CN112768370B - Transfer method and transfer device for micro-component - Google Patents
Transfer method and transfer device for micro-component Download PDFInfo
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Abstract
Description
技术领域technical field
本申请涉及半导体技术领域,特别是涉及微元件的转移方法及转移装置。The present application relates to the field of semiconductor technology, in particular to a transfer method and a transfer device for micro components.
背景技术Background technique
微元件作为一种微型电气元件在半导体技术领域有着较广泛的应用,如Micro-LED芯片具有高亮度、高响应速度、低功耗、长寿命等优点,是新一代显示技术的研究热点。微元件在使用过程中通常会涉及到转移过程,转移时又会涉及供给基板的剥离,在剥离供给基板时,受剥离外力影响,容易对微元件造成断裂、缺角等问题,从而影响转移良率。As a kind of miniature electrical components, micro components are widely used in the field of semiconductor technology. For example, Micro-LED chips have the advantages of high brightness, high response speed, low power consumption, and long life. They are research hotspots in the new generation of display technology. The use of micro-components usually involves the transfer process, and the transfer also involves the peeling of the supply substrate. When the supply substrate is peeled off, affected by the external force of the peeling, it is easy to cause problems such as breakage and chipped corners on the micro-components, thus affecting the quality of the transfer. Rate.
发明内容Contents of the invention
本申请主要解决的技术问题是提供一种微元件的转移方法及转移装置,能够减少微元件在转移过程中的损伤。The technical problem mainly solved by the present application is to provide a transfer method and device for micro components, which can reduce the damage of the micro components during the transfer process.
为解决上述技术问题,本申请采用的一个技术方案是:提供一种微元件的转移方法,该方法包括将具有微元件的供给基板与承载基板对位,且供给基板具有微元件的一侧朝向承载基板的承载面,微元件背离供给基板的表面具有电极;减少供给基板与承载基板之间的距离至微元件的电极接触承载基板的承载面,同时微元件背离供给基板的表面除电极之外的区域和承载基板的承载面之间也相互直接或间接接触;在微元件粘附于承载基板的承载面后去除供给基板;利用转移头对承载基板上的微元件进行转移。In order to solve the above technical problems, a technical solution adopted by the present application is to provide a method for transferring micro components, which includes aligning the supply substrate with micro components with the carrier substrate, and the side of the supply substrate with micro components faces The carrying surface of the carrying substrate, the surface of the micro-component facing away from the supply substrate has electrodes; the distance between the supply substrate and the carrying substrate is reduced until the electrodes of the micro-component contact the carrying surface of the carrying substrate, while the surface of the micro-component facing away from the supply substrate except for electrodes There is also direct or indirect contact between the region of the carrier substrate and the carrier surface of the carrier substrate; the supply substrate is removed after the micro-components are adhered to the carrier surface of the carrier substrate; the transfer head is used to transfer the micro-components on the carrier substrate.
其中,减少供给基板与承载基板之间的距离至微元件的电极接触承载基板的承载面之前包括:在承载基板的承载面对应微元件的电极的位置形成形状尺寸与微元件的电极匹配的凹槽。Wherein, reducing the distance between the supply substrate and the carrying substrate until the electrodes of the micro-elements contact the carrying surface of the carrying substrate includes: forming a shape and size matching the electrodes of the micro-elements at the positions corresponding to the electrodes of the micro-elements on the carrying surface of the carrying substrate. groove.
其中,微元件背离供给基板的表面除电极之外区域和承载基板的承载面之间也相互直接接触包括:微元件的电极接触凹槽底部,同时微元件背离供给基板的表面除电极之外的区域和凹槽外的承载面之间也相互直接接触。Wherein, the direct contact between the area of the surface of the micro-element away from the supply substrate except for the electrodes and the bearing surface of the carrier substrate also includes: the electrode of the micro-element contacts the bottom of the groove, while the surface of the micro-element away from the supply substrate except for the electrodes There is also direct contact between the area and the bearing surface outside the groove.
其中,承载基板包括形成承载面的粘合剂层,凹槽设置在粘合剂层上。Wherein, the bearing substrate includes an adhesive layer forming the bearing surface, and the grooves are arranged on the adhesive layer.
其中,减少供给基板与承载基板之间的距离至微元件的电极接触承载基板的承载面之前包括:在微元件具有电极的一侧形成平坦化层,平坦化层的表面与电极的表面齐平。Wherein, reducing the distance between the supply substrate and the carrying substrate until the electrode of the micro-element contacts the carrying surface of the carrying substrate includes: forming a planarization layer on the side where the micro-element has the electrode, and the surface of the planarization layer is flush with the surface of the electrode .
其中,微元件背离供给基板的表面除电极之外的区域和承载基板的承载面之间也相互间接接触包括:微元件的电极和平坦化层均与承载基板的承载面之间相互直接接触。Wherein the indirect contact between the surface of the micro-element away from the supply substrate except for the electrodes and the carrying surface of the carrying substrate includes: both the electrodes and the planarization layer of the micro-element are in direct contact with the carrying surface of the carrying substrate.
