TW201104753A - Method for manufacturing a thin film transistor and a structure of the same - Google Patents
Method for manufacturing a thin film transistor and a structure of the same Download PDFInfo
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- TW201104753A TW201104753A TW098124483A TW98124483A TW201104753A TW 201104753 A TW201104753 A TW 201104753A TW 098124483 A TW098124483 A TW 098124483A TW 98124483 A TW98124483 A TW 98124483A TW 201104753 A TW201104753 A TW 201104753A
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- thin film
- oxide
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- film transistor
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- 239000010409 thin film Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 230000007547 defect Effects 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 31
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910001954 samarium oxide Inorganic materials 0.000 claims description 2
- 229940075630 samarium oxide Drugs 0.000 claims description 2
- 229910004205 SiNX Inorganic materials 0.000 claims 2
- 239000004575 stone Substances 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910000831 Steel Inorganic materials 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims 1
- 229910000420 cerium oxide Inorganic materials 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000000137 annealing Methods 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- AHICWQREWHDHHF-UHFFFAOYSA-N chromium;cobalt;iron;manganese;methane;molybdenum;nickel;silicon;tungsten Chemical compound C.[Si].[Cr].[Mn].[Fe].[Co].[Ni].[Mo].[W] AHICWQREWHDHHF-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229910001347 Stellite Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- VODBHXZOIQDDST-UHFFFAOYSA-N copper zinc oxygen(2-) Chemical compound [O--].[O--].[Cu++].[Zn++] VODBHXZOIQDDST-UHFFFAOYSA-N 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000009643 growth defect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
201104753 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種薄膜電晶體之製造方法，特別是一種以 紫外波段光源照射方式進行光退火製程之薄膜電晶體的製造方法 及其結構。 【先前技術】 薄膜電晶體(thin-film transistors，TFT)可應用於液晶顯示器 (liquid crystal display，LCD)之驅動元件，例如應用於主動式液晶 顯示器的驅動上，或是應用於靜態隨機存料己憶體(static福啦 access memory，SRAM)内做為主動負載。以氧化物薄膜電晶體製 作出來的光電元件具有製造簡易及複合式功能的特性，例如全透 明元件、可撓、輕巧、製程環保、及可大面積製造與整合等優點。 氧化物薄膜電晶體的特性已接近一般多晶矽電晶體的特性，並且 具有非常高的穩定性，致使氧化物薄膜電晶體可運用於製作各種 光電元件。 一般來說，液晶顯示器之氧化物薄膜電晶體於低溫沉積之 後，其氧化物薄膜内部存在有一定程度之缺陷，進而影響光電元 件的電特性。為了使液晶顯示器(LCD)能夠達到高晝質、高亮度、 及高解析度的要求’目前習用的技術係將氧化物薄膜電晶體以整 批(batch)方式送入退火爐内進行常規熱退火(regular thermal annealing)製程，藉以消除氧化物薄膜電晶體的内部缺陷；或者是， 對氧化物薄膜電晶體進行快速熱退火(rapid thermal annealing)製 201104753 程’藉以消除氧化物薄膜電晶體的内部缺陷。 常規熱退火製程或是快速熱退火製程的處理時間雖然不同， 但^係對氧化物薄膜電晶體進行全面的高溫加熱。由於過高的熱 退火溫度造成習用液晶顯示器之基板於材質的選用上多所限制， 因此無法使用熔點較低的玻璃基板或是塑膠基板，相對侷限了液 晶顯示器的日後發展。 【發明内容】 鑒於以上的問題，本發明提供一種薄膜電晶體之製造方法及 其結構，藉以改良習用氧化物薄膜電晶體所採用之熱退火製程的 處理溫度過高’所導致之材簡性劣化及基板之材f的選用受到 熱退火製程的侷限等問題。 本發明所揭露之細電晶_製造方法及其結構，其製造方 法的步驟包括有··首先提供—基板，並且形成—介電層於基板的 -側面上，以及形成—氧化_膜於介電層上，以做為主動層。 接著，對氧化物薄膜照射紫外波段光源以執行一光退火製程，而 乳化物薄膜魏此-料波段統後產生—熱能，以最佳化薄膜 修正薄膜可能存在之不穩定鍵結、或減少懸浮鍵結， 2達修舰溫絲所叙氧㈣__找陷。 2製程’於氧化物薄膜上形成源極與汲極，以構成薄膜電晶體 本發明之_電㈣㈣狀歧其簡，_由紫外波段 取代習用薄臈電 201104753 B曰體係^爐管熱退火或是快速熱退火的方式，以修復氧化物薄 \ 成長下的缺陷，得到具有高效能的細電晶體元件，同 時薄膜電晶體之基板的材質選擇亦不受退火製㈣有所限制，本 發明的製財法相當適合制於製造以可撓崎舰為基板的薄 膜電晶體。 一、之關於本發明内容之說明及以下之實施方式之說明係用 以不範與解釋本發明之原理，並且提供本發明之專利申請範圍更 進一步之解釋。 【實施方式】 曰根據本發騎揭露之自我解_電晶體，可_於薄膜電 日日體液日日肩示器(Tpp.LCD)面板及靜態隨機存取記憶體等裝置，而 本發明係以薄職晶體液晶顯示ϋ做為實施例的說明，但並不以 此為限。 「第1圖」為本發明一實施例之步驟流程圖，以及「第2圖」 為本發明-實施例之結構示意圖。如「第】圖」所示，並請配合 「第2圖」一併參酌，本發明所揭露之薄膜電晶體之製造方法， 首先係提供-基板61G(步驟_，絲板61G具有—侧面611(即 基板610_表面）。其中，本發明所揭露之基板61〇的材質可為 矽(Sl)7G素、玻璃材料、或是塑膠材料，以分別製成矽基板、玻璃 基板、或是塑膠基板’但並不以此為限。