KR20170035357A - An optoelectronic device - Google Patents

Abstract

The present invention relates to a photoelectric device, comprising: a substrate; A plurality of semiconductor units electrically connected to each other and located on a substrate, each semiconductor unit including a first semiconductor layer, a second semiconductor layer, and an active region therebetween; A plurality of first electrodes located on the first semiconductor layer, respectively; A connection part formed on the plurality of semiconductor layer units and electrically connecting the semiconductor layer units in series; And a plurality of second electrodes disposed on the second semiconductor layer, wherein at least one of the plurality of first electrodes includes a first elongating portion, at least one of the plurality of second electrodes 2 stretching portion.

Description

AN OPTOELECTRONIC DEVICE

The present invention relates to a light emitting device arrangement.

Light emitting diodes in solid state lighting devices have low power consumption, low calorific value, long operating life, and low impact resistance and volume. And has excellent photoelectric properties such as high speed of reaction and emission of color light with a stable wavelength, it has already been widely used in directives of home appliances, measuring instruments and photoelectric products. Due to the development of photoelectric technology, solid state lighting devices are expected to lead the mainstream of lighting applications in the near future because they emphasize luminous efficiency, service life and brightness.

Currently, LEDs are used in the form of arrayed light emitting devices, which are widely applied to high drive voltages and can reduce the volume and weight of LEDs. LED makers meet the customer's demand for LED with high driving voltage by changing the electrode distribution for the array type light emitting device and lower the cost and further increase the production efficiency.

The present invention contemplates a photoelectric device, the photoelectric device comprising: a substrate; A plurality of semiconductor units electrically connected to each other and located on the substrate, each semiconductor unit including a first semiconductor layer, a second semiconductor layer, and an active region interposed therebetween; A plurality of first electrodes each located on a first semiconductor layer; A connection unit formed on the plurality of semiconductor units and electrically connecting the plurality of semiconductor units electrically in series; And a plurality of second electrodes respectively positioned on the second semiconductor layer, wherein one first electrode includes a first extending portion and one second electrode includes a second extending portion.

The present invention contemplates a photoelectric device, the photoelectric device comprising: a substrate; A plurality of semiconductor units electrically connected to each other and located on the substrate, each semiconductor unit including a first semiconductor layer, a second semiconductor layer, and an active region interposed therebetween; A plurality of first electrodes each located on the first semiconductor layer; And a connection unit formed on the plurality of semiconductor units and electrically connecting the plurality of semiconductor units electrically in series; And a plurality of second electrodes respectively positioned on the second semiconductor layer, wherein one first electrode includes a first extending portion, one second electrode includes a second extending portion, and the plurality The driving voltages of the semiconductor units are substantially the same.

The present invention contemplates a photoelectric device, the photoelectric device comprising: a substrate; A plurality of semiconductor units electrically connected to each other and located on the substrate, each semiconductor unit including a first semiconductor layer, a second semiconductor layer, and an active region interposed therebetween; A plurality of first electrodes each located on the first semiconductor layer; And a plurality of second electrodes respectively located on the second semiconductor layer, wherein the plurality of semiconductor units include a first semiconductor unit, a second semiconductor unit and a third semiconductor unit, and at least one of the first electrodes One of which includes a first electrode pad located on a first semiconductor unit at the outermost portion of the substrate and at least one of the second electrodes includes a second electrode located on a second semiconductor unit at the outermost portion of the substrate, The first electrode and the second electrode include a first elongating portion and a second elongating portion positioned on a third semiconductor unit where no electrode pad is provided.

The invention contemplates a photoelectric device, the photoelectric device comprising: a substrate; A plurality of semiconductor units electrically connected to each other and located on a substrate and each including a first semiconductor layer, a second semiconductor layer, and an active region interposed therebetween; And a plurality of first electrodes and a plurality of second electrodes respectively disposed on the plurality of semiconductor units, wherein each of the semiconductor units includes a first semiconductor unit, a second semiconductor unit, and a third semiconductor unit, Wherein at least one of the first electrodes comprises a first electrode pad located on a second semiconductor layer of the first semiconductor unit and at least one of the second electrodes comprises a second electrode located on a second semiconductor layer of the second semiconductor unit, The first electrode and the second electrode including a first elongating portion and a second elongating portion positioned on a third semiconductor unit on which no electrode pad is provided.

According to the present invention, the electrode distribution is different for the array type light emitting device, thereby satisfying the customer's demand for the LED having the high driving voltage, lowering the cost and increasing the production efficiency.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a top view of a photoelectric device according to an embodiment of the present invention.
2 is a cross-sectional view of the photoelectric device shown in Fig.
3 is a 3D perspective view of the optoelectronic device shown in Fig.
4 is an equivalent circuit diagram of the photoelectric element shown in Fig.
5 is a top view of a photoelectric device shown in accordance with an embodiment of the present invention.
6 is a 3D perspective view of the optoelectronic device shown in Fig.
7 is an equivalent circuit diagram of the photoelectric element shown in Fig.
8 is a top view of a photoelectric device shown in accordance with an embodiment of the present invention.
9 is a 3D perspective view of the optoelectronic device shown in Fig.
10 is an equivalent circuit diagram of the photoelectric element shown in Fig.
11 is a top view of a photoelectric device shown in accordance with an embodiment of the present invention.
12 is a 3D perspective view of the optoelectronic device shown in Fig.
13 is an equivalent circuit diagram of the photoelectric element shown in Fig.
14 is a plan view of a photoelectric device according to an embodiment of the present invention.
15 is a 3D perspective view of the optoelectronic device shown in Fig.
16 is an equivalent circuit diagram of the photoelectric element shown in Fig.
17 is a plan view of a photoelectric device according to an embodiment of the present invention.
18 is a 3D perspective view of the optoelectronic device shown in Fig.
19 is an equivalent circuit diagram of the photoelectric element shown in Fig.
20 is a plan view of a photoelectric device according to an embodiment of the present invention.
21 is a 3D perspective view of the optoelectronic device shown in Fig.
22 is an equivalent circuit diagram of the photoelectric element shown in Fig.
23 is a plan view of a photoelectric device according to an embodiment of the present invention.
24 is a 3D perspective view of the optoelectronic device shown in Fig.
25 is a top view of a photoelectric device shown in accordance with an embodiment of the present invention.

1 shows a top view of an optoelectronic device 10 according to an embodiment of the present invention. The photoelectric element 10 is a light emitting diode (LED), a laser diode (LD), or a solar battery, and includes a plurality of semiconductor units formed on a substrate 11, a first electrode 141 formed on the semiconductor units, A second electrode 142, and a connection portion 143. In this embodiment, the photoelectric element 10 is a light emitting diode. 2 is a cross-sectional view of the electrooptic device 10 taken along the line A-A 'in FIG. Each semiconductor unit includes a first semiconductor layer 121, a second semiconductor layer 123, and an active region 122 between the first and second semiconductor layers. The constituent material of the first semiconductor layer 121 is a III-V semiconductor material doped with a p-type or n-type impurity, and the constituent material of the second semiconductor layer 123 is a III-V And the electrical characteristics of the first semiconductor layer 121 and the second semiconductor layer 123 are different from each other. The structure of the active region 122 is a single heterostructure (SH), a double heterostructure (DH), or a multi-quantum well (MQW). The groove 170 is formed in the semiconductor unit by etching the semiconductor unit, and exposes a part of the first semiconductor layer 121. A plurality of divided channels 111 are formed between the semiconductor units to expose a part of the substrate 11. A plurality of first electrodes 141 and a plurality of second electrodes 142 are formed on the photoelectric element 10. The first electrode 141 is located on the exposed first semiconductor layer 121, (142) is formed on the second semiconductor layer (123). The first electrode 141 includes a first extending portion 1411 and the second electrode 142 includes a second extending portion 1421. In addition, the first electrode 141 on one of the plurality of semiconductor units includes the first electrode pad 1412, the second electrode 142 on the other semiconductor unit includes the second electrode pad 1422, .

-1), n=(

), 또는 n=(

+1)에 따라 설계하되, 그 중, n은 반도체 유닛의 수량을 대표하며, V는 광전소자의 구동전압을 대표하며, V_f는 반도체 유닛의 구동전압을 대표한다. 본 실시예에서 광전소자(10)의 크기는 85×85mil²이며, 그 구동전압은 72V이다. 각 반도체 유닛의 구동전압은 실질적으로 3V이나, 반도체 유닛의 구동전압은 제작공정의 제어 및 에폭시층의 품질로 인하여 변화가 발생할 수 있다. 일반적으로 광전소자의 전기적 효율 면에서, 반도체 유닛의 구동전압은 낮을수록 좋다. 각 반도체 유닛의 면적은 대체로 서로 동일하다. 상기의 공식에 따라 광전소자(10)는 24개의 반도체 유닛을 포함하고, 각각 행(105, 106, 107, 108 및 109)에 배치되어 있다. 제1행(105)은 5개의 반도체 유닛(152, 152, 153, 154 및 155)을 포함하며, 이들 반도체 유닛은 제1 방향으로 직렬 연결된다. 제2행(106)은 5개의 반도체 유닛(161, 162, 163, 164 및 165)을 포함하며 이들 반도체 유닛은 제2 방향으로 직렬 연결된다. 제3행(107)은 4개의 반도체 유닛(171, 172, 173 및 174)을 포함하며, 이들 반도체 유닛은 제1 방향으로 직렬 연결된다. 제4행(108)은 5개의 반도체 유닛(181, 182, 183, 184 및 185)을 포함하고, 이들 반도체 유닛은 제2 방향으로 직렬 연결된다. 제5행(109)은 5개의 반도체 유닛(191, 192, 193, 194 및 195)을 포함하고, 이들 반도체 유닛은 제1 방향으로 직렬 연결된다. 제1 방향 및 제2 방향은 서로 반대되며, 서로 다른 행에 서로 다른 수량의 반도체 유닛을 포함하는 구성은 배치상 더욱 쉽게 고객의 요구를 만족시킬 수 있다. The distribution of semiconductor units and electrodes must also be specially designed to meet the customer's demand for specific areas, currents and drive voltages of optoelectronic devices. The quantity of semiconductor units is in principle n = (

-1), n = (

), Or n = (

But it designed according to +1), of which, n, and is representative of the quantity of the semiconductor unit, and V is representative of the drive voltage of the photoelectric element, V _f represents the driving voltage of the semiconductor unit. The size of the photoelectric element 10 in this embodiment is 85 × 85mil ^2, the drive voltage is 72V. The driving voltage of each semiconductor unit is substantially 3 V, but the driving voltage of the semiconductor unit may change due to the control of the manufacturing process and the quality of the epoxy layer. Generally, in terms of the electrical efficiency of the photoelectric element, the lower the drive voltage of the semiconductor unit, the better. The area of each semiconductor unit is generally the same. In accordance with the above formula, the optoelectronic device 10 comprises 24 semiconductor units and is arranged in rows 105, 106, 107, 108 and 109, respectively. The first row 105 includes five semiconductor units 152, 152, 153, 154 and 155, which are connected in series in a first direction. The second row 106 includes five semiconductor units 161, 162, 163, 164 and 165, and these semiconductor units are connected in series in the second direction. The third row 107 includes four semiconductor units 171, 172, 173 and 174, which are connected in series in the first direction. The fourth row 108 includes five semiconductor units 181, 182, 183, 184 and 185, and these semiconductor units are connected in series in the second direction. The fifth row 109 includes five semiconductor units 191, 192, 193, 194 and 195, and these semiconductor units are connected in series in the first direction. The arrangement in which the first direction and the second direction are opposite to each other and the different rows include different numbers of semiconductor units can more easily satisfy the customer's needs in the layout.

 In the third row 107, the outer shape of the semiconductor unit is rectangular and is different from the shape of the semiconductor unit in the other rows. With this design, electrode distribution can be made easier. 1 and 3, except for the semiconductor units 151, 155, 191, and 195 in the corner regions of the substrate 11 in the first row 105 and the fifth row 109, The electrode distributions are similar to each other. Except for the semiconductor units 161, 165, 181, and 185 near the edge of the substrate 11, the other electrode distributions located on the semiconductor unit are the same in the second row 106 and the fourth row 108 Do. When the electrode distribution of the semiconductor unit in the third row 107 is compared with the semiconductor unit in the other row, the difference is relatively large. If the electrode distribution on the semiconductor units 172 and 173 is the same, And is not the same as the semiconductor units 171 and 174.

The first stretching section 1411 includes a first curved stretching section 1411a. The second extending portion 1421 includes the second curved extending portion 1421a and the second extending portion 1421 of the semiconductor unit on the rows 105, 106, 108, and 109 includes the straight extending portion 1421b . The first curved stretching portion 1411a and / or the second curved stretching portion 1421a are not parallel to either side of the semiconductor unit. The first extending portion on the semiconductor unit in the first row 105, the third row 107 and the fifth row 109 is located in the groove 170 and extends from the first side of the semiconductor unit toward the second side of the other side And the second extending portion 1421 is stretched from the second side of the semiconductor unit toward the first side. The first extending portion 1411 on the semiconductor unit of the second row 106 and the fourth row 108 is extended from the second side of the semiconductor unit toward the first side, And the second side is extended from the first side to the second side. The first extending portion 1411 is provided in the semiconductor unit groove 170 and is electrically connected to the first semiconductor layer 121. The second extending portion 1421 is disposed close to the edge of the semiconductor unit, Lt; / RTI > The quantity of the elongated portion is adjusted according to the area of the semiconductor unit, and the larger the area of the semiconductor unit, the more elongated portions are required. The stretching section also forms a two-stage stretching section 1421c stretched from the first stretching section 1411a and the second stretching section 1411c and / or the second stretching section 1421a to increase current dispersion .

The first electrode pad 1412 and the second electrode pad 1422 are respectively located on the semiconductor units 155 and 191 facing each other at the corners of the substrate 11 and the first electrode pad 1412 is connected to the semiconductor unit And the second electrode pad 1422 is in contact with the second extending portion 1421 on the semiconductor unit 191. The second extending portion 1421 on the semiconductor unit 191 is in contact with the first extending portion 1411 on the semiconductor unit 191, The electrode pads are for wire bonding or flip chip type bonding. In order to reduce the difficulty of bonding, it is preferable that the electrode pads are respectively disposed on different semiconductor units on the outermost side of the substrate 11. [

In order to electrically connect the respective semiconductor units, a connecting portion 143 is formed between the respective semiconductor units, and for example, the connecting portion 143 is formed between the first extending portion 1411 on the first semiconductor unit and the second semiconductor And the second extending portion 1421 on the unit. In this embodiment, the connection portion 143 forms a series connection in the first direction between the first row 105, the third row 107 and the fifth row 109, and the second row 106 and the And forms a series connection in the direction opposite to the second direction between the four rows 108. [ The semiconductor units 151 and 161, 165 and 174, 171 and 181, 185 and 195 are connected in series between the respective rows by the connecting portion 143. There are two connection portions 143 between two semiconductor units of the first row 105, the second row 106, the fourth row 108 and the fifth row 109, and the third row 107, There are two connection portions 143 between two of the two semiconductor units. 4 is an equivalent circuit diagram of the optoelectronic device shown in Fig.

The transparent conductive layer may further include a transparent conductive layer between the second semiconductor layer 123 and the second electrode 142 of the photoelectric element 10. The material of the transparent conductive layer may be a metal oxide such as ITO tin oxide (CTO), antimony tin oxide, indium zinc oxide, zinc oxide aluminum or zinc oxide tin. In addition, when the metal layer has a thickness capable of transmitting light, it may be used as a transparent conductive layer.

A bonding layer may be further included between the substrate 11 and the first semiconductor layer 121, and the bonding layer bonds the semiconductor unit to the substrate 11. The bonding layer is an insulating transparent bonding layer or a conductive transparent bonding layer. If it is an insulating transparent bonding layer, the material may be polyimide, benzocyclobutene (BCB), or polyfluorocyclobutane (PFCB). If it is a conductive bonding layer, the material may be a metal oxide or a metal, and the metal oxide material may be indium-tin-oxide (ITO), tin oxide cadmium (CTO), antimony tin oxide, zinc oxide, zinc oxide, Includes annotations. The metallic material includes nickel, gold, titanium, chromium, aluminum or platinum. A split channel 111 is formed between each semiconductor unit and exposes a portion of the substrate 11 and / or the insulating transparent bonding layer. When the bonding layer is the conductive bonding layer, the divided channels 111 penetrate the conductive bonding layer and expose the substrate 11 to electrically isolate the semiconductor units. At this time, the substrate 11 is aluminum nitride, sapphire, or glass.

5 shows a top view of an optoelectronic device 20 according to a second embodiment of the present invention. 5 and 6, the photoelectric device 20 includes a plurality of semiconductor units formed on a substrate 21, which are separated through a plurality of division channels 211, and the first electrodes 241, the second electrode 242, and the connection portion 243 are formed on the semiconductor unit. The structure of the semiconductor unit is the same as that of the photoelectric element 10 and includes a first semiconductor layer 121, a second semiconductor layer 123, and an active region therebetween. A plurality of divided channels 211 are formed between the semiconductor units. A plurality of first electrodes 241 and second electrodes 242 are provided on the photoelectric element 20 and the first electrode 241 is formed on the exposed first semiconductor layer 121, The electrode 241 is formed on the exposed second semiconductor layer 123. The first electrode 241 includes a first extending portion 2411 and the second electrode 242 includes a second extending portion 2421. In addition, the first electrode 241 on one of the plurality of semiconductor units includes the first electrode pad 2412, and the second electrode 242 on the other semiconductor unit includes the second electrode pad 2422 ).

-1)에 따라, 광전소자(20)는 23개의 반도체 유닛을 포함하고, 이들 반도체 유닛은 복수 개의 행(205, 206, 207, 208 및 209)에 각각 배치된다. 제1행(205)은 5개의 반도체 유닛(251, 252, 253, 254 및 255)을 포함하고 이들 반도체 유닛은 제1 방향으로 직렬 연결되고, 그 위의 전극 분포는 광전소자(10)의 제1행(105) 중의 반도체 유닛 상의 전극 분포와 서로 동일하다. 제2행(26)은 4개의 반도체 유닛(261, 262, 263 및 264)을 포함하고 이들 반도체 유닛은 제2 방향으로 직렬 연결되고, 그 위의 전극 분포는 광전소자(10)의 제3행(107) 중의 반도체 유닛 상의 전극 분포와 서로 동일하다. 제3행(207)은 5개의 반도체 유닛(271, 272, 273, 274 및 275)을 포함하고 이들 반도체 유닛은 제1 방향으로 직렬 연결되고, 그 위의 전극 분포는 광전소자(10)의 제1행(105) 중의 반도체 유닛 상의 전극 분포와 서로 동일하다. 제4행(208)은 4개의 반도체 유닛(281, 282, 283 및 284)을 포함하고 이들 반도체 유닛은 제2 방향으로 직렬 연결되고, 그 위의 전극 분포는 광전소자(10)의 제3행(107) 중의 반도체 유닛 상의 전극 분포와 서로 동일하다. 제5행(209)은 5개의 반도체 유닛(291, 293, 293, 294 및 295)을 포함하고 이들 반도체 유닛은 제1 방향으로 직렬 연결되고, 그 위의 전극의 분포는 광전소자(10)의 제1행(105) 중의 반도체 유닛 상의 전극 분포와 서로 동일하다. In this embodiment, the size of the opto-electronic device 20 is 85 x 85 mil ² , the driving voltage is 72 V, the area of each semiconductor unit is substantially equal to each other, and the formula n =

