TW201203533A - An optoelectronic device - Google Patents

Abstract

An optoelectronic device comprising: a substrate; a plurality of semiconductor units electrically connected with each other and disposed jointly on the substrate, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between thereof; a plurality of first electrodes disposed on each first semiconductor layer respectively; and a plurality of second electrodes disposed on each second semiconductor layer respectively, wherein at least one of the first electrodes comprises a first extension, and at least one of the second electrodes comprises a second extension, wherein at least one of the first extension and the second extension comprises a curve which is not parallel to the edge of the semiconductor units.

Description

201203533 VI. Description of the Invention: [Technical Field to Be Invented] The present invention relates to an array of light-emitting elements. [Prior Art]

1 Since the light-emitting diode in the solid-state lighting element has good photoelectric characteristics such as low power consumption, low heat generation, long operating life, impact resistance, small volume, fast reaction speed, and color light which can emit stable wavelength, it has been widely used. Used in home appliances, instrument indicators, and optoelectronic products. In the development of optoelectronic technology, solid-state lighting components focus on their luminous efficiency, operating life and brightness, which will become the line of lighting in the future. The Vision LED is used in the form of an array type illuminating element, which is applied to the 咼 driving voltage and can reduce the volume of the LED. The LED manufacturer has different designs for the array type illuminating element to satisfy the customer's high driving voltage LED. Demand to reduce costs and increase production efficiency. SUMMARY OF THE INVENTION The photo-electric component of the present invention comprises a substrate; a plurality of semi-conducting electrodes are electrically connected to each other, and the semiconductor unit is disposed on the substrate, and the semiconductor unit comprises a main channel; Each of the first electrodes is provided with a single opening; a first extension portion and a second electrical body sheet ϊ ΐ ΐ ί ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ; ; ; ; ; ; 201203533 includes the first semiconductor layer of the first one - the second semiconductor is located between the first semiconductor and the second semiconductor = 'the plurality of first electrodes respectively lead to - the first conductive portion is formed by a plurality of semi-excited ones The plurality of semiconductor units are connected in series; and the plurality of electrodes are respectively disposed on the second semiconductor layer; wherein the poles include a first extension portion and a second portion (2) extension portion, wherein The driving unit of the plurality of semiconductor units proposes that the photovoltaic element includes a substrate; a plurality of semiconductors are electrically connected and located on the substrate, and the t: region is fixed by the second semiconductor. Unit, and a third half a plurality of first electrode pads are located on the outermost surface of the substrate, and at least one of the second electrodes, the second semiconductor unit, the first electrode and the first electrode The first extension portion and the first extension portion are included on the third semiconductor unit without the electrode turns. The cells are electrically connected to each other with the second active j region interposed therebetween; and the plurality of first electrodes are respectively located in the plurality of semiconductor single cells including the -th semiconductor unit, the second half; the conduction = conductor unit, At least one of the electrodes includes a second semiconductor layer of the first semiconductor unit, and a second semiconductor layer of the second semiconductor unit. (2) 201203533 includes: an extension portion and a second extension portion are located on the electrodeless pad On the two + conductor unit. [Embodiment] J 1 is a diagram showing a photovoltaic element according to an embodiment of the present invention. The photovoltaic element 10, such as a light emitting diode (LED), a laser diode, or a solar cell, includes a plurality of semiconductor unit patterns U, a first electrode 141, and a second electrode H2 formed on the semiconductor unit. In this embodiment, G is a light-emitting diode (LED). 2 is a view showing a composition of a first semiconductor layer 121, a second semiconductor '122, and an active layer between the first and second semiconductor layers. a doped Ρ-type Πΐ-ν semiconductor material, a second semiconductor layer 123, a first-doped ρ-type or Π-type impurity III-V semiconductor: a semiconductor layer 121 and a second semiconductor layer 123 The structure of the structure: Λ, 122 can be formed in the semiconductor unit by a single heterostructure (SH), a double junction, and exposed to the semiconductor layer 121. A plurality of divided tracks (1) form if/, and a part of the substrate 11 is exposed. The photo-electric element 10f has a plurality of first electrodes 141 and second electrodes 142, wherein the first and the first electrodes are formed on the exposed first semiconductor layer 121, and the first and second layers are formed on the second semiconductor layer 123. on. The first includes a first extension 1411, and the second electrode 142 includes a semiconducting = extension. Further, a 1412 of the plurality of semiconductor units has a first electrode 141 including a -first electrode pad. Electricity; = solid 2 second electrode on the semiconductor unit 201203533 electromotive power = specific area, current and drive design on the original electric bellows, ^ T page special or (axe +1) to design ' * Lieutenant: conductor early 兀The number of V, 矣氺 Φ - Μ ^ 丨 ~ Yi Qian, etc.