值得注意的是，若基板 610為玻璃基板或是塑膠基板，則必須於基板61〇上再形成一層透 明電極(®中未示），然此—技術手段已為目前半導體製造技術中所 201104753 知悉之手段，故不贅敘。 接著，形成介電層(dielectric layer)620於基板610的侧面611 上(步驟200)，其中本發明之介電層62〇的材質為氮化石夕(siNx)材 料或是氧化矽(Si〇2)材料，但並不以此為限。並且，本發明之介電 層620係藉由化學氣相沉積(chemicai Vapor Deposition，CVD)方 式形成於基板610的侧面611上，但並不以此為限，且介電層62〇 的厚度約為1000埃(A)。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thin film transistor, and more particularly to a method and a structure for manufacturing a thin film transistor which is subjected to a photo annealing process by ultraviolet light source illumination. [Prior Art] Thin-film transistors (TFTs) can be applied to driving elements of liquid crystal displays (LCDs), for example, for driving on active liquid crystal displays, or for static random storage. Active memory (SRAM) as an active load. Optoelectronic components made of oxide thin film transistors have the characteristics of simple manufacturing and compound functions, such as fully transparent components, flexibility, light weight, environmentally friendly process, and large-area manufacturing and integration. The characteristics of the oxide thin film transistor are close to those of a general polycrystalline germanium transistor, and have a very high stability, so that the oxide thin film transistor can be applied to various photovoltaic elements. In general, after the low-temperature deposition of the oxide thin film transistor of the liquid crystal display, there is a certain degree of defects inside the oxide film, which in turn affects the electrical characteristics of the photovoltaic element. In order to achieve high enamel, high brightness, and high resolution requirements for liquid crystal displays (LCDs), the current technology is to send oxide thin film transistors into an annealing furnace in a batch manner for conventional thermal annealing. (regular thermal annealing) process to eliminate internal defects of oxide thin film transistors; or, rapid thermal annealing of oxide thin film transistors 201104753 to eliminate internal defects of oxide thin film transistors . Although the processing time of the conventional thermal annealing process or the rapid thermal annealing process is different, the oxide film is subjected to comprehensive high-temperature heating. Due to the excessively high thermal annealing temperature, the substrate of the conventional liquid crystal display is limited in material selection, so that the glass substrate or the plastic substrate having a lower melting point cannot be used, which limits the future development of the liquid crystal display. SUMMARY OF THE INVENTION In view of the above problems, the present invention provides a method for fabricating a thin film transistor and a structure thereof, thereby improving the deterioration of material properties caused by excessively high processing temperature of a thermal annealing process used in conventional oxide thin film transistors. The selection of the material f of the substrate is limited by the limitations of the thermal annealing process. The fine electric crystal_manufacturing method and structure thereof disclosed in the present invention, the steps of the manufacturing method include: first providing a substrate, and forming a dielectric layer on the side surface of the substrate, and forming an oxidized film On the electrical layer, as the active layer. Next, the oxide film is irradiated with an ultraviolet band light source to perform a photo-annealing process, and the emulsion film is generated by the heat-dissipating band to optimize the unstable