-1), the opto-electronic device 20 includes 23 semiconductor units, which are arranged in a plurality of rows 205, 206, 207, 208 and 209, respectively. The first row 205 includes five semiconductor units 251, 252, 253, 254 and 255 and these semiconductor units are connected in series in a first direction, Are the same as the electrode distribution on the semiconductor unit in the first row (105). The second row 26 includes four semiconductor units 261, 262, 263 and 264, which are connected in series in a second direction and the electrode distribution thereon is connected to the third row of photoelectric elements 10 Are the same as the electrode distribution on the semiconductor unit in the semiconductor substrate 107. The third row 207 includes five semiconductor units 271, 272, 273, 274 and 275 and these semiconductor units are connected in series in the first direction, Are the same as the electrode distribution on the semiconductor unit in the first row (105). The fourth row 208 includes four semiconductor units 281, 282, 283 and 284 which are connected in series in a second direction and the electrode distribution thereon is connected to the third row of photoelectric elements 10 Are the same as the electrode distribution on the semiconductor unit in the semiconductor substrate 107. The fifth row 209 includes five semiconductor units 291, 293, 293, 294 and 295 and these semiconductor units are connected in series in the first direction and the distribution of the electrodes thereon is the same as that of the photoelectric elements 10 Are the same as the electrode distribution on the semiconductor unit in the first row (105).

In the second row 206 and the fourth row 208, the external shape of the semiconductor unit is rectangular and is different from the shape of the semiconductor unit in the other rows. 5 and 6, the electrode distribution on the semiconductor units of the first row 205, the third row 207 and the fifth row 209 is the same as that of the semiconductor units 251, 255, 271, 275, 291 and 295 The electrode distribution on other semiconductor units is substantially similar between them. The electrode distribution on the semiconductor units in the second row 206 and the fourth row 208 is such that the electrode distribution on the other semiconductor units except for the electrodes on the semiconductor units 261, 264, 281 and 284 are substantially identical among them . The first stretching portion 2411 includes a first curved stretching portion 2411a and the second stretching portion 2421 includes a second curved stretching portion 2421a. The second extending portion 2421 in the semiconductor unit of rows 205, 207, and 209 further includes a straight extending portion 2421b. The first curved stretching portion 2411a and the second curved stretching portion 2421a are not parallel to either side of the semiconductor unit. The first extending portion 2411 on the first row 205, the third row 207 and the fifth row 209 semiconductor unit is provided on the first semiconductor layer 121 and extends from the first side of the semiconductor unit The second stretching portion 2421 is stretched from the second side toward the first side. In this embodiment, the second extending portion 2421 is generally provided at the edge near the semiconductor unit, the first extending portion 2411 is provided in the semiconductor unit, and is electrically connected to the first semiconductor layer. The stretching section may increase the current dispersion by forming a stretched two-step stretching section 2411c from the first curved stretching section 2411a.

The first electrode pad 2412 and the second electrode pad 2422 are respectively formed on the semiconductor units 255 and 291 and are electrically connected to the first electrode pad 2412 and the first extending portion 2411 And the second electrode pad 2422 and the second extending portion 2421 on the semiconductor unit 291 are in contact with each other. The electrode pads are for bonding and are mounted on different semiconductor units on the corner regions of the substrate 21, respectively.

In this embodiment, the connection 243 forms a series connection in a first direction between the first row 205, the second row 207 and the fifth row 209, and the second row 206 and fourth And forms a series connection in the opposite direction of the second direction between the rows 208. [ The semiconductor units 251 and 261, 264 and 275, 271 and 281 and 284 and 295 are connected in series between the connection portions 243 between the respective rows. There are two connection portions 243 between every two semiconductor units in the first row 205, the third row 207 and the fifth row 209 and the second row 206 and the fourth row 208, There is one connection portion 243 between every two semiconductor units. 7 is an equivalent circuit diagram of the photoelectric element shown in Fig.

Fig. 8 shows a top view of the photoelectric element 30 in accordance with the third embodiment of the present invention. 8 and 9, the photoelectric element 30 includes a plurality of semiconductor units formed on a substrate 31, a first electrode 341, a second electrode 342, and a connection portion 343 formed on the semiconductor unit, . The structure of the semiconductor unit includes a first semiconductor layer 121, a second semiconductor layer 123, and an active region 122 therebetween. A plurality of divided channels 311 are formed between the respective semiconductor units. A plurality of first electrodes 341 and a plurality of second electrodes 342 are formed in the photoelectric element 30. The first electrodes 341 in other semiconductor units except for the semiconductor unit 355 are electrically connected to the first elongate portion 341, (3411), and the second electrode (342) includes a second extending portion (3421). The first electrode 341 on the semiconductor unit 355 includes a first electrode pad 3412 and the second electrode 342 on the semiconductor unit 391 includes a second electrode pad 3422.

In this embodiment, the size of the opto-electronic device 30 is 50 x 50 mils ² , the driving voltage is 72 V, the driving voltage of the semiconductor unit is approximately 3 V, and the area of each semiconductor unit is substantially equal to each other. The opto-electronic device 30 comprises 23 semiconductor units, which are arranged in rows 305, 306, 307, 308 and 309, respectively. The first row 305 includes five semiconductor units 351, 352, 353, 354 and 355, which are connected in series in the first direction. The second row 306 includes four semiconductor units 361, 362, 363, and 364, which are serially connected in a second direction. The third row 307 includes five semiconductor units 371, 372, 373, 374 and 375, which are connected in series in the first direction. The fourth row 308 includes four semiconductor units 381, 382, 383, and 384, which are serially connected in the second direction. The fifth row 309 includes five semiconductor units 391, 392, 393, 394 and 395, which are connected in series in a first direction.

