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TW200725721A - Polishing method, polishing composition and polishing composition kit - Google Patents

Polishing method, polishing composition and polishing composition kit

Info

Publication number
TW200725721A
TW200725721A TW095136127A TW95136127A TW200725721A TW 200725721 A TW200725721 A TW 200725721A TW 095136127 A TW095136127 A TW 095136127A TW 95136127 A TW95136127 A TW 95136127A TW 200725721 A TW200725721 A TW 200725721A
Authority
TW
Taiwan
Prior art keywords
polishing
polishing composition
water
soluble polymer
isolation region
Prior art date
Application number
TW095136127A
Other languages
English (en)
Inventor
Mikikazu Shimizu
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of TW200725721A publication Critical patent/TW200725721A/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW095136127A 2005-09-30 2006-09-29 Polishing method, polishing composition and polishing composition kit TW200725721A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005289170A JP2007103515A (ja) 2005-09-30 2005-09-30 研磨方法

Publications (1)

Publication Number Publication Date
TW200725721A true TW200725721A (en) 2007-07-01

Family

ID=37489813

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136127A TW200725721A (en) 2005-09-30 2006-09-29 Polishing method, polishing composition and polishing composition kit

Country Status (7)

Country Link
US (1) US20070077764A1 (zh)
EP (1) EP1770768A3 (zh)
JP (1) JP2007103515A (zh)
KR (1) KR20070037409A (zh)
CN (1) CN1939663A (zh)
SG (1) SG131099A1 (zh)
TW (1) TW200725721A (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007035266B4 (de) * 2007-07-27 2010-03-25 Siltronic Ag Verfahren zum Polieren eines Substrates aus Silicium oder einer Legierung aus Silicium und Germanium
JP5261065B2 (ja) * 2008-08-08 2013-08-14 シャープ株式会社 半導体装置の製造方法
SG10201604609WA (en) 2011-06-14 2016-07-28 Fujimi Inc Polishing Composition
CN103890114B (zh) * 2011-10-24 2015-08-26 福吉米株式会社 研磨用组合物、使用了其的研磨方法和基板的制造方法
US8440094B1 (en) * 2011-10-27 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate
US8435420B1 (en) * 2011-10-27 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing using tunable polishing formulation
JP5927059B2 (ja) * 2012-06-19 2016-05-25 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた基板の製造方法
JP2015086355A (ja) * 2013-09-27 2015-05-07 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、及び基板の製造方法
JP6343160B2 (ja) * 2014-03-28 2018-06-13 株式会社フジミインコーポレーテッド 研磨用組成物
JP6314019B2 (ja) * 2014-03-31 2018-04-18 ニッタ・ハース株式会社 半導体基板の研磨方法
JP6389630B2 (ja) * 2014-03-31 2018-09-12 ニッタ・ハース株式会社 研磨用組成物
JP6389629B2 (ja) * 2014-03-31 2018-09-12 ニッタ・ハース株式会社 研磨用組成物
JP6377656B2 (ja) 2016-02-29 2018-08-22 株式会社フジミインコーポレーテッド シリコン基板の研磨方法および研磨用組成物セット
WO2018025655A1 (ja) * 2016-08-02 2018-02-08 株式会社フジミインコーポレーテッド シリコンウェーハ粗研磨用組成物の濃縮液
US10822524B2 (en) 2017-12-14 2020-11-03 Rohm And Haas Electronic Materials Cmp Holdings, I Aqueous compositions of low dishing silica particles for polysilicon polishing
TWI829666B (zh) 2018-03-15 2024-01-21 日商福吉米股份有限公司 研磨用組成物、研磨用組成物之製造方法、研磨方法及半導體基板之製造方法
KR102082922B1 (ko) * 2019-03-04 2020-04-23 영창케미칼 주식회사 실리콘산화막 연마용 슬러리 조성물 및 그를 이용한 연마방법
JP7409899B2 (ja) 2020-02-18 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
KR20220131152A (ko) 2021-03-19 2022-09-27 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 연마 방법, 및 반도체 기판의 제조 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
US4462188A (en) * 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
US4588421A (en) * 1984-10-15 1986-05-13 Nalco Chemical Company Aqueous silica compositions for polishing silicon wafers
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
SG54606A1 (en) * 1996-12-05 1998-11-16 Fujimi Inc Polishing composition
JP3810588B2 (ja) * 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
US6533832B2 (en) * 1998-06-26 2003-03-18 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
JP2001077060A (ja) * 1999-09-08 2001-03-23 Toshiba Corp 半導体装置の製造方法
KR100378180B1 (ko) * 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
JP3440419B2 (ja) * 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US7367870B2 (en) * 2002-04-30 2008-05-06 Hitachi Chemical Co. Ltd. Polishing fluid and polishing method
JP4554363B2 (ja) * 2002-07-22 2010-09-29 Agcセイミケミカル株式会社 半導体用研磨剤、その製造方法及び研磨方法
US7005382B2 (en) * 2002-10-31 2006-02-28 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
US7314578B2 (en) * 2003-12-12 2008-01-01 Samsung Electronics Co., Ltd. Slurry compositions and CMP methods using the same

Also Published As

Publication number Publication date
EP1770768A2 (en) 2007-04-04
EP1770768A3 (en) 2008-07-02
JP2007103515A (ja) 2007-04-19
CN1939663A (zh) 2007-04-04
KR20070037409A (ko) 2007-04-04
SG131099A1 (en) 2007-04-26
US20070077764A1 (en) 2007-04-05

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