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TW201741362A - 寡聚物、包含其之組成物及複合材料 - Google Patents

寡聚物、包含其之組成物及複合材料 Download PDF

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TW201741362A
TW201741362A TW105144141A TW105144141A TW201741362A TW 201741362 A TW201741362 A TW 201741362A TW 105144141 A TW105144141 A TW 105144141A TW 105144141 A TW105144141 A TW 105144141A TW 201741362 A TW201741362 A TW 201741362A
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reactant
oligomer
resin
compound
composition
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TW105144141A
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TWI606076B (zh
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洪銘聰
李雲卿
楊偉達
鄞盟松
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財團法人工業技術研究院
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Abstract

本揭露提供一種寡聚物、包含其之組成物及複合材料。該寡聚物可為反應物(a)及反應物(b)反應之產物，其中該寡聚物之數目平均分子量可為1,000至10,000；反應物(a)可為反應物(c)及反應物(d)反應之產物；反應物(b)可為具有式(I)結構的化合物、具有式(II)結構的化合物、具有式(III)結構的化合物、具有式(IV)結構的化合物、或上述之組合□其中，a可為0或1、以及，R1可獨立為H、或□，其中，b可為0或1至6之整數、c可為0或1、d可為0或1至6之整數、以及至少一R1可不為氫；反應物(c)係具有式(V)結構的化合物、具有式(VI)結構的化合物、或上述之組合□其中，R2係獨立為C5-10烷基；反應物(d)係具有式(VII)結構的化合物□其中，e係0或1至10之整數。

Description

寡聚物、包含其之組成物及複合材料
本揭露關於一種寡聚物、包含其之組成物及複合材料。
新時代的電子產品趨向輕薄短小，並適合高頻傳輸，因此電路板的配線走向高密度化。高頻電子元件與電路板接合，為了維持傳輸速率及保持傳輸訊號完整性，電路板基板材料必須兼具較低的介電常數(dielectric constant、Dk)及耗散因子(dissipation factor、Df)。
由於傳統電路板材料其介電常數(dielectric constant、Dk)及耗散因子(dissipation factor、Df)普遍偏高，因此如何改善電路板基板材料的介電常數及耗散因子，係為目前印刷電路板製程的重要課題。
根據本揭露實施例，本揭露提供一種寡聚物。該寡聚物可為反應物(a)及反應物(b)反應之產物，其中該寡聚物之數目平均分子量可為1,000至10,000；反應物(a)可為反應物(c)及反應物(d)反應之產物；反應物(b)可為具有式(I)結構的化合物、具有式(II)結構 的化合物、具有式(III)結構的化合物、具有式(IV)結構的化合物、或上述之組合 其中，a可為0或1、以及，R1可獨立為H、或，其中，b可為0或1至6之整數、c可為0或1、d可為0或1至6之整數、以及至少一R1可不為氫；反應物(c)係具有式(V)結構的化合物、具有式(VI)結構的化合物、或上述之組合 其中，R2係獨立為C5-10烷基；反應物(d)係具有式(VII)結構的化合物 其中，e係0或1至10之整數。
根據本揭露實施例，本揭露亦提供一種組成物，包含： 100重量份之上述寡聚物；以及20-110重量份之交聯劑。
根據本揭露實施例，本揭露亦提供一種複合材料，包含：上述組成物所形成之固化物或半固化物；以及一基材，其中該固化物或半固化物係位於該基材之上或位於該基材之中。