The contour of the semiconductor unit in the second row 306 and the fourth row 308 is different from the contour of the semiconductor unit in the other row. 8 and 9, the electrode distribution on the semiconductor units in the first row 305, the third row 307 and the fifth row 309 is the same as that of the semiconductor units 351, 355, 371, 375, 391, and 395 The electrode distribution on the other semiconductor unit is substantially similar to each other. The electrode distributions on the semiconductor units of the second row 306 and the fourth row 308 are substantially identical to each other on the other semiconductor units except the electrodes on the semiconductor units 361, 364, 381 and 384. The first extending portion 3411 may be provided on the semiconductor units 361, 375, 381, 391, and 394 near the outer side of the substrate 31 as a curved extending portion 3411a and may be formed as a straight extending portion 3411b Or may be provided on other semiconductor units. The second extending portion 3421 may be formed as a curved stretching portion.

Except for the semiconductor units 375 and 395 in the first row 305, the third row 307 and the fifth row 309, the first extending portion 3411 on the other semiconductor unit is provided with the first And the second extending portion 3421 is stretched from the second side toward the first side. The second extending portion 3421 is extended from the second side toward the second side opposite to the first side. The first extending portions 3411 on the semiconductor units 375 and 395 are extended from the third side of the semiconductor unit toward the second side. Except for the semiconductor units 361 and 381 in the second row 306 and the fourth row 308, the first extending portion 3411 on the other semiconductor unit is extended from the second side to the first side, The stretching portion 3421 is stretched from the first side toward the second side. The first extending portions 3411 on the semiconductor units 361 and 381 are extended from the third sides of the semiconductor units 361 and 381 toward the first side. The curved stretching portion and the second stretching portion 3421 of the first stretching portion 3411 are not parallel to either side of the semiconductor unit. In this embodiment, the second extending portion 3421 is generally provided close to the edge of the semiconductor unit, the first extending portion 3411 is located in the semiconductor unit, and is electrically connected to the first semiconductor layer. The stretching part may also form a two-step stretching part 3411c stretched from the curved stretching part 3411a and the straight stretching part 3411b to increase the current dispersion.

The first electrode pad 3412 and the second electrode pad 3422 are formed on the semiconductor units 355 and 391 respectively and the second electrode pad 3422 is formed on the second extending portion 3421 on the semiconductor unit 391. [ Respectively. The electrode pads are for wire bonding or flip chip type bonding and are provided on different semiconductor units on the corner area of the substrate 31, respectively.

In this embodiment, the connection portion 343 forms a series connection in the first direction between the first row 305, the third row 307 and the fifth row 309, and the second row 306 and the Fourth row 308 in a direction opposite to the second direction. Each of these events serially connects the semiconductor units 351 and 361, 364 and 375, 371 and 381 and 384 and 395 via a connection 343. Between each two semiconductor units, there is one connection portion 343 therebetween. 10 is an equivalent circuit diagram of the photoelectric element 30 shown in Fig.

11 shows a top view of an optoelectronic device 40 in accordance with a fourth embodiment of the present invention. 11 and 12, the photoelectric element 40 includes a plurality of semiconductor units formed on a substrate 41, a first electrode 441, a second electrode 442, and a connection portion 443 ). The structure of the semiconductor unit includes a first semiconductor layer 121, a second semiconductor layer 123, and an active region 122 therebetween. A plurality of divided channels 411 are formed between the respective semiconductor units. The first electrodes 441 and the second electrodes 442 are formed on the photoelectric elements 40. The first electrodes 441 formed on the semiconductor units other than the semiconductor units 455 are electrically connected to the first elongation units 441, And the second electrode 442 formed on the remaining semiconductor units except for the semiconductor unit 471 includes the second extending portion 4421. [ The first electrode 441 formed on the semiconductor unit 455 includes the first electrode pad 4412 and the second electrode 442 on the semiconductor unit 471 includes the second electrode pad 4422 .

In this embodiment, the size of the photoelectric element 40 is 45 x 45 mils ² , the driving voltage thereof is 48 V, and the driving voltage of the semiconductor unit is approximately 3 V. According to the above formula, the optoelectronic device 40 includes 16 semiconductor elements and is installed in rows 405, 406, and 407. The first row 405 includes five semiconductor units 451, 452, 453, 454, and 455, which are serially connected in a first direction. The second row 406 includes six semiconductor units 461, 462, 463, 464, 465 and 466 and these semiconductor units are connected in series in the second direction. The third row 407 includes five semiconductor units 471, 472, 473, 474 and 475, which are serially connected in a first direction.

The external shape of the semiconductor unit in the second row 402 is different from the shape of the semiconductor unit in the other rows. 11 and 12, the electrode distribution on the semiconductor units of the first row 405 and the third row 407 is different from the distribution of the electrodes on the semiconductor units 451, 455, 471, and 475, Are similar to each other in general. The first extending portion 4411 includes a linear extending portion 4411a and a second extending portion 4411c, and the second extending portion 4421 is a curved extending portion. The first extending portions 4411 on the semiconductor units of the first row 405 and the second row 407 are extended from the first side of the semiconductor unit toward the third side and the fourth side close to the first side, The second stretching portion 4421 is stretched from the second side toward the third side and the fourth side. The first extending portion 4411 on the semiconductor unit of the second row 406 is extended from the second side of the semiconductor unit toward the third side and the fourth side while the second extending portion 4421 is extended from the first side Three sides and the fourth side. Curved extension portions 4411 and 4421 are not parallel to any one side of the semiconductor unit.

The first electrode pad 4412 and the second electrode pad 4422 are respectively located on the semiconductor units 455 and 471 and the connection portion 443 forms a serial connection between the semiconductor units. 13 is an equivalent circuit diagram of the photoelectric element 40 shown in Fig.

