[go: up one dir, main page]

TW200634985A - Semiconductor device and MIM capacitor - Google Patents

Semiconductor device and MIM capacitor

Info

Publication number
TW200634985A
TW200634985A TW094120949A TW94120949A TW200634985A TW 200634985 A TW200634985 A TW 200634985A TW 094120949 A TW094120949 A TW 094120949A TW 94120949 A TW94120949 A TW 94120949A TW 200634985 A TW200634985 A TW 200634985A
Authority
TW
Taiwan
Prior art keywords
insulation film
conductor patterns
continuously
conductor
interlayer insulation
Prior art date
Application number
TW094120949A
Other languages
English (en)
Other versions
TWI296144B (en
Inventor
Osamu Iioka
Ikuto Fukuoka
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of TW200634985A publication Critical patent/TW200634985A/zh
Application granted granted Critical
Publication of TWI296144B publication Critical patent/TWI296144B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW094120949A 2005-03-17 2005-06-23 Semiconductor devcie and mim capacitor TWI296144B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005078012A JP2006261455A (ja) 2005-03-17 2005-03-17 半導体装置およびｍｉｍキャパシタ

Publications (2)

Publication Number Publication Date
TW200634985A true TW200634985A (en) 2006-10-01
TWI296144B TWI296144B (en) 2008-04-21

Family

ID=37002917

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120949A TWI296144B (en) 2005-03-17 2005-06-23 Semiconductor devcie and mim capacitor

Country Status (4)