The main channel 舻ϋ M id Ge table first 70 pieces of driving voltage, Vf represents + drive early 7C driving voltage. In this embodiment: J 3 Xiaxiao 2828mi12, the driving voltage is 72v. Every-half: moving, as the process control and the quality of the worm layer, the lower the driving voltage of the semiconductor unit is, the better the electrical efficiency of the photovoltaic element is. The area of each semiconductor unit is approximately: In accordance with the above formula, the photovoltaic element 10 includes 24 + conductors, which are disposed in rows 105, 106, 107, 1〇8, and 109, respectively. The first row 105 includes five semiconductor units, 153, 154, and 155' connected in series in a first direction; the second row 1 〇6 includes five semiconductor units 16 162, 163, 164, and 165. The first row 107 is connected in a second direction; the third row 107 includes four semiconductor units Π1, 172, 173, and 174 connected in series in a first direction; the fourth row 108 includes five semiconductor units ι81, ι82, ι83, ι84, and 185' is connected in series in the second direction; the fifth row 1〇9 includes five semiconductor units 191, 192, 193, 194, and 195' connected in series in the first direction. The first direction and the second direction are opposite, and the layout of the semiconductor unit, which does not include a different number of semiconductor units, makes it easier to configure the customer's needs. In the third row 107, the outer shape of the semiconductor unit is rectangular and different from the shape of the semiconductor unit in the other rows, and the design of the electrode can be made easier by such a design. Referring to Figs. 1 and 3, in the first row 105 and the fifth row 109, the electrode layouts on the other semiconductor units are similar except for the semiconductor units 151, 155, 191, and 195 located in the corner regions of the substrate 11. In the second row 201203533 106 and the fourth row 108, the arrangement of the electrodes on the semiconductor unit is the same except for the semiconductor elements f 161, 165, 181, and 185 which are close to the edge of the substrate u. The semiconductor cell in the third row has a different electrode layout than the semiconductor cells in the other rows, but the electrode layout on the semiconductor cells 172 and 173 is the same, and the semiconductor cell located at the edge of the substrate 11 171 and 174 are different. The first extension 1411 includes a first curved extension

Ha; the second extension portion 1421 includes a second curved extension portion 1421a, and the second extension portion on the rows 105, 1〇6, 1〇8, and 1〇9 further includes a linear extension portion 1421b, a line extension portion 1411& And/or the second curved extension i42ia ', either side of the semiconductor unit is not parallel to each other. The first extension 邛 1411 on the semiconductor units of the first, third, and rows 105, 107, and 1 位于 9 is located in the trench 17〇, and: the second side of the opposite side extends, and the second extension leads the second guide The second side extends toward the first side. The first extension 1411 on the first semiconductor of the core semiconductor is from the guide = the first side to the second side ^ = ^ edge = (2) 疋 trench 170 t ' with the first semiconductor, 121 Leib [h: Conductor: The number of parts can be semi-conductive: 罝21 is electrically connected. The area of the extension element is large, and the if product is adjusted. If the semiconductor is made from the Hi! The extension portion may also extend a second order ^H42ie' extending from the ridge line extension 14213 to increase current dispersion. On the semiconductor units 155 and 191 on the opposite corners of the substrate 11 乂 41·2 and the second electrode pad 1422, the 201203533 first electrode 塾 1412 is in contact with the 1411 on the semiconductor unit 155, and the second electrode 塾 1422 is The second extension portion H21 of the semiconductor unit is in contact with each other, and the electrode pads are preferably arranged on different outermost semiconductor units on the outermost side of the substrate 11. In order to electrically connect the individual semiconductor units, a connection is thus formed between the individual semiconductor units, for example, the connection portion Γ is connected to: the first extension i4n on the body unit and the adjacent J example The part (4) is formed between the first, third, and seventh L10: a series connection in the first direction, and a reverse connection in the second direction between the second and fourth lines and 108. The semiconductor units 151 and 161 and the Π4, 171 and 181, and 185 and 195 are connected in series by the connecting portion 143. There are two in each of the first two CMOS devices: 〇5, 106, 108, and 109. The connection portion 143 exists therebetween, between the two rows of the semiconductor unit between the first row and the first row A connecting portion 143 is present in the basin. FIG. 4 is a second semiconductor layer 123 and a second electrode of the equivalent photovoltaic element 10 of the photovoltaic element 1G shown in FIG. 1 and may further comprise a transparent conductive layer. The material of the transparent conductive layer is an oxidized material such as copper tin oxide (IT〇), cadmium tin oxide, lanthanum tin oxide, indium zinc oxide, zinc aluminum oxide, or zinc tin oxide. Further, when a metal layer has a thickness which allows light to pass therethrough, it can also function as a transparent conductive layer. Between the substrate 11 and the first semiconductor layer 121, a double-layered layer may be further included to bond the semiconductor unit to the substrate 11. The bonding layer U is an insulating transparent bonding layer or a conductive transparent bonding layer; if it is an insulating transparent bonding layer, the material may be p〇lyimide, 201203533 i: ϊ : m λ? fluororing butyl cb) If it is a conductive genus, ιΐ, its material can be * metal oxide material or! fCTm belongs to "Oxidation material contains indium tin oxide (ΙΤ0), oxidized cadmium tin. i PCT recording tin, oxidation _, zinc oxide 1 Lu, or oxidation recording material containing gold, titanium, chromium, sho, or 2 2 2 = between the individual semiconductor units, and the exposed portion; i, through the layer. When the bonding layer is a conductive junction i

