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TW200541193A - High-efficiency DC/DC converter with high voltage gain - Google Patents

High-efficiency DC/DC converter with high voltage gain Download PDF

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Publication number
TW200541193A
TW200541193A TW093116773A TW93116773A TW200541193A TW 200541193 A TW200541193 A TW 200541193A TW 093116773 A TW093116773 A TW 093116773A TW 93116773 A TW93116773 A TW 93116773A TW 200541193 A TW200541193 A TW 200541193A
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voltage
circuit
current
low
switch
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TW093116773A
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Chinese (zh)
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TWI238590B (en
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Rong-Jong Wai
Rou-Yung Duan
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Wei Zheng Zhong
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/56Power conversion systems, e.g. maximum power point trackers

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  • Dc-Dc Converters (AREA)

Abstract

This invention develops a high-efficiency DC/DC converter with high voltage gain to solve the voltage spike across the clamped switch as the switch is turned off. A conventional boost converter including a single inductor is the common usual. However, the main switch in this circuit has to possess the power capability of high voltage and large current, and it has the problem of reverse-recovery within the output diode. As a result, the conversion efficiency is degraded, and the voltage gain is limited. For the boost converter scheme with a transformer, the step-up range is also limited by the turn ratio, and the conversion efficiency is difficult to improve without handling the leakage energy efficiently. In the proposed converter topology, a high magnetizing current charges the primary winding of the coupled inductor and the clamped capacitor is discharged to the auxiliary capacitor when the switch is turned on. On the contrary, the magnetizing current flows continuously to boost the voltage in the secondary winding of the coupled inductor, and the voltages across the secondary winding of the coupled inductor, the clamped capacitor and the auxiliary capacitor are connected in series to charge the filter circuit. Thus, the related voltage gain is higher than conventional converter circuits. Moreover, this scheme has the voltage-clamped property, i.e., the switch is turned on under zero-current-switching (ZCS) and its sustainable voltage is comparatively lower than the output voltage, so that it can select low-voltage low-conduction-loss devices and there are no reverse-recovery currents within the diodes in this circuit. Consequently, this circuit strategy adopts lower-conduction-loss devices in the low-voltage side with large currents, and the high-voltage side is suppressed in a low current form. From the theoretical derivation and experimental results, the proposed converter topology has favorable voltage-clamped effect, superior voltage gain and conversion efficiency. The proposed high-efficiency converter in this invention can be used for transforming low-voltage sources to high-voltage applications, such as conventional batteries, fuel cells, photovoltaic and wind energy, to further increase the energy utility rate.

