TW201919104A - Method for manufacturing display device, method for transferring chip component, and transfer member - Google Patents

Abstract

Provided is a method for manufacturing a display device in which a chip component is transferred reliably to a desired position on a drive circuit board, the accuracy of pixel arrangement is high, and manufacturing yield is high. The present invention includes steps for: bringing a drive circuit board provided with an anisotropic conductive film and a substrate for transfer to which a chip component has been transferred closer together, and causing the anisotropic conductive film to come in contact with the chip component; subsequently thermocompression-bonding the substrate for transfer and the drive circuit board together and causing thermally expandable particles to thermally expand; and then separating a transfer member layer from the chip component and transferring the chip component to the drive circuit board.

Description

Method for manufacturing display device, method for transferring wafer parts, and transfer member

The present invention relates to a method for manufacturing a display device, a method for transferring a wafer part, and a transfer member.

For next-generation display devices, micro-LED displays have attracted much attention. A micro-LED display refers to a display device in which each pixel is a fine light-emitting diode (hereinafter referred to as an LED) chip, and the LED chip is fully spread on the surface of the display substrate at a high density. In the manufacture of the micro-LED display as shown above, it is extremely important to arrange the LED wafers with high accuracy and certainty on the surface of the display substrate.

As a transfer technology for conveying a wafer component and disposing it on a substrate surface, for example, a technology using a transfer tool disclosed in Patent Document 1 is known. This transfer tool includes an electrostatic transfer head array that captures wafer components. In the manufacture of actual micro LED displays, a transfer method with a small influence on static electricity damage and the like to an LED wafer as an electronic component is expected.

Regarding the transfer method of the LED wafer as described above, a method having the following processes (1) to (4) has been proposed. (1) First, most LED wafers are arranged on a temporary substrate-side adhesive layer provided on the surface of a temporary substrate. (2) Next, after the LED wafer is stuck on the transfer adhesive layer provided on the surface of the transfer plate, the transfer plate is lifted. Thereby, the LED wafer is peeled from the temporary substrate-side adhesive layer of the temporary substrate. That is, the LED wafer is moved from the temporary substrate side to the transfer plate side. (3) Next, a TFT (Thin Film transistor) substrate is prepared. An anisotropic conductive film is disposed on the surface of the TFT substrate on which the LED wafer is mounted. After the above-mentioned transfer plate is disposed to face the TFT substrate, the transfer plate is brought into close proximity with the TFT substrate, and the LED wafer is brought into contact with the anisotropic conductive film. (4) Thereafter, the TFT substrate and the transfer plate are thermally pressure-bonded to pass the LED chip to the drive circuit on the TFT substrate side, and then the transfer adhesive layer of the transfer plate is peeled from the LED wafer. . In this process, the LED wafer is transferred from the transfer substrate to the drive circuit substrate. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Publication No. 2015-529400

(Problems to be solved by the invention)

In the above-mentioned LED wafer transfer method, it is necessary to set the relative adhesive strength between the three adhesive layers, such as the temporary substrate-side adhesive layer, the transfer adhesive layer, and the anisotropic conductive film, as follows. That is, the adhesive force between the transfer adhesive layer and the LED wafer must be set to be greater than the adhesive force between the temporary substrate-side adhesive layer and the LED wafer. The adhesive force between the anisotropic conductive film and the LED wafer must be set to be greater than the adhesive force between the transfer adhesive layer and the LED wafer.

In the transfer method as described above, the adhesive force of each of the adhesive materials used in the temporary substrate-side adhesive layer, the transfer adhesive layer, and the anisotropic conductive film is not uniform, which makes it impossible. The problem of smoothly transferring the LED wafer. The unevenness of the adhesive force of the adhesive material is caused by the deviation of the performance of each production batch of the adhesive, the film-forming state of the adhesive layer, and the change with time. Therefore, when a display device is manufactured using the transfer method described above, there is a problem that the yield is low. In addition, in the method of manufacturing a display device using the above-mentioned transfer method, if the adhesive force of the transfer adhesive layer has the same adhesive force as that of the anisotropic conductive film, the anisotropically conductive LED chip may occur. Problems such as film detachment, or positional deviation of the LED wafer on the anisotropic conductive film.