Each of the semi-through electrical bonding layers exposes the germanium substrate 11 such that the two conductors 2 are folded; the substrate 21 is multiplexed; 5 can be two, and the first electrode 241, the second electrode 242, and the connection 243 are formed in the semiconductor unit. The same as the pre-electrical device 10, including the first; the semiconductor layer 123, and the first and the semiconductor unit formed on each of the 241 «^9 electric components 20 having a plurality of first electrodes exposed The first 形成1 is formed in the violent mu pole 242 and includes a second extension portion 2421. = Bao Lei contains: a first electrode 塾 2412, and the first electrode 242 on the other - half (two) 兀 includes a second electrode pad 2422. In the present embodiment, the size of the photo-electric element 2 is 85 volts and the voltage is 72 V. The area of each semiconductor unit is substantially the same as each other. According to the above formula (special light 2 〇 includes 23 semiconductor units, respectively arranged in a row 205, 206, 201203533 2 〇 7, 208, and 209 巾. The first line 205 contains the five 252, 253, 254, * 255 toward a first. The direction of the mouth is early and the electrode layout and the photoelectric element 1 thereon 〇The first row 1〇5 The conductors on the conductor single 7L have the same layout; the second row is 2〇6 guides, the units 261, 262, 263, and 264 are the second month, the third is the three-way four-string ^+ and The electrode layout is the same as the electrode layout on the third row 1〇7 conductor unit of the photovoltaic element 1; the third row 2〇7 侗 conductor unit 27 272, 273, 274 ' and 275 ;; 2 2 in series, and above The electrode layout is the same as the electrode layout on the semiconductor unit in the first component of the photo-electric element 1; the:: semiconductor unit 281, 282, 283, and 284 "〇" = serially connected, and the electrode layout and the photo-electric component 1Q thereon The electrode layout on the semiconductor unit in the third row 1〇 is the same; the fifth row is five semiconductor sheets Yuan 29 292, 293, 294, 〇 〇 〇 59U direction is connected in series, and the layout of the electrodes thereon is the same as the electrode layout on the semiconductor unit in the row 105 of the photovoltaic element 1 θ in the second and fourth rows In 2, 6, 208, the outer shape of the semiconductor unit is rectangular and different from the shape of the semiconductor unit in other rows. Reference; FIGS. 5 and 6, the semiconductor of the first row 205, the third row 207, and the fifth row 209 The electrode layout on the cell, except for the semiconductors m 275, 291, and 295, the electrode layouts on other semiconductor cells are substantially similar to each other; the electrode layout on the semiconductor cells of the second row 206 and the fourth row 208 The electrode layouts on the other semiconductor units are substantially identical to each other except for the electrodes on the semiconductor units 261, 264, 281, and 284. The first extension portion 2411 includes a first curved extension portion 2411a, and the second extension portion A second curved extension 2421a is included. On the semiconductor units of rows 205, 207, and 209, the second extension 2421 further includes a linear extension 2421b; the first curved extension 241la is uneven from the second curved extension 2421a. On the half 201203533