bonding of the film-correcting film or to reduce the suspension. Bonding, 2 the repair of the ship Wensi's oxygen (four) __ trap. 2 Process 'forms a source and a drain on the oxide film to form a thin film transistor. The invention is based on the invention. The _ electric (four) (four) shape is simplified, and the ultraviolet band is substituted for the conventional thin 臈 2011 201104753 B 曰 system ^ furnace tube thermal annealing or It is a rapid thermal annealing method to repair oxide thin/growth defects, and obtain a high-performance thin crystal element, and the material selection of the substrate of the thin film transistor is not limited by the annealing system (4). The method of making money is quite suitable for the manufacture of thin film transistors with a flexible island as a substrate. The description of the present invention and the following description of the embodiments of the present invention are intended to be illustrative of the principles of the invention. [Embodiment] 自我 According to the self-explanation of the present invention, the transistor can be used for a thin film electric day and day liquid body (Tpp. LCD) panel and a static random access memory device, and the present invention is The thin-film crystal liquid crystal display is used as an example of the embodiment, but is not limited thereto. Fig. 1 is a flow chart showing the steps of an embodiment of the present invention, and Fig. 2 is a schematic view showing the structure of the present invention. As shown in the "Fig. 2", please refer to the "Fig. 2" together. The method for manufacturing a thin film transistor disclosed in the present invention first provides a substrate 61G (step _, the wire plate 61G has a side surface 611). (ie, the surface of the substrate 610_). The material of the substrate 61〇 disclosed in the present invention may be a stellite (Sl) 7G element, a glass material, or a plastic material to be respectively made into a ruthenium substrate, a glass substrate, or a plastic. The substrate 'is not limited thereto. It should be noted that if the substrate 610 is a glass substrate or a plastic substrate, a transparent electrode (not shown in the ®) must be formed on the substrate 61. However, the technical means It has been described in the current semiconductor manufacturing technology as 201104753, and therefore is not described. Next, a dielectric layer 620 is formed on the side 611 of the substrate 610 (step 200), wherein the dielectric layer 62 of the present invention The material is made of a silicon nitride (siNx) material or a yttrium oxide (Si〇2) material, but is not limited thereto. Moreover, the dielectric layer 620 of the present invention is formed by chemical vapor deposition (chemicai Vapor Deposition, A CVD) method is formed on the side 611 of the substrate 610 , But not limited thereto, and the thickness of the dielectric layer 62〇 approximately 1000 angstroms (A).
接者，形成一氧化物薄膜(欣丨心脇£11111)630於介電層_上 (步驟300) ’而氧化物薄膜㈣係做為主動層(a— b㈣。其中 氧化物_ 630的材質可為氧化鋅(Zn曜料、崎氧化物(ιζ〇) 材料、或銦鎵鋅氧化物(IGZq)材料，以分別製成氧化鋅(Zn〇)薄 膜、铜鋅氧化物卿)薄膜、或鱗鋅氧化物卿〇)薄膜，但並不 乂此為限且本發明之氧化物薄膜63〇的厚度約為^奈米㈣）。 請繼續參閱「第1圖」及「第2圖」，於形成氧化物薄膜630(步 驟3〇〇)之後，接著對氧化物薄膜㈣照射紫外波段光源(步驟 ，’且照射時間為！小時至2小時，以執行—光退火製程。「第 1圖二不為本發明之氧化物薄膜的光譜圖，由圖式何得知，本 ==物薄膜㈣在波長約20。奈米至 具備有南吸收性的特性，即本發明之氧化物薄膜63〇在可見光波 長區段之_為完全透光，而在料波段 / =高吸收的特性(亦即低穿透的特性)。而於本發 的步驟中’所選用的紫外波段光源之波長約介於、m奈 7 201104753 米至308奈米之間，因此氧化物_㈣吸收所照射之紫外波段 光源\，並且將紫外波段光源的光子能量轉換為熱能，氧化物^ 630藉由熱能的驅動以使氧化物薄膜㈣ 化，並且修正氧化物薄膜咖可能存在的不穩定鍵結== 懸洋鍵結’航修魏溫縣所狀輸物_㈣原本存在於 其中的缺陷(defect例如為點缺陷、線缺陷、或是面缺點），藉以大 幅提高氧化物薄膜630的材料特性。 9 另外’本發明所揭露之光退火製程，亦可採用準分子雷射 (exdmer㈣’例如為如雅絡⑽⑽雷射對氧化物薄膜㈣ 進行照射，吨行歧讀n若是_能社製程，其 照射時間僅須數個奈秒(1〇-9秒，㈣即可。 