Description

200541193 玖、發明說明: 【發明所屬之技術領域】 許多電源應用場合,例如氣體放電式頭燈、不斷電系統 中反流器之高壓直流匯流排、寬頻行波管放大器等,均需 要高壓直流電源供應,一般以蓄電池作為電力來源;另一方 面糸淨此源發電系統,如太陽能、風能及燃料電池,通常 為,低電壓之直流電源,因此高昇壓比之高效率直流/直流換 /瓜為為必要之别端能源轉換機制。本發明之高效率高昇壓比 直流/直流換流器,可以將:⑴傳統池及潔淨能源發電 糸統,、轉換為高電壓直流電源供電系統,大幅提昇能源利用 率及增加供電穩定度;⑺將市電f源整流為錢電源後,利 用本創作可升壓至仟伏級直流電源系統,亦或是調節直流電 壓,提供後端電源電路❹並增進電源品質。本發明所涉及 之技術領域包含電力電子、直流/直流錢技術及能源科技之 乾嘴,雖然本發明所㈣之技術領域廣泛,但其主要在於利 用麵合電感架構搭配電壓箝制技術,改善習用高昇壓換流器 所使用之元件必須承受兩側f壓及電流之應力,致使其容: 無法充分運用及轉換效率不彰之缺失。 里 【先前技術】 一般傳統昇壓式換流器電路如圖2⑻所示,# 關之責任週期(Duty Cycle),以提高輸入電壓之位準 = 堡式換流器之功率半導體„於截止時,㈣跨 : ^壓值,因此必須選擇耐壓大於或等於輸出側電 +導體開關,偏若採用M0SFET元件,其特性含有較大導通 200541193 阻抗(土^),自然衍生較高之 換流哭中輪屮^ ^ ν通知失。此外,傳統昇壓式 :二而二極體存在逆向恢1 突波ΐ流建=體開關導通瞬間’輪出端二極體必須幾乎以 嚴重之切換損^偏電麼’此電流流經功率半導體開關,引起 單且成本低】,、^致於其,換效率不彰。但由於此架構簡 聿界卢、、乏;s用’於幵壓比不高及不苛求效率的情形下,為工 二)廣泛應用’如功率因數調整器(power Factor C_ct-, 優點可以白用歼塵木構即是利用變遷器,該電路最大 直流:二:兩、,壓側電路。一般最常使用刪的直流/ 低導、甬f 2反而疋降屡式換流器,其優點為在低屢側使用 並於高壓側開關截止時,不會因開_ 接傳遞至健側,導致低壓側電路之元件,因電墨 °然:而,激磁電流之平衡控制及漏感能量處理,都 H克服之問題。此外’變壓器應用於昇壓架構時亦存在 點’譬如最高電壓增料於㈣比例,輸出整流二極 少兩倍輸出電壓之應力,以致使緩震電路是不可或 對=昇壓電路而言,隔離的意義為何?倘若電路主動權 於低壓側,換言之,控制f路可以f控系統㈣,而掌控 曾開關係利用電壓箝制技術後,使用較低電壓額定之功率半 關’那麼還需要隔離嗎?於是各界研究發展非隔離型 架構,習用耦合電感型昇壓電路,如圖2(b)所示,它同 、有返馳式(Flyback)南昇壓比特性。由於耦合電感屬非隔 200541193 離型昇㈣構,-次側電路可以輔助㈣,昇觀例及輪出 功率均優於返馳式電路。然而圖2(b)電路於開關截止時,漏 感所產生之突波電壓,必須加裝緩震電路以消耗其能量,避 免開關過壓而損壞,因此其轉換效率不彰。 >因此許多專家學者提出高效率昇壓換流技術(如下列備 註所列論文),改善上述傳統昇壓式換流器缺點,大致 四類: 第一類型:柔性切換技術 參考文獻Π]利用耦合電感之漏感與開關寄生電容(一般 tS) (Parasitic Capacitance or Output Capacitance) 之諧振特性,於諧振電壓最低點時開關導通,解決二極體逆 向恢復電流之問題,因此切換損失大幅減少,而且是單開關 架構,輕載效率可達97%以上,本發明圖9⑷及圖u⑻的開 關電壓〜,波形亦有類似此柔性切換功能。參考文獻⑴諸多缺 點·(1)開關仍須承受高、低壓側之電壓及電流;(2)開關容量 利用率低,以TO-247開關包裝容量,但僅有2〇(^^輸出,顯 然該架構之高效率特性並無法於較高負載下表現;(3)電感電 流漣波與開關導損失較高;(4)僅提高5〇%之輸入電壓,昇壓 比例低,(5) ’交頻控制,將造成驅動電路複雜以及重載之柔性 切換效果有限。一般諧振電路易受負載及電感電容參數變化 影響,同時開關電流漣波大,將增加額外導通損失。參考文 獻[2]輸出功率達i.6kW轉換效率高於前述文獻,然‘此電 路需要加裝輔助開關’控制電路較為複雜。輸出彻V與輸入 300V之電壓差距不高,導通電流低,Q此柔性切換將是達成 200541193 高效率轉換之關鍵技術。一般而士,σ 向恢復電流的問題,高輸入電屋:升;=效處理二極體逆 媸播、六哭p弓明、t 升£比例很低的非隔離架 構換…開關導通的時間短’代表 壓差能量是靠開_提供的,相對的_ 開關導通時,開關寄生電容短路電流:===處理 體逆向恢復電流部分,開關M咖TA部分之:換損 灿]’其中/(.為切換頻率,v』開關電壓 :生電容’條若開關導通前,兩端電《低於爾時:切換損 二 =所佔比例大幅下降,因此以柔性切換特性= 電壓视圍刼作,對於提高轉換效率之效益有限。 第二類型:變壓器昇壓 =文獻[3]利用變壓器配合柔性切換技術,最 達97.以,但昇壓比例不到三倍,而且遠低於阻數比。開關 所承又之電壓與輸出電壓相同,因此變壓器並 ::Γ生充分發揮,以應用於低壓侧低導通損之功率= 第三類型:耦合電感架構 芩考文獻[4]已經成功處理漏感能量之 制之效果。文中以箝制電容吸收低壓惻漏== 模=有助於提高電壓增益。另一方面,在籍制 加飞連用下,開關所承受電壓低於輸出電壓,並為前述幾 木構中’昇壓比例最高,既使在額定功率輸出時,仍呈現出 10 200541193 不錯轉換效率’為高效率高昇壓比換流器跨出一大步。後續 發表之參考文獻[5]敘述參考文獻[4]架構在開關導通時,^ 壓側二極體需承受之逆向偏壓為輸出電塵二 為匝數比),必須搭配使用緩震電路消除漏感所造成之突波 電壓,此種情形在高輸出電壓與高匝數比架構更為明顯。參 考文獻[5]將前者輸出電容調整至二次側高壓迴路,有效降低 二極體逆向偏壓,但不可否認,緩震電路還是無法捨去。 第四類型:二次侧多組串聯昇壓 參考文獻[6]利用兩級或單級架構、柔性切換加上變壓器 昇壓,以獲得高電壓增益。其變壓器二次側整流後,將多組 繞組串聯電壓,得到3e2kV之高電壓輸出,主要為通訊衛星 用之電源,參考文獻[5]中亦有類似電路接法。由於運用柔性 切換特性,有效處理高壓側二極體逆向恢復電流的問題,因 此轉換效率非常高,輸入電壓為26V-44V,供應額定15〇冒負 載時,最低效率94·1〇/〇,就高昇壓比技術範疇而言,為一經 典之作。進一步分析,實際上3 2kv為二次側多繞組電壓串 接才能提升至此範圍,若以單繞組最高輸出電壓僅為75〇v。 主要架構使用到四個開關、三個電感及一個變壓器。輔助開 關實測最高電壓150V,實際選用耐壓250V-23A;主開關實測 最咼電壓120V,選用耐壓2〇〇ν·1〇〇Α。全部使用四個TO-247 開關,然而輸出功率僅有150W,未充分發揮元件之容量, 不過該架構用於通訊衛星,效率實為首要考量。 綜合觀察先前技術所列之參考文獻以及其他耦合電感架 構,其開關兩端之電壓波形,如參考文獻[。之^心15及參考 200541193 文獻[5]之Fig· 19之實測開關MOSFET電壓波形,截止瞬間皆 存在突波電壓,其電壓超過正常跨壓一半以上,必須提高使 用開關電壓規格,甚至高於輸出電壓。以MOSFET製造特性,200541193 发明 Description of the invention: [Technical field to which the invention belongs] Many power applications, such as gas-discharge headlamps, high-voltage DC busbars of inverters in uninterruptible power systems, and wideband traveling wave tube amplifiers, all require high-voltage DC Power supply generally uses batteries as the source of power; on the other hand, clean source power systems such as solar, wind and fuel cells are usually low-voltage DC power sources, so high-efficiency DC / DC converters with high boost ratios Guarana is another necessary energy conversion mechanism. The high efficiency and high boost ratio DC / DC converter of the present invention can convert: 将 traditional pools and clean energy power generation systems into high-voltage DC power supply systems, greatly improving energy utilization and increasing power supply stability; ⑺ After the mains f source is rectified into a money power supply, this creation can be used to boost the voltage to a volt-level DC power system, or adjust the DC voltage to provide a back-end power circuit and improve the quality of the power. The technical field covered by the present invention includes power electronics, DC / DC technology, and energy technology. Although the technical field covered by the present invention is wide, it is mainly based on the use of a surface-coupled inductor architecture and voltage clamping technology to improve the high-speed custom. The components used in the voltage converter must withstand the stress of the f voltage and the current on both sides, so that its capacity can not be fully used and the lack of conversion efficiency is lacking. [Previous technology] The general conventional boost converter circuit is shown in Figure 2⑻, # Duty Cycle to increase the input voltage level = Power semiconductor of the Bacon converter at the time of cut-off ㈣cross voltage: ^ voltage value, so you must choose a withstand voltage greater than or equal to the output side electric + conductor switch. If you use M0SFET elements, its characteristics include a large on-resistance 200541193 impedance (soil ^), naturally derived higher commutation cry The middle wheel 屮 ^ ν notification is lost. In addition, the traditional boost type: two and the diode has a reverse recovery 1 Surge current flow = the body switch is turned on at the moment 'the output diode of the wheel must be almost severely switched ^ What is the bias current? This current flows through the power semiconductor switch, causing a single and low cost.], ^ Because of this, the conversion efficiency is not good. However, due to the simple structure of the structure, the lack of power; In the case of high and not demanding efficiency, it is widely used in the second industry. For example, the power factor regulator (power factor C_ct-) has the advantage of using dust-free wood structures, that is, the use of transformers. The maximum DC of this circuit is two: two. , Voltage side circuit. Generally, the most commonly used deleted DC / The 甬 and 甬 f 2 instead reduce the repetitive converter. Its advantage is that when it is used on the low reciprocal side and the high-voltage side switch is turned off, it will not be transmitted to the healthy side due to the open connection, resulting in low-voltage side circuit components. Mo ° Ran: However, the balance control of the excitation current and the leakage inductance energy processing both overcome the problems. In addition, 'there is also a point when the transformer is used in a boost architecture', such as the maximum voltage is increased to the ratio, and the output rectification is extremely low. The stress of double the output voltage, so that the cushioning circuit is not possible. For the boost circuit, what is the meaning of isolation? If the circuit is actively controlled on the low voltage side, in other words, controlling the f circuit can control the system, and control the After using the voltage clamping technology to open the relationship, use the lower voltage rated power half-off. 'Do you still need to isolate it? So various circles have researched and developed non-isolated architectures and used coupled inductive boost circuits, as shown in Figure 2 (b). It has the same characteristics as the flyback south boost ratio. Because the coupling inductor is a non-isolated 200541193 lift-off structure, the secondary circuit can assist the booster. The lift-up example and the power output are better than the flyback.式 电路。 Type circuit. However, when the circuit in Figure 2 (b) turns off, the surge voltage generated by the leakage inductance must be equipped with a damping circuit to consume its energy and avoid damage caused by the overvoltage of the switch, so its conversion efficiency is not good. ≫ Therefore many Experts and scholars propose high-efficiency step-up converter technology (such as the paper listed in the following remarks) to improve the disadvantages of the traditional step-up converter mentioned above. There are roughly four categories: First type: Flexible switching technology reference Π] Use the leakage of coupled inductors Inductive and switching parasitic capacitance (general tS) (Parasitic Capacitance or Output Capacitance) resonance characteristics, the switch is turned on at the lowest point of the resonance voltage, to solve the problem of reverse recovery current of the diode, so the switching loss is greatly reduced, and it is a single switch architecture The light-load efficiency can reach more than 97%. The switching voltage of Figure 9⑷ and Figure u 本 of the present invention also has a flexible switching function similar to this. References ⑴ Many shortcomings · (1) The switch must still bear the voltage and current of the high and low voltage sides; (2) The switch capacity utilization rate is low, and the TO-247 switch is used to pack the capacity, but only 20 (^^ output, obviously The high efficiency characteristics of this architecture cannot be performed under higher loads; (3) inductor current ripple and switching losses are high; (4) only 50% increase in input voltage, low boost ratio, (5) ' Cross-frequency control will result in complicated driving circuit and limited flexible switching effect of heavy load. Generally resonant circuits are susceptible to changes in load and inductance-capacitance parameters. At the same time, large switching current ripples will increase additional conduction losses. Reference [2] Output The power conversion efficiency of i.6kW is higher than that of the previous literature, but the control circuit of this circuit needs to be equipped with an auxiliary switch. The voltage difference between the output V and the input 300V is not high, and the on-current is low. This flexible switching of Q will be achieved. 200541193 The key technology of high efficiency conversion. Generally speaking, the problem of σ recovery current, high input electricity house: liter; = effective treatment of diode reverse broadcast, Liu crying, and t liter. Isolation architecture change … The short on-time of the switch means that the energy of the differential pressure is provided by the open _. When the switch is on, the short-circuit current of the parasitic capacitance of the switch: === the reverse recovery current of the processing body, and the TA part of the switch: the loss Can] 'where / (. Is the switching frequency, v' Switching voltage: Capacitance ') If the switch is turned on before the two ends of the circuit are “lower than: Hours of switching: Switching loss 2 = The proportion is greatly reduced, so the flexible switching characteristics = The voltage depends on the operation, and the benefit for improving the conversion efficiency is limited. The second type: transformer boost = literature [3] using transformers with flexible switching technology, up to 97. But the boost ratio is less than three times, and far It is lower than the resistance ratio. The switch bears the same voltage as the output voltage, so the transformer :: Γ is fully utilized to apply the power of low conduction loss on the low side = third type: coupled inductor architecture. [4 ] The effect of the leakage inductance energy system has been successfully processed. In the article, the clamping capacitor is used to absorb the low-voltage leakage. == Modal = It helps to increase the voltage gain. On the other hand, under the system of plus flying, the voltage that the switch withstands is lower than the output voltage. , For the previous few wooden structures, 'the boost ratio is the highest, even at the rated power output, it still shows a good conversion efficiency of 10 200541193', which is a big step for high efficiency and high boost ratio converter. References published later [ 5] Describe the reference [4]. When the switch is on, the reverse bias voltage of the voltage-side diode is the output electric dust and the turns ratio. It must be used in conjunction with a shock-absorbing circuit to eliminate the leakage caused by the leakage inductance. This kind of situation is more obvious in high output voltage and high turns ratio architecture. Reference [5] adjusts the former output capacitor to the secondary side high voltage circuit, which effectively reduces the reverse bias voltage of the diode, but it is undeniable that The shock-absorbing circuit still can't be dropped. The fourth type: the secondary side multi-group series boost reference [6] uses a two-stage or single-stage architecture, flexible switching and transformer boost to obtain high voltage gain. After the secondary side of the transformer is rectified, multiple sets of windings are connected in series to obtain a high voltage output of 3e2kV, which is mainly a power supply for communication satellites. There is a similar circuit connection method in reference [5]. Because the flexible switching characteristics are used to effectively deal with the reverse recovery current of the high-voltage side diode, the conversion efficiency is very high. The input voltage is 26V-44V. When the rated load is 150, the minimum efficiency is 94 · 10 / 〇 In the category of high boost ratio technology, it is a classic. Further analysis, in fact, 3 2kv is the secondary side multi-winding voltage series connection can be increased to this range, if the maximum output voltage of a single winding is only 75 volts. The main architecture uses four switches, three inductors, and a transformer. The actual maximum voltage of the auxiliary switch is 150V, and the withstand voltage of 250V-23A is actually selected. The actual maximum voltage of the main switch is 120V, and the withstand voltage of 200V · 100A is selected. All four TO-247 switches are used, but the output power is only 150W, and the capacity of the components is not fully used. However, the architecture is used for communication satellites, and efficiency is the primary consideration. Comprehensively observe the references listed in the prior art and other coupled inductor structures, and the voltage waveforms across the switches, such as reference [. Zhixin 15 and reference 200541193 Fig. 19 [Fig. 19] of the measured switching MOSFET voltage waveform, there is a surge voltage at the moment of cut-off, and its voltage exceeds half of the normal cross-over voltage. The switching voltage specification must be increased, or even higher than the output. Voltage. With MOSFET manufacturing characteristics,