其中,减少供给基板与承载基板之间的距离至微元件的电极接触承载基板的承载面,同时微元件背离供给基板的表面除电极之外的区域和承载基板的承载面之间也相互间接接触包括:提供一网格板,网格板具有形状尺寸与微元件的电极匹配的通孔,网格板的厚度等于电极的高度;将网格板置于供给基板和承载基板之间;贴合供给基板、网格板和承载基板,以使微元件的电极接触承载基板的承载面,同时微元件背离供给基板的表面除电极之外的区域通过网格板和承载基板的承载面之间相互间接接触。Wherein, the distance between the supply substrate and the carrying substrate is reduced until the electrodes of the micro-components contact the carrying surface of the carrying substrate, and at the same time, the area of the surface of the micro-component away from the supply substrate except the electrodes and the carrying surface of the carrying substrate are also indirect contact with each other Including: providing a grid plate, the grid plate has a through hole whose shape and size match the electrodes of the micro-element, and the thickness of the grid plate is equal to the height of the electrode; placing the grid plate between the supply substrate and the carrying substrate; bonding The supply substrate, the grid plate and the carrying substrate are such that the electrodes of the micro-components contact the carrying surface of the carrying substrate, and the area of the surface of the micro-element away from the supply substrate except the electrodes is passed between the mesh plate and the carrying surface of the carrying substrate. indirect contact.
其中,利用转移头对承载基板上的微元件进行转移之前包括:将转移头设置在转移基板上,且多个转移头相互分立设置。Wherein, before using the transfer head to transfer the micro components on the carrier substrate, it includes: disposing the transfer head on the transfer substrate, and a plurality of transfer heads are arranged separately from each other.
进一步地,将转移头设置在转移基板上,且多个转移头相互分立设置包括:在转移基板上形成一层转移头材料层;图形化转移头材料层,形成多个相互分立的转移头。Further, disposing the transfer head on the transfer substrate, and arranging the plurality of transfer heads separately from each other includes: forming a transfer head material layer on the transfer substrate; patterning the transfer head material layer to form a plurality of mutually separated transfer heads.
为解决上述技术问题,本申请采用的另一个技术方案是:提供一种微元件的转移装置,转移装置包括承载基板和转移基板,承载基板包括承载面,用于承载微元件;承载基板的承载面对应微元件的电极的位置设置有形状和尺寸匹配微元件的电极的凹槽;转移基板包括至少一个转移头,用于吸附并转移微元件。In order to solve the above technical problems, another technical solution adopted by the present application is to provide a transfer device for micro components, the transfer device includes a carrier substrate and a transfer substrate, the carrier substrate includes a carrier surface for carrying micro components; the carrier of the carrier substrate The position corresponding to the electrode of the micro-element is provided with a groove whose shape and size match the electrode of the micro-element; the transfer substrate includes at least one transfer head for absorbing and transferring the micro-element.
其中,转移基板上设置有多个转移头,多个转移头相互分立设置。Wherein, a plurality of transfer heads are arranged on the transfer substrate, and the plurality of transfer heads are arranged separately from each other.
其中,承载基板包括形成于所述承载面的粘合剂层,凹槽设置在粘合剂层上。Wherein, the carrying substrate includes an adhesive layer formed on the carrying surface, and the grooves are arranged on the adhesive layer.
本申请的有益效果是:区别于现有技术的情况,本申请通过控制微元件的电极接触承载基板的承载面,同时微元件背离供给基板的表面除电极之外的区域和承载基板的承载面之间也相互直接或间接接触,能够增加微元件与承载基板之间的结合面积,提升微元件在承载基板上的稳定性,还有利于排除微元件下方的空气,从而降低微元件受损的风险。The beneficial effects of the present application are: different from the situation of the prior art, the present application controls the electrodes of the micro-elements to contact the carrying surface of the carrying substrate, and at the same time, the micro-elements are away from the area of the surface of the supply substrate except for the electrodes and the carrying surface of the carrying substrate They are also in direct or indirect contact with each other, which can increase the bonding area between the micro-components and the carrier substrate, improve the stability of the micro-components on the carrier substrate, and help to eliminate the air under the micro-components, thereby reducing the damage of the micro-components risk.
附图说明Description of drawings
图1是本申请一实施方式中微元件转移方法的流程示意图;FIG. 1 is a schematic flow diagram of a micro-element transfer method in an embodiment of the present application;
图2是本申请一实施方式中分立式转移头的结构示意图;Fig. 2 is a schematic structural view of a discrete transfer head in an embodiment of the present application;
图3是本申请一实施方式中分立式转移头制备方法的流程示意图;3 is a schematic flow diagram of a method for preparing a discrete transfer head in an embodiment of the present application;
图4是本申请一实施方式中承载基板的结构示意图;4 is a schematic structural view of a carrier substrate in an embodiment of the present application;
图5是本申请另一实施方式中微元件的转移方法提供微元件的示意图;Fig. 5 is a schematic diagram of micro-components provided by the transfer method of micro-components in another embodiment of the present application;
图6是本申请另一实施方式中微元件的转移方法提供承载基板的示意图;6 is a schematic diagram of a carrier substrate provided by a transfer method of micro components in another embodiment of the present application;
图7是本申请另一实施方式中微元件的转移方法贴合供给基板和承载基板的示意图;Fig. 7 is a schematic diagram of a micro-component transfer method for laminating a supply substrate and a carrier substrate in another embodiment of the present application;
图8是本申请另一实施方式中微元件的转移方法剥离供给基板的示意图;Fig. 8 is a schematic diagram of peeling off the supply substrate in the transfer method of micro components in another embodiment of the present application;
图9是本申请另一实施方式中微元件的转移方法提供转移头的示意图;FIG. 9 is a schematic diagram of a transfer head provided by a transfer method of micro components in another embodiment of the present application;
图10是本申请另一实施方式中微元件的转移方法转移微元件的示意图;Fig. 10 is a schematic diagram of transferring a micro-element by a micro-element transfer method in another embodiment of the present application;
图11是本申请一实施方式中供给基板的结构示意图;FIG. 11 is a schematic structural diagram of a supply substrate in an embodiment of the present application;
图12是本申请又一实施方式中微元件的转移方法贴合供给基板与承载基板的示意图;Fig. 12 is a schematic diagram of a transfer method of a micro-component in another embodiment of the present application to attach a supply substrate and a carrier substrate;
图13是本申请一实施方式中网格板的剖面结构示意图;Fig. 13 is a schematic cross-sectional structure diagram of a grid plate in an embodiment of the present application;
图14是本申请一实施方式中网格板的俯视结构示意图;Fig. 14 is a schematic top view of the grid plate in an embodiment of the present application;
图15是本申请再一实施方式中微元件的转移方法贴合供给基板、网格板与承载基板的示意图。FIG. 15 is a schematic diagram of a micro-element transfer method for attaching a supply substrate, a grid plate, and a carrier substrate in yet another embodiment of the present application.
