expanding the dicing sheet 901 A method of dividing the wafer 904 and the adhesive layer 903 starting from the modified region 941 is known (see, for example, Patent Documents 1 and 2).

JP 2002-192370 A JP 2003-338467 A

  As shown in FIG. 15, the peripheral portion 912b sags after unfolding. If the slack in the peripheral portion 912b is left unattended, the semiconductor elements 905A and 905B, the semiconductor elements 905B and 905C,..., May contact the semiconductor elements 905G and 905H.

  An object of the present invention is to provide a dicing sheet that solves the above-described problems and can remove sagging and prevent contact between semiconductor elements.

  The present invention relates to a dicing sheet that shrinks when heated at 100 ° C. for 1 minute, and whose second length in the MD direction after heating is 95% or less with respect to the first length in the MD direction before heating of 100%. . Since the second length is 95% or less with respect to the first length of 100%, sagging can be removed by heating, and contact between the semiconductor elements can be prevented.

The dicing sheet of the present invention preferably has the following properties. That is, the tensile stress when stretched by 3% in the MD direction at 23 ° C. is 1 N / mm ² or more. When it is 1 N / mm ² or more, an appropriate tensile stress is applied at the time of cleaving the semiconductor wafer, so that the semiconductor wafer can be cleaved and the semiconductor elements can be spaced apart.

The dicing sheet of the present invention preferably has the following properties. That is, the tensile stress when stretched 6% in the MD direction at 23 ° C. is 1.5 N / mm ² or more. When it is 1.5 N / mm ² or more, an appropriate tensile stress is applied at the time of cleaving the semiconductor wafer, so that the semiconductor wafer can be cleaved and the semiconductor elements can be spaced apart.

  The thickness of the dicing sheet of the present invention is preferably 40 μm to 200 μm. The dicing sheet of the present invention usually comprises a base material and an adhesive layer disposed on the base material.

  The present invention also relates to a dicing die-bonding film including a dicing sheet and an adhesive layer disposed on the pressure-sensitive adhesive layer. The glass transition temperature of the adhesive layer is preferably 0 ° C. or higher. Preferably, the pressure-sensitive adhesive layer includes a central portion in contact with the adhesive layer and a peripheral portion disposed around the central portion.

  The present invention also includes a step of preparing the divided body, a step of dividing the divided wafer and the adhesive layer from the modified region by expanding the dicing sheet, and a step of dividing the divided wafer and the adhesive layer. And a step of heating a peripheral portion later. The divided body includes a dicing die-bonding film and a divided wafer disposed on the adhesive layer. The divided wafer has a modified region.

It is a schematic sectional drawing of a dicing sheet. It is a schematic sectional drawing of a dicing die-bonding film. It is a schematic perspective view of the process of forming a modification area | region inside a semiconductor wafer with a laser beam. It is a schematic sectional drawing of a division wafer. It is a schematic sectional drawing of a laminated body. It is a schematic sectional drawing of a laminated body. It is a schematic sectional drawing of the process of expanding a laminated body. It is a schematic sectional drawing of a division structure. It is a schematic sectional drawing of the process of expanding a division structure. It is a schematic sectional drawing of a division structure. It is a schematic sectional drawing of the to-be-adhered body with a semiconductor element. It is a schematic sectional drawing of the to-be-adhered body with a semiconductor element. It is a schematic sectional drawing of the wafer etc. which are arrange | positioned on a dicing die-bonding film and a dicing die-bonding film. It is a schematic sectional drawing of the process of parting a wafer and an adhesive bond layer by extending a dicing sheet. It is schematic sectional drawing, such as a dicing sheet. It is a schematic perspective view of a test piece.

  The present invention will be described in detail below with reference to embodiments, but the present invention is not limited only to these embodiments.

[Embodiment 1]
(Dicing sheet 1)
As shown in FIG. 1, the dicing sheet 1 includes a base material 11 and an adhesive layer 12 arranged on the base material 11.

  The dicing sheet 1 has the following properties. That is, it shrinks by heating at 100 ° C. for 1 minute, and the second length in the MD direction after heating is 95% or less with respect to the first length 100% in the MD (Machine Direction) direction before heating. The second length is preferably 96% or less with respect to the first length of 100%. On the other hand, the second length is, for example, 50% or more with respect to the first length of 100%.

  The value of the ratio of the second length to the first length can be controlled by the material of the base material 11 and the film forming method of the base material 11. Especially, the influence which the film forming method of the base material 11 has on the value of the ratio of the second length to the first length is great. For example, by stretching the substrate 11, the value of the ratio of the second length to the first length can be reduced.

The dicing sheet 1 preferably has the following properties. That is, the tensile stress when stretched by 3% in the MD direction at 23 ° C. is preferably 1 N / mm ² or more. When it is 1 N / mm ² or more, an appropriate tensile stress is applied at the time of cleaving the semiconductor wafer, so that the semiconductor wafer can be cleaved and the semiconductor elements can be spaced apart. In addition, the distance between the semiconductor elements can be maintained. The upper limit of the tensile stress when extending 3% in the MD direction at 23 ° C. is, for example, 15 N / mm ² .