提高之比例將遠高於電壓上昇幅度,一般而言,MOSFET 的導通損與電流平方成正比,高壓MOSFET的重載導通損將 咼於IGBT功率半導體開關,因此部分高效率之電路只能於輕 載才能有所表現,此乃一般研究人員揚其長避其短之處。參 考文獻[1]及參考文獻[5]所呈現之開關突波電壓,乃因耦合 電感一次側截止時,線路及元件内部之電感流經電流,瞬間 電流變化所引起。解決方式必須在開關兩側並聯緩震電路, 流經電路必須越短越好,此路徑必須兼具低集膚效應及互感 值’如此才能有效使用更低電壓之低導通損開關,因此高效 率咼幵壓比裝置,電壓箝制技術遠比柔性切換機制更為重 要。 < 茲將先前高昇壓比換流器技術缺失作一總結:(1)諧振, =發揮之領域應於高輪人電壓架構;(2)開關容量未能充分驾 ,(、3)不能同時在高、低壓側所有元件達成電壓箝制;⑷未敲 ==器之激磁電流與感應電流的特性;(5)轉換㈣ 7 咸有架構可同時達成高效率及高升壓比$ 逐-克服達成言η i 旨係以上述所列缺失, ,^^ 率向昇壓比換流裝置之目的,在同樣匝_ =責任週1導通前提下,電壓增益比高於前述架構。= 在後績况明亦揭示本創作仍具高效率轉換之特點:、 200541193 備註:參考文獻 1. D. C. Lu, D. K. W. Cheng, and Y. S. Lee, UA single-switch continuous-conduction-mode boost converter with reduced reverse-recovery and switching losses/5 IEEE Transactions on Industrial vol· 50, pp· 767-776, 2003· 2. C. M. C. Duarte,and I. Barbi,“An improved family of ZVS-PWM active-clamping DC-to-DC converters/5 IEEE Transactions on Power Electronics, vol. 17? pp. l-7? 2002. 3. E. S. da Silva, L. dos Reis Barbosa,J. B. Vieira,Jr” L. C. de Freitas, and V. J. Farias, uAn improved boost PWM soft-single-switched converter with low voltage and current stresses/9 IEEE Transactions on Industrial Electronics, vol. 48? pp. 1174-1179, 2001. 4. Q. Zhao, and F. C· Lee,“High-efficiency,high step_up DC_DC converters/9 IEEE Transactions on Power Electronics, vol. 18? pp. 65-73, 2003. 5. K. C. Tseng,and T. J. Liang,“Novel high-efficiency step-up converter/9 IEE Proceedings Electric Power Applications, vol. 151, pp. 182-190, 2004. 6. I. Barbi, and R. Gules, "Isolated DC-DC converters with high-output voltage for TWTA telecommunication satellite applications/5 IEEE Transactions on Power Electronics, vol. 18? pp. 975-984, 2003. 以下將前述參考文獻之高效率昇壓換流技術彙整比較,以 更進一步凸顯本發明之「高效率高昇壓比直流/直流換流器」 技術突破之技術參考指標。 200541193The increase will be much higher than the voltage rise. Generally speaking, the MOSFET's conduction loss is proportional to the square of the current. The heavy-load conduction loss of the high-voltage MOSFET will be limited to the IGBT power semiconductor switch. Therefore, some high-efficiency circuits can only be light. The ability to load has some performance. This is the general researcher's strengths to avoid their weaknesses. The switching surge voltages presented in References [1] and [5] are caused by the current flowing through the inductors inside the line and components when the primary side of the coupled inductor is turned off, and the instantaneous current changes. The solution must be in parallel with the damping circuit on both sides of the switch. The flow-through circuit must be as short as possible. This path must have both a low skin effect and a mutual inductance value.咼 幵 Voltage ratio device, voltage clamping technology is far more important than flexible switching mechanism. < I will summarize the lack of previous high boost ratio converter technology: (1) resonance, = the field of play should be in the high-wheeler voltage architecture; (2) the switching capacity is not fully driven, (, 3) All components on the high and low voltage sides achieve voltage clamping; ⑷ not knocked = = characteristics of the exciting current and induced current of the device; (5) conversion ㈣ 7 The existing architecture can achieve high efficiency and high boost ratio at the same time. The purpose of η i is to reduce the voltage to the ratio of the step-up converter device with the above-listed losses. Under the premise that the same turn _ = duty cycle 1 is turned on, the voltage gain ratio is higher than the aforementioned structure. = The later performance also reveals that this creation still features high-efficiency conversion: 200541193 Note: References 1. DC Lu, DKW Cheng, and YS Lee, UA single-switch continuous-conduction-mode boost converter with reduced reverse -recovery and switching losses / 5 IEEE Transactions on Industrial vol · 50, pp · 767-776, 2003 · 2. CMC Duarte, and I. Barbi, “An improved family of ZVS-PWM active-clamping DC-to-DC converters / 5 IEEE Transactions on Power Electronics, vol. 17? Pp. L-7? 2002. 3. ES da Silva, L. dos Reis Barbosa, JB Vieira, Jr ”LC de Freitas, and VJ Farias, uAn improved boost PWM soft -single-switched converter with low voltage and current stresses / 9 IEEE Transactions on Industrial Electronics, vol. 48? pp. 1174-1179, 2001. 4. Q. Zhao, and F. C. Lee, “High-efficiency, high step_up DC_DC converters / 9 IEEE Transactions on Power Electronics, vol. 18? pp. 65-73, 2003. 5. KC Tseng, and TJ Liang, "Novel high-efficiency step-up converter / 9 IEE Proceedi ngs Electric Power Applications, vol. 151, pp. 182-190, 2004. 6. I. Barbi, and R. Gules, " Isolated DC-DC converters with high-output voltage for TWTA telecommunication satellite applications / 5 IEEE on Power Electronics, vol. 18? Pp. 975-984, 2003. In the following, the high-efficiency boost converter technology of the aforementioned reference is summarized and compared to further highlight the "high efficiency and high boost ratio DC / DC converter of the present invention. '' Technical reference indicators for technological breakthroughs. 200541193