具体实施方式Detailed ways
为使本申请的目的、技术方案及效果更加清楚、明确,以下参照附图并举实施例对本申请进一步详细说明。In order to make the purpose, technical solution and effect of the present application more clear and definite, the present application will be further described in detail below with reference to the accompanying drawings and examples.
本申请提供一种微元件的转移方法,可用于转移微型发光二极管器件(Micro-LED),但不限于该器件,还可用于其他微元件的转移。如微元件还可以是光电二极管阵列检测器(Photo-diode Array,PDA)的二极管阵列,MOS(Metal Oxide Semiconductor,MOS)器件,微机电系统(Micro-Electro-Mechanical Systems,MEMS)的MEMS器件等。本申请中,不对微元件的类型作限定,并不限于此处所列举的示例。本文将以转移Micro-LED芯片为例进行说明。The present application provides a method for transferring micro-elements, which can be used for transferring micro-light-emitting diode devices (Micro-LEDs), but is not limited to this device, and can also be used for transferring other micro-elements. For example, the micro-component can also be a diode array of a photodiode array detector (Photo-diode Array, PDA), a MOS (Metal Oxide Semiconductor, MOS) device, a MEMS device of a micro-electro-mechanical system (Micro-Electro-Mechanical Systems, MEMS), etc. . In the present application, there is no limitation on the type of the micro-element, and it is not limited to the examples listed here. This article will take the transfer of Micro-LED chips as an example.
请参阅图1,图1是本申请一实施方式中微元件转移方法的流程示意图,需注意的是,若有实质上相同的结果,本实施例并不以图1所示的流程顺序为限。如图1所示,在该实施方式中,转移方法包括如下步骤:Please refer to Fig. 1. Fig. 1 is a schematic flow diagram of a micro-element transfer method in an embodiment of the present application. It should be noted that if there are substantially the same results, this embodiment is not limited to the flow sequence shown in Fig. 1 . As shown in Figure 1, in this embodiment, the transfer method includes the following steps:
S110:将具有微元件的供给基板与承载基板对位。S110: Align the supply substrate with the micro-components with the carrier substrate.
其中,供给基板具有微元件的一侧朝向承载基板的承载面,微元件背离供给基板的表面具有电极。Wherein, the side of the supply substrate having the micro-elements faces the carrying surface of the carrying substrate, and the surface of the micro-elements facing away from the supply substrate has electrodes.
微元件可以是Micro-LED芯片,如氮化镓(GaN)基Micro-LED芯片,还可以分为紫光Micro-LED芯片、蓝光Micro-LED芯片、绿光Micro-LED芯片等。目前Micro-LED芯片难以在目标基板(如玻璃基板)上直接生长出来,需要依靠转移技术将在供给基板上生长的Micro-LED芯片转移到目标基板上。Micro-components can be Micro-LED chips, such as gallium nitride (GaN)-based Micro-LED chips, and can also be divided into purple-light Micro-LED chips, blue-light Micro-LED chips, green-light Micro-LED chips, etc. At present, it is difficult to grow Micro-LED chips directly on target substrates (such as glass substrates), and it is necessary to rely on transfer technology to transfer Micro-LED chips grown on supply substrates to target substrates.
供给基板可以是蓝宝石基板,可以在蓝宝石基板上生长出具有预定尺寸、预定类型的Micro-LED芯片。在其他实施方式中,供给基板还可以是硅基基板等。The supply substrate may be a sapphire substrate, and Micro-LED chips of a predetermined size and a predetermined type may be grown on the sapphire substrate. In other embodiments, the supply substrate may also be a silicon-based substrate or the like.
承载基板为硬性材料的基板,以起到固定承载作用。例如可以是玻璃基板、聚合物(树脂)基板、蓝宝石基板、陶瓷基板等。承载基板上还可以设置有粘合剂,以使承载基板能够键合固定微元件。The bearing substrate is a substrate of hard material to play a role of fixing and bearing. For example, it may be a glass substrate, a polymer (resin) substrate, a sapphire substrate, a ceramic substrate, or the like. Adhesives may also be provided on the carrier substrate, so that the carrier substrate can be bonded and fixed to micro components.
S120:减少供给基板与承载基板之间的距离至微元件的电极接触承载基板的承载面,同时微元件背离供给基板的表面除电极之外的区域和承载基板的承载面之间也相互直接或间接接触。S120: Reduce the distance between the supply substrate and the carrying substrate until the electrodes of the micro-components contact the carrying surface of the carrying substrate, and at the same time, the area of the surface of the micro-component away from the supply substrate except for the electrodes and the carrying surface of the carrying substrate are also directly or mutually indirect contact.
其中,在将供给基板上生长的Micro-LED芯片转移到目标基板上时,首先需要将带有Micro-LED芯片的供给基板压合在承载基板上,然后剥离供给基板,使Micro-LED芯片与供给基板分离。Among them, when transferring the Micro-LED chip grown on the supply substrate to the target substrate, it is first necessary to press the supply substrate with the Micro-LED chip on the carrier substrate, and then peel off the supply substrate to make the Micro-LED chip and the target substrate. Supply substrate detachment.
