CN108735650B

CN108735650B - Dicing die bonding film

Info

Publication number: CN108735650B
Application number: CN201810343654.2A
Authority: CN
Inventors: 木村雄大; 高本尚英; 大西谦司; 宍户雄一郎; 福井章洋; 大和道子; 井上真一
Original assignee: Nitto Denko Corp
Current assignee: Nitto Denko Corp
Priority date: 2017-04-17
Filing date: 2018-04-17
Publication date: 2023-08-04
Anticipated expiration: 2038-04-17
Also published as: KR20180116755A; CN108735650A

Abstract

A dicing die bonding film suitable for good dicing of an adhesive layer by an expanding process is provided. The dicing tape (10) and an adhesive layer (20) are provided. The dicing tape (10) has a laminated structure of a base material (11) and an adhesive layer (12), and the adhesive layer (20) is in close contact with the adhesive layer (12). The ratio of tensile stress generated at 30% strain value in a tensile test under the same conditions for a test piece (50 mm x 10 mm) cut from an outer region (R1) of DDAF from the outer peripheral end up to 20mm inward, to tensile stress generated at 30% strain value in a tensile test under the conditions of 20 mm-15 ℃ and 300 mm/min between initial clamps, is 0.9 to 1.1 for a test piece (50 mm x 10 mm) cut from an inner region (R2) of DDAF further inward than the outer region (R1) under the same conditions.

Description

Dicing die bonding film

Technical Field

The present invention relates to a dicing die bonding film that can be used in a manufacturing process of a semiconductor device.

Background

In the manufacturing process of a semiconductor device, a dicing die bonding film is sometimes used in order to obtain a semiconductor chip having an adhesive film for die bonding, that is, a semiconductor chip having an adhesive layer for die bonding, which has a size equivalent to that of a die. The dicing die bonding film has a size corresponding to a semiconductor wafer to be processed, and includes, for example: a dicing tape comprising a substrate and an adhesive layer; and a die-bonding film (adhesive layer) that is releasably adhered to the adhesive layer side thereof.

As one of methods for obtaining a semiconductor chip with an adhesive layer by using a dicing die bonding film, a method of cutting the die bonding film through a process for expanding a dicing tape in the dicing die bonding film is known. In this method, first, a semiconductor wafer is bonded to a die bonding film that is a dicing die bonding film. The semiconductor wafer is processed such that it can be singulated into a plurality of semiconductor chips by being cut together with the die bonding film, for example. Next, in order to sever the die-bonding film so that a plurality of adhesive film pieces each adhering to the semiconductor chip are generated from the die-bonding film on the dicing tape, the dicing tape of the dicing die-bonding film is stretched in two dimensions including the radial direction and the circumferential direction of the semiconductor wafer using the expanding device. In this expanding step, the semiconductor wafer on the die bonding film is also diced at a position corresponding to the dicing position in the die bonding film, and the semiconductor wafer is singulated into a plurality of semiconductor chips on the dicing die bonding film and/or dicing tape. Next, a second expanding step is performed to expand the distance between the plurality of semiconductor chips with adhesive layers after dicing on the dicing tape. Then, after the cleaning process, for example, the semiconductor chips are lifted up from the lower side of the dicing tape together with the chip bonding film having a size corresponding to the chips and adhered thereto by the needle members of the pick-up mechanism, and then the semiconductor chips are picked up from the dicing tape. In this manner, a semiconductor chip with an adhesive layer, which is a die bonding film, was obtained. The semiconductor chip with the adhesive layer is fixed to an adherend such as a mounting substrate by die bonding via the adhesive layer. For example, the related art of dicing a die-bonding film used as described above is described in, for example, patent documents 1 to 3 below.

Prior art literature

Patent literature

Patent document 1: japanese patent laid-open No. 2007-2173

Patent document 2: japanese patent application laid-open No. 2010-177401

Patent document 3: japanese patent application laid-open No. 2012-23161

Disclosure of Invention

Problems to be solved by the invention

Fig. 14 is a schematic cross-sectional view showing a conventional dicing die-bonding film Y. Dicing die bonding film Y includes dicing tape 60 and die bonding film 70. The dicing tape 60 has a laminated structure of a base material 61 and an adhesive layer 62 that exerts adhesive force. The die bonding film 70 is adhered to the adhesive layer 62 by the adhesive force of the adhesive layer 62. Such dicing die bonding film Y has a disk shape having a size corresponding to a semiconductor wafer as a processing object and/or a work in the manufacturing process of the semiconductor device, and can be used for the above-described expanding process. For example, as shown in fig. 15, the above-described expansion process is performed in a state in which the annular frame 81 is attached to the adhesive layer 62 and the semiconductor wafer 82 is attached to the die bonding film 70. The annular frame 81 is a frame member mechanically abutted when a conveying mechanism such as a conveying arm provided in the expanding device conveys the workpiece in a state of being attached to the dicing die bonding film Y. The conventional dicing die-bonding film Y is designed such that the ring frame 81 can be fixed to the film by the adhesive force of the adhesive layer 62 of the dicing tape 60. That is, the dicing die-bonding film Y of the related art has a design in which an annular frame bonding region is secured around the die-bonding film 70 in the adhesive layer 62 of the dicing tape 60. In such a design, the distance between the outer peripheral end 62e of the adhesive layer 62 and the outer peripheral end 70e of the die-bonding film 70 is about 10 to 30 mm.

In such a conventional dicing die bonding film Y, the region R1 'to which the annular frame 81 is bonded is different in lamination structure and thickness from the region R2' to which the semiconductor wafer 82 is bonded. In the dicing die bonding film Y, the difference in laminated structure and the difference in thickness may cause the uneven degree of elongation at the time of expansion. Specifically, in the region R1 'and the region R2' each having a different laminate structure and different thickness in the dicing die bonding film Y, the degree of stretching in the above-described stretching step for dicing is likely to be different. The region R1' (outside region) of the die bonding film Y has no die bonding film 70 in its laminated structure and is thinner than the region R2' located inside, and therefore is easier to extend than the region R2' in the expanding process. Further, the more uneven the degree of elongation of the dicing die-bonding film Y at the time of expansion, the more likely a defective dicing occurs, that is, a phenomenon in which the dicing is not performed at the predetermined position for dicing in the expansion step.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a dicing die bonding film suitable for satisfactorily cutting an adhesive layer by an expanding process.

Solution for solving the problem

The dicing die bonding film provided by the invention is provided with a dicing tape and an adhesive layer. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive layer is releasably adhered to the adhesive layer in the dicing tape. In the dicing die-bonding film, the ratio of the 2 nd tensile stress generated at a strain value of 30% in the tensile test performed on the 2 nd test piece under the conditions of 20mm, -15 ℃ and a tensile speed of 300 mm/min between the initial jigs to the 1 st tensile stress generated at a strain value of 30% in the tensile test performed on the 1 st test piece under the conditions of 20mm, -15 ℃ and a tensile speed of 300 mm/min between the initial jigs is 0.9 to 1.1, preferably 0.95 to 1.05. The dicing die bonding film having such a constitution can be used for obtaining a semiconductor chip with an adhesive layer in the manufacturing process of a semiconductor device. The length direction of the 1 st test piece cut from the dicing die-bonding film may be the so-called MD direction with respect to the dicing die-bonding film, or may be the TD direction perpendicular thereto, or may be other directions. The length direction of the 2 nd test piece cut from the dicing die-bonding film was set to be the same as the length direction of the 1 st test piece.

[ 1 st test piece ]

Test pieces having a length of 50mm and a width of 10mm extending in one direction, cut from an outer region of the dicing die-bonding film from the outer peripheral end up to 20mm inward

[ test piece 2 ]

Test piece having a length of 50mm and a width of 10mm extending in the one direction, cut from an inner side region of the dicing die-bonding film which is further inward than the outer side region

In the manufacturing process of the semiconductor device, as described above, in order to obtain the semiconductor chip with the adhesive layer, an expanding process using the dicing die bonding film, that is, an expanding process for dicing, may be performed, and in this expanding process, it is necessary to appropriately apply a dicing force to the die bonding film on the dicing tape, the semiconductor wafer, and other workpieces. In the dicing die-bonding film, the ratio of the 1 st tensile stress at-15 ℃ to the 2 nd tensile stress at-15 ℃ of the 2 nd test piece derived from the inner region of the same film with respect to the 1 st tensile stress of the 1 st test piece derived from the outer region of the film up to 20mm inward from the outer peripheral edge is 0.9 to 1.1, more preferably 0.95 to 1.05. Such a configuration is suitable for realizing the uniformity of the elongation degree of the dicing die bonding film including the outer region and the inner region in the low-temperature expansion step for dicing performed at-15 ℃ which is a temperature lower than room temperature and a temperature in the vicinity thereof. Therefore, the dicing die bonding film having such a configuration is suitable for making uniform the breaking force applied to the adhesive layer on the dicing tape and the work in the low-temperature expansion step, and is suitable for breaking them well.

The dicing die-bonding film having the uniform elongation degree obtained by the expansion in this way can be formed such that the dicing tape and/or the adhesive layer thereof and the adhesive layer thereon are designed to have substantially the same dimensions in the film in-plane direction so that the adhesive layer thereof includes the work bonding region and the frame bonding region. For example, a design may be adopted in which the outer peripheral ends of the adhesive layer are located at a distance of 1000 μm or less from the respective outer peripheral ends of the base material and the adhesive layer of the dicing tape in the in-plane direction of the dicing die-bonding film. The dicing die-bonding film of the present invention is suitable for performing processing for forming one dicing tape having a laminated structure of a base material and an adhesive layer and processing for forming one adhesive layer at a time by processing such as one-shot punching processing.

In the conventional process for producing the dicing die-bonding film Y, a process step (process step 1) for forming the dicing tape 60 of a predetermined size and shape and a process step (process step 2) for forming the die-bonding film 70 of a predetermined size and shape are required as separate steps. In the 1 st processing step, for example, a laminated sheet having a laminated structure of a predetermined separator, a base layer to be formed into the base 61, and an adhesive layer to be formed into the adhesive layer 62 between them is subjected to processing such that a processing blade reaches the separator from the base layer side. Thereby, the dicing tape 60 having the laminated structure of the adhesive layer 62 and the base material 61 on the separator is formed on the separator. In the 2 nd processing step, for example, processing is performed to insert a processing blade into the separator from the adhesive layer side, on a laminated sheet body having a laminated structure of a predetermined separator and an adhesive layer to be formed into the die bonding film 70. Thereby, the die bonding film 70 is formed on the spacer. Thereafter, dicing tape 60 and die bonding film 70 thus formed through separate processes are aligned and bonded. Fig. 16 shows a conventional dicing die bonding film Y having a spacer 83 covering the surface of the die bonding film 70 and the surface of the adhesive layer 62.

In contrast, the dicing die-bonding film of the present invention, in which the dicing tape and/or the adhesive layer thereof and the adhesive layer thereon have substantially the same design dimensions in the in-plane direction of the film, is suitable for performing processing for forming one dicing tape having a laminated structure of a base material and an adhesive layer and processing for forming one adhesive layer at a time by processing such as one punching process. Such a dicing die bonding film is suitable for cutting the adhesive layer well by the expansion step as described above, and is suitable for efficient production from the viewpoint of reducing the number of production steps, suppressing production costs, and the like.

The dicing die-bonding film preferably has a laminated structure as follows: comprises a substrate, an adhesive layer, and is continuous in the inner region and the outer region. Such a configuration is preferable in achieving the above-described excellent severance in the expanding step.

The thickness of the dicing die-bonding film is preferably the same in the inner region and the outer region. Such a configuration is preferable in achieving the above-described excellent severance in the expanding step.

The 1 st and 2 nd tensile stresses of the dicing die-bonding film are preferably 5N or more, more preferably 8N or more, and even more preferably 10N or more, from the viewpoint of ensuring a breaking force acting on the adhesive layer when the dicing die-bonding film is expanded at a temperature of-15 ℃ or the vicinity thereof. In addition, from the viewpoint of suppressing peeling between the adhesive layer and the adhesive layer of the dicing tape when the dicing tape is expanded at a temperature of-15 ℃ and around, the 1 st tensile stress and the 2 nd tensile stress of the dicing die-bonding film are preferably 28N or less, more preferably 25N or less, and still more preferably 20N or less.

The adhesive layer of the dicing die-bonding film exhibits a 180 DEG peel adhesion to SUS flat surface of preferably 1N/10mm or more, more preferably 1.5N/10mm or more, still more preferably 2N/10mm or more in peel test under conditions of-15 ℃ and a peel angle of 180 DEG and a tensile speed of 300 mm/min. Further, the adhesive layer exhibits 180 ° peel adhesion to the SUS plane of, for example, 100N/10mm or less, preferably 50N/10mm or less in peel test under the same conditions. This structure of the adhesive force is suitable for ensuring the holding of the frame member based on the dicing die-bonding film at-15 ℃ which is a temperature lower than room temperature and a temperature in the vicinity thereof.

In the dicing die-bonding film, the 3 rd tensile stress generated at a strain value of 30% in the tensile test performed on the 1 st test piece under the conditions of 20mm, 23 ℃ and a tensile speed of 300 mm/min between the initial jigs, and the 4 th tensile stress generated at a strain value of 30% in the tensile test performed on the 2 nd test piece under the conditions of 20mm, 23 ℃ and a tensile speed of 300 mm/min between the initial jigs are preferably 1N or more, more preferably 3N or more, further preferably 5N or more. Such a configuration is suitable for realizing uniformity of the degree of elongation of the dicing die-bonding film including the outer region and the inner region when it is expanded at a temperature of 23 ℃ and the vicinity thereof. After the dicing and expanding step, in order to widen the gap distance between the plurality of diced semiconductor chips with adhesive layers on the dicing tape, a further expanding step may be performed at room temperature, and the above-described configuration of the 3 rd and 4 th tensile stresses is suitable for realizing the uniformity of the elongation degree of the dicing chip bonding film in the room temperature expanding step. In addition, from the viewpoint of suppressing peeling between the adhesive layer and the adhesive layer of the dicing tape at the time of expansion at a temperature of 23 ℃ or in the vicinity thereof, the 3 rd tensile stress and the 4 th tensile stress of the dicing die-bonding film are preferably 20N or less, more preferably 15N or less, and still more preferably 10N or less.

The ratio of the 4 th tensile stress of the dicing die-bonding film to the 3 rd tensile stress is preferably 0.95 to 1.05. Such a configuration is suitable for realizing uniformity of the degree of elongation of the dicing die-bonding film including the outer region and the inner region when it is expanded at a temperature of 23 ℃ and the vicinity thereof.

The adhesive layer of the dicing die-bonding film exhibits a 180 DEG peel adhesion to SUS flat surface of preferably 0.1N/10mm or more, more preferably 0.3N/10mm or more, still more preferably 0.5N/10mm or more in a peel test under conditions of a peel angle of 180 DEG and a tensile speed of 300 mm/min at 23 ℃. Such a configuration is preferable for ensuring the holding of the frame member based on the dicing die-bonding film at a temperature of 23 ℃ and the vicinity thereof. Further, the adhesive layer exhibits 180 ° peel adhesion to the SUS plane of, for example, 20N/10mm or less, preferably 10N/10mm or less in peel test under the same conditions. Such a configuration is suitable for suppressing the generation of adhesive residues in a frame member such as a ring frame when the frame member is peeled from the adhesive layer of the dicing die bonding film.

Drawings

Fig. 1 is a schematic cross-sectional view of a dicing die-bonding film according to an embodiment of the invention.

Fig. 2 shows an example of the dicing die-bonding film shown in fig. 1 with a spacer.

Fig. 3 shows an example of a method for manufacturing the dicing die-bonding film shown in fig. 1.

Fig. 4 shows a part of the steps in the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1.

Fig. 5 shows a process subsequent to the process shown in fig. 4.

Fig. 6 shows a process subsequent to the process shown in fig. 5.

Fig. 7 shows a process subsequent to the process shown in fig. 6.

Fig. 8 shows a process subsequent to the process shown in fig. 7.

Fig. 9 shows a process subsequent to the process shown in fig. 8.

Fig. 10 shows a part of the steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1.

Fig. 11 shows a part of the steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1.

Fig. 12 shows a part of the steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1.

Fig. 13 shows a part of the steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in fig. 1.

Fig. 14 is a schematic cross-sectional view of a conventional dicing die-bonding film.

Fig. 15 shows a use of the dicing die-bonding film shown in fig. 14.

Fig. 16 shows a supply form of the dicing die-bonding film shown in fig. 14.

Description of the reference numerals

X-cut chip bonding film

R1, R1' outside region

R2, R2' inner region

10. Cutting belt

11. Substrate material

11e peripheral end

12. Adhesive layer

12e peripheral end

20 21 adhesive layer

20e peripheral end

W,30A,30C semiconductor wafer

30B semiconductor wafer separator

30a dividing groove

30b modified region

31. Semiconductor chip

Detailed Description

Fig. 1 is a schematic cross-sectional view of a dicing die-bonding film X according to an embodiment of the present invention. The dicing die-bonding film X has a laminated structure including the dicing tape 10 and the adhesive layer 20. The dicing tape 10 has a laminated structure including a base material 11 and an adhesive layer 12. The adhesive layer 20 is releasably adhered to the adhesive layer 12 of the dicing tape 10. The dicing die bonding film X can be used in, for example, an expanding process described later in a process of obtaining a semiconductor chip with an adhesive layer in the manufacture of a semiconductor device, and has a disk shape having a size corresponding to a workpiece such as a semiconductor wafer. The dicing die bonding film X has a diameter in the range of 345 to 380mm (12-inch wafer corresponding type), 245 to 280mm (8-inch wafer corresponding type), 195 to 230mm (6-inch wafer corresponding type), or 495 to 530mm (18-inch wafer corresponding type), for example.

The 1 st tensile stress generated when the die-bonding film X is cut at a strain value of 30% in a tensile test conducted on the 1 st test piece described below under conditions of 20 mm-15℃and a tensile speed of 300 mm/min between the initial jigs is preferably 5N or more, more preferably 8N or more, still more preferably 10N or more. The 2 nd tensile stress generated at a strain value of 30% in the tensile test conducted on the 2 nd test piece described below under the same conditions as described above (conditions of 20mm between the initial jigs, -15 ℃ C., and a tensile speed of 300 mm/min) is preferably 5N or more, more preferably 8N or more, and still more preferably 10N or more. These 1 st tensile stress and 2 nd tensile stress are each preferably 28N or less, more preferably 25N or less, and still more preferably 20N or less. Further, the ratio of the 2 nd tensile stress (-15 ℃) to the 1 st tensile stress (-15 ℃) is 0.9 to 1.1, preferably 0.95 to 1.05. The length direction of the 1 st test piece cut from the dicing die-bonding film X may be the so-called MD direction with respect to the dicing die-bonding film X, may be the TD direction perpendicular thereto, or may be other directions. The length direction of the 2 nd test piece cut from the dicing die-bonding film X was set to be the same as the length direction of the 1 st test piece. The tensile stress may be measured using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu corporation).

[ 1 st test piece ]

Test piece having a length of 50mm and a width of 10mm extending in one direction, cut from outer region R1 of dicing die-bonding film X from outer peripheral end up to 20mm inward

[ test piece 2 ]

Test piece having a length of 50mm and a width of 10mm extending in the one direction described above, cut by inner region R2 of dicing die-bonding film X which is located further inward than outer region R1

The 3 rd tensile stress generated at a strain value of 30% in the tensile test performed on the 1 st test piece under the conditions of 20mm,23 ℃ and a tensile speed of 300 mm/min between the initial jigs and the 4 th tensile stress generated at a strain value of 30% in the tensile test performed on the 2 nd test piece under the same conditions (conditions of 20mm,23 ℃ and a tensile speed of 300 mm/min between the initial jigs) are preferably 1N or more, more preferably 3N or more, and still more preferably 5N or more, respectively. These 3 rd tensile stress and 4 th tensile stress are each preferably 20N or less, more preferably 15N or less, and still more preferably 10N or less. The ratio of the 4 th tensile stress (23 ℃) to the 3 rd tensile stress (23 ℃) is preferably 0.95 to 1.05.

The base material 11 of the dicing tape 10 is a component that functions as a support in the dicing tape 10 and/or the dicing die-bonding film X. As the substrate 11, for example, a plastic substrate (particularly, a plastic film) can be suitably used. Examples of the constituent material of the plastic base material include: polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylene sulfide, aromatic polyamide, fluororesin, cellulose-based resin, and silicone resin. Examples of the polyolefin include: low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homo-polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer. Examples of the polyester include polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The base material 11 may be formed of one material or two or more materials. The substrate 11 may have a single-layer structure or a multilayer structure. From the viewpoint of ensuring good heat shrinkage of the base material 11 and maintaining the chip spacing distance achieved by the partitioning expansion step described later by local heat shrinkage of the dicing tape 10 and/or the base material 11, the base material 11 preferably contains ethylene-vinyl acetate copolymer as a main component. The main component of the base material 11 is a component that occupies the largest mass proportion among the constituent components. When the base material 11 is formed of a plastic film, it may be an unstretched film, a uniaxially stretched film, or a biaxially stretched film. When the pressure-sensitive adhesive layer 12 on the substrate 11 is ultraviolet-curable as will be described later, the substrate 11 preferably has ultraviolet-light transmittance.

When the dicing tape 10 and/or the base material 11 is shrunk by, for example, local heating at the time of use of the dicing die-bonding film X, for example, when the dicing tape 10 and/or the base material 11 is locally heat shrunk to maintain the chip spacing distance achieved by a dicing expansion step described later, the base material 11 preferably has heat shrinkability. In the case where the base material 11 is formed of a plastic film, the base material 11 is preferably a biaxially stretched film in terms of realizing isotropic heat shrinkability with respect to the dicing tape 10 and/or the base material 11. The heat shrinkage in the heat treatment test performed at a heating temperature of 100 ℃ and a heat treatment time of 60 seconds of the dicing tape 10 and/or the base material 11 is preferably 2 to 30%, more preferably 2 to 25%, still more preferably 3 to 20%, still more preferably 5 to 20%. The heat shrinkage ratio means at least one of the so-called MD heat shrinkage ratio and the so-called TD heat shrinkage ratio.

The surface of the substrate 11 on the side of the adhesive layer 12 may be subjected to a physical treatment, a chemical treatment, or a primer treatment for improving the adhesion to the adhesive layer 12. Examples of the physical treatment include: corona treatment, plasma treatment, sandblasting treatment, ozone exposure treatment, flame exposure treatment, high-voltage electric shock exposure treatment, and ionizing radiation treatment. Examples of the chemical treatment include chromic acid treatment. The treatment for improving the adhesion is preferably performed on the entire surface of the substrate 11 on the side of the pressure-sensitive adhesive layer 12.

The thickness of the base material 11 is preferably 40 μm or more, more preferably 50 μm or more, still more preferably 55 μm or more, still more preferably 60 μm or more, from the viewpoint of securing the strength of the base material 11 functioning as a support for the dicing tape 10 and/or dicing die bonding film X. Further, from the viewpoint of achieving moderate flexibility of the dicing tape 10 and/or the dicing die-bonding film X, the thickness of the base material 11 is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 μm or less.

The adhesive layer 12 of the dicing tape 10 contains an adhesive. The adhesive may be an adhesive (adhesive strength-lowering adhesive) which can intentionally lower the adhesive strength by an external action such as irradiation with radiation or heating, or an adhesive (adhesive strength-non-lowering adhesive) which has little or no adhesive strength by an external action, and may be appropriately selected according to a method, conditions, or the like for singulating the semiconductor chips by using the dicing die bonding film X.

When an adhesive agent of reduced adhesive strength is used as the adhesive agent in the adhesive layer 12, a state in which the adhesive layer 12 exhibits a relatively high adhesive strength and a state in which the adhesive strength is relatively low may be used separately during the manufacturing process and the use process of the dicing die bonding film X. For example, when the adhesive layer 20 is attached to the adhesive layer 12 of the dicing tape 10 during the production of the dicing die bonding film X, and when the dicing die bonding film X is used in a predetermined wafer dicing process, the adhesive layer 12 can be used to suppress and prevent the floating and peeling of the adherend such as the adhesive layer 20 from the adhesive layer 12, while in a subsequent pick-up process for picking up the semiconductor chip with the adhesive layer from the dicing tape 10 of the dicing die bonding film X, the adhesive force of the adhesive layer 12 can be reduced, and the semiconductor chip with the adhesive layer can be picked up from the adhesive layer 12 appropriately.

Examples of such an adhesive force-reducing adhesive include a radiation curable adhesive (an adhesive having radiation curability) and a heat-foamable adhesive. In the adhesive layer 12 of the present embodiment, one type of adhesive force-reducing adhesive may be used, or two or more types of adhesive force-reducing adhesives may be used. The adhesive layer 12 may be formed entirely of an adhesive force-reducing adhesive, or a part of the adhesive layer 12 may be formed of an adhesive force-reducing adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the pressure-sensitive adhesive layer 12 may be formed entirely of a pressure-sensitive adhesive having a reduced pressure-sensitive adhesive strength, or a predetermined portion of the pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive having a reduced pressure-sensitive adhesive strength, and the other portion may be formed of a pressure-sensitive adhesive having a non-reduced pressure-sensitive adhesive strength. When the adhesive layer 12 has a laminated structure, all layers forming the laminated structure may be formed of an adhesive force-reduced adhesive, or a part of layers in the laminated structure may be formed of an adhesive force-reduced adhesive.

As the radiation curable adhesive in the adhesive layer 12, for example, an adhesive of a type cured by irradiation of electron beam, ultraviolet ray, α ray, β ray, γ ray, or X ray can be used, and an adhesive of a type cured by ultraviolet ray irradiation (ultraviolet curable adhesive) can be particularly suitably used.

Examples of the radiation curable adhesive in the adhesive layer 12 include an additive type radiation curable adhesive containing: a base polymer such as an acrylic polymer as an acrylic adhesive; and a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond.

The acrylic polymer preferably contains a monomer unit derived from an acrylic acid ester and/or a methacrylic acid ester as a main monomer unit having the largest mass ratio. Hereinafter, "acrylic acid" and/or "methacrylic acid" are denoted by "(meth) acrylic acid".