The dicing sheet 1 preferably has the following properties. That is, the tensile stress when stretched 6% in the MD direction at 23 ° C. is preferably 1.5 N / mm ² or more. When it is 1.5 N / mm ² or more, an appropriate tensile stress is applied at the time of cleaving the semiconductor wafer, so that the semiconductor wafer can be cleaved and the semiconductor elements can be spaced apart. In addition, the distance between the semiconductor elements can be maintained. The upper limit of the tensile stress when extending 6% in the MD direction at 23 ° C. is, for example, 20 N / mm ² .

  The thickness of the dicing sheet 1 is preferably 40 μm or more, more preferably 60 μm or more. On the other hand, the thickness of the dicing sheet 1 is preferably 200 μm or less, more preferably 180 μm or less.

  When the thickness of the dicing sheet 1 is 100%, the thickness of the substrate 11 is preferably 50% or more, more preferably 70% or more. On the other hand, the thickness of the base material 11 is preferably 98% or less, more preferably 95% or less.

  Examples of the substrate 11 include a polyethylene terephthalate film, a polyethylene film, a polystyrene film, a polypropylene film, a polyamide film, a polyurethane film, a polyvinylidene chloride film, a polyvinyl chloride film, an ethylene vinyl acetate copolymer film, and an ethylene-acrylic acid ester. A copolymer film, a polyvinyl chloride film, etc. are mentioned.

  As the substrate 11, an unstretched film, a uniaxially stretched film, a biaxially stretched film, or the like can be used. Among these, an unstretched film is preferable because it has no anisotropy.

  Examples of the structure of the substrate 11 include a single layer and a multilayer.

  The surface of the base material 11 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

  It does not restrict | limit especially as an adhesive used for formation of the adhesive layer 12, For example, common pressure sensitive adhesives, such as an acrylic adhesive and a rubber adhesive, can be used. As pressure-sensitive adhesives, acrylic adhesives based on acrylic polymers are used as the base polymer from the standpoint of cleanability of electronic components that are difficult to contaminate such as semiconductor wafers and glass with organic solvents such as ultrapure water and alcohol. preferable.

  Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, isopropyl ester). Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, C1-C30, especially C4-C18 linear or branched alkyl esters of alkyl groups such as octadecyl ester and eicosyl ester) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, etc. One or acrylic polymer using two or more of the monomer component cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. May be. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Sti Contains sulfonic acid groups such as sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalene sulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is cross-linked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, it is preferable that the content of the low molecular weight substance is small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

  In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight with respect to 100 parts by weight of the base polymer. Furthermore, additives such as various conventionally known tackifiers and anti-aging agents may be used for the pressure-sensitive adhesive, if necessary, in addition to the above components.

  The pressure-sensitive adhesive layer 12 can be formed of a radiation curable pressure-sensitive adhesive. The radiation curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of crosslinking by irradiation with radiation such as ultraviolet rays.

  As the radiation curable pressure-sensitive adhesive, those having a radiation curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. Examples of the radiation curable pressure-sensitive adhesive include an addition-type radiation curable pressure-sensitive adhesive in which a radiation-curable monomer component or oligomer component is blended with a general pressure-sensitive pressure-sensitive adhesive such as the acrylic pressure-sensitive adhesive or rubber-based pressure-sensitive adhesive. An agent can be illustrated.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight in the range of about 100 to 30000 are suitable. The compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of a base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type radiation curable adhesive described above, the radiation curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain or main chain or at the main chain terminal as a base polymer. Intrinsic radiation curable pressure sensitive adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so the oligomer components do not move through the adhesive over time and are stable. It is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, the carbon-carbon double bond can be easily introduced into the polymer side chain for easy molecular design. . For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the intrinsic radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfo Aromatic sulfonyl chloride compounds such as luchloride; Photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  Examples of the radiation curable pressure-sensitive adhesive include photopolymerizable compounds such as an addition polymerizable compound having two or more unsaturated bonds and an alkoxysilane having an epoxy group disclosed in JP-A-60-196956. And rubber-based pressure-sensitive adhesives and acrylic pressure-sensitive adhesives containing photopolymerization initiators such as carbonyl compounds, organic sulfur compounds, peroxides, amines, and onium salt-based compounds.

  The radiation curable pressure-sensitive adhesive layer 12 may contain a compound that is colored by radiation irradiation, if necessary. By including a compound to be colored in the pressure-sensitive adhesive layer 12 by irradiation with radiation, only the irradiated portion can be colored. The compound that is colored by irradiation with radiation is a colorless or light color compound before irradiation with radiation, but becomes a color by irradiation with radiation, and examples thereof include leuco dyes. The use ratio of the compound colored by radiation irradiation can be set as appropriate.

(Dicing die bond film 10)
As shown in FIG. 2, the dicing die-bonding film 10 includes a dicing sheet 1 and an adhesive layer 3 disposed on the pressure-sensitive adhesive layer 12.

  The pressure-sensitive adhesive layer 12 includes a central portion 12a in contact with the adhesive layer 3 and a peripheral portion 12b disposed around the central portion 12a. The central portion 12a is a portion cured by radiation irradiation.

  The adhesive layer 3 has thermosetting properties.

  The glass transition temperature of the adhesive layer 3 is preferably 0 ° C. or higher, more preferably 10 ° C. or higher. When the temperature is 0 ° C. or higher, the adhesive layer 3 can be easily divided in a low temperature (for example, 0 ° C. or lower) environment. The upper limit of the glass transition temperature of the adhesive layer 3 is, for example, 100 ° C.

