TW201743373A - Inspection method, inspection device, laser processing device and expansion device of processed workpiece capable of confirming the state of the modified layer used as the starting point at the time of fracturing the processed workpiece - Google Patents
Inspection method, inspection device, laser processing device and expansion device of processed workpiece capable of confirming the state of the modified layer used as the starting point at the time of fracturing the processed workpiece Download PDFInfo
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- TW201743373A TW201743373A TW106114601A TW106114601A TW201743373A TW 201743373 A TW201743373 A TW 201743373A TW 106114601 A TW106114601 A TW 106114601A TW 106114601 A TW106114601 A TW 106114601A TW 201743373 A TW201743373 A TW 201743373A
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- 238000007689 inspection Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000003384 imaging method Methods 0.000 claims abstract description 28
- 230000001678 irradiating effect Effects 0.000 claims abstract description 12
- 238000002407 reforming Methods 0.000 claims description 29
- 235000012431 wafers Nutrition 0.000 claims description 22
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000004049 embossing Methods 0.000 claims 1
- 230000007246 mechanism Effects 0.000 description 23
- 239000000463 material Substances 0.000 description 7
- 230000002950 deficient Effects 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 230000035945 sensitivity Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- General Chemical & Material Sciences (AREA)
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
發明領域 本發明是有關於一種能夠確認成為破斷被加工物之時的起點之改質層的狀態的被加工物的檢查方法與檢查裝置等。FIELD OF THE INVENTION The present invention relates to an inspection method, an inspection apparatus, and the like of a workpiece that can confirm the state of a reforming layer that is a starting point when the workpiece is broken.
發明背景 將以矽、或SiC、藍寶石等的材料所構成之晶圓分割成複數個晶片時，是藉由將例如穿透性的雷射光束聚光並使其產生多光子吸收，以將晶圓的內部局部地改質來形成改質層(改質區域)(參照例如專利文獻1、2)。由於此改質層比其他區域脆，因此在之後僅須施加較小的力，便能將晶圓破斷來分割成複數個晶片。BACKGROUND OF THE INVENTION When a wafer made of tantalum or a material such as SiC or sapphire is divided into a plurality of wafers, the crystal is irradiated by, for example, a penetrating laser beam to cause multiphoton absorption. The inside of the circle is locally modified to form a modified layer (modified region) (see, for example, Patent Documents 1 and 2). Since the modified layer is more brittle than the other regions, the wafer can be broken to divide into a plurality of wafers after only a small force has to be applied.
然而，在以上述之方法分割晶圓等之被加工物時，必須沿設定於被加工物的分割預定線(切割道)確實地形成改質層。因此，有下列方案被提出：使用對於紅外線區域具靈敏度的照相機等來拍攝被加工物的内部，而確認改質層之位置的確認方法等(參照例如專利文獻2)。 先前技術文獻 專利文獻However, when the workpiece such as a wafer is divided by the above method, it is necessary to form the reformed layer surely along the planned dividing line (cutting path) set on the workpiece. Therefore, there has been proposed a method of confirming the position of the modified layer by photographing the inside of the workpiece using a camera or the like having sensitivity to the infrared region (see, for example, Patent Document 2). Prior Technical Literature Patent Literature
專利文獻1：日本專利特開第2005-223284號公報 專利文獻2：日本專利特開2005-169407號公報Patent Document 1: Japanese Patent Laid-Open No. 2005-223284. Patent Document 2: Japanese Patent Laid-Open No. Hei No. 2005-169407
發明概要 發明欲解決之課題 然而，形成於被加工物之内部的改質層的寬度狹窄，即便採用如上所述之確認方法仍無法輕易地掌握改質層的狀態。因此，現實狀況是在實際地試著將被加工物破斷以前，並無法適當地判定是否已形成所需的改質層。Disclosure of the Invention Problems to be Solved by the Invention However, the width of the reforming layer formed inside the workpiece is narrow, and the state of the reforming layer cannot be easily grasped even by the above-described confirmation method. Therefore, the reality is that it is not possible to appropriately determine whether or not the desired reforming layer has been formed before actually trying to break the workpiece.
本發明是有鑒於所述問題點而作成的發明，其目的在於提供一種能夠適切且輕易地判定改質層之狀態的被加工物之檢查方法、檢查裝置、雷射加工裝置、或擴張裝置。 用以解決課題之手段The present invention has been made in view of the above problems, and an object of the invention is to provide a method, an inspection apparatus, a laser processing apparatus, and an expansion apparatus for an object to be processed which can appropriately and easily determine the state of a modified layer. Means to solve the problem
依據本發明之第1態樣，可提供一種被加工物的檢查方法，其具備： 改質層形成步驟，藉由照射對於被加工物具有穿透性之波長的雷射光束，以在被加工物的内部形成成為破斷被加工物之時的起點的改質層，並且使其在被加工物的露出之面上產生對應於該改質層的凹凸； 攝像步驟，藉由使從光源所放射的光在被加工物的露出之該面上反射而朝投影面照射，以形成強調了該凹凸的投影像，並且拍攝該投影像來形成圖像；及 判定步驟，根據該圖像，判定該改質層的狀態。According to a first aspect of the present invention, a method of inspecting a workpiece can be provided, comprising: a reforming layer forming step of irradiating a laser beam having a wavelength that is transparent to a workpiece to be processed The inside of the object forms a modified layer which is a starting point when the workpiece is broken, and causes unevenness corresponding to the modified layer on the exposed surface of the workpiece; the imaging step is performed by the light source The emitted light is reflected on the exposed surface of the workpiece and irradiated toward the projection surface to form a projection image that emphasizes the unevenness, and the projection image is captured to form an image; and a determination step of determining based on the image The state of the modified layer.
在本發明的第1態樣中，亦可為被加工物是在藉由複數條分割預定線所區劃出之正面側的區域中形成有器件的晶圓，且該改質層是沿該分割預定線而形成。In the first aspect of the present invention, the workpiece may be a wafer in which a device is formed in a region on the front side of the plurality of predetermined lines, and the modified layer is along the division. Formed by a predetermined line.
又，在本發明的第1態樣中，亦可具備： 切割膠帶貼附步驟，在該改質層形成步驟之前，在被加工物上貼附切割膠帶；及 擴張分割步驟，在該改質層形成步驟之後，擴張該切割膠帶並對被加工物賦與力，以將該改質層作為破斷的起點並將被加工物分割成複數個晶片，且可將該擴張分割步驟與該攝像步驟並行而實施。Moreover, the first aspect of the present invention may further include: a dicing tape attaching step of attaching a dicing tape to the workpiece before the reforming layer forming step; and an expanding and dividing step, wherein the grading After the layer forming step, the dicing tape is expanded and a force is applied to the workpiece to take the modified layer as a starting point of breaking and the workpiece is divided into a plurality of wafers, and the expansion dividing step and the image capturing can be performed. The steps are implemented in parallel.
依據本發明的第2態樣，可提供一種檢查裝置，是用於檢查藉由照射具有穿透性之波長的雷射光束而在内部形成成為破斷之起點的改質層，並且在露出之面上產生有對應於該改質層之凹凸的被加工物的該改質層，該檢查裝置具備：保持台，保持被加工物；光源，對於保持在該保持台之被加工物的露出之該面照射光；投影面，藉由照射已在被加工物上被反射之來自光源的光，而形成強調了該凹凸的投影像；攝像設備，拍攝形成於該投影面的該投影像並形成圖像；及判定設備，將所形成的該圖像，與預先設定的條件進行比較來判定該改質層的狀態。According to a second aspect of the present invention, there is provided an inspection apparatus for inspecting a reforming layer which is formed as a starting point of breaking by irradiating a laser beam having a penetrating wavelength, and is exposed The reforming layer of the workpiece corresponding to the unevenness of the modified layer is formed on the surface, and the inspection apparatus includes: a holding table for holding the workpiece; and a light source for exposing the workpiece held by the holding table The surface is irradiated with light; the projection surface is formed by irradiating light from the light source that has been reflected on the workpiece to form a projection image that emphasizes the unevenness; and the imaging device captures the projection image formed on the projection surface and forms And an image determining device that compares the formed image with a predetermined condition to determine a state of the modified layer.
依據本發明的第3態樣，可提供一種雷射加工裝置，其具備： 工作夾台，保持被加工物； 雷射光束照射設備，藉由對保持於該工作夾台的被加工物照射雷射光束，以在被加工物的内部形成成為破斷被加工物之時的起點的改質層，並且使其在被加工物的露出之面上產生對應於該改質層的凹凸； 保持台，保持照射該雷射光束後的被加工物； 光源，對保持於該保持台的被加工物的露出之該面照射光； 投影面，藉由照射已在被加工物上被反射之來自光源的光，形成強調了該凹凸的投影像； 攝像設備，拍攝形成於該投影面的該投影像並形成圖像； 判定設備，將所形成的該圖像，與預先設定的條件進行比較來判定該改質層的狀態；及 控制設備，控制各構成要素。According to a third aspect of the present invention, there is provided a laser processing apparatus comprising: a working chuck for holding a workpiece; and a laser beam irradiation device for illuminating a workpiece held by the working chuck The light beam is formed in the inside of the workpiece to form a modified layer which is a starting point when the workpiece is broken, and causes unevenness corresponding to the modified layer on the exposed surface of the workpiece; And maintaining a workpiece after the laser beam is irradiated; the light source illuminating the surface of the workpiece held by the holding table; and the projection surface is irradiated by the light source that has been reflected on the workpiece The light is formed to form a projection image that emphasizes the unevenness; the imaging device captures the projection image formed on the projection surface and forms an image; and the determination device determines the image to be compared with a predetermined condition to determine The state of the modified layer; and the control device to control each component.