Country Link
US (2) US7126809B2 (zh)
JP (1) JP2006261455A (zh)
CN (2) CN100466254C (zh)
TW (1) TWI296144B (zh)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY136744A (en) * 2004-10-14 2008-11-28 Silterra Malaysia Sdn Bhd An improved on-chip capacitor
JP2006332290A (ja) * 2005-05-25 2006-12-07 Elpida Memory Inc 容量素子、半導体装置及び半導体装置のパッド電極の端子容量設定方法
US20070181973A1 (en) * 2006-02-06 2007-08-09 Cheng-Chou Hung Capacitor structure
US8330251B2 (en) * 2006-06-26 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure for reducing mismatch effects
US7838919B2 (en) * 2007-03-29 2010-11-23 Panasonic Corporation Capacitor structure
JP5274857B2 (ja) * 2007-03-29 2013-08-28 パナソニック株式会社 キャパシタ構造
CN100501952C (zh) * 2007-05-09 2009-06-17 日月光半导体制造股份有限公司 具有埋入被动元件的晶粒承载用封装基板及其制造方法
JPWO2008142857A1 (ja) * 2007-05-16 2010-08-05 パナソニック株式会社 半導体集積回路
KR101172783B1 (ko) * 2007-10-03 2012-08-10 후지쯔 세미컨덕터 가부시키가이샤 용량 소자 및 반도체 장치
US8022458B2 (en) * 2007-10-08 2011-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitors integrated with metal gate formation
WO2009051296A1 (en) * 2007-10-19 2009-04-23 Young Joo Oh Metal capacitor and manufacturing method thereof
WO2009051297A1 (en) * 2007-10-19 2009-04-23 Young Joo Oh Metal capacitor and manufacturing method thereof
WO2009051294A1 (en) * 2007-10-19 2009-04-23 Young Joo Oh Metal capacitor and manufacturing method thereof
WO2009051295A1 (en) * 2007-10-19 2009-04-23 Young Joo Oh Metal capacitor and manufacturing method thereof
US8138539B2 (en) 2007-11-29 2012-03-20 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US20090160019A1 (en) * 2007-12-20 2009-06-25 Mediatek Inc. Semiconductor capacitor
JP2010135515A (ja) * 2008-12-03 2010-06-17 Renesas Electronics Corp 半導体装置およびその製造方法
CN101534610B (zh) * 2008-03-12 2012-03-28 欣兴电子股份有限公司 埋入式电容元件电路板及其制造方法
US8101495B2 (en) 2008-03-13 2012-01-24 Infineon Technologies Ag MIM capacitors in semiconductor components
JP5103232B2 (ja) * 2008-03-18 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置
US8120086B2 (en) 2008-09-30 2012-02-21 Taiwan Semiconductor Manufacturing Co., Ltd Low leakage capacitors including portions in inter-layer dielectrics
US8716778B2 (en) * 2008-11-17 2014-05-06 Altera Corporation Metal-insulator-metal capacitors
JP2010135572A (ja) 2008-12-05 2010-06-17 Renesas Electronics Corp 半導体装置
KR101024652B1 (ko) * 2008-12-09 2011-03-25 매그나칩 반도체 유한회사 캐패시터 구조체
KR101595788B1 (ko) * 2009-03-18 2016-02-22 삼성전자주식회사 커패시터 구조물 및 그 제조 방법
US8482048B2 (en) * 2009-07-31 2013-07-09 Alpha & Omega Semiconductor, Inc. Metal oxide semiconductor field effect transistor integrating a capacitor
US8378450B2 (en) * 2009-08-27 2013-02-19 International Business Machines Corporation Interdigitated vertical parallel capacitor
JP5493166B2 (ja) * 2009-12-03 2014-05-14 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8971014B2 (en) * 2010-10-18 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Protection structure for metal-oxide-metal capacitor
US8497540B2 (en) * 2011-08-30 2013-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Capacitor and method of forming same
US9142607B2 (en) * 2012-02-23 2015-09-22 Freescale Semiconductor, Inc. Metal-insulator-metal capacitor
CN102683319B (zh) * 2012-05-28 2014-11-26 上海华力微电子有限公司 具有金属间空气隔离结构的mim电容器的版图结构
US9123719B2 (en) * 2012-06-26 2015-09-01 Broadcom Corporation Metal-oxide-metal capacitor
KR101936036B1 (ko) * 2013-02-08 2019-01-09 삼성전자 주식회사 커패시터 구조물
KR20150028929A (ko) * 2013-09-06 2015-03-17 매그나칩 반도체 유한회사 정전용량형 습도센서
TWI566390B (zh) * 2014-10-31 2017-01-11 力晶科技股份有限公司 能改善像素動態範圍的ｃｍｏｓ影像感應器
US9608112B2 (en) 2015-08-03 2017-03-28 Globalfoundries Inc. BULEX contacts in advanced FDSOI techniques
CN108447683B (zh) * 2018-03-29 2020-07-17 南京邮电大学 一种宽频带的ltcc叉指电容
US20190371725A1 (en) * 2018-06-01 2019-12-05 Qualcomm Incorporated On-chip differential metal-oxide-metal/metal-insulator-metal capacitor with improved circuit isolation
US11798772B2 (en) * 2018-11-12 2023-10-24 Peking University On-chip miniature X-ray source and manufacturing method therefor
DE112020006584B4 (de) * 2020-03-25 2024-01-04 Mitsubishi Electric Corporation Platine und elektronisches Gerät
JPWO2022176188A1 (zh) * 2021-02-22 2022-08-25
CN113451313B (zh) * 2021-06-28 2023-06-30 福建省晋华集成电路有限公司 半导体存储器件的设计方法、装置、存储介质及制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583359A (en) * 1995-03-03 1996-12-10 Northern Telecom Limited Capacitor structure for an integrated circuit
JPH1092689A (ja) * 1996-09-13 1998-04-10 Toshiba Corp キャパシタおよびその製造方法
WO2000049631A1 (en) * 1997-10-28 2000-08-24 Tdk Corporation Capacitor
JP4446525B2 (ja) * 1999-10-27 2010-04-07 株式会社ルネサステクノロジ 半導体装置
JP2001267503A (ja) * 2000-03-16 2001-09-28 Toshiba Corp キャパシタ及び集積回路
US6635916B2 (en) * 2000-08-31 2003-10-21 Texas Instruments Incorporated On-chip capacitor
US6690570B2 (en) * 2000-09-14 2004-02-10 California Institute Of Technology Highly efficient capacitor structures with enhanced matching properties
JP2002217258A (ja) * 2001-01-22 2002-08-02 Hitachi Ltd 半導体装置およびその測定方法、ならびに半導体装置の製造方法
JP4014432B2 (ja) * 2002-03-28 2007-11-28 ユーディナデバイス株式会社 インタディジタルキャパシタ及びその容量調整方法
JP2004072034A (ja) * 2002-08-09 2004-03-04 Toppan Printing Co Ltd コンデンサ及びそれを内蔵したインターポーザーもしくはプリント配線板
JP2004095754A (ja) * 2002-08-30 2004-03-25 Renesas Technology Corp キャパシタ
JP2004241762A (ja) 2003-01-16 2004-08-26 Nec Electronics Corp 半導体装置
CN100359692C (zh) * 2003-03-04 2008-01-02 台湾积体电路制造股份有限公司 多层叉合金属电容结构
JP3999189B2 (ja) * 2003-10-31 2007-10-31 松下電器産業株式会社 半導体装置及びその製造方法
JP4371799B2 (ja) * 2003-12-19 2009-11-25 株式会社リコー 容量素子
KR100725360B1 (ko) * 2004-12-27 2007-06-07 삼성전자주식회사 Ｍｉｍ 캐패시터 및 그 제조 방법
US7009832B1 (en) * 2005-03-14 2006-03-07 Broadcom Corporation High density metal-to-metal maze capacitor with optimized capacitance matching