  The glass transition temperature of the adhesive layer 3 can be controlled by the glass transition temperature of the acrylic resin.

  The adhesive layer 3 preferably includes a thermoplastic resin. As thermoplastic resins, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity Examples thereof include polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

  The acrylic resin is not particularly limited, and includes one or more esters of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. And a polymer (acrylic copolymer). Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, and dodecyl group.

  In addition, the other monomer forming the polymer (acrylic copolymer) is not particularly limited, and for example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid Or a carboxyl group-containing monomer such as crotonic acid, an acid anhydride monomer such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (meth ) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4 -Hydroxymethylcyclo Hydroxyl group-containing monomers such as (xyl) -methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate Alternatively, a sulfonic acid group-containing monomer such as (meth) acryloyloxynaphthalene sulfonic acid or the like, or a phosphoric acid group-containing monomer such as 2-hydroxyethylacryloyl phosphate may be used.

  Among the acrylic resins, those having a weight average molecular weight of 100,000 or more are preferable, those having 300,000 to 3,000,000 are more preferable, and those having 500,000 to 2,000,000 are more preferable. It is because it is excellent in adhesiveness and heat resistance in the said numerical range. The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.

  The adhesive layer 3 preferably includes a thermosetting resin. Thereby, thermal stability can be improved.

  Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. In particular, an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  The epoxy resin is not particularly limited. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type. Bifunctional epoxy resins such as ortho-cresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., and epoxy resins such as hydantoin type, trisglycidyl isocyanurate type, or glycidylamine type are used. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance.

  The phenol resin acts as a curing agent for the epoxy resin. For example, a novolak type phenol resin such as a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, a nonylphenol novolak resin, or a resol type phenol resin. And polyoxystyrene such as polyparaoxystyrene. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The blending ratio of the epoxy resin and the phenol resin is preferably blended so that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured product are likely to deteriorate.

  When the adhesive layer 3 contains an epoxy resin, a phenol resin, and an acrylic resin, the total content of the epoxy resin and the phenol resin is preferably 100 parts by weight to 1300 parts by weight with respect to 100 parts by weight of the acrylic resin.

  When the adhesive layer 3 is previously crosslinked to some extent, it is preferable to add a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer as a crosslinking agent. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  A conventionally well-known thing can be employ | adopted as a crosslinking agent. In particular, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, adducts of polyhydric alcohol and diisocyanate are more preferable. The addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it include other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.

  In addition, an inorganic filler can be appropriately blended in the adhesive layer 3 according to its use. The blending of the inorganic filler makes it possible to impart conductivity, improve thermal conductivity, adjust the elastic modulus, and the like. Examples of inorganic fillers include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina oxide, beryllium oxide, silicon carbide, silicon nitride and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead, Examples thereof include various inorganic powders made of metals such as tin, zinc, palladium, solder, or alloys, and other carbon.

  The adhesive layer 3 preferably includes a thermosetting catalyst. The content of the thermosetting catalyst is preferably 0.01 to 3 parts by weight and more preferably 0.05 to 1 part by weight with respect to 100 parts by weight of the acrylic resin.

  The thermosetting catalyst is not particularly limited, and examples thereof include imidazole compounds, triphenylphosphine compounds, amine compounds, triphenylborane compounds, and trihalogenborane compounds.

  Examples of imidazole compounds include 2-methylimidazole (trade name; 2MZ), 2-undecylimidazole (trade name; C11Z), 2-heptadecylimidazole (trade name; C17Z), and 1,2-dimethylimidazole (trade name). 1.2DMZ), 2-ethyl-4-methylimidazole (trade name; 2E4MZ), 2-phenylimidazole (trade name; 2PZ), 2-phenyl-4-methylimidazole (trade name; 2P4MZ), 1-benzyl 2-methylimidazole (trade name; 1B2MZ), 1-benzyl-2-phenylimidazole (trade name; 1B2PZ), 1-cyanoethyl-2-methylimidazole (trade name; 2MZ-CN), 1-cyanoethyl-2- Undecylimidazole (trade name; C11Z-CN), 1-cyanoethyl-2 Phenylimidazolium trimellitate (trade name; 2PZCNS-PW), 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine (trade name; 2MZ-A), 2,4-diamino-6- [2′-undecylimidazolyl- (1 ′)]-ethyl-s-triazine (trade name; C11Z-A), 2,4-diamino-6- [2′-ethyl- 4′-Methylimidazolyl- (1 ′)]-ethyl-s-triazine (trade name; 2E4MZ-A), 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s -Triazine isocyanuric acid adduct (trade name; 2MA-OK), 2-phenyl-4,5-dihydroxymethylimidazole (trade name; 2PHZ-PW), 2-phenyl-4-methyl-5-hydroxy Methylimidazole (trade name; 2P4MHZ-PW), and the like (all made by Shikoku Kasei Co., Ltd.).

  The triphenylphosphine compound is not particularly limited, and examples thereof include triorganophosphine such as triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyltolylphosphine, and the like. , Tetraphenylphosphonium bromide (trade name; TPP-PB), methyltriphenylphosphonium (trade name; TPP-MB), methyltriphenylphosphonium chloride (trade name; TPP-MC), methoxymethyltriphenylphosphonium (trade name; TPP-MOC), benzyltriphenylphosphonium chloride (trade name; TPP-ZC), and the like (all manufactured by Hokuko Chemical Co., Ltd.).