Examples of the (meth) acrylate ester as the monomer unit for forming the acrylic polymer include: alkyl (meth) acrylates, cycloalkyl (meth) acrylates, aryl (meth) acrylates, and other hydrocarbon-containing (meth) acrylates. Examples of the alkyl (meth) acrylate include: methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl (i.e., lauryl), tridecyl, tetradecyl, hexadecyl, octadecyl, and eicosyl esters of (meth) acrylic acid. Examples of cycloalkyl (meth) acrylate include cyclopentyl and cyclohexyl (meth) acrylate. Examples of the aryl (meth) acrylate include phenyl (meth) acrylate and benzyl (meth) acrylate. The (meth) acrylate as a main monomer for the acrylic polymer may be one kind of (meth) acrylate or two or more kinds of (meth) acrylate. In order to suitably exhibit basic characteristics such as adhesion depending on the (meth) acrylate, the proportion of the (meth) acrylate as the main monomer in the entire monomer components for forming the acrylic polymer is preferably 40 mass% or more, more preferably 60 mass% or more.

The acrylic polymer may further contain monomer units derived from other monomers copolymerizable with the (meth) acrylic acid ester in order to modify its cohesion, heat resistance, etc. Examples of such monomer components include: carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, acrylonitrile and other functional group-containing monomers, and the like. Examples of the carboxyl group-containing monomer include: acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include: 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include: styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate, and (meth) acryloxynaphthalene sulfonic acid. Examples of the phosphate group-containing monomer include 2-hydroxyethyl acryloyl phosphate. As the other monomer for the acrylic polymer, one monomer may be used, or two or more monomers may be used. In order to properly exhibit basic characteristics such as adhesion depending on (meth) acrylate, the ratio of the other monomer component to the total monomer components used for forming the acrylic polymer is preferably 60 mass% or less, more preferably 40 mass% or less.

The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth) acrylate as a main monomer in order to form a crosslinked structure in its polymer skeleton. Examples of such polyfunctional monomers include: hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (i.e., polyglycidyl (meth) acrylate), polyester (meth) acrylate, and urethane (meth) acrylate. As the polyfunctional monomer used for the acrylic polymer, one polyfunctional monomer may be used, or two or more polyfunctional monomers may be used. The proportion of the polyfunctional monomer in the entire monomer components for forming the acrylic polymer is preferably 40 mass% or less, more preferably 30 mass% or less, in order to suitably exhibit basic characteristics such as adhesion depending on the (meth) acrylate ester in the adhesive layer 12.

The acrylic polymer may be obtained by polymerizing a raw material monomer for forming the same. Examples of the polymerization method include: solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of high cleanliness of the semiconductor device manufacturing method using dicing tape 10 and/or dicing die-bonding film X, it is preferable that the low molecular weight substance in adhesive layer 12 of dicing tape 10 and/or dicing die-bonding film X is small, and the number average molecular weight of the acrylic polymer is preferably 10 ten thousand or more, more preferably 20 ten thousand to 300 ten thousand.

The pressure-sensitive adhesive layer 12 and/or the pressure-sensitive adhesive for forming the same may contain an external crosslinking agent, for example, in order to increase the number average molecular weight of a base polymer such as an acrylic polymer. Examples of the external crosslinking agent that reacts with a base polymer such as an acrylic polymer to form a crosslinked structure include: polyisocyanate compounds, epoxy compounds, polyol compounds (polyhydric phenol compounds, etc.), aziridine compounds, and melamine-based crosslinking agents. The content of the external crosslinking agent in the adhesive layer 12 and/or the adhesive used to form it is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the base polymer.

Examples of the radiation-polymerizable monomer component for forming the radiation-curable adhesive include: urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1, 4-butanediol di (meth) acrylate. Examples of the radiation-polymerizable oligomer component used for forming the radiation-curable adhesive include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and those having a molecular weight of about 100 to 30000 are suitable. The total content of the radiation-polymerizable monomer component and the oligomer component in the radiation-curable adhesive is determined so that the adhesive force of the formed adhesive layer 12 can be appropriately reduced, and is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass, relative to 100 parts by mass of the base polymer such as the acrylic polymer. Further, as the additive type radiation curable adhesive, for example, those disclosed in Japanese patent application laid-open No. 60-196956 can be used.

Examples of the radiation curable adhesive in the adhesive layer 12 include: an internal radiation curable adhesive comprising a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond in a polymer side chain, a polymer main chain, or at a polymer main chain end. Such an internal type radiation curable adhesive is preferable in terms of suppressing an undesired change over time in the adhesive properties caused by movement of the low molecular weight component in the formed adhesive layer 12.

As the base polymer contained in the internal radiation curable adhesive, an acrylic polymer is preferably used as a basic skeleton. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer can be used. Examples of the method for introducing a radiation polymerizable carbon-carbon double bond into an acrylic polymer include the following methods: after copolymerizing a raw material monomer including a monomer having a predetermined functional group (functional group 1), a compound having a predetermined functional group (functional group 2) capable of reacting with and bonding to the functional group 1 and a radiation polymerizable carbon-carbon double bond is subjected to a condensation reaction or an addition reaction with the acrylic polymer while maintaining the radiation polymerization property of the carbon-carbon double bond.

Examples of the combination of the 1 st functional group and the 2 nd functional group include: carboxyl group and epoxy group, epoxy group and carboxyl group, carboxyl group and aziridinyl group, aziridinyl group and carboxyl group, hydroxyl group and isocyanate group, isocyanate group and hydroxyl group. Among these combinations, a combination of a hydroxyl group and an isocyanate group and a combination of an isocyanate group and a hydroxyl group are preferable from the viewpoint of easiness of reaction tracking. In addition, the technical difficulty of producing a polymer having an isocyanate group with high reactivity is high, and the case where the 1 st functional group on the acrylic polymer side is a hydroxyl group and the 2 nd functional group is an isocyanate group is more preferable from the viewpoint of easiness in producing or obtaining an acrylic polymer. In this case, examples of the isocyanate compound having both a radiation polymerizable carbon-carbon double bond and an isocyanate group as the 2 nd functional group include: methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, and m-isopropenyl- α, α -dimethylbenzyl isocyanate. The acrylic polymer having the 1 st functional group preferably contains a monomer unit derived from the above-mentioned hydroxyl group-containing monomer, and a monomer unit derived from an ether compound such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, and the like is also preferably used.

The radiation curable adhesive in the adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include: alpha-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, haloketone, acyl phosphine oxide, and acyl phosphonate. Examples of the α -ketol compound include: 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α -hydroxy- α, α' -dimethyl acetophenone, 2-methyl-2-hydroxy propiophenone, and 1-hydroxycyclohexyl phenyl ketone. Examples of the acetophenone compound include: methoxyacetophenone, 2-dimethoxy-1, 2-diphenylethan-1-one, 2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio) -phenyl ] -2-morpholinopropane-1. Examples of the benzoin ether compound include: benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal compound include benzildimethyl ketal. Examples of the aromatic sulfonyl chloride compound include 2-naphthalenesulfonyl chloride. Examples of the photoactive oxime-based compound include: 1-phenyl-1, 2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone compound include: benzophenone, benzoylbenzoic acid, and 3,3' -dimethyl-4-methoxybenzophenone. Examples of the thioxanthone compound include: thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2, 4-dimethylthioxanthone, isopropylthioxanthone, 2, 4-dichlorothioxanthone, 2, 4-diethylthioxanthone, and 2, 4-diisopropylthioxanthone. The content of the photopolymerization initiator in the radiation curable adhesive of the adhesive layer 12 is, for example, 0.05 to 20 parts by mass based on 100 parts by mass of the base polymer such as the acrylic polymer.

When the above-mentioned heat-expandable adhesive in the adhesive layer 12 is an adhesive containing a component (a foaming agent, heat-expandable microspheres, etc.) that expands and expands by heating, examples of the foaming agent include various inorganic foaming agents and organic foaming agents, and examples of the heat-expandable microspheres include microspheres in which a substance that expands easily by heating is enclosed in a shell. Examples of the inorganic foaming agent include: ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium borohydride, and azides. Examples of the organic foaming agent include: chlorofluoroalkanes such as trichlorofluoromethane and dichlorofluoromethane, azo compounds such as azobisisobutyronitrile, azodicarbonamide and barium azodicarbonate, hydrazine compounds such as p-toluenesulfonyl hydrazine, diphenylsulfone-3, 3' -disulfonyl hydrazide, 4' -oxybis (benzenesulfonyl hydrazide) and allylbis (sulfonyl hydrazide), semicarbazide compounds such as p-toluenesulfonyl semicarbazide and 4,4' -oxybis (benzenesulfonyl semicarbazide), triazole compounds such as 5-morpholino-1, 2,3, 4-thiatriazole, and N-nitroso pentamethylene tetramine and N, N ' -dimethyl-N, N ' -dinitroso terephthalamide. Examples of the material that can be easily gasified and expanded by heating to form the thermally expandable microspheres include isobutane, propane, and pentane. Thermally expandable microspheres can be produced by encapsulating a substance that is easily gasified and expanded by heating in a shell-forming substance by a coagulation method, an interfacial polymerization method, or the like. As the shell-forming substance, a substance exhibiting thermal melting property or a substance which can be broken by the effect of thermal expansion of the encapsulating substance can be used. Examples of such a substance include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.

Examples of the adhesive force non-decreasing type adhesive include: an adhesive in which the radiation curable adhesive described in the adhesive strength-reducing adhesive is cured by irradiation of radiation, a pressure-sensitive adhesive, and the like. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of pressure-sensitive adhesive may be used, or two or more types of pressure-sensitive adhesives may be used. The adhesive layer 12 may be formed entirely of an adhesive force non-reducing adhesive, or a part of the adhesive layer 12 may be formed of an adhesive force non-reducing adhesive. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the pressure-sensitive adhesive layer 12 may be formed entirely of a pressure-sensitive adhesive that is not reduced in pressure-sensitive adhesive strength, or a predetermined portion of the pressure-sensitive adhesive layer 12 may be formed of a pressure-sensitive adhesive that is not reduced in pressure-sensitive adhesive strength, and other portions may be formed of a pressure-sensitive adhesive that is reduced in pressure-sensitive adhesive strength. When the adhesive layer 12 has a laminated structure, all layers forming the laminated structure may be formed of an adhesive force non-reduced adhesive, or a part of layers in the laminated structure may be formed of an adhesive force non-reduced adhesive.

An adhesive in a form in which a radiation curable adhesive is cured by radiation irradiation (radiation-irradiated radiation curable adhesive) exhibits adhesion due to a polymer component contained therein even if the adhesive strength is lowered by radiation irradiation, and exhibits the minimum adhesive strength required for cutting the adhesive layer in a dicing step or the like. In the present embodiment, when the radiation-curable adhesive is used, the entire adhesive layer 12 may be formed of the radiation-curable adhesive irradiated with radiation in the direction of surface expansion of the adhesive layer 12, or a part of the adhesive layer 12 may be formed of the radiation-curable adhesive irradiated with radiation and the other part may be formed of the radiation-curable adhesive not irradiated with radiation.

The dicing die-bonding film X including the radiation-cured adhesive irradiated with radiation in at least a part of the adhesive layer 12 can be manufactured, for example, by the following process. First, an adhesive layer (radiation curable adhesive layer) obtained from a radiation curable adhesive is formed on the base material 11 of the dicing tape 10. Then, a part or the whole of the predetermined portion of the radiation curable adhesive layer is irradiated with radiation to form an adhesive layer at least a part of which contains the radiation curable adhesive. Next, an adhesive layer to be an adhesive layer 20 described later is formed on the adhesive layer. Thereafter, the adhesive layer 12 and the adhesive layer 20 are simultaneously formed by a one-time processing forming method, for example, to be described later, for these adhesive layers and adhesive layers. The dicing die bonding film X including the radiation-cured type adhesive irradiated with radiation in at least a part of the adhesive layer 12 may be produced by the following process. First, an adhesive layer (radiation curable adhesive layer) obtained from a radiation curable adhesive is formed on the base material 11 of the dicing tape 10. Then, an adhesive layer to be an adhesive layer 20 described later is formed on the radiation curable adhesive layer. Then, a part or the whole of the predetermined radiation curable adhesive layer is irradiated with radiation, and an adhesive layer at least a part of which contains the radiation curable adhesive is formed. Thereafter, the adhesive layer 12 and the adhesive layer 20 are simultaneously formed by a one-time process forming method, for example, to be described later, for these adhesive layers and adhesive layers.

On the other hand, as the pressure-sensitive adhesive in the adhesive layer 12, a known and conventional adhesive can be used, and an acrylic adhesive and a rubber-based adhesive using an acrylic polymer as a base polymer can be suitably used. When the pressure-sensitive adhesive is contained in the adhesive layer 12, the acrylic polymer as the base polymer of the acrylic adhesive preferably contains a monomer unit derived from (meth) acrylate as a main monomer unit having the largest mass ratio. Examples of such an acrylic polymer include acrylic polymers described in a radiation curable adhesive.

The pressure-sensitive adhesive layer 12 and/or the pressure-sensitive adhesive for forming the same may contain a crosslinking accelerator, a tackifier, an anti-aging agent, a pigment, a colorant such as a dye, and the like in addition to the above-described components. The colorant may be a compound that is colored by irradiation with radiation. Examples of such a compound include leuco dyes.