本揭露實施例提供一種寡聚物、包含其之組成物及複合材料。根據本揭露之實施例，寡聚物可為反應物(a)及反應物(b)(例如具有兩個或以上可進行加成反應的烯烴官能基)之反應(例如加成聚合反應)產物。根據本揭露之實施例，寡聚物可為由環狀烯烴類進行加成反應所得，且具有枝狀結構(branched structure)。根據本揭露之實施例，寡聚物可藉由反應物組成及比例控制所得之寡聚物的數目平均分子量(例如介於1,000至10,000之間)。根據本揭露之實施例，寡聚物具有高熱安定性、以及於有機溶劑中擁有良好的溶解度，增加其可加工性。根據本揭露之實施例，寡聚物與習知作為印刷電路板材質之樹脂具有良好之可相容性，因此在將寡聚物與上述樹脂混合形成組成物時，不易有相分離的現象發生。根據本揭露之實施例，寡聚物具有較低極性，且其化學結構中具備可交聯之官能基，有利於後續應用於基板材料中，增加基板材料的機械強度。本揭露實施例亦提供一種包含上述寡聚物的組成物及包含其固化物或半固化物的複合材料(例如為一預浸片)。本揭露所述之組成物之固化物具有 較低的介電常數(dielectric constant、Dk)及耗散因子(dissipation factor、Df)，可作為高頻基板材料，解決插入損失(insertion loss)的問題。
根據本揭露之實施例，該寡聚物可為反應物(a)及反應物(b)之反應(例如加成聚合反應)產物。根據本揭露之實施例，該寡聚物數目平均分子量可約介於1,000至10,000，例如約介於1,000至9,000、約介於1,000至8,000、約介於1,000至7,000、約介於1,000至6,000、約介於1,000至5,000、約介於1,000至4,000、約介於1,000至3,000、或約介於1,000至2,500。如此一來，所得之寡聚物於有機溶劑中擁有良好的溶解度，增加其可加工性。反應物(b)可為至少一種具有式(I)結構的化合物、具有式(II)結構的化合物、具有式(III)結構的化合物、具有式(IV)結構的化合物、或上述之組合 其中，a可為0或1、以及，R1可獨立為H、或，其中，b可為0或1至6之整數(例如1、2、3、4、5、或6)、c可為0或1、d可為0或1至6之整數(例如1、2、3、 4、5、或6)。舉例來說，R1可例如為或。根據本揭露實施例，若反應物(b)為具有式(IV)結構的化合物，則至少一R1可不為氫。
根據本揭露實施例，該反應物(b)可為、 、或上述之組合。
根據本揭露實施例，該反應物(a)可為反應物(c)及反應物(d)之反應(例如加成聚合反應)產物。其中，該反應物(c)可為至少一種具有式(V)結構的化合物、具有式(VI)結構的化合物、或上述之組合 其中，R2可獨立為C5-10烷基，舉例來說，R2可獨立為直鏈或分支(linear or branched)烷基，例為直鏈或分支具有5、6、7、8、9、或 10個碳的烷基。根據本揭露某些實施例，該反應物(c)可為、 、、或上述之組合。該反應物(d)可為至少一種具有式(VII)結構的化合物 其中，e係0或1至10之整數(例如e係1、2、3、4、5、6、7、8、9、 或10)。根據本揭露某些實施例，該反應物(d)可為、 、、或上述之組合。
根據本揭露實施例，該反應物(c)及該反應物(d)之重量比可約為1：10至10：1，例如約為1：10至5：1、約為1：10至3：1、約為1：10至1：1、約為1：5至5：1、約為1：5至3：1、或約為1：5至1：1。若該反應物(c)及該反應物(d)的重量比過低，則所得的寡聚物分子量可能較低且產率差；若該反應物(c)及該反應物(d)的重量比過高，則所得的寡聚物分子量可能過大且溶解度差不易加工。
根據本揭露實施例，該反應物(c)及該反應物(d)之重量比值可約介於1：10至1：1之間，以使所得寡聚物於有機溶劑中擁有良好的溶解度，並使得包含該寡聚物之組成物更有利於後續的製程(例如：將該組成物塗佈於一基材上、或是將一基材含浸於該組成物中)。
根據本揭露實施例，該反應物(c)及該反應物(b)之重量比可約為1：1至20：1，例如約為1：1至15：1、約為1：1至10：1、約為1：1至9：1、約為3：1至15：1、約為3：1至10：1、或約為3：1至9：1。若該反應物(c)及該反應物(b)的重量比過低，則可能難以形成枝狀結構寡聚物；若該反應物(c)及該反應物(d)的重量比過高，則可能導至寡聚物分子量過大、溶解度不佳不易加工。
根據本揭露實施例，當該反應物(c)及該反應物(d)之重 量比值約介於1：10至1：1之間(例如約介於1：5至1：1之間)、及/或該反應物(c)及該反應物(b)之重量比值約介於1：1至10：1之間(例如約介於3：1至10：1之間)，該寡聚物於室溫下可完全溶解於重量與該寡聚物相同的甲苯中。根據本揭露實施例，經由該反應物(b)、反應物(c)、及該反應物(d)之比例調配，可控制組成物(包含該寡聚物與一交聯劑)所得之固化物的性質，例如，具有較低的介電常數(dielectric constant、Dk)及耗散因子(dissipation factor、Df)。
