TW202009984A - Flexible substrate and circuit structure and method of manufacturing the same - Google Patents

Abstract

A method of manufacturing a flexible substrate and circuit structure includes following steps. A debond layer is formed on a carrier. At least one chip is disposed on the debond layer. A polymer material is formed to cover at least a portion of sidewall of the at least chip. The polymer material is cured into a polymer substrate. The polymer substrate is separated from the debond layer, wherein the at least one chip is embedded in the polymer substrate. A first circuit structure is formed on a first surface of the polymer substrate, and the first circuit structure is electrically connected to a first pad of the at least one chip.

Description

Flexible substrate and circuit structure and manufacturing method thereof

The invention relates to a flexible substrate, a circuit structure and a manufacturing method thereof.

With the advancement of semiconductor technology, the brightness and efficiency of light emitting diodes (LEDs) have been greatly improved. Therefore, light-emitting diode displays have gradually replaced traditional displays and become a new generation of lighting elements, which are widely used in, for example, home lighting devices, automotive lighting devices, handheld lighting devices, LCD panel backlights, traffic signal indicators, Indication or advertising signs and other lighting applications.

However, in general light-emitting diode chip printing, it is easy to cause wafer shift (shift) and wafer rotation (rotate) problems due to the unevenness of the circuit board, or it is easy during the transposition process of the general light-emitting diode display A wafer shift problem has occurred. How to solve the above-mentioned wafer displacement, rotation or offset problems will become an important topic in the future.

The invention provides a flexible substrate, a circuit structure and a manufacturing method thereof, which can manufacture a flexible or stretchable circuit substrate structure, and solve the wafer displacement and wafer rotation caused by the unevenness of the circuit board when the wafer is printed Or improve the wafer shift problem during the transposition process of general light-emitting diode displays.

The invention provides a method for manufacturing a flexible substrate and a circuit structure, the steps are as follows. A release layer is formed on the carrier. At least one wafer is disposed on the release layer. The polymer material is injected to cover at least a part of the side wall of the wafer. The polymer material is cured into a polymer substrate. The polymer substrate and the release layer are separated, and at least one chip is embedded in the polymer substrate. A first circuit structure is formed on the first surface of the polymer substrate, and the first circuit structure is electrically connected to the first pad of at least one chip.

The invention provides a flexible substrate and a circuit structure, including a polymer substrate, a plurality of light-emitting element chips and a first circuit structure. The polymer substrate has opposite first and second surfaces. A plurality of light-emitting element chips are embedded in the polymer substrate. The first circuit structure is disposed on the first surface of the polymer substrate. The first pad or the second pad in each light-emitting element chip is coplanar with the first surface of the polymer substrate.

In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.

The invention is explained more fully with reference to the drawings of this embodiment. However, the present invention can also be embodied in various forms, and should not be limited to the embodiments described herein. The thickness of layers and regions in the drawings will be exaggerated for clarity. The same or similar reference numerals indicate the same or similar elements, and the following paragraphs will not repeat them one by one.

1A to 1E are schematic perspective views of a manufacturing process of a flexible substrate and a circuit structure according to the first embodiment of the present invention. This embodiment provides a method for manufacturing a flexible substrate and a circuit structure. The wafer 100 is embedded in a polymer substrate 108 in a wafer-first molding manner. The detailed steps are as follows.

1A, first, a release layer 104 is formed on the carrier 102. In an embodiment, the material of the carrier 102 may be glass, quartz, metal, ceramic, or other suitable materials. In some embodiments, the material of the release layer 104 may be a polymer, an organic material, an inorganic material, or a combination thereof. In other embodiments, the release layer 104 may include a solid state, a liquid state, or a gel state.