The thickness of the pressure-sensitive adhesive layer 12 is preferably 1 to 50. Mu.m, more preferably 2 to 30. Mu.m, still more preferably 5 to 25. Mu.m. Such a configuration is preferable in terms of obtaining a balance of the adhesive force of the adhesive layer 12 to the adhesive layer 20 before and after the radiation curing when the adhesive layer 12 contains a radiation curing type adhesive, for example.

The adhesive layer 20 of the dicing die bonding film X has both a function as an adhesive for die bonding exhibiting thermosetting property and a function of bonding a work such as a semiconductor wafer and a frame member such as a ring frame. In the present embodiment, the adhesive agent for forming the adhesive layer 20 may have a composition containing a thermosetting resin and a thermoplastic resin as an adhesive component, for example, or may have a composition containing a thermoplastic resin having a thermosetting functional group capable of reacting with a curing agent to bond. When the adhesive used for forming the adhesive layer 20 has a composition containing a thermoplastic resin having a thermosetting functional group, the adhesive does not necessarily contain a thermosetting resin (epoxy resin or the like). Such an adhesive layer 20 may have a single-layer structure or a multilayer structure.

The adhesive layer 20 having both the function as an adhesive for die bonding and the adhesive function has a tensile storage modulus (1 st tensile storage modulus) of 1000 to 4000MPa, preferably 1200 to 3900MPa, and more preferably 1500 to 3800MPa at-15℃measured under conditions (tensile storage modulus measurement conditions) of 10mm apart from an initial jig, a frequency of 10Hz, a dynamic strain.+ -. 0.5 μm, and a temperature rise rate of 5 ℃ per minute for an adhesive layer test piece having a width of 4 mm. The adhesive layer 20 has a tensile storage modulus (2 nd tensile storage modulus) of 10 to 240MPa, preferably 20 to 200MPa, and more preferably 40 to 150MPa at 23℃measured under the tensile storage modulus measurement conditions for an adhesive layer sample sheet having a width of 4 mm. The tensile storage modulus can be obtained based on dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring device (trade name "Rheogel-E4000", manufactured by UBM Co.). In this measurement, the dimensions of a sample wafer as a measurement object were set to 4mm in width by 20mm in length, the distance between the initial jigs of the sample wafer holding jigs was set to 10mm, the measurement mode was set to a stretching mode, the measurement temperature range was-30 to 100 ℃, the frequency was set to 10Hz, the dynamic strain was set to ±0.5%, and the temperature rise rate was set to 5 ℃/min.

The adhesive layer 20 having both the function as an adhesive for die bonding and the adhesive function exhibits a 180 DEG peel adhesion to SUS flat surfaces of preferably 1N/10mm or more, more preferably 1.5N/10mm or more, still more preferably 2N/10mm or more in a peel test under conditions (condition 1) of-15 ℃, a peel angle of 180 DEG and a tensile speed of 300 mm/min. In the peel test under the aforementioned condition 1, the adhesive layer 20 exhibits 180 ° peel adhesion to the SUS plane of, for example, 100N/10mm or less, preferably 50N/10mm or less. The adhesive layer 20 exhibits a 180 ° peel adhesion to the SUS plane of preferably 0.1N/10mm or more, more preferably 0.3N/10mm or more, and still more preferably 0.5N/10mm or more in a peel test under conditions (condition 2) of 23 ℃ and a peel angle of 180 ° and a tensile speed of 300 mm/min. In the peel test under the aforementioned condition 2, the adhesive layer 20 exhibits 180 ° peel adhesion to the SUS plane of, for example, 20N/10mm or less, preferably 10N/10mm or less. The 180℃peel adhesion can be measured using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu corporation). The sample sheet used for the measurement was lined with a lining tape (trade name "BT-315", manufactured by Nito electric Co., ltd.) and had dimensions of 20mm in width by 100mm in length. The adhesion of the sample piece to the SUS plate as the adherend was performed by a press-bonding operation of reciprocating a 2kg roller 1 time. In the present measurement, the measurement temperature and/or the peeling temperature were/was-15 ℃ (condition 1) or 23 ℃ (condition 2), the peeling angle was 180 °, and the stretching speed was 300 mm/min.

When the adhesive layer 20 contains a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a urethane resin, a silicone resin, and a thermosetting polyimide resin. In forming the adhesive layer 20, one type of thermosetting resin may be used, or two or more types of thermosetting resins may be used. For reasons that the content of ionic impurities and the like that may cause corrosion of the semiconductor chip to be die-bonded is low, epoxy resin is preferable as the thermosetting resin contained in the adhesive layer 20. Further, as the curing agent for the epoxy resin, a phenol resin is preferable.

Examples of the epoxy resin include: bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, triphenylolmethane type, tetraphenylolethane type, hydantoin type, triglycidyl isocyanurate type, and glycidylamine type epoxy resins. The novolac type epoxy resin, the biphenyl type epoxy resin, the trihydroxyphenyl methane type epoxy resin, and the tetrahydroxyphenyl ethane type epoxy resin are rich in reactivity with the phenolic resin as a curing agent and are excellent in heat resistance, and thus are preferable as the epoxy resin contained in the adhesive layer 20.

Examples of phenolic resins that can function as curing agents for epoxy resins include: novolac type phenolic resin, resol type phenolic resin, and polyoxystyrenes such as poly-p-hydroxystyrene. Examples of the novolak type phenol resin include: phenol novolac resins, phenol aralkyl resins, cresol novolac resins, t-butylphenol novolac resins, and nonylphenol novolac resins. As the phenolic resin which can function as a curing agent for the epoxy resin, one type of phenolic resin may be used, or two or more types of phenolic resins may be used. The phenol novolac resin and the phenol aralkyl resin tend to improve the connection reliability of the adhesive when used as a curing agent for an epoxy resin used as an adhesive for die bonding, and therefore are preferable as a curing agent for an epoxy resin contained in the adhesive layer 20.

The adhesive layer 20 contains the phenolic resin in an amount of preferably 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents, relative to 1 equivalent of the epoxy group in the epoxy resin component, of hydroxyl groups in the phenolic resin, from the viewpoint of sufficiently proceeding the curing reaction of the epoxy resin and the phenolic resin.

Examples of the thermoplastic resin contained in the adhesive layer 20 include: natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon, 6-nylon, saturated polyester resin such as phenoxy resin, acrylic resin, PET, PBT, polyamide-imide resin, and fluororesin. In forming the adhesive layer 20, one type of thermoplastic resin may be used, or two or more types of thermoplastic resins may be used. The thermoplastic resin contained in the adhesive layer 20 is preferably an acrylic resin for the reason that the thermoplastic resin has less ionic impurities and high heat resistance, and the bonding reliability by the adhesive layer 20 is easily ensured. In addition, from the viewpoint of both the adhesion of the adhesive layer 20 to the ring frame to be described later at room temperature and the temperature in the vicinity thereof and the prevention of the residue at peeling, the adhesive layer 20 preferably contains a polymer having a glass transition temperature of-10 to 10 ℃ as a main component of the thermoplastic resin. The main component of the thermoplastic resin is a resin component that occupies the largest mass proportion among the thermoplastic resin components.

For the glass transition temperature of the polymer, a glass transition temperature (theoretical value) obtained based on the following Fox formula can be used. The Fox formula is a relationship between the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of the homopolymer of each constituent monomer in the polymer. In the following Fox formula, tg represents the glass transition temperature (. Degree. C.) of the polymer, wi represents the weight percentage of the monomer i constituting the polymer, tgi represents the glass transition temperature (. Degree. C.) of the homopolymer of the monomer i. The glass transition temperatures of the homopolymers are, for example, those listed in "synthetic resin for New Polymer library 7 paint was entered into the literature" (Santa Clara, north Kokai, polymer journal, 1995), "acrylic acid ester commercial catalogue (1997 edition)" (Mitsubishi Yang Zhushi, inc.). On the other hand, the glass transition temperature of the homopolymer of the monomer can be obtained by a method specifically described in JP-A2007-51271.

Fox 1/(273+tg) =Σ [ Wi/(273+tgi) ]

The acrylic resin contained as the thermoplastic resin in the adhesive layer 20 preferably contains a monomer unit derived from (meth) acrylic acid ester as a main monomer unit having the largest mass ratio. As such a (meth) acrylate, for example, the same (meth) acrylate as that described in the acrylic polymer as one component of the radiation curable adhesive for forming the adhesive layer 12 can be used. The acrylic resin contained as the thermoplastic resin in the adhesive layer 20 may contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid ester. Examples of such other monomer components include: the carboxyl group-containing monomer, acid anhydride monomer, hydroxyl group-containing monomer, glycidyl group-containing monomer, sulfonic acid group-containing monomer, phosphoric acid group-containing monomer, functional group-containing monomer such as acrylamide and acrylonitrile, and various polyfunctional monomers, specifically, monomers similar to those described as other monomers copolymerizable with (meth) acrylic acid esters in the acrylic polymer as one component of the radiation curable adhesive for forming the adhesive layer 12 can be used. From the viewpoint of achieving high cohesive force of the adhesive layer 20, the acrylic resin contained in the adhesive layer 20 is preferably a copolymer of a (meth) acrylic acid ester (in particular, an alkyl (meth) acrylate having an alkyl group with a carbon number of 4 or less), a carboxyl group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (in particular, a polyglycidyl-based polyfunctional monomer), more preferably a copolymer of ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile, and polyglycidyl (meth) acrylate.

The content ratio of the thermosetting resin in the adhesive layer 20 is preferably 5 to 60% by mass, more preferably 10 to 50% by mass, from the viewpoint of appropriately exhibiting the function as the thermosetting adhesive in the adhesive layer 20.

When the adhesive layer 20 includes a thermoplastic resin having a thermosetting functional group, for example, an acrylic resin having a thermosetting functional group can be used as the thermoplastic resin. The acrylic resin used to form the thermosetting functional group-containing acrylic resin preferably contains a monomer unit derived from a (meth) acrylate as a main monomer unit in a mass ratio of the most. As such a (meth) acrylate, for example, the same (meth) acrylate as that described in the acrylic polymer as one component of the radiation curable adhesive for forming the adhesive layer 12 can be used. On the other hand, examples of the thermosetting functional group used for forming the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group. Among them, glycidyl groups and carboxyl groups can be suitably used. That is, as the acrylic resin having a thermosetting functional group, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be suitably used. As the curing agent for the thermosetting functional group-containing acrylic resin, for example, a substance described as an external crosslinking agent which is sometimes regarded as one component of the radiation curable adhesive for forming the adhesive layer 12 can be used. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyhydric phenol compound can be suitably used as a curing agent, and for example, the above-mentioned various phenolic resins can be used.

In order to achieve a certain degree of crosslinking in the adhesive layer 20 before curing for die bonding, for example, a polyfunctional compound capable of reacting with and bonding to functional groups or the like at the molecular chain ends of the resin contained in the adhesive layer 20 is preferably blended in advance as a crosslinking agent in the resin composition for forming an adhesive layer. Such a configuration is preferable in terms of improving the adhesive property of the adhesive layer 20 at high temperature and in terms of improving heat resistance. Examples of such a crosslinking agent include polyisocyanate compounds. Examples of the polyisocyanate compound include: toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5-naphthalene diisocyanate, and addition products of polyols and diisocyanates. The content of the crosslinking agent in the resin composition for forming an adhesive layer is preferably 0.05 parts by mass or more with respect to 100 parts by mass of the resin having the functional group capable of reacting with and bonding to the crosslinking agent, from the viewpoint of improving the cohesive force of the formed adhesive layer 20, and preferably 7 parts by mass or less from the viewpoint of improving the adhesive force of the formed adhesive layer 20. As the crosslinking agent in the adhesive layer 20, other polyfunctional compounds such as epoxy resin and polyisocyanate compound may be used in combination.

The content ratio of the high molecular weight component in the adhesive layer 20 is preferably 50 to 100% by mass, more preferably 50 to 80% by mass. The high molecular weight component means a component having a weight average molecular weight of 10000 or more. Such a configuration is preferable in terms of both adhesion of the adhesive layer 20 to a ring frame to be described later at room temperature and a temperature in the vicinity thereof and prevention of residue at peeling. In addition, the adhesive layer 20 may include a liquid resin that is liquid at 23 ℃. When the adhesive layer 20 contains such a liquid resin, the content of the liquid resin in the adhesive layer 20 is preferably 1 to 10% by mass, more preferably 1 to 5% by mass. Such a configuration is preferable in terms of achieving both adhesion of the adhesive layer 20 to a ring frame to be described later at room temperature and a temperature in the vicinity thereof and preventing residues at the time of peeling.

The adhesive layer 20 may contain a filler. By blending the filler into the adhesive layer 20, physical properties such as elastic modulus such as tensile storage modulus, electrical conductivity, and thermal conductivity of the adhesive layer 20 can be adjusted. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are particularly preferred. Examples of the inorganic filler include: aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, amorphous silica, elemental metals such as aluminum, gold, silver, copper, nickel, alloys, amorphous carbon black, graphite. The filler may have various shapes such as spherical, needle-like, flake-like, and the like. As the filler in the adhesive layer 20, one type of filler may be used, or two or more types of filler may be used. In order to ensure the adhesion of the adhesive layer 20 to the annular frame in the low-temperature expansion step described later, the filler content in the adhesive layer 20 is preferably 30 mass% or less, more preferably 25 mass% or less.