Either side of a conductor unit. The first extensions 2411 on the first, third, and fifth rows 2〇5, 2〇7, 209 semiconductor units are disposed on the first, conductor layer 121, and from the first side of the semiconductor unit to the first side The second side extends, and the second extension 2421 extends from the second, first side. The first extension portion 2411 on the second and fourth rows of the second, second, and second semiconductor units extends from the second side of the semiconductor unit toward the first side, and the second extension portion 2421 is from the first side to the first side. extend. In this embodiment, the second extension portion 2421 is disposed substantially adjacent to the edge of the semiconductor unit, and the first extension portion MU is disposed in the semiconductor unit to be electrically connected to the first semiconductor layer. The extension may also form a second-order extension 2411c extending from the first curved extension 24Ua to increase current dispersion. The first electrode pad 2412 and the first electrode pad 2422 are respectively shaped; ί 2552291, the first electrode pad 2412 is connected to the first extension 2411 on the conductor 7L 255, and the second electrode pad 2412 is connected to the semiconductor unit 291. Two = Department ^ 】 US board. 21 亟 亟 系 系 — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — Between 2, 7, and 209, a first direction is formed: a string; five is formed by a ^ and four rows, 2 〇 6 and 2 〇 8 to form a second direction of the opposite ill 2. 61 each by the connecting portion 243 is connected in series with semiconductor unit 2 = 275, 271 * 281, and 284 and 295. There are two connecting portions 243 702? between the conductor units; ^ ^ ^ ^ ^ i , 62^3 " 光电2〇 equivalent circuit diagram, a semiconductor unit is formed on a substrate 31, 7-3; = number 201203533 body T element: ΐ ΐ 343 formed in the semiconductor unit semi-conductor including the first semiconductor layer 12, the second bobbin layer 123 And between the first and second semiconductors 1

ί "° a plurality of divided tracks 31] are formed on each of the half-body C electrodes 342, wherein the first Leimei λ41 4341 and the second are formed in the Feng guide ^, only one of the first extensions 3411 in the Feng conductor The semiconductor J-electrode other than the early 355 includes a first electrode pad 3412, and the second electrode 342 of the half-S early includes a second electrode ί W · 丨f ^ Embodiment _, the size of the photovoltaic element 30 is 50 Χ The driving voltage is 72V, and the driving voltage of the semiconductor unit is substantially the same as the area of the semiconductor element. 305 ^ 3〇 contains 23 semiconductor units, which are respectively arranged in row 07; 308, and 3〇9t. One row _including five 22 351, 352, 353, 354, and 355 are connected in series one; the second row 306 includes four semiconductor units 36, 63, and 364 connected in a second direction; 3 semiconductor units 371, 372, 373, 374, 〇 〇 37〇; two 1 ^ series; fourth row 308 includes four semiconductor units, 7; 2 i23, and 384 connected in series in the second direction; The fifth row 309 J Ϊ semiconductor units 391, 392, 393, 394, and 395 are connected in series in the first direction. In the second and fourth rows, 3〇6, 3〇8, The shape of the conductor unit is different from that of the semiconductor unit in the row. Refer to Figure 8 and the electrode layout on the conductor saponite of the third row 307, the third row 3〇7, and the fifth row 309, except Outside the electrodes on the semiconductor unit 351, '371' 375, 391, and 395, the electrode layouts on the other semiconductors 70 are substantially similar to each other; the electrodes on the semiconductor cells of the second row 201203533 306 and the fourth row 308 The layout is substantially identical to each other except for the electrodes on the semiconductor units 361, 364, 381, and 384. The first extension portion 3411 may be a curved extension portion 3411a disposed adjacent to the periphery of the substrate 31. The first extending portion 3411 may be a linear extending portion 3411b provided on the other semiconductor unit. The second extending portion 3421 may be an extending portion.