Referring to FIG. 1B, a plurality of chips 100 are disposed on the release layer 104 by a transposition method. In an embodiment, the transposition method includes an electrostatic method, a vacuum suction method, a robot arm pick and place method, a wafer to wafer bonding method, or a sticking method. However, the invention is not limited to this, as long as any transposition method capable of disposing the wafer 100 on the release layer 104 is within the scope of the invention. In one embodiment, the wafer 100 may be a micro-emitting diode whose length, width and height are all less than 1 millimeter (mm). Since the volume of the wafer 100 is small, it is easy to be displaced or rotated during transposition. Therefore, the release layer 104 can be used to temporarily fix or attach the wafer 100 to the carrier 102 to improve the phenomenon of displacement or rotation. In some embodiments, the material of the release layer 104 includes a material having temporary fixing properties. In addition, the number, function, and configuration of the wafer 100 can be adjusted according to actual needs. For example, a single wafer 100 in FIG. 1B may be a light-emitting diode emitting monochromatic light. On the other hand, a single chip 100 in FIG. 1B may include integrating a red light-emitting diode, a blue light-emitting diode, and a green light-emitting diode in a module. In some embodiments, the chip 100 may be, for example, a light-emitting device chip, an active device chip, a passive device chip, or a combination thereof. In alternative embodiments, each wafer 100 may be a wafer with the same function or a wafer with different functions.

1C and 1D, after the wafer 100 is disposed on the release layer 104, a polymer material 106 is injected to cover the wafer 100. In one embodiment, the polymer material 106 includes polydimethylsiloxane (PDMS), polyurethane (Polyurethane, PU), thermoplastic polyurethane (Thermoplastic Urethane, TPU), and polyimide (Polyimide, PI) Or a combination thereof.

1D, the polymer material 106 is cured into a polymer substrate 108. At this time, the first surface 108 a of the polymer substrate 108 faces and contacts the release layer 104. In one embodiment, the curing step uses, for example, a heating film formation process, for example, by heating the polymer material 106 to between 60° C. and 220° C. to cure or form the polymer material 106. However, the present invention is not limited to this. In other embodiments, the curing method or temperature is different according to the type of the polymer material 106.

1D and 1E, the polymer substrate 108 and the release layer 104 are separated. Specifically, the polymer substrate 108 and the release layer 104 (or the carrier 102) can be separated by mechanical debond, laser debond, or heating or cooling debond. ) Separate or separate. In this case, the polymer substrate 108 can be turned upside down so that the first surface 108a of the polymer substrate 108 faces upward. As shown in FIG. 1E, the chip 100 is embedded in the polymer substrate 108, and at least one of the chip 100 is connected. The pads (pads 208 and 210 shown in FIG. 2B) are exposed on the polymer substrate 108. To some extent, the at least one pad of each chip 100 can be regarded as a coplanar plane, which facilitates subsequent screen printing steps (screen printing) 110 to further improve the yield of the flexible substrate and the circuit structure.

Next, a screen printing step 110 is performed to form the first circuit structure 112 (as shown in FIG. 2F) on the surface of the polymer substrate 108. In one embodiment, the screen printing step 110 uses stretchable conductive silver paste and insulating paste spaced apart to print out multiple layers of conductive lines with different input signals, but the invention is not limited thereto. In this embodiment, the step of forming the first circuit structure 112 after embedding the wafer 100 on the polymer substrate 108 can fix the position of the wafer 100 and make the at least one pad of the wafer 100 coplanar, which facilitates the screen printing step 110. In detail, in this embodiment, the step of transposing the wafer 100 onto the release layer 104 and then injecting the polymer material 106 can reduce the height between the polymer substrate 108 and the wafer 100 embedded in the polymer substrate 108 It is poor, and the problem that the subsequent circuit structure and the wafer are electrically offset due to the uneven surface or placement of the wafer is solved. In other words, the yield of the flexible substrate and the circuit structure manufactured by the manufacturing method of this embodiment can be improved.

In addition, after separating the polymer substrate 108 and the release layer 104 and before performing the screen printing step 110, the release layer 104 remaining on the polymer substrate 108 can be selectively removed. In one embodiment, the release layer 104 remaining on the polymer substrate 108 can be removed by ion bombardment or cleaning with a solution (such as alcohol, acetone, or toluene) to make the polymer substrate 108 The release layer 104 reduces residue.

