CN107464762B - Inspection method and inspection device for workpiece, laser processing device, and expansion device - Google Patents
Inspection method and inspection device for workpiece, laser processing device, and expansion device Download PDFInfo
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- CN107464762B CN107464762B CN201710405150.4A CN201710405150A CN107464762B CN 107464762 B CN107464762 B CN 107464762B CN 201710405150 A CN201710405150 A CN 201710405150A CN 107464762 B CN107464762 B CN 107464762B
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K26/70—Auxiliary operations or equipment
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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Abstract
本发明提供被加工物的检查方法、检查装置、激光加工装置、扩展装置,能够适当并且容易地判定改质层的状态。该被加工物的检查方法包含如下的步骤:改质层形成步骤,通过照射对于被加工物(11)具有透过性的波长的激光束(L2),在被加工物的内部形成作为使被加工物断裂时的起点的改质层(17),并且在被加工物的露出的面上产生与改质层对应的凹凸;拍摄步骤,通过使从光源(6)射出的光(L1)在被加工物的露出的面上反射并照射到投影面(8),形成对凹凸进行了强调的投影像(31),并且对投影像进行拍摄而形成图像;以及判定步骤,根据图像来判定改质层的状态。
The present invention provides a method for inspecting a workpiece, an inspection apparatus, a laser processing apparatus, and an expansion apparatus, which can appropriately and easily determine the state of a modified layer. This method for inspecting a workpiece includes a step of forming a modified layer, by irradiating a laser beam (L2) having a wavelength that is transparent to the workpiece (11) to form a modified layer inside the workpiece (11). The modified layer (17) at the starting point when the workpiece is broken, and unevenness corresponding to the modified layer is generated on the exposed surface of the workpiece; in the photographing step, the light (L1) emitted from the light source (6) is The exposed surface of the workpiece is reflected and irradiated on the projection surface (8) to form a projection image (31) that emphasizes unevenness, and the projection image is photographed to form an image; The state of the stratum.
Description
技术领域technical field
本发明涉及被加工物的检查方法、检查装置、激光加工装置、扩展装置,能够确认作为使被加工物断裂时的起点的改质层的状态。The present invention relates to a method for inspecting a workpiece, an inspection apparatus, a laser processing apparatus, and an expansion apparatus, which can confirm the state of a modified layer as a starting point when the workpiece is broken.
背景技术Background technique
在将由硅或SiC、蓝宝石等材料形成的晶片分割成多个芯片时,例如对透过性的激光束进行会聚而产生多光子吸收,由此对晶片的内部进行局部性地改质而形成改质层(改质区域)(例如,参照专利文献1)。由于与其他的区域相比该改质层较脆,因此之后仅通过施加较小的力就能够将晶片断裂而分割成多个芯片。When a wafer made of a material such as silicon, SiC, or sapphire is divided into a plurality of chips, for example, a transparent laser beam is converged to generate multiphoton absorption, thereby locally modifying the inside of the wafer to form a modified A modified layer (modified region) (for example, refer to Patent Document 1). Since the modified layer is brittle compared with other regions, the wafer can be broken and divided into a plurality of chips by applying a small force afterward.
但是,在以上述的方法来分割晶片等被加工物时,需要沿着设定于被加工物上的分割预定线(间隔道)可靠地形成改质层。因此,提出了如下的确认方法等:使用在红外线区域中具有感光度的照相机等对被加工物的内部进行拍摄,并确认改质层的位置(例如,参照专利文献2)。However, when a workpiece such as a wafer is divided by the above-described method, it is necessary to reliably form the modified layer along the line to be divided (spacer) set on the workpiece. Therefore, a confirmation method or the like has been proposed in which the inside of the workpiece is photographed using a camera or the like having sensitivity in the infrared region, and the position of the modified layer is confirmed (for example, see Patent Document 2).
专利文献1:日本特开2005-223284号公报Patent Document 1: Japanese Patent Laid-Open No. 2005-223284
专利文献2:日本特开2005-169407号公报Patent Document 2: Japanese Patent Laid-Open No. 2005-169407
然而,在被加工物的内部形成的改质层的宽度较窄,即使使用上述的确认方法也无法容易地掌握改质层的状态。因此,实际情况为:在实际地试着使被加工物断裂之前,无法适当地判定是否形成了需要的改质层。However, the width of the modified layer formed inside the workpiece is narrow, and the state of the modified layer cannot be easily grasped even by the above-mentioned confirmation method. Therefore, in reality, it is not possible to properly determine whether or not a desired reforming layer is formed before actually trying to break the workpiece.
发明内容SUMMARY OF THE INVENTION
本发明是鉴于该问题点而完成的,其目的在于,提供能够适当并且容易地判定改质层的状态的被加工物的检查方法、检查装置、激光加工装置、扩展装置。The present invention has been made in view of this problem, and an object thereof is to provide an inspection method, an inspection apparatus, a laser processing apparatus, and an expansion apparatus of a workpiece which can appropriately and easily determine the state of the modified layer.
根据本发明的第1方式,提供一种被加工物的检查方法,该被加工物的检查方法具有如下的步骤:改质层形成步骤,通过照射对于被加工物具有透过性的波长的激光束,在被加工物的内部形成作为使被加工物断裂时的起点的改质层,并且在被加工物的露出的面上产生与该改质层对应的凹凸;拍摄步骤,通过使从光源射出的光在被加工物的该露出的面上反射并照射到投影面上,形成对该凹凸进行了强调的投影像,并且对该投影像进行拍摄而形成图像;以及判定步骤,根据该图像来判定该改质层的状态。According to a first aspect of the present invention, there is provided a method for inspecting a workpiece, the method for inspecting a workpiece including a step of forming a modified layer by irradiating a laser beam having a wavelength that is transparent to the workpiece. beam, a modified layer is formed inside the workpiece as a starting point when the workpiece is broken, and unevenness corresponding to the modified layer is generated on the exposed surface of the workpiece; The emitted light is reflected on the exposed surface of the workpiece and irradiated on the projection surface to form a projection image with an emphasis on the unevenness, and the projection image is photographed to form an image; and a step of determining, based on the image to determine the state of the modified layer.
在本发明的第1方式中,也可以是,被加工物是在由多条分割预定线划分的正面侧的区域中形成有器件的晶片,该改质层是沿着该分割预定线而形成的。In the first aspect of the present invention, the workpiece may be a wafer in which devices are formed in a region on the front side divided by a plurality of planned dividing lines, and the modified layer may be formed along the planned dividing lines of.
并且,在本发明的第1方式中,也可以是,该被加工物的检查方法具有如下的步骤:划片带粘接步骤,在该改质层形成步骤之前,在被加工物上粘接划片带;以及扩展分割步骤,在该改质层形成步骤之后,对该划片带进行扩展而对被加工物施加力,以该改质层作为断裂的起点而将被加工物分割成多个芯片,该扩展分割步骤与该拍摄步骤并行地实施。Furthermore, in the first aspect of the present invention, the inspection method of the workpiece may include a step of: a dicing tape bonding step, and prior to the modified layer forming step, bonding the workpiece to the workpiece a dicing tape; and a step of expanding and dividing, after the step of forming the modified layer, expanding the dicing tape to apply a force to the workpiece, and dividing the workpiece into a plurality of pieces with the modified layer as a starting point of fracture For each chip, the extended dividing step is performed in parallel with the photographing step.
根据本发明的第2方式,提供一种检查装置,该检查装置用于对被加工物的改质层进行检查,该被加工物通过被照射具有透过性的波长的激光束而在内部形成有作为断裂的起点的该改质层,并且在该被加工物的露出的面上产生了与该改质层对应的凹凸,其特征在于,该检查装置具有:保持工作台,其对被加工物进行保持;光源,其对保持在该保持工作台上的被加工物的该露出的面照射光;投影面,其通过被照射被加工物所反射的来自光源的光而形成对该凹凸进行了强调的投影像;拍摄构件,其对形成在该投影面上的该投影像进行拍摄而形成图像;以及判定构件,其对所形成的该图像与预先设定的条件进行比较而判定该改质层的状态。According to a second aspect of the present invention, there is provided an inspection apparatus for inspecting a modified layer of a workpiece formed inside by being irradiated with a laser beam having a transmissive wavelength There is the modified layer as a starting point of fracture, and irregularities corresponding to the modified layer are generated on the exposed surface of the workpiece, wherein the inspection device includes a holding table for the workpiece to be processed. The object is held; the light source irradiates light to the exposed surface of the workpiece held on the holding table; the projection surface is irradiated with light from the light source reflected by the workpiece to form the unevenness. a projected image with emphasis; a photographing means for photographing the projected image formed on the projection surface to form an image; and a determination means for comparing the formed image with a preset condition to determine the change The state of the stratum.
根据本发明的第3方式,提供一种激光加工装置,该激光加工装置具有:卡盘工作台,其对被加工物进行保持;激光束照射构件,其通过对保持在该卡盘工作台上的被加工物照射激光束而在被加工物的内部形成作为使被加工物断裂时的起点的改质层,并且在被加工物的露出的面上产生与该改质层对应的凹凸;保持工作台,其对被照射了该激光束之后的被加工物进行保持;光源,其对保持在该保持工作台上的被加工物的该露出的面照射光;投影面,其通过被照射被加工物所反射的来自光源的光而形成对该凹凸进行了强调的投影像;拍摄构件,其对形成在该投影面上的该投影像进行拍摄而形成图像;判定构件,其对所形成的该图像与预先设定的条件进行比较而判定该改质层的状态;以及控制构件,其对各结构要素进行控制。According to a third aspect of the present invention, there is provided a laser processing apparatus including: a chuck table that holds a workpiece; and a laser beam irradiation member that is held on the chuck table by the pair The workpiece is irradiated with a laser beam to form a modified layer inside the workpiece as a starting point when the workpiece is broken, and irregularities corresponding to the modified layer are generated on the exposed surface of the workpiece; keep a table for holding the workpiece after being irradiated with the laser beam; a light source for irradiating light to the exposed surface of the workpiece held on the holding table; and a projection surface for being irradiated with light The light from the light source reflected by the processed object forms a projection image in which the unevenness is emphasized; the imaging means captures the projection image formed on the projection surface to form an image; the determination means The image is compared with preset conditions to determine the state of the modified layer; and a control member controls each structural element.
在本发明的第3方式中,该保持工作台也可以是该卡盘工作台,即能够将卡盘工作台用作保持工作台。In the third aspect of the present invention, the holding table may be the chuck table, that is, the chuck table can be used as the holding table.
根据本发明的第4方式,提供一种扩展装置,该扩展装置具有:支承基台,其借助粘接于被加工物上的划片带来支承该被加工物,该被加工物通过被照射具有透过性的波长的激光束而在内部形成作为断裂的起点的改质层,并且在该被加工物的露出的面上产生了与该改质层对应的凹凸;扩展构件,其对该划片带进行扩展;保持工作台,其对该被加工物进行保持;光源,其对保持在该保持工作台上的被加工物的该露出的面照射光;投影面,其通过被照射被加工物所反射的来自光源的光而形成对该凹凸进行了强调的投影像;拍摄构件,其对形成在该投影面上的该投影像进行拍摄而形成图像;判定构件,其对所形成的该图像与预先设定的条件进行比较而判定该改质层的状态;以及控制构件,其对各结构要素进行控制。According to a fourth aspect of the present invention, there is provided an expansion device including a support base that supports the object to be processed by a dicing tape adhered to the object to be processed by being irradiated A laser beam having a transparent wavelength to form a modified layer as a starting point for fracture inside, and to generate irregularities corresponding to the modified layer on the exposed surface of the workpiece; an expansion member for the A dicing belt is extended; a holding table holds the workpiece; a light source irradiates light to the exposed surface of the workpiece held on the holding table; a projection surface is irradiated The light from the light source reflected by the processed object forms a projection image in which the unevenness is emphasized; the imaging means captures the projection image formed on the projection surface to form an image; the determination means The image is compared with preset conditions to determine the state of the modified layer; and a control member controls each structural element.
在本发明的第4方式中,该保持工作台也可以是该支承基台。即,能够将支承基台用作保持工作台。In the fourth aspect of the present invention, the holding table may be the support base. That is, the support base can be used as a holding table.
在本发明的第1方式的被加工物的检查方法中,通过使从光源射出的光在产生了与改质层对应的微细凹凸的被加工物的面上反射并照射到投影面,由此形成对面内的凹凸进行了强调的投影像,并且根据对该投影像进行拍摄而形成的图像来判定改质层的状态,因此能够根据包含与改质层对应的被进行了强调的凹凸在内的图像而适当并且容易地判定改质层的状态。In the inspection method of the workpiece according to the first aspect of the present invention, the light emitted from the light source is reflected on the surface of the workpiece on which the fine irregularities corresponding to the modified layer are formed, and is irradiated to the projection surface. Since a projected image in which the unevenness in the plane is emphasized is formed, and the state of the modified layer is determined from an image formed by photographing the projected image, it is possible to include the emphasized unevenness corresponding to the modified layer. The image of the modified layer can be appropriately and easily determined.
并且,本发明的第2方式的检查装置、第3方式的激光加工装置以及第4方式的扩展装置都具有:光源,其对被加工物的露出的面照射光;投影面,其通过被照射被加工物所反射的来自光源的光而形成对该凹凸进行了强调的投影像;以及判定构件,其对所形成的图像和预先设定的条件进行比较而判定改质层的状态,因此能够通过实施上述的被加工物的检查方法而适当并且容易地判定改质层的状态。Further, the inspection apparatus of the second aspect, the laser processing apparatus of the third aspect, and the expansion apparatus of the fourth aspect of the present invention all include a light source that irradiates light to the exposed surface of the workpiece, and a projection surface that is irradiated by The light from the light source reflected by the object to be processed forms a projection image that emphasizes the unevenness; and the judgment means compares the formed image with preset conditions to judge the state of the modified layer, so that it is possible to The state of the modified layer can be appropriately and easily determined by implementing the above-mentioned inspection method of the workpiece.
附图说明Description of drawings
图1是示意性示出检查装置的结构例等的图。FIG. 1 is a diagram schematically showing a configuration example and the like of an inspection apparatus.
图2是示意性示出带粘接步骤的立体图。FIG. 2 is a perspective view schematically showing a tape bonding step.
图3是示意性示出背面磨削步骤的立体图。FIG. 3 is a perspective view schematically showing a back grinding step.
图4是示意性示出背面磨削步骤的侧视图。FIG. 4 is a side view schematically showing a back grinding step.
图5是示意性示出改质层形成步骤的立体图。FIG. 5 is a perspective view schematically showing a step of forming a modified layer.
图6是示意性示出改质层形成步骤的局部剖视侧视图。FIG. 6 is a partial cross-sectional side view schematically showing a step of forming a reforming layer.
图7是示出在被加工物上形成了适当的改质层的情况下的投影像的例子的图。FIG. 7 is a diagram showing an example of a projected image when an appropriate modified layer is formed on the workpiece.
图8是示出在被加工物上未形成适当的改质层的情况下的投影像的例子的图。FIG. 8 is a diagram showing an example of a projected image when an appropriate modified layer is not formed on the workpiece.
图9是示意性示出激光加工装置的结构例的立体图。FIG. 9 is a perspective view schematically showing a configuration example of a laser processing apparatus.
图10的(A)和图10的(B)是示意性示出扩展装置的结构例和扩展分割步骤的局部剖视侧视图。FIGS. 10(A) and 10(B) are partial cross-sectional side views schematically showing a configuration example of an expansion device and an expansion division step.
图11是示出扩展分割步骤之后的投影像的例子的图。FIG. 11 is a diagram showing an example of a projected image after the expansion division step.
标号说明Label description
11:被加工物;11a:正面;11b:背面;13:分割预定线(间隔道);15:器件;17:改质层(改质区域);21:带(划片带);21a:第1面;21b:第2面;31:投影像;33:影;35a、35b、35c、35d:不良区域;41:带(划片带);43:框架;L1:光;L2:激光束;2:检查装置;4:保持工作台;4a:保持面;6:光源;8:投影面;10:拍摄单元(拍摄构件);12:判定单元(判定构件);22:磨削装置;24:卡盘工作台;24a:保持面;26:磨削单元;28:主轴;30:安装座;32:磨削磨轮;34:磨轮基座;36:磨削磨具;42:激光加工装置;44:卡盘工作台;44a:保持面;46:激光照射单元;48:拍摄单元;52:扩展装置;54:支承构造(保持工作台);56:扩展鼓(支承基台,保持工作台);58:框架支承工作台;60:夹具;62:升降机构(扩展构件);64:缸筒;66:活塞杆;68:控制单元(控制构件);102:激光加工装置;104:基台;104a:突出部;106:支承构造;106a:支承臂;108:盒升降机;110:盒;112:暂放机构;112a、112b:导轨;116:移动机构(加工进给机构、分度进给机构);118:Y轴导轨;120:Y轴移动工作台;122:Y轴滚珠丝杠;124:Y轴脉冲电动机;126:X轴导轨;128:X轴移动工作台;130:X轴滚珠丝杠;132:工作台底座;134:卡盘工作台(保持工作台);134a:保持面;136:夹具;138:激光照射单元;140:拍摄单元;142:控制单元(控制构件)。11: workpiece; 11a: front surface; 11b: back surface; 13: planned dividing line (spacer lane); 15: device; 17: modified layer (modified region); 21: tape (dicing tape); 21a: 1st side; 21b: 2nd side; 31: projected image; 33: shadow; 35a, 35b, 35c, 35d: defective area; 41: tape (dicing tape); 43: frame; L1: light; L2: laser beam; 2: inspection device; 4: holding table; 4a: holding surface; 6: light source; 8: projection surface; 10: imaging unit (photographing member); 12: determination unit (determination member); ;24: Chuck table; 24a: Holding surface; 26: Grinding unit; 28: Spindle; 30: Mounting seat; 32: Grinding wheel; 34: Grinding wheel base; 36: Grinding tool; 42: Laser 44: chuck table; 44a: holding surface; 46: laser irradiation unit; 48: imaging unit; 52: extension device; 54: support structure (holding table); 56: extension drum (support base, Holding table); 58: Frame supporting table; 60: Clamp; 62: Elevating mechanism (expansion member); 64: Cylinder barrel; 66: Piston rod; 68: Control unit (control member); 102: Laser processing device; 104: base; 104a: protrusion; 106: support structure; 106a: support arm; 108: cassette lifter; 110: cassette; , indexing feed mechanism); 118: Y-axis guide rail; 120: Y-axis moving table; 122: Y-axis ball screw; 124: Y-axis pulse motor; 126: X-axis guide rail; 128: X-axis moving table ;130: X-axis ball screw; 132: Table base; 134: Chuck table (holding table); 134a: Holding surface; 136: Fixture; 138: Laser irradiation unit; 140: Shooting unit; 142: Control unit (control member).
具体实施方式Detailed ways
参照附图对本发明的一个方式的实施方式进行说明。图1是示意性示出检查装置的结构例等的图。如图1所示,本实施方式的检查装置2具有保持工作台4,该保持工作台4用于对在内部形成了改质层(改质区域)的板状的被加工物11进行保持。保持工作台4的上表面的一部分成为对被加工物11(或者粘贴在被加工物11上的带(划片带)21)进行保持的保持面4a。An embodiment of one embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram schematically showing a configuration example and the like of an inspection apparatus. As shown in FIG. 1 , the
在保持工作台4的上方配置有光源6,该光源6用于对保持工作台4所保持的整个被加工物11射出光L1。作为光源6例如使用白炽灯或LED等。但是,光源6的种类或位置等无限制。并且,光L1可以是平行光也可以是非平行光。在使光L1为平行光的情况下,例如可以使透镜等光学元件与光源6组合。另一方面,在使光L1为非平行光的情况下,优选使用发光区域较小并且能够视为点光源的光源6。A light source 6 for emitting light L1 to the
如图1所示,在由被加工物11反射的光L1的路径(光路)上设置有因照射反射后的光L1而形成投影像的投影面8。代表性地说,投影面8是平坦的屏幕,形成为与被加工物11相同程度的大小。另外,该投影面8只要按照至少能够对整个被加工物11进行投影的形态(位置、大小、形状等)进行设置即可。As shown in FIG. 1 , a
在本实施方式中,在保持工作台4的斜上方配置有光源6,并且在由被加工物11反射的光L1的路径上配置有与被加工物11的背面11b大致垂直的投影面8。因此,若从光源6向被加工物11射出向斜下方行进的光L1,则该光L1由被加工物11的露出的面(这里为背面11b)反射而照射到投影面8。其结果为,在投影面8上形成有反映出被加工物11的露出的面(即,背面11b)的状态的投影像。In the present embodiment, the light source 6 is arranged obliquely above the holding table 4 , and the
在面对投影面8的位置上配置有拍摄单元(拍摄构件)10,该拍摄单元(拍摄构件)10用于对形成在投影面8上的投影像进行拍摄而形成图像。该拍摄单元10例如是使透镜等光学元件与CCD或CMOS等拍摄元件组合得到的数字照相机,将拍摄投影像而形成的图像(影像)向外部输出。另外,作为该拍摄单元10可以使用形成静止图像的数字静态照相机、形成动态图像的数码照相机中的任意一种。At a position facing the
拍摄单元10连接有判定单元(判定构件)12,该判定单元(判定构件)12用于对从拍摄单元10输出的图像与预先设定的条件进行比较而判定形成于被加工物11的改质层的状态。关于由判定单元12进行的处理等详细情况,后述进行说明。The
接着,对使用上述的检查装置2的被加工物11的检查方法的例子进行说明。在本实施方式的被加工物11的检查方法中,首先,实施带粘接步骤(划片带粘接步骤),使带(划片带)21与被加工物11粘贴。图2是示意性示出带粘接步骤的立体图。Next, an example of the inspection method of the
如图2所示,被加工物11例如是由硅、SiC、玻璃以及蓝宝石等材料形成的圆盘状的晶片,其正面11a侧被分成中央的器件区域和包围器件区域的外周剩余区域。器件区域由设定成格子状的多个分割预定线(间隔道)13进一步划分成多个区域,在各区域中形成有IC(LSI)、LED等器件15。As shown in FIG. 2 , the
另外,在本实施方式中,将由硅、SiC、玻璃以及蓝宝石等材料形成的晶片作为被加工物11来使用,但被加工物11的材质、形状以及构造等没有限制。例如,也可以使用由任意的半导体、陶瓷、树脂以及金属等材料形成的被加工物11。同样,分割预定线13的配置或器件15的种类等没有限制。In this embodiment, a wafer made of materials such as silicon, SiC, glass, and sapphire is used as the
在带粘接步骤中,在上述的被加工物11的正面11a侧粘贴具有例如作为保护部件等的功能的带21。带21例如是形成为不小于被加工物11的大小(例如,直径)的树脂制的膜,在其第1面21a侧设置有由具有粘结力的树脂等形成的粘贴层层(糊层)。In the tape bonding step, the
由此,如图2所示,通过使带21的第1面21a侧与被加工物11的正面11a侧接触,能够将带21粘贴于被加工物11。通过将这样的带21粘贴于被加工物11,例如能够防止因之后的磨削时所施加的负荷等引起的器件15的破损。Thereby, as shown in FIG. 2 , the
另外,在本实施方式中,虽然将具有与被加工物11同等的大小的带21粘贴于被加工物11的正面11a侧,但也可以将更大的带21粘贴于被加工物11上。在该情况下,可以在带21的外周部分固定环状的框架,使得能够利用该环状的框架间接地支承被加工物11。In this embodiment, the
在带粘接步骤之后,实施背面磨削步骤,对被加工物11的背面11b进行磨削而使被加工物11成为规定的厚度。图3是示意性示出背面磨削步骤的立体图,图4是示意性示出背面磨削步骤的侧视图。背面磨削步骤例如由图3和图4所示的磨削装置22来实施。After the tape bonding step, a back surface grinding step is performed to grind the
磨削装置22具有用于对被加工物11进行吸引、保持的卡盘工作台24。卡盘工作台24与电动机等旋转驱动源(未图示)连结,绕与铅垂方向大致平行的旋转轴旋转。并且,在卡盘工作台24的下方设置有工作台移动机构(未图示),卡盘工作台24通过该工作台移动机构而沿水平方向移动。The grinding
卡盘工作台24的上表面的一部分成为对粘贴在被加工物11上的带21的第2面21b侧进行吸引、保持的保持面24a。通过形成在卡盘工作台24的内部的流路(未图示)等对该保持面24a作用有吸引源(未图示)的负压,产生用于吸引带21的吸引力。A part of the upper surface of the chuck table 24 becomes a holding
在卡盘工作台24的上方配置有磨削单元26。磨削单元26具有由磨削单元升降机构(未图示)支承的主轴外壳(未图示)。在主轴外壳中收纳有主轴28,在主轴28的下端部固定有圆盘状的安装座30。在该安装座30的下表面上装配有直径与安装座30大致相同的磨削磨轮32。A grinding
磨削磨轮32具有由不锈钢、铝等金属材料形成的磨轮基座34。在磨轮基座34的下表面上,多个磨削磨具36呈环状排列。在主轴28的上端侧(基端侧)连结有电动机等旋转驱动源(未图示),磨削磨轮32借助于从该旋转驱动源传递的旋转力而绕与铅垂方向大致平行的旋转轴旋转。The grinding
在背面磨削步骤中,首先,使粘贴于被加工物11上的带21的第2面21b与卡盘工作台24的保持面24a接触,并作用吸引源的负压。由此,被加工物11以背面11b侧向上方露出的状态由卡盘工作台24吸引、保持。In the back grinding step, first, the
接着,使卡盘工作台24向磨削磨轮32的下方移动。并且,如图3和图4所示,使卡盘工作台24和磨削磨轮32分别旋转,一边供给纯水等磨削液一边使主轴外壳(主轴28)下降。主轴外壳的下降量被调整成磨削磨具36的下表面与被加工物11的背面11b相接触的程度。Next, the chuck table 24 is moved below the grinding
由此,能够对背面11b侧进行磨削而使被加工物11变薄。例如一边测定被加工物11的厚度一边执行该背面磨削步骤。当被加工物11薄到规定的厚度(代表性地说,为器件芯片的精加工厚度)时,结束背面磨削步骤。Thereby, the
在背面磨削步骤之后,实施改质层形成步骤,将对于被加工物11具有透过性的波长的激光束照射并会聚到被加工物11,而在被加工物11的内部形成作为使被加工物11断裂时的起点的改质层。图5是示意性示出改质层形成步骤的立体图,图6是示意性示出改质层形成步骤的局部剖视侧视图。改质层形成步骤例如由图5和图6所示的激光加工装置42来实施。After the backside grinding step, a modified layer forming step is performed, and a laser beam having a wavelength having transmittance to the
激光加工装置42具有用于对被加工物11进行吸引、保持的卡盘工作台44。卡盘工作台44与电动机等旋转驱动源(未图示)连结,绕与铅垂方向大致平行的旋转轴旋转。并且,在卡盘工作台44的下方设置有工作台移动机构(未图示),卡盘工作台44通过该工作台移动机构而在水平方向上移动。The
卡盘工作台44的上表面的一部分成为对粘贴在被加工物11上的带21的第2面21b侧进行吸引、保持的保持面44a。通过形成在卡盘工作台44的内部的流路(未图示)等而对该保持面44a作用有吸引源(未图示)的负压,产生用于对带21进行吸引的吸引力。A part of the upper surface of the chuck table 44 becomes a holding
在卡盘工作台44的上方配置有激光照射单元46。在与激光照射单元46相邻的位置上设置有用于对被加工物11进行拍摄的拍摄单元48。激光照射单元46将由激光振荡器(未图示)脉冲振荡出的激光束L2照射并会聚到规定的位置。激光振荡器构成为能够脉冲振荡出对于被加工物11具有透过性的波长(难以吸收的波长)的激光束L2。A
在改质层形成步骤中,首先,使粘贴在被加工物11上的带21的第2面21b与卡盘工作台44的保持面44a接触,并作用吸引源的负压。由此,被加工物11以背面11b侧向上方露出的状态由卡盘工作台44吸引、保持。In the modified layer forming step, first, the
接着,使保持着被加工物11的卡盘工作台44移动、旋转,而使激光照射单元46与加工对象的分割预定线13的端部对准。并且,一边从激光照射单元46朝向被加工物11的背面11b照射激光束L2,一边使卡盘工作台44在与加工对象的分割预定线13平行的方向上移动。即,从被加工物11的背面11b侧沿着分割预定线13照射激光束L2。Next, the chuck table 44 holding the
此时,使激光束L2的聚光点的位置与被加工物11的内部对准。由此,能够通过多光子吸收对激光束L2的聚光点附近进行改质,从而形成沿着加工对象的分割预定线13的改质层(改质区域)17。重复进行卡盘工作台44的移动、旋转以及激光束L2的照射、会聚,例如当沿着所有的分割预定线13形成改质层17时,结束改质层形成步骤。At this time, the position of the condensing point of the laser beam L2 is aligned with the inside of the
另外,当在该改质层形成步骤中将激光束L2照射并会聚到被加工物11时,被加工物11在激光束L2的聚光点附近膨胀,在正面11a和背面11b的与改质层17对应的位置上形成有无法视觉确认的程度的微细的凸部(代表性地说,为亚微米级单位)。即,按照与在被加工物11的内部形成改质层17时大致相同的时机形成凸部,在结束了改质层形成步骤的状态下,在被加工物11的正面11a和背面11b上存在与改质层17对应的微细的凹凸。In addition, when the laser beam L2 is irradiated and converged on the object to be processed 11 in this modified layer forming step, the object to be processed 11 expands in the vicinity of the converging point of the laser beam L2, and the
在本实施方式的被加工物的检查方法中,利用该凹凸来判定改质层17的状态。具体而言,在改质层形成步骤之后,实施拍摄步骤,使光L1在被加工物11上反射而形成对凹凸进行了强调的投影像,并且利用拍摄单元12对投影像进行拍摄而形成图像。In the inspection method of the workpiece of the present embodiment, the state of the modified
拍摄步骤由上述的检查装置2来实施。首先,使被加工物11载置在保持工作台4上。具体而言,如图1所示,使粘贴在被加工物11上的带21的第2面21b与保持工作台4的保持面4a接触。由此,被加工物11以背面11b侧向上方露出的状态由保持工作台4保持。The imaging step is carried out by the above-described
接着,如图1所示,从光源6射出光L1。光源6按照能够对于由保持工作台4保持的整个被加工物11照射光L1的形态(位置、朝向等)进行设置。由此,从光源6射出的光L1由被加工物11的背面11b反射。Next, as shown in FIG. 1 , light L1 is emitted from the light source 6 . The light source 6 is installed in a form (position, orientation, etc.) capable of irradiating the light L1 to the
并且,在由被加工物11反射的光L1的路径上配置有投影面8。由此,由被加工物11的背面11b反射了的光L1被照射到投影面8,形成与被加工物11的背面11b的状态对应的投影像。图7是示出在被加工物11上形成了适当的改质层17的情况下的投影像的例子的图。Moreover, the
除了基于改质层17的微细的凸部之外,被加工物11的背面11b是大致平坦的。即,照射到背面11b的除了凸部之外的区域的光L1在背面11b反射之后也几乎不会扩散。另一方面,照射到背面11b的凸部的光L1因凸部的凸面镜这样的功能而扩散。The
由此,当由被加工物11的背面11b反射了的光L1照射到投影面8时,得到图7所示的投影像31。在该投影像31中,对与改质层17对应的凹凸进行强调而成为影33。然后,利用拍摄单元10对投影像31进行拍摄,形成包含投影像31的信息在内的图像。当由拍摄单元10形成的图像被发送给判定单元12时,结束拍摄步骤。Thereby, when the light L1 reflected by the
在拍摄步骤之后,实施判定步骤,对由拍摄单元10形成的图像与预先设定的条件进行比较而判定改质层17的状态。如图7所示,在形成有适合被加工物11断裂的改质层17的情况下,例如与改质层17对应地形成的影33的宽度也变粗。After the imaging step, a determination step is performed, and the state of the modified
由此,通过图像处理等来检测该影33的宽度,并与预先设定的基准的宽度(基准值、条件)进行比较,由此能够判定是否形成有适当的改质层17。具体而言,例如在影33的宽度为基准值以上的情况下,判定单元12判定为形成适当的改质层17。另一方面,在影33的宽度比基准值窄的情况下,判定单元12判定为未形成适当的改质层17。Thereby, by detecting the width of the
另外,将由拍摄单元10形成的图像内的区域划分成多个微小的区域(微小区域),通过将在各微小区域内所检测的影33的宽度与基准值进行比较,能够判定在各微小区域中是否形成有适当的改质层17。并且,如果使用该方法,则也可以确定未形成适当的改质层17的不良区域的位置。In addition, the area in the image formed by the
图8是示出在被加工物11中未形成适当的改质层17的情况下的投影像31的例子的图。如图8所示,在未形成适当的改质层17的情况下,在投影像31中存在影33的宽度比基准值窄的不良区域35a、35b、35c、35d。能够利用判定在各微小区域中是否形成有适当的改质层17的上述的方法来确定该不良区域35a、35b、35c、35d的位置。FIG. 8 is a diagram showing an example of a projected
当在被加工物11中发现不良区域35a、35b、35c、35d的情况下,例如也可以再次实施改质层形成步骤,在不良区域35a、35b、35c、35d中形成改质层17。并且,也可以变更改质层形成步骤的加工条件以便防止此后的加工不良。When the
如上所述,在本实施方式的被加工物的检查方法中,使从光源6射出的光L1在产生了与改质层17对应的微细凹凸的被加工物11的背面11b上反射并照射到投影面8,由此形成对面内的凹凸进行了强调的投影像31,并且根据对该投影像31进行拍摄而形成的图像来判定改质层17的状态,因此能够根据包含与改质层17对应的进行了强调的凹凸在内的图像而适当并且容易地判定改质层17的状态。As described above, in the inspection method of the workpiece according to the present embodiment, the light L1 emitted from the light source 6 is reflected on the
并且,本实施方式的检查装置2具有:光源6,其向被加工物11的背面(露出的面)11b照射光L1;投影面8,其因被投影由被加工物11反射的来自光源6的光L1而形成对面内的凹凸进行了强调的投影像31;拍摄单元(拍摄构件)10,其对投影到投影面8上的投影像31进行拍摄而形成图像;以及判定单元(判定构件)12,其对所形成的图像与预先设定的条件进行比较而判定改质层17的状态,因此能够通过实施上述的被加工物的检查方法而适当且容易地判定改质层17的状态。Further, the
另外,本发明不限于上述实施方式的记载,可以各种变更而实施。例如,也可以将上述实施方式的检查装置2组装于激光加工装置中。图9是示意性示出组装了检查装置2的激光加工装置的结构例的立体图。如图9所示,激光加工装置102具有支承各构造的基台104。在基台104的端部设置有沿Z轴方向(铅垂方向、高度方向)延伸的支承构造106。In addition, the present invention is not limited to the description of the above-described embodiment, and can be implemented with various modifications. For example, the
在远离支承构造106的基台104的角部设置有向上方突出的突出部104a。在突出部104a的内部形成有空间,在该空间中设置有能够升降的盒升降机108。在盒升降机108的上表面上载置有能够收纳多个被加工物11的盒110。Protruding
在接近突出部104a的位置上设置有用于暂放上述的被加工物11的暂放机构112。暂放机构112例如包含一边维持与Y轴方向(分度进给方向)平行的状态一边接近或远离的一对导轨112a、112b。A
各导轨112a、112b具有对被加工物11(环状的框架)进行支承的支承面和与支承面大致垂直的侧面,通过搬送机构(未图示)将从盒110拉出的被加工物11(环状的框架)在X轴方向(加工进给方向)上夹住且对准于规定的位置。Each of the
在基台104的中央设置有移动机构(加工进给机构、分度进给机构)116。移动机构116具有与Y轴方向平行的一对Y轴导轨118,该一对Y轴导轨118被配置在基台104的上表面上。Y轴移动工作台120以能够滑动的方式安装在Y轴导轨118上。In the center of the
在Y轴移动工作台120的背面侧(下表面侧)设置有螺母部(未图示),与Y轴导轨118平行的Y轴滚珠丝杠122与该螺母部螺合。Y轴脉冲电动机124与Y轴滚珠丝杠122的一端部连结。如果利用Y轴脉冲电动机124使Y轴滚珠丝杠122旋转,则Y轴移动工作台120沿着Y轴导轨118在Y轴方向上移动。A nut portion (not shown) is provided on the back side (lower surface side) of the Y-axis moving table 120 , and the Y-
在Y轴移动工作台120的正面(上表面)上设置有与X轴方向平行的一对X轴导轨126。X轴移动工作台128以能够滑动的方式安装在X轴导轨126上。A pair of
在在X轴移动工作台128的背面侧(下表面侧)设置有螺母部(未图示),与X轴导轨126平行的X轴滚珠丝杠130与该螺母部螺合。X轴脉冲电动机(未图示)与X轴滚珠丝杠130的一端部连结。如果利用X轴脉冲电动机使X轴滚珠丝杠130旋转,则X轴移动工作台128沿着X轴导轨126在X轴方向上移动。A nut portion (not shown) is provided on the back side (lower surface side) of the X-axis moving table 128 , and the
在X轴移动工作台128的正面侧(上表面侧)设置有工作台底座132。在工作台底座132的上部配置有用于对被加工物11进行吸引、保持的卡盘工作台(保持工作台)134。在卡盘工作台134的周围设置有从四个方向将对被加工物11进行支承的环状的框架固定的4个夹具136。A table base 132 is provided on the front side (upper surface side) of the X-axis moving table 128 . A chuck table (holding table) 134 for sucking and holding the
卡盘工作台134与电动机等旋转驱动源(未图示)连结,绕与Z轴方向(铅垂方向、高度方向)大致平行的旋转轴旋转。如果利用上述的移动机构116使X轴移动工作台128在X轴方向上移动,则使卡盘工作台134在X轴方向上加工进给。并且,如果利用移动机构116使Y轴移动工作台120在Y轴方向上移动,则使卡盘工作台134在Y轴方向上分度进给。The chuck table 134 is connected to a rotational drive source (not shown) such as a motor, and rotates about a rotation axis substantially parallel to the Z-axis direction (vertical direction, height direction). When the X-axis moving table 128 is moved in the X-axis direction by the above-described
卡盘工作台134的上表面成为对被加工物11进行保持的保持面134a。该保持面134a形成为与X轴方向和Y轴方向大致平行,通过形成在卡盘工作台134或工作台底座132的内部的流路(未图示)等而与吸引源(未图示)连接。The upper surface of the chuck table 134 serves as a holding
在支承构造106中设置有朝向基台104的中央侧突出的支承臂106a,在该支承臂106a的前端部配置有朝向下方照射激光束的激光照射单元138。并且,在与激光照射单元138相邻的位置上设置有对被加工物11进行拍摄的拍摄单元140。The
激光照射单元138具有脉冲振荡出对于被加工物11具有透过性的波长的激光束的激光振荡器(未图示)。例如,当希望在由硅等半导体材料形成的被加工物11上形成改质层17的情况下,可以使用具有脉冲振荡出波长为1064nm的激光束的Nd:YAG等激光介质的激光振荡器。The
并且,激光照射单元138具有对从激光振荡器脉冲振荡出的激光束进行会聚的聚光器(未图示),对保持在卡盘工作台134上的被加工物11等照射并会聚该激光束。一边利用激光照射单元138照射激光束,一边使卡盘工作台134在X轴方向上加工进给,由此能够沿着X轴方向对被加工物11进行激光加工(改质)。In addition, the