根據本揭露實施例，上述寡聚物的製備方式可包含：先將反應物(c)與該反應物(d)反應並維持一第一時間形成反應物(a)(反應物(c)與反應物(d)的加成反應產物)，接著加入該反應物(b)與反應物(a)進行反應(例如加成反應)，並維持一第二時間。根據本揭露實施例，上述寡聚物的製備方式可包含：先將反應物(c)與該反應物(d)在一觸媒組成物存在之下進行反應並維持一第一時間形成反應物(a)(反應物(c)與反應物(d)的加成反應產物)，接著加入該反應物(b)與反應物(a)進行加成反應，並維持一第二時間。其中，該第一時間可例如約為數分鐘至48小時(例如約為30分鐘至10小時或約為1小時至8小時)，而該第二時間可例如約為24小時至72小時。根據本揭露實施例，可藉由控制該第一時間來調整所獲得之反應物(a)的分子量，進而達到控制所得寡聚物分子量的目的。此外，該寡聚物分子量係可藉由該第二時間加以控制。
根據本揭露實施例，該觸媒組成物可包含一加成聚合觸媒，例如，含鈦之觸媒、含鋯之觸媒、含鈀之觸媒、含鋁之觸媒、或上述之組合。此外，該觸媒組成物可進一步包含一助催化劑、一 鏈轉移劑、或上述之組合。根據本揭露實施例，本揭露對於所使用的加成聚合觸媒、助催化劑、及鏈轉移劑並無特別之限制，可為習知用來進行環烯烴加成聚合的加成聚合觸媒、助催化劑、及鏈轉移劑。
根據本揭露實施例，本揭露亦提供一種組成物，包含100重量份之上述寡聚物，以及約20-110重量份之交聯劑(例如約20-100重量份之交聯劑、約30-100重量份之交聯劑、或是約40-100重量份之交聯劑)。該交聯劑可為小分子型交聯劑、寡聚物型交聯劑、高分子型交聯劑、或上述之組合。舉例來說，該交聯劑可例如為乙二醇二甲基丙烯酸酯(ethylene glycol dimethacrylatev、EGDMA)、1,4-丁二醇二丙烯酸酯(1,4-butanediol diacrylate)、三聚氰酸三烯丙基酯(triallyl cyanurate)、三烯丙基異三聚氰酸酯(triallyl isocyanurate、TAIC)、三甲代烯丙基異三聚氰酸酯(trimethallyl isocyanurate、TMAIC)、丙烯酸丁酯(butyl acrylate)、丙烯酸-2-羥乙基酯(2-Hydroxyethyl Acrylate)、鄰苯二甲酸二烯丙酯(diallyl phthalate)、間苯二甲酸二烯丙酯(diallyl isophthalate)、對苯二甲酸二烯丙酯(diallyl terephthalate)、丙烯酸羥丙酯(hydroxypropyl acrylate)、甲基丙烯酸羥乙酯(2-hydroxyethyl methacrylate)、聚順丁烯二酸(hydrolyzed polymaleic anhydride)、1,2,4-苯三甲酸三烯丙酯(1,2,4-triallyl trimellitate)、二乙烯苯(divinylbenzene)、或上述之組合。
根據本揭露實施例，本揭露所述組成物，可進一步包含20-200重量份之樹脂(例如約20-180重量份之樹脂、約20-160重量 份之樹脂、20-100重量份之樹脂、或約40-200重量份之樹脂)。該樹脂可例如習知作為印刷電路板材質之樹脂，且本揭露所述之寡聚物與該等樹脂具有良好之可相容性，因此在將樹脂與本揭露所述寡聚物混合形成本揭露所述組成物時，不易有相分離的現象發生。舉例來說，該樹脂可為環氧樹脂(epoxy resin)、氰酸酯樹脂(cyanate resin)、苯酚樹脂(phenol resin)、酚醛樹脂(novolac resin)、聚苯乙烯樹脂(polystyrene resin)、苯乙烯丁二烯共聚物樹脂(styrene-butadiene copolymer resin)、聚醯胺樹脂(polyamide resin)、聚醯亞胺樹脂(polyimide resin)、馬來醯亞胺(maleimide)樹脂、雙馬來醯亞胺(bismaleimide)樹脂、聚苯醚樹脂(polyphenylene ether resin)、或上述之組合。
根據本揭露實施例，本揭露所述之組成物可更包含1-30重量份之添加劑(例如約1-25重量份之添加劑、或約1-20重量份之添加劑)，其中該添加劑可為起始劑、硬化劑、平坦劑、填充物、色料、消泡劑、耐燃劑、或上述之組合。