mouth. In the first, third, and fifth rows 305, 307, and 309, except for the semiconductor units 375, 395, the first extension portion 3411 on the other semiconductor unit is from the first side of the semiconductor unit to the first side. The two sides extend, and the second extending portion 3421 extends from the second side toward the first side. The 3411 on the semiconductor cells 375 and 395 extends from the third side of the semiconductor cell to the second side. In the second and fourth rows 306, 308, in addition to the semiconductor units 361, 381, the first extension 3411 on the conductor unit extends from the second side and the second extension 3421 is from the first side to the second side. extend. The first side of the first conductors 361 and 381 on the semiconductor units 361 and 381 extend to the curved portion of the first-i-th extension portion 3411 and the second extension portion of the semiconductor unit. In the present embodiment, the upper portion is adjacent to the edge of the semiconductor unit, and a half lead 35? φ H ΐ 3411 is placed in the semiconductor unit to be connected to the 34 nam. The extension may also be formed from a curved extension 3411c, a second-order extension extending from the extension/卩34Ub to increase current dispersion. The enthalpy and the second electrode pad 3422 are respectively shaped on the semi-conductors - 1 〇疋 55 and 391, and the second electrode pad 3422 and the flat conductor are on the 7C 391, and the ϋβ upper pad is used as the Ah green community Γί Extend 3 21 contact. The electrodes ', 妾s or flip-chip bonding are respectively disposed on different semiconductor units on the corner regions of the substrate 13 201203533. In the present embodiment, the 'connecting portion 343 forms a first direction of tandem between the first, third, and fifth rows 305, 307, and 309, and forms between the second and fourth rows 306 and 3〇8. A reverse connection in a second direction. The semiconductor units ^ and 361, 364 and 375, 371 and 381, and 384 and 395 are connected in series between the rows by the connecting portion 343. Between the two semiconductor units of the mother, there is a connection portion 343 present in the same figure. FIG. 10 is an equivalent electric power of the photovoltaic element 3A shown in FIG. 8. FIG. 11 is a view showing a photoelectric method according to a fourth embodiment of the present invention. The component is on the top view. . Referring to Fig. 1M2, the photovoltaic element is formed on the substrate 41 by the first electrode 41 and the connection portion 443 is formed on the semiconductor unit. The structure of the semiconductor unit includes a first semiconductor layer - and a first and a second semiconductor body with a plurality of first electrodes 441 and a second semiconductor unit formed outside the semiconductor unit 455 The upper / 1 of the semiconductor unit 471 and the opening 4 442 include a 筮 ... J + conductor early 70 on the second electrode element 455 on the outer 'formed on the semiconductor single and on the semiconductor unit 471 'pole Pad 4422. The upper electrode 442 is fused with a second electric power. In this embodiment, the size of the photoelectric element 4 是 is a driving voltage conductor unit of about Γ 3 v r & m48 w semiconductor unit, and the configuration is 4; The half line 55 is connected in series with the first direction; the second line includes six semiconductors 201203533, units 461, 462, 463, 464, 465, and 466 are connected in series in a second direction; the third line 407 includes five semiconductor units 47. 472, 473, 474, and 475 are connected in series in the first direction. The outer shape of the semiconductor unit in the first 402 is different from the shape of the semiconductor unit in the other rows; referring to FIG. 11 and FIG. 1, the electrode layout on the semiconductor unit of the first row 405 and the third row 407 is located in addition to the semiconductor unit 451, The electrode layouts of the other semiconductor units are substantially similar to each other except for the electrodes on 455, 471, and 475. The first extension 4411 includes a linear extension 44Ua and a second-order extension 4411c, wherein all of the second extensions 4421 are curved extensions. The first extending portion 4411 on the semiconductor unit of the first and second rows 4〇5, 4〇7 extends from the first side of the semiconductor unit to the third side and the fourth side adjacent to the first side, and The second extension portion 4421 extends from the second side to the third side and the fourth side. The first extension 4411 on the semiconductor unit of the second row = 06 extends from the second side of the semiconductor unit to the third side and the fourth side, and the second extension 4421 is from the first side to the third side. The fourth side extends. The curve extensions 4411 and 4421 are not parallel to either side of the semiconductor unit. First, the pad 4412 and the second electrode pad 4422 are respectively located on the semiconductor units 455 and 471, and the connecting portion 443 is formed in a single-series connection. Fig. 13 is an equivalent circuit diagram of the photovoltaic element 40 shown in Fig. 11. So eve? The Principality chart reveals that the photovoltaic element according to the fifth embodiment of the present invention is 上=upper view. Fig. 15 is a three-dimensional perspective view of the photovoltaic element 50. 36, the size is 4 〇 X4 〇 mU2, the driving voltage is 36V, the driving voltage of the + conductor unit is about ("?, in this embodiment, the photoelectric element 5 〇 contains the body early 兀, respectively, arranged in rows 505, 5 〇 6 and 5〇7 include four semiconductor units 551, 552, 553, and 554 in series, and the second row 506 includes three semiconductor units 15 201203533 561, 562, and 563 connected in a second direction; semiconductor unit 57 The first electrode 54 having the first extension portion 5411 is extended on the semiconductor unit other than the single mV54, and the first electrode 541 having "542 formed on all the semiconductor + conductor early 554" includes a first [The second _542 on the body unit 571 is formed between - in series. Figure 16 is an equivalent circuit diagram of Figure 5 in Figure 14. Figure 17 of the eDonkey reveals that it meets the sixth implementation of the case 160〇ί, 18f ® ^ ^ ^ .60^ 3D 4, « 24V, Semiconductor Army - 疋l2〇Xl2〇mi12, whose driving voltage is Λ) ' ^本In the embodiment, the electrical component 60 includes eight semiconductor diodes, which are disposed in rows 605, 6〇6, and 6〇7. 605 includes two semiconductor units 651 and 652 which are arranged in a first direction, and include six semiconductor units 66, 662, 663, ^f, which are connected in series in the second direction; the third line 6G7 includes two halves. The guide contains a first extension of the adjacent 64' / direction. The first electrode 641 is cut by the covering portion 6. In addition, the first electrode 641 on one of the plurality of semiconductors including the second extension unit 数 Μ = number + conductor early 包含 includes two first electrode pads and a second on the other semiconductor unit The electrode 642 includes two second electrodes 塾 6422. The connections are connected in series. Figure 19 is the 17th figure by: equal forging early: the equivalent circuit diagram of the shape. The photo-electric component 60 7 in the 17th figure is ίi. Figure 7 shows the photoelectric element of the seventh embodiment. The photoelectric element 70 is a small cow; 2〇:: a body image.疋120xl20mil, its driving voltage is 16 201203533; 4V 'the driving voltage of the semiconductor unit is about v == In the example, the photoelectric element 7〇 contains, the two elements = j are arranged in the line 7〇5, view, and 7〇 7 in. The first t3 two semiconductor units 751 and 752 include three semiconductor units 76, 762, and body units in a first direction 606. The third line 707 includes two semiconductors L connected in series in the first direction. The second electrode 742 of the first electrode 741 includes the second electrode 742 on the first fish port and the second electrode 742 includes two second series. The positive electrode 22 is in the semiconductor unit. The rib H of the photovoltaic element 70 shown in the first embodiment of the present invention is a three-dimensional view of the photovoltaic element 80 of the photoelectric element of the eighth embodiment of the present invention.