-1)에 따라 본 실시예에서 광전소자(50)는 11개의 반도체 유닛을 포함하고, 이들 반도체 유닛은 각각 행(505, 506, 507)에 배치된다. 제1행(505)은 4개의 반도체 유닛(551, 552, 553, 554)을 포함하고 이들 반도체 유닛은 제1 방향으로 직렬 연결된다. 제2행(506)은 3개의 반도체 유닛(561, 562, 563)을 포함하고 이들 반도체 유닛은 제2 방향으로 직렬 연결된다. 제3행(507)은 4개의 반도체 유닛(571, 572, 573 및 574)을 포함하고 이들 반도체 유닛은 제1 방향으로 직렬 연결된다. 제1 연신부(5411)를 구비한 제1 전극(541)은 반도체 유닛(554)을 제외한 나머지 반도체 유닛 상에 형성되고, 제2 연신부(5421)를 구비한 제2 전극(542)은 전체 반도체 유닛 상에 설치된다. 반도체 유닛(554) 상의 제1 전극(541)은 제1 전극패드(5412)를 포함하고, 반도체 유닛(571) 상의 제2 전극(542)은 제2 전극패드(5422)를 포함한다. 연결부(543)는 반도체 유닛 사이에 직렬 연결을 형성한다. 도 16은 도 14에 나타낸 광전소자(50)의 등가 회로도이다.Fig. 14 shows a top view of a photoelectric element 50 according to a fifth embodiment of the present invention. 15 is a 3D perspective view of the photoelectric element 50. Fig. The size of the photoelectric element 50 is 40 x 40 mils ² , its driving voltage is 36 V, and the driving voltage of the semiconductor unit is approximately 3 V. Formula n = (

-1), the opto-electronic device 50 in this embodiment includes eleven semiconductor units, which are arranged in rows 505, 506 and 507, respectively. The first row 505 includes four semiconductor units 551, 552, 553, and 554, and these semiconductor units are connected in series in the first direction. The second row 506 includes three semiconductor units 561, 562, 563 and these semiconductor units are connected in series in the second direction. The third row 507 includes four semiconductor units 571, 572, 573, and 574, which are serially connected in a first direction. The first electrode 541 having the first extending portion 5411 is formed on the remaining semiconductor units except the semiconductor unit 554 and the second electrode 542 having the second extending portion 5421 is formed on the entire And is mounted on the semiconductor unit. The first electrode 541 on the semiconductor unit 554 includes a first electrode pad 5412 and the second electrode 542 on the semiconductor unit 571 includes a second electrode pad 5422. [ The connection portion 543 forms a serial connection between the semiconductor units. 16 is an equivalent circuit diagram of the photoelectric element 50 shown in Fig.

)에 따라 본 실시예에서 광전소자(60)는 8개의 반도체소자를 포함하고, 복수 개의 행(605, 606 607)에 각각 배치된다. 제1행(605)은 2개의 반도체 유닛(651, 652)을 포함하고 이들 반도체 유닛은 제1 방향으로 직렬 연결된다. 제2행(606)은 4개의 반도체 유닛(661, 662, 663, 664)을 포함하고 이들 반도체 유닛은 제2 방향으로 직렬 연결된다. 제3행(607)은 2개의 반도체 유닛(671, 672)을 포함하고 이들 반도체 유닛은 제1 방향으로 직렬 연결된다. 제1 전극(641)은 제1 연신부(6411)를 포함하고, 제2 전극(642)은 제2 연신부(6421)를 포함한다. 이밖에, 복수 개의 반도체 유닛 중 하나의 반도체 유닛 상의 제1 전극(641)은 2개의 제1 전극패드(6412)를 포함하고, 다른 하나의 반도체 유닛 상의 제2 전극(642)은 2개의 제2 전극패드(6422)를 포함한다. 연결부(643)는 반도체 유닛 사이에서 직렬 연결을 형성한다. 도 19는 도 17에 나타난 광전소자(60)의 등가 회로도이다.17 shows a plan view of the photoelectric element 60 in accordance with the sixth embodiment of the present invention. 18 is a 3D perspective view of the photoelectric element 60. Fig. The size of the opto-electronic device 60 is 120 x 120 mils ² , its driving voltage is 24 V, and the driving voltage of the semiconductor unit is approximately 3 V. Formula n = (

), The opto-electronic device 60 in this embodiment includes eight semiconductor elements and is disposed in a plurality of rows 605 and 606 607, respectively. The first row 605 includes two semiconductor units 651 and 652, which are connected in series in the first direction. The second row 606 includes four semiconductor units 661, 662, 663, 664 and these semiconductor units are connected in series in the second direction. The third row 607 includes two semiconductor units 671 and 672, which are connected in series in the first direction. The first electrode 641 includes a first extending portion 6411 and the second electrode 642 includes a second extending portion 6421. [ In addition, the first electrode 641 on one of the plurality of semiconductor units includes two first electrode pads 6412, and the second electrode 642 on the other semiconductor unit includes two second And an electrode pad 6422. The connection portion 643 forms a series connection between the semiconductor units. 19 is an equivalent circuit diagram of the opto-electronic device 60 shown in Fig.

-1)에 따라 본 실시예에서 광전소자(70)는 7개의 반도체 유닛을 포함하고, 복수 개의 행(705, 706, 707)에 각각 배치된다. 제1행(705)은 2개의 반도체 유닛(751, 752)을 포함하고 이들 반도체 유닛은 제1 방향으로 직렬 연결된다. 제2행(706)은 3개의 반도체 유닛(761, 762, 769)을 포함하고 이들 반도체 유닛은 제2 방향으로 직렬 연결된다. 제3행(707)은 2개의 반도체 유닛(771, 772)을 포함하고 이들 반도체 유닛은 제1 방향으로 직렬 연결된다. 제1 전극(741)은 제1 연신부(7411)를 포함하고, 제2 전극(742)은 제2 연신부(7421)를 포함한다. 이밖에, 복수 개의 반도체 유닛 중의 1개의 반도체 유닛 상의 제1 전극(741)은 2개의 제1 전극패드(7412)를 포함하고, 다른 하나의 반도체 유닛 상의 제2 전극(742)은 2개의 제2 전극패드(7422)를 포함한다. 연결부(743)는 반도체 유닛 사이에서 직렬 연결을 형성한다. 도 22는 도 20에 나타난 광전소자(70)의 등가 회로도이다.20 shows a top view of an optoelectronic device 70 in accordance with a seventh embodiment of the present invention. 21 is a 3D perspective view of the photoelectric element 70. Fig. The size of the photoelectric element 70 is 120 x 120 mils ² , the driving voltage thereof is 24V, and the driving voltage of the semiconductor unit is approximately 3V. Formula n = (

-1), the photoelectric element 70 in this embodiment includes seven semiconductor units and is disposed in each of the plurality of rows 705, 706, and 707, respectively. The first row 705 includes two semiconductor units 751 and 752, which are serially connected in the first direction. The second row 706 includes three semiconductor units 761, 762 and 769, which are serially connected in a second direction. The third row 707 includes two semiconductor units 771 and 772, which are connected in series in the first direction. The first electrode 741 includes a first extending portion 7411 and the second electrode 742 includes a second extending portion 7421. [ In addition, the first electrode 741 on one semiconductor unit of the plurality of semiconductor units includes two first electrode pads 7412, and the second electrode 742 on the other semiconductor unit includes two second And an electrode pad 7422. The connection portion 743 forms a serial connection between the semiconductor units. 22 is an equivalent circuit diagram of the photoelectric element 70 shown in Fig.