、 請繼續參閱「第1圖」及「第2圖」，接著執行-光罩製程， 以於氧化物_㈣上形成源極_與祕6零驟夠。其中， 源極64〇與汲極MO的材f可為鈦⑼金屬或是翻陶金屬，但並 ^以此為限’且本發明之源極64〇與汲極65〇的厚度約為胸奈 ^上述賴程步驟，料成如「第2圖」麻之本發明的 、a曰體600’其包括有基板⑽及依序設置於基板_上之介 電層62〇、氧化物薄膜63()、源極柳、與汲極咖。 簿腔，Γ撕揭露之_電晶_製造方法及其結構，其氧化物 退專透過料波__進_火，取代_爐管熱 、’程方式或是快速熱退火製程，使得氧化物_的缺陷獲得 201104753 =復而得到更良好的材料植，以A幅提高_電晶體的運作效 。同時，本發明薄膜電晶體之基板的材質選擇亦不受光退火製 程而有所限制’因此本發明之製程步驟相當適合應用於製造以= 撓性材料做為基板的薄膜電晶體。 雖然本發明之實施例揭露如上所述，然並非用以限定本發 明，任何熟習相關技藝者，在不脫離本發明之精神和範圍内，舉 馨凡依本發明申請範騎述之形狀、構造、賴及精神當可做些許 之變更，ϋ此本發明之專娜護範圍織本書_之申請專 利範圍所界定者為準。 月 【圖式簡單說明】 第1圖為本發明一實施例之步驟流程圖； 第2圖為本發明一實施例之結構示意圖；以及 第3圖為本發明一實施例之波長·紫外波段光源吸收率之光譜圖。 B【i要元件魏綱】 步驟100 提供一基板 步驟200 形成介電層於基板之側面上 步驟300 形成氧化物薄膜於介電層上 步驟400 對氧化物薄膜照射紫外波段光源 步驟50G執行光罩製程’崎氧化物麵上形成源極與波極 600 薄膜電晶體 610 基板 9 201104753 611 側面 620 介電層 630 氧化物薄膜 640 源極 650 汲極Then, an oxide film (Xinyi Xintong £11111) 630 is formed on the dielectric layer_(step 300)' and the oxide film (4) is used as the active layer (a-b(4). The material of the oxide _630 It may be zinc oxide (Zn bismuth, samarium oxide (ITO) material, or indium gallium zinc oxide (IGZq) material, respectively, to form a zinc oxide (Zn 〇) film, copper zinc oxide film), or The film of the scale zinc oxide is not limited thereto, and the thickness of the oxide film 63 of the present invention is about ^ nanometer (4)). Please continue to refer to "1" and "2". After the oxide film 630 is formed (step 3), the oxide film (4) is then irradiated with an ultraviolet band light source (step, 'and the irradiation time is ! hours to 2 hours, to perform the photo-annealing process. "Figure 1 is not the spectrum of the oxide film of the present invention. It is known from the figure that the film = (4) has a wavelength of about 20. The south absorptive property, that is, the oxide film 63 of the present invention is completely transparent in the visible light wavelength section, and has a high absorption characteristic (ie, low penetration property) in the material band. In the step of sending, the wavelength of the selected ultraviolet-band source is about Between, and the ray is illuminating from the ultraviolet ray source, and the photon of the ultraviolet ray source is absorbed. The energy is converted into thermal energy, and the oxide ^ 630 is driven by thermal energy to make the oxide film (4), and the unstable bond of the oxide film may be corrected. == Suspended key junction 'Aircraft Weiwen County _ (4) Defects originally present in it (defect example) For point defects, line defects, or surface defects, the material properties of the oxide film 630 are greatly improved. 9 In addition, the photo-annealing process disclosed in the present invention may also employ an excimer laser (exdmer (four)' such as The (10) (10) laser irradiates the oxide film (4), and if the ton line is read, the irradiation time is only a few nanoseconds (1〇-9 seconds, (4). Please continue to refer to "1st." Figure and "Fig. 2", followed by a photomask process to form a source _ and a secret CMOS on the oxide _(4). The source 64 〇 and the MO MO MO material f can be titanium. (9) Metal or ceramic metal, but the limit is 'and the thickness of the source 64 〇 and the 汲 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 The a body 600' of the present invention includes a substrate (10) and a dielectric layer 62 依, an oxide film 63 (), a source of a thin layer, and a 汲 咖 咖. Tear the disclosure of the _ electro-crystal _ manufacturing method and its structure, its oxide retreats through the material wave __ into the fire, replace _ furnace tube heat, 'process mode or fast The thermal annealing process makes