  The triphenylborane compound is not particularly limited, and examples thereof include tri (p-methylphenyl) phosphine. The triphenylborane compound further includes those having a triphenylphosphine structure. The compound having the triphenylphosphine structure and the triphenylborane structure is not particularly limited. For example, tetraphenylphosphonium tetraphenylborate (trade name; TPP-K), tetraphenylphosphonium tetra-p-triborate (trade name; (TPP-MK), benzyltriphenylphosphonium tetraphenylborate (trade name; TPP-ZK), triphenylphosphine triphenylborane (trade name; TPP-S), and the like (all manufactured by Hokuko Chemical Co., Ltd.).

  The amino compound is not particularly limited, and examples thereof include monoethanolamine trifluoroborate (manufactured by Stella Chemifa Corporation), dicyandiamide (manufactured by Nacalai Tesque Corporation), and the like.

  It does not specifically limit as a trihalogen borane type compound, For example, a trichloroborane etc. are mentioned.

  The adhesive layer 3 can be appropriately mixed with other additives as necessary. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide.

  The adhesive layer 3 can be manufactured by a normal method. For example, an adhesive composition solution containing each of the above components is prepared, and the adhesive composition solution is applied on a base separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried. Thus, the adhesive layer 3 can be manufactured.

  Although it does not specifically limit as a solvent used for adhesive composition solution, The organic solvent which can melt | dissolve, knead | mix or disperse | distribute each said component uniformly is preferable. Examples thereof include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like. The application method is not particularly limited. Examples of the solvent coating method include a die coater, a gravure coater, a roll coater, a reverse coater, a comma coater, a pipe doctor coater, and screen printing. Of these, a die coater is preferable in terms of high uniformity of coating thickness.

  As the base material separator, polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper whose surface is coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent can be used. Examples of the method for applying the adhesive composition solution include roll coating, screen coating, and gravure coating. Moreover, the drying conditions of a coating film are not specifically limited, For example, it can carry out in drying temperature 70-160 degreeC and drying time 1-5 minutes.

  As a method for producing the adhesive layer 3, for example, a method of producing the adhesive layer 3 by mixing the respective components with a mixer and press-molding the obtained mixture is also suitable. A planetary mixer etc. are mentioned as a mixer.

  Although the thickness of the adhesive bond layer 3 is not specifically limited, 5 micrometers or more are preferable and 15 micrometers or more are more preferable. The thickness of the adhesive layer 3 is preferably 100 μm or less, and more preferably 50 μm or less.

  The adhesive layer 3 can be used as a die attach film for bonding an adherend such as a lead frame and a semiconductor element. Examples of the adherend include a lead frame, an interposer, and a semiconductor element.

  The adhesive layer 3 is preferably protected by a separator (not shown). The separator has a function as a protective material that protects the adhesive layer 3 until it is put to practical use. The separator is peeled off when the semiconductor wafer is attached to the adhesive layer 3. As the separator, it is also possible to use polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper whose surface is coated with a release agent such as a fluorine release agent or a long-chain alkyl acrylate release agent.

  The dicing die bond film 10 can be manufactured by a normal method. For example, the dicing die-bonding film 10 can be manufactured by bonding the dicing sheet 1 and the adhesive layer 3 together.

  The dicing die bond film 10 can be used for manufacturing a semiconductor device.

(Method for manufacturing semiconductor device)
As shown in FIG. 3, the condensing point is aligned inside the semiconductor wafer 4P, and the laser beam 100 is irradiated along the lattice-shaped division planned line 4L, thereby forming the modified region 41 inside the semiconductor wafer 4P. Thereby, the divided wafer 4 is obtained.

The irradiation conditions of the laser beam 100 can be adjusted as appropriate within the range of the following conditions, for example.
(A) Laser beam 100
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross-sectional area 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse
Repeat frequency 100 kHz or less
Pulse width 1μs or less
Output 1mJ or less
Laser light quality TEM00
Polarization characteristics Linearly polarized light (B) Condensing lens
Magnification 100 times or less
NA 0.55
Transmittance with respect to laser light wavelength: 100% or less (C) Moving speed of placing table on which semiconductor wafer is placed 280 mm / second or less

Note that the method of forming the modified region 41 by the irradiation of laser light 100, since they are described in detail in Patent No. 3,408,805 No. etc. Gazette, detailed description is to be omitted.

  As shown in FIG. 4, the divided wafer 4 includes a modified region 41. The divided wafer 4 further includes semiconductor elements 5A, 5B, 5C,.

  Both sides of the divided wafer 4 are defined by the front surface (Otemen) and the back surface facing the front surface. The surface is a surface on which a circuit is provided. On the other hand, the back surface is a surface on which no circuit is provided.

  The back surface of the divided wafer 4 is ground to thin the divided wafer 4.

  As shown in FIG. 5, the divided wafer 4 is pressure-bonded to the adhesive layer 3 to obtain a laminated body 21. The laminate 21 includes the dicing die bond film 10 and the divided wafer 4 disposed on the adhesive layer 3.

  As shown in FIG. 6, a dicing ring 31 is attached to the peripheral portion 12b.