The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a method for manufacturing a display device capable of reliably transferring a wafer component to a desired position on a driving circuit board and having a high yield. An object of the present invention is to provide a transfer method capable of reliably transferring a wafer component to a desired position on a drive circuit board. Another object of the present invention is to provide a transfer member capable of reliably transferring a wafer component. (Means for solving problems)

In order to solve the above problems and achieve the object, a first aspect of the present invention is a method for manufacturing a display device, which includes a process of disposing a wafer component constituting a pixel on a temporary substrate; A process in which a transfer substrate in a transfer member layer in which thermally expandable particles are dispersed in a transfer member of a thermoplastic adhesive is brought into close proximity with the temporary substrate, and the transfer member layer is adhered to the wafer component; A process in which the transfer substrate is separated from the temporary substrate, the wafer component is peeled off from the temporary substrate side, and transferred to the transfer substrate side; driving for disposing a thermoplastic anisotropic conductive film on the surface A process in which a circuit substrate is brought into close contact with the transfer substrate and the anisotropic conductive film is brought into contact with the wafer component; and after the transfer substrate and the drive circuit substrate are thermally pressure-bonded to thermally expand the thermally expandable particles Separating the transfer substrate from the drive circuit substrate, peeling the transfer member layer from the wafer component, and separating the crystal Process for transferring sheet parts to the drive circuit board side.

In the first aspect, it is preferable that the thermally expandable particles are capsule-shaped spheres in which a shell is formed of a thermoplastic resin, and a low-boiling point material is sealed inside.

In the first aspect, it is preferable that the heat-expandable particles are capsule-shaped spheres in which a shell is formed of a thermoplastic resin, and a gas is sealed inside.

In the first aspect, it is preferable that the wafer component is a micro LED wafer.

In the first aspect, a protective resin layer made of a thermoplastic resin is preferably laminated on the anisotropic conductive film.

A second aspect of the present invention is a method for transferring a wafer part, which includes a process of disposing a wafer part on a temporary substrate, and disposing a thermally-expandable particle along a substrate surface along with a thermoplastic adhesive. A process in which the transfer substrate of the transfer member layer formed by the transfer member is in close contact with the temporary substrate, and the wafer component is adhered to the transfer member layer; the transfer substrate is separated from the temporary substrate, A process in which the wafer component is peeled from the temporary substrate side and transferred to the transfer substrate side; a driving circuit substrate having a thermoplastic anisotropic conductive film disposed on the surface thereof is brought close to the transfer substrate, And a process of bringing the anisotropic conductive film into contact with the wafer component; and thermally expanding the thermally expandable particles by thermally pressing the transfer substrate and the drive circuit substrate to thermally expand the thermally expandable particles, and then transferring the transfer substrate and the drive circuit. A process in which the substrates are separated, the transfer member layer is peeled from the wafer component, and the wafer component is transferred to the drive circuit substrate side.

In the second aspect, it is preferable that the thermally expandable particles are capsule-shaped spheres in which a shell is formed of a thermoplastic resin, and a low-boiling point material is sealed inside.

In the second aspect, it is preferable that the heat-expandable particles are capsule-shaped spheres in which a shell is formed of a thermoplastic resin, and a gas is sealed inside.

A third aspect of the present invention is a transfer member, which is a transfer member that is used for the transfer of the wafer component after the wafer component is peeled off from the wafer component, and the thermally expansive particles are dispersed in the thermoplastic adhesive. The heat-expandable particles are capsule-shaped spheres made of a thermoplastic resin with an outer shell, and a gas or a low-boiling point material is sealed inside. (Effect of the invention)

According to the manufacturing method of the display device of the present invention, it is possible to realize a manufacturing method of a display device in which a wafer component is surely transferred to a desired position on a driving circuit substrate, the pixel arrangement accuracy is high, and the manufacturing yield is high. With the transfer method of the wafer component of the present invention, a transfer method capable of reliably transferring the wafer component to a desired position of the driving circuit board can be realized. With the transfer member of the present invention, the wafer component can be transferred with certainty.

Hereinafter, a method for manufacturing a display device according to an embodiment of the present invention, a method for transferring a wafer part, and a transfer member will be described in detail with reference to the drawings. However, it should be noted that those shown as patterns are different from each other in size, ratio, shape, and the like of each member. In addition, the drawings also include portions having different dimensional relationships, ratios, or shapes.

[Embodiment] Hereinafter, a method for manufacturing a display device according to this embodiment will be described using FIGS. 1 to 9. Among them, the present embodiment is a method for transferring a wafer component of the present invention and a method for manufacturing a display device of a transfer member. In this embodiment, a micro-LED display is used as a display device.