在将带有Micro-LED芯片的供给基板与临时承载基板压合时,由于Micro-LED芯片电极比较突出,会造成LED芯片电极面不平,或者导致Micro-LED芯片底部的气泡无法完全排出,这都会使供给基板与承载基板的结合面存在空隙,空隙的存在会造成剥离供给基板时Micro-LED芯片底部无支撑,且在受力时容易受力集中,导致承载基板对Micro-LED芯片的固定性不够,这样在剥离供给基板时,容易对Micro-LED芯片造成损伤。如一般会使用激光剥离供给基板,在用激光照射供给基板时,激光照射产生的瞬间冲击波会造成Micro-LED芯片的断裂、缺角等问题。When pressing the supply substrate with the Micro-LED chip and the temporary carrier substrate, because the electrode of the Micro-LED chip is relatively protruding, the electrode surface of the LED chip will be uneven, or the air bubbles at the bottom of the Micro-LED chip will not be completely discharged. There will be gaps on the bonding surface between the supply substrate and the carrier substrate. The existence of the gap will cause no support at the bottom of the Micro-LED chip when the supply substrate is peeled off, and it is easy to concentrate the force when the force is applied, resulting in the fixing of the carrier substrate to the Micro-LED chip. The resistance is not enough, so it is easy to cause damage to the Micro-LED chip when the supply substrate is peeled off. For example, a laser is generally used to lift off the supply substrate. When the supply substrate is irradiated with laser light, the instantaneous shock wave generated by the laser irradiation will cause problems such as breakage and missing corners of the Micro-LED chip.
为了解决这一技术问题,本申请通过控制微元件的电极接触承载基板的承载面,且同时微元件背离供给基板的表面除电极之外的区域和承载基板的承载面之间也相互直接或间接接触。能够使承载基板与供给基板结合处没有空隙,进而增加Micro-LED芯片与承载基板之间的结合面积,提升Micro-LED芯片在承载基板上的稳定性,还有利于排出Micro-LED芯片下方的空气,从而减轻激光剥离时Micro-LED芯片碎裂的风险。In order to solve this technical problem, the application controls the electrodes of the micro-elements to contact the carrying surface of the carrying substrate, and at the same time, the area of the surface of the micro-element away from the supply substrate except for the electrodes and the carrying surface of the carrying substrate are also directly or indirectly connected to each other. touch. It can make there is no gap between the carrier substrate and the supply substrate, thereby increasing the bonding area between the Micro-LED chip and the carrier substrate, improving the stability of the Micro-LED chip on the carrier substrate, and is also conducive to the discharge of micro-LED chips. Air, thereby mitigating the risk of Micro-LED chips breaking during laser lift-off.
S130:在微元件粘附于承载基板的承载面后去除供给基板。S130: removing the supply substrate after the micro components are adhered to the carrying surface of the carrying substrate.
其中,可以使用激光对供给基板进行剥离,也可以使用化学腐蚀的方式对供给基板进行剥离。去除供给基板后,微元件因粘附力留在承载基板上。Wherein, laser can be used to peel off the supply substrate, and chemical etching can also be used to peel off the supply substrate. After removal of the donor substrate, the microcomponents remain on the carrier substrate due to adhesive forces.
S140:利用转移头对承载基板上的微元件进行转移。S140: Using the transfer head to transfer the micro components on the carrier substrate.
其中,转移头可以为聚二甲基硅氧烷转移头(polydimethylsiloxane,PDMS)、静电转移头、真空转移头中的一种或多种,在此不对转移头的性质做限定。可以选择性的将转移头与部分微元件贴合,以实现部分转移。同时应控制转移头对微元件的粘附力大于承载基板对微元件的粘附力,以使转移头能够顺利从承载基板上将微元件拾取转移。Wherein, the transfer head may be one or more of a polydimethylsiloxane transfer head (polydimethylsiloxane, PDMS), an electrostatic transfer head, and a vacuum transfer head, and the nature of the transfer head is not limited here. The transfer head can be selectively attached to some micro components to realize partial transfer. At the same time, the adhesion force of the transfer head to the micro-components should be controlled to be greater than the adhesion force of the carrier substrate to the micro-components, so that the transfer head can smoothly pick up and transfer the micro-components from the carrier substrate.
目前常用转移头结构中,多个转移头一体成型在转移基板的转移头基台上,即多个转移头会通过转移头基台相连接。这样在将转移头与承载基板压合时,转移头基台表面发生形变时,会造成转移头表面发生形变,而转移头的形变会引起拾取后Micro-LED芯片间Pitch的改变,从而影响后续工艺的进行。In the currently commonly used transfer head structure, multiple transfer heads are integrally formed on the transfer head base of the transfer substrate, that is, the multiple transfer heads are connected through the transfer head base. In this way, when the transfer head and the carrier substrate are pressed together, when the surface of the transfer head base is deformed, the surface of the transfer head will be deformed, and the deformation of the transfer head will cause the change of the pitch between the Micro-LED chips after picking up, thus affecting the subsequent The progress of the process.
