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TW200833885A - Nitride semiconductor device and nitride semiconductor manufacturing method - Google Patents

Nitride semiconductor device and nitride semiconductor manufacturing method

Info

Publication number
TW200833885A
TW200833885A TW096148118A TW96148118A TW200833885A TW 200833885 A TW200833885 A TW 200833885A TW 096148118 A TW096148118 A TW 096148118A TW 96148118 A TW96148118 A TW 96148118A TW 200833885 A TW200833885 A TW 200833885A
Authority
TW
Taiwan
Prior art keywords
nitride semiconductor
iii
semiconductor layer
ratio
iii nitride
Prior art date
Application number
TW096148118A
Other languages
English (en)
Chinese (zh)
Inventor
Kuniyoshi Okamoto
Hiroaki Ohta
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of TW200833885A publication Critical patent/TW200833885A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW096148118A 2006-12-14 2007-12-14 Nitride semiconductor device and nitride semiconductor manufacturing method TW200833885A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006337249A JP2008153285A (ja) 2006-12-14 2006-12-14 窒化物半導体装置および窒化物半導体製造方法

Publications (1)

Publication Number Publication Date
TW200833885A true TW200833885A (en) 2008-08-16

Family

ID=39511622

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096148118A TW200833885A (en) 2006-12-14 2007-12-14 Nitride semiconductor device and nitride semiconductor manufacturing method

Country Status (3)

Country Link
JP (1) JP2008153285A (ja)
TW (1) TW200833885A (ja)
WO (1) WO2008072601A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102754226A (zh) * 2010-04-28 2012-10-24 松下电器产业株式会社 氮化物系半导体元件及其制造方法
TWI401729B (zh) * 2008-10-16 2013-07-11 Advanced Optoelectronic Tech 阻斷半導體差排缺陷之方法
US8580590B2 (en) 2008-10-13 2013-11-12 Advanced Optoelectronic Technology, Inc. Method for manufacturing polychromatic light emitting diode device having wavelength conversion layer made of semiconductor
CN104205297A (zh) * 2012-03-21 2014-12-10 首尔伟傲世有限公司 制造非极性氮化镓基半导体层的方法、非极性半导体器件及其制造方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4572963B2 (ja) * 2008-07-09 2010-11-04 住友電気工業株式会社 Ｉｉｉ族窒化物系半導体発光素子、及びエピタキシャルウエハ
WO2010052810A1 (ja) 2008-11-06 2010-05-14 パナソニック株式会社 窒化物系半導体素子およびその製造方法
EP2273573A4 (en) * 2009-03-11 2012-11-14 Panasonic Corp NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
WO2010113238A1 (ja) * 2009-04-03 2010-10-07 パナソニック株式会社 窒化物系半導体素子およびその製造方法
WO2010113237A1 (ja) * 2009-04-03 2010-10-07 パナソニック株式会社 窒化物系半導体素子およびその製造方法
US8058639B2 (en) 2009-04-06 2011-11-15 Panasonic Corporation Nitride semiconductor element and method for production thereof
WO2011077704A1 (ja) * 2009-12-25 2011-06-30 パナソニック株式会社 窒化物系半導体素子およびその製造方法
EP2369645A4 (en) 2010-01-18 2012-11-14 Panasonic Corp NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
KR101752407B1 (ko) 2010-02-24 2017-07-11 엘지전자 주식회사 질화물 반도체 소자 제조방법
EP2541624A4 (en) * 2010-04-01 2013-05-15 Panasonic Corp NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
JP5776021B2 (ja) 2010-04-02 2015-09-09 パナソニックＩｐマネジメント株式会社 窒化物系半導体素子及び光源
JPWO2011135866A1 (ja) 2010-04-28 2013-07-18 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP5641505B2 (ja) * 2011-04-22 2014-12-17 パナソニックＩｐマネジメント株式会社 窒化物系半導体発光素子の製造方法
JP5682716B2 (ja) * 2014-01-09 2015-03-11 三菱化学株式会社 窒化物半導体
JP2022095485A (ja) * 2020-12-16 2022-06-28 豊田合成株式会社 発光素子及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3832313B2 (ja) * 2001-11-02 2006-10-11 日亜化学工業株式会社 窒化物半導体の成長方法及び窒化物半導体
SG135924A1 (en) * 2003-04-02 2007-10-29 Sumitomo Electric Industries Nitride-based semiconductor epitaxial substrate, method of manufacturing the same, and hemt substrate
WO2005112123A2 (en) * 2004-05-10 2005-11-24 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
JP4781028B2 (ja) * 2004-07-21 2011-09-28 昭和電工株式会社 Ｉｉｉ族窒化物半導体積層体及びｉｉｉ族窒化物半導体発光素子の製造方法
JP4140606B2 (ja) * 2005-01-11 2008-08-27 ソニー株式会社 ＧａＮ系半導体発光素子の製造方法
JP4915128B2 (ja) * 2005-04-11 2012-04-11 日亜化学工業株式会社 窒化物半導体ウエハ及びその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8580590B2 (en) 2008-10-13 2013-11-12 Advanced Optoelectronic Technology, Inc. Method for manufacturing polychromatic light emitting diode device having wavelength conversion layer made of semiconductor
TWI416757B (zh) * 2008-10-13 2013-11-21 Advanced Optoelectronic Tech 多波長發光二極體及其製造方法
TWI401729B (zh) * 2008-10-16 2013-07-11 Advanced Optoelectronic Tech 阻斷半導體差排缺陷之方法
CN102754226A (zh) * 2010-04-28 2012-10-24 松下电器产业株式会社 氮化物系半导体元件及其制造方法
CN102754226B (zh) * 2010-04-28 2015-07-15 松下电器产业株式会社 氮化物系半导体元件及其制造方法
CN104205297A (zh) * 2012-03-21 2014-12-10 首尔伟傲世有限公司 制造非极性氮化镓基半导体层的方法、非极性半导体器件及其制造方法
US9966497B2 (en) 2012-03-21 2018-05-08 Seoul Viosys Co., Ltd. Method of fabricating nonpolar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same
CN104205297B (zh) * 2012-03-21 2018-06-15 首尔伟傲世有限公司 制造非极性氮化镓基半导体层的方法、非极性半导体器件及其制造方法

Also Published As

Publication number Publication date
JP2008153285A (ja) 2008-07-03
WO2008072601A1 (ja) 2008-06-19

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