First, as shown in FIG. 1, a temporary substrate 1 is prepared. The temporary substrate 1 is provided with a temporary substrate-side adhesive layer 2 having a small adhesive force on one substrate surface. A plurality of wafer components 3 are arranged on the temporary substrate 1 at a predetermined arrangement interval. Among them, the wafer component 3 used in this embodiment is a micro LED wafer constituting a pixel of a display device. The arrangement area where the plurality of wafer components 3 are temporarily arranged on the surface of the temporary substrate 1 is set to have the same vertical and horizontal dimensions as the display area of the micro LED display.

In this embodiment, as shown in FIG. 1, the electrodes 31 and 32 are formed on the lower surface of the wafer component 3 so as to protrude downward. The electrodes 31 and 32 are adhered to the temporary adhesive layer 2 on the temporary substrate side with a small adhesive force. However, if the electrodes of the wafer component 3 are exposed below the wafer component 3, they are not limited to the arrangement positions of the electrodes 31 and 32 shown in the figure.

Next, as shown in FIG. 1, a transfer substrate 5 is prepared. The transfer substrate 5 is provided with a transfer member layer 4 along one substrate surface. The transfer member layer 4 is formed of a transfer member 43 in which thermally expandable particles 42 are dispersed in a thermoplastic adhesive 41. Among them, the thermoplastic adhesive 41 is set to have a very large adhesive force compared to the adhesive constituting the temporary substrate-side adhesive layer 2 provided on the temporary substrate 1 side.

Here, the thermally expandable particles 42 will be described using FIG. 9. FIG. 9 is a cross-sectional explanatory view showing the normal state and the expanded state of the thermally expandable particles 42 according to this embodiment. The heat-expandable particles 42 are spheroids, and the casing 44 is formed into a capsule shape using a thermoplastic resin. Air 45 is sealed inside the casing 44.

Among the heat-expandable particles 42 shown in FIG. 9, the air 45 is sealed inside the casing 44, but a gas other than air or a low-boiling-point solvent may be sealed. Among them, if a low-boiling-point solvent is used, a small amount of a low-boiling-point solvent may be sealed inside the casing 44.

When the heat-expandable particles 42 are heated, as shown on the right side of the thick arrow in FIG. 9, the air 45 or the low-boiling-point solvent inside the casing 44 expands to increase the diameter dimension. When the thermally expandable particles 42 are cooled from a state where they are heated and expanded, they shrink and return to the original state of the thermally expandable particles 42 having a small diameter.

Next, using the transfer substrate 5 described above, the wafer component 3 on the temporary substrate 1 is transferred. As shown in FIG. 2, the transfer substrate 5 and the temporary substrate 1 are brought into close proximity, whereby the transfer member layer 4 of the transfer substrate 5 is adhered to the upper surface of the wafer component 3 on the temporary substrate 1. Thereafter, as shown in FIG. 3, the wafer component 3 is separated from the temporary substrate-side adhesive layer 2 by separating the transfer substrate 5 from the temporary substrate 1. Here, since the adhesive force of the transfer member layer 4 is significantly stronger than that of the temporary substrate-side adhesive layer 2, the wafer component 3 is easily peeled from the temporary substrate-side adhesive layer 2. As described above, the wafer component 3 is transferred from the temporary substrate 1 side to the transfer substrate 5 side. The proximity and separation between the transfer substrate 5 and the temporary substrate 1 may be any of the forms in which the temporary substrate 1 is moved relative to the transfer substrate 5 or the transfer substrate 5 is moved relative to the temporary substrate 1. By.

Next, as shown in FIG. 4, a TFT (Thin Film transistor) substrate 6 as a driving circuit substrate is prepared. A driving circuit (not shown) is formed on the TFT substrate 6. The TFT substrate 6 is provided with pads 61 and 62 on the surface on which the wafer component 3 is mounted. These pads 61 and 62 are arranged so that connection with the electrodes 31 and 32 of the wafer component 3 can be achieved. An anisotropic conductive film 7 is disposed on the surface of the TFT substrate 6 on the side where the pads 61 and 62 are provided. As shown in FIG. 4, the transfer substrate 5 is moved so as to face the TFT substrate 6.