)에 따라 본 실시예에서 광전소자(80)는 48개의 반도체 유닛을 포함하고 이들 반도체 유닛은 복수 개의 행(801, 802, 803, 804, 805, 806 및 807)에 각각 배치된다. 행(801, 803, 805, 807)에는 각각 7개의 반도체 유닛이 포함되고 이들 반도체 유닛은 제1 방향으로 직렬 연결된다. 행(802, 806)에는 7개의 반도체 유닛이 포함되고 이들 반도체 유닛은 제2 방향으로 직렬 연결된다. 제4행(804)은 6개의 반도체 유닛을 포함하고 이들 반도체 유닛은 제1 방향으로 직렬 연결된다. 복수 개의 반도체 유닛 중의 하나의 반도체 유닛 상의 제1 전극(841)은 반도체 유닛(811)의 제1 반도체층(121) 상에 위치한 제1 전극패드(8412)를 포함하고, 반도체 유닛(871) 상의 제2 전극(842)은 제2 반도체층(123) 상에 있는 제2 전극패드(8422)를 포함한다. 이밖에 제1 연신부(8411)를 구비한 제1 전극(841)은 제1 전극패드(8412)가 설치된 반도체 유닛을 제외한 나머지 반도체 유닛 상에 형성되어 있고, 제2 연신부(8421)를 구비한 제2 전극(842)은 모든 반도체 유닛 상에 형성되어 있다. 연결부(843)는 반도체 유닛 사이에서 직렬 연결을 형성한다. 제1 전극패드(8412)가 위치하는 반도체 유닛(811) 상의 제2 전극(842)은 제2 반도체층(123) 상에 형성되고, 연결부(843)를 통해 반도체 유닛(812)의 제1 전극(841)과 연결된다. 제2 전극패드(8422)가 위치하는 반도체 유닛(871) 상의 제1 전극(841)은 제1 반도체층(121) 상에 있고, 연결부(843)를 통해 반도체 유닛(872)의 제2 전극(842)에 연결된다.23 shows a plan view of the photoelectric element 80 in accordance with the eighth embodiment of the present invention. 24 is a 3D perspective view of the photoelectric element 80. Fig. The size of the photoelectric element 80 is 85 x 85 mils ² , its driving voltage is 144 V, and the driving voltage of the semiconductor unit is approximately 3 V. [ Formula n = (

The photoelectric element 80 in this embodiment includes 48 semiconductor units and these semiconductor units are disposed in a plurality of rows 801, 802, 803, 804, 805, 806, and 807, respectively. In each of the rows 801, 803, 805, and 807, seven semiconductor units are included, and these semiconductor units are connected in series in the first direction. In rows 802 and 806, seven semiconductor units are included and these semiconductor units are connected in series in the second direction. The fourth row 804 includes six semiconductor units and these semiconductor units are connected in series in the first direction. The first electrode 841 on one semiconductor unit of the plurality of semiconductor units includes a first electrode pad 8412 located on the first semiconductor layer 121 of the semiconductor unit 811, The second electrode 842 includes a second electrode pad 8422 on the second semiconductor layer 123. In addition, the first electrode 841 having the first extending portion 8411 is formed on the remaining semiconductor units except for the semiconductor unit provided with the first electrode pad 8412, and the second extending portion 8421 is provided A second electrode 842 is formed on all the semiconductor units. The connection portion 843 forms a serial connection between the semiconductor units. The second electrode 842 on the semiconductor unit 811 where the first electrode pad 8412 is located is formed on the second semiconductor layer 123 and electrically connected to the first electrode Lt; / RTI > The first electrode 841 on the semiconductor unit 871 where the second electrode pad 8422 is located is on the first semiconductor layer 121 and is electrically connected to the second electrode 842, respectively.

25 shows a top view of an optoelectronic device 90 in accordance with a ninth embodiment of the present invention. The opto-electronic device 90 includes 48 semiconductor units, which are arranged in a plurality of rows 801, 802, 803, 804, 805, 806 and 807, respectively. The first electrode pad 9412 is formed on the second semiconductor layer 123 of the semiconductor unit 811 and is electrically connected to the first electrode pad 942 through the connection portion 843 A second electrode pad 9422 is formed on the second semiconductor layer 123 of the semiconductor unit 871 and a connection portion 843 is formed on the second semiconductor layer 123. [ And forms a series connection with the second electrode 82 of the semiconductor unit 872 through the second electrode 822. The resistance of the semiconductor unit 871 under the second electrode pad 9422 is lower than the resistance of the connection portion 843 when the external power supply current is injected from the second electrode pad 9422 and flows out from the first electrode pad 9412 again. The current is directly supplied from the second electrode pad 9422 to the first electrode 841 of the semiconductor unit 812 through the connection portion 843 because the current is larger than the resistance connected in series with the first electrode 841 of the semiconductor unit 812 And does not flow to the first semiconductor layer 121, the active region 122 and the second semiconductor layer 123 under the semiconductor unit 871. [ Similarly, the current flows to the first electrode 841 of the semiconductor unit 812 and flows to the first electrode pad 9412 through the connection portion 843, and then the first semiconductor layer 121 under the semiconductor unit 811, Does not flow into the region 122 and the second semiconductor layer 123 but directly emits to the external power source. Therefore, the semiconductor units 811 and 871 under the first electrode pad 9412 and the second electrode pad 9422 do not generate light. Further, in order to electrically isolate the electrode pad and the underlying semiconductor unit, an insulating layer is formed between the electrode pad and the semiconductor unit so that current is prevented from passing through the semiconductor layer under the electrode pad due to a large current.