在本發明的第3態樣中，該保持台亦可為該工作夾台，亦即，能夠將工作夾台作為保持台來使用。In the third aspect of the invention, the holding table may be the working table, that is, the working table can be used as a holding table.
依據本發明的第4態樣，可提供一種擴充裝置，其具備： 支持基台，將藉由照射具有穿透性之波長的雷射光束而在内部形成成為破斷之起點的改質層，並且在露出之面上產生有對應於該改質層之凹凸的被加工物，隔著已貼附於該被加工物之切割膠帶來支持； 擴張設備，擴張該切割膠帶； 保持台，保持該被加工物； 光源，對保持於該保持台的被加工物的露出之該面照射光； 投影面，藉由照射已在被加工物上被反射之來自光源的光，形成強調了該凹凸的投影像； 攝像設備，拍攝形成於該投影面的該投影像並形成圖像； 判定設備，將所形成的該圖像，與預先設定的條件進行比較來判定該改質層的狀態；及 控制設備，控制各構成要素。According to a fourth aspect of the present invention, there is provided an expansion apparatus comprising: a support base for forming a reforming layer which is a starting point of breaking inside by irradiating a laser beam having a penetrating wavelength; And a workpiece corresponding to the unevenness of the modified layer is formed on the exposed surface, and is supported by a dicing tape attached to the workpiece; the expansion device expands the dicing tape; and the holding table holds the a workpiece; the light source illuminates the surface of the workpiece held by the holding table; and the projection surface illuminates the light from the light source that is reflected on the workpiece to form the surface a projection device that captures the projection image formed on the projection surface and forms an image; the determination device determines the state of the modified layer by comparing the formed image with a preset condition; and controls Equipment that controls each component.
在本發明的第4態樣中，該保持台亦可為該支持基台。亦即，能夠將支持基台作為保持台來使用。 發明效果In the fourth aspect of the invention, the holding stage may also be the supporting base. That is, the support base can be used as a holding station. Effect of the invention
在本發明的第1態樣之被加工物的檢查方法中，由於會藉由使從光源放射的光在產生有對應於改質層之微細的凹凸之被加工物的面上反射並照射於投影面，以形成強調了面内之凹凸的投影像，並且依據拍攝此投影像所形成的圖像來判定改質層的狀態，所以能夠依據包含強調了對應於改質層之凹凸的圖像，適當且輕易地判定改質層的狀態。In the method for inspecting a workpiece according to the first aspect of the present invention, the light emitted from the light source is reflected and irradiated on the surface on which the workpiece corresponding to the fine unevenness of the modified layer is generated. The projection surface forms a projection image that emphasizes the unevenness in the plane, and determines the state of the modified layer based on the image formed by capturing the projection image, so that the image including the unevenness corresponding to the modified layer can be included The state of the modified layer is determined appropriately and easily.
又，由於本發明的第2態樣之檢查裝置、第3態樣之雷射加工裝置、及第4態樣之擴張裝置，任一者皆具備：光源，對被加工物的露出之面照射光；投影面，藉由投影已在被加工物上被反射之來自光源的光，形成強調了面内之凹凸的投影像；攝像設備，拍攝已投影於投影面的投影像並形成圖像；及判定設備，將所形成的圖像、與預先所設定的條件進行比較來判定改質層的狀態，所以能夠實施上述之被加工物的檢查方法，並適當且輕易地判定改質層的狀態。Further, the inspection apparatus according to the second aspect of the present invention, the laser processing apparatus according to the third aspect, and the expansion apparatus of the fourth aspect each include a light source that illuminates the exposed surface of the workpiece. a projection surface that forms a projection image that emphasizes in-plane irregularities by projecting light from a light source that has been reflected on the workpiece; and an imaging device that captures a projection image that has been projected onto the projection surface and forms an image; The determination device determines the state of the modified layer by comparing the formed image with the previously set conditions. Therefore, the above-described method for inspecting the workpiece can be performed, and the state of the modified layer can be appropriately and easily determined. .
用以實施發明之形態 參照附圖，說明本發明之一態樣的實施形態。圖1是示意地顯示檢查裝置之構成例等的圖。如圖1所示，本實施形態的檢查裝置2具備有用於保持在內部形成有改質層(改質區域)的板狀之被加工物11的保持台4。保持台4之上表面的一部分是形成為保持被加工物11(或已貼附於被加工物11上的膠帶(切割膠帶)21)的保持面4a。Embodiments for Carrying Out the Invention An embodiment of an aspect of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a view schematically showing a configuration example and the like of an inspection apparatus. As shown in Fig. 1, the inspection apparatus 2 of the present embodiment includes a holding table 4 for holding a plate-shaped workpiece 11 in which a modified layer (modified region) is formed. A part of the upper surface of the holding table 4 is a holding surface 4a formed to hold the workpiece 11 (or the tape (cut tape) 21 attached to the workpiece 11).
在保持台4的上方，配置有用於對藉由保持台4所保持的被加工物11之整體照射光L1的光源6。作為光源6，能夠使用例如白熾燈或LED等。但是，光源6的種類或位置等並無限制。又，光L1可以是平行光亦可為非平行光。在將光L1設為平行光時，只要例如相對於光源6來組合透鏡等的光學元件即可。另一方面，在將光L1設為非平行光時，較理想的是使用發光區域較小而可被視為點光源的光源6。Above the holding table 4, a light source 6 for illuminating the entire surface of the workpiece 11 held by the holding table 4 with the light L1 is disposed. As the light source 6, for example, an incandescent lamp, an LED, or the like can be used. However, the type, position, and the like of the light source 6 are not limited. Further, the light L1 may be parallel light or non-parallel light. When the light L1 is set to parallel light, for example, an optical element such as a lens may be combined with respect to the light source 6. On the other hand, when the light L1 is set to be non-parallel light, it is preferable to use the light source 6 which is small in the light-emitting area and can be regarded as a point light source.
如圖1所示，在被加工物11上被反射之光L1的路徑(光路)上，設置有藉由照射反射後的光L1而形成投影像的投影面8。投影面8代表性地來說為平坦的螢幕，並形成為與被加工物11相同程度的大小。再者，此投影面8只要以至少能夠投影被加工物11之整體的態樣(位置、大小、形狀等)來設置即可。As shown in FIG. 1, a projection surface 8 on which a projection image is formed by irradiating the reflected light L1 is provided on a path (optical path) of the light L1 reflected on the workpiece 11. The projection surface 8 is typically a flat screen and is formed to the same size as the workpiece 11. Further, the projection surface 8 may be provided in a state (position, size, shape, and the like) capable of projecting at least the entire workpiece 11 .
在本實施形態中，是在保持台4的斜上方配置光源6，且在被加工物11上反射之光L1的路徑上，配置有相對於被加工物11之背面11b大致垂直的投影面8。因此，當將從光源6朝斜下方行進的光L1照射於被加工物11時，此光L1會在被加工物11的露出之面(在此為背面11b)上被反射而照射於投影面8。其結果，會在投影面8上形成反映了被加工物11的露出之面(亦即背面11b)之狀態的投影像。In the present embodiment, the light source 6 is disposed obliquely above the holding table 4, and a projection surface 8 that is substantially perpendicular to the back surface 11b of the workpiece 11 is disposed on the path of the light L1 reflected on the workpiece 11. . Therefore, when the light L1 traveling obliquely downward from the light source 6 is irradiated onto the workpiece 11, the light L1 is reflected on the exposed surface (here, the back surface 11b) of the workpiece 11 and is irradiated onto the projection surface. 8. As a result, a projection image reflecting the state of the exposed surface of the workpiece 11 (that is, the back surface 11b) is formed on the projection surface 8.
在與投影面8相向的位置上配置有用於拍攝形成於投影面8上之投影像並形成圖像的攝像單元(攝像設備)10。此攝像單元10可為例如在CCD或CMOS等之攝像元件上組合有透鏡等之光學元件的數位照相機，且將拍攝投影像而形成的圖像(影像)輸出至外部。再者，作為此攝像單元10，也能夠採用形成靜態圖像的數位照相機、形成動態圖像的數位攝影機的任一種。An imaging unit (imaging device) 10 for capturing a projection image formed on the projection surface 8 and forming an image is disposed at a position facing the projection surface 8. The imaging unit 10 is, for example, a digital camera in which an optical element such as a lens is combined with an imaging element such as a CCD or a CMOS, and an image (image) formed by capturing a projection image is output to the outside. Further, as the imaging unit 10, any one of a digital camera that forms a still image and a digital camera that forms a moving image can be used.
在攝像單元10中，連接有判定單元(判定設備)12，該判定單元是用於將從攝像單元10輸出的圖像，與預先所設定的條件進行比較，以判定形成於被加工物11上的改質層之狀態。關於以判定單元12所進行之處理等的詳細內容將後述。In the image pickup unit 10, a determination unit (determination device) 12 for comparing an image output from the image pickup unit 10 with a previously set condition to determine formation on the workpiece 11 is connected. The state of the upgrade layer. Details of the processing performed by the determination unit 12 and the like will be described later.
接著，說明使用上述之檢查裝置2的被加工物11的檢查方法之例。在本實施形態之被加工物11的檢查方法中，首先，是實施對被加工物11貼附膠帶(切割膠帶)21的膠帶貼附步驟(切割膠帶貼附步驟)。圖2是示意地顯示膠帶貼附步驟的立體圖。Next, an example of an inspection method of the workpiece 11 using the above-described inspection apparatus 2 will be described. In the method of inspecting the workpiece 11 of the present embodiment, first, a tape attaching step (cut tape attaching step) of attaching a tape (cut tape) 21 to the workpiece 11 is performed. Fig. 2 is a perspective view schematically showing a tape attaching step.