參 考 文 獻 輸入 電壓 輸出 電壓 輸出 容量 最高轉 換效率 電壓 增益 及 倍數 開關使用 規格或 波形最高 跨壓 優缺點比較 [1] 100V 150V 200W 97.4% 1.5 500V/14A 優點:具柔性切換 缺點:昇壓比低及電 感容量大 [2] 300V 400V 1.6kW 98.3% 1.3 500V/20A 優點:具柔性切換 缺點:昇壓比太低及 箝制電壓高 [3] 80V 200V 400W 97.5% 2.5 400V/10A 優點:具柔性切換 缺點:昇壓比最多四 倍 [4] 48V 1 75V 380V lkW 92.3% (75V-lkW) ^ _\+nD Cli/ — 1-D 8.0 250V/14A 並聯4個 優點:架構簡單及使 用較低導通 損零件 缺點:二極體需加裝 緩震電路 [5] 12V 42V 35W 93% G —1 + W 30V 優點:二極體耐壓規 格較低 缺點:二極體仍需加 裝緩震電路 y 1-D 3.5 [6] 26V 1 44V 單組 最高 750V 150W 94.7% 28.8 200V- 100A*2 250V- 23A*2 優點:柔性切換高效 率高昇壓比 缺點·成本南架構複 雜 本 創 作 24V 1 40V 200V 800W 97% 400W ^ \ + D + nD Oy — v 1 - Z) 昇壓比8倍 75V-209A-TO-247 開關最高跨壓65V 【發明内容】 本發明所揭示「高效率高昇壓比直流/直流換流器」之方 塊圖,如圖1所示。直流輸入電路101之直流電壓‘,於一次 侧電路102之功率半導體開關2導通時,電流將能量儲存於耦 合電感之一次側繞組a,同時箝制電路103之箝制電容(^透 200541193 過功率半導體開關2導通提供之路徑,對辅助昇壓電路1〇4之 辅助電容〇3與辅助電感Z3充電。當功率半導體開關e截止瞬 間’一次側電路102電流離開功率半導體2開關,經由箱制電 珞1〇3之箝制二極體a流入該電路之箝制電容^,此時辅助電 容6開始放電,前述兩個電容之電流乃提供一次側繞組&漏 威能量之續流路徑,然此漏感電流亦強迫二次側電路1〇5之 高壓電容02放電,再經由濾波電路105之整流二極體%導通 所提供之路徑,流入濾波電容及直流輸出電路1〇7,此乃 完成直流低壓電源轉換成直流高壓電源之重要時序。於整個 =換週期末段,耦合電感之二次側繞組&,依據磁通不滅 之理,一次側激磁電流經由鐵心,將能量傳送至二次側繞組 $,其電流Z_,2將對高壓電容C2充電,以提供下一週期所需放 電能量。並於功率半導體開關2導通前夕,輔助電感&除以 極低比例電流對輔助電容q充電外,同時穿過一次側繞組& 之非極性點,將能量透過鐵心傳送至二次側電路ι〇5,此反 =之_人側繞組電流,_/」,將因該繞組漏感成分,於開關導通 宁幵/成令電流切換(Zer〇_Current Switching,zCS)。 日士本广月所揭示「高效率高昇壓比直流/直流換流器」電路 曰=序與工作模式,分別如圖3與圖4所示。以下將利用圖3及 羊述本創作之J1作原理,同時為使說明精簡易於瞭解, ,名词不至於几長,以下内容至對照功效部分,電路歸屬 (如···電路101 )省略之,直接對照說明所屬圖式即可 曰月瞭: ^式一:時間[,。-開關ρ導通一段時間 200541193 令時間於,=/。時,開關2導通已經一段期間,輕人+感ρ 一次側繞組A之電流/λ1,流經一次側繞組之漏感心及^磁電 感之部分,通過開關2流回至直流輸入電路之負極。由於2 合電感7;二次侧繞組ζ2之極性點感應為正電壓,二4 人彳則電路 之南壓^_極體Α呈現逆偏狀恶’所以開關0導通期間,輕人 電感7;為儲能狀態,未提供任何感應電流至二次侧電路。籍 制電容c,之能量,藉由開關2提供之電流路徑,以辅助昇$ 電路之輔助電感Z3對輔助電容C3充電,此乃提供箝制電 釋放能量之路徑,同時輔助電容q之電壓與箝制電路串 可以進一步減低開關2所需承受的電壓。 模式一 ·時間h -/2],開關ρ觸發訊號截止瞬間 開關2觸發訊號截止瞬間〇 = /ι),耦合電感一次側繞組&之 電流與輔助電感電^乃然以模式—的路徑對開^^兩端 之寄生電容充電。 模式三:時間卩广,3];箝制二極體〇及整流二極體%導通 先前模式-之箝制電容C|電壓為放電而下降,於模式 二時開關減止後而開始充電。模式三始於^,開關^電 壓〜高於箝制電容ς之電壓v ,此時 μ 、 电土 ν(ι此蚪,柑制二極體ZV丨丨員偏導 通,導引一次側繞組ζ之雷洁·泣石# 土 … 1电机,,丨/;,L至柑制電容C丨充電。同樣時 間〇 ,開關2兩端電壓 卜斗 奋 土%上升,依據克希荷夫電壓定律, 整流二極體乃0之逆偏電壓 土豕、、金择 w迷漸遞減,琅後順偏導通,因此 箝制電容C,之電壓Vn停丨卜μ & … 止上幵以柑制開關2之最高電壓,然 而箝制二極體Ζ)ι串聯箝制雷 ^ 0a a 市j東各C1之電路,必須短而緊密並聯 於開關2兩端,否則仍备古砂的 曰有線路雜散電感產生而導致開關兩 200541193 端之突波電壓。當箝制二極體a及整流二極體凡導通時,一 次側繞組4之電流l因電容電流平衡原理,均分兩個路徑之 電流’對箝制電容q充電以及迫使辅助電容^放電。由=受 限於一次側繞組a之漏感々電流續流,激磁電流,·〜仍未導引 至二次側繞組z2,因此辅助電感4與辅助電容^之總電流 “3 +L),循著二次側電路之高壓電容C2與整流二極體β。路徑, 對濾波電容C。充電。 ° ^ 模式四:時間[/厂,4];高壓二極體Α導通 畐一次側繞組Α之漏感々電流能量持續釋放,加上高壓電 容C2之電壓v(:2因放電而下降’二次侧繞組心在非極性點產生 之正電壓’將使得高壓二極體明偏導通,激磁電^透過 鐵心’傳送至二欠側繞組z2,纟電U始上昇。但由於一 -人側電…持續下%,電容C|、電流全部因此隨著減 模式五·時間整流二極體%截止 由於遽波電容。之輸出電壓F。上昇,而輔助電容c声高塵 :谷:之電壓vC3與Vc2因放電而下降,整流二極體囊而截 偏電壓與箝制二極體β相同,因此兩個二極體所需 =又電Μ低’可使用低導通電壓之蕭基二極體。後續電 轉而對高麼電容c #雷,Π η士 & 1 、 /2 6 2充電叫辅助電感4之電流L,源至箝 經過辅助電容q、-次側繞組认直流電源•徑, 透過约欠側繞組^之非極性點電流,將以變壓器方式, 、、至二次側繞組A ’對高塵電容C2充電。電流//3 200541193 經過直流電源G之部分,屬於環流成分,但由於輔助電感尤 之電流l遠小於開關2之電流,且直流電源匕為低壓,再加上 時間短暫,因此環流能量遠低於整體能量轉換,對轉換效率 影響有限。 ' 模式六:時間[,5-,。];開關2導通 由於流入一次側繞組A之非極性點電流3受限於一次側誇 組A之漏感4續流特性,開關2導通時,無法自輔助電容 徑汲取任何電流,形成導通時具零電流切換特性(zcs)。3待 流經一次側漏感A電流轉向成為直流電源「、供應後,二次側 繞組A之電流/Λ2逐漸減少,當高壓二極體化逆偏時,電流k降 為零,完成一切換週期(Switching Cyc]le),接下來工作模式 則回到模式一的情形。 、 [公式推導] 令耦合電感7;之一次侧繞組A與二次側繞組&之阻數比為 ,且耦合係數々定義為 , :功ίίΪ磁電感(又稱互感h為一次側繞組A之漏感 J +¥體開關2導通時’一次側激磁電感以等效電 im ⑺ 壓VS康表電示屋為平衡理論’當開議止時,激磁電“兩端電 V/ni"DkVs/(\-D) 上式 Z) >&,古u > (3) ’、、、貝任週期。然而箝制電容。之箝制電壓v。與一次側 200541193 ,組A之漏感電壓〜有關,計算該電壓時,必縣求得該電 流截止所需時間’如圖5所示’依據高壓電容q之充放電電流 :::平衡原理’以及該電流之初始值為激磁電流‘的—半,則 仗開關截止到漏感電流L降為零所佔的責任週期巧可歸納為 Di =4[Ar + (l-Z))7:s〇/[(^ + 4)rv] (4)References Input Voltage Output Voltage Output Capacity Maximum Conversion Efficiency Voltage Gain and Multiple Switch Use Specifications or Waveforms Highest Cross-Voltage Advantages and Disadvantages [1] 100V 150V 200W 97.4% 1.5 500V / 14A Advantages: Flexible switching Disadvantages: Low boost ratio and Large inductance capacity [2] 300V 400V 1.6kW 98.3% 1.3 500V / 20A Advantages: Flexible switching Disadvantages: Too low boost ratio and high clamping voltage [3] 80V 200V 400W 97.5% 2.5 400V / 10A Advantages: Disadvantage of flexible switching : Up to four times the step-up ratio [4] 48V 1 75V 380V lkW 92.3% (75V-lkW) ^ _ \ + nD Cli / — 1-D 8.0 250V / 14A Parallel 4 advantages: simple structure and low conduction loss Disadvantages of the parts: Diodes need to be equipped with damping circuits [5] 12V 42V 35W 93% G — 1 + W 30V Advantages: Diodes with lower voltage specifications Disadvantages: Diodes still need to be equipped with damping circuits y 1 -D 3.5 [6] 26V 1 44V single group up to 750V 150W 94.7% 28.8 200V- 100A * 2 250V- 23A * 2 Advantages: Flexible switching High efficiency High boost ratio Disadvantages Costs Complex South architecture Original creation 24V 1 40V 200V 800W 97 % 400W ^ \ + D + nD Oy — v 1-Z) Step-up ratio 8 times 75V-209A-TO-247 Switch maximum voltage 65V [Abstract] The block diagram of the "high efficiency and high step-up ratio DC / DC converter" disclosed in the present invention is shown in Figure 1. The DC voltage of the DC input circuit 101 is that when the power semiconductor switch 2 of the primary circuit 102 is turned on, the current stores energy in the primary winding a of the coupled inductor, and at the same time clamps the clamping capacitance of the circuit 103 (^ through 200541193 overpower semiconductor switch). The path provided by 2 is conductive, and charges the auxiliary capacitor 03 and the auxiliary inductor Z3 of the auxiliary booster circuit 104. When the power semiconductor switch e is turned off, the current of the primary circuit 102 leaves the power semiconductor 2 switch and passes through the box circuit. The clamped diode a of 103 flows into the clamped capacitor of the circuit ^, at this time, the auxiliary capacitor 6 starts to discharge, and the current of the two capacitors provides a freewheeling path of the primary winding & leaky energy, but this leakage inductance The current also forces the high-voltage capacitor 02 of the secondary circuit 105 to discharge, and then passes through the path provided by the rectifier diode% of the filter circuit 105 to flow into the filter capacitor and the DC output circuit 107, which completes the DC low-voltage power supply. The important sequence for converting into DC high voltage power supply. At the end of the entire switching period, the secondary winding of the coupled inductor & The exciting current transmits energy to the secondary winding $ through the core, and its current Z_, 2 will charge the high-voltage capacitor C2 to provide the required discharge energy for the next cycle. And before the power semiconductor switch 2 is turned on, the auxiliary inductor & In addition to charging the auxiliary capacitor q with a very low proportion of current, at the same time passing through the non-polar point of the primary winding & to transmit energy through the core to the secondary circuit ι05, which is the opposite of _ person-side winding current, _ / ", Due to the leakage inductance component of the winding, the switch is switched on / off and the current is switched (Zer0_Current Switching (zCS). "Circuit" sequence and working mode are shown in Figure 3 and Figure 4, respectively. The following will use Figure 3 and the principle of J1 in this book to make the description simple and easy to understand. , The following content to the control function section, the circuit attribution (such as the circuit 101) is omitted, and the corresponding drawings can be directly compared to the description of the month: ^ formula 1: time [,.-Switch ρ on for a period of time 200541193 order time When, = /., Open Off 2 has been conducting for a period of time, and the current / λ1 of the primary winding A of the light side + inductor ρ flows through the leakage inductance and magnetic inductance of the primary winding and flows back to the negative pole of the DC input circuit through switch 2. Since 2 Inductor 7; the polarity point of the secondary winding ζ2 induces a positive voltage, and the 4th person is the south voltage of the circuit ^ _ pole body A shows reverse deflection, so the inductor 7 is light during the on time of switch 0; In the power state, no induced current is provided to the secondary circuit. The energy of the capacitor c, uses the current path provided by switch 2 to charge the auxiliary capacitor C3 with the auxiliary inductor Z3 of the auxiliary circuit, which provides clamping. The path of electrical energy release, at the same time the voltage of the auxiliary capacitor q and the clamping circuit string can further reduce the voltage that the switch 2 needs to withstand. Mode 1 · time h-/ 2], switch ρ triggers the signal cut-off moment Switch 2 triggers the signal cut-off moment 〇 = / ι), the current of the coupled inductor primary winding & ^^ The parasitic capacitance at both ends is charged. Mode 3: Time is wide, 3]; clamping diode 0 and rectifier diode% are on. In the previous mode, the clamping capacitor C | voltage drops for discharge, and charging starts after the switch is stopped in mode 2. The third mode starts with ^, the voltage of the switch ^ is higher than the voltage v of the clamping capacitor ς, and at this time, μ, the electric field ν (ι 蚪, the orange diode ZV, the member is turned on, and the primary winding ζ is guided.雷 洁 · 哭石 # Soil ... 1 motor, 丨 / ;, L to orange capacitor C 丨 Charge. At the same time 〇, the voltage at both ends of switch 2 rises. According to Kirchhoff ’s voltage law, the rectifier diode The reverse bias voltage, 0, and 择, which are zero, gradually decrease, and the reverse direction is turned on. Therefore, the voltage Vn of the capacitor C is clamped, and the maximum voltage of the switch 2 is limited. However, clamping diodes in series, and clamping lightning in series ^ 0a a The circuits of each C1 in the east of the city must be short and tightly connected in parallel to the two ends of switch 2, otherwise the line stray inductance is still generated and the switch two 200541193 Surge voltage at the terminal. When the clamping diode a and the rectifying diode are turned on, the current l of the primary winding 4 is divided into two paths of the current ′ to charge the clamping capacitor q and force the auxiliary capacitor ^ to discharge due to the principle of the capacitance current balance. Due to the leakage current limited by the primary winding a, the current continues to flow, and the exciting current has not been led to the secondary winding z2, so the total current of the auxiliary inductor 4 and the auxiliary capacitor ^ 3 + L), Follow the path of the high-voltage capacitor C2 of the secondary circuit and the rectifying diode β. Charge the filter capacitor C. ° ^ Mode 4: Time [/ factory, 4]; the high-voltage diode A turns on the primary winding A The leakage inductance and current energy are continuously released, and the voltage v (: 2 of the high-voltage capacitor C2 decreases due to discharge. 'The positive voltage generated by the secondary winding core at a non-polar point' will cause the high-voltage diode to be turned on and excited. The electric power ^ is transmitted to the two under-side windings z2 through the iron core, and the electric power U starts to rise. However, because the electric power on the human side continues to decrease, the capacitance C | The cutoff is due to the wave capacitor. The output voltage F. rises, and the auxiliary capacitor c sounds high. Dust: Valley: The voltages vC3 and Vc2 decrease due to discharge. The rectified diode capsule and the intercept voltage are the same as the clamped diode β, so Required for two diodes = low voltage, low voltage diodes can be used In the subsequent electricity, the high-capacitance capacitor c # 雷 , Π η 士 & 1, / 2 6 2 charges the current L called the auxiliary inductor 4, and the source to the clamp passes through the auxiliary capacitor q and the secondary winding to identify the DC power supply and path. The non-polar point current of the underside winding ^ will be charged in a transformer manner to the high-side capacitor C2 by the secondary winding A '. Current // 3 200541193 The part passing through the DC power supply G is a circulating component, but because The auxiliary inductor, especially the current l, is much smaller than the current of switch 2, and the DC power supply is low voltage. In addition, the time is short, so the circulating energy is much lower than the overall energy conversion, which has a limited impact on the conversion efficiency. 'Mode 6: Time [, 5 -,.]; Switch 2 is turned on. Because the non-polar point current 3 flowing into the primary winding A is limited by the leakage inductance 4 of the primary side A, the freewheeling characteristic. When the switch 2 is turned on, it cannot draw any current from the auxiliary capacitor diameter. It has zero current switching characteristics (zcs) when it is turned on. 3 When the leakage current A flows through the primary side, it turns into a DC power supply. After the supply, the current / Λ2 of the secondary winding A gradually decreases. When biased, the current k drops to Zero, complete a switching cycle (Switching Cyc) le, and then the working mode returns to the case of mode 1. [Formula derivation] Let the coupling inductance 7; the resistance of the primary winding A and the secondary winding & The ratio is, and the coupling coefficient 々 is defined as:: the magnetic inductance (also known as mutual inductance h is the leakage inductance of the primary winding A J + ¥ when the body switch 2 is turned on), the primary excitation inductance is equivalent to the voltage im ⑺ The meter shows that the house is a theory of equilibrium. 'When the discussion is over, the excitation electric voltage V / ni " DkVs / (\-D) above formula Z) > &, ancient u > (3)' ,, Behring cycle. However clamp the capacitor. Clamping voltage v. It is related to the leakage inductance voltage of the primary side 200541193, group A. When calculating this voltage, the time required for the current to cut off must be calculated. As shown in Figure 5, the charge and discharge current based on the high-voltage capacitor q ::: balance principle. And the initial value of the current is-half of the exciting current, then the duty cycle occupied by the switch until the leakage inductance L drops to zero can be summarized as Di = 4 [Ar + (lZ)) 7: s〇 / [(^ + 4) rv] (4)