根據本揭露實施例，該起始劑可為過氧化物起始劑，例如苯甲醯基過氧化物(benzoyl peroxide)、1,1-雙(第三丁基過氧基)環己烷(1,1-bis(tert-butylperoxy)cyclohexane)、2,5-雙(第三丁基過氧基)-2,5-二甲基環己烷(2,5-bis(tert-butylperoxy)-2,5-dimethylcyclohexane)、2,5-雙(第三丁基過氧基)-2,5-二甲基-3-環己炔(2,5-bis(tert-butylperoxy)-2,5-dimethyl-3-cyclohexyne)、雙(1-(第三丁基過氧基)-1-甲基乙基)苯 (bis(1-(tert-butylpeorxy)-1-methy-ethyl)benzene)、第三丁基過氧化氫(tert-butyl hydroperoxide)、第三丁基過氧化物(tert-butyl peroxide)、第三丁基過氧基苯甲酸(tert-butyl peroxybenzoate)、茴香基過氧化氫(Cumene hydroperoxide)、環己酮基過氧化物(cyclohexanone peroxide)、二茴香基過氧化物(dicumyl peroxide)、月桂基過氧化物(lauroyl peroxide)、或上述之組合。
根據本揭露實施例，該硬化劑可視選用的樹脂種類做調整，例如可為咪唑(imidazole)化合物，例如2-十一烷基咪唑(2-undecylimidazole)、2-十七烷基咪唑(2-heptadecylimidazole)、2-甲基咪唑(2-methylimidazole)、2-乙基-4-甲基咪唑(2-ethyl-4-methylimidazole)、2-苯基咪唑(2-phenylimidazole)、2-苯基-4-甲基咪唑(2-phenyl-4-methylimidazole)、1-苯甲基-2-甲基咪唑(1-benzyl-2-methylimidazole)、1-苯甲基-2-苯基咪唑(1-benzyl-2-phenylimidazole)、1，2-二甲基咪唑(1,2-dimethylimidazole)、1-氰基乙基-2-甲基咪唑(1-cyanoethyl-2-methylimidazole)、1-氰基乙基-2-乙基-4-甲基咪唑(1-cyanoethyl-2-ethyl-4-methylimidazole)、1-氰基乙基-2-十一烷基咪唑(1-cyanoethyl-2-undecylimidazole)、1-氰基乙基-2-苯基咪唑(1-cyanoethyl-2-phenylimidazole)、1-氰基乙基-2-十一烷基咪唑偏苯三酸鹽(1-cyanoethyl-2-undecyl imidazolium trimeritate)、1-氰基乙基-2-苯基咪唑偏苯三酸鹽(1-cyanoethyl-2-phenyl imidazolium trimeritate)、2-苯基-4，5-二羥基甲基咪唑(2-phenyl-4,5-dihydroxymethylimidazole)、2-苯基-4-甲基-5-二羥基 甲基咪唑(2-phenyl-4-methyl-5-dihydroxymethylimidazole)、或上述之組合。
根據本揭露實施例，該耐燃劑可為含溴或含磷耐燃劑，而填充劑可為有機粉體或無機粉體，例如Al(OH)3、Al2O3、Mg(OH)2、MnO2、SiO2、或聚亞醯胺粉體。
根據本揭露實施例，由於本揭露所述組成物包含上述寡聚物，因此該組成物的固化產物具有較低的介電常數(dielectric constant、Dk)及耗散因子(dissipation factor、Df)，適合作為高頻基板材料。
根據本揭露實施例，本揭露亦提供一種複合材料。該複合材料可包含上述組成物所形成之固化物或半固化物；以及一基材，其中該固化物或半固化物係位於該基材之上或位於該基材之中。根據本揭露實施例，該基材可為玻璃纖維、或銅箔。舉例來說，該複合材料可包含一預浸片，而該預浸片之製備方式係將一玻璃纖維(作為基材)含浸於上述組成物中。接著，對該組成物進行半固化，得到該預浸片。此外，該複合材料可進一步包含一銅箔，而該複合材料可為銅箔基板、或印刷電路板。
為了讓本揭露之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉數實施例及比較實施例，作詳細說明如下：
寡聚物之製備
實施例1
首先，將18克之降冰片烯(norbornene)(191.18mmol)(作為反應物(c))、18克之乙烯基降冰片烯(vinyl norbornene)(146.76mmol)(作為反應物(d))、以及150毫升之二氯甲烷(CH2Cl2)混合，得到一第一溶液。接著，將0.6克之雙(丙腈)-氯化鈀(II)(bis(propanenitrile)dichloropalladium(II))、0.312毫升之丙腈(propanenitrile)、以及150毫升之二氯甲烷(CH2Cl2)在氮氣下加入一反應瓶中。均勻攪拌後，加入1.3克六氟銻酸銀(AgSbF6)於該反應瓶中。接著，攪拌30分鐘後，將第一溶液加入該反應瓶中。攪拌2小時後，加入2克之降冰片二烯(21.71mmol)(作為反應物(b))於該反應瓶中。接著，攪拌48小時後，經純化、再結晶與過濾收集沉澱物，並將所得沉澱物於60℃下進行烘乾，收集產物，得到寡聚物(1)。以SEC/MALS/VIS分支率量測法測得寡聚物(1)之分枝率(branching ratio)約為73%，表示具有枝狀結構。接著，量測寡聚物(1)之數目平均分子量(Mn)、及分子量分布值(polydispersity index、PDI)，結果如表1所示。