如圖2所示，被加工物11為例如以矽、SiC、玻璃、藍寶石等的材料所形成之圓盤狀的晶圓，且其正面11a側被區分成中央的器件區域、及圍繞器件區域的外周剩餘區域。器件區域是以設定成格子狀的複數條分割預定線(切割道)13進一步區劃成複數個區域，且在各個區域中形成有IC(LSI)、LED等器件15。As shown in FIG. 2, the workpiece 11 is a disk-shaped wafer formed of a material such as tantalum, SiC, glass, or sapphire, and the front surface 11a side is divided into a central device region and a surrounding device region. The remaining area of the periphery. The device region is further divided into a plurality of regions by a plurality of predetermined dividing lines (cutting streets) 13 set in a lattice shape, and devices 15 such as ICs (LSIs) and LEDs are formed in the respective regions.
再者，在本實施形態中，雖然是將以矽、SiC、玻璃、藍寶石等的材料所形成的晶圓作為被加工物11，但被加工物11的材質、形狀、構造等並無限制。例如，也能夠採用以任意之半導體、陶瓷、樹脂、金屬等的材料所形成的被加工物11。同樣地，分割預定線13的配置及器件15的種類等也無限制。In the present embodiment, a wafer formed of a material such as tantalum, SiC, glass, or sapphire is used as the workpiece 11, but the material, shape, structure, and the like of the workpiece 11 are not limited. For example, the workpiece 11 formed of a material such as any semiconductor, ceramic, resin, or metal can be used. Similarly, the arrangement of the division planned line 13 and the type of the device 15 are not limited.
在膠帶貼附步驟中，是在上述之被加工物11的正面11a側，貼附例如具有作為保護構件等之功能的膠帶21。膠帶21為例如形成為與被加工物11同等以上的大小 (例如直徑)之樹脂製的薄膜，在其第1面21a側設置有以具接著力之樹脂等所形成的接著層(糊層)。In the tape attaching step, the tape 21 having a function as a protective member or the like is attached to the front surface 11a side of the workpiece 11 described above. The tape 21 is, for example, a resin film formed to have a size (for example, a diameter) equal to or larger than the workpiece 11 , and a back layer (paste layer) formed of a resin having an adhesive force or the like is provided on the first surface 21 a side thereof. .
因此，如圖2所示，藉由使膠帶21的第1面21a側接觸於被加工物11的正面11a側，即能夠對被加工物11貼附膠帶21。藉由將如此的膠帶21貼附於被加工物11上，能夠防止例如因在之後的磨削時所施加的荷重等所造成之器件15的破損。Therefore, as shown in FIG. 2, the tape 21 can be attached to the workpiece 11 by bringing the first surface 21a side of the tape 21 into contact with the front surface 11a side of the workpiece 11. By attaching such an adhesive tape 21 to the workpiece 11, it is possible to prevent breakage of the device 15 due to, for example, a load applied during subsequent grinding.
再者，在本實施形態中，雖然是將具有與被加工物11同等之大小的膠帶21貼附於被加工物11的正面11a側，但也能夠將更大的膠帶21貼附到被加工物11。此時，只要將環狀的框架固定於膠帶21的外周部分，形成為能夠以此環狀的框架間接地支持被加工物11即可。In the present embodiment, the tape 21 having the same size as the workpiece 11 is attached to the front surface 11a side of the workpiece 11, but a larger tape 21 can be attached to the processed material. Matter 11. In this case, the annular frame is fixed to the outer peripheral portion of the tape 21, so that the workpiece 11 can be indirectly supported by the annular frame.
在膠帶貼附步驟之後，會實施磨削被加工物11的背面11b來將被加工物11形成為預定之厚度的背面磨削步驟。圖3是示意地顯示背面磨削步驟的立體圖，圖4是示意地顯示背面磨削步驟的側面圖。背面磨削步驟是以例如圖3及圖4所示之磨削裝置22所實施的。After the tape attaching step, a back grinding step of grinding the back surface 11b of the workpiece 11 to form the workpiece 11 to a predetermined thickness is performed. 3 is a perspective view schematically showing a back grinding step, and FIG. 4 is a side view schematically showing a back grinding step. The back grinding step is carried out, for example, by the grinding device 22 shown in Figures 3 and 4.
磨削裝置22具備有用於吸引、保持被加工物11的工作夾台24。工作夾台24是與馬達等的旋轉驅動源(圖未示)連結著，並繞著與鉛直方向大致平行的旋轉軸旋轉。又，工作夾台24的下方設置有工作台移動機構(圖未示)，工作夾台24是藉由此工作台移動機構而在水平方向上移動。The grinding device 22 is provided with a work chuck 24 for sucking and holding the workpiece 11. The work chuck 24 is coupled to a rotational drive source (not shown) such as a motor, and is rotated about a rotation axis substantially parallel to the vertical direction. Further, a table moving mechanism (not shown) is disposed below the work chuck 24, and the work chuck 24 is moved in the horizontal direction by the table moving mechanism.
工作夾台24之上表面的一部分是形成為吸引、保持已貼附於被加工物11之膠帶21的第2面21b側的保持面24a。在此保持面24a上，是通過形成於工作夾台24的內部的流路(圖未示)等使吸引源(圖未示)的負壓作用，而產生用於吸引膠帶21的吸引力。A part of the upper surface of the work chuck 24 is a holding surface 24a formed to attract and hold the second surface 21b side of the tape 21 attached to the workpiece 11. In the holding surface 24a, a suction force (not shown) formed in the inside of the work chuck 24 or the like causes a suction force (not shown) to act as a suction force for attracting the tape 21.
於工作夾台24的上方配置有磨削單元26。磨削單元26具備受到磨削單元升降機構(圖未示)所支持的主軸殼體(圖未示)。在主軸殼體中收容有主軸28，且在主軸28的下端部固定有圓盤狀的安裝座30。在此安裝座30的下表面裝設有與安裝座30大致相同直徑的磨削輪32。A grinding unit 26 is disposed above the work chuck 24 . The grinding unit 26 is provided with a spindle housing (not shown) supported by a grinding unit lifting mechanism (not shown). A spindle 28 is housed in the spindle housing, and a disk-shaped mount 30 is fixed to the lower end of the spindle 28. On the lower surface of the mount 30, a grinding wheel 32 having substantially the same diameter as the mount 30 is mounted.
磨削輪32具備有以不銹鋼、鋁等金屬材料所形成的輪基台34。在輪基台34的下表面，環狀地配置排列有複數個磨削磨石36。主軸28的上端側(基端側)是與馬達等之旋轉驅動源(圖未示)連接著，且磨削輪32是藉由從此旋轉驅動源所傳達的旋轉力，而繞著與鉛直方向大致平行的旋轉軸旋轉。The grinding wheel 32 is provided with a wheel base 34 formed of a metal material such as stainless steel or aluminum. On the lower surface of the wheel base 34, a plurality of grinding stones 36 are arranged in a ring shape. The upper end side (base end side) of the main shaft 28 is connected to a rotary drive source (not shown) such as a motor, and the grinding wheel 32 is rotated by the rotational force transmitted from the rotary drive source. The substantially parallel axis of rotation rotates.
在背面磨削步驟中，首先，會使貼附於被加工物11之膠帶21的第2面21b接觸於工作夾台24的保持面24a，並使吸引源的負壓作用。藉此，就能將被加工物11以背面11b側露出於上方的狀態吸引、保持在工作夾台24上。In the back grinding step, first, the second surface 21b of the tape 21 attached to the workpiece 11 is brought into contact with the holding surface 24a of the work chuck 24, and the negative pressure of the suction source acts. Thereby, the workpiece 11 can be sucked and held on the work chuck 24 with the back surface 11b side exposed upward.
接著，使工作夾台24移動至磨削輪32的下方。然後，如圖3及圖4所示，使工作夾台24及磨削輪32各自旋轉，並一邊供給純水等的磨削液一邊使主軸殼體(主軸28)下降。主軸殼體的下降量是調整成使磨削磨石36之下表面被推抵在被加工物11之背面11b的程度。Next, the work chuck 24 is moved to the lower side of the grinding wheel 32. Then, as shown in FIG. 3 and FIG. 4, the work chuck 24 and the grinding wheel 32 are each rotated, and the spindle housing (main spindle 28) is lowered while supplying a grinding fluid such as pure water. The amount of lowering of the spindle housing is adjusted such that the lower surface of the grinding stone 36 is pushed against the back surface 11b of the workpiece 11.
藉此，能夠磨削背面11b側而使被加工物11薄化。此背面磨削步驟是例如一邊測量被加工物11的厚度一邊進行。在被加工物11變薄至預定的(代表性地來說，是器件晶片的成品厚度)時，即結束背面磨削步驟。Thereby, the workpiece 11 can be thinned by grinding the back surface 11b side. This back grinding step is performed, for example, while measuring the thickness of the workpiece 11. When the workpiece 11 is thinned to a predetermined (representatively, the finished thickness of the device wafer), the back grinding step is ended.