When the adhesive layer 20 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. The filler having an average particle diameter of 0.005 μm or more is preferable in that the adhesive layer 20 can achieve high wettability and adhesion to an adherend such as a semiconductor wafer. The composition having an average particle diameter of 10 μm or less is preferable in terms of obtaining a sufficient filler addition effect in the adhesive layer 20 and ensuring heat resistance. The average particle diameter of the filler was determined using, for example, a photometric particle size distribution meter (trade name "LA-910", manufactured by horiba, inc.).

The adhesive layer 20 may contain other components as needed. Examples of the other components include: flame retardants, silane coupling agents, and ion capturing agents. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resins. Examples of the silane coupling agent include: beta- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, gamma-epoxypropoxypropyltrimethoxysilane, and gamma-epoxypropoxypropylmethyldiethoxysilane. Examples of the ion capturing agent include: hydrotalcite, bismuth hydroxide, hydrated antimony oxide (e.g., IXE-300 manufactured by Toyama Synthesis Co., ltd.), zirconium phosphate of a specific structure (e.g., IXE-100 manufactured by Toyama Synthesis Co., ltd.), and magnesium silicate (e.g., "Kyoward 600" manufactured by co-chemical industries, co.), and aluminum silicate (e.g., "Kyoward 700" manufactured by co-chemical industries, co.). Compounds that form complexes with metal ions can also be used as ion capturing agents. Examples of such a compound include: triazole-based compounds, tetrazole-based compounds, and bipyridine-based compounds. Among them, triazole-based compounds are preferable from the viewpoint of stability of a complex formed with a metal ion. Examples of such triazole compounds include: 1,2, 3-benzotriazole, 1- { N, N-bis (2-ethylhexyl) aminomethyl } benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-3, 5-di-tert-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-tert-butyl-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3, 5-di-tert-pentylphenyl) benzotriazole, 2- (2-hydroxy-5-tert-octylphenyl) benzotriazole, 6- (2-benzotriazolyl) -4-tert-octyl-6 '-methyl-2, 2' -methylenebisphenol, 1- (2, 3-dihydroxypropyl) benzotriazole, 1- (1, 2-dicarboxydiphenyl) benzotriazole, 1- (2-ethylhexyl aminomethyl) benzotriazole, 2, 4-di-tert-amyl-6- { (H-benzol-1-yl) methyl } phenol, 2- (2-hydroxy-3, 5-tert-butylphenyl) -4-tert-butyl-6 '-methyl-2, 2' -methylenebisphenol, 1- (2, 3-dicarboxydryl) benzotriazole, 2- (2-ethylhexyl) benzotriazole, 2-di-tert-amyl-6-hydroxy-6-tert-butyl-phenyl) benzotriazole, 2-3-hydroxy-3-chloro-2-hydroxy-2-phenyl-2-hydroxy-2-chlorophenyl ] propionate, 2-ethylhexyl-3- [ 3-tert-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl ] propionate, 2- (2H-benzotriazol-2-yl) -6- (1-methyl-1-phenylethyl) -4- (1, 3-tetramethylbutyl) phenol, 2- (2H-benzotriazol-2-yl) -4-tert-butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-tert-octylphenyl) -benzotriazole, 2- (3-tert-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3, 5-di-tert-pentylphenyl) benzotriazole, 2- (2-hydroxy-3, 5-di-tert-butylphenyl) -5-chloro-benzotriazole, 2- [ 2-hydroxy-3, 5-di (1, 1-dimethylbenzyl) phenyl ] -2H-benzotriazole, 2' -methylenebis- [6- (2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3, 5-di-tert-butylphenyl) -2H-benzotriazole, 2- [2- (3-hydroxy-3, 5-di-butylphenyl) -alpha-2-hydroxy-4-methyl-4-hydroxy-4-butylphenyl ] -2-hydroxy-2-phenyl-, α -dimethylbenzyl) phenyl ] -2H-benzotriazole, methyl-3- [3- (2H-benzotriazol-2-yl) -5-tert-butyl-4-hydroxyphenyl ] propionate. In addition, a prescribed hydroxyl group-containing compound such as hydroquinone compound, hydroxyanthraquinone compound, polyphenol compound, etc. can also be used as the ion scavenger. Specific examples of such hydroxyl group-containing compounds include: 1, 2-benzenediol, alizarin, 1, 5-dihydroxyanthraquinone, tannic acid, gallic acid, methyl gallate, pyrogallol, and the like. As the other components described above, one component may be used, or two or more components may be used.

The thickness of the adhesive layer 20 is, for example, in the range of 1 to 200 μm. The upper limit of the thickness is preferably 100. Mu.m, more preferably 80. Mu.m. The lower limit of the thickness is preferably 3 μm, more preferably 5 μm.

In the present embodiment, the dicing die bonding film X has a laminated structure including the base material 11, the adhesive layer 12, and the adhesive layer 20, and the inner region R2 and the outer region R1 are continuous. The thickness of the dicing die-bonding film X is preferably the same in the outer region R1 and the inner region R2. In the present embodiment, in the in-plane direction D of the dicing die-bonding film X, the outer peripheral end 20e of the adhesive layer 20 is located at a distance of 1000 μm or less, preferably 500 μm or less, from the outer peripheral end 11e of the base material 11 and the outer peripheral end 12e of the adhesive layer 12 in the dicing tape 10. That is, the entire circumference of the outer peripheral end 20e of the adhesive layer 20 is located between the inner 1000 μm and the outer 1000 μm, preferably between the inner 500 μm and the outer 500 μm of the outer peripheral end 11e of the base material 11, and between the inner 1000 μm and the outer 1000 μm, preferably between the inner 500 μm and the outer 500 μm of the outer peripheral end 12e of the adhesive layer 12 in the film in-plane direction D. In this configuration in which the dicing tape 10 and/or the adhesive layer 12 thereof and the adhesive layer 20 thereon have substantially the same dimensions in the in-plane direction D, the adhesive layer 20 includes a region for bonding a work and a region for bonding a frame.

The dicing die bonding film X may be provided with a spacer S as shown in fig. 2. Specifically, each dicing die-bonding film X may be in the form of a sheet with a separator S, or the separator S may be in the form of a strip on which a plurality of dicing die-bonding films X are arranged and wound into a roll. The separator S is an element for protecting the surface of the adhesive layer 20 of the dicing die bonding film X by coating, and is peeled off when the dicing die bonding film X is used. Examples of the separator S include: polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, plastic film surface-coated with a release agent such as a fluorine-based release agent, long-chain alkyl acrylate-based release agent, paper, etc. The thickness of the separator S is, for example, 5 to 200. Mu.m.

The dicing die bonding film X having the above-described structure can be manufactured, for example, as follows.

As shown in fig. 3 (a), the sheet of the dicing tape 10 to be processed into the dicing die-bonding film X can be produced by providing the adhesive layer 12 'to be processed into the adhesive layer 12 on the base material 11' to be processed into the base material 11. The resin substrate 11' can be produced by a film-forming method such as a roll-forming method, a casting method in an organic solvent, a blow-up extrusion method in a closed system, a T-die extrusion method, a coextrusion method, or a dry lamination method. The film and/or the base material 11' after the film formation is subjected to a predetermined surface treatment as needed. In the formation of the adhesive layer 12', for example, after preparing an adhesive solution for forming an adhesive layer, the adhesive solution is first coated on the substrate 11' or a predetermined separator to form an adhesive coating film. Examples of the method for applying the binder solution include: roll coating, screen coating, and gravure coating. Then, the adhesive coating film is crosslinked by heating as needed, and desolvation is performed as needed. The heating temperature is, for example, 80 to 150℃and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 12' is formed on the separator, the pressure-sensitive adhesive layer 12' with the separator is bonded to the base material 11', and then the separator is peeled off. As described above, the adhesive tape 10' to be processed into the dicing tape 10 as a sheet can be manufactured.

On the other hand, as shown in fig. 3 (b), an adhesive film 20' to be processed into an adhesive layer 20 is produced. In the production of the adhesive film 20', after the adhesive composition for forming the adhesive layer is prepared, the adhesive composition is first coated on the separator S to form the adhesive composition layer. Examples of the method for applying the adhesive composition layer include roll coating, screen coating, and gravure coating. Next, the adhesive composition layer is heated to cause a crosslinking reaction as needed, and desolvation as needed. The heating temperature is, for example, 70 to 160℃and the heating time is, for example, 1 to 5 minutes. In this way, the adhesive film 20' with the separator S can be produced.

In the production of the dicing die-bonding film X, next, as shown in fig. 3 (c), the adhesive layer 12' side of the tape 10' is bonded by pressure to the adhesive film 20'. Thus, a laminated sheet having a laminated structure including the separator S, the adhesive film 20', the adhesive layer 12', and the base material 11' is produced. In this step, the bonding temperature is, for example, 30 to 50℃and preferably 35 to 45 ℃. The bonding pressure (line pressure) is, for example, 0.1 to 20kgf/cm, preferably 1 to 10kgf/cm. When the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer as described above, when radiation such as ultraviolet rays is irradiated to the pressure-sensitive adhesive layer 12' after the adhesion of the pressure-sensitive adhesive film 20', the pressure-sensitive adhesive layer 12' is irradiated with radiation from, for example, the substrate 11' side of the tape 10', and the irradiation amount thereof is, for example, 50 to 500mJ/cm ² Preferably 100 to 300mJ/cm ² . The irradiation region is, for example, the whole of the adhesive layer 12 to be adhered to the adhesive layer 20. In the present invention, when the adhesive layer 12 'and/or the adhesive layer 12 is designed as a radiation curable adhesive layer such as ultraviolet curing, the adhesive film 20' and/or the adhesive layer 20 have a structure that is not cured by irradiation of radiation such as ultraviolet.

Next, as shown in fig. 3 (d), the laminated sheet is subjected to processing from the side of the base material 11' to the side of the separator S (the cutting position is schematically indicated by a bold line in fig. 3 (d)). For example, the laminated sheet is moved at a fixed speed along one direction F, and the surface with the processing blade of a rotary roller (not shown) having the processing blade for punching on the surface thereof is brought into contact with the base material 11' of the laminated sheet with a predetermined pressing force, the surface being rotatably disposed around an axis orthogonal to the direction F. Thus, dicing tape 10 (base material 11, adhesive layer 12) and adhesive layer 20 are formed by one-time processing, and dicing die bonding film X is formed on separator S. Then, as shown in fig. 3 (e), the material laminated portion around the dicing die bonding film X is removed from the separator S.

As described above, the dicing die bonding film X can be manufactured.

In the manufacturing process of the semiconductor device, as described above, in order to obtain the semiconductor chip with the adhesive layer, an expanding process using the dicing die bonding film, that is, an expanding process for dicing, may be performed, and in the expanding process, it is necessary to appropriately apply a dicing force to the die bonding film on the dicing tape, the semiconductor wafer, and other workpieces. In the dicing die-bonding film X, the ratio of the 1 st tensile stress at-15 ℃ to the 1 st tensile stress of the 1 st test piece derived from the outer region R1 of the film up to 20mm inward from the outer peripheral edge of the film to the 2 nd tensile stress of the 2 nd test piece derived from the inner region R2 of the same film at-15 ℃ is 0.9 to 1.1, preferably 0.95 to 1.05. Such a configuration is suitable for making the degree of elongation uniform in the dicing die bonding film X including the outer region R1 and the inner region R2 in the low-temperature expansion step for dicing performed at-15 ℃ which is a temperature lower than room temperature and a temperature in the vicinity thereof. Therefore, the dicing die-bonding film X having such a configuration is suitable for making uniform the cutting force of the adhesive layer 20 and the work piece acting on the dicing tape 10 in the low-temperature expansion step, and is suitable for cutting them well.

The dicing die-bonding film X having the uniform elongation degree obtained by the expansion in this way can be designed such that the dicing tape 10 and/or the adhesive layer 12 thereof and the adhesive layer 20 thereon have substantially the same dimensions in the film in-plane direction so that the adhesive layer 20 includes the work bonding region and the frame bonding region. As shown in the present embodiment, the outer peripheral ends of the adhesive layer 20 may be located at a distance of 1000 μm or less from the respective outer peripheral ends of the adhesive layer 12 of the dicing tape 10 in the in-plane direction of the dicing die bonding film X. Such dicing die bonding film X is suitable for performing processing for forming one dicing tape 10 having a laminated structure of the base material 11 and the adhesive layer 12 and processing for forming one adhesive layer 20 at a time by processing such as one-shot punching processing. Such a dicing die bonding film X is suitable for cutting the adhesive layer 20 well in the expansion step as described above, and is suitable for efficient production from the viewpoint of reducing the number of production steps, suppressing the production cost, and the like.

The dicing die-bonding film X has a laminated structure including the base material 11, the adhesive layer 12, and the adhesive layer 20, and the inner region R2 and the outer region R1 are continuous as described above. The thickness of the dicing die-bonding film X is preferably the same in the inner region R2 and the outer region R1 as described above. These configurations are preferable in achieving the above-described excellent severance in the expanding step.