请参阅图2,图2是本申请一实施方式中分立式转移头的结构示意图。为了解决这一技术问题,本申请提出了一种分立式转移头,分立式转移头的多个转移头50在转移基板501上相互分立设置。通过使用分立式转移头可改善批量转移时Micro-LED芯片间Pitch改变的问题,同时该分立的转移头还可缓解后期Micro-LED芯片bonding时造成的热失配问题。Please refer to FIG. 2 . FIG. 2 is a schematic structural diagram of a discrete transfer head in an embodiment of the present application. In order to solve this technical problem, the present application proposes a discrete transfer head, in which a plurality of transfer heads 50 are separately arranged on a
请参阅图3,图3是本申请一实施方式中分立式转移头制备方法的流程示意图。在该实施方式中,转移头50可以是一种可以光刻的有机硅材料,例如UV固化的PDMS,可利用光刻工艺制备分立式转移头。具体地,在转移基板501上旋涂一层UV的PDMS胶液502;选择性曝光胶液,用显影液洗去未固化的PDMS胶液,从而形成完全分立的PDMS转移头50。转移基板为硬性材料的基板,以起到固定承载作用。例如可以是玻璃基板、聚合物(树脂)基板、蓝宝石基板、陶瓷基板等。在其他实施方式中,也可以通过选择性涂覆的方式制备分立式转移头,在此不做限定。Please refer to FIG. 3 . FIG. 3 is a schematic flowchart of a method for manufacturing a discrete transfer head in an embodiment of the present application. In this embodiment, the
在一实施方式中,可以对承载基板进行处理,以实现微元件的电极接触承载基板的承载面,且同时微元件背离供给基板的表面除电极之外的区域和承载基板的承载面之间也相互直接接触。In one embodiment, the carrier substrate can be processed so that the electrodes of the micro-components contact the carrier surface of the carrier substrate, and at the same time, there is also a gap between the area of the surface of the micro-element away from the supply substrate except for the electrodes and the carrier surface of the carrier substrate. direct contact with each other.
请参阅图4,图4是本申请一实施方式中承载基板的结构示意图。在该实施方式中,可将承载基板30的承载面对应微元件10的电极101的位置处理成对应微元件10的电极101的凹槽301。这样可使供给基板与承载基板贴合时,利用凹槽来容纳电极,以补偿Micro-LED芯片电极面与其他区域的高度差,使结合面为一个平整面,以提升Micro-LED芯片在承载基板上的稳定性。另外,通过设置凹槽还可以避免Micro-LED芯片在承载基板上倾斜的现象,有利于后续批量转移时Micro-LED芯片的拾取。Please refer to FIG. 4 . FIG. 4 is a schematic structural diagram of a carrier substrate in an embodiment of the present application. In this embodiment, the position of the carrying surface of the carrying
其中,凹槽的形状与微元件的电极的形状相匹配,且凹槽的尺寸等于微元件的电极的大小,或略大于微元件的电极的大小,如可以有10%的余量,以提高对位准确性,降低对位难度,同时降低电极被损伤的概率。根据电极所在位置,Micro-LED芯片可以分为垂直结构(图4b所示)和倒装结构(图4a所示),垂直结构Micro-LED芯片的阴极、阳极位于芯片的上下两侧,倒装结构Micro-LED的阴极、阳极位于芯片的同一侧,对应地,凹槽也被设计成对应一个电极或对应两个电极。Wherein, the shape of the groove matches the shape of the electrode of the micro-element, and the size of the groove is equal to the size of the electrode of the micro-element, or slightly larger than the size of the electrode of the micro-element, as there can be a 10% margin, to improve Alignment accuracy, reduce the difficulty of alignment, and reduce the probability of electrode damage. According to the location of the electrodes, Micro-LED chips can be divided into vertical structure (shown in Figure 4b) and flip-chip structure (shown in Figure 4a). The cathode and anode of the structural Micro-LED are located on the same side of the chip, and correspondingly, the groove is also designed to correspond to one electrode or to correspond to two electrodes.
在一实施方式中,可以直接对承载基板进行处理,在承载基板上蚀刻出凹槽,凹槽内可进一步填充粘合剂,以增强对Micro-LED芯片的粘合力,此时凹槽的尺寸应预留粘合剂的空间,即应保证填充粘合剂后的空间尺寸大于或等于电极的尺寸。在另一实施方式中,也可以是在承载基板上形成整层粘合层,然后直接在粘合层上设置凹槽,在此对凹槽的设置形式不做限定。In one embodiment, the carrier substrate can be directly processed, and a groove is etched on the carrier substrate, and the groove can be further filled with adhesive to enhance the adhesion to the Micro-LED chip. The size should reserve a space for the adhesive, that is, it should ensure that the size of the space filled with the adhesive is greater than or equal to the size of the electrode. In another embodiment, it is also possible to form an entire adhesive layer on the carrier substrate, and then directly arrange grooves on the adhesive layer, and the arrangement form of the grooves is not limited here.