實施例2
依實施例1所述的方式進行，除了將降冰片烯的重量由18克增加至27克，而將乙烯基降冰片烯的重量由18克降低至9克，得到寡聚物(2)。接著，量測寡聚物(2)之數目平均分子量(Mn)、及分子量分布值(polydispersity index、PDI)，結果如表1所示。
實施例3
依實施例1所述的方式進行，除了將降冰片烯的重量由18克增加至24克，而將乙烯基降冰片烯的重量由18克降低至12克，得到寡聚物(3)。接著，量測寡聚物(3)之數目平均分子量(Mn)、及分子量分布值(polydispersity index、PDI)，結果如表1所示。
實施例4
依實施例1所述的方式進行，除了將降冰片烯的重量由18克降低至12克，而將乙烯基降冰片烯的重量由18克增加至24克，得到寡聚物(4)。以SEC/MALS/VI分支率量測法測得寡聚物(4)之分枝率(branching ratio)約為68%，表示具有枝狀結構。接著，量測寡聚物(4)之數目平均分子量(Mn)、及分子量分布值(polydispersity index、PDI)，結果如表1所示。
實施例5
依實施例1所述的方式進行，除了將降冰片烯的重量由18克降低至9克，而將乙烯基降冰片烯的重量由18克增加至27克，得到寡聚物(5)。接著，量測寡聚物(5)之數目平均分子量(Mn)、及分子量分布值(polydispersity index、PDI)，結果如表1所示。
實施例6
依實施例1所述的方式進行，除了將降冰片烯的重量由18克降低至7.2克，而將乙烯基降冰片烯的重量由18克增加至28.8克，得到寡聚物(6)。接著，量測寡聚物(6)之數目平均分子量(Mn)、及分子量分布值(polydispersity index、PDI)，結果如表1所示。
實施例7
依實施例1所述的方式進行，除了將降冰片烯的重量由18克降低至6克，而將乙烯基降冰片烯的重量由18克增加至30克，得到寡聚物(7)。接著，量測寡聚物(7)之數目平均分子量(Mn)、及分子量分布值(polydispersity index、PDI)，結果如表1所示。
實施例8
依實施例1所述的方式進行，除了將降冰片二烯置換為雙環戊二烯(dicyclopentadiene)，得到寡聚物(8)。接著，量測寡聚物(8)之數目平均分子量(Mn)、及分子量分布值(polydispersity index、PDI)，結果如表1所示。
實施例9
依實施例1所述的方式進行，除了將降冰片二烯置換為 化合物(1)(結構為)，得到寡聚物(9)。接著，量測寡聚物(9)之數目平均分子量(Mn)、及分子量分布值(polydispersity index、PDI)，結果如表1所示。
實施例10
依實施例1所述的方式進行，除了將降冰片二烯置換為 化合物(2)(結構為)，得到寡聚物(10)。接著，量測寡聚物(10)之數目平均分子量(Mn)、及分子量分布值(polydispersity index、PDI)，結果如表1所示。
實施例11
首先，將3克之化合物(3)(結構為 )(7.5mmol)、9克之乙烯基降冰片烯(vinyl norbornene)(75mmol)、以及60毫升之二氯甲烷(CH2Cl2)混合，得到 一第一溶液。接著，將0.239克之雙(丙腈)-氯化鈀(II)(bis(propanenitrile)dichloropalladium(II))、0.119毫升之丙腈(propanenitrile)、以及180毫升之二氯甲烷(CH2Cl2)在氮氣下加入一反應瓶中。均勻攪拌後，加入0.567克六氟銻酸銀(AgSbF6)於該反應瓶中。接著，攪拌30分鐘後，將第一溶液加入該反應瓶中。攪拌2小時後，加入0.67克之降冰片二烯(7.27mmol)於該反應瓶中。接著，攪拌24小時後，經純化、再結晶與過濾收集沉澱物，並將所得沉澱物於60℃下進行烘乾，收集產物，得到寡聚物(11)。接著，量測寡聚物(11)之數目平均分子量(Mn)、及分子量分布值(polydispersity index、PDI)，結果如表1所示。
比較例1
依實施例11所述的方式進行，除了不添加降冰片二烯，得到寡聚物(12)。接著，量測寡聚物(12)之數目平均分子量(Mn)、及分子量分布值(polydispersity index、PDI)，結果如表1所示。