Next, as shown in FIG. 5, the transfer substrate 5 and the TFT substrate 6 are brought into close proximity, and the electrodes 31 and 32 of the wafer component 3 are brought into contact with the anisotropic conductive film 7. Next, a hot press is performed on the transfer substrate 5 and the TFT substrate 6 under appropriate pressure conditions and temperature conditions.

With this, as shown in FIG. 6, the conductive particles (not shown) of the anisotropic conductive thin film 7 are formed by bonding between the electrode 31 and the bonding pad 61 and between the electrode 32 and the bonding pad 62, and are formed. Conductive regions 71, 72. Therefore, the drive circuit side and the wafer component 3 side are conducted. On the transfer substrate 5 side, the thermoplastic adhesive 41 constituting the transfer member layer 4 is plasticized, and the thermally expandable particles 42 are thermally expanded to become larger.

As described above, when the thermally expandable particles 42 become larger, the surface of the transfer member layer 4 becomes rough, the area of contact with the wafer component 3 decreases, and the adhesion force also decreases. Therefore, the transfer member layer 4 can be easily peeled from the upper surface of the wafer component 3. Therefore, as shown in FIG. 7, by separating the transfer substrate 5 from the TFT substrate 6, the wafer component 3 can be easily peeled off from the transfer member layer 4 of the transfer substrate 5 and transfer can be smoothly performed.

Among them, as shown in FIG. 8, the thermally expandable particles 42 are contracted and returned to their original volume as the temperature decreases. In addition, the thermoplastic adhesive 41 also returns to the state before heating as the temperature decreases. Therefore, the transfer substrate 5 can be used repeatedly.

With the manufacturing method of the display device of this embodiment, the wafer component 3 can be surely transferred to a desired position of the TFT substrate 6, and the accuracy of the pixel arrangement of the micro LED display can be improved. In addition, with the method for manufacturing a display device of this embodiment, the wafer component 3 can be smoothly transferred, so that the manufacturing yield can be improved.

The method for manufacturing the display device in this embodiment described above is explained by applying the method for transferring a wafer component of the present invention. The transfer method of the wafer part in this embodiment is as follows.

(Transferring Method of Wafer Parts) 转印 The transfer method of wafer parts of this embodiment includes a process of disposing the wafer parts 3 on the temporary substrate 1 and disposing the thermally expandable particles 42 along the surface of the substrate. The process of transferring the transfer substrate layer 5 of the transfer member layer 4 formed by the transfer member 43 of the thermoplastic adhesive 41 to the temporary substrate 1 and bonding the transfer member layer 4 to the wafer part 3; 5 is separated from the temporary substrate 1 and the wafer part 3 is peeled off from the temporary substrate 1 side and transferred to the transfer substrate 5 side; the surface is provided with an anisotropic conductive thin film 7 as a driving circuit A process in which the TFT substrate 6 of the substrate is in close contact with the transfer substrate 5 and the anisotropic conductive film 7 is brought into contact with the wafer component 3; and the thermally expandable particles 42 are thermally bonded to the transfer substrate 5 and the TFT substrate 6 After the thermal expansion, the transfer substrate 5 and the TFT substrate 6 are separated, and the transfer member layer 4 is peeled from the wafer component 3 to transfer the wafer component 3 to the TFT substrate 6 side.

In the method for transferring a wafer component in this embodiment, the wafer component is not limited to a light-emitting element constituting a pixel constituting a display device, and can also be applied to substrate assembly of various semiconductor wafers.

[Other Embodiments] Embodiments have been described above, but it should not be understood that the discussions and illustrations of the partially disclosed formations of these embodiments are limited to the inventors. From this disclosure, those skilled in the art in this field should be aware of various alternative implementation forms, examples, and application techniques.

For example, in the method for manufacturing a display device according to the above-mentioned embodiment, the arrangement area of the wafer component 3 in the temporary substrate 1 is set to have the same vertical and horizontal size as the display area of the micro LED display. Therefore, it is possible to collectively transfer a plurality of wafer parts 3 constituting all pixels. However, in the manufacturing method of the display device of the present invention, it is also possible to form a configuration in which the display area of the TFT substrate 6 is transferred to the plurality of transfer substrates 5 and the wafer components 3 are transferred. That is, if a plurality of transfer substrates 5 can be used and the display area of the TFT substrate 6 can be captured by the wafer component 3, the transfer substrate 5 may not be a single transfer substrate 5.