The 1 st tensile stress and the 2 nd tensile stress of the dicing die-bonding film X at-15 ℃ are preferably 5N or more, more preferably 8N or more, and still more preferably 10N or more as described above. Such a configuration is preferable in terms of ensuring the breaking force acting on the adhesive layer 20 when the dicing die bonding film X is expanded at a temperature of-15 ℃ and the vicinity thereof. The 1 st tensile stress and the 2 nd tensile stress of the dicing die-bonding film X at-15 ℃ are preferably 28N or less, more preferably 25N or less, and still more preferably 20N or less as described above. Such a configuration is preferable in terms of suppressing peeling between the adhesive layer 12 and the adhesive layer 20 of the dicing tape 10 when the dicing die bonding film X is expanded at a temperature of-15 ℃ and the vicinity thereof.

The adhesive layer 20 of the dicing die-bonding film X exhibits a 180 ° peel adhesion to the SUS plane of preferably 1N/10mm or more, more preferably 1.5N/10mm or more, still more preferably 2N/10mm or more in a peel test under conditions of-15 ℃ and a peel angle of 180 ° and a stretching speed of 300 mm/min as described above. Further, the adhesive layer 20 exhibits 180 ° peel adhesion to the SUS plane of, for example, 100N/10mm or less, preferably 50N/10mm or less in peel test under the same conditions. This configuration concerning the adhesive force is suitable in ensuring the holding of the frame member based on the dicing die-bonding film X at-15 ℃ which is a temperature lower than the room temperature and a temperature in the vicinity thereof.

The 3 rd tensile stress generated at a strain value of 30% in the tensile test performed on the 1 st test piece under the conditions of 20mm,23 ℃ and a tensile speed of 300 mm/min between the initial jigs, and the 4 th tensile stress generated at a strain value of 30% in the tensile test performed on the 2 nd test piece under the same conditions (conditions of 20mm,23 ℃ and a tensile speed of 300 mm/min between the initial jigs) are preferably 1N or more, more preferably 3N or more, and further preferably 5N or more as described above. Such a configuration is suitable for realizing uniformity of the degree of elongation of the dicing die-bonding film X including the outer region R1 and the inner region R2 when it is expanded at a temperature of 23 ℃ and the vicinity thereof. The 3 rd tensile stress and the 4 th tensile stress are preferably 20N or less, more preferably 15N or less, and further preferably 10N or less as described above. Such a configuration is preferable in terms of suppressing peeling between the adhesive layer 12 and the adhesive layer 20 of the dicing tape 10 when the dicing die bonding film X is expanded at a temperature of 23 ℃ and the vicinity thereof.

The ratio of the 4 th tensile stress of the dicing die-bonding film X to the 3 rd tensile stress is preferably 0.95 to 1.05 as described above. Such a configuration is suitable for realizing uniformity of the degree of elongation of the dicing die-bonding film X including the outer region R1 and the inner region R2 when it is expanded at a temperature of 23 ℃ and the vicinity thereof.

The adhesive layer 20 of the dicing die-bonding film X exhibits a 180 ° peel adhesion to the SUS plane preferably of 0.1N/10mm or more, more preferably of 0.3N/10mm or more, still more preferably of 0.5N/10mm or more in a peel test under conditions of a peel angle of 180 ° and a tensile speed of 300 mm/min at 23 ℃. Such a configuration is preferable in ensuring the holding of the frame member by the dicing die-bonding film X at a temperature of 23 ℃ and the vicinity thereof. Further, the adhesive layer 20 exhibits 180 ° peel adhesion to the SUS plane of, for example, 20N/10mm or less, preferably 10N/10mm or less in peel test under the same conditions as described above. Such a configuration is suitable for suppressing generation of adhesive residues in a frame member such as a ring frame when the frame member is peeled from the adhesive layer 20 of the dicing die bonding film X.

Fig. 4 to 9 illustrate a method for manufacturing a semiconductor device according to an embodiment of the present invention.

In the present method for manufacturing a semiconductor device, first, as shown in fig. 4 (a) and 4 (b), dividing grooves 30a are formed in a semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor devices (not shown) have been mounted on the 1 st surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor devices have been formed on the 1 st surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is attached to the 2 nd surface Wb side of the semiconductor wafer W, a dividing groove 30a of a predetermined depth is formed on the 1 st surface Wa side of the semiconductor wafer W by using a rotary blade such as a dicing device in a state where the semiconductor wafer W is held on the wafer processing tape T1. The dividing grooves 30a are voids (the dividing grooves 30a are schematically shown by thick lines in fig. 4 to 6) for separating the semiconductor wafer W into semiconductor chip units.

Next, as shown in fig. 4 (c), the wafer processing tape T2 having the adhesive surface T2a is bonded to the 1 st surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is peeled from the semiconductor wafer W.

Next, as shown in fig. 4 d, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state where the semiconductor wafer W is held on the wafer processing tape T2 (wafer thinning step). The grinding may be performed using a grinding device having a grinding stone. Through this wafer thinning process, the semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips 31 is formed in the present embodiment. Specifically, the semiconductor wafer 30A has a portion (connection portion) to be connected to a portion on the 2 nd side Wb side to be singulated into a plurality of semiconductor chips 31. The thickness of the connection portion of the semiconductor wafer 30A, that is, the distance between the 2 nd surface Wb of the semiconductor wafer 30A and the front end on the 2 nd surface Wb side of the dividing groove 30A is, for example, 1 to 30 μm, preferably 3 to 20 μm.

Then, as shown in fig. 5 (a), the semiconductor wafer 30A held by the wafer processing tape T2 is bonded to the adhesive layer 20 of the dicing die bonding film X. Thereafter, as shown in fig. 5 (b), the wafer processing tape T2 is peeled from the semiconductor wafer 30A. When the adhesive layer 12 in the dicing die-bonding film X is a radiation-curable adhesive layer, instead of the radiation irradiation described above in the process of manufacturing the dicing die-bonding film X, the adhesive layer 12 may be irradiated with radiation such as ultraviolet rays from the side of the base material 11 after the bonding of the semiconductor wafer 30A to the adhesive layer 20. The irradiation amount is, for example, 50 to 500mJ/cm ² Preferably 100 to 300mJ/cm ² . The area (irradiation area L shown in fig. 1) of the dicing die bonding film X to be irradiated as an adhesive force reducing means of the adhesive layer 12 is, for example, an area other than the peripheral edge portion of the adhesive layer 20 bonding area in the adhesive layer 12.

Next, after the annular frame 41 is attached to the adhesive layer 20 in the dicing die bonding film X, the dicing die bonding film X with the semiconductor wafer 30A is fixed to the holding tool 42 of the expanding device as shown in fig. 6 (a).

Then, as shown in fig. 6 b, the 1 st expansion step (cooling expansion step) is performed under relatively low temperature conditions, the semiconductor wafer 30A is singulated into a plurality of semiconductor chips 31, and the adhesive layer 20 of the dicing die bonding film X is cut into small pieces of the adhesive layer 21, to obtain the semiconductor chips 31 with the adhesive layer. In this step, the hollow cylindrical jack member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side in the drawing of the dicing die bonding film X and is lifted up, and the dicing tape 10 to which the dicing die bonding film X of the semiconductor wafer 30A is bonded is expanded in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. The expansion is performed under conditions such that a tensile stress in the range of 15 to 32MPa, preferably 20 to 32MPa, is generated in the dicing tape 10. The temperature conditions in the cooling expansion step are, for example, 0℃or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and even more preferably-15 ℃. The expansion speed (the speed at which the jack-up member 43 is raised) in the cooling expansion step is preferably 0.1 to 100 mm/sec. The expansion amount in the cooling expansion step is preferably 3 to 16mm.

In this step, the semiconductor wafer 30A is cut at a thin and easily broken portion, and the semiconductor chips 31 are singulated. At the same time, in this step, the adhesive layer 20 adhered to the adhesive layer 12 of the dicing tape 10 to be expanded is prevented from deforming in each region where the semiconductor chips 31 are adhered, and on the other hand, such deformation preventing action is not generated at the position facing the dividing grooves between the semiconductor chips 31, and in this state, the tensile stress generated on the dicing tape 10 acts. As a result, the adhesive layer 20 is cut at a position facing the dividing groove between the semiconductor chips 31. After this step, as shown in fig. 6 (c), the jack member 43 is lowered to release the expanded state of the dicing tape 10.

Next, as shown in fig. 7 (a), the 2 nd expansion step is performed under relatively high temperature conditions, so that the distance (pitch distance) between the semiconductor chips 31 with the adhesive layer is widened. In this step, the hollow cylindrical jack member 43 provided in the expanding device is again lifted up to expand the dicing tape 10 for dicing the die-bonding film X. The temperature condition in the 2 nd expansion step is, for example, 10℃or higher, preferably 15 to 30 ℃. The expansion speed (the speed at which the jack-up member 43 is raised) in the 2 nd expansion step is, for example, 0.1 to 10 mm/sec, preferably 0.3 to 1 mm/sec. The expansion amount in the 2 nd expansion step is, for example, 3 to 16mm. In this step, the pitch of the adhesive layer-attached semiconductor chips 31 is widened to such an extent that the adhesive layer-attached semiconductor chips 31 can be picked up from the dicing tape 10 by a pickup step described later. After this step, the jack member 43 is lowered as shown in fig. 7 (b), and the expanded state of the dicing tape 10 is released. In order to suppress the narrowing of the distance between the semiconductor chips 31 with the adhesive layer on the dicing tape 10 after the unexpanded state, it is preferable to heat and shrink the outer portion of the holding area of the semiconductor chips 31 in the dicing tape 10 before the unexpanded state.

Next, after a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 10 having the semiconductor chips 31 with the adhesive layer by using a cleaning liquid such as water as needed, the semiconductor chips 31 with the adhesive layer are picked up from the dicing tape 10 (pick-up step), as shown in fig. 8. For example, the semiconductor chip 31 with the adhesive layer as the pickup object is lifted up by the needle member 44 of the pickup mechanism at the lower side in the drawing of the dicing tape 10 to be lifted up via the dicing tape 10, and then is sucked and held by the suction jig 45. In the pickup step, the speed of lifting the needle member 44 is, for example, 1 to 100 mm/sec, and the lifting amount of the needle member 44 is, for example, 50 to 3000 μm.

Then, as shown in fig. 9 (a), the picked-up semiconductor chip 31 with the adhesive layer is temporarily fixed to a predetermined adherend 51 via the adhesive layer 21. Examples of the adherend 51 include: lead frame, TAB (tape automated bonding; tape Automated Bonding) film, wiring substrate, and semiconductor chip manufactured separately. The shear adhesion force of the adhesive layer 21 at 25 ℃ at the time of temporary fixation is preferably 0.2MPa or more, more preferably 0.2 to 10MPa, with respect to the adherend 51. The configuration in which the shear adhesion force of the adhesive layer 21 is 0.2MPa or more is preferable for suppressing shear deformation of the adhesive surface between the adhesive layer 21 and the semiconductor chip 31 or the adherend 51 due to ultrasonic vibration and heating in the wire bonding step described later, and for suitably performing wire bonding. The shear adhesion force of the adhesive layer 21 at 175 ℃ at the time of temporary fixation is preferably 0.01MPa or more, more preferably 0.01 to 5MPa, with respect to the adherend 51.

Then, as shown in fig. 9 b, an electrode pad (not shown) of the semiconductor chip 31 and a terminal portion (not shown) of the adherend 51 are electrically connected by a bonding wire 52 (wire bonding step). The electrode pad of the semiconductor chip 31, the terminal portion of the adherend 51, and the bonding wire 52 may be connected by ultrasonic welding accompanied by heating, so that the adhesive layer 21 is not thermally cured. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire may be used. The wire heating temperature in wire bonding is, for example, 80 to 250 ℃, preferably 80 to 220 ℃. In addition, the heating time is several seconds to several minutes.

Then, as shown in fig. 9 (c), the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wires 52 on the adherend 51 (sealing step). In this step, the adhesive layer 21 is thermally cured. In this step, the sealing resin 53 is formed by a transfer molding technique using a mold, for example. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ℃, and the heating time is, for example, 60 seconds to several minutes. When the sealing resin 53 is not sufficiently cured in the present step (sealing step), a post-curing step for completely curing the sealing resin 53 is performed after the present step. Even in the case where the adhesive layer 21 is not completely thermally cured in the sealing process, the complete thermal curing of the adhesive layer 21 may be performed together with the sealing resin 53 in the post-curing process. In the post-curing step, the heating temperature is, for example, 165 to 185℃and the heating time is, for example, 0.5 to 8 hours.

As described above, a semiconductor device can be manufactured.

In the present embodiment, as described above, after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51, the wire bonding process is performed in a state where the adhesive layer 21 does not reach complete thermosetting. Instead of such a configuration, in the present invention, the semiconductor chip 31 with the adhesive layer may be temporarily fixed to the adherend 51, and then the wire bonding step may be performed after the adhesive layer 21 is thermally cured.