比較例2
首先，將4.5克之化合物(3)(結構為 )(11.29mmol)(作為反應物(c))、2.7克之化 合物(4)(結構為)(7.98mmol)(作為反應物(c))、4.5克之降冰片烯(norbornene)(47.80mmol)(作為反應物(c))、以及30毫升之二氯甲烷(CH2Cl2)混合，得到一第一溶液。接著，將0.3 克之雙(丙腈)-氯化鈀(II)(bis(propanenitrile)dichloropalladium(II))、0.156毫升之丙腈(propanenitrile)、以及50毫升之二氯甲烷(CH2Cl2)在氮氣下加入一反應瓶中。均勻攪拌後，加入0.75克六氟銻酸銀(AgSbF6)於該反應瓶中。接著，攪拌30分鐘後，將第一溶液加入該反應瓶中。攪拌2小時後，加入1.3克之降冰片二烯(14.11mmol)(作為反應物(b))於該反應瓶中。接著，攪拌24小時後，經純化、再結晶與過濾收集沉澱物，並將所得沉澱物於60℃下進行烘乾，收集產物，得到寡聚物(13)。接著，量測寡聚物(13)之數目平均分子量(Mn)、及分子量分布值(polydispersity index、PDI)，結果如表1所示。
比較例3
依比較例2所述的方式進行，除了不添加降冰片二烯，得到寡聚物(14)。接著，量測寡聚物(14)之數目平均分子量(Mn)、及分子量分布值(polydispersity index、PDI)，結果如表1所示。
比較例4
依實施例1所述的方式進行，除了不添加降冰片二烯，得到寡聚物(15)。接著，量測寡聚物(15)之數目平均分子量(Mn)、及分子量分布值(polydispersity index、PDI)，結果如表1所示。
溶解度測試
量測實施例1至7所得之寡聚物(1)-(7)在溶劑中的溶解度。該在溶劑中的溶解度測試方式包含以下步驟。在室溫下將該寡聚物加入溶劑中，其中寡聚物與溶劑的重量比為1：1。在攪拌10分鐘後，觀察寡聚物溶解於溶劑之重量百分比，測試結果如表2所示。
由表2可得知，本揭露之實施例皆對有機溶劑有良好的溶解度，甚至當降冰片烯與乙烯基降冰片烯的比例小於1：1(例如介於1：1至1：5)之間時，所得寡聚物於有機溶劑中擁有更好的溶解度，增加其可加工性。
組成物及其固化物的性質量測
實施例12
將實施例1所得之寡聚物(1)(50重量份)及苯乙烯与丁 二烯的共聚物树脂(由Sartomer製造、商品編號Ricon 100、分子量4,500)(50重量份)加入一反應瓶中，並加甲苯(60重量份)作為溶劑。均勻混合後，加入40重量份之三烯丙基異氰脲酸酯(1,3,5-tri-2-propenyl-1,3,5-triazine-2,4,6(1H,3H,5H)-trione、TAIC)以及6重量份之起始劑(1,3-二(第三丁基過氧化異丙基)苯、由日油股份有限公司製造及販售、商品編號為Perbutyl P)於該反應瓶中，得到一組成物。接著，利用刮刀塗佈法(使用300μm刮刀、且塗佈機轉速為300rpm)將上述組成物塗佈於一銅箔(由古河銅箔製造及販售)上。接著，將塗佈有該組成物銅箔於氮氣中加熱至90℃維持30分鐘後，接著加熱至160℃維持10分鐘。接著，於氮氣中加熱至210℃維持2小時後，加熱至250℃維持4小時。最後，移除銅箔並將所得之固化物裁切，得到基材(1)(3mm×8cm)。
使用微波誘電分析儀(microwave dielectrometer，購自AET公司)於10GHz頻率下量測基材(1)的介電常數(dielectric constant、Dk)及耗散因子(dissipation factor、Df)，結果如表3所示。
比較例5
依實施例12所述的方式進行，除了將實施例1所得之寡聚物(1)以比較例4所得之寡聚物(15)取代，得到基材(2)。接著，使用微波誘電分析儀(microwave dielectrometer，購自AET公司)於10GHz頻率下量測基材(2)的介電常數(dielectric constant、Dk)及耗散因子(dissipation factor、Df)，結果如表3所示。
表3
由於實施例1所述之寡聚物(1)係進一步添加降冰片二烯進行加成聚合反應，所以寡聚物(1)具有枝狀結構(branched structure)。與線性寡聚物(例如寡聚物(15))相比，具有枝狀結構寡聚物(1)具有較低的結晶度(crystallinity)，因此分子量較易控制且溶解度良好，並顯現出良好的加工性。由表3可得知，與比較例5所述由線性寡聚物(15)製備的基材(2)相比，由於實施例12所述之基材(1)係由包含具有枝狀結構之寡聚物(1)所製備而得，因此所得之基材(1)有較低介電常數及較低介電損失因子。