请结合参阅图5-图10,对微元件的转移方法进行详细说明,具体如下:Please refer to Figure 5-Figure 10 to describe the transfer method of micro components in detail, as follows:
请参阅图5,图5是本申请另一实施方式中微元件的转移方法提供微元件的示意图。该实施方式中,供给基板20上依次排列有多个Micro-LED芯片10,图示Micro-LED芯片10为倒装结构,且Micro-LED芯片10的阴极和阳极形成在远离供给基板20的第一表面上。在其他实施方式中,Micro-LED芯片10也可以是垂直结构,垂直结构的Micro-LED芯片的阴极、阳极位于芯片的上下两侧。Please refer to FIG. 5 . FIG. 5 is a schematic diagram of micro-components provided by a transfer method of micro-components in another embodiment of the present application. In this embodiment, a plurality of
请参阅图6,图6是本申请另一实施方式中微元件的转移方法提供承载基板的示意图。该实施方式中,承载基板30为玻璃基板,承载基板30上设置有粘合剂层302,粘合剂层可以是可纳米压印的胶材层,例如有机硅材料层。可利用纳米压印或者光刻的技术对粘合剂层进行处理,在对应Micro-LED芯片的电极101的位置形成对应电极101形状的凹槽301,凹槽的尺寸略大于电极101的尺寸。采用此种设置,增加Micro-LED芯片与承载基板之间的结合面积,提升Micro-LED芯片在承载基板上的稳定性,还有利于排出Micro-LED芯片下方的空气,从而减轻激光剥离时Micro-LED芯片碎裂的风险。Please refer to FIG. 6 . FIG. 6 is a schematic diagram of a carrier substrate provided by a transfer method of micro components in another embodiment of the present application. In this embodiment, the
请参阅图7,图7是本申请另一实施方式中微元件的转移方法贴合供给基板和承载基板的示意图。该实施方式中,将供给基板20与承载基板30对位贴合,使Micro-LED芯片的电极陷入承载基板的凹槽中与承载基板30的承载面结合,同时因为凹槽补偿了电极面与其他区域的高度差,Micro-LED芯片除电极以外的其他区域也与凹槽外的承载面直接接触。Please refer to FIG. 7 . FIG. 7 is a schematic diagram of attaching a supply substrate and a carrier substrate by a transfer method of micro components in another embodiment of the present application. In this embodiment, the
请参阅图8,图8是本申请另一实施方式中微元件的转移方法剥离供给基板的示意图。将供给基板20进行激光剥离,将激光剥离后的供给基板20去除,使Micro-LED芯片10留在承载基板30上。在其他实施方式中,也可以使用化学腐蚀等其他剥离的方式进行剥离。Please refer to FIG. 8 . FIG. 8 is a schematic diagram of peeling off a supply substrate in a transfer method of micro components in another embodiment of the present application. The
请参阅图9,图9是本申请另一实施方式中微元件的转移方法提供转移头的示意图。该实施方式中,提供转移头50,转移头50为分立式转移头,将转移头50与Micro-LED芯片10贴合,使Micro-LED芯片10被转移头50固定。移动转移头50,对Micro-LED芯片10进行拾取。Please refer to FIG. 9 . FIG. 9 is a schematic diagram of a transfer head provided by a transfer method of micro components in another embodiment of the present application. In this embodiment, a
请参阅图10,图10是本申请另一实施方式中微元件的转移方法转移微元件的示意图。该实施方式中,提供目标基板60,目标基板60上设置有驱动电路及接触电极601,将转移头50与目标基板60对位贴合,将Micro-LED芯片10的阴阳极与接触电极601结合连接。至此,实现对Micro-LED芯片的转移。Please refer to FIG. 10 . FIG. 10 is a schematic diagram of transferring a micro-element by a micro-element transfer method in another embodiment of the present application. In this embodiment, a
在该实施方式中,Micro-LED芯片为倒装结构时,在将Micro-LED芯片与目标基板结合后,还可以对Micro-LED芯片进行封装处理,在Micro-LED芯片上形成封装层,以保护Micro-LED芯片及接触电极。具体的封装材料和封装工艺可以选用常规材料和工艺,在此不做限定。In this embodiment, when the Micro-LED chip has a flip-chip structure, after the Micro-LED chip is combined with the target substrate, the Micro-LED chip can also be packaged to form a packaging layer on the Micro-LED chip to Protect Micro-LED chips and contact electrodes. The specific packaging material and packaging process can be selected from conventional materials and processes, which are not limited here.
在另一实施方式中,Micro-LED芯片为垂直结构时,其阴阳极位于芯片的上下两侧,在芯片转移完成后,还需要制作另一面的电极。具体制作方法可选用常规工艺,在此不做限定。In another embodiment, when the Micro-LED chip has a vertical structure, the cathode and anode are located on the upper and lower sides of the chip, and after the transfer of the chip is completed, electrodes on the other side need to be fabricated. The specific manufacturing method may be a conventional process, which is not limited here.
在另一实施方式中,可以对供给基板进行处理,以实现微元件的电极接触承载基板的承载面,且同时微元件背离供给基板的表面除电极之外的区域和承载基板的承载面之间也相互间接接触。In another embodiment, the supply substrate can be processed so that the electrodes of the micro-components contact the carrying surface of the carrying substrate, and at the same time, the surface of the micro-component facing away from the surface of the supply substrate except for the electrode is between the carrying surface of the carrying substrate and the carrying surface of the carrying substrate. also indirect contact with each other.
请参阅图11,图11是本申请一实施方式中供给基板的结构示意图。在该实施方式中,可在供给基板20具有微元件10的一侧形成平坦化层70,平坦化层70的表面与微元件10的电极的表面齐平。Please refer to FIG. 11 . FIG. 11 is a schematic structural diagram of a supply substrate in an embodiment of the present application. In this embodiment, the
该实施方式中,通过设置平坦化层,能够填平微元件的电极与微元件其他区域的高度差,使供给基板表面为一平面,这样不仅能够增大供给基板与承载基板的结合面积,提高微元件在承载基板上的稳定性,还有利于排除微元件下方的空气,从而减轻激光剥离时微元件碎裂的风险。同时还可避免供给基板与承载基板的对位,使贴合效果更好。In this embodiment, by providing a planarization layer, the height difference between the electrode of the micro-element and other regions of the micro-element can be filled, and the surface of the supply substrate can be flat, which can not only increase the bonding area of the supply substrate and the carrying substrate, but also improve The stability of the micro-components on the carrier substrate also helps to exclude the air under the micro-components, thereby reducing the risk of micro-components fragmentation during laser lift-off. At the same time, the alignment between the supply substrate and the carrying substrate can be avoided, so that the bonding effect is better.
在一实施方式中,可以利用无机化合物、有机光刻胶等材料来制作平坦化层,如可用二氧化硅、氮化硅、SU-8等材料。可以使用旋涂、喷墨打印、蒸镀、沉积等方式形成平坦化层。In one embodiment, the planarization layer can be made of materials such as inorganic compounds and organic photoresists, such as silicon dioxide, silicon nitride, SU-8 and other materials. The planarization layer can be formed by spin coating, inkjet printing, vapor deposition, deposition and the like.