As shown in FIG. 7, the dicing sheet 1 is expanded by raising the push-up portion 33 disposed below the laminated body 21, and the divided wafer 4 and the adhesive layer 3 are divided from the modified region 41 as a starting point. Thereby, the division | segmentation structure 51 provided with chip | tip 2A, 2B, 2C, ..., 2H for die bonding arrange | positioned on the dicing sheet 1 and the adhesive layer 12 is obtained. The die bonding chip 2A includes an adhesive film 22A and a semiconductor element 5A disposed on the adhesive film 22A. The die bonding chip 2B includes an adhesive film 22B and a semiconductor element 5B arranged on the adhesive film 22B. The die bonding chip 2C includes an adhesive film 22C and a semiconductor element 5C disposed on the adhesive film 22C. The die bonding chip 2D includes an adhesive film 22D and a semiconductor element 5D arranged on the adhesive film 22D. The die bonding chip 2E includes an adhesive film 22E and an adhesive film 22
A semiconductor element 5E disposed on E is provided. The die-bonding chip 2F includes an adhesive film 22F and a semiconductor element 5F disposed on the adhesive film 22F. The die-bonding chip 2G includes an adhesive film 22G and a semiconductor element 5G disposed on the adhesive film 22G. The die bonding chip 2H includes an adhesive film 22H and a semiconductor element 5H disposed on the adhesive film 22H. The adhesive films 22A, 22B, 22C,..., 22H are in contact with the pressure-sensitive adhesive layer 12.

  Preferably, the dicing sheet 1 is expanded at 10 ° C. or less. More preferably, the expansion is performed at 0 ° C. or less. The adhesive bond layer 3 can be parted easily as it is 0 degrees C or less. The minimum of temperature is not specifically limited, For example, it is -20 degreeC.

  The speed at which the push-up portion 33 rises is preferably 0.1 mm / second or more, more preferably 1 mm / second or more. If it is 0.1 mm / second or more, it can be easily divided. On the other hand, the upper limit of the expanding speed is not particularly limited.

  As shown in FIG. 8, the push-up portion 33 is lowered. When the push-up portion 33 is lowered, sagging occurs in the peripheral portion 12b.

  As shown in FIG. 9, the dicing sheet 1 is expanded by raising the suction table 32 disposed below the divided structure 51, and the dicing sheet 1 is sucked by the suction table 32 while maintaining the expansion.

  As shown in FIG. 10, the suction table 32 is lowered while sucking the dicing sheet 1 with the suction table 32.

  While sucking the dicing sheet 1 with the suction table 32, hot air is applied to the peripheral portion 12b. It is possible to remove slack by applying hot air to the peripheral portion 12b, and contact between the die bonding chip 2A and the die bonding chip 2B, the die bonding chip 2B and the die bonding chip 2C, ..., the contact between the die bonding chip 2G and the die bonding chip 2H Can be prevented.

  The temperature of the hot air is preferably 220 ° C. or higher, more preferably 250 ° C. or higher. The peripheral part 12b can be easily contracted as it is 220 degreeC or more. On the other hand, the hot air is heated at a temperature of preferably 400 ° C. or lower, more preferably 300 ° C. or lower. When the temperature is 400 ° C. or lower, the dicing sheet 1 can be prevented from being damaged.

  Next, when the pressure-sensitive adhesive layer 12 is an ultraviolet curable type, the pressure-sensitive adhesive layer 12 is cured by irradiating the pressure-sensitive adhesive layer 12 with ultraviolet rays. Thereby, the adhesive force with respect to the chip | tip 2 for die-bonding of the adhesive layer 12 can be reduced. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary. When the pressure-sensitive adhesive layer 12 is not an ultraviolet curable type, it is not necessary to irradiate the pressure-sensitive adhesive layer 12 with ultraviolet rays.

  The die bonding chip 2A is picked up. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, there is a method of pushing up the die bonding chip 2A with a needle and picking up the pushed up die bonding chip 2A with a pickup device.

  As shown in FIG. 11, the die bonding chip 2 </ b> A is pressure-bonded to the adherend 6 to obtain an adherend 61 with a semiconductor element. The adherend 61 with a semiconductor element includes an adherend 6, an adhesive film 22 </ b> A disposed on the adherend 6, and a semiconductor element 5 </ b> A disposed on the adhesive film 22 </ b> A.

  The pressure bonding temperature is preferably 80 ° C. or higher, more preferably 90 ° C. or higher. The pressure bonding temperature is preferably 150 ° C. or lower, more preferably 130 ° C. or lower.

  Subsequently, the adhesive film 22 </ b> A is thermally cured by heating the adherend 61 with a semiconductor element, and the semiconductor element 5 </ b> A is fixed to the adherend 6.

  In addition, it is preferable to thermoset the adhesive film 22A by heating the adherend 61 with a semiconductor element under pressure. By thermally curing the adhesive film 22A under pressure, voids existing between the adhesive film 22A and the adherend 6 can be easily eliminated.

Examples of the method of heating under pressure include a method of heating the adherend 61 with a semiconductor element arranged in a chamber filled with an inert gas.
The pressure of the pressurized atmosphere is preferably 0.5 kg / cm ² (4.9 × 10 ⁻² MPa) or more, more preferably 1 kg / cm ² (9.8 × 10 ⁻² MPa) or more, and further preferably 5 kg. / Cm ² (4.9 × 10 ⁻¹ MPa) or more. If it is 0.5 kg / cm ² or more, voids existing between the adhesive film 22A and the adherend 6 can be easily eliminated. The pressure of the pressurized atmosphere is preferably 20kg ^/ cm 2 (1.96MPa), more preferably 18kg ^/ cm 2 (1.77MPa) or less, more preferably not more than 15kg ^/ cm 2 (1.47MPa). The protrusion of the adhesive film 22A due to excessive pressurization can be suppressed as it is 20 kg / cm ² or less.