在背面磨削步驟之後，實施改質層形成步驟，該改質層形成步驟是將對於被加工物11具有穿透性之波長的雷射光束照射、聚光於被加工物11，而在被加工物11的内部形成成為將被加工物11破斷之時的起點的改質層。圖5是示意地顯示改質層形成步驟的立體圖，圖6是示意地顯示改質層形成步驟的局部截面側視圖。改質層形成步驟是以例如圖5及圖6所示的雷射加工裝置42來實施的。After the back grinding step, a reforming layer forming step of irradiating and condensing the laser beam having a wavelength that is transparent to the workpiece 11 to the workpiece 11 is performed. The inside of the workpiece 11 forms a reforming layer which is a starting point when the workpiece 11 is broken. Fig. 5 is a perspective view schematically showing a step of forming a modified layer, and Fig. 6 is a partial cross-sectional side view schematically showing a step of forming a modified layer. The reforming layer forming step is carried out, for example, by the laser processing apparatus 42 shown in FIGS. 5 and 6.
雷射加工裝置42具備有用於吸引、保持被加工物11的工作夾台44。工作夾台44是與馬達等的旋轉驅動源(圖未示)連結著，並繞著與鉛直方向大致平行的旋轉軸旋轉。又，在工作夾台44的下方設置有工作台移動機構(圖未示)，工作夾台44是藉由此工作台移動機構而在水平方向上移動。The laser processing apparatus 42 is provided with a work chuck 44 for sucking and holding the workpiece 11. The work chuck 44 is coupled to a rotational drive source (not shown) such as a motor, and is rotated about a rotation axis substantially parallel to the vertical direction. Further, a table moving mechanism (not shown) is provided below the work chuck 44, and the work chuck 44 is moved in the horizontal direction by the table moving mechanism.
工作夾台44之上表面的一部分，是形成為吸引、保持已貼附於被加工物11的膠帶21之第2面21b側的保持面44a。在此保持面44a上，是通過形成於工作夾台44的內部的流路(圖未示)等使吸引源(圖未示)的負壓作用，而產生用於吸引膠帶21的吸引力。A part of the upper surface of the work chuck 44 is formed to attract and hold the holding surface 44a on the side of the second surface 21b of the tape 21 attached to the workpiece 11. On the holding surface 44a, a suction force (not shown) formed in the inside of the work chuck 44 or the like causes a suction force (not shown) to act as a suction force for attracting the tape 21.
在工作夾台44的上方配置有雷射照射單元46。在相鄰於雷射照射單元46的位置，設置有用於拍攝被加工物11的攝像單元48。雷射照射單元46會將以雷射振盪器(圖未示)所脈衝振盪產生的雷射光束L2照射、聚光於預定的位置。雷射振盪器是構成為能夠脈衝振盪產生對於被加工物11具有穿透性之波長(難以被吸收的波長)的雷射光束L2。A laser irradiation unit 46 is disposed above the work chuck 44. At a position adjacent to the laser irradiation unit 46, an image pickup unit 48 for photographing the workpiece 11 is provided. The laser irradiation unit 46 irradiates and condenses the laser beam L2 generated by the pulse oscillation of a laser oscillator (not shown) at a predetermined position. The laser oscillator is a laser beam L2 configured to be capable of pulsing to generate a wavelength (wavelength that is difficult to be absorbed) that is transparent to the workpiece 11.
在改質層形成步驟中，首先，是使已貼附於被加工物11之膠帶21的第2面21b接觸於工作夾台44的保持面44a，並使吸引源的負壓作用。藉此，就能將被加工物11以背面11b側露出於上方的狀態吸引、保持在工作夾台44上。In the reforming layer forming step, first, the second surface 21b of the tape 21 attached to the workpiece 11 is brought into contact with the holding surface 44a of the work chuck 44, and the negative pressure of the suction source acts. Thereby, the workpiece 11 can be sucked and held on the work chuck 44 in a state where the back surface 11b side is exposed upward.
其次，使保持有被加工物11之工作夾台44移動、旋轉，以將雷射照射單元46對準於加工對象之分割預定線13的端部。然後，從雷射照射單元46朝向被加工物11的背面11b照射雷射光束L2，並且使工作夾台44在與加工對象之分割預定線13平行的方向上移動。亦即，從被加工物11之背面11b側沿著分割預定線13照射雷射光束L2。Next, the working chuck 44 holding the workpiece 11 is moved and rotated to align the laser irradiation unit 46 to the end of the planned dividing line 13 of the processing target. Then, the laser beam L2 is irradiated from the laser irradiation unit 46 toward the back surface 11b of the workpiece 11, and the work chuck 44 is moved in a direction parallel to the planned dividing line 13 of the processing object. That is, the laser beam L2 is irradiated from the side of the back surface 11b of the workpiece 11 along the dividing line 13 to be divided.
此時，是先將雷射光束L2之聚光點的位置對準被加工物11的内部。藉此，將雷射光束L2的聚光點附近藉由多光子吸收而改質，而能夠形成沿著加工對象之分割預定線13的改質層(改質區域)17。當重複工作夾台44的移動、旋轉、及雷射光束L2的照射、聚光，而例如沿全部的分割預定線13都形成改質層17時，即結束改質層形成步驟。At this time, the position of the light collecting point of the laser beam L2 is first aligned with the inside of the workpiece 11. Thereby, the vicinity of the condensed point of the laser beam L2 is modified by multiphoton absorption, and the modified layer (modified region) 17 along the planned dividing line 13 to be processed can be formed. When the movement of the work chuck 44, the rotation, and the irradiation and concentrating of the laser beam L2 are repeated, for example, the reforming layer 17 is formed along all of the planned dividing lines 13, the reforming layer forming step is ended.
再者，當在此改質層形成步驟中對被加工物11照射、聚光雷射光束L2時，會使被加工物11在雷射光束L2的聚光點附近膨脹，而在正面11a及背面11b之對應於改質層17的位置形成無法目視程度之微細的凸部(代表性地來說，為次微米單位)。亦即，會在與於被加工物11的内部形成改質層17之時間點大致相同的時間點上形成凸部，且已結束改質層形成步驟的狀態下，使對應於改質層17之微細的凹凸存在於被加工物11的正面11a及背面11b。Further, when the workpiece 11 is irradiated and the laser beam L2 is condensed in the reforming layer forming step, the workpiece 11 is caused to expand near the condensing point of the laser beam L2, and on the front surface 11a and The position of the back surface 11b corresponding to the modified layer 17 forms a fine convex portion (representatively, a submicron unit) which is invisible to a degree of visibility. In other words, the convex portion is formed at substantially the same time point as the time at which the modified layer 17 is formed inside the workpiece 11, and the reforming layer forming step is completed to correspond to the modified layer 17 The fine unevenness is present on the front surface 11a and the back surface 11b of the workpiece 11.
在本實施形態之被加工物的檢查方法中，會利用此凹凸來判定改質層17的狀態。具體來說，在改質層形成步驟之後，實施攝像步驟，該攝像步驟是使光L1在被加工物11上反射來形成強調了凹凸的投影像，並且以攝像單元12拍攝投影像並形成圖像。In the inspection method of the workpiece according to the embodiment, the state of the modified layer 17 is determined by the unevenness. Specifically, after the reforming layer forming step, an imaging step is performed in which the light L1 is reflected on the workpiece 11 to form a projection image in which the unevenness is emphasized, and the projection image is captured by the imaging unit 12 and the image is formed. image.
攝像步驟是以上述的檢查裝置2所實施的。首先，將被加工物11載置於保持台4上。具體來說，如圖1所示，使已貼附於被加工物11之膠帶21的第2面21b接觸於保持台4的保持面4a。藉此，就能將被加工物11以背面11b側露出於上方的狀態來保持於保持台4。The imaging step is performed by the above-described inspection device 2. First, the workpiece 11 is placed on the holding table 4. Specifically, as shown in FIG. 1 , the second surface 21 b of the tape 21 attached to the workpiece 11 is brought into contact with the holding surface 4 a of the holding table 4 . Thereby, the workpiece 11 can be held by the holding table 4 in a state where the workpiece 11 is exposed to the upper side.
接著，如圖1所示，從光源6放射光L1。光源6是以能夠對於藉由保持台4所保持之被加工物11的整體照射光L1的態樣(位置、方向等)來設計的。據此，以將從光源6所放射的光L1在被加工物11的背面11b反射。Next, as shown in FIG. 1, light L1 is emitted from the light source 6. The light source 6 is designed in such a manner (position, direction, and the like) that the entire surface of the workpiece 11 held by the holding table 4 is irradiated with the light L1. Thereby, the light L1 radiated from the light source 6 is reflected on the back surface 11b of the workpiece 11.
又，在被加工物11上反射之光L1的路徑上配置有投影面8。因此，在被加工物11的背面11b反射之光L1會照射於投影面8，而形成對應於被加工物11的背面11b之狀態的投影像。圖7是顯示在被加工物11上形成有適當的改質層17之時的投影像之例的圖。Further, a projection surface 8 is disposed on the path of the light L1 reflected on the workpiece 11. Therefore, the light L1 reflected on the back surface 11b of the workpiece 11 is irradiated onto the projection surface 8, and a projection image corresponding to the state of the back surface 11b of the workpiece 11 is formed. FIG. 7 is a view showing an example of a projection image when an appropriate modified layer 17 is formed on the workpiece 11.
被加工物11的背面11b，是將由改質層17所造成之微細的凸部除外而為大致平坦的。也就是，照射於將背面11b的凸部除外之區域的光L1即使在背面11b的反射後也幾乎不擴散。另一方面，照射於背面11b之凸部的光L1，會因凸部之凸面鏡的形式的功能而擴散。The back surface 11b of the workpiece 11 is substantially flat except for the fine convex portion caused by the modified layer 17. That is, the light L1 irradiated to the region excluding the convex portion of the back surface 11b hardly diffuses even after the reflection on the back surface 11b. On the other hand, the light L1 that is incident on the convex portion of the back surface 11b is diffused by the function of the convex mirror in the form of a convex mirror.