2A to 2F are schematic cross-sectional views of a manufacturing process of a flexible substrate and a circuit structure according to a second embodiment of the invention.

2A and 2B, the manufacturing process of the flexible substrate and circuit structure of the second embodiment is basically similar to the manufacturing process of the flexible substrate and circuit structure of the first embodiment, that is, FIG. 2A and FIG. 1A are the same and It has been explained in the above paragraphs, so I will not repeat them here. The manufacturing process of the flexible substrate and the circuit structure of the second embodiment is explained by taking the light-emitting element wafer 200 as an example. In this embodiment, the light emitting element wafer 200 may be a horizontal light emitting diode. As shown in the enlarged view of FIG. 2B, the light-emitting element wafer 200 includes a first semiconductor layer 202, a light-emitting layer 204, a second semiconductor layer 206, a first pad 208 and a second pad 210. The light emitting layer 204 is formed on the first semiconductor layer 202. The second semiconductor layer 206 is formed on the light emitting layer 204. The first pad 208 is formed on the first semiconductor layer 202. The second pad 210 is formed on the second semiconductor layer 206. In addition, an insulating material (not shown) is included to surround the outer edge of the light-emitting element chip 200 to protect the light-emitting element chip 200.

In detail, the method of manufacturing the light-emitting element wafer 200 (hereinafter simply referred to as wafer 200) is as follows. First, a first semiconductor layer 202, a light emitting layer 204, and a second semiconductor layer 206 are sequentially formed on an epitaxial substrate (not shown). In one embodiment, the conductivity type of the first semiconductor layer 202 is different from the conductivity type of the second semiconductor layer 206. For example, the first semiconductor layer 202 may be an N-type semiconductor material, and the second semiconductor layer 206 may be a P-type semiconductor material; and vice versa. In some embodiments, the material of the light emitting layer 204 may be, for example, a multiple quantum well light emitting material. Then, part of the second semiconductor layer 206 and part of the light emitting layer 204 are removed to expose part of the surface of the first semiconductor layer 202. Next, the first pad 208 is formed on a part of the surface of the first semiconductor layer 202, and the second pad 210 is formed on the surface of the second semiconductor layer 206. In an embodiment, the first pad 208 and the second pad 210 may be the same material, for example, a conductive material. In this embodiment, the second pad 210 is higher than the first pad 208, and there is a height difference H1 between the top surface 208t of the first pad 208 and the top surface 210t of the second pad 210. In one embodiment, the height difference H1 is about 1 micrometer (μm), but not limited to this.

As shown in FIG. 2B, a plurality of wafers 200 are disposed on the release layer 104 by a transposition method. In detail, the wafer 200 is turned upside down so that the top surface 208t of the first pad 208 and the top surface 210t of the second pad 210 face the release layer 104. In one embodiment, the top surface 210t of the second pad 210 abuts or contacts the release layer 104, and the top surface 208t of the first pad 208 is separated from the release layer 104 by a distance. The above steps can be regarded as placing the wafer 200 on the release layer 104 in a pad-down manner. Although FIG. 2B only shows three wafers 200, the invention is not limited thereto. In other embodiments, the number and configuration of the wafers 200 can be adjusted according to requirements. In alternative embodiments, the wafers 200 may be arranged in an array.

2C, after the wafer 200 is disposed on the release layer 104, a polymer material 106 is injected to cover the surface of the wafer 200. Specifically, since the polymer material 106 is a flowable material, the polymer material 106 not only covers the sidewall 200s and the upper surface 200t of the wafer 200, but also fills in the top surface 208t of the first pad 208 and the release layer 104 The space between 105.