$, the driving power of the semiconductor unit is about 3V; = J / yuan match = real: the middle 'photovoltaic element 8° contains the elevation 02, 8〇3, 8〇4, 8〇5, 806 and 807 body unit toward the first 3 〇 〇 2, and 8 〇 7 respectively contain seven semi-conducting semi-conductors - ϊ ί ί contiguous; row 8 〇 2 and ' contain seven 疋!: direction concatenation; fourth line 804 contains Six semiconductor iUfs, the first A 2 842 of the early 4 包含 include a second electrode, and you are located on the first + conductor layer 123. In addition, the first electrode 841 of the extension portion is located on the semiconductor unit other than the first semiconductor unit; the device 17 201203533

The second electrode 842 of the second extension portion 8421 is located on all of the abundance bodies. The connecting portion 843 is connected to the semiconductor unit 8 of the semiconductor unit: the J-electrode pad 8412: the first electrode 841 of the j-near conductor early 812 is electrically connected, and the first unit of the semiconductor unit 871 where the pad 8422 is located | : The semiconductor is connected to the second electrode 842 of the bobbin 872 by the connecting portion 843 on the second half of the body layer 121. Fig. 25 shows a photoelectric m diagram in accordance with the ninth embodiment of the present invention. <<η Photoelectric element 9〇 contains 48 semiconductor units in the *, 2, 8〇3, 8〇4, 805, 806 and 807. The eighth electrode and the electrode arrangement are similar to those of the photo-electric element 8A, and the body is formed on the first photo 123 of the semiconductor unit 811. The connection portion 843 is connected to the semiconductor unit 812 by a connection 843. The second electrode 塾9422 It is formed on the second semiconductor layer 123 of the semiconductor early 871, and is formed in series with the second electrode 842 of the semiconductor unit 872 by ^43. Various. When the P power supply current is injected from the second electrode pad 9422 and outputted by the first electrode pad 9412, the resistance of the semiconductor unit 871 is greater than the second electrode 842 of the second electrode pad 9422 and the connection portion 843 and the semiconductor: 872 Series resistance, so current flows directly from the first electrode pad 9422 via the connection portion 843 to the semiconductor unit

The first electrode 841 of 12 does not flow to the first semiconductor layer 121, the active region 122, and the second semiconductor layer 123 of the semiconductor unit SB. The same current flows to the first electrode 841 of the semiconductor unit 812, and flows to the first electrode pad 9412 via the connection portion 843, and does not flow to the first half 121 below the semiconductor unit 811, the active region 122, and the second semiconductor layer. 123, but output directly to the external power supply. Therefore, the semiconductor elements 811 and 871 under the first electrode pad 9412 and the second electrode pad 9422 do not generate light. 18 201203533 In order to further electrically isolate the formation of the electrode pads: a layer avoidance = short circuit of the semiconductor layer under the pad. Semi-conductive and under the second electrode pad 9422