请结合参阅图5和图12,对微元件的转移方法进行详细说明,具体如下:Please refer to Figure 5 and Figure 12 together to describe the transfer method of micro components in detail, as follows:
请参阅图5,提供带有Micro-LED芯片10的供给基板20。Referring to FIG. 5 , a
在供给基板20上旋涂一层光刻胶或者蒸镀一层无机氧化物,形成平坦化层,平坦化层的高度与Micro-LED芯片的电极高度平齐。图形化平坦化层,暴露出Micro-LED芯片的的电极。Spin-coat a layer of photoresist or vapor-deposit a layer of inorganic oxide on the
请参阅图12,图12是本申请又一实施方式中微元件的转移方法贴合供给基板与承载基板的示意图。Please refer to FIG. 12 . FIG. 12 is a schematic diagram of attaching a supply substrate and a carrier substrate by a micro-component transfer method in another embodiment of the present application.
提供承载基板30,承载基板30上形成有一层粘合剂层302,将供给基板20与承载基板30贴合,Micro-LED芯片的的电极和平坦化层均与承载基板的承载面之间相互直接接触。该实施方式中,承载基板的表面为一平面,不设置凹槽/凸起,对应地,粘合剂层也是一平面。A
随后进行激光剥离、拾取转移等步骤,具体与上述实施方式中的相同,请参阅上述实施方式的描述,在此不再赘述。Steps such as laser lift-off, pick-up and transfer are then carried out, which are the same as those in the above-mentioned embodiment, please refer to the description of the above-mentioned embodiment, and will not be repeated here.
在又一实施方式中,还可以借助其他辅助工具,以实现微元件的电极接触承载基板的承载面,且同时微元件背离供给基板的表面除电极之外的区域和承载基板的承载面之间也相互间接接触。In yet another embodiment, other auxiliary tools can also be used to realize that the electrodes of the micro-elements contact the carrying surface of the carrying substrate, and at the same time, the surface of the micro-element away from the supply substrate is between the area except the electrodes and the carrying surface of the carrying substrate. also indirect contact with each other.
请结合参阅图13和图14,图13是本申请一实施方式中网格板的剖面结构示意图,图14是本申请一实施方式中网格板的俯视结构示意图。该实施方式中,提供一种网格板,网格板80具有形状尺寸与微元件的电极匹配的通孔801,通孔801的排布方式与微元件的电极的位置排布相对应,网格板80的厚度等于微元件的电极的高度。Please refer to FIG. 13 and FIG. 14 in conjunction. FIG. 13 is a schematic cross-sectional structure diagram of a grid plate in an embodiment of the present application, and FIG. 14 is a schematic top view structure diagram of a grid plate in an embodiment of the present application. In this embodiment, a grid plate is provided. The
请参阅图15,图15是本申请再一实施方式中微元件的转移方法贴合供给基板、网格板与承载基板的示意图。在将供给基板与承载基板贴合前,将网格板80置于供给基板20和承载基板30之间,贴合供给基板20、网格板80和承载基板30,以利用网格板填平微元件电极与其他区域的高度差,使供给基板表面为一平面,以增大承载基板与供给基板的结合面积,提高微元件的稳定性,还有利于排除微元件下方的空气,从而降低微元件受损的风险。Please refer to FIG. 15 . FIG. 15 is a schematic diagram of a transfer method for attaching a supply substrate, a grid plate and a carrier substrate in yet another embodiment of the present application. Before bonding the supply substrate and the carrier substrate, the
网格板可以是由有机材料制成的,网格板还可以具有一定的粘性,这样可以起到粘合供给基板与承载基板的作用。这种情况下,承载基板上可以不再设置粘合剂层。The grid plate can be made of organic materials, and the grid plate can also have a certain degree of viscosity, which can play a role in bonding the supply substrate and the carrying substrate. In this case, no adhesive layer may be provided on the carrier substrate.
该实施方式中,通过利用独立的网格板,不再需要对供给基板或承载基板进行处理,减少转移工艺,且在微元件结构和排布方式相同的情况下可以重复使用,更加灵活便捷。In this embodiment, by using an independent grid plate, it is no longer necessary to process the supply substrate or the carrier substrate, reducing the transfer process, and can be reused under the condition of the same structure and arrangement of micro components, which is more flexible and convenient.
以上实施方式,在微元件转移过程中,补偿了微元件电极面与其他区域的高度差,能够增大供给基板与承载基板的结合面积,提高微元件在承载基板上的稳定性,还有利于排除微元件下方的空气,从而减轻激光剥离时微元件碎裂的风险,提高转移良率。In the above embodiment, the height difference between the electrode surface of the micro-component and other regions is compensated during the micro-component transfer process, which can increase the bonding area between the supply substrate and the carrier substrate, improve the stability of the micro-component on the carrier substrate, and is also beneficial Exclude the air under the micro-components, thereby reducing the risk of micro-component fragmentation during laser lift-off, and improving the transfer yield.