::咖關切換週期,々為開關截止到漏感電流。降為零所 需時間、為高壓電容C2定電流充電之時間,為高壓電容^ 從零電流至定電流充電之轉態時間,、為開關ρ觸發導通時 間。由於&遠小於(丨,,因此方程式(4)可以簡化如下::: Kaguan switching cycle, 々 is the switch cut-off to the leakage inductance current. The time required to decrease to zero, the time for charging the high-voltage capacitor C2 at a constant current, the time for the high-voltage capacitor ^ to change from zero current to the constant current, and the time to trigger the switch ρ to turn on. Since & is much smaller than (丨 ,, equation (4) can be simplified as follows:

Dl =^/7^ =4(l-D)/(« + 4) (5) 因此依據電壓平衡公式可得到一次側繞組a之漏感4於時 内之電壓為 vIk^^llMzRv 4(1 - 2)) s (6) 將正個次側繞組A之漏感A與激磁電感4所得到之電壓公 式代入,可以得到箝制電容口之電壓為Dl = ^ / 7 ^ = 4 (lD) / («+ 4) (5) Therefore, the leakage inductance 4 of the primary winding a can be obtained according to the voltage balance formula. )) s (6) Substituting the voltage formula obtained by the leakage inductance A and the exciting inductance 4 of the positive secondary winding A, the voltage of the clamping capacitor port can be obtained as

vn=vas. =Fv+vu+V/m =τ^[1+τ(1, ⑺ ,據方私式(7)可得到開關ρ所需承受電壓與其他參數之 係。 重新回到開關2導通期間,辅助電容q透過輔助電感心, ,來自箝制電容。1之能量,形成-個降壓系統, 降至輔助電壓h,其關係式為 VC3=^Vri ⑻ 19 200541193 因此漏感比例越高,箱告丨丨雷 ^ 電路與輸出電路之電壓,=Vil越尚’相對地提高輔助昇屢 開關承受電壓v可=^以回授電路將調降#任週期… 麼比與電壓所以本創作可以減少漏感對昇 电土柑制之衫響。當開關^截止時,耦合電感『之二 -人側組12在非極性點處的電壓為正,其㈣ … VL2 = vC2 ^nvIm = DknVs /(1 - 〇) (9) 二:^:广及〜三者’對濾波電容^與負載&釋放能量, 輸出直流電壓匕為 (10) (11) = vn+vC3+v/2=i±^±^ 因此,換流器電壓增益可表示為 G,=^L = +:^0^)(1 + D)vn = vas. = Fv + vu + V / m = τ ^ [1 + τ (1, ⑺, according to the private formula (7), the relationship between the voltage required to switch ρ and other parameters can be obtained. Return to switch 2 During the conduction period, the auxiliary capacitor q passes through the auxiliary inductor core, and comes from the clamping capacitor. The energy of 1 forms a step-down system, which decreases to the auxiliary voltage h. The relationship is VC3 = ^ Vri ⑻ 19 200541193 Therefore, the higher the leakage inductance ratio Box report 丨 Lei ^ The voltage of the circuit and the output circuit, = Vil is still higher, relatively increase the auxiliary switch to withstand the voltage v can be = ^ to feedback the circuit will adjust down # any cycle ... So this creation It can reduce the leakage inductance to the electric earth shirt. When the switch ^ is off, the voltage at the non-polar point of the coupling inductor 12 is positive, and its ㈣… VL2 = vC2 ^ nvIm = DknVs / (1-〇) (9) Two: ^: wide and ~ three 'pair filter capacitor ^ and load & release energy, the output DC voltage is (10) (11) = vn + vC3 + v / 2 = i ± ^ ± ^ Therefore, the converter voltage gain can be expressed as G, = ^ L = +: ^ 0 ^) (1 + D)

Vs l — D T^D~~~ 將柄合係數定義為灸=098代入方程式⑴卜區數比”分別 為3一、5及7時,責任週期續換流器電麼增益〜曲線,如圖_ 所不之」符唬線,而實線部分為習用耦合電感架構之電 廢增益,兩者隨著責任週期D增加,其差距逐漸增大,此乃 本創作輔助昇壓電路之昇壓比重逐漸上升,為高於習用昇壓 比之主要原因。再將上圖數據擇-固Μ數比《=5,搞合係 數遣0.9提高為〇·95、請及!,縿製責任週期績換流器電 壓增益6曲線’如圖6(b)所示。依據兩圖分㈣合係數靖於 電壓增益%之影響約在百分之三以内,因此可以將輕合係數 遺定為卜俾利於分析換流器特性。令轉合係數灸等於】時, 方程式(11)第二項為零,換流器電壓增益可以簡化成 q = K) = ^ + D + Dn y 一 vs—~T^F~ (12) 20 200541193 將方程式(12)代入方程式(7)開關承受最高電壓與輸出電厚 之關係為 vds = ’0 + D + Dn) ( 1 3 )Vs l — DT ^ D ~~~ Define the handle coupling coefficient as moxibustion = 098 and substitute it into the equation. The ratio of the number of “bubble area” is 3 ~ 1, 5 and 7, respectively, the gain of the converter cycle of the duty cycle ~ _ "Nothing" is a bluff line, and the solid line is the electrical waste gain of the conventional coupled inductor architecture. As the responsibility period D increases, the gap gradually increases. This is the boost of the auxiliary boost circuit of this creation. The proportion has gradually increased, which is the main reason for higher than the conventional boost ratio. Then increase the data selection-fixed M ratio in the above figure to "= 5, and increase the coefficient 0.9 to 0.95, please! The curve 6 of the voltage gain of the duty cycle converter is shown in Fig. 6 (b). According to the two graphs, the coupling coefficient is affected by the voltage gain% within about 3%. Therefore, the light coupling coefficient can be left as a value for analysis of the converter characteristics. When the turning coefficient moxibustion is equal to], the second term of equation (11) is zero, and the converter voltage gain can be simplified as q = K) = ^ + D + Dn y a vs— ~ T ^ F ~ (12) 20 200541193 Substituting equation (12) into equation (7) The relationship between the highest voltage the switch can bear and the output thickness is vds = '0 + D + Dn) (1 3)

另外從方程式(12)可以得到責任週期d為 D- ~XIn addition, from the equation (12), the duty cycle d is D- ~ X