In the method for manufacturing a semiconductor device according to the present invention, the wafer thinning process shown in fig. 10 may be performed instead of the wafer thinning process described above with reference to fig. 4 (d). After the above-described process with reference to fig. 4 (c), in the wafer thinning step shown in fig. 10, the wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state where the semiconductor wafer W is held on the wafer processing tape T2, and the semiconductor wafer divided body 30B including the plurality of semiconductor chips 31 and held on the wafer processing tape T2 is formed. In this step, a method (1 st method) of grinding the wafer until the dividing groove 30a itself is exposed on the 2 nd surface Wb side may be adopted, or the following method may be adopted: the wafer is ground from the side of the 2 nd surface Wb until the wafer is ready to reach the dividing groove 30a, and then a crack is generated between the dividing groove 30a and the 2 nd surface Wb by the pressing force of the rotating grindstone on the wafer, thereby forming a semiconductor wafer divided body 30B (method 2). The depth from the 1 st plane Wa of the dividing groove 30a formed as described above with reference to fig. 4 (a) and 4 (b) is suitably determined according to the method employed. Fig. 10 schematically shows, with a thick line, the divided groove 30a formed by the method 1 or the divided groove 30a formed by the method 2, and a crack connected thereto. In the present invention, the semiconductor wafer segment 30B fabricated as described above may be bonded to the dicing die bonding film X instead of the semiconductor wafer 30A, and the steps described above with reference to fig. 5 to 9 may be performed.

Fig. 11 a and 11B show a 1 st expansion step (cooling expansion step) performed after the semiconductor wafer segment 30B is bonded to the dicing die bonding film X. In this step, the hollow cylindrical jack member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side in the drawing of the dicing die bonding film X and is lifted up, and the dicing tape 10 to which the dicing die bonding film X of the semiconductor wafer separator 30B is bonded is expanded in two dimensions including the radial direction and the circumferential direction of the semiconductor wafer separator 30B. The expansion is performed under conditions that generate a tensile stress in the dicing tape 10 in the range of, for example, 5 to 28MPa, preferably 8 to 25 MPa. The temperature conditions in this step are, for example, 0℃or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The expansion speed (the speed at which the jack-up member 43 is raised) in this step is, for example, 1 to 400 mm/sec. The expansion amount in this step is, for example, 50 to 200mm. Through such a cooling expansion step, the adhesive layer 20 of the dicing die bonding film X is cut into small pieces of the adhesive layer 21, thereby obtaining the semiconductor chip 31 with the adhesive layer. Specifically, in this step, the adhesive layer 20 that adheres to the adhesive layer 12 of the dicing tape 10 that has been expanded suppresses deformation in each region where each semiconductor chip 31 of the semiconductor wafer separator 30B adheres, but does not exert such deformation suppressing effect at the position facing the dividing groove 30a between the semiconductor chips 31, and the tensile stress that occurs in the dicing tape 10 in this state acts. As a result, the adhesive layer 20 is cut at a position facing the dividing grooves 30a between the semiconductor chips 31.

In the method for manufacturing a semiconductor device according to the present invention, instead of the above-described structure in which the semiconductor wafer 30A or the semiconductor wafer segment 30B is bonded to the dicing die bonding film X, the semiconductor wafer 30C manufactured in the following manner may be bonded to the dicing die bonding film X.

As shown in fig. 12 (a) and 12 (b), a modified region 30b is first formed in the semiconductor wafer W. The semiconductor wafer W has a 1 st surface Wa and a 2 nd surface Wb. Various semiconductor devices (not shown) have been mounted on the semiconductor wafer W on the 1 st surface Wa side, and wiring structures and the like (not shown) necessary for the semiconductor devices have been formed on the 1 st surface Wa. In this step, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the 1 st surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T3, and the laser beam having a converging point located inside the wafer is irradiated along the pre-dividing line from the opposite side to the wafer processing tape T3 to the semiconductor wafer W, whereby the modified region 30b is formed in the semiconductor wafer W by ablation due to multiphoton absorption. The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor chip units. The method of forming the modified region 30b on the pre-cut line in the semiconductor wafer by laser irradiation is described in detail in, for example, japanese unexamined patent publication No. 2002-192370, and the laser irradiation conditions in this embodiment can be appropriately adjusted within the following conditions, for example.

< laser irradiation Condition >)

(A) Laser light

(B) Condensing lens

Multiplying power is 100 times or less

NA 0.55

Transmittance to laser wavelength is 100% or less

(C) The movement speed of the stage on which the semiconductor substrate is mounted is 280 mm/sec or less

Next, as shown in fig. 12 (C), the semiconductor wafer W is thinned to a predetermined thickness by grinding from the 2 nd surface Wb in a state where the semiconductor wafer W is held on the wafer processing tape T3, whereby a semiconductor wafer 30C capable of being singulated into a plurality of semiconductor chips 31 is formed (wafer thinning step). In the present invention, the semiconductor wafer 30C fabricated as described above may be bonded to the dicing die bonding film X instead of the semiconductor wafer 30A, and the respective steps described above with reference to fig. 5 to 9 may be performed.

Fig. 13 (a) and 13 (b) show the 1 st expansion step (cooling expansion step) performed after the semiconductor wafer 30C is bonded to the dicing die bonding film X. In this step, the hollow cylindrical jack member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side in the drawing of the dicing die bonding film X and is lifted up, and the dicing tape 10 to which the dicing die bonding film X of the semiconductor wafer 30C is bonded is expanded in two dimensions including the radial direction and the circumferential direction of the semiconductor wafer 30C. The expansion is performed under conditions such that a tensile stress in the range of 5 to 28MPa, preferably 8 to 25MPa, is generated in the dicing tape 10. The temperature conditions in this step are, for example, 0℃or lower, preferably-20 to-5 ℃, more preferably-15 to-5 ℃, and still more preferably-15 ℃. The expansion speed (the speed at which the jack-up member 43 is raised) in this step is, for example, 1 to 400 mm/sec. The expansion amount in this step is, for example, 50 to 200mm. Through such a cooling expansion step, the adhesive layer 20 of the dicing die bonding film X is cut into small pieces of the adhesive layer 21, thereby obtaining the semiconductor chip 31 with the adhesive layer. Specifically, in this step, cracks are formed in the semiconductor wafer 30C at the fragile modified region 30b, and the semiconductor wafer is singulated into semiconductor chips 31. At the same time, in this step, the adhesive layer 20 adhered to the adhesive layer 12 of the dicing tape 10 to be expanded is inhibited from deforming in each region where each semiconductor chip 31 of the semiconductor wafer 30C is adhered, but such deformation inhibition is not generated at a position opposed to the crack formation position of the wafer, and in this state, the tensile stress generated in the dicing tape 10 acts. As a result, the adhesive layer 20 is cut at a position facing the crack formation position between the semiconductor chips 31.

In the present invention, the dicing die bonding film X can be used to obtain a semiconductor chip with an adhesive layer as described above, and can also be used to obtain a semiconductor chip with an adhesive layer when a plurality of semiconductor chips are stacked and 3-dimensional mounting is performed. The 3-dimensional semiconductor chips 31 may be sandwiched together with the adhesive layer 21 or may not be sandwiched therebetween.

Examples

[ example 1 ]

Manufacturing of cutting tape

In a reaction vessel equipped with a condenser, a nitrogen inlet, a thermometer and a stirring device, a mixture containing 100 parts by mol of dodecyl acrylate, 20 parts by mol of 2-hydroxyethyl acrylate (2 HEA), 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent with respect to 100 parts by mass of these monomer components was stirred (polymerization reaction) at 60℃under a nitrogen atmosphere for 10 hours. Thus, an acrylic polymer P was obtained ₁ Is a polymer solution of (a). Acrylic Polymer P in the Polymer solution ₁ The weight average molecular weight (Mw) of (C) was 45 ten thousand. Then, the acrylic polymer P is contained in an air atmosphere at room temperature ₁ The mixture of the polymer solution of (2) methacryloxyethyl isocyanate (MOI) and dibutyltin dilaurate as the catalyst for the addition reaction was stirred (addition reaction) for 48 hours. In the reaction solution, the reaction mixture is mixed with a catalyst, The MOI was blended in an amount of 20 parts by mole based on 100 parts by mole of the above-mentioned dodecyl acrylate, and the acrylic polymer P ₁ The molar ratio of the MOI compound to the total amount of units derived from 2HEA and/or hydroxyl groups thereof was 1. In addition, in the reaction solution, the compounding amount of dibutyltin dilaurate was relative to the acrylic polymer P ₁ 100 parts by mass is 0.03 parts by mass. By this addition reaction, an acrylic polymer P containing a methacrylate group in a side chain is obtained ₂ Is a polymer solution of (a). Then, a polymer P relative to the acrylic polymer is added to the polymer solution ₂ 100 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., ltd.) and 2 parts by mass of a photopolymerization initiator (trade name "Irgacure 127", manufactured by BASF Co.) were mixed, and toluene was added to the mixture so that the viscosity of the mixture at room temperature was 500 mPas, and the mixture was diluted to obtain a binder solution. Thereafter, an adhesive solution was applied to the silicone release treated surface of a PET separator (thickness 38 μm) having a surface subjected to silicone release treatment, using an applicator, to form a coating film, and the coating film was dried by heating at 130 ℃ for 2 minutes, to form an adhesive layer having a thickness of 10 μm on the PET separator. The thickness of the adhesive layer was measured using a dial gauge (trade name "C-7HS", manufactured by Kawasaki Co., ltd.). Then, a base material (trade name "RB-0104", thickness 130 μm, manufactured by Kyowa Kagaku Co., ltd.) made of ethylene-vinyl acetate copolymer (EVA) was laminated on the exposed surface of the pressure-sensitive adhesive layer at room temperature using a laminator. In the above manner, the dicing tape of example 1 was produced.

Adhesive layer production

Acrylic resin A ₁ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, weight average molecular weight of 120 ten thousand, glass transition temperature of 0 ℃ C., epoxy value of 0.4 eq/kg) 100 parts by mass of a phenol resin (trade name "8210DL", manufactured by Migrong chemical Co., ltd.) 25 parts by mass of an epoxy resin (trade name "KI-3000", manufactured by Mitsubishi chemical Co., ltd.) 25 parts by mass of a phenol resin was added to methyl ethyl ketone and mixedThe concentration was adjusted so that the viscosity at room temperature was 700 mPas, thereby obtaining an adhesive composition. Next, an adhesive composition was applied to the silicone release treated surface of the PET separator (thickness 38 μm) having the silicone release treated surface, using an applicator, to form a coating film, and the coating film was dried by heating at 130 ℃ for 2 minutes. In the above manner, an adhesive layer having a thickness of 7 μm was formed on a PET separator in example 1. The thickness of the adhesive layer was measured using a dial gauge (trade name "C-7HS", manufactured by Kawasaki Co., ltd.).

Cutting chip bonding film

After the PET separator was peeled off from the dicing tape, the adhesive layer exposed on the dicing tape and the adhesive layer with the separator were bonded at room temperature using a laminator to obtain a laminated sheet. Then, the laminated sheet is subjected to punching processing for allowing a processing blade to enter from the EVA base material side of the dicing tape until reaching the separator. Thus, a dicing die-bonding film in the shape of a disk having a diameter of 370mm was formed on the separator.

[ example 2 ]

An adhesive layer of example 2 was produced on a PET separator in the same manner as the adhesive layer of example 1 except that the thickness of the adhesive layer was changed from 7 μm to 10 μm. The dicing die-bonding film of example 2 was produced in the same manner as the dicing die-bonding film of example 1 except that the adhesive layer of example 2 was used instead of the adhesive layer of example 1.

[ example 3 ]

An adhesive layer of example 3 was produced on a PET separator in the same manner as the adhesive layer of example 1 except that the thickness of the adhesive layer was changed from 7 μm to 20 μm. The dicing die-bonding film of example 3 was produced in the same manner as the dicing die-bonding film of example 1 except that the adhesive layer of example 3 was used instead of the adhesive layer of example 1.

Comparative examples 1 and 2

In the production of the adhesive layer, dicing tapes and adhesive layers (die bonding films) were punched and bonded to each other in different sizes, except that the thickness of the adhesive layer was changed from 10 μm to 20 μm (comparative example 1) or 7 μm (comparative example 2), and the dicing die bonding films of comparative examples 1 and 2 were produced in the same manner as the dicing die bonding film of example 1. In comparative examples 1 and 2, the dicing tapes were punched out with spacers to have diameters of 370mm, and the die bonding films were punched out with spacers to have diameters of 330mm. The dicing tape is bonded while being aligned so that the center of the dicing tape coincides with the center of the die bonding film.

[ comparative example 3 ]

In the production of the adhesive layer, the dicing die-bonding film of comparative example 3 was produced in the same manner as the dicing die-bonding film of example 1 except that the thickness of the adhesive layer was changed from 10 μm to 5 μm (comparative example 3), the dicing tape and the adhesive layer (die-bonding film) were punched and processed to be bonded to each other in different sizes, and ultraviolet rays were irradiated from the base material side to the adhesive layer in the dicing tape. The dicing tape was punched out to have a diameter of 370mm with the separator, and the die bonding film was punched out to have a diameter of 330mm with the separator. The dicing tape is bonded while being aligned so that the center of the dicing tape coincides with the center of the die bonding film. In addition, at the time of ultraviolet irradiation, a high-pressure mercury lamp was used to set the cumulative irradiation light quantity to 350mJ/cm ² . In the above manner, the dicing die-bonding film of comparative example 3 having a laminated structure including the dicing tape and the adhesive layer was produced.