2C and 2D, the polymer material 106 is cured into a polymer substrate 108, and the polymer substrate 108 and the release layer 104 are separated. In this case, as shown in FIG. 2D, the polymer substrate 108 is turned upside down so that the top surface 208t of the first pad 208 and the top surface 210t of the second pad 210 face upward. The chip 200 is embedded in the polymer substrate 108, and the top surface 210t of the second pad 210 is exposed on the first surface 108a of the polymer substrate 108. In this embodiment, the top surface 210t of the second pad 210 of the wafer 200 is coplanar with the first surface 108a of the polymer substrate 108. In an embodiment, the thickness H2 of the polymer substrate 108 may be 1 micrometer to 2000 micrometers. Compared to the thickness H2 of the polymer substrate 108, a height difference H1 between the top surface 208t of the first pad 208 and the top surface 210t of the second pad 210 of about 1 micrometer can be regarded as coplanar. In an alternative embodiment, both the top surface 208t of the first pad 208 and the top surface 210t of the second pad 210 are coplanar with the first surface 108a of the polymer substrate 108.

2D and 2E, a part of the polymer substrate 108 is removed to form the opening 109. The opening 109 extends downward from the first surface 108 a of the polymer substrate 108 and exposes the top surface 208 t of the first pad 208 of the wafer 200. In one embodiment, the method of forming the opening 109 may include (but not limited to) a lithography process and an etching process.

Please refer to FIGS. 2E and 2F. Next, a screen printing step is performed to form the first circuit structure 112 on the first surface 108a of the polymer substrate 108. Specifically, the first circuit structure 112 includes conductive layers 114, 118, 120 and an insulating layer 116. The conductive layer 114 is formed on the top surface 210t of the second pad 210 to be electrically connected to the second pad 210. The conductive layer 118 is formed above the conductive layer 114. The insulating layer 116 is formed between the conductive layers 114 and 118 to electrically insulate the conductive layers 114 and 118. The conductive layer 120 is filled into the opening 109 and extends to cover a portion of the first surface 108 a of the polymer substrate 108, so as to be electrically connected to the first pad 208. In one embodiment, the conductive layer 114 and the conductive layer 120 may be formed in sequence, and the conductive layer 118 and the conductive layer 120 may be formed simultaneously. After the first circuit structure 112 is formed, the flexible substrate and the circuit structure of the embedded chip 200 in this embodiment have been completed. In some embodiments, the flexible substrate and circuit structure of the embedded chip 200 can be regarded as a light-emitting diode display, such as a traffic signal indicator, a transparent flexible panel, an indicator, or an advertising billboard.

3A to 3E are schematic cross-sectional views of a manufacturing process of a flexible substrate and a circuit structure according to a third embodiment of the invention.

3A and 3B, the manufacturing flow of the flexible substrate and circuit structure of the third embodiment is basically similar to the manufacturing flow of the flexible substrate and circuit structure of the first embodiment, that is, FIG. 3A is the same as FIG. 1A and It has been explained in the above paragraphs, so I will not repeat them here. The manufacturing process of the flexible substrate and the circuit structure of the third embodiment will be described by taking the light-emitting element wafer 200 as an example. In this embodiment, the light emitting element wafer 200 may be a horizontal light emitting diode.

In detail, as shown in FIG. 3B, the step of disposing the wafer 200 on the release layer 104 by the transposition method includes: making the top surface 208t of the first pad 208 and the top surface 210t of the second pad 210 deviate From the layer 104. In one embodiment, the back surface 202b of the first semiconductor layer 202 of the wafer 200 abuts or contacts the release layer 104. The above steps can be regarded as placing the wafer 200 on the release layer 104 in a pad-up manner.

Referring to FIG. 3C, after the wafer 200 is disposed on the release layer 104, a polymer material 106 is injected to cover part of the sidewall 200s of the wafer 200. In one embodiment, the thickness T1 of the polymer material 106 is less than or equal to the thickness T2 of the wafer 200. In an alternative embodiment, the polymer material 106 covers at least one third of the height of the side wall 200s of the wafer 200. That is, the thickness T1 of the polymer material 106 may be greater than or equal to one-third of the thickness T2 of the wafer 200. In this case, as shown in FIG. 3C, the top surface 208 t of the first pad 208 and the top surface 210 t of the second pad 210 are exposed to the polymer material 106.