本揭露之實施例寡聚物係有添加反應物(b)進行聚合反應，具有枝狀結構(branched structure)，其分支率約達50%以上。
實施例13
依實施例12所述的方式進行，除了將實施例1所得之寡聚物(1)以實施例8所得之寡聚物(8)取代，得到基材(3)。接著，使用微波誘電分析儀(microwave dielectrometer，購自AET公司)於10GHz頻率下量測基材(3)的介電常數(dielectric constant、Dk)及耗散因子(dissipation factor、Df)，結果如表4所示。
實施例14
依實施例12所述的方式進行，除了將實施例1所得之寡聚物(1)以實施例9所得之寡聚物(9)取代，得到基材(4)。接著，使用微波誘電分析儀(microwave dielectrometer，購自AET公司)於10GHz 頻率下量測基材(4)的介電常數(dielectric constant、Dk)及耗散因子(dissipation factor、Df)，結果如表4所示。
由表4可得知，由於寡聚物(8)-(9)與寡聚物(1)同樣具有枝狀結構，因此由寡聚物(8)-(9)所製備而得的基材亦具有較低介電常數及較低介電損失因子。
實施例15
依實施例12所述的方式進行，除了將實施例1所得之寡聚物(1)以實施例4所得之寡聚物(4)取代，得到基材(5)。接著，使用微波誘電分析儀(microwave dielectrometer，購自AET公司)於10GHz頻率下量測基材(5)的介電常數(dielectric constant、Dk)及耗散因子(dissipation factor、Df)，結果如表5所示。
實施例16
依實施例12所述的方式進行，除了將實施例1所得之寡聚物(1)以實施例5所得之寡聚物(5)取代，得到基材(6)。接著，使用微波誘電分析儀(microwave dielectrometer，購自AET公司)於10GHz頻率下量測基材(6)的介電常數(dielectric constant、Dk)及耗散因子(dissipation factor、Df)，結果如表5所示。
實施例17
依實施例12所述的方式進行，除了將實施例1所得之寡聚物(1)以實施例6所得之寡聚物(6)取代，得到基材(7)。接著，使用微波誘電分析儀(microwave dielectrometer，購自AET公司)於10GHz頻率下量測基材(7)的介電常數(dielectric constant、Dk)及耗散因子(dissipation factor、Df)，結果如表5所示。
比較例6
依實施例12所述的方式進行，除了將實施例1所得之寡聚物(1)以比較例1所得之寡聚物(12)取代，得到基材(8)。接著，使用微波誘電分析儀(microwave dielectrometer，購自AET公司)於10GHz頻率下量測基材(8)的介電常數(dielectric constant、Dk)及耗散因子(dissipation factor、Df)，結果如表5所示。
比較例7
依實施例12所述的方式進行，除了將實施例1所得之寡聚物(1)以比較例2所得之寡聚物(13)取代，得到基材(9)。接著，使用微波誘電分析儀(microwave dielectrometer，購自AET公司)於10GHz頻率下量測基材(9)的介電常數(dielectric constant、Dk)及耗散因子(dissipation factor、Df)，結果如表5所示。
比較例8
依實施例12所述的方式進行，除了將實施例1所得之寡聚物(1)以比較例3所得之寡聚物(14)取代，得到基材(10)。接著，使用微波誘電分析儀(microwave dielectrometer，購自AET公司)於10GHz頻率下量測基材(10)的介電常數(dielectric constant、Dk)及耗散因子(dissipation factor、Df)，結果如表5所示。
由表5可得知，由包含本揭露所述組成物(包含本揭露所述具有枝狀結構的寡聚物)所製備而得之基材，具有較低介電常數及較低介電損失因子。
由表3至表5可得知，由於本揭露所述之組成物包含本揭露所述之寡聚物，因此其固化產物具有較低的介電常數(dielectric constant、Dk)(小於或等於2.5(於10GHz時))及耗散因子(dissipation factor、Df)(小於或等於0.0020(於10GHz時))，適合作為高頻基板材料。
雖然本揭露已以數個實施例揭露如上，然其並非用以限定本揭露，任何本技術領域中具有通常知識者，在不脫離本揭露之精神和範圍內，當可作任意之更動與潤飾，因此本揭露之保護範圍當視後附之申請專利範圍所界定者為準。

Claims (20)