Gy ^r\ Λ-η (14) 本發明係針對國内外文獻及習用電路改善先前技術之原 理及對照功效如下: ' 1·箝制電路可以吸收線路電感能量,使得佈線容易,有利產 業利用性。目前文獻中所使用之緩震電路(Snubber)為常用 電壓箝制技術之一,大致分成被動式(Passive)(由電容、 ,阻及二極體組成)、主動式(Active)(附加輔助開關、電 容及二極體)及再生被動式(Passive Regenerative)(電容及 =極體)三種’主要吸收影響電壓箝制之電感以及二極體 疋向恢復電流之能量。被動式緩震電路之電容能量全 :::肖耗’因此效率最差。主動式緩震電路需額外增加開 關及控制電路,同時内部環流亦是另―需要克服 本創作之電壓箝制技術採用再生被動、 吸收影響電壓箝制夕处旦电崎微心,先 所路雜送到輸出端, 所而電路讀取少’僅增加些許_切換損失 另一個昇麗辅助電路,其效率最高。 成 瞬間電流高變化率是切 突波電壓,由於功率u —般常引起 率首、、古雷、入 與電流之乘積’所以低壓其劢 羊直机電源之輸出電流特 低“功 在即會造成突波電屢。雜、^」;、要些终雜散電感存 雜放電感主要來自於配線不當之互 200541193 感、導線内之電感及元件内部等效電感。突波電壓將直接 反應在開關兩側而燒毀,為保護開關,於最近兩端並聯高 容量電容即可獲得到電壓箝制效果,因此既使線路電感再 大,亦不會影響箝制效果。一般而言,欲達成高電流與低 互感之配線,將是一個實務上具挑戰課題,然而本創作電 路可有效降低線路互感之影響。 2. 箝制電路之箝制電容所吸收能量可以再運用於昇壓,無環 流問題,進一步達成電壓箝制目的。本創作不單將箝制電 路之能量送出輸出端,而且過程中串入電壓箝制之一環,· 進一步減低開關所需承受之電壓。 3. 轉換效率高。本創作在非隔離架構下,嚴謹區分低壓大電 流及高壓低電流特性。是故,元件之額定分別可選用較低 之耐壓與低導通電壓規格,以達成低成本、高轉換效率之 換流器裝置。 【實施方式】 茲說明本創作所有實施例通用規格如后。主要元件-功率 半導體開關2選用MOSFET,編號為IRFP2907,導通電阻 、_=4·5^ω,耐壓75V以及額定電流209A,包裝型式TO-220。 設定額定輸出電壓200V,開關最高箝制電壓為60V。為保留 足夠責任週期D,之放電比例,以及產生較小開關電流之有效 值,所以開關責任週期β界定約為0.5,可以得到較高之轉換 效率。最後亦考量實施例電源可為24V蓄電池,昇壓比則為 8.33。將上述數據代入方程式(14),計算匝數比η為5.33,取 22 200541193 其整數定為π =5。由於開關之箝制電壓與輪^ ^ 比,因此必須考慮輸入最高電壓之條件,卷㈤入%壓大致成正 其無載發電輸出電壓約為40V,從方程式用燃料電池時, 以求出,輸入電壓40V之開關責任週期:為〇2)3及方程式(13)可 壓”„,.約為63V,距離耐壓規格75V約有^%.36 ’開關兩端電 度。若以蓄電池電源計算,從24V昇壓至2°〇=^上^電壓餘裕 為0.51,開關兩端電壓,約為50V,尚有3〇% ,責任週期ΰ 度可以運用。將上述設計觀點’分析繪製責餘裕 壓G關係如圖7(a)所示,並將開關電壓v斑 ’〃輸入電 土 W丹鞠入電壓p關各 示如圖7(b)所示,如此一來應可更清楚本創作之每作關係表 換流器之切換頻率訂g100kHz,為—般業界=古,據。 頻率’其餘詳細之規格說明如下 員切換Gy ^ r \ Λ-η (14) The present invention aims to improve the principle and control efficiency of the prior art based on domestic and foreign literature and custom circuits as follows: '1. The clamp circuit can absorb the inductance energy of the line, make wiring easy, and benefit industrial availability. The snubber circuit currently used in the literature is one of the commonly used voltage clamping techniques, and is roughly divided into passive (composed of capacitors, resistors, and diodes), and active (additional auxiliary switches, capacitors) And diode) and regenerative passive (capacitive and polar) three kinds of 'mainly absorb the energy that affects the voltage clamping inductance and the diode's normal recovery current. The capacitive energy of a passive damping circuit is full ::: xiao consumption ’and therefore has the worst efficiency. The active damping circuit requires additional switching and control circuits, and the internal circulation is also another-it is necessary to overcome the voltage clamping technology of this creation by adopting regenerative passive and absorbing the impact of voltage clamping. The output end, so the circuit reads less' only adds a little _ switching loss to another Shengli auxiliary circuit, which has the highest efficiency. The instantaneous high current change rate is the cut surge voltage. Because the power u is usually caused by the product of the lead, the ancient thunder, the input and the current, so the output current of the low-voltage mutton direct power supply is extremely low. Surges are frequent. Miscellaneous, ^ ";, some final stray inductance, stray discharge sensation mainly comes from improper wiring between each other, 200541193 inductance, the inductance in the wire and the equivalent inductance inside the component. The surge voltage will be directly reflected on both sides of the switch and burned. In order to protect the switch, the voltage clamping effect can be obtained by connecting high-capacitance capacitors in parallel at the nearest two ends, so even the line inductance will not affect the clamping effect. Generally speaking, it is a practically challenging subject to achieve high current and low mutual inductance wiring. However, this creative circuit can effectively reduce the influence of line mutual inductance. 2. The energy absorbed by the clamping capacitor of the clamping circuit can be reused for boosting, there is no circulating current problem, and the purpose of voltage clamping is further achieved. This creation not only sends the energy of the clamping circuit out of the output, but also loops into the voltage clamping in the process, which further reduces the voltage required by the switch. 3. High conversion efficiency. In this non-isolated architecture, a strict distinction is made between low-voltage high-current and high-voltage low-current characteristics. Therefore, the component ratings can be selected with lower withstand voltage and low on-voltage specifications to achieve low-cost, high-conversion converter devices. [Embodiment] The general specifications of all the embodiments of the present invention are described below. Main components-Power Semiconductor switch 2 uses MOSFET, numbered as IRFP2907, on-resistance, _ = 4 · 5 ^ ω, withstand voltage 75V and rated current 209A, package type TO-220. Set the rated output voltage to 200V and the maximum clamping voltage of the switch to 60V. In order to keep a sufficient duty cycle D, the discharge ratio, and the effective value of generating a smaller switching current, so the switching duty cycle β is defined to be about 0.5, and a higher conversion efficiency can be obtained. Finally, it is considered that the power supply of the embodiment can be a 24V battery, and the boost ratio is 8.33. Substituting the above data into equation (14), calculate the turns ratio η to 5.33, take 22 200541193, and the integer is set to π = 5. Due to the ratio of the clamping voltage of the switch to the wheel ^ ^, the conditions of the highest input voltage must be considered. The% voltage involved is approximately positive. The no-load power generation output voltage is about 40V. When using the fuel cell for the equation, to obtain the input voltage. 40V switch duty cycle: 〇 2) 3 and equation (13) can be pressed "",. Is about 63V, about ^% from the voltage withstand voltage of 75V. 36 'Electricity at both ends of the switch. If calculated from battery power, the voltage margin from 24V to 2 ° 〇 = ^ 上 ^ voltage margin is 0.51, and the voltage across the switch is about 50V, which is still 30%. The duty cycle can be used. The above-mentioned design point of view is analyzed and plotted, and the relationship between the residual voltage and voltage G is shown in FIG. 7 (a), and the switching voltage v spot is input to the electric soil W and the input voltage p is shown in FIG. 7 (b). In this way, it should be clearer that the switching frequency of the converter for each creation of this creation is set to g100kHz, which is-general industry = ancient, according to data. Frequency ’remaining detailed specifications are as follows

v() : 200VDCv (): 200VDC

Tr . A =ll.6/^/;z2 =290/^/;^ :^v2 =3:i5;^: = 〇.98;core: EE-55 L3 : 25μΗ Q · IRFP2907?75V/209A?i?/AV(ON) =4.5mn? TO-247Tr. A = ll.6 / ^ /; z2 = 290 / ^ /; ^: ^ v2 = 3: i5; ^: = 〇.98; core: EE-55 L3: 25μΗ Q · IRFP2907? 75V / 209A? i? / AV (ON) = 4.5mn? TO-247

cm : 3300//F/50F*10 C, : 10//F/100F c2 : 20uF/250Vcm: 3300 // F / 50F * 10 C ,: 10 // F / 100F c2: 20uF / 250V

C3 : ΙΟμΡ/ΙΟΟν C() : 47wF/250FC3: ΙΟμΡ / ΙΟΟν C (): 47wF / 250F

dx,d〇: STPS20H100CT, 100V/2*10A (schottky)9TO-220ABdx, d〇: STPS20H100CT, 100V / 2 * 10A (schottky) 9TO-220AB