3C and 3D, the polymer material 106 is cured into a polymer substrate 108, and the polymer substrate 108 and the release layer 104 are separated. In this case, as shown in FIG. 3D, the chip 200 is embedded in the polymer substrate 108, and the top surface 208t of the first pad 208 and the top surface 210t of the second pad 210 are exposed on the first surface 108a of the polymer substrate 108 . In one embodiment, the back surface 202b of the first semiconductor layer 202 of the wafer 200 and the second surface 108b of the polymer substrate 108 are coplanar. In an alternative embodiment, the top surface 208t of the first pad 208 of the wafer 200 is coplanar with the first surface 108a of the polymer substrate 108.

Referring to FIGS. 3D and 3E, a screen printing step is performed to form the first circuit structure 212 on the first surface 108a of the polymer substrate 108. For example, the first circuit structure 212 includes conductive layers 214, 218, 220 and an insulating layer 216. The conductive layer 214 is formed on the top surface 208t of the first pad 208 to be electrically connected to the first pad 208. The conductive layer 218 is formed above the conductive layer 214. The insulating layer 216 is formed between the conductive layers 214 and 218 to electrically insulate the conductive layers 214 and 218. The conductive layer 220 is formed on the top surface 210t of the second pad 210 to be electrically connected to the second pad 210. In one embodiment, the conductive layer 214 and the conductive layer 220 may be formed in sequence, and the conductive layer 218 and the conductive layer 220 may be formed simultaneously.

4 is a schematic cross-sectional view of a flexible substrate and a circuit structure according to a fourth embodiment of the invention.

4, the flexible substrate and circuit structure of the fourth embodiment are basically similar to the flexible substrate and circuit structure of the third embodiment. The difference between the above two is that the flexible substrate and the chip 300 embedded in the circuit structure of the fourth embodiment are vertical light emitting diodes. Specifically, the light emitting element wafer 300 includes a first semiconductor layer 202, a light emitting layer 204, a second semiconductor layer 206, a first pad 208, and a second pad 210. The light emitting layer 204 is formed between the first semiconductor layer 202 and the second semiconductor layer 206. The first pad 208 is formed on the first semiconductor layer 202 on a side away from the light emitting layer 204. The second pad 210 is formed on the second semiconductor layer 206, away from the other side of the light emitting layer 204. In this embodiment, the top surface 208t of the first pad 208 faces upward, and the top surface 210t of the second pad 210 faces downward.

The polymer substrate 108 surrounds the side wall 300s of the light-emitting device chip 300, the top surface 208t of the first pad 208 is exposed to the first surface 108a of the polymer substrate 108, and the top surface 210t of the second pad 210 is exposed to the polymer substrate 108的second surface 108b. In one embodiment, the first surface 108a and the second surface 108b of the polymer substrate 108 are opposite to each other. Although the top surface 208t of the first pad 208 in FIG. 4 is higher than the first surface 108a of the polymer substrate 108, the invention is not limited thereto. In other embodiments, the top surface 208t of the first pad 208 and the first surface 108a of the polymer substrate 108 may be substantially coplanar. Similarly, the top surface 210t of the second pad 210 and the second surface 108b of the polymer substrate 108 may also be substantially coplanar.

The first circuit structure 312 a is formed on the first surface 108 a of the polymer substrate 108 and is electrically connected to the first pad 208. The first circuit structure 312b is formed on the second surface 108b of the polymer substrate 108 and electrically connected to the second pad 210.

Although the above embodiments only show the horizontal light-emitting diode chip and the vertical light-emitting diode chip, the invention is not limited thereto. In other embodiments, the chip embedded in the flexible substrate and the circuit structure may also be a flip chip light-emitting diode chip, an active device chip, a passive device chip, or a combination thereof.

In summary, the present invention embeds at least one chip into a polymer substrate by chip first molding. Next, a first circuit structure is formed on the first surface of the polymer substrate by a screen printing method, so that the first circuit structure is electrically connected to the first pads of at least one chip. Therefore, the manufacturing method of the present invention can manufacture a flexible or stretchable circuit board structure, and solve the problem of wafer displacement or wafer rotation caused by uneven surface or placement of the wafer, resulting in subsequent drive circuits and The problem of chip electrical connection deviation. In addition, compared with the traditional printed wiring board manufacturing method, the manufacturing method of the flexible substrate and circuit structure of the present invention has the advantages of simple manufacturing process, rapid production, and low manufacturing cost, so that the product has commercial competitiveness.

Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

100, 200, 300 ‧ ‧ ‧ chip 102 ‧ ‧ ‧ carrier 104 ‧ ‧ ‧ release layer 106 ‧ ‧ ‧ polymer material 108 ‧ ‧ ‧ polymer substrate 108a ‧ ‧ ‧ first surface 108b ‧ ‧ second surface 109 ‧‧‧ opening 110‧‧‧ screen printing steps 112, 212, 312a ‧‧‧ first circuit structure 312b ‧‧‧ second circuit structure 114, 118, 120, 214, 218, 220 ‧‧‧ conductive layer 116, 216 ‧‧‧Insulation layer 200s, 300s‧‧‧‧Side sidewall 202‧‧‧First semiconductor layer 204‧‧‧Light emitting layer 206‧‧‧Second semiconductor layer 208‧‧‧First pad 208t‧‧‧First Top surface of the pad 210‧‧‧ Second pad 210t‧‧‧Top surface of the second pad H1‧‧‧Height difference H2‧‧‧Thickness of the polymer substrate T1‧‧‧Thickness of the polymer material T2‧ ‧‧Thickness of the chip

1A to 1E are schematic perspective views of a manufacturing process of a flexible substrate and a circuit structure according to the first embodiment of the present invention. 2A to 2F are schematic cross-sectional views of a manufacturing process of a flexible substrate and a circuit structure according to a second embodiment of the invention. 3A to 3E are schematic cross-sectional views of a manufacturing process of a flexible substrate and a circuit structure according to a third embodiment of the invention. 4 is a schematic cross-sectional view of a flexible substrate and a circuit structure according to a fourth embodiment of the invention.

200‧‧‧chip

108‧‧‧polymer substrate

108a‧‧‧First surface

112‧‧‧ First line structure

114, 118, 120‧‧‧ conductive layer

116‧‧‧Insulation

208‧‧‧First pad

210‧‧‧Second pad

Claims (20)