因此，當將在被加工物11的背面11b所反射之光L1照射於投影面8時，能得到如圖7所示的投影像31。在此投影像31中，是強調對應於改質層17的凹凸而形成陰影33。之後，以攝像單元10拍攝投影像31，而形成包含投影像31之資訊的圖像。當將藉由攝像單元10所形成的圖像傳送至判定單元12時，即結束攝像步驟。Therefore, when the light L1 reflected on the back surface 11b of the workpiece 11 is irradiated onto the projection surface 8, the projection image 31 shown in Fig. 7 can be obtained. In the projection image 31, the shadow 33 corresponding to the unevenness of the modified layer 17 is emphasized. Thereafter, the projection image 31 is imaged by the imaging unit 10, and an image including the information of the projection image 31 is formed. When the image formed by the image pickup unit 10 is transmitted to the determination unit 12, the image pickup step is ended.
在攝像步驟之後，實施判定步驟，該判定步驟是將以攝像單元10所形成的圖像，與預先設定的條件進行比較來判定改質層17的狀態。如圖7所示，在形成有適合於被加工物11之破斷的改質層17時，會使例如對應於改質層17所形成之陰影33的寬度也變粗。After the imaging step, a determination step of determining the state of the modified layer 17 by comparing the image formed by the imaging unit 10 with a predetermined condition is performed. As shown in FIG. 7, when the modified layer 17 suitable for the breakage of the workpiece 11 is formed, for example, the width of the shadow 33 formed corresponding to the modified layer 17 is also made thick.
因此，藉由將此陰影33的寬度以圖像處理等來檢測，並與預先設定之基準的寬度(基準値、條件)進行比較，便能夠判定是否形成有適當的改質層17。具體來說，例如，在陰影33的寬度為基準値以上時，判定單元12會判定為形成有適當的改質層17。另一方面，在陰影33的寬度比基準値更狹窄時，判定單元12會判定為未形成有適當的改質層17。Therefore, by detecting the width of the shadow 33 by image processing or the like and comparing it with the width (reference 値, condition) of the reference base set in advance, it is possible to determine whether or not the appropriate modified layer 17 is formed. Specifically, for example, when the width of the shadow 33 is equal to or greater than the reference ,, the determination unit 12 determines that the appropriate modified layer 17 is formed. On the other hand, when the width of the shadow 33 is narrower than the reference 値, the determination unit 12 determines that the appropriate modified layer 17 is not formed.
再者，將藉由攝像單元10所形成之圖像内的區域區劃成複數個微小的區域(微笑區域)，並將在各微小區域内所檢測到的陰影33的寬度與基準値比較，藉此，便能夠判定在各微小區域中是否形成有適當的改質層17。又，使用此此方法，也能夠特定出未形成有適當的改質層17之不良區域的位置。Furthermore, the area in the image formed by the image capturing unit 10 is divided into a plurality of minute areas (smile areas), and the width of the shadow 33 detected in each minute area is compared with the reference point, Thus, it can be determined whether or not an appropriate reforming layer 17 is formed in each of the minute regions. Moreover, by using this method, it is also possible to specify the position where the defective region of the appropriate modified layer 17 is not formed.
圖8是顯示在被加工物11上未形成有適當之改質層17時的投影像31之例的圖。如圖8所示，在未形成有適當的改質層17時，在投影像31中會存在陰影33的寬度比基準値更狹窄的不良區域35a、35b、35c、35d。可以藉由判定在各微小區域中是否形成有適當的改質層17之上述的方法，以特定此不良區域35a、35b、35c、35d的位置。FIG. 8 is a view showing an example of the projection image 31 when the appropriate modified layer 17 is not formed on the workpiece 11. As shown in FIG. 8, when the appropriate reforming layer 17 is not formed, there are defective regions 35a, 35b, 35c, and 35d in which the width of the shadow 33 is narrower than the reference 値 in the projected image 31. The position of the defective regions 35a, 35b, 35c, 35d can be specified by the above-described method of determining whether or not the appropriate modified layer 17 is formed in each of the minute regions.
在被加工物11中發現到不良區域35a、35b、35c、35d時，亦可例如再次實施改質層形成步驟，而在不良區域35a、35b、35c、35d形成改質層17。又，為了能夠防止之後的加工不良，亦可以變更改質層形成步驟的加工條件。When the defective regions 35a, 35b, 35c, and 35d are found in the workpiece 11, the modified layer forming step may be performed again, and the modified layer 17 may be formed in the defective regions 35a, 35b, 35c, and 35d. Further, in order to prevent subsequent processing failure, the processing conditions of the mass layer forming step may be changed.
如以上所述，在本實施形態之被加工物的檢查方法中，由於是藉由使從光源6所放射的光L1在產生有對應於改質層17之微細的凹凸之被加工物11的背面11b反射來照射於投影面8，以形成強調了面内之凹凸的投影像31，並且依據拍攝此投影像31所形成的圖像來判定改質層17的狀態，所以能夠依據包含強調了對應於改質層17之凹凸的圖像，適當且輕易地判定改質層17的狀態。As described above, in the inspection method of the workpiece according to the present embodiment, the workpiece L 11 having the fine unevenness corresponding to the modified layer 17 is generated by the light L1 emitted from the light source 6. The back surface 11b is reflected and irradiated onto the projection surface 8 to form a projection image 31 in which the unevenness in the plane is emphasized, and the state of the modified layer 17 is determined based on the image formed by capturing the projection image 31, so that it can be emphasized according to the inclusion. The state of the modified layer 17 is appropriately and easily determined corresponding to the image of the unevenness of the modified layer 17.
又，由於本實施形態之檢查裝置2具備：光源6，對被加工物11的背面(露出之面)11b照射光L1；投影面8，藉由投影已在被加工物11上被反射之來自光源6的光L1，以形成強調了面内之凹凸的投影像31；攝像單元(攝像設備)10，拍攝投影於投影面8的投影像31並形成圖像；及判定單元(判定設備)12，將所形成的圖像，與預先設定的條件進行比較來判定改質層17的狀態，所以能夠實施上述之被加工物的檢查方法，並適當且輕易地判定改質層17的狀態。Further, the inspection apparatus 2 of the present embodiment includes the light source 6, and the light L1 is irradiated to the back surface (the exposed surface) 11b of the workpiece 11; the projection surface 8 is projected from the workpiece 11 by the projection. The light L1 of the light source 6 forms a projection image 31 that emphasizes the unevenness in the plane; the imaging unit (imaging device) 10 captures the projection image 31 projected on the projection surface 8 and forms an image; and the determination unit (determination device) 12 Since the formed image is compared with a predetermined condition to determine the state of the modified layer 17, the above-described method of inspecting the workpiece can be performed, and the state of the modified layer 17 can be appropriately and easily determined.
再者，本發明並不限定於上述實施形態之記載，可作各種變更而實施。例如，亦可將上述實施形態之檢查裝置2組入雷射加工裝置中。圖9是示意地顯示組入有檢查裝置2的雷射加工裝置之構成例的立體圖。如圖9所示，雷射加工裝置102具備有支持各構造之基台104。在基台104的端部，設置有在Z軸方向(鉛直方向、高度方向)上延伸的支持構造106。Furthermore, the present invention is not limited to the description of the above embodiments, and can be implemented in various modifications. For example, the inspection apparatus 2 of the above embodiment may be incorporated in a laser processing apparatus. FIG. 9 is a perspective view schematically showing a configuration example of a laser processing apparatus incorporating the inspection apparatus 2. As shown in FIG. 9, the laser processing apparatus 102 is provided with the base 104 which supports each structure. At the end of the base 104, a support structure 106 extending in the Z-axis direction (vertical direction, height direction) is provided.
在遠離支持構造106之基台104的角部，設置有朝上方突出的突出部104a。突出部104a的內部形成有空間，在此空間中設置有可升降的片匣升降機108。在片匣升降機108的上表面，載置有可收容複數個被加工物11的片匣110。At a corner portion of the base 104 remote from the support structure 106, a protruding portion 104a that protrudes upward is provided. A space is formed inside the protruding portion 104a, and a stackable lifter 108 is provided in the space. On the upper surface of the cassette elevator 108, a cassette 110 that can accommodate a plurality of workpieces 11 is placed.
在接近於突出部104a的位置上，設置有用於暫置上述之被加工物11的暫置機構112。暫置機構112包含例如維持著與Y軸方向(分度進給方向)平行的狀態而相接近、相遠離的一對導軌112a、112b。At a position close to the protruding portion 104a, a temporary mechanism 112 for temporarily placing the above-described workpiece 11 is provided. The temporary mechanism 112 includes, for example, a pair of guide rails 112a and 112b that are close to each other and are separated from each other in a state parallel to the Y-axis direction (index feeding direction).
各導軌112a、112b具備支持被加工物11(環狀的框架)的支持面、及與支持面大致垂直的側面，且會藉由搬送機構(圖未示)將從片匣110拉出的被加工物11(環狀的框架)在X軸方向(加工進給方向)上挾入來對準於預定的位置。Each of the guide rails 112a and 112b includes a support surface for supporting the workpiece 11 (annular frame) and a side surface substantially perpendicular to the support surface, and is pulled out from the cassette 110 by a transport mechanism (not shown). The workpiece 11 (annular frame) is inserted in the X-axis direction (machining feed direction) to be aligned with a predetermined position.