In the above-described embodiment, the heat-expandable particles 42 constituting the transfer member 43 have a structure in which air or a low-boiling-point solvent is sealed inside the casing 44, but gases other than air may be sealed. Alternatively, as shown in the thermally expandable particles 42A shown in FIG. 10, a solid material 46 such as a metal having a large thermal expansion coefficient is filled in the case 44. In addition, the heat-expandable particles may be formed in a structure in which a porous structure having elasticity is formed inside the casing, and the porous structure contains a gas or a low-boiling point solvent.

In the manufacturing method of the display device of the above embodiment, the anisotropic conductive film 7 is provided on the TFT substrate 6, but as shown in FIG. 11, a layer having a passivation function may be laminated on the anisotropic conductive film 7. Protective resin layer 8. As shown in FIG. 12, if a protective resin layer 8 is laminated, when the transfer substrate 5 is overlapped with the TFT substrate 6 for thermocompression bonding, the protective resin layer 8 covers the lower surface of the wafer component 3, so that the wafer component is suppressed. The effect of deterioration of the electrodes 31, 32 of 3 or the lower surface of the wafer component 3.

In the method for manufacturing a display device according to the above embodiment, the description is made by applying the TFT substrate 6 as a driving circuit substrate. However, the present invention is of course applicable to a driving method of a display device and includes driving without using a TFT as a switching element. Circuit board for driving circuit.

In addition, in the method for manufacturing a display device according to the above-mentioned embodiment, thermocompression bonding may be performed on the transfer substrate 5 on which the wafer component 3 is transferred, with the TFT substrate 6 mounted thereon, and thereafter. The operation of raising the TFT substrate 6.

In the manufacturing method of the display device according to the above embodiment, the temporary substrate 1 is provided with the temporary substrate-side adhesive layer 2 on the temporary substrate 1. However, the wafer component 3 may be disposed on the temporary substrate 1 without the temporary substrate-side adhesive layer 2. The structure on the substrate 1 is temporary.

1‧‧‧Temporary substrate

2‧‧‧Temporary substrate side adhesive layer

3‧‧‧Chip Parts

4‧‧‧ transfer member layer

5‧‧‧ transfer substrate

6‧‧‧TFT substrate (driving circuit substrate)

7‧‧‧ Anisotropic conductive film

8‧‧‧ protective resin layer

31, 32‧‧‧ electrodes

41‧‧‧ Thermoplastic Adhesive

42, 42A‧‧‧ Thermally expandable particles

43‧‧‧transfer member

44‧‧‧Shell

45‧‧‧ air

46‧‧‧Solid Matter

61, 62‧‧‧ pads

71, 72‧‧‧ conductive area

FIG. 1 is a process cross-sectional explanatory view showing a state in which a temporary substrate and a transfer substrate face each other in a method for manufacturing a display device according to an embodiment of the present invention. FIG. 2 is an engineering cross-sectional explanatory view showing a state in which a transfer member layer of a transfer substrate is adhered to an upper surface of a wafer component on a temporary substrate side in a method for manufacturing a display device according to an embodiment of the present invention. FIG. 3 shows a method for manufacturing a display device according to an embodiment of the present invention, in which a transfer member layer of a transfer substrate is placed on top of a wafer component on a temporary substrate side, and the transfer substrate and the temporary substrate are separated In addition, it is a process cross-sectional explanatory view of a state where a wafer component is transferred to the transfer substrate side. FIG. 4 is an engineering cross-sectional explanatory view showing a state in which a transfer substrate on which a wafer component is transferred and a drive circuit substrate are opposed to each other in a method for manufacturing a display device according to an embodiment of the present invention. FIG. 5 is an engineering cross-sectional explanatory view showing a state in which a wafer component transferred onto a transfer substrate and a driving circuit substrate are brought into contact with each other through an anisotropic conductive film in a method for manufacturing a display device according to an embodiment of the present invention; . FIG. 6 is an engineering cross-sectional explanatory view showing a state in which a transfer substrate and a drive circuit substrate are overlapped and thermocompression-bonded in a method for manufacturing a display device according to an embodiment of the present invention. FIG. 7 shows that in the method for manufacturing a display device according to the embodiment of the present invention, after the transfer substrate and the drive circuit substrate are overlapped and thermocompression-bonded, the transfer substrate and the drive circuit substrate are separated from each other to turn the substrate. An explanatory drawing of a process cross section of a state where the printed member layer is peeled off from the wafer component and the wafer component is transferred to the drive circuit board side. FIG. 8 is an engineering cross-sectional explanatory view showing a state in which the temperature of the transfer substrate peeled from the wafer component is reduced and the thermally expandable particles are contracted in the method for manufacturing a display device according to the embodiment of the present invention. 9 is a cross-sectional explanatory view showing a change in the state of the thermally expandable particles included in the transfer member in the method for manufacturing a display device according to the embodiment of the present invention. 10 is a cross-sectional explanatory view showing a change in the state of a modified example of the thermally expandable particles included in the transfer member in the method for manufacturing a display device according to the embodiment of the present invention. FIG. 11 shows a state in which a driving circuit substrate in which a protective layer is laminated on an anisotropic conductive film and a transfer substrate on which a wafer component is transferred in a method for manufacturing a display device according to another embodiment of the present invention; Illustration of the engineering section. FIG. 12 is an engineering cross-sectional explanatory view showing a state in which a transfer substrate and a drive circuit substrate are overlapped and thermocompression-bonded in a method for manufacturing a display device according to another embodiment of the present invention.