A: SFA1606G,400V/16A,TO-220AB 為使進一步暸解本創作之内容,以下實施例之實驗波 23 200541193 形,元件之電壓、電流之代號,敬請參閱圖4所揭示電路。 為驗證本發明所揭示「高效率高昇壓比直流/直流換流器」, 具有電壓變動箝制功能與高容量高轉換效率之效能,圖8所 示為應用於燃料電池昇壓至200V,各元件電壓及電流波形。 本實施例直流輸入電路101之直流電源,採美國Ballard公 司所生產之燃料電池,輸出電壓範圍約在38v(無載 載)。本實施例之測試條件為200V-700W之輸出規格,燃料電 池在該負載條件下,所提供之電壓約為3〇v。觀察圖8(a)_(h), MOSFET兩端電壓、箝制在6〇v,一次侧電路繞組&之電流_ L最高約為60A,對η·6辦的電感值而言,鐵心所需之容量並 不大。開關導通責任週期β為〇·45,仍有相當寬裕比例調整, 以對應輸入電壓變動、負載效應及提高輸出電壓。高壓側繞 組之電流遠小於低壓側電流,表示本創作已完全達成高、低 壓側的電壓及電流分野之目的。檢視低壓蕭基二極體⑺及%) 之電壓波形,於未加裝緩震電路下,二極體兩端不存在突波 電壓,而且低於100V,所以上述兩個二極體部分已達成電壓 箝制效果。圖8(i)所示為本創作200V,70W至780W瞬間加載⑩ 及卸載之輸出電壓及電流響應,依照波形顯示,電壓漣波低 於2%以下,又因激磁電感小,能量調節快速,所以負載劇烈 變動下,電壓變動率非常低。 燃料電池發電系統另一實施例如圖9所揭示,測試條件 為負載從70W逐步提高至710W,測量開關2之電壓及電流波 形。當輸出功率增加時,燃料電池電壓下降,需要調高責任 週期’以維持固定輸出電壓,此時開關2兩端電壓〜仍箝制 24 200541193 在60V左右。 口口圖10為本發明所揭示「高效率高昇ϋ比直流/直流換流 器i實施例之一,應用於燃料電池昇壓至2〇〇v之轉換效率。 本實施例為驗證理論之可行性,效率之計算基準並不包含驅 動信號電路所消耗之功率。本創作輸出功率操作於2講以 :時’,有參考文獻Π]所軸合電感厂之漏感A與開關2之 ^生電容c』振現象,如圖9⑷顯示之〜波形,開關Q導通 時:電壓Viw低於箝制電壓。另外於低壓操作,開關切換損失 及導通損失比例很小,因此本裝置在4〇w功率輸出時,效率籲 已超過92.5% ’最高效率超過97%,此部分亦可以用一般常 用板擬電路軟體即可證明。當輸出功率越高時,燃料電池輸 出電壓亦隨之降低。 ^圖1 1為本發明所揭示「高效率高昇壓比直流/直流換流 為」貫施例之一,應用於24V蓄電池昇壓至200V,負載範圍 為70W至800W,開關之電壓及電流波形。由波形觀疚 關之電壓箝制效果,接近理論之分析。圖12為本操;;條件; 一轉換放率圖,在此測試條件下,最高效率超過Μ」%,整鲁 體效率略低於圖1〇,其原因為本實施例昇壓比超過以吾,但 其轉換效率仍超過大部分先前技術所列之參考文獻。 雖d本發明已前述較佳實施例揭示,然其並非用以限定 =發:’任何熟習此技藝者,再不脫離本發明之精神和範圍 ,當可作各種之變動與修改,因此本發明之保護範 後附之申請專利範圍所界定者為準。 田 25 200541193 【圖式簡單說明】 圖1表示本發明所揭示「高效率高昇壓比直流/直流換流器」 方塊圖。 ㈤表不白用之幵壓式換流器:⑷傳統昇壓式換流器;⑻ 。具耦合電感之昇壓式換流器。 圖表不本發明所揭示「高效率高昇壓比直流/直流換流 器」,電路時序。A: SFA1606G, 400V / 16A, TO-220AB In order to further understand the content of this creation, the experimental wave of the following example 23 200541193 shape, the voltage and current code of the component, please refer to the circuit disclosed in Figure 4. In order to verify the "high efficiency and high boost ratio DC / DC converter" disclosed in the present invention, it has the function of voltage fluctuation clamping function and high capacity and high conversion efficiency. Figure 8 shows the components used in fuel cell boosting to 200V. Voltage and current waveforms. The DC power source of the DC input circuit 101 in this embodiment is a fuel cell produced by Ballard Corporation in the United States, and the output voltage range is about 38v (no load). The test conditions of this embodiment are 200V-700W output specifications. Under the load conditions, the fuel cell provides a voltage of about 30v. Observing Figure 8 (a) _ (h), the voltage across the MOSFET is clamped at 60V, and the primary circuit winding & current _ L is about 60A at the highest. For the inductance value of η · 6, the core The required capacity is not large. The switch on duty cycle β is 0.45, and there is still a considerable margin adjustment to correspond to input voltage fluctuations, load effects, and increase output voltage. The current on the high-voltage side winding is much smaller than the current on the low-voltage side, which indicates that the purpose of the voltage and current division of the high-voltage and low-voltage sides has been completely achieved in this creation. Check the voltage waveform of the low-voltage Schottky diode (%). Without a damping circuit, there is no surge voltage at the two ends of the diode, and it is lower than 100V, so the two diodes mentioned above have been reached. Voltage clamping effect. Figure 8 (i) shows the output voltage and current response of 200V, 70W to 780W instantaneous loading and unloading. According to the waveform display, the voltage ripple is less than 2%, and the energy regulation is fast due to the small excitation inductance. Therefore, under severe load changes, the voltage change rate is very low. Another embodiment of the fuel cell power generation system is disclosed in FIG. 9. The test condition is that the load is gradually increased from 70W to 710W, and the voltage and current waveforms of the switch 2 are measured. When the output power increases, the fuel cell voltage decreases, and the duty cycle needs to be increased to maintain a fixed output voltage. At this time, the voltage across switch 2 is still clamped. 24 200541193 is about 60V. Figure 10 is one of the embodiments of the "high-efficiency high-rising-ratio DC / DC converter i" disclosed in the present invention, which is applied to the conversion efficiency of fuel cell boosting to 200v. This embodiment is to verify the feasibility of the theory The calculation basis of performance and efficiency does not include the power consumed by the driving signal circuit. The output power of this creation is operated in 2 lectures: Hours, with reference Π] The leakage inductance A of the shaft inductor factory and the switch 2 Capacitance c ”vibration phenomenon, as shown in the waveform shown in Figure 9⑷, when switch Q is turned on: the voltage Viw is lower than the clamping voltage. In addition, in low-voltage operation, the proportion of switch switching loss and conduction loss is small, so the device outputs at 40w power. At this time, the efficiency has exceeded 92.5%. The highest efficiency exceeds 97%. This part can also be proved by the commonly used board circuit software. When the output power is higher, the output voltage of the fuel cell is also reduced. ^ Figure 1 1 This is one of the embodiments of the "high efficiency and high step-up ratio DC / DC converter behavior", which is applied to a 24V battery boosted to 200V, a load range is 70W to 800W, and the voltage and current waveforms of the switch. The effect of voltage clamping by waveform observation is close to the theoretical analysis. Figure 12 shows the operation conditions; a conversion rate chart. Under this test condition, the highest efficiency exceeds M ″%, and the overall efficiency is slightly lower than that in FIG. 10, because the boost ratio of this embodiment exceeds Us, but its conversion efficiency still exceeds most of the references listed in the prior art. Although the present invention has been disclosed in the foregoing preferred embodiments, it is not intended to limit = hair: 'Any person skilled in the art will not depart from the spirit and scope of the present invention, and can make various changes and modifications. Therefore, the present invention The scope of the patent application attached to the protection scope shall prevail. Tian 25 200541193 [Brief description of the diagram] FIG. 1 shows a block diagram of a “high efficiency and high boost ratio DC / DC converter” disclosed by the present invention. ㈤Commonly used 幵 Pressure converter: ⑷Traditional boost converter; 升压. Boost converter with coupled inductor. The diagram does not show the "high efficiency and high boost ratio DC / DC converter" disclosed by the present invention, and the circuit timing.

圖4表不本發明所揭示「高效率高昇壓比直流/直流換流 器」,電路工作模式。 圖5表不本發明所揭示「高效率高昇壓比直流/直流換流器」 ^高壓電容A之充放電電流iV:2的等效面積圖。 圖6表I本發明所揭示「高效率高昇壓比直流/直流換流器」 與習用耦合電感電路之電壓增益曲線:(a)耦合係數 灸-〇·98,匝數比不同時,責任週期乃與換流器電壓增益曲 線,(b)匝數比等於5,耦合係數從變化至,責 任週期/)與換流器電壓增益曲線。Fig. 4 shows the "high efficiency and high boost ratio DC / DC converter" disclosed by the present invention, and the circuit operating mode. FIG. 5 shows an equivalent area diagram of the charging and discharging current iV: 2 of the “high efficiency and high boost ratio DC / DC converter” disclosed in the present invention. Figure 6 Table I The voltage gain curve of the "high efficiency and high boost ratio DC / DC converter" and the conventional coupling inductor circuit disclosed in the present invention: (a) Coupling coefficient moxibustion-0.098, when the turns ratio is different, the duty cycle It is compared with the inverter voltage gain curve, (b) the turns ratio is equal to 5, the coupling coefficient changes from to, the duty cycle /) and the inverter voltage gain curve.

圖?表不本發明所揭示「高效率高昇壓比直流/直流換流 為」,輸出電壓為L=2⑽^以及耦合係數卜丨,輸入電壓匕 與各種參數之關係曲線:(a)輸入電壓&、開關責任週 期D與責任週期Α之關係曲線圖;(b)輸入電壓fs,與開關 電壓〜之曲線圖。 圖8 表示本發明所揭示「高效率高昇壓比直流/直流換流器」 貫施例之一’應用於燃料電池昇壓至200V,各元件電 壓及電流波形。 26 200541193 圖9表示本發明所揭示「高效率高昇壓比直流/直流換流器」 實施例之一,應用於燃料電池昇壓至200V,負載測量 範圍為70W至710W,開關之電壓及電流波形。 圖10表示本發明所揭示「高效率高昇壓比直流/直流換流器」 實施例之一,應用於燃料電池昇壓至200V之轉換效率。 圖11表示本發明所揭示「高效率高昇壓比直流/直流換流器」 實施例之一,應用於24V蓄電池昇壓至200V,負載測量 範圍為70W至800W,開關之電壓及電流波形。 圖12表示本發明所揭示「高效率高昇壓比直流/直流換流器」 _ 實施例之一,應用於24V蓄電池昇壓至200V之轉換效 率。 圖示主要部分之編號代表意義如下: 101 :直流輸入電路 102 : —次側電路 103 :箝制電路 104 :輔助昇壓電路 φ 105 :二次側電路 106 :濾波電路 107 :直流輸出電路 %:直流輸入電路之直流電壓 7;:具高激磁電流之變壓器(簡稱耦合電感) ρ : —次側電路之MOSFET開關 A :耦合電感一次側繞組(包括激磁電感及漏感) 27 200541193 z2 •輛合電感二次側繞組(包括漏感) a:輔助昇壓電路之輔助電感 c/yv :直流輸入電路之濾波電容 C,:箝制電路之箝制電容 c2 :二次側電路之高壓電容 c3 :輔助昇壓電路之輔助電容 C。:濾波電路之濾波電容 A:箝制電路之箝制二極體 D2 •二次側電路之南壓二極體 队:濾波電路之整流二極體 仏:直流輸出電路之負載Figure? Represents the "high efficiency and high boost ratio DC / DC converter behavior" disclosed in the present invention, the output voltage is L = 2⑽ ^ and the coupling coefficient, and the relationship curve between the input voltage and various parameters: (a) input voltage & 2. Relation curve diagram of switching duty cycle D and duty cycle A; (b) Graph of input voltage fs and switching voltage ~. Fig. 8 shows one embodiment of the "high efficiency and high boost ratio DC / DC converter" disclosed in the present invention, applied to a fuel cell boosted to 200V, and the voltage and current waveforms of each element. 26 200541193 FIG. 9 shows one of the embodiments of the “high efficiency and high boost ratio DC / DC converter” disclosed in the present invention, which is applied to boost the fuel cell to 200V, the load measurement range is 70W to 710W, and the voltage and current waveforms of the switch . FIG. 10 shows one embodiment of the “high efficiency and high boost ratio DC / DC converter” disclosed in the present invention, which is applied to a fuel cell boosting to 200V conversion efficiency. FIG. 11 shows one embodiment of the “high efficiency and high boost ratio DC / DC converter” disclosed in the present invention, which is applied to a 24V battery boosted to 200V, the load measurement range is 70W to 800W, and the voltage and current waveforms of the switch. FIG. 12 shows one of the embodiments of the “high efficiency and high boost ratio DC / DC converter” disclosed in the present invention, which is applied to the conversion efficiency of boosting a 24V battery to 200V. The numbers of the main parts in the figure represent the following meanings: 101: DC input circuit 102:-Secondary circuit 103: Clamping circuit 104: Auxiliary boost circuit φ 105: Secondary side circuit 106: Filter circuit 107: DC output circuit%: DC voltage of DC input circuit 7: Transformer with high field current (coupling inductor for short) ρ: —MOSFET switch of secondary circuit A: Primary winding of coupling inductor (including field inductance and leakage inductance) 27 200541193 z2 Inductor secondary winding (including leakage inductance) a: auxiliary inductor of auxiliary boost circuit c / yv: filter capacitor C of DC input circuit ,: clamp capacitor of clamp circuit c2: high voltage capacitor of secondary circuit c3: auxiliary Auxiliary capacitor C of the boost circuit. : Filter capacitor of the filter circuit A: Clamp diode of the clamp circuit D2 • South voltage diode of the secondary circuit Team: Rectifier diode of the filter circuit 仏: Load of DC output circuit