在基台104的中央設置有移動機構(加工進給機構、分度進給機構)116。移動機構116具備有配置在基台104之上表面且平行於Y軸方向的一對Y軸導軌118。在Y軸導軌118上，可滑動地安裝有Y軸移動台120。A moving mechanism (machining feed mechanism, indexing feed mechanism) 116 is provided at the center of the base 104. The moving mechanism 116 is provided with a pair of Y-axis guide rails 118 disposed on the upper surface of the base 104 and parallel to the Y-axis direction. A Y-axis moving stage 120 is slidably mounted on the Y-axis guide 118.
在Y軸移動台120之背面側(下表面側)，設置有螺帽部(圖未示)，且在此螺帽部螺合有與Y軸導軌118平行之Y軸滾珠螺桿122。在Y軸滾珠螺桿122之一端部，連結有Y軸脈衝馬達124。只要以Y軸脈衝馬達124使Y軸滾珠螺桿122旋轉，Y軸移動台120即可沿著Y軸導軌118在Y軸方向上移動。A nut portion (not shown) is provided on the back side (lower surface side) of the Y-axis moving table 120, and a Y-axis ball screw 122 parallel to the Y-axis guide rail 118 is screwed into the nut portion. A Y-axis pulse motor 124 is coupled to one end of the Y-axis ball screw 122. When the Y-axis ball screw 122 is rotated by the Y-axis pulse motor 124, the Y-axis moving table 120 can be moved in the Y-axis direction along the Y-axis guide 118.
在Y軸移動台120的正面(上表面)設置有平行於X軸方向的一對X軸導軌126。在X軸導軌126上，可滑動地安裝有X軸移動台128。A pair of X-axis guide rails 126 parallel to the X-axis direction are provided on the front surface (upper surface) of the Y-axis moving table 120. An X-axis moving stage 128 is slidably mounted on the X-axis guide 126.
在X軸移動台128之背面側(下表面側)設置有螺帽部(圖未示)，且在此螺帽部螺合有平行於X軸導軌126之X軸滾珠螺桿130。在X軸滾珠螺桿130的一端部，連結有X軸脈衝馬達(圖未示)。只要以X軸脈衝馬達使X軸滾珠螺桿130旋轉，X軸移動台128即可沿著X軸導軌126在X軸方向上移動。A nut portion (not shown) is provided on the back side (lower surface side) of the X-axis moving table 128, and an X-axis ball screw 130 parallel to the X-axis rail 126 is screwed to the nut portion. An X-axis pulse motor (not shown) is coupled to one end of the X-axis ball screw 130. As long as the X-axis ball screw 130 is rotated by the X-axis pulse motor, the X-axis moving table 128 can move in the X-axis direction along the X-axis guide 126.
在X軸移動台128之正面側(上表面側)設置有工作台基座132。在工作台基座132的上部，配置有用於吸引、保持被加工物11的工作夾台(保持台)134。在工作夾台134的周圍，設置有從四方來將支持被加工物11的環狀之框架固定的4個夾具136。A table base 132 is provided on the front side (upper surface side) of the X-axis moving table 128. A work chuck (holding stage) 134 for sucking and holding the workpiece 11 is disposed on the upper portion of the table base 132. Around the work chuck 134, four jigs 136 that fix the annular frame that supports the workpiece 11 from four sides are provided.
工作夾台134是與馬達等的旋轉驅動源(圖未示)連結著，並繞著與Z軸方向(鉛直方向、高度方向)大致平行的旋轉軸旋轉。只要藉由上述移動機構116使X軸移動台128在X軸方向上移動，即可將工作夾台134在X軸方向上加工進給。又，只要藉由移動機構116使Y軸移動台120在Y軸方向上移動，即可將工作夾台134在Y軸方向上分度進給。The work chuck 134 is coupled to a rotational drive source (not shown) such as a motor, and rotates about a rotation axis substantially parallel to the Z-axis direction (vertical direction, height direction). As long as the X-axis moving table 128 is moved in the X-axis direction by the moving mechanism 116, the work chuck 134 can be processed and fed in the X-axis direction. Further, if the Y-axis moving table 120 is moved in the Y-axis direction by the moving mechanism 116, the work chuck 134 can be indexed in the Y-axis direction.
工作夾台134的上表面是形成為保持被加工物11的保持面134a。此保持面134a是相對於X軸方向及Y軸方向大致平行地形成，並且，通過形成於工作夾台134及工作台基座132的內部之流路(圖未示)等而與吸引源(圖未示)連接。The upper surface of the work chuck 134 is a holding surface 134a formed to hold the workpiece 11. The holding surface 134a is formed substantially in parallel with respect to the X-axis direction and the Y-axis direction, and is connected to the suction source by a flow path (not shown) formed inside the work chuck 134 and the table base 132. Figure not shown) connection.
在支持構造106中，設置有朝向基台104之中央側突出的支持臂106a，且於此支持臂106a的前端部配置有朝向下方照射雷射光束的雷射照射單元138。又，相鄰於雷射照射單元138的位置上，設置有拍攝被加工物11的攝像單元140。In the support structure 106, a support arm 106a that protrudes toward the center side of the base 104 is provided, and a front end portion of the support arm 106a is provided with a laser irradiation unit 138 that irradiates a laser beam downward. Further, an imaging unit 140 that images the workpiece 11 is provided adjacent to the position of the laser irradiation unit 138.
雷射照射單元138具備有脈衝振盪產生對被加工物11具有穿透性之波長的雷射光束的雷射振盪器(圖未示)。例如，想要在以矽等之半導體材料所形成的被加工物11上形成改質層17時，能夠使用具備有脈衝振盪產生波長為1064nm之雷射光束的Nd：YAG等之雷射媒介物的雷射振盪器。The laser irradiation unit 138 is provided with a laser oscillator (not shown) that pulsates a laser beam that generates a wavelength that is transparent to the workpiece 11. For example, when it is desired to form the reforming layer 17 on the workpiece 11 formed of a semiconductor material such as tantalum, a laser medium including Nd:YAG having a laser beam having a wavelength of 1064 nm generated by pulse oscillation can be used. Laser oscillator.
又，雷射照射單元138具備有可將從雷射振盪器所脈衝振盪產生之雷射光束聚光的聚光器(圖未示)，且會對於被工作夾台134所保持的被加工物11等照射、聚光此雷射光束。藉由以雷射照射單元138來照射雷射光束，並且使工作夾台134在X軸方向上加工進給，能夠對被加工物11沿X軸方向進行雷射加工(改質)。Further, the laser irradiation unit 138 is provided with a concentrator (not shown) that can condense the laser beam generated by the pulse oscillation of the laser oscillator, and the workpiece to be held by the working chuck 134 11 etc. illuminate and concentrate the laser beam. By irradiating the laser beam with the laser irradiation unit 138 and feeding the work chuck 134 in the X-axis direction, the workpiece 11 can be laser-processed (modified) in the X-axis direction.
可將加工後的被加工物11搬送至例如相鄰於暫置機構112之檢查裝置2的保持台4。在支持構造106的保持台4側，形成有投影面8。再者，在圖9中，省略了檢查裝置2之構成的一部分。以檢查裝置2檢查過的被加工物11是以例如搬送機構來載置於暫置機構112，而收容到片匣110。The processed workpiece 11 can be transported to, for example, the holding table 4 adjacent to the inspection device 2 of the temporary mechanism 112. On the holding table 4 side of the support structure 106, a projection surface 8 is formed. In addition, in FIG. 9, a part of the structure of the inspection apparatus 2 is abbreviate|omitted. The workpiece 11 inspected by the inspection device 2 is placed on the temporary mechanism 112 by, for example, a transport mechanism, and is accommodated in the cassette 110.
搬送機構、移動機構116、工作夾台134、雷射照射單元138、攝像單元140等的構成要素，各自與控制單元(控制設備)142相連接。此控制單元142會配合被加工物11的加工所需之一連串的工序，控制上述的各構成要素。The components of the transport mechanism, the moving mechanism 116, the work chuck 134, the laser irradiation unit 138, the imaging unit 140, and the like are each connected to a control unit (control device) 142. The control unit 142 controls the above-described respective components in accordance with a series of processes required for processing the workpiece 11.
再者，亦可使雷射加工裝置102的工作夾台134具備作為檢查裝置2之保持台4的功能。如此，藉由將工作夾台134作為保持台4來使用，即能夠省略保持台4。此時，是成為將光源6、投影面8、攝像單元(攝像設備)10等配合工作夾台134來配置。同樣地，亦可使控制單元142具備作為檢查裝置2之判定單元12的功能。此時，能夠省略判定單元12。Further, the work chuck 134 of the laser processing apparatus 102 may be provided with a function as the holding table 4 of the inspection apparatus 2. As described above, by using the work chuck 134 as the holding table 4, the holding table 4 can be omitted. At this time, the light source 6, the projection surface 8, the imaging unit (imaging device) 10, and the like are placed in cooperation with the operation table 134. Similarly, the control unit 142 may be provided with the function as the determination unit 12 of the inspection device 2. At this time, the determination unit 12 can be omitted.
又，亦可將上述實施形態之檢查裝置2組入用於擴張膠帶(切割膠帶)的擴張裝置中。圖10之(A)及圖10之(B)是示意地顯示組入有檢查裝置2之擴張裝置的構成例及使用此擴張裝置之擴張分割步驟的局部截面側視圖。再者，在使用此擴張裝置時，在上述之膠帶貼附步驟(切割膠帶貼附步驟)等中，會將直徑比被加工物11更大的膠帶41貼附於被加工物11，且將環狀的框架43預先固定於膠帶41的外周部分。Further, the inspection device 2 of the above embodiment may be incorporated into an expansion device for expanding an adhesive tape (cut tape). FIGS. 10(A) and 10(B) are schematic partial cross-sectional side views showing a configuration example of an expansion device incorporating the inspection device 2 and an expansion division step using the expansion device. Further, when the expansion device is used, in the above-described tape attaching step (cut tape attaching step) or the like, the tape 41 having a larger diameter than the workpiece 11 is attached to the workpiece 11 and The annular frame 43 is fixed to the outer peripheral portion of the tape 41 in advance.