A method for manufacturing a flexible substrate and a circuit structure, comprising: forming a release layer on a carrier; disposing at least one wafer on the release layer; injecting a polymer material to cover at least a part of the side wall of the at least one wafer; Curing the polymer material into a polymer substrate; separating the polymer substrate and the release layer, wherein the at least one chip is embedded in the polymer substrate; and on the first surface of the polymer substrate A first circuit structure is formed thereon, and the first circuit structure is electrically connected to the first pad of the at least one chip. The method for manufacturing a flexible substrate and a circuit structure as described in item 1 of the patent scope, wherein the at least one chip includes a light-emitting element chip, an active element chip, a passive element chip, or a combination thereof. The method for manufacturing a flexible substrate and a circuit structure as described in item 1 of the patent scope, wherein the at least one wafer includes a light-emitting element wafer, and the light-emitting element wafer includes a light-emitting diode, which includes: a first semiconductor layer; A layer formed on the first semiconductor layer; a second semiconductor layer formed on the light emitting layer; the first pad formed on the first semiconductor layer; and a second pad formed on the On the second semiconductor layer. The method for manufacturing a flexible substrate and a circuit structure according to item 3 of the patent application scope, wherein the step of arranging the at least one wafer on the release layer includes: connecting the first contact of the at least one wafer The pad and the second pad face the release layer, and at least one of the first pad and the second pad abuts the release layer. The method for manufacturing a flexible substrate and a circuit structure according to item 3 of the patent application scope, wherein before forming the first circuit structure on the surface of the polymer substrate, further comprising removing a part of the polymer substrate, To expose the first pad and the second pad of the at least one chip. The method for manufacturing a flexible substrate and a circuit structure according to item 3 of the patent application scope, wherein the step of arranging the at least one wafer on the release layer includes: connecting the first contact of the at least one wafer The pad and the second pad are away from the release layer. The method for manufacturing a flexible substrate and a circuit structure as described in item 1 of the patent application range, wherein in the step of injecting the polymer material, the thickness of the polymer material is less than or equal to the thickness of the at least one wafer. The method for manufacturing a flexible substrate and a circuit structure according to item 1 of the patent application range, wherein in the step of injecting the polymer material, the polymer material covers at least three-thirds of the height of the side wall of the at least one wafer one. The method for manufacturing a flexible substrate and a circuit structure as described in item 1 of the patent application range, wherein the polymer material includes polydimethylsiloxane, polyurethane, thermoplastic polyurethane, polyimide, or a combination thereof. The method for manufacturing a flexible substrate and a circuit structure as described in item 1 of the patent application range, wherein the step of curing the polymer material into the polymer substrate includes heating to 60°C to 220°C. The method for manufacturing a flexible substrate and a circuit structure as described in item 1 of the patent scope, wherein the method of disposing the at least one wafer on the release layer includes a transposition method, and the transposition method includes an electrostatic method, Vacuum suction method, robot arm pick-and-place method, wafer-to-wafer bonding method or sticky picking method. The method for manufacturing a flexible substrate and a circuit structure as described in item 1 of the patent application range, wherein the material of the release layer includes a material with temporary fixing properties, which is used to temporarily fix the at least one wafer. The method for manufacturing a flexible substrate and a circuit structure as described in item 1 of the patent scope further includes forming a second circuit structure on the second surface of the polymer substrate, the second circuit structure and the at least one chip The second pad is electrically connected, wherein the second surface of the polymer substrate is opposite to the first surface of the polymer substrate. A flexible substrate and a circuit structure, including: a polymer substrate having opposing first and second surfaces; a plurality of light-emitting element chips embedded in the polymer substrate; and a first circuit structure disposed in the polymer On the first surface of the substrate, the first pad or the second pad in each light-emitting element chip is coplanar with the first surface of the polymer substrate. The flexible substrate and circuit structure as described in item 14 of the patent application range, wherein the light-emitting element wafer includes a plurality of light-emitting diodes, and each of the light-emitting diodes includes: a first semiconductor layer; a second semiconductor layer; light emission Layer located between the first semiconductor layer and the second semiconductor layer; the first pad connected to the first semiconductor layer; and the second pad connected to the second semiconductor The layers are connected, wherein the second pad is higher than the first pad, and the top surface of the second pad is coplanar with the first surface of the polymer substrate. The flexible substrate and circuit structure as described in item 14 of the patent application range, wherein the light-emitting element wafer includes a plurality of light-emitting diodes, and each of the light-emitting diodes includes: a first semiconductor layer; a second semiconductor layer; light emission Layer located between the first semiconductor layer and the second semiconductor layer; the first pad connected to the first semiconductor layer; and the second pad connected to the second semiconductor The layers are connected, wherein the second pad is higher than the first pad, and the top surface of the first pad is coplanar with the first surface of the polymer substrate. The flexible substrate and the circuit structure as described in item 16 of the patent application range, wherein a back surface of the first semiconductor layer and the first pad of each of the light emitting diodes is opposite to the position of the polymer substrate The second surface is coplanar. The flexible substrate and circuit structure according to item 14 of the patent application scope, wherein the light-emitting element chip includes a plurality of light-emitting diodes, and each of the light-emitting diodes includes: a light-emitting layer located between the first semiconductor layer and the second Between the semiconductor layers; the first pad on the first semiconductor layer and exposed on the first surface of the polymer substrate; and the second pad on the second semiconductor layer Above and exposed on the second surface of the polymer substrate. The flexible substrate and circuit structure according to item 18 of the patent application range, wherein the top surface of the first pad is coplanar with the first surface of the polymer substrate, and the top of the second pad The surface is coplanar with the second surface of the polymer substrate. The flexible substrate and circuit structure as described in item 18 of the patent application scope further include a second circuit structure disposed on the second surface of the polymer substrate, and the second circuit structure is connected to the second The pad is electrically connected.

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