  The heating temperature when heating under pressure is preferably 80 ° C or higher, more preferably 100 ° C or higher, still more preferably 120 ° C or higher, and particularly preferably 170 ° C or higher. When the temperature is 80 ° C. or higher, the adhesive film 22A can have an appropriate hardness, and voids can be effectively eliminated by pressure curing. The heating temperature is preferably 260 ° C. or lower, more preferably 200 ° C. or lower, more preferably 180 ° C. or lower. When the temperature is 260 ° C. or lower, the adhesive film 22A can be prevented from being decomposed.

  The heating time is preferably 0.1 hour or longer, more preferably 0.2 hour or longer, and further preferably 0.5 hour or longer. When it is 0.1 hour or longer, the effect of pressurization can be sufficiently obtained. The heating time is preferably 24 hours or less, more preferably 3 hours or less, and even more preferably 1 hour or less.

  As shown in FIG. 12, a wire bonding step is performed in which the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor element 5 </ b> A are electrically connected by a bonding wire 7. As the bonding wire 7, for example, a gold wire, an aluminum wire or a copper wire is used. The temperature during wire bonding is preferably 80 ° C. or higher, more preferably 120 ° C. or higher, and the temperature is preferably 250 ° C. or lower, more preferably 175 ° C. or lower. The heating time is several seconds to several minutes (for example, 1 second to 1 minute). The connection is performed by a combination of vibration energy by ultrasonic waves and pressure energy by pressurization while being heated so as to be within the temperature range.

  Subsequently, a sealing step of sealing the semiconductor element 5 </ b> A with the sealing resin 8 is performed. This step is performed to protect the semiconductor element 5 </ b> A and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is preferably 165 ° C. or higher, more preferably 170 ° C. or higher, and the heating temperature is preferably 185 ° C. or lower, more preferably 180 ° C. or lower.

  If necessary, further heating may be performed after sealing (post-curing step). Thereby, the sealing resin 8 which is insufficiently cured in the sealing process can be completely cured. The heating temperature can be set as appropriate.

(Modification 1)
In the first modification, the semiconductor wafer 4P is pressure-bonded to the dicing die-bonding film 10. Next, the modified region 41 is formed inside the semiconductor wafer 4 </ b> P disposed on the dicing die bond film 10 to obtain the divided wafer 4.

(Modification 2)
In Modification 2, the wire bonding step is performed without thermosetting the adhesive film 22A.

(Modification 3)
The peripheral part 12b is a part cured by radiation irradiation.

(Modification 4)
The central portion 12a is a portion that is not cured by radiation irradiation.

  As described above, the manufacturing method of the semiconductor device according to the first embodiment is a process of preparing the divided body 21 including the dicing die bond film 10 and the divided wafer 4 including the modified region 41 disposed on the adhesive layer 3. Then, by expanding the dicing sheet 1, after the step of dividing the divided wafer 4 and the adhesive layer 3 from the modified region 41 and the step of dividing the divided wafer 4 and the adhesive layer 3, the peripheral portion 12 b Heating. The manufacturing method of the semiconductor device of Embodiment 1 further includes a step of pressure bonding the die bonding chip 2A obtained by the step of dividing the divided wafer 4 and the adhesive layer 3 to the adherend 6 and the like.

  The step of preparing the divided body 21 includes a step of forming the divided wafer 4. The step of forming the divided wafer 4 includes a step of forming the modified region 41 inside the semiconductor wafer 4P by irradiating the laser beam 100 along the planned division line 4L.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to a following example, unless the summary is exceeded.

[Base material]
The base materials A to G used in Examples and Comparative Examples will be described. Table 1 shows the thicknesses of the substrates A to G.
Base material A: Fanclaire NRB # 115 (ethylene vinyl acetate copolymer film) manufactured by Gunze
Base material B: Fanclaire NRB # 135 (ethylene vinyl acetate copolymer film) manufactured by Gunze
Base material C: PE-5 (ethylene-acrylic acid ester copolymer film) manufactured by Aussie Film
Base material D: HL film (polyvinyl chloride film) manufactured by Ron Seal Industry Co., Ltd.
Substrate E: PP-1 (polypropylene film) manufactured by Aussie Film
Base material F: Polypropylene (80%) polyethylene (20%) two-layer film Base material G: Polypropylene (80%) polyethylene (20%) two-layer film