The area of the element 811 is substantially equal, and the second electrode pad I t ΤΑ is externally electrically matched with the second electrode 塾 8422 of the first electrode pad 9412 =1 = 8 ”, and the second semiconductor is audible to the semiconductor. The unit 8U is configured to be located at the second electrode pad 8422; the first electrode 841 is connected to the second electrode 842 by the connecting portion 843, and the bobconductor is early when the current is injected. =2 The second electrode pad 9422 of the 7L piece 90 can also be matched with the first electrode pad 8412 of the Twilight Leikai Du 8Λ. At this time, the first electrode is padded with the first semiconductor of the unit 811. Above the 121, the second electrode 842 on the semi-conductor on which the first electrode pad is located is connected by the first electrode 841 of the connection portion (4) , when current is injected. The semiconductor unit 811 where the first electrode pad 8412 is located is combined, and the current of the first electrode pad 9422 does not flow through the semiconductor single region 122, but directly through the connection portion J = the conductor single Si 7 is not 2 The semi-semiconductor layer, the active layer, and the material of the second semiconductor layer where the second electrode 塾9422 is located 2012 201233

The material comprises one or more elements selected from the group consisting of 〇a, Ab, In, As, P, N, and S1, such as GaN, AlGaN, InGaN,

AlGalnN, GaP, GaAs, GaAsP, GaNAs, or Si; the material of the substrate comprises sapphire, GaAs, GaP, SiC, ZnO, GaN, AIN, Cu, or Si. The examples of the invention are intended to be illustrative only and not to limit the scope of the invention. Any changes or modifications of the present invention to those skilled in the art will be made without departing from the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a top view of a photovoltaic element according to an embodiment of the present invention; FIG. 2 is a cross-sectional view of a photovoltaic element shown in FIG. 1; FIG. 3 is a photoelectric diagram shown in FIG. Figure 3 is a perspective view of the photoelectric element shown in Fig. 1; Fig. 5 is a top view of the photovoltaic element according to an embodiment of the present invention; 6 is a photovoltaic element 3d shown in Fig. 5. Fig. 7 is an equivalent circuit diagram of a photovoltaic element shown in Fig. 5; Fig. 8 is a top view of a photovoltaic element according to an embodiment of the present invention; and Fig. 9 is a perspective view of a photovoltaic element 3d shown in Fig. 8. Fig. 1 is a diagram showing the equivalent circuit diagram of the photovoltaic element shown in Fig. 8; Fig. 13 is a perspective view of the photovoltaic element shown in Fig. 11 of Fig. 11 in accordance with an embodiment of the present invention; The equivalent circuit diagram of the photovoltaic element shown in the figure π; =.14 is a 3D perspective view of the photovoltaic element shown in Fig. 14 of the photoelectric element shown in the first embodiment of the present invention; The equivalent circuit diagram of the photovoltaic element shown in Fig. 14; Fig. 17 is a photoelectric diagram according to an embodiment of the present invention. Figure 2003533 Figure 18 is a 3D perspective view of the photovoltaic element shown in Figure 17; Figure 19 is an equivalent circuit diagram of the photovoltaic element shown in Figure 17; Figure 20 is a photovoltaic element according to an embodiment of the present invention Fig. 21 is a perspective view of a photovoltaic element shown in Fig. 20; Fig. 22 is an equivalent circuit diagram of a photovoltaic element shown in Fig. 20; Fig. 23 is a photoelectric element according to an embodiment of the present invention. Fig. 24 is a perspective view of a photovoltaic element shown in Fig. 23; Fig. 25 is a top view of a photovoltaic element according to an embodiment of the present invention. [Description of main component symbols] 10, 20, 30, 40, 50 , 60, 70, 80, 90 photoelectric elements; 11, 21, 31, 41, 51, 61, 71, 81 substrates; 141, 24, 341, 441, 541, 64, 74, 841 first electrodes; 142, 242 , 342, 442, 542, 642, 742, 842 second electrode; 143, 243, 343443, 543, 643, 743, 843 connection portion; 121 first semiconductor layer; 123 second semiconductor layer; 122 active region; Slot; 111, 311 dividing track; 1411, 2411, 3411, 4411, 541 b 6411, 74n, 8411 first extension Department; 1421, 2421, 342, 442, 542, 642, 7421, 8421 second extension; 1412, 2412, 3412, 4412, 5412, 6412, 7412, 8412, 9412 first electrode pad; 1422, 2422, 3422 4422, 5422, 6422, 7422, 8422, 9422 second electrode pads; 105, 106, 107, 108, 109, 205, 206, 207, 208, 209, 305, 306, 307, 308, 309 '405 '406, 407 '505, 506, 507, 605, 606, 607, 705, 706, 707, 801, 802, 803, 804, 805, 806, 807 rows; 15: 1, 152, 153, 154, 155, 161, 162 163, 164, 165, 171, 172, 173, 21 201203533 174 194 263 353 373 393 462 475 572 671 811 191 255 275 295 364 384 454 472 562 662 769 872 semiconductor unit; 1411a, 2411a first curve extension ; 1421a, 2421a second curve extension; 1421b, 2421b, 3411b, 4411a linear extension; 1411c, 1421c, 2411c, 3411c, 4411c second-order extension; 3411a curve extension. 181 195, 264, 284, 354, 374, 394, 463, 551, 573, 672, 812, 182 251, 271, 291, 355, 375, 395, 464, 552, 574, 751, 871, • 183 252 , 272, 292, 361, 381, 451, 465, 553, 651, 752, .184 253, 273, 293 ' 362, 382, 452 ' 466, 554 ' 652, 761, 185 254 274 294 363 383 453 471 561 661 762 192 261 281 351 371 391 455 473 563 663 771 193, 262, 282, 352, 372 '392, 461 &gt; 474, 571, 664, 772,