2828

Claims (1)

200541193 拾、申睛專利範圍·· 1. 一種高效率高昇屡比直流/直流換流器,其甲包含 一一次側電路··包括—個功率半導體開關及—個麵合電感 之一次侧繞組; 路:-個箝制二極體及—個箝制電容所組成; 一 _ Af路.—㈣I助電感及—彳_助電容所組成, 一 ㈣路:包含―個高㈣容、—個高Μ二極體及’一 個耦合電感之二次側繞組; 電路:一個濾波電容及-個整流二極體所構成; 壓’於一次側電路之功率半導體開關導通時, 過功率半導體„導通所提供 r壓電路之輔助電容與辅助電感充電;當功率半導體= 2_間,-次側電路電流離開功率半導體開關,經 =:Γ:極體流入該電路之籍制電容,此時輔助電 二:=:'述兩個電容之電流乃提供-次側繞組漏感 =賓:=然而此電流亦強迫二次側電路之高壓電 路之整流二極體導通所提供路徑, :據== 於r末段期間’轉合電感之二次側繞組, 遞至二次側繞組,其電流將對高壓電容充電,以提:;’ 週期所需放電能量;在功率半導體 _低__:=:=過輔: 組之非極性點’將能量透過鐵心傳送至二次側電路,此^ 29 200541193 日持成3繞組電流’將因該繞組漏感成分,於開關導通 衿形成零電流切換; 本裝置之特徵為:第一點,古曰 數t卜鱼主、 ”、、回外壓比’麵合電感僅需低座 點,二、二裕貝任週期控制’即可輸出高電壓增益;第二 利產^電路可Γ吸收線路電感能量,使得佈線容易,有 帛1±’第二點’箝制電路之箝制電容所吸收能量 ::再運:於昇壓,進一步達成電壓箝制目的;第四點, ,本裝置在非隔離架構下,嚴謹區分低壓側大 二:一同壓側繞組低電流特性,可選用適合電壓範圍之低 、、同放率兀件,第五點,本裝置昇壓過程中,直流電壓 源,功率半導體開關截止時,提供電流至輸出端,此部分 在昇壓過&中不經過開關以及透過磁路轉換,增加轉換效 率〇 2· t ί利申請範圍第1項所述之高效率高昇壓比直流/直流換 U、’其中一次側電路之功率半導體開關具低電壓高電流 之低導通損失特性。 3·^利申請範圍第!項所述之高效率高昇壓比直流/直流換# 其中一次側電路與二次側電路之耦合電感,為一具 咼軋隙之咼激磁電流雙繞組變壓器;利用該變壓器匝數比 2同,區隔各自電壓與電流範圍,低壓側匝數少電流大, 咼壓側反之。 4.=專利申請範圍第1項所述之高效率高昇壓比直流/直流換 流益,其中箝制電路除可以吸收線路雜散電感能量,另外 可再容納耦合電感一次側繞組之漏感能量,且其吸收能量 30 200541193 可再用於㈣,更進—步減少功率半導體開關所承受最高 電壓;輕合電感-次側繞組漏感越高將減少二次側繞組感應 電壓,然而當漏感比例越高,將提高輔助昇壓電路之電 壓,所以可以減少漏感對昇壓比與電壓箝制之影響;是以 本裝置所使用之耗合電感可以接受高漏感變壓器,曰不:限 使用高耦合係數之三明治疊繞方式,運用習用兩繞组 繞法即可完成。 5·專利申請範圍第1項所述之高效率高昇壓比直流/直流換流 器,其中之箝制電路所使用之箝制二極體兩端分別連接功 率半導體開關與箝制電容,所需承受電壓與功率半導體開 關相同,因此可採用低電壓低導通損失之蕭基二極體。汗 6·專利申請範圍第1項所述之高效率高昇壓比直流/直流換流 器,其中之濾波電路所使用之整流二極體與功率半導體開 關導通時序相反,所需承受電壓與功率半導體開關相同, 因此可採用低電壓低導通損失之蕭基二極體。200541193 The scope of patents for patent application and application ... 1. A high-efficiency, high-ratio DC / DC converter, the first of which includes a primary circuit ... including a power semiconductor switch and a primary winding with a surface inductor ; Road:-a clamping diode and-a clamping capacitor; _ Af road.-㈣I auxiliary inductor and 彳 _ auxiliary capacitor, a road: including ― high capacity, ― high M Diode and 'a secondary-side winding of a coupled inductor; Circuit: composed of a filter capacitor and a rectifying diode; When the power semiconductor switch of the primary circuit is turned on, the over-power semiconductor is turned on to provide r The auxiliary capacitor and auxiliary inductor of the voltage circuit are charged; when the power semiconductor = 2_, the current of the -secondary circuit leaves the power semiconductor switch, and the =: Γ: pole body flows into the registered capacitor of the circuit. At this time, the auxiliary electric second: =: 'The current of the two capacitors is provided-the secondary winding leakage inductance = guest: = but this current also forces the path provided by the rectifier diode of the high-voltage circuit of the secondary circuit to conduct, according to = = at the end of r During the second period Winding, pass to the secondary winding, and its current will charge the high-voltage capacitor in order to :; 'discharge energy required for the cycle; at the power semiconductor_low __: =: = over auxiliary: the non-polar point of the group' It is transmitted to the secondary-side circuit through the iron core. This ^ 29 200541193 will hold 3 winding currents, which will cause zero-current switching when the switch is turned on due to the leakage inductance component of the winding. The characteristics of this device are: the first point, the ancient number The main external voltage ratio of the ”fish”, “”, and the external pressure ratio “only the low-inductance inductor is required, and the two or two Yubei cycle control” can output a high voltage gain; the second profitable circuit can absorb the line inductance energy It makes wiring easy. There is 1 ± 'second point' clamping energy absorbed by the clamping capacitor of the clamping circuit: Retransmission: boosting to further achieve the purpose of voltage clamping; the fourth point is that the device is in a non-isolated architecture. Strictly distinguish the low-voltage side sophomore: low-current characteristics of the same voltage-side winding, optional low-voltage, high-frequency components suitable for the voltage range. Fifth, during the voltage boosting process of this device, the DC voltage source and the power semiconductor switch are turned off , Supply current to the output end. This part increases the conversion efficiency without switching and through magnetic circuit conversion during boosting & high efficiency and high boost ratio DC / DC conversion as described in item 1 of the application scope. U, 'The power semiconductor switch of the primary side circuit has a low conduction loss characteristic of low voltage and high current. 3 · ^ Li application scope! The high-efficiency and high-boost ratio DC / DC converter described in the item # wherein the coupling inductance of the primary circuit and the secondary circuit is a double-winding transformer with a magnetizing current of a nip gap; using the transformer turns ratio of 2 is the same, Separate the respective voltage and current ranges, with low turns on the low side and high current, and vice versa on the high voltage side. 4. = High efficiency and high boost ratio DC / DC converter benefits as described in item 1 of the scope of patent applications, in which the clamping circuit can not only absorb the stray inductance energy of the line, but also accommodate the leakage inductance energy of the primary winding of the coupled inductor. And its absorbed energy 30 200541193 can be reused for ㈣, and further-reduce the maximum voltage to which the power semiconductor switch is subjected; the lighter inductance-the higher the secondary winding leakage inductance will reduce the secondary winding induced voltage, but when the leakage inductance ratio The higher the voltage of the auxiliary booster circuit will be increased, so the influence of leakage inductance on the boost ratio and voltage clamping can be reduced; the consumption inductor used in this device can accept high leakage inductance transformers. Sandwich winding method with high coupling coefficient can be completed by using the conventional two-winding method. 5. The high-efficiency and high-boost-rate DC / DC converter according to item 1 of the scope of the patent application. The two ends of the clamping diode used in the clamping circuit are respectively connected to a power semiconductor switch and a clamping capacitor. Power semiconductor switches are the same, so Schottky diodes with low voltage and low conduction loss can be used. Khan 6. The high-efficiency and high-boost-rate DC / DC converter described in item 1 of the scope of the patent application. The rectifier diode used in the filter circuit is opposite to the conduction sequence of the power semiconductor switch. The required voltage and power semiconductor are required. The switches are the same, so Schottky diodes with low voltage and low conduction loss can be used.
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EP2930836A4 (en) * 2012-12-06 2017-03-15 Hep Tech Co. Ltd. Isolated power conversion device and power conversion method therefor
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CN108599569A (en) * 2018-05-15 2018-09-28 安徽工业大学 A kind of quasi- sources Z DC/DC converters of coupling inductance

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