[ tensile stress at 15 ℃ below zero ]

The 1 st test piece cut from the outer peripheral end of each dicing die-bonding film of examples 1 to 3 and comparative examples 1 to 3 to the outer region 20mm inward was subjected to a tensile test using a tensile tester (trade name "Autograph AGS-J", manufactured by shimadzu corporation) to measure tensile stress generated at a strain value of 30%. Each 1 st test piece had a length of 50mm and a width of 10mm extending in the MD direction in the outer region of the dicing die-bonding film. For each of the dicing die-bonding films of examples 1 to 3 and comparative examples 1 to 3, 5 1 st test pieces were prepared. In the present tensile test, the distance between the initial clamps was 20mm, the temperature condition was-15℃and the tensile speed was 300 mm/min. The average value of the measured values from the 5 1 st test pieces of the same dicing die-bonding film was used as the tensile stress (1 st tensile stress) of the 1 st test piece of the dicing die-bonding film at-15 ℃. The obtained values of the 1 st tensile stress are shown in table 1.

The 2 nd test piece cut from the inner region of each dicing die-bonding film of examples 1 to 3 and comparative examples 1 to 3 located inside the outer region was subjected to a tensile test using a tensile tester (trade name "Autograph AGS-J", manufactured by shimadzu corporation) to measure tensile stress generated at a strain value of 30%. Each of the 2 nd test pieces had a length of 50mm and a width of 10mm extending in the MD direction in the inner region of the dicing die-bonding film. For each of the dicing die-bonding films of examples 1 to 3 and comparative examples 1 to 3, 5 pieces of the 2 nd test piece were prepared. In the present tensile test, the distance between the initial clamps was 20mm, the temperature condition was-15℃and the tensile speed was 300 mm/min. The average value of the measured values from the 5 nd test pieces of the same dicing die-bonding film was used as the tensile stress (2 nd tensile stress) of the 2 nd test piece of the dicing die-bonding film at-15 ℃. The values of the obtained 2 nd tensile stress are shown in table 1. The ratio of the 2 nd tensile stress to the 1 st tensile stress is also shown in table 1.

[ tensile stress at 23 ]

The 1 st test piece cut from the outer peripheral end of each dicing die-bonding film of examples 1 to 3 and comparative examples 1 to 3 to the outer region 20mm inward was subjected to a tensile test using a tensile tester (trade name "Autograph AGS-J", manufactured by shimadzu corporation) to measure tensile stress generated at a strain value of 30%. Each 1 st test piece had a length of 50mm and a width of 10mm extending in the MD direction in the outer region of the dicing die-bonding film. For each of the dicing die-bonding films of examples 1 to 3 and comparative examples 1 to 3, 5 1 st test pieces were prepared. In the present tensile test, the distance between the initial clamps was 20mm, the temperature condition was 23℃and the tensile speed was 300 mm/min. The average value of the measured values from the 5 1 st test pieces of the same dicing die-bonding film was used as the tensile stress (3 rd tensile stress) of the 1 st test piece of the dicing die-bonding film at 23 ℃. The obtained values of the 3 rd tensile stress are shown in table 1.

The 2 nd test piece cut from the inner region of each dicing die-bonding film of examples 1 to 3 and comparative examples 1 to 3 located inside the outer region was subjected to a tensile test using a tensile tester (trade name "Autograph AGS-J", manufactured by shimadzu corporation) to measure tensile stress generated at a strain value of 30%. Each of the 2 nd test pieces had a length of 50mm and a width of 10mm extending in the MD direction in the inner region of the dicing die-bonding film. For each of the dicing die-bonding films of examples 1 to 3 and comparative examples 1 to 3, 5 pieces of the 2 nd test piece were prepared. In the present tensile test, the distance between the initial clamps was 20mm, the temperature condition was 23℃and the tensile speed was 300 mm/min. The average value of the measured values from the 5 nd test pieces of the same dicing die-bonding film was used as the tensile stress (4 th tensile stress) of the 2 nd test piece of the dicing die-bonding film at 23 ℃. The obtained values of the 4 th tensile stress are shown in table 1. The ratio of the 4 th tensile stress to the 3 rd tensile stress is also shown in table 1.

Adhesive force of adhesive layer

The adhesive layers of the dicing die bonding films of examples 1 to 3 and comparative examples 1 to 3 were examined for 180 ° peel adhesion at-15 ℃ in the following manner. First, the adhesive layer was peeled off from the dicing tape, and a backing tape (trade name "BT-315", manufactured by Nito electric Co., ltd.) was attached to the surface of the adhesive layer on the dicing tape side, and a sample piece (width 10 mm. Times.length 100 mm) was cut from the backing film. Then, the sample piece was attached to an SUS plate as an adherend, and the sample piece was pressure-bonded to the adherend by a pressure-bonding operation performed by reciprocating a 2kg roller 1 time. After that, the sample sheet was left at room temperature for 30 minutes, and then 180 ° peel adhesion of the adhesive layer sample sheet to the SUS plate was measured using a tensile tester (trade name "Autograph AGS-J", manufactured by shimadzu corporation). In the present measurement, the measurement temperature and/or the peeling temperature were-15 ℃, the stretching angle was 180 °, and the stretching speed was 300 mm/min. The average value of the peel force excluding the peel force shown at the first 10 mm/min in the tensile test was taken as 180℃peel adhesion (N/10 mm). The 180 ° peel adhesion at 23 ℃ was measured in the same manner as the 180 ° peel adhesion at-15 ℃ except that the measurement temperature was changed from-15 ℃ to 23 ℃ for the adhesive layers of the dicing die bonding films of examples 1 to 3 and comparative examples 1 to 3. The measurement results are shown in Table 1.

[ evaluation of severance ]

The following bonding step, the 1 st expansion step (cooling expansion step) for dicing, and the 2 nd expansion step (room temperature expansion step) for partitioning were performed using the dicing die bonding films of examples 1 to 3 and comparative examples 1 to 3.

In the bonding step, a semiconductor wafer separator held by a wafer processing tape (trade name "UB-3083D", manufactured by nito corporation) is bonded to the adhesive layer of the dicing die bonding film, and then the wafer processing tape is peeled from the semiconductor wafer separator. In bonding, a laminator was used, the bonding speed was set to 10 mm/sec, the temperature condition was set to 60℃and the pressure condition was set to 0.15MPa. In addition, the semiconductor wafer separator is formed and prepared as follows. First, a dicing groove (width 25 μm, depth 50 μm, one division is a lattice shape of 6mm×12 mm) for singulation was formed on a bare wafer (diameter 12 inches, thickness 780 μm, manufactured by tokyo chemical company, ltd.) held together with a ring frame in a state of a wafer processing tape (trade name "V12S-R2-P", manufactured by ridong electric company, ltd.) by using a dicing device (trade name "DFD6260", manufactured by DISCO Corporation) from one side thereof by a rotating blade. Then, after the dicing groove forming surface was bonded to a wafer processing tape (trade name "UB-3083D", manufactured by niton electric corporation), the wafer processing tape (trade name "V12S-R2-P") was peeled off from the wafer. Then, the wafer was thinned to a thickness of 20 μm by grinding from the other surface (surface not formed with a dividing groove) side of the wafer using a back surface grinding device (manufactured by trade name "DGP8760", DISCO Corporation), and then the ground surface was subjected to mirror finishing by dry polishing using the same device. In the above manner, the semiconductor wafer divided bodies (held by the wafer processing tape) are formed. The semiconductor wafer divided body includes a plurality of semiconductor chips (6 mm×12 mm).

The cooling and expanding step was performed by using a mold separator (trade name "Die Separator DDS2300", manufactured by DISCO Corporation) and a cooling and expanding unit thereof. Specifically, first, a ring-shaped frame made of SUS (manufactured by DISCO Corporation) having a diameter of 12 inches was attached to a frame attaching region (the periphery of a work attaching region) of the adhesive layer in the dicing die bonding film with the semiconductor wafer separator at room temperature. Then, the dicing die bonding film is set in a device, and a dicing tape of the dicing die bonding film with the semiconductor wafer dividing body is expanded by a cooling expansion unit of the device. In the cooling expansion step, the temperature was-15 ℃, the expansion speed was 100 mm/sec, and the expansion amount was 7mm.

The room temperature expansion step was performed using a mold separator (trade name "Die Separator DDS2300", manufactured by DISCO Corporation) and a room temperature expansion unit thereof. Specifically, the dicing tape of the dicing die-bonding film with the semiconductor wafer separator subjected to the cooling and expanding step is expanded by the room temperature expanding means of the apparatus. In this room temperature expansion step, the temperature was 23 ℃, the expansion rate was 1 mm/sec, and the expansion amount was 10mm. Then, the dicing die-bonding film subjected to the room-temperature expansion is subjected to heat shrinkage treatment. The treatment temperature is 200 ℃ and the treatment time is 20 seconds.

The ratio of the total number of semiconductor chips with the adhesive layer severed to the total number of semiconductor chips contained in the semiconductor wafer divided bodies at the stage subjected to the above process using the dicing die bonding films of examples 1 to 3 and comparative examples 1 to 3 was studied. The adhesive layer was evaluated as good (o) when the ratio was 80% or more, and as poor (x) when the ratio was less than 80%. The evaluation results are shown in table 1.

[ evaluation ]

In the dicing die-bonding films of examples 1 to 3, the ratio of the 2 nd tensile stress to the 1 st tensile stress was in the range of 0.9 to 1.1. The dicing die bonding films of examples 1 to 3 were more excellent in dicing (dicing) into semiconductor chips with an adhesive layer in an expansion step at-15 ℃ than the dicing die bonding films of comparative examples 1 to 3 in which the ratio of the 2 nd tensile stress to the 1 st tensile stress was not in the range of 0.9 to 1.1.

TABLE 1

Claims

1. A dicing die bonding film, comprising:

a dicing tape having a laminated structure including a base material and an adhesive layer; and

an adhesive layer that is peelably bonded to the adhesive layer in the dicing tape,

The thickness of the dicing die-bonding film is the same in an outer region from the outer peripheral end up to 20mm inward and in an inner region further inward than the outer region,

the ratio of the 2 nd tensile stress generated at a strain value of 30% in a tensile test performed on the 2 nd test piece under the conditions of an initial distance of 20mm, -15 ℃ and a tensile speed of 300 mm/min to the 1 st tensile stress generated at a strain value of 30% in a tensile test performed on the 1 st test piece under the conditions of an initial distance of 20mm, -15 ℃ and a tensile speed of 300 mm/min is 0.9 to 1.1,

test piece 1: a test piece cut from the outer side region and having a length of 50mm and a width of 10mm extending in one direction,

test piece 2: a test piece cut from the inner side region and having a length of 50mm and a width of 10mm extending in the one direction.

2. The dicing die-bonding film according to claim 1, wherein the 1 st tensile stress and the 2 nd tensile stress are 5 to 28N.

3. The dicing die-bonding film according to claim 1, wherein the adhesive layer exhibits 180 ° peel adhesion to SUS plane of 1N/10mm or more in peel test under conditions of-15 ℃ and peel angle of 180 ° and tensile speed of 300 mm/min.

4. The dicing die-bonding film according to claim 2, wherein the adhesive layer exhibits 180 ° peel adhesion to SUS plane of 1N/10mm or more in peel test under conditions of-15 ℃ and peel angle of 180 ° and tensile speed of 300 mm/min.

5. The dicing die-bonding film according to claim 1, wherein the 3 rd tensile stress generated at a strain value of 30% in the tensile test performed on the 1 st test piece under the conditions of 20mm, 23 ℃ and a tensile speed of 300 mm/min between the initial jigs, and the 4 th tensile stress generated at a strain value of 30% in the tensile test performed on the 2 nd test piece under the conditions of 20mm, 23 ℃ and a tensile speed of 300 mm/min between the initial jigs are 1 to 20N.

6. The dicing die-bonding film according to claim 5, wherein the ratio of the 4 th tensile stress to the 3 rd tensile stress is 0.95 to 1.05.

7. The dicing die-bonding film according to claim 2, wherein the 3 rd tensile stress generated at a strain value of 30% in the tensile test performed on the 1 st test piece under the conditions of 20mm, 23 ℃ and a tensile speed of 300 mm/min between the initial jigs, and the 4 th tensile stress generated at a strain value of 30% in the tensile test performed on the 2 nd test piece under the conditions of 20mm, 23 ℃ and a tensile speed of 300 mm/min between the initial jigs are 1 to 20N.

8. The dicing die-bonding film according to claim 7, wherein the ratio of the 4 th tensile stress to the 3 rd tensile stress is 0.95 to 1.05.

9. The dicing die-bonding film according to claim 1, wherein the adhesive layer exhibits 180 ° peel adhesion to SUS plane of 0.1N/10mm or more in peel test under conditions of 23 ℃ and peel angle 180 ° and tensile speed of 300 mm/min.

10. The dicing die-bonding film according to any one of claims 1 to 9, having a laminated structure including the base material, the adhesive layer, and the adhesive layer and continuing in the inner region and the outer region.

11. The dicing die-bonding film according to any one of claims 1 to 9, wherein an outer peripheral end of the adhesive layer is located at a distance of 1000 μm or less from the outer peripheral end of the adhesive layer in the film in-plane direction.

12. The dicing die-bonding film according to claim 10, wherein the outer peripheral end of the adhesive layer is located at a distance of 1000 μm or less from the outer peripheral end of the adhesive layer in the film in-plane direction.