[Production of dicing die bond film]
Example 1
In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirring device, 86.4 parts of acrylate-2-ethylhexyl acrylate (hereinafter also referred to as “2EHA”), 2-hydroxyethyl acrylate ( Hereinafter, it is also referred to as “HEA”.) 13.6 parts, 0.2 part of benzoyl peroxide, and 65 parts of toluene are put into a nitrogen gas stream and polymerized at 61 ° C. for 6 hours to obtain acrylic polymer B. Obtained. 14.6 parts of 2-methacryloyloxyethyl isocyanate (hereinafter also referred to as “MOI”) is added to the acrylic polymer B, followed by an addition reaction treatment at 50 ° C. for 48 hours in an air stream, and the acrylic polymer B ′. Got. For 100 parts of acrylic polymer B ′, 2 parts of polyisocyanate compound (trade name “Coronate L”, manufactured by Nippon Polyurethane Co., Ltd.) and photopolymerization initiator (trade name “Irgacure 651”, Ciba Specialty Chemicals) 5 parts) was added to obtain an adhesive composition solution. The pressure-sensitive adhesive composition solution was applied on a release treatment film and dried by heating at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 30 μm. Subsequently, the base material A was bonded to the pressure-sensitive adhesive layer. Thereafter, ultraviolet light was irradiated at 400 mJ / cm ^{2 on} the portion of the pressure-sensitive adhesive layer where a 12 inch wafer was to be attached, and cured by ultraviolet light. The obtained dicing sheet has the adhesive layer arrange | positioned on the base material A and the base material A. FIG.

  An acrylic resin, epoxy resin A, epoxy resin B, phenol resin, silica, and catalyst were dissolved in methyl ethyl ketone at a ratio shown in Table 2 to prepare an adhesive composition solution having a concentration of 40 to 50% by weight.

Details of each component are as follows.
Acrylic resin: SG-708-6 (Tg: 4 ° C.) manufactured by Nagase ChemteX Corporation
Epoxy resin A: KI-3000 (solid) manufactured by Tohto Kasei Co., Ltd.
Epoxy resin B: JER YL980 (liquid) manufactured by Mitsubishi Chemical Corporation
Phenol resin: MEH-7800H (solid) manufactured by Meiwa Kasei Co., Ltd.
Silica: SE-2050MC manufactured by Admatechs Co., Ltd. (average particle size: 0.5 μm)
Catalyst: TPP-K manufactured by Hokuko Chemical Co., Ltd.

  The prepared adhesive composition solution was applied to a 50 μm-thick polyethylene terephthalate film subjected to silicone release treatment, and then dried at 130 ° C. for 2 minutes to prepare an adhesive coating film having a thickness of 30 μm. A circular adhesive layer having a diameter of 330 mm was cut out from the adhesive coating film.

  A dicing die-bonding film was produced by laminating a circular adhesive layer to the pressure-sensitive adhesive layer.

(Example 2)
A dicing die-bonding film was produced in the same manner as in Example 1 except that the base material B was used instead of the base material A.

Example 3
A dicing die-bonding film was produced in the same manner as in Example 1 except that the substrate C was used instead of the substrate A.

(Example 4)
A dicing die-bonding film was produced in the same manner as in Example 1 except that the substrate D was used instead of the substrate A.

(Comparative Example 1)
A dicing die-bonding film was produced in the same manner as in Example 1 except that the substrate E was used instead of the substrate A.

(Comparative Example 2)
A dicing die-bonding film was produced in the same manner as in Example 1 except that the base material F was used instead of the base material A.

(Comparative Example 3)
A dicing die-bonding film was produced in the same manner as in Example 1 except that the base material G was used instead of the base material A.

[Evaluation 1]
The following evaluation was performed on the dicing sheet. The results are shown in Table 1.

(Heat shrinkage)
A dicing sheet was obtained by removing the adhesive layer from the dicing die-bonding film. A strip-shaped test piece 500 having a length of 150 mm in the MD direction and a width of 25 mm was cut out from the dicing sheet. As shown in FIG. 16, two marked lines 501a and 501b were put in the test piece 500 at an interval of 100 mm. The test piece 500 was suspended from the basket 502, and the test piece 500 was heated at 100 ° C. for 1 minute with a dryer. After cooling, the distance between the two marked lines 501a and 501b was measured, and the heat shrinkage rate was determined by the following formula.
Heat shrinkage rate = distance between marked lines after heating / distance between marked lines before heating × 100

(3% tensile stress)
A dicing sheet was obtained by removing the adhesive layer from the dicing die-bonding film. A strip-shaped measurement piece having a length of 150 mm in the MD direction and a width of 25 m was cut out from the dicing sheet. Using a tensile tester (Autograph, manufactured by Shimadzu Corporation), a tensile test was performed under the conditions of 23 ° C., a tensile speed of 300 mm / min, and a distance between chucks of 100 mm. I read it.

(6% tensile stress)
A dicing sheet was obtained by removing the adhesive layer from the dicing die-bonding film. A strip-shaped measurement piece having a length of 150 mm in the MD direction and a width of 25 m was cut out from the dicing sheet. Using a tensile tester (Autograph, manufactured by Shimadzu Corporation), a tensile test was performed under the conditions of 23 ° C., a tensile speed of 300 mm / min, and a distance between chucks of 100 mm. I read it.

[Evaluation 2]
The following evaluation was performed using a dicing die-bonding film. The results are shown in Table 1.