  1. 一種寡聚物，係為反應物(a)及反應物(b)之反應產物，其中該寡聚物之數目平均分子量係1,000至10,000；反應物(a)係反應物(c)及反應物(d)之反應產物；反應物(b)係具有式(I)結構的化合物、具有式(II)結構的化合物、具有式(III)結構的化合物、具有式(IV)結構的化合物、或上述之組合 其中，a係0或1、以及，R1係獨立為H、或，其中，b係0或1至6之整數、c係0或1、d係0或1至6之整數、以及至少一R1不為氫；反應物(c)係具有式(V)結構的化合物、具有式(VI)結構的化合物、或上述之組合 其中，R2係獨立為C5-10烷基；反應物(d)係具有式(VII)結構的 化合物 其中，e係0或1至10之整數。
  2. 如申請專利範圍第1項所述之寡聚物，其中該反應物(c)及該反應物(d)之重量比係1：10至10：1。
  3. 如申請專利範圍第1項所述之寡聚物，其中該反應物(c)及該反應物(d)之重量比係1：10至1：1。
  4. 如申請專利範圍第3項所述之寡聚物，其中該寡聚物於室溫下係完全溶解於重量與該寡聚物相同的甲苯中。
  5. 如申請專利範圍第1項所述之寡聚物，其中該反應物(c)及該反應物(b)之重量比係1：1至20：1。
  6. 如申請專利範圍第1項所述之寡聚物，其中該反應物(c)及該反應物(b)之重量比係1：1至10：1。
  7. 如申請專利範圍第1項所述之寡聚物，其中該反應物(b)係。
  8. 如申請專利範圍第1項所述之寡聚物，其中該反應物(b)係。
  9. 如申請專利範圍第1項所述之寡聚物，其中該反應物(b) 係。
  10. 如申請專利範圍第1項所述之寡聚物，其中該反應物(c)係或。
  11. 如申請專利範圍第1項所述之寡聚物，其中該反應物(d)係、、、、、、、或上述之組合。
  12. 一種組成物，包含：100重量份之申請專利範圍第1項所述寡聚物；以及20-110重量份之交聯劑。
  13. 如申請專利範圍第12項所述之組成物，其中該交聯劑係乙二醇二甲基丙烯酸酯(ethylene glycol dimethacrylatev、EGDMA)、1,4-丁二醇二丙烯酸酯(1,4-butanediol diacrylate)、三聚氰酸三烯丙基酯(triallyl cyanurate)、三烯丙基異三聚氰酸酯(triallyl isocyanurate、TAIC)、三甲代烯丙基異三聚氰酸酯(trimethallyl isocyanurate、TMAIC)、丙烯酸丁酯(butyl acrylate)、丙烯酸-2-羥乙基酯(2-Hydroxyethyl Acrylate)、鄰苯二甲酸二烯丙酯(diallyl phthalate)、間苯二甲酸二烯丙酯(diallyl isophthalate)、對苯二甲酸二烯丙酯(diallyl terephthalate)、丙烯酸羥丙酯(hydroxypropyl acrylate)、甲基丙烯酸羥乙酯(2-hydroxyethyl methacrylate)、聚順丁烯二酸(hydrolyzed polymaleic anhydride)、1,2,4-苯三甲酸三烯丙酯(1,2,4-triallyl trimellitate)、二乙烯苯(divinylbenzene)、或上述之組合。
  14. 如申請專利範圍第12項所述之組成物，更包含：1-200重量份之樹脂。
  15. 如申請專利範圍第14項所述之組成物，其中該樹脂係為環氧樹脂(epoxy resin)、氰酸酯樹脂(cyanate resin)、苯酚樹脂(phenol resin)、酚醛樹脂(novolac resin)、聚苯乙烯樹脂(polystyrene resin)、苯乙烯丁二烯共聚物樹脂(styrene-butadiene copolymer resin)、聚醯胺樹脂(polyamide resin)、聚醯亞胺樹脂(polyimide resin)、馬來醯亞胺(maleimide)樹脂、雙馬來醯亞胺(bismaleimide)樹脂、聚苯醚樹脂 (polyphenylene ether resin)、或上述之組合。
  16. 如申請專利範圍第12項所述之組成物，更包含：1-30重量份之添加劑。
  17. 如申請專利範圍第16項所述之組成物，其中該添加劑係起始劑、硬化劑、平坦劑、填充物、色料、消泡劑、耐燃劑、或上述之組合。
  18. 一種複合材料，包含：申請專利範圍第12項所述組成物所形成之固化物或半固化物；以及一基材，其中該固化物或半固化物係位於該基材之上或位於該基材之中。
  19. 如申請專利範圍第18項所述之複合材料，其中該基材係玻璃纖維、或銅箔。
  20. 如申請專利範圍第18項所述之複合材料，其中該複合材料係銅箔基板、或印刷電路板。
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