Claims (9)

A manufacturing method of a display device, comprising: (i) a process of disposing a wafer component constituting a pixel on a temporary substrate; (ii) a transfer member provided along a substrate surface so that thermally expandable particles are dispersed in a thermoplastic adhesive. A process in which the transfer substrate of the transfer member layer is in close proximity to the temporary substrate, and the transfer member layer is attached to the wafer component; the transfer substrate is separated from the temporary substrate, and the wafer component is separated from the wafer The process of temporarily peeling the substrate side and transferring it to the transfer substrate side; driving the circuit board with a thermoplastic anisotropic conductive film disposed on the surface thereof and approaching the transfer substrate to make the anisotropy A process of contacting the conductive film with the wafer component; and thermally expanding the thermally expandable particles by thermally pressing the transfer substrate and the drive circuit substrate, and then separating the transfer substrate and the drive circuit substrate, so that the transfer substrate The transfer member layer is peeled from the wafer component to transfer the wafer component. Engineering the drive side of the circuit board. For example, the method of manufacturing a display device according to the first patent application range, wherein the thermally expandable particles are capsule-shaped spheres formed of a thermoplastic resin with a shell, and a low-boiling point material is sealed inside. For example, the method for manufacturing a display device according to the first patent application range, wherein the thermally expandable particles are capsule-shaped spheres formed of a thermoplastic resin with a casing, and a gas is sealed inside. For example, the method for manufacturing a display device according to any one of claims 1 to 3, wherein the aforementioned chip component is a micro LED chip. The method for manufacturing a display device according to any one of claims 1 to 4, wherein a protective resin layer made of a thermoplastic resin is laminated on the anisotropic conductive film. A method for transferring a wafer part includes: (1) a process of disposing a wafer part on a temporary substrate; (2) a transfer member provided with a transfer member provided along a substrate surface to disperse heat-expandable particles in a thermoplastic adhesive. The process of transferring the transfer substrate of the printing member layer to the temporary substrate, and then adhering the transfer member layer to the wafer component; 离 separating the transfer substrate from the temporary substrate, and moving the wafer component from the temporary substrate Side peeling and transferring to the transfer substrate side; driving the circuit substrate with a thermoplastic anisotropic conductive film disposed on the surface and close to the transfer substrate to make the anisotropic conductive film A process of contacting the wafer component; and thermally expanding the thermally expandable particles by thermally pressing the transfer substrate and the drive circuit substrate, and then separating the transfer substrate and the drive circuit substrate to transfer the transfer The component layer is peeled off from the wafer component and the wafer component is transferred to the driving circuit Engineering board side. For example, the method for transferring a wafer part according to item 6 of the application, wherein the thermally expandable particles are capsule-shaped spheres formed of a thermoplastic resin with a shell, and a low-boiling point material is sealed inside. For example, the method for transferring a wafer part according to item 6 of the patent application, wherein the thermally expandable particles are capsule-shaped spheres formed of a thermoplastic resin with a shell, and a gas is sealed inside. A transfer member, which is a transfer member that is used for transfer of a wafer component after peeling the wafer component from the wafer component, dispersing heat-expandable particles in a thermoplastic adhesive, and the heat-expandable particles It is a capsule-shaped sphere with a shell formed of a thermoplastic resin, and a gas or a low boiling point material is sealed inside.