(Initial pickup success rate)
Using a laser processing device manufactured by Tokyo Seimitsu Co., Ltd., ML300-Integration, the focusing point is aligned with the interior of a 12 inch semiconductor wafer, and the surface of the semiconductor wafer (10 mm × 10 mm) along the planned dividing line (10 mm × 10 mm) Otemen) or laser light was irradiated from the back side to form a modified region inside the semiconductor wafer. Thereafter, a protective tape for back grinding was bonded to the surface of the semiconductor wafer, and the back surface was ground using a disco back grinder DGP8760 so that the thickness of the semiconductor wafer was 30 μm. The laser light irradiation conditions are shown below.
(A) Laser light
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross-sectional area 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse
Repetition frequency 100kHz
Pulse width 30ns
Output 20μJ / pulse
Laser light quality TEM00 40
Polarization characteristics Linearly polarized light (B) Condensing lens
50 times magnification
NA 0.55
60% transmittance for laser wavelength
(C) The moving speed of the mounting table on which the semiconductor substrate is placed 100 mm / sec. After the semiconductor wafer and the dicing ring that have been pre-processed with laser light are bonded to the dicing die-bonding film, the die separator DDS2300 manufactured by DISCO Corporation is used. A sample was obtained by cleaving the semiconductor wafer and heat shrinking the dicing sheet. That is, first, the semiconductor wafer was cleaved by a cool expander unit under the conditions of an expanding temperature of −15 ° C., an expanding speed of 200 mm / second, and an expanding amount of 12 mm.
Then, the sample was obtained by heat-shrinking the dicing sheet with a heat expander unit under the conditions of an expansion amount of 10 mm, a heat temperature of 250 ° C., an air volume of 40 L / min, a heat distance of 20 mm, and a rotation speed of 3 ° / sec. The sample was subjected to pickup evaluation using a die bonder SPA-300 manufactured by Shinkawa Co., Ltd. That is, the operation of pushing up the die bonding chip having an adhesive layer in contact with the semiconductor chip and the semiconductor chip 100 times under the conditions of an expansion amount of 3 mm, a needle number of 9, a needle push-up amount of 400 μm, a push-up speed of 10 mm / sec, and a push-up time of 1 sec. By doing so, the number of successful pick-ups was evaluated.

(Pickup success rate after one week)
Samples were stored at 23 ° C. for 1 week, and then the number of successful pickups was evaluated in the same manner.

[Evaluation 3]
The following evaluation was performed on the adhesive layer. The results are shown in Table 2.

(Glass-transition temperature)
The adhesive layer was laminated to a thickness of 300 μm under the condition of 60 ° C., and then a strip-shaped measurement piece having a length of 30 mm and a width of 10 mm was cut out. Next, using a dynamic viscoelasticity measuring apparatus (RSA (II), manufactured by Rheometric Scientific), the storage elastic modulus and loss elastic modulus at −30 ° C. to 100 ° C. were measured as the distance between chucks of 22.5 mm, Measurement was performed under conditions of a frequency of 1 Hz and a heating rate of 10 ° C./min, and a glass transition temperature was obtained from the peak value of tan δ.

10 Dicing die bond film 1 Dicing sheet 2A, 2B, 2C, 2D, 2E, 2F, 2G, 2H Die bonding chip 3 Adhesive layer 4P Semiconductor wafer 4L Divided line 4 Divided wafers 5A, 5B, 5C, 5D, 5E, 5F, 5G, 5H Semiconductor element 6 Substrate 7 Bonding wire 8 Sealing resin 11 Base material 12 Adhesive layer 12a Central part 12b Peripheral part 21 Laminated bodies 22A, 22B, 22C, 22D, 22E, 22F, 22G, 22H Adhesion Film 31 Dicing ring 32 Suction table 33 Push-up portion 41 Modified region 51 Divided structure 61 Substrate with semiconductor element 100 Laser beam

910 Dicing die bond film 901 Dicing sheet 903 Adhesive layer 904 Wafer 905A, 905B, 905C, 905D, 905E, 905F, 905G, 905H Semiconductor element 911 Base material 912 Adhesive layer 912b Peripheral part

Claims (8)

Shrinks by heating for 1 minute at 100 ° C., the second length of the MD direction after the heating the heating to the first length 100% of the previous MD direction Ri der less 95% 50% ,
The tensile stress when stretched by 3% in the MD direction at 23 ° C. is 1 N / mm ² or more,
The tensile stress when stretched 6% in the MD direction at 23 ° C. is 1.5 N / mm ² or more.
Dicing sheet.   The dicing sheet according to claim 1, wherein the thickness is 40 μm to 200 μm.   The dicing sheet according to claim 1, further comprising a base material and an adhesive layer disposed on the base material. Dicing sheet according to claim 3,
A dicing die-bonding film comprising: an adhesive layer disposed on the pressure-sensitive adhesive layer.   The dicing die-bonding film according to claim 4, wherein the adhesive layer has a glass transition temperature of 0 ° C. or higher.   The dicing die-bonding film according to claim 4, wherein the pressure-sensitive adhesive layer includes a central part in contact with the adhesive layer and a peripheral part disposed around the central part. Preparing a dicing die-bonding film, and a divided body provided with a divided wafer provided with a modified region, disposed on the adhesive layer;
Dividing the divided wafer and the adhesive layer from the modified region by expanding the dicing sheet; and
The dicing die-bonding film according to claim 6, wherein the dicing die-bonding film is used in a method for manufacturing a semiconductor device including a step of heating the peripheral portion after the step of dividing the divided wafer and the adhesive layer. Preparing a dicing die-bonding film according to claim 6 and a divided body provided on the adhesive layer and comprising a divided wafer having a modified region;
Dividing the divided wafer and the adhesive layer from the modified region by expanding the dicing sheet; and
And a step of heating the peripheral portion after the step of dividing the divided wafer and the adhesive layer.

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