the defect of the oxide_201104753 = a better material planting, and the A film is improved. The material selection of the substrate of the thin film transistor of the present invention is also not affected by the photo annealing process. However, there are limitations. Therefore, the process steps of the present invention are quite suitable for use in the manufacture of a thin film transistor using a flexible material as a substrate. Although the embodiments of the present invention are disclosed above, it is not intended to limit the invention, and any familiarity A person skilled in the art can make a slight change in the shape, structure, and spirit of the application of the fan ride according to the invention without departing from the spirit and scope of the present invention. The scope defined in the patent application scope of this book shall prevail. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart showing the steps of an embodiment of the present invention; FIG. 2 is a schematic structural view of an embodiment of the present invention; and FIG. 3 is a wavelength/ultraviolet band light source according to an embodiment of the present invention. Spectrogram of absorption rate. B [i required component Wei Gang] Step 100 provides a substrate step 200 to form a dielectric layer on the side of the substrate. Step 300 forms an oxide film on the dielectric layer. Step 400: Irradiating the oxide film with an ultraviolet band source. Step 50G Performing a mask Process 'Soda oxide surface forming source and wave 600 thin film transistor 610 substrate 9 201104753 611 side 620 dielectric layer 630 oxide film 640 source 650 bungee
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| TW098124483A TWI462183B (en) | 2009-07-20 | 2009-07-20 | Method for manufacturing thin film transistor |
| KR1020090092909A KR20110009003A (en) | 2009-07-20 | 2009-09-30 | Method of manufacturing thin film transistor and structure thereof |
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| TWI462183B TWI462183B (en) | 2014-11-21 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116804270A (en) * | 2023-08-29 | 2023-09-26 | 上海陛通半导体能源科技股份有限公司 | Low-temperature deposition method and device preparation method of silicon dioxide film |
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| KR20130043944A (en) * | 2011-10-21 | 2013-05-02 | 제일모직주식회사 | Thin film transistor array substrate and the fabrication method thereof |
| WO2014113032A1 (en) * | 2013-01-21 | 2014-07-24 | Hewlett-Packard Development Company, L.P. | Thin film stack |
| CN106033731B (en) * | 2015-03-13 | 2019-11-05 | 联华电子股份有限公司 | Semiconductor element and manufacturing method thereof |
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| JPH11102867A (en) * | 1997-07-16 | 1999-04-13 | Sony Corp | Method of forming semiconductor thin film and plastic substrate |
| JP2009099847A (en) * | 2007-10-18 | 2009-05-07 | Canon Inc | Thin-film transistor, its manufacturing method, and display device |
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2009
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116804270A (en) * | 2023-08-29 | 2023-09-26 | 上海陛通半导体能源科技股份有限公司 | Low-temperature deposition method and device preparation method of silicon dioxide film |
| CN116804270B (en) * | 2023-08-29 | 2023-11-10 | 上海陛通半导体能源科技股份有限公司 | Low-temperature deposition method and device preparation method of silicon dioxide film |
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| KR20110009003A (en) | 2011-01-27 |
| TWI462183B (en) | 2014-11-21 |
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