请结合参阅图2和图4,基于上述微元件的转移方法,本申请还提供一种微元件的转移装置,转移装置包括承载基板30和转移基板501。Please refer to FIG. 2 and FIG. 4 in conjunction. Based on the above micro-component transfer method, the present application also provides a micro-component transfer device. The transfer device includes a
承载基板30上设置有凹槽301,该凹槽301与供给基板上微元件10的电极101的形状尺寸相匹配。这样可使供给基板与承载基板贴合时,利用凹槽来容纳电极,以补偿Micro-LED芯片电极面与其他区域的高度差,使结合面为一个平整面,以提升Micro-LED芯片在承载基板上的稳定性。另外,通过设置凹槽还可以避免Micro-LED芯片在承载基板上倾斜的现象,有利于后续批量转移时Micro-LED芯片的拾取。具体请参阅上述实施方式的描述,在此不再赘述。A
转移基板501包括至少一个转移头50,用于吸附并转移微元件。具体地,转移基板501上设置有多个转移头50,多个转移头50相互分立设置。通过使用分立式转移头可改善批量转移时Micro-LED芯片间Pitch改变的问题,同时该分立的转移头还可缓解后期Micro-LED芯片bonding时造成的热失配问题。具体请参阅上述实施方式的描述,在此不再赘述。The
请参阅图11,基于上述微元件的转移方法,本申请还提供一种供给基板20,该供给基板30具有微元件10的一侧设置有平坦化层70,平坦化层70的表面与微元件的电极的表面齐平。通过设置平坦化层,能够填平微元件的电极与微元件其他区域的高度差,使供给基板表面为一平面,这样不仅能够提高能够增大供给基板与承载基板的结合面积,提高微元件在承载基板上的稳定性,还有利于排除微元件下方的空气,从而减轻激光剥离时微元件碎裂的风险。同时还可避免供给基板与临时基板的对位,使贴合效果更好。具体请参阅上述实施方式的描述,在此不再赘述。Please refer to FIG. 11 , based on the transfer method of the above-mentioned micro-components, the present application also provides a
以上所述仅为本申请的实施方式,并非因此限制本申请的专利范围,凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本申请的专利保护范围内。The above is only the implementation of the application, and does not limit the patent scope of the application. Any equivalent structure or equivalent process conversion made by using the specification and drawings of the application, or directly or indirectly used in other related technologies fields, are all included in the scope of patent protection of this application in the same way.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115588679A (en) * | 2021-06-23 | 2023-01-10 | 重庆康佳光电技术研究院有限公司 | Transfer method of light emitting diode chip, temporary substrate and display assembly |
| CN115732613B (en) * | 2021-08-26 | 2025-05-16 | 成都辰显光电有限公司 | Micro-component transfer device and micro-component transfer method |
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| CN115775813A (en) * | 2021-09-07 | 2023-03-10 | 重庆康佳光电技术研究院有限公司 | Temporary storage plate and manufacturing method thereof, transfer method of LED chip and display panel |
| CN115771214A (en) * | 2021-09-09 | 2023-03-10 | 日月光半导体制造股份有限公司 | Mold and apparatus for forming a plurality of separate components |
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| CN114284401A (en) * | 2021-12-24 | 2022-04-05 | 深圳市思坦科技有限公司 | Micro light-emitting diode transfer method and display panel |
| CN114335262A (en) * | 2021-12-29 | 2022-04-12 | 深圳市思坦科技有限公司 | Transfer device and LED chip transfer method |
| CN114447182B (en) * | 2022-01-19 | 2023-10-17 | Tcl华星光电技术有限公司 | Light emitting diode transfer method, light emitting substrate and display panel |
| CN116730275A (en) * | 2022-03-02 | 2023-09-12 | 北京小米移动软件有限公司 | Transfer device and transfer method |
| CN115119410A (en) * | 2022-06-21 | 2022-09-27 | 深圳市百柔新材料技术有限公司 | A method for making miniLED backlight boards by interconnecting high-precision single-sided circuits |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106170849A (en) * | 2015-10-20 | 2016-11-30 | 歌尔股份有限公司 | The transfer method of micro-light emitting diode, manufacture method, device and electronic equipment |
| CN107017319A (en) * | 2017-05-23 | 2017-08-04 | 深圳市华星光电技术有限公司 | The preparation method of colored micro- LED array substrate |
| CN208352323U (en) * | 2018-06-29 | 2019-01-08 | 江西兆驰半导体有限公司 | A kind of light-emitting diode chip for backlight unit transfer device |
| JP2019015899A (en) * | 2017-07-10 | 2019-01-31 | 株式会社ブイ・テクノロジー | Display device manufacturing method, chip component transferring method, and transferring member |
| CN109661122A (en) * | 2018-11-09 | 2019-04-19 | 华中科技大学 | A selective mass transfer method suitable for miniature light-emitting diodes |
| CN110265348A (en) * | 2019-06-17 | 2019-09-20 | 上海天马微电子有限公司 | A kind of transfer substrate, transfer method and transfer equipment of light-emitting diode |
| CN110581203A (en) * | 2019-08-09 | 2019-12-17 | 康佳集团股份有限公司 | A mass transfer method and device for Micro-LED micro components |
-
2019
- 2019-11-06 CN CN201911077655.8A patent/CN112768370B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106170849A (en) * | 2015-10-20 | 2016-11-30 | 歌尔股份有限公司 | The transfer method of micro-light emitting diode, manufacture method, device and electronic equipment |
| CN107017319A (en) * | 2017-05-23 | 2017-08-04 | 深圳市华星光电技术有限公司 | The preparation method of colored micro- LED array substrate |
| JP2019015899A (en) * | 2017-07-10 | 2019-01-31 | 株式会社ブイ・テクノロジー | Display device manufacturing method, chip component transferring method, and transferring member |
| CN208352323U (en) * | 2018-06-29 | 2019-01-08 | 江西兆驰半导体有限公司 | A kind of light-emitting diode chip for backlight unit transfer device |
| CN109661122A (en) * | 2018-11-09 | 2019-04-19 | 华中科技大学 | A selective mass transfer method suitable for miniature light-emitting diodes |
| CN110265348A (en) * | 2019-06-17 | 2019-09-20 | 上海天马微电子有限公司 | A kind of transfer substrate, transfer method and transfer equipment of light-emitting diode |
| CN110581203A (en) * | 2019-08-09 | 2019-12-17 | 康佳集团股份有限公司 | A mass transfer method and device for Micro-LED micro components |
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