twenty two

Claims (1)

201203533 VII. Patent application scope: 1. A photovoltaic element comprising a substrate; μ complex (4) units electrically connected to each other and located on the substrate, wherein each of the semiconductor units comprises a first half, - second a semiconductor layer and an active region interposed therebetween; a plurality of complex peaks of the individual single dipole and a plurality of first, respectively (10) conductor units, - second semiconductor unit semiconductor single 7C, the first At least one of the electrodes is disposed on the second semiconductor layer of the semiconductor unit, and the second semiconductor layer electrode and the second electrode of the second conductor unit comprise a first extension portion and a second portion Located on the third semiconductor unit without the electrode pads. 1. The photoelectric element of the second aspect of the patent application, the shape of the semiconductor unit of the bean, and the semiconductor unit of the same type. ♦ The first one is ^^. The photovoltaic element of the first item, wherein each of the first three first extending portions and the second electrodes respectively comprise a second extending portion. The photo-electric component of claim 1, wherein at least one of the first extension and the second extension comprises a linear extension and/or a second-order extension. 7. The photovoltaic element of claim 1, wherein the first extensions each comprise a first curved extension, and the second extensions each comprise a second curved extension; the first curved extension The portion and the second curved extension are not parallel to either side of the semiconductor units. 8. The photovoltaic device of claim 7, wherein the _th electrode and/or the second electrode further comprise a straight line extension. The photovoltaic element of claim 1, wherein the first conductor is located on the outermost periphery of the substrate; and the second semiconductor is located on the outermost periphery of the substrate. Body - ^ The photoelectric component of claim 9 of the patent scope, The first electrode further includes an extension portion, and/or the second semiconductor unit further includes a - (four) portion that is in difficult contact with the second portion. - The photovoltaic element of claim 9 wherein the first conductor is located at one of the substrates first gamma Τ ^ the first body unit is located at a second corner of the substrate; the second W | 2. Patent scope! The portion is formed in the semiconductor units, and further includes an electrical connection by the connecting portion. /, 5 hai some semiconductor single day 24 201203533 13. As claimed in claim 1, the first part of the third semiconductor unit extends from the first side of the third semiconductor unit to a second side of the phase g And the second extension extends from the second side of the third guide 7C toward the first side, and the first portion is between the second extensions. <Extension. P-position 1 V: The photovoltaic element of claim 2, wherein the semiconductors 7L include a fourth, fifth, sixth, and seventh semiconductor germanium, and the fourth and fifth semiconductor unit configurations The first sixteenth and the second conductor unit are disposed in the second row and adjacent to the first body sheet on the sixth semiconductor unit: the extension portion 'the first extension portion from the fourth half The second extension extends from the first side of the 哕m-, 軎Α ', and the first side of the T-side of the four-half guide, wherein the second side (two) six; the conductor unit - six semi-conducting - the first side extension Where the sixth semiconductor single Si edge is close to the second side of the substrate, the first side of the conductor 7L is closest to the first side of the substrate. The light-emitting element of item 14 is the fourth electrode layout and the fifth semiconductor derivative: a single L electrode layout 该 the same on the sixth semiconductor unit. The electrode arrangement of the second layer of the conductor is the same as that of the second row of the second row, and / or the number of the semiconductor units in the first row is different from the number of the semiconductor units in the second row. / = The photoelectric element of claim 2, wherein the semiconductor units in the row are serially connected to a first side by a first connecting portion, and the semiconductors in the second row are borrowed By the seventh-second direction, wherein the first-direction and the second-side light-emitting element, as in the first aspect of the patent application, further comprises a layer of 5 layers formed between the substrate and the semiconductor layer units . 20. For example, in the photovoltaic element of claim i, the 1 J pole = the second semiconductor and/or the first "dipole + the conductor comprises an insulating layer. 2 electric 1 pole t please patent range 1 The photovoltaic element, wherein the area of the first electrode pad is greater than the area of the second semiconductor unit by 5 phases 26