如圖10之(A)及圖10之(B)所示，擴張裝置52具備有隔著膠帶41及框架43從側邊支持被加工物11的支持構造(保持台)54、及隔著膠帶41從下方支持被加工物11之圓筒狀的擴張滾筒(支持基台、保持台)56。例如，擴張滾筒56的內徑比被加工物11的直徑更大，且擴張滾筒56的外徑比固定於膠帶41之框架43的內徑更小。As shown in FIG. 10(A) and FIG. 10(B), the expansion device 52 is provided with a support structure (holding table) 54 for supporting the workpiece 11 from the side via the tape 41 and the frame 43, and a tape interposed therebetween. A cylindrical expansion drum (support base, holding table) 56 that supports the workpiece 11 from below. For example, the inner diameter of the expansion drum 56 is larger than the diameter of the workpiece 11, and the outer diameter of the expansion drum 56 is smaller than the inner diameter of the frame 43 fixed to the tape 41.
支持構造54包含支持框架41的框架支持台58。此框架支持台58的上表面是形成為支持固定於膠帶41的外周部分之框架43的支持面。在框架支持台58的外周部分，設置有用於固定框架41的複數個夾具60。The support structure 54 includes a frame support 58 that supports the frame 41. The upper surface of the frame support table 58 is a support surface formed to support the frame 43 fixed to the outer peripheral portion of the tape 41. In the outer peripheral portion of the frame support table 58, a plurality of jigs 60 for fixing the frame 41 are provided.
在支持構造54的下方設置有升降機構(擴張設備)62。升降機構62具備有被固定在下方的基台(圖未示)上之汽缸罩殼64、與插入於汽缸罩殼64的活塞桿66。在活塞桿66的上端部固定有框架支持台58。A lifting mechanism (expansion device) 62 is provided below the support structure 54. The elevating mechanism 62 includes a cylinder cover 64 that is fixed to a lower base (not shown), and a piston rod 66 that is inserted into the cylinder cover 64. A frame support base 58 is fixed to the upper end portion of the piston rod 66.
此升降機構62會使支持構造54升降成使框架支持台58的上表面(支持面)在基準位置及擴張位置之間移動，該基準位置是與擴張滾筒56的上端等高之位置，該擴張位置是比擴張滾筒56的上端更下方的位置。升降機構62的動作是藉由例如連接於升降機構62的控制單元(控制設備)68而被控制。The lifting mechanism 62 raises and lowers the support structure 54 such that the upper surface (support surface) of the frame support table 58 moves between a reference position and a position of expansion which is equal to the upper end of the expansion drum 56, the expansion The position is a position lower than the upper end of the expansion drum 56. The operation of the elevating mechanism 62 is controlled by, for example, a control unit (control device) 68 connected to the elevating mechanism 62.
在支持構造54及擴張滾筒56的上方，配置有構成檢查裝置2之光源6、投影面8、及攝像單元(攝像設備)10等。再者，此擴張裝置52的支持構造54與擴張滾筒56，是作為檢查裝置2的保持台4而發揮功能。當然，亦可有別於支持構造54與擴張滾筒56，另外設置保持台4。Above the support structure 54 and the expansion drum 56, a light source 6, a projection surface 8, and an imaging unit (imaging device) 10 constituting the inspection device 2 are disposed. Further, the support structure 54 of the expansion device 52 and the expansion drum 56 function as the holding table 4 of the inspection device 2. Of course, the support structure 54 and the expansion drum 56 may be different, and the holding table 4 may be additionally provided.
在實施擴張膠帶41來分割被加工物11的擴張分割步驟之時，首先，如圖10之(A)所示，是將框架43載置於已移動至基準位置之框架支持台58的上表面，且以夾具60固定此框架43。藉此，擴張滾筒56的上端是在被加工物11與框架43之間接觸於膠帶41。At the time of implementing the expansion tape 41 to divide the expansion and division step of the workpiece 11, first, as shown in FIG. 10(A), the frame 43 is placed on the upper surface of the frame support table 58 that has been moved to the reference position. And the frame 43 is fixed by the jig 60. Thereby, the upper end of the expansion drum 56 is in contact with the tape 41 between the workpiece 11 and the frame 43.
接著，以升降機構62使支持構造54下降，如圖10之(B)所示，使框架支持台58的上表面移動到比擴張滾筒56的上端更下方的擴張位置。其結果為，擴張滾筒56會相對於框架支持台58上升，且膠帶41是形成為被擴張滾筒56上推成放射狀地被擴張。Next, the support structure 54 is lowered by the elevating mechanism 62, and as shown in FIG. 10(B), the upper surface of the frame support base 58 is moved to an expanded position lower than the upper end of the expansion drum 56. As a result, the expansion drum 56 rises relative to the frame support base 58, and the tape 41 is formed to be radially expanded by the expansion drum 56.
當擴張膠帶41時，在被加工物11上會被賦與將膠帶41擴張之方向的力(放射狀的力)。藉此，被加工物11會以改質層17作為破斷的起點而被分割成複數個晶片，另外，也會擴大相鄰之晶片間的間隔。在此擴張分割步驟的前後，宜例如實施上述的攝像步驟，以檢查被加工物11。When the tape 41 is expanded, a force (radial force) in the direction in which the tape 41 is expanded is imparted to the workpiece 11. Thereby, the workpiece 11 is divided into a plurality of wafers by using the modified layer 17 as a starting point of the breaking, and the interval between adjacent wafers is also increased. Before and after the expansion and division step, it is preferable to carry out the above-described image pickup step, for example, to inspect the workpiece 11.
圖11是顯示擴張分割步驟之後的投影像之例的圖。當在擴張分割步驟中將被加工物11分割成複數個晶片，且擴大相隣之晶片彼此的間隔時，陰影33的寬度也會變寬。又，由於在以改質層17為起點而分割成的晶片中，殘留有在被加工物11的磨削時產生的應力(内部應力)，所以晶片會藉由此應力而成為稍微彎曲的狀態。藉此，會將放射到晶片上的光L1稍微地聚光，而能夠得到包含更加強調了晶片彼此的間隔之陰影33的投影像。Fig. 11 is a view showing an example of a projection image after the expansion division step. When the workpiece 11 is divided into a plurality of wafers in the expansion and division step, and the interval between adjacent wafers is enlarged, the width of the shadows 33 is also widened. In addition, since the stress (internal stress) generated during the grinding of the workpiece 11 remains in the wafer divided by the modified layer 17 as a starting point, the wafer is slightly bent by the stress. . Thereby, the light L1 radiated onto the wafer is slightly condensed, and a projection image including the shadow 33 which further emphasizes the interval between the wafers can be obtained.
因此，藉由將此陰影33的寬度藉由圖像處理等來檢測，並與預先設定之基準的寬度(基準値、條件)進行比較，便能夠確實地判定是否適當地分割被加工物11、晶片彼此的間隔是否適當等。再者，在未實施磨削被加工物11之背面11b的磨削步驟的情況下，會成為在形成器件15等的圖案之時產生的應力(内部應力)殘留於被加工物11的狀態。藉由以此應力所造成之晶片的彎曲，能夠得到與強調陰影33同樣的效果。Therefore, by detecting the width of the shadow 33 by image processing or the like and comparing it with the width (reference 値, condition) of the preset reference, it is possible to surely determine whether or not the workpiece 11 is appropriately divided. Whether the intervals of the wafers are appropriate or the like. In addition, when the grinding step of grinding the back surface 11b of the workpiece 11 is not performed, the stress (internal stress) generated when the pattern of the device 15 or the like is formed remains in the state of the workpiece 11. By the bending of the wafer by the stress, the same effect as the emphasized shadow 33 can be obtained.
再者，亦可與擴張分割步驟並行(同時)地實施攝像步驟。例如，藉由使用能夠高速攝影的攝影機作為攝像單元6，而拍攝擴張分割步驟中的投影像31，即能夠確認破斷的進行狀況。並且，藉由依據此確認的結果來設定擴張膠帶41時的速度與擴張的方向、膠帶41的種類等，以變得能夠更確實地分割被加工物11。Furthermore, the imaging step can also be carried out in parallel (simultaneously) with the expansion division step. For example, by using a camera capable of high-speed photography as the imaging unit 6, the projection image 31 in the expansion and division step is imaged, that is, the progress of the break can be confirmed. In addition, the speed at which the tape 41 is expanded, the direction of expansion, the type of the tape 41, and the like are set in accordance with the result of the confirmation, so that the workpiece 11 can be more reliably divided.
又，亦可使控制單元68具備有作為檢查裝置2之判定單元12的功能。此時，能夠省略判定單元12。Further, the control unit 68 may be provided with a function as the determination unit 12 of the inspection device 2. At this time, the determination unit 12 can be omitted.
再者，在上述實施形態中，雖然是在改質層形成步驟之前實施背面磨削步驟，但也能夠省略背面磨削步驟等。又，亦可在改質層形成步驟之後實施背面磨削步驟。又，在上述實施形態中，雖然是使被加工物11的背面11b露出，但在使被加工物11的正面11a露出的情況下也能夠以同樣的方法檢查被加工物11。Further, in the above embodiment, the back grinding step is performed before the reforming layer forming step, but the back grinding step or the like may be omitted. Further, the back grinding step may be performed after the reforming layer forming step. Moreover, in the above-described embodiment, the back surface 11b of the workpiece 11 is exposed. However, when the front surface 11a of the workpiece 11 is exposed, the workpiece 11 can be inspected in the same manner.
另外，上述實施形態之構造、方法等，只要在不脫離本發明的目的之範圍下，均可適當變更而實施。In addition, the structure, the method, and the like of the above-described embodiments can be appropriately modified and implemented without departing from the scope of the invention.
11‧‧‧被加工物
11a‧‧‧正面
11b‧‧‧背面
13‧‧‧分割預定線(切割道)
15‧‧‧器件
17‧‧‧改質層(改質區域)
21‧‧‧膠帶(切割膠帶)
21a‧‧‧第1面
21b‧‧‧第2面
31‧‧‧投影像
33‧‧‧陰影
35a、35b、35c、35d‧‧‧不良區域
41‧‧‧膠帶(切割膠帶)
43‧‧‧框架
2‧‧‧檢查裝置
4‧‧‧保持台
4a、24a、44a、134a‧‧‧保持面
6‧‧‧光源
8‧‧‧投影面
10‧‧‧攝像單元(攝像設備)
12‧‧‧判定單元(判定設備)
22‧‧‧磨削裝置
24、44‧‧‧工作夾台
26‧‧‧磨削設備
28‧‧‧主軸
30‧‧‧安裝座
32‧‧‧磨削輪
34‧‧‧輪基台
36‧‧‧磨削磨石
42‧‧‧雷射加工裝置
46、138‧‧‧雷射照射單元
48、140‧‧‧攝像單元
52‧‧‧擴張裝置
54‧‧‧支持構造(保持台)
56‧‧‧擴張滾筒(支持基台、保持台)
58‧‧‧框架支持台
60、136‧‧‧夾具
62‧‧‧升降機構(擴張設備)
64‧‧‧汽缸罩殼
66‧‧‧活塞桿
68、142‧‧‧控制單元(控制設備)
102‧‧‧雷射加工裝置
104‧‧‧基台
104a‧‧‧突出部
106‧‧‧支持構造
106a‧‧‧支持臂
108‧‧‧片匣升降機
110‧‧‧片匣
112‧‧‧暫置機構
112a、112b‧‧‧導軌
116‧‧‧移動機構(加工進給機構、分度進給機構)
118‧‧‧Y軸導軌
120‧‧‧Y軸移動台
122‧‧‧Y軸滾珠螺桿
124‧‧‧Y軸脈衝馬達
126‧‧‧X軸導軌
128‧‧‧X軸移動台
130‧‧‧X軸滾珠螺桿
132‧‧‧工作台基座
134‧‧‧工作夾台(保持台)
L1‧‧‧光
L2‧‧‧雷射光束
X、Y、Z‧‧‧方向11‧‧‧Processed objects
11a‧‧‧ positive
11b‧‧‧Back
13‧‧‧Spched line (cutting lane)
15‧‧‧Device
17‧‧‧Modified layer (modified area)
21‧‧‧ Tape (cut tape)
21a‧‧‧1st
21b‧‧‧2nd
31‧‧‧Project image
33‧‧‧ Shadow
35a, 35b, 35c, 35d‧‧‧ bad areas
41‧‧‧ Tape (cut tape)
43‧‧‧Frame
2‧‧‧Checking device
4‧‧‧ Keeping the table
4a, 24a, 44a, 134a‧‧‧
6‧‧‧Light source
8‧‧‧Projection surface
10‧‧‧ Camera unit (camera equipment)
12‧‧‧Determining unit (judging device)
22‧‧‧ grinding device
24, 44‧‧‧Working table
26‧‧‧ grinding equipment
28‧‧‧ Spindle
30‧‧‧ Mounting
32‧‧‧ grinding wheel
34‧‧‧ wheel abutment
36‧‧‧ grinding grinding stone
42‧‧‧ Laser processing equipment
46, 138‧‧ ‧ laser irradiation unit
48, 140‧‧‧ camera unit
52‧‧‧Expansion device
54‧‧‧Support structure (holding table)
56‧‧‧Expansion roller (supporting abutment, holding table)
58‧‧‧Frame Support Desk
60, 136‧‧ ‧ fixture
62‧‧‧ Lifting mechanism (expansion equipment)
64‧‧‧Cylinder casing
66‧‧‧ piston rod
68, 142‧‧‧Control unit (control equipment)
102‧‧‧ Laser processing equipment
104‧‧‧Abutment
104a‧‧‧Protruding
106‧‧‧Support structure
106a‧‧‧Support arm
108‧‧‧ piece lift
110‧‧‧ piece
112‧‧‧ Provisional institutions
112a, 112b‧‧‧ rails
116‧‧‧Mobile institutions (processing feeders, indexing feeds)
118‧‧‧Y-axis guide
120‧‧‧Y-axis mobile station
122‧‧‧Y-axis ball screw
124‧‧‧Y-axis pulse motor
126‧‧‧X-axis guide
128‧‧‧X-axis mobile station
130‧‧‧X-axis ball screw
132‧‧‧Workbench base
134‧‧‧Working table (holding table)
L1‧‧‧Light
L2‧‧‧Laser beam
X, Y, Z‧‧ Direction
圖1是示意地顯示檢查裝置之構成例等的圖。 圖2是示意地顯示膠帶貼附步驟的立體圖。 圖3是示意地顯示背面磨削步驟的立體圖。 圖4是示意地顯示背面磨削步驟的側面圖。 圖5是示意地顯示改質層形成步驟的立體圖。 圖6是示意地顯示改質層形成步驟之局部截面側視圖。 圖7是顯示在被加工物上形成有適當的改質層時的投影像之例的圖。 圖8是顯示在被加工物上未形成有適當的改質層時的投影像之例的圖。 圖9是示意地顯示雷射加工裝置之構成例的立體圖。 圖10之(A)及圖10之(B)是示意地顯示擴張裝置之構成例及擴張分割步驟的局部截面側視圖。 圖11是顯示在擴張分割步驟後的投影像之例的圖。FIG. 1 is a view schematically showing a configuration example and the like of an inspection apparatus. Fig. 2 is a perspective view schematically showing a tape attaching step. Fig. 3 is a perspective view schematically showing a back grinding step. Fig. 4 is a side view schematically showing a back grinding step. Fig. 5 is a perspective view schematically showing a step of forming a reforming layer. Fig. 6 is a partial cross-sectional side view schematically showing a step of forming a reforming layer. Fig. 7 is a view showing an example of a projection image when an appropriate modified layer is formed on a workpiece. Fig. 8 is a view showing an example of a projection image when an appropriate modified layer is not formed on a workpiece. Fig. 9 is a perspective view schematically showing a configuration example of a laser processing apparatus. FIGS. 10(A) and 10(B) are partial cross-sectional side views schematically showing a configuration example of the expansion device and an expansion and division step. Fig. 11 is a view showing an example of a projection image after the expansion division step.
2‧‧‧檢查裝置 2‧‧‧Checking device
4‧‧‧保持台 4‧‧‧ Keeping the table
4a‧‧‧保持面 4a‧‧‧ Keep face
6‧‧‧光源 6‧‧‧Light source
8‧‧‧投影面 8‧‧‧Projection surface
10‧‧‧攝像單元(攝像設備) 10‧‧‧ Camera unit (camera equipment)
11‧‧‧被加工物 11‧‧‧Processed objects
11b‧‧‧背面 11b‧‧‧Back
12‧‧‧判定單元(判定設備) 12‧‧‧Determining unit (judging device)
21‧‧‧膠帶(切割膠帶) 21‧‧‧ Tape (cut tape)
21b‧‧‧第2面 21b‧‧‧2nd
L1‧‧‧光 L1‧‧‧Light
Claims (8)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-111544 | 2016-06-03 | ||
| JP2016111544A JP6651257B2 (en) | 2016-06-03 | 2016-06-03 | Workpiece inspection method, inspection device, laser processing device, and expansion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201743373A true TW201743373A (en) | 2017-12-16 |
| TWI708285B TWI708285B (en) | 2020-10-21 |
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|---|---|---|---|
| TW106114601A TWI708285B (en) | 2016-06-03 | 2017-05-03 | Inspection method, inspection device, laser processing device, and expansion device for workpiece |
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| Country | Link |
|---|---|
| JP (1) | JP6651257B2 (en) |
| KR (1) | KR102285101B1 (en) |
| CN (1) | CN107464762B (en) |
| TW (1) | TWI708285B (en) |
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| TWI821521B (en) * | 2019-02-14 | 2023-11-11 | 日商迪思科股份有限公司 | Chuck table and inspection device |
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| JP6988669B2 (en) * | 2018-04-24 | 2022-01-05 | 株式会社デンソー | Inspecting method for laser-irradiated nickel film |
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| JP7366637B2 (en) * | 2019-08-16 | 2023-10-23 | 株式会社ディスコ | Workpiece confirmation method and processing method |
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| TWI821521B (en) * | 2019-02-14 | 2023-11-11 | 日商迪思科股份有限公司 | Chuck table and inspection device |
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| Publication number | Publication date |
|---|---|
| CN107464762A (en) | 2017-12-12 |
| KR102285101B1 (en) | 2021-08-02 |
| CN107464762B (en) | 2022-10-18 |
| KR20170137639A (en) | 2017-12-13 |
| JP6651257B2 (en) | 2020-02-19 |
| TWI708285B (en) | 2020-10-21 |
| JP2017220480A (en) | 2017-12-14 |
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