Since the semiconductor units below the first electrode pad 9412 and the second electrode pad 9422 do not emit light, the area of the first electrode pad 9412 may be substantially the same as the area of the semiconductor unit 811, The area of the pad 9422 may be substantially the same as the area of the semiconductor unit 871, thereby increasing the yield of the wire manufacturing process. In addition, the first electrode pad 9412 of the photoelectric element 90 may also be associated with the second electrode pad 8422 of the photoelectric element 80, wherein the first electrode pad 9412 is connected to the semiconductor unit 811 And the second electrode pad 8422 is located on a portion of the second semiconductor layer 123 of the semiconductor unit 871. The second semiconductor layer 123 is formed on the second semiconductor layer 123, The first electrode pad 841 on the semiconductor unit 871 in which the second electrode pad 8422 is located does not emit light because the current does not flow into the semiconductor unit under the first electrode pad 9412, Is connected to the second electrode 842 of the unit 872 and when the current flows, the semiconductor unit 871 in which the second electrode pad 8422 is located emits light. Similarly, the second electrode pad 9422 of the photoelectric element 90 may be associated with the first electrode pad 8412 of the photoelectric element 80, where the first electrode pad 8412 is connected to the first electrode pad 8412 of the semiconductor unit 811 And the second electrode pad 9422 covers the entire upper surface of the second semiconductor layer 123 of the semiconductor unit 871 substantially entirely. The second electrode 842 on the semiconductor unit 811 where the first electrode pad is located is connected to the first electrode 841 of the semiconductor unit 812 through the connection part 843, The semiconductor unit 811 in which the pad 8422 is located emits light and the current flowing into the second electrode pad 9422 flows through the direct connection portion 843 without passing through the active region 122 of the semiconductor unit 871, Unit 872, the semiconductor unit 871 in which the second electrode pad 9422 is located does not emit light.

The material of the first semiconductor layer, the active layer and the second semiconductor layer includes one or a plurality of elements selected from the group consisting of Ga, Al, In, As, P, N and Si, AlGaN, InGaN, AlGaInN, GaP, GaAs, GaAsP, GaNAs or Si. The material of the substrate includes sapphire, GaAs, GaP, SiC, ZnO, GaN, AlN, Cu or Si.

Each of the embodiments enumerated in the present invention is used only for explaining the present invention, and does not limit the scope of the present invention. Any obvious modifications or alterations made to the present invention are not to be regarded as a departure from the spirit and scope of the invention.

10, 20, 30, 40, 50, 60, 70, 80, 90:
11, 21, 31, 41, 51, 61, 71, 81:
141, 241, 341, 441, 541, 641, 741, 841:
142, 242, 342, 442, 542, 642, 742, 842:
143, 243, 343, 443, 543, 643, 743, 843:
121: first semiconductor layer
123: second semiconductor layer
122: active zone
170: groove
111, < / RTI > 131:
1411, 2411, 3411, 4411, 5411, 6411, 7411, 8411:
1421, 2421, 3421, 4421, 5421, 6421, 7421, 8421:
1412, 2412, 3412, 4412, 5412, 6412, 7412, 8412, 9412:
1422, 2422, 3422, 4422, 5422, 6422, 7422, 8422, 9422:
105 to 109, 205 to 209, 305 to 309, 405 to 407, 505 to 507, 605 to 607, 705 to 707, and 801 to 807:
And the number of nucleotides in the nucleotide sequence of the nucleotide sequence of SEQ ID NO: 151 to 155, 161 to 165, 171 to 174, 181 to 185, 191 to 195, 251 to 255, 261 to 264, 271 to 275, 281 to 294, 291 to 295, 351 to 355, 361 to 364, 375, 381 to 384, 391 to 395, 41 to 455, 461 to 466, 471 to 465, 551 to 554, 561 to 563, 571 to 564, 651 to 664, 671, 672, 751, 752, 761, 762, 771, 712, 871, 872: semiconductor unit
1411a, 2411a: First curved stretching part
1421a and 2421a: the second curve stretching part
1421b, 2421b, 3411b, and 441a:
1411c, 1421c, 2411c, 3411c, and 4411c:
3411a: Curved stretcher

Claims (10)

As a photoelectric device,
Board;
A plurality of semiconductor units provided on the substrate along a first direction and having a rectangular shape and including a first semiconductor unit, a second semiconductor unit, and a third semiconductor unit, wherein each semiconductor unit has a first side and a first side, Wherein the first side and the second side are parallel to the first direction;
A first electrode located on the first semiconductor layer;
A second electrode located on the second semiconductor layer;
And a second semiconductor layer disposed between the first semiconductor unit and the second semiconductor unit and extending from the first semiconductor layer of the first semiconductor unit to the second semiconductor layer of the second semiconductor unit along the first direction, ; And
And a second connection portion which is located between the second semiconductor unit and the third semiconductor unit and extends from the first semiconductor layer of the second semiconductor unit to the second semiconductor layer of the third semiconductor unit along the first direction, ;
Lt; / RTI >
Wherein the first connection portion is closer to the first side than the second side of the photoelectric element and the second connection portion of the photoelectric element is closer to the second side than the first side of the photoelectric element in a plan view of the photoelectric element. Close-up,
Photoelectric device. The method according to claim 1,
Wherein the first electrode includes a first extending portion that is not parallel to the first direction, and the second electrode includes a second extending portion that is not parallel to the first direction. The method according to claim 1,
Wherein the first semiconductor unit, the second semiconductor unit, and the third semiconductor unit include the same rectangular shape. The method according to claim 1,
Wherein the first semiconductor unit, the second semiconductor unit, and the third semiconductor unit have the same area. The method according to claim 1,
Wherein the first electrode located on the first semiconductor unit and the first electrode located on the third semiconductor unit have the same electrode pattern or the second electrode located on the first semiconductor unit and the third semiconductor unit has the same electrode ≪ / RTI > 6. The method of claim 5,
The first electrode located on the first semiconductor unit and the first electrode located on the second semiconductor unit may have different electrode patterns or the second electrode located on the first semiconductor unit and the second semiconductor unit may have different electrode patterns, ≪ / RTI > The method according to claim 1,
Wherein the first semiconductor unit, the second semiconductor unit and the third semiconductor unit each have a long side and a short side, the long side is longer than the short side, the short side is parallel to the first direction, Wherein the long side is perpendicular to the first direction. 8. The method of claim 7,
Wherein the first connecting portion is located between a long side of the first semiconductor unit and a long side of the second semiconductor unit and the second connecting portion is located between a long side of the second semiconductor unit and a long side of the third semiconductor unit Optoelectronic devices. 3. The method of claim 2,
Wherein a width of the first connecting portion is larger than a width of the first extending portion or a width of the second connecting portion is wider than a width of the second extending portion. The method according to claim 1,
Further comprising a dividing channel located between the plurality of semiconductor units to leak the substrate, wherein the first connecting portion and the second connecting portion are located on the substrate of the dividing channel.

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