加工后的被加工物11例如被搬送到与暂放机构112相邻的检查装置2的保持工作台4上。在支承构造106的保持工作台4侧形成有投影面8。另外,在图9中,省略了检查装置2的结构的一部分。由检查装置2进行了检查的被加工物11例如被搬送机构载置在暂放机构112上,被收纳在盒110中。The processed to-
搬送机构、移动机构116、卡盘工作台134、激光照射单元138以及拍摄单元140等结构要素分别与控制单元(控制构件)142连接。该控制单元142按照被加工物11的加工所需的一系列的工序控制上述的各结构要素。Components such as the conveying mechanism, the moving
另外,也可以使激光加工装置102的卡盘工作台134具有作为检查装置2的保持工作台4的功能。这样,通过将卡盘工作台134用作保持工作台4,能够省略保持工作台4。在该情况下,使光源6、投影面8以及拍摄单元(拍摄构件)10等按照卡盘工作台134来配置。同样,也可以使控制单元142具有作为检查装置2的判定单元12的功能。在该情况下,能够省略判定单元12。In addition, the chuck table 134 of the
并且,也可以使上述实施方式的检查装置2组装在用于对带(划片带)进行扩展的扩展装置上。图10的(A)和图10的(B)是示意性示出组装了检查装置2的扩展装置的结构例和使用该扩展装置的扩展分割步骤的局部剖视侧视图。另外,在使用该扩展装置的情况下,在上述的带粘接步骤(划片带粘接步骤)等中,将直径比被加工物11大的带41粘贴在被加工物11上,并在带41的外周部分固定环状的框架43。Furthermore, the
如图10的(A)和图10的(B)所示,扩展装置52具有:支承构造(保持工作台)54,其借助带41和框架43从侧方支承被加工物11;以及圆筒状的扩展鼓(支承基台、保持工作台)56,其隔着带41从下方支承被加工物11。例如,扩展鼓56的内径比被加工物11的直径大,扩展鼓56的外径比固定在带41上的框架43的内径小。As shown in FIGS. 10(A) and 10(B) , the
支承构造54包含对框架41进行支承的框架支承工作台58。该框架支承工作台58的上表面成为对固定在带41的外周部分上的框架43进行支承的支承面。在框架支承工作台58的外周部分设置有用于对框架41进行固定的多个夹具60。The
在支承构造54的下方设置有升降机构(扩展构件)62。升降机构62具有:固定在下方的基台(未图示)上的缸筒64;以及插入到缸筒64中的活塞杆66。在活塞杆66的上端部固定有框架支承工作台58。A lift mechanism (expansion member) 62 is provided below the
该升降机构62使支承构造54升降以使框架支承工作台58的上表面(支承面)在与扩展鼓56的上端相等的高度的基准位置与比扩展鼓56的上端靠下方的扩展位置之间移动。升降机构62的动作例如由与升降机构62连接的控制单元(控制构件)68控制。The elevating
在支承构造54和扩展鼓56的上方配置有构成检查装置2的光源6、投影面8、拍摄单元(拍摄构件)10等。另外,该扩展装置52的支承构造54或扩展鼓56作为检查装置2的保持工作台4发挥功能。当然,也可以与支承构造54或扩展鼓56分开地设置有保持工作台4。Above the
在实施对带41进行扩展而将被加工物11分割的扩展分割步骤时,首先,如图10的(A)所示,使框架43载置在移动到基准位置的框架支承工作台58的上表面上,并利用夹具60固定该框架43。由此,扩展鼓56的上端在被加工物11与框架43之间与带41接触。When performing the expansion and division step of expanding the
接着,利用升降机构62使支承构造54下降,如图10的(B)所示,使框架支承工作台58的上表面移动到比扩展鼓56的上端靠下方的扩展位置。其结果为,扩展鼓56相对于框架支承工作台58上升,带41被扩展鼓56上推而呈放射状扩展。Next, the
当带41被扩展时,对被加工物11施加有对带41进行扩展的方向的力(放射状的力)。由此,被加工物11以改质层17为断裂的起点而分割成多个芯片,此外,对相邻的芯片彼此的间隔进行扩张。在该扩展分割步骤的前后,例如可以实施上述的拍摄步骤来检查被加工物11。When the
图11是示出扩展分割步骤之后的投影像的例子的图。在扩展分割步骤中将被加工物11分割成多个芯片,当对相邻的芯片彼此的间隔进行扩张时,影33的宽度也变宽。并且,由于在以改质层17为起点而分割的芯片中残留有在被加工物11的磨削时所产生的应力(内部应力),因此芯片因该应力而成为稍微弯曲的状态。由此,射出到芯片的光L1被稍微会聚,得到包含进一步对芯片彼此的间隔进行了强调的影33在内的投影像。FIG. 11 is a diagram showing an example of a projected image after the expansion division step. In the expansion and division step, the
由此,通过图像处理等来检测该影33的宽度,并与预先设定的基准的宽度(基准值、条件)进行比较,由此能够可靠地判定被加工物11是否被适当地分割,芯片彼此的间隔是否适当等。另外,在未实施对被加工物11的背面11b进行磨削的磨削步骤的情况下,处于在形成器件15等的图案时所产生的应力(内部应力)残留于被加工物11的状态。通过由该应力引起的芯片的弯曲而得到对影33进行强调的相同的效果。Thereby, by detecting the width of the
另外,也可以与扩展分割步骤并行(同时)地实施拍摄步骤。例如,作为拍摄单元6使用能够进行高速摄影的摄影机,通过对扩展分割步骤中的投影像31进行拍摄,能够确认断裂的进展状况。并且,根据该确认的结果来设定对带41进行扩展时的速度、扩展的方向以及带41的种类等,由此能够更可靠地分割被加工物11。In addition, the photographing step may be performed in parallel (simultaneously) with the extended division step. For example, by using a camera capable of high-speed imaging as the imaging unit 6 and imaging the
并且,也可以使控制单元68具有作为检查装置2的判定单元12的功能。在该情况下,能够省略判定单元12。Furthermore, the
另外,在上述实施方式中,虽然在改质层形成步骤之前实施背面磨削步骤,但也可以省略背面磨削步骤等。并且,也可以在改质层形成步骤之后实施背面磨削步骤。并且,虽然使在上述实施方式中,被加工物11的背面11b露出,但在使被加工物11的正面11a露出的情况下也能够以相同的方法来检查被加工物11。In addition, in the above-described embodiment, the back surface grinding step is performed before the reforming layer forming step, but the back surface grinding process and the like may be omitted. In addition, the back surface grinding step may be performed after the reforming layer forming step. Moreover, although the
除此之外,上述实施方式的构造、方法等能够在不脱离本发明的目的范围内适当变更而实施。In addition to this, the structure, method, and the like of the above-described embodiments can be appropriately changed and implemented without departing from the scope of the present invention.
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11610701B2 (en) | 2017-11-15 | 2023-03-21 | Nippon Telegraph And Telephone Corporation | Composite wiring, signal acquisition member, and production method of same |
JP7112204B2 (en) * | 2018-02-07 | 2022-08-03 | 株式会社ディスコ | Nondestructive detection method |
JP7256604B2 (en) * | 2018-03-16 | 2023-04-12 | 株式会社ディスコ | Nondestructive detection method |
JP7027215B2 (en) * | 2018-03-27 | 2022-03-01 | 株式会社ディスコ | Wafer generation method and wafer generation device |
JP6988669B2 (en) * | 2018-04-24 | 2022-01-05 | 株式会社デンソー | Inspecting method for laser-irradiated nickel film |
JP7217165B2 (en) * | 2019-02-14 | 2023-02-02 | 株式会社ディスコ | Chuck table and inspection device |
JP7282461B2 (en) * | 2019-04-16 | 2023-05-29 | 株式会社ディスコ | Inspection equipment and processing equipment |
US20220181157A1 (en) * | 2019-04-19 | 2022-06-09 | Tokyo Electron Limited | Processing apparatus and processing method |
JP7366637B2 (en) * | 2019-08-16 | 2023-10-23 | 株式会社ディスコ | Workpiece confirmation method and processing method |
JP7373950B2 (en) * | 2019-09-12 | 2023-11-06 | 株式会社ディスコ | How to check laser processing equipment and protective window |
JP7427337B2 (en) * | 2020-04-03 | 2024-02-05 | 株式会社ディスコ | Wafer inspection method |
JP7455476B2 (en) * | 2020-05-28 | 2024-03-26 | 株式会社ディスコ | Wafer inspection equipment and wafer inspection method |
JP7530763B2 (en) * | 2020-08-06 | 2024-08-08 | Towa株式会社 | Cutting device and manufacturing method of cut products |
JP7580886B2 (en) * | 2021-01-12 | 2024-11-12 | 株式会社ディスコ | Inspection equipment and tape expansion equipment |
JP7704609B2 (en) | 2021-08-05 | 2025-07-08 | 株式会社ディスコ | Inspection Equipment |
JP2023025742A (en) | 2021-08-11 | 2023-02-24 | 株式会社ディスコ | Light irradiation device |
US20250218872A1 (en) * | 2022-04-27 | 2025-07-03 | Yamaha Hatsudoki Kabushiki Kaisha | Expanding device, semiconductor chip manufacturing method, and semiconductor chip |
WO2023209904A1 (en) * | 2022-04-27 | 2023-11-02 | ヤマハ発動機株式会社 | Dicing apparatus, semiconductor chip manufacturing method, and semiconductor chip |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008004395A1 (en) * | 2006-07-03 | 2008-01-10 | Hamamatsu Photonics K.K. | Laser processing method |
JP2013016703A (en) * | 2011-07-05 | 2013-01-24 | Disco Abrasive Syst Ltd | Processing method of sapphire substrate |
JP2014082418A (en) * | 2012-10-18 | 2014-05-08 | Disco Abrasive Syst Ltd | Laser processing device |
JP2015131303A (en) * | 2014-01-09 | 2015-07-23 | 株式会社ディスコ | Operation characteristic detection method for processing feeding mechanism in laser processor, and laser processor |
CN105047612A (en) * | 2014-04-17 | 2015-11-11 | 株式会社迪思科 | Wafer processing method |
CN105414744A (en) * | 2014-09-12 | 2016-03-23 | 株式会社迪思科 | Laser processing apparatus |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5587004A (en) * | 1978-12-25 | 1980-07-01 | Hitachi Zosen Corp | Surface-property measuring method |
JP2005109324A (en) * | 2003-10-01 | 2005-04-21 | Tokyo Seimitsu Co Ltd | Laser beam dicing device |
JP4354262B2 (en) * | 2003-12-08 | 2009-10-28 | 株式会社ディスコ | Confirmation method of laser-processed altered layer |
JP2005177763A (en) * | 2003-12-16 | 2005-07-07 | Disco Abrasive Syst Ltd | Laser-processed altered layer confirmation device |
JP4402973B2 (en) | 2004-02-09 | 2010-01-20 | 株式会社ディスコ | Wafer division method |
US9138913B2 (en) * | 2005-09-08 | 2015-09-22 | Imra America, Inc. | Transparent material processing with an ultrashort pulse laser |
JP5101073B2 (en) * | 2006-10-02 | 2012-12-19 | 浜松ホトニクス株式会社 | Laser processing equipment |
JP6001931B2 (en) * | 2012-06-14 | 2016-10-05 | 株式会社ディスコ | Wafer processing method |
CN104781912A (en) * | 2012-11-20 | 2015-07-15 | 古河电气工业株式会社 | Method for manufacturing semiconductor chips and surface protective tape for thin-film grinding used in same |
JP2014223672A (en) * | 2013-04-25 | 2014-12-04 | 三菱マテリアル株式会社 | Method of and device for laser-processing rotor |
JP5603453B1 (en) * | 2013-04-26 | 2014-10-08 | 古河電気工業株式会社 | Adhesive tape for semiconductor wafer protection |
JP6347714B2 (en) * | 2014-10-02 | 2018-06-27 | 株式会社ディスコ | Wafer processing method |
JP6360411B2 (en) * | 2014-10-09 | 2018-07-18 | 株式会社ディスコ | Wafer processing method |
-
2016
- 2016-06-03 JP JP2016111544A patent/JP6651257B2/en active Active
-
2017
- 2017-05-03 TW TW106114601A patent/TWI708285B/en active
- 2017-05-31 KR KR1020170067755A patent/KR102285101B1/en active Active
- 2017-05-31 CN CN201710405150.4A patent/CN107464762B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008004395A1 (en) * | 2006-07-03 | 2008-01-10 | Hamamatsu Photonics K.K. | Laser processing method |
JP2013016703A (en) * | 2011-07-05 | 2013-01-24 | Disco Abrasive Syst Ltd | Processing method of sapphire substrate |
JP2014082418A (en) * | 2012-10-18 | 2014-05-08 | Disco Abrasive Syst Ltd | Laser processing device |
JP2015131303A (en) * | 2014-01-09 | 2015-07-23 | 株式会社ディスコ | Operation characteristic detection method for processing feeding mechanism in laser processor, and laser processor |
CN105047612A (en) * | 2014-04-17 | 2015-11-11 | 株式会社迪思科 | Wafer processing method |
CN105414744A (en) * | 2014-09-12 | 2016-03-23 | 株式会社迪思科 | Laser processing apparatus |
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