Also Published As

Publication number Publication date
CN101308726A (zh) 2008-11-19
TWI296144B (en) 2008-04-21
US20060208339A1 (en) 2006-09-21
CN100466254C (zh) 2009-03-04
US20070013029A1 (en) 2007-01-18
CN101308726B (zh) 2010-12-08
US7209340B2 (en) 2007-04-24
CN1835235A (zh) 2006-09-20
JP2006261455A (ja) 2006-09-28
US7126809B2 (en) 2006-10-24

Similar Documents

Publication Publication Date Title
TW200634985A (en) Semiconductor device and MIM capacitor
TW200633614A (en) Method of fabricating printed circuit board having embedded multi-layer passive devices
TW200717551A (en) Embedded inductor and the application thereof
TW200644005A (en) Multilayer electronic component and manufacturing method thereof
TW200707486A (en) Laminated capacitor
TW200802443A (en) Electronic component
TW200519989A (en) Film capacitor, built-in high-density assembled substrate thereof, and method for making said film capacitor
TW200610017A (en) Wiring board, method of manufacturing the same, and semiconductor device
TW200737483A (en) Capacitor structure/multi-layer capacitor structure
TW200701264A (en) Inductor
TW200621076A (en) Organic electroluminescence device and method of production of same
WO2007106642A3 (en) Method for forming embedded capacitors on a printed circuit board, and resultant printed circuit board
TW200501182A (en) A capacitor structure
TW200620657A (en) Recessed semiconductor device
WO2015047321A8 (en) Previous layer self-aligned via and plug patterning for back end of line (beol) interconnects
TW200802777A (en) X-shaped semiconductor capacitor structure
WO2008057671A3 (en) Electronic device including a conductive structure extending through a buried insulating layer
TW200704582A (en) Semiconductor composite device and method of manufacturing the same
TW200833211A (en) Circuit board structure with capacitor embedded therein and method for fabricating the same
TW200620550A (en) Semiconductor device and method for manufacturing the same
TW200702189A (en) Method of manufacturing multi-layered substrate
TW200618683A (en) Circuit board structure with embeded adjustable passive components and method for fabricating the same
GB2487172A (en) Microelectronic package and method of manufacturing same
TWI268522B (en) Dielectric structure
WO2008155967A1 (ja) 部品内蔵基板及びその製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees