TWI422114B - A self powered feed forward charging circuit and design methodology for the protection of electrical energy storage devices - Google Patents
A self powered feed forward charging circuit and design methodology for the protection of electrical energy storage devices Download PDFInfo
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Description
本發明提供一種超級電容之充電設計方法,特別地,本發明提出一種前饋充電方法對如超級電容此類型的儲能元件之充電技術加以改進,具有低成本,結構簡單的持性。The invention provides a charging design method for a super capacitor. In particular, the present invention provides a feedforward charging method for improving the charging technology of an energy storage element such as a super capacitor, which has low cost and simple structure.
為人所熟知地,電容器在電子電機系統中有許多種用途。As is well known, capacitors have many uses in electronic motor systems.
以能量儲存而論In terms of energy storage
當電容器和其充電線路分離後,電容器會儲存能量,因此可作為電池,提供短時間的電力。電容器常用在配合電池使用的電子設備中,在更換電池時提供電力,避免儲存的資料因沒有電力而消失。電容器也常用在電源供應器中,可緩和全橋或或半橋整流器的輸出。電容器也可用在電容泵浦(Charge Pump)電路中,儲存能量,以產生比輸入電壓更高的電壓。When the capacitor is separated from its charging line, the capacitor stores energy, so it can be used as a battery to provide short-term power. Capacitors are commonly used in electronic devices used in conjunction with batteries to provide power when replacing batteries, to prevent stored data from disappearing due to lack of power. Capacitors are also commonly used in power supplies to mitigate the output of full-bridge or half-bridge rectifiers. Capacitors can also be used in a capacitive pump circuit to store energy to produce a higher voltage than the input voltage.
而一種超級電容(有時也被稱為電力二重層電容器(Electrochemical Double Layer Capacitor(EDLC))或雙電層電容器),是一種擁有高能量密度的電化學電容器,比一般的電解電容器容量高上千倍。所衍生消費者產品應用為:作為在數位相機內具快照功能裝置、可攜式媒體器或太陽能裝置之充電電源等。A supercapacitor (sometimes called an Electrochemical Double Layer Capacitor (EDLC) or an electric double layer capacitor) is an electrochemical capacitor with a high energy density, which is higher than a typical electrolytic capacitor. Thousand times. The derivative consumer product is applied as a charging power source for a snapshot function device, a portable media device or a solar device in a digital camera.
目前產業界常用的超級電容充電方法有三種方法:其中:方法(a):用定電流充電至操作電壓,再用定電壓充電。方法(b):用定電流充電至操作電壓附近,轉換成定功率充電,再用定電壓充電。方法:(c)電壓充電。At present, there are three methods for charging supercapacitors commonly used in the industry: Among them: method (a): charging with a constant current to an operating voltage, and then charging with a constant voltage. Method (b): charging with a constant current to the vicinity of the operating voltage, converting to constant power charging, and then charging with a constant voltage. Method: (c) Voltage charging.
前述兩種方法(a)和方法(b)需要電壓檢測及電流檢測,結構複雜,成本較高,較適合用於高單價高功率的設備。方法(c)雖然結構簡單,但當超級電容電壓超過輸入電壓時即無法充電,故效率不佳,且無法滿足瞬間最大電流或最大容許操作溫度之要求,會影響超級電容的使用壽命。The foregoing two methods (a) and (b) require voltage detection and current detection, and have a complicated structure and high cost, and are suitable for use in equipment with high unit price and high power. Although the method (c) is simple in structure, when the super capacitor voltage exceeds the input voltage, the charging cannot be performed, so the efficiency is not good, and the requirement of the instantaneous maximum current or the maximum allowable operating temperature cannot be met, which may affect the service life of the super capacitor.
因此,如能提供一種對於如超級電容此類型的儲能元件之充電方法及其充電設計電路應是迫切需要的。Therefore, it would be highly desirable to provide a charging method for a storage element such as a supercapacitor and its charging design circuit.
在超級電容的充電過程中,充電器的電壓及電流必須保持在電容容許的最大電壓及最大電流或最大容許操作溫度之下,故產業界通常採用定電流充電,繼之以定電壓充電,或則定電流充電,繼之以定功率和定電壓充電,或只採用簡單的電壓充電。因此,本發明針對如超級電容此類型的電子儲能裝置而提供一種自供電前饋充電電路及設計方法。其與習知技術的區別特徵在於:本案提出一種前饋充電方法及電路來達成與前述各充電法一樣的設計目標,完成一個簡單,低成本的超級電容充電技術。並針對現存的超級電容提出一個理論上的充電設計方法以計算前饋充電器的電路參數。此外,本技術也提出兩種自供電電路,使本充電系統可在無外加電源的狀況下完成充電。During the charging process of the super capacitor, the voltage and current of the charger must be kept below the maximum allowable voltage and maximum current or the maximum allowable operating temperature of the capacitor. Therefore, the industry usually uses constant current charging, followed by constant voltage charging, or The current is charged, followed by constant power and constant voltage charging, or only a simple voltage charging. Accordingly, the present invention is directed to a self-powered feedforward charging circuit and design method for an electronic energy storage device such as a supercapacitor. The difference between the conventional technology and the prior art is that a feedforward charging method and circuit are proposed to achieve the same design goal as the foregoing charging methods, and a simple, low-cost supercapacitor charging technology is completed. A theoretical charging design method is proposed for the existing supercapacitor to calculate the circuit parameters of the feedforward charger. In addition, the present technology also proposes two self-powered circuits, so that the charging system can be charged without an external power supply.
而本案所提出的自供電前饋充電電路及設計方法對於進行充電一般的電容器,亦不會影響到該電容器的使用壽命。The self-powered feedforward charging circuit and design method proposed in the present case will not affect the service life of the capacitor for charging the general capacitor.
根據本發明之一目的,本發明提供一種儲能電路之充電方法,該儲能電路包含多個預設值,包括:According to an aspect of the present invention, a charging method for an energy storage circuit is provided. The energy storage circuit includes a plurality of preset values, including:
(a)藉由使用一自供充電電路來接收一第一電能之部分能量以供應一前饋昇壓充電電路所需啟動電能;以及(b)於該前饋昇壓充電電路被啟動後,該前饋昇壓充電電路以一前饋方式對該儲能電路充電,同時所充電電壓及電流不會超過該儲能電路之該等預設值,及對該自供充電電路進行能量轉移並透過該自供充電電路提供一第二電能至該前饋昇壓充電電路。(a) by using a self-charging circuit to receive a portion of the energy of the first electrical energy to supply a startup power required by a feedforward boost charging circuit; and (b) after the feedforward boost charging circuit is activated, The feedforward boost charging circuit charges the energy storage circuit in a feedforward manner, and the charged voltage and current do not exceed the preset values of the energy storage circuit, and energy transfer and transmission of the self-charging circuit The self-charging circuit provides a second electrical energy to the feedforward boost charging circuit.
根據本發明之又一目的,本發明提供一種自供電前饋充電電路,包含:一自供充電電路,儲存一第一電能之部分能量;一前饋昇壓充電電路,接收來自該自供充電電路之該第一電能之部分能量而被啟動;以及一儲能電路,含一超級電容及一保護電路,該前饋昇壓充電電路以一前饋方式對該儲能電路充電,同時該前饋昇壓充電電路啟動該保護電路,且該保護電路限制該超級電容之一最大瞬間電流或最大操作溫度及一最大電壓於一預設值內。According to still another object of the present invention, a self-powered feedforward charging circuit includes: a self-charging circuit for storing a portion of energy of a first electrical energy; and a feedforward boosting charging circuit for receiving from the self-charging circuit The energy of the first electric energy is activated; and a storage circuit includes a super capacitor and a protection circuit, and the feedforward boost charging circuit charges the energy storage circuit in a feedforward manner, and the feed forward The voltage charging circuit activates the protection circuit, and the protection circuit limits one of the supercapacitors to a maximum instantaneous current or a maximum operating temperature and a maximum voltage within a predetermined value.
該超級電容的應用方向將會隨著單位體積的儲存容量增加而大為擴展。目前的充電方法包含適合高端產品應用(如汽車、太陽能、電源等)或適合低端產品應用(如玩具、緊急照明等)的技術。這些設計不是結構複雜,成本較高(指高端而言),就是效率不佳,且無法滿足瞬間最大電流(或最大容許操作溫度)之要求,會影響超級電容的使用壽命(指低端而言)。The application direction of the supercapacitor will greatly expand as the storage capacity per unit volume increases. Current charging methods include technologies suitable for high-end product applications (such as automotive, solar, power, etc.) or for low-end applications (such as toys, emergency lighting, etc.). These designs are not complex in structure, high in cost (in terms of high-end), and are inefficient, and cannot meet the requirements of instantaneous maximum current (or maximum allowable operating temperature), which will affect the service life of supercapacitors (referring to the low end). ).
因此,如第1圖所示,該圖為本案根據習知超級電容進行充電時所衍生的缺陋而提出一種自供電前饋充電電路1。其中該自供電前饋充電電路1包含三個電路,分別是一自供充電電路11、一前饋昇壓充電電路12及一儲能電路13。其中,如第2圖所示:對於各電路11、12及13內較詳細的電子元件連接關係為:該自供充電電路11包含一第一二極體D1、一第二二極體D2、一第一電容C1、一第二電容C2、一第四電阻R4及與該第二電容C2並聯之具有穩定電壓功能之一齊納二極體Z1。Therefore, as shown in FIG. 1, the figure proposes a self-powered feedforward charging circuit 1 which is derived from the conventional supercapacitor charging. The self-powered feedforward charging circuit 1 includes three circuits, which are a self-charging circuit 11, a feedforward boost charging circuit 12, and a tank circuit 13. As shown in FIG. 2, the more detailed electronic component connection relationship in each of the circuits 11, 12, and 13 is that the self-charging circuit 11 includes a first diode D1 and a second diode D2. The first capacitor C1, the second capacitor C2, the fourth resistor R4, and the Zener diode Z1 having a stable voltage function in parallel with the second capacitor C2.
該前饋昇壓充電電路12包含一第一電阻R1、一第二電阻R2、一第三電阻R3、一電感L、一第一切換開關S1、一第三二極體D3及一比較器CM 1。該儲能電路13包含一超級電容SC1及包含一第二切換開關S2及其串聯接的一第五電阻R5之一保護電路131。The feedforward boost charging circuit 12 includes a first resistor R1, a second resistor R2, a third resistor R3, an inductor L, a first switch S1, a third diode D3, and a comparator CM. 1. The energy storage circuit 13 includes a super capacitor SC1 and a protection circuit 131 including a second switching switch S2 and a fifth resistor R5 connected in series.
其中,本案之第一切換開關S1係以N型金屬氧化物半導體場效電晶體,簡稱NMOSFET為實施範例,而對於以NMOSFET為第一切換開關S1之各端點的連接較詳細的說明為:該第一切換開關S1之一源極S(Source Terminal)耦接於一接地端、該第一切換開關S1之一汲極D(Drain Terminal)耦接於形成在該電感L及該第三二極體D3之間的一接點Vy以及該第一切換開關S1之一閘極G(Gate Terminal)耦接於該比較器CM 1之一輸出端。The first switch S1 of the present invention is an N-type metal oxide semiconductor field effect transistor, abbreviated as NMOSFET for the implementation example, and a detailed description of the connection of the NMOSFET as the end point of the first switch S1 is as follows: A source terminal S of the first switch S1 is coupled to a ground, and a Drain terminal of the first switch S1 is coupled to the inductor L and the third A contact Vy between the poles D3 and a gate terminal G of the first switch S1 are coupled to one of the outputs of the comparator CM1.
其中,該第二切換開關S2為N Channel Depletion MOS,該第二切換開關S2之一汲極D 耦接於該第五電阻R5之一端、該第二切換開關S2之一源極S耦接於該超級電容SC1之一端以及該第二切換開關S2之一閘極G耦接於該第五電阻R5之另一端。Wherein, the second switch S2 is N Channel Depletion MOS, one of the second switch S2 is coupled to the drain D of the end of the fifth resistor R5, the second one of the switch S2 is coupled to a source S One end of the super capacitor SC1 and one gate G of the second switch S2 are coupled to the other end of the fifth resistor R5.
值得注意地,於充電初始狀態下,在該儲能電路13內與該保護電路131以並聯形式連接的該超級電容SC1預設有一最大容許瞬間電流值IMAX (或最大容許操作溫度)及一最大容許電壓預設值VMAX 。且令人理解地,該自供電前饋充電電路11於各充電路徑配置具「整流(Rectifying)」功能之該第一二極體D1、該第二二極體D2及在該儲能電路13內配置該第三二極體D以防止該第一電容C1、該第二電容C2及該超級電容SC1所儲存的電流逆向。Notably, in the initial state of charging, the super capacitor SC1 connected in parallel with the protection circuit 131 in the tank circuit 13 is preset with a maximum allowable instantaneous current value I MAX (or a maximum allowable operating temperature) and a The maximum allowable voltage is preset to V MAX . And the self-powered feedforward charging circuit 11 is configured with the first diode D1 and the second diode D2 having a "Rectifying" function on each charging path and the storage circuit 13 The third diode D is disposed to prevent the current stored in the first capacitor C1, the second capacitor C2, and the super capacitor SC1 from being reversed.
對於超級電容SC1充電期間的描述Description of the charging period for the super capacitor SC1
包括化學能(電池)及光能(光電池、太陽能電池等)等此類型一外部能量(亦稱之一第一電能A)釋放下,該第一電能A經由在該自供充電電路11內的該第四電阻R4使得該第二電容C2儲存該第一電能A。此一充電狀態亦是該前饋昇壓充電電路12被啟動前,該第一電能A透過該第四電阻R4對該第二電容C2進行充電(其中該第二電容C2所儲存的能量稱之為一第二電能)。This type of external energy (also referred to as one of the first electric energy A), including chemical energy (battery) and light energy (photovoltaic cell, solar cell, etc.), is released, and the first electric energy A is passed through the self-charging circuit 11 The fourth resistor R4 causes the second capacitor C2 to store the first power A. The state of charge is also that the first power A is charged through the fourth resistor R4 before the feedforward boost charging circuit 12 is activated (the energy stored in the second capacitor C2 is called For a second power).
經一充電時間t,使得一節點電壓Vp之電壓值達到一閥值進而透過一第一充電路徑path 1及一第二充電路徑path 2分別地啟動該前饋昇壓充電電路12內該比較器CM 1及該第一切換開關S1,而該比較器CM1是開集極式輸出,該節點電壓Vp透過該第三電阻R3產生一驅動電流,使該比較器CM1內部電晶體導通。After a charging time t, the voltage value of a node voltage Vp reaches a threshold value, and the comparator in the feedforward boost charging circuit 12 is respectively activated through a first charging path path 1 and a second charging path 2 CM 1 and the first switch S1, and the comparator CM1 is an open collector output. The node voltage Vp generates a driving current through the third resistor R3 to turn on the internal transistor of the comparator CM1.
且為人所熟知地,在該前饋昇壓充電電路12內的該比較器CM 1為具兩端(正端(+)及負端(-))分別接收兩不同輸入電壓值而在該比較器CM 1之該輸出端輸出該節點電壓Vp之電壓值或接近零伏電壓值。舉例來說,若該比較器CM 1的正端接收5V及該比較器CM 1的負端接收4V時,則該比較器CM 1的該輸出端輸出該節點電壓Vp之電壓值,若該比較器CM 1的正端接收4V及該比較器CM 1的負端接收5V,則該比較器CM 1的該輸出端輸出接近零伏電壓值。And well known, the comparator CM 1 in the feed forward boost charging circuit 12 has two different input voltage values respectively at the two ends (the positive end (+) and the negative end (-)). The output of the comparator CM 1 outputs a voltage value of the node voltage Vp or a value close to zero volts. For example, if the positive terminal of the comparator CM 1 receives 5V and the negative terminal of the comparator CM 1 receives 4V, the output terminal of the comparator CM 1 outputs the voltage value of the node voltage Vp, if the comparison The positive terminal of the CM 1 receives 4V and the negative terminal of the comparator CM 1 receives 5V, and the output of the comparator CM 1 outputs a value close to zero volts.
在本案中,第3圖所示,於該比較器CM 1之該正端接收一固定頻率(Constant Frequency)固定峯值的鋸齒波(Saw Tooth Wave)(需了解地:該鋸齒波為一種非正弦波形形式(Non-Sinusoidal Waveform,其中被輸入至該比較器CM 1之該正端之該鋸齒波係以一較和緩坡度(Ramp)向上爬升,並以一陡峭(sharp)坡度快速度下滑的波形形式)。於該比較器CM 1之該負端接收在該第一電阻R1及該第二電阻R2之間的一輸入電壓Vd,其中該輸入電壓Vd经由一分壓電路...式1所得之電壓In the present case, as shown in FIG. 3, a positive frequency (Saw Tooth Wave) of a fixed frequency is received at the positive end of the comparator CM 1 (need to understand that the sawtooth wave is a non-sinusoidal wave) Waveform (Non-Sinusoidal Waveform, in which the sawtooth wave input to the positive end of the comparator CM 1 climbs upwards with a gentle slope (Ramp) and rapidly falls with a steep slope. Forming a receiving voltage Vd between the first resistor R1 and the second resistor R2 at the negative terminal of the comparator CM1, wherein the input voltage Vd is via a voltage dividing circuit... The resulting voltage
Vd=V(1)*(R1/(R1+R2))...式1,其中該鋸齒波的頻率為該輸入電壓Vd的頻率10倍以上。Vd=V(1)*(R1/(R1+R2)) Equation 1, wherein the frequency of the sawtooth wave is 10 times or more the frequency of the input voltage Vd.
第3圖所示,該圖為該比較器CM 1分別接收兩不同電電壓值及在一輸出端輸出較大電壓值之波形示意圖,其中縱軸代表電壓值,橫軸代表時間。As shown in FIG. 3, the figure is a waveform diagram of the comparator CM 1 receiving two different electrical voltage values and outputting a large voltage value at an output terminal, wherein the vertical axis represents the voltage value and the horizontal axis represents the time.
於T1期間,該比較器CM 1之該正端所接收該鋸齒波之一電壓值Vs大於該比較器CM 1之該負端所接收該輸入電壓Vd時,該比較器CM 1之該輸出端輸出該節點電壓Vp,其中該節點電壓Vp大於一特定的臨界電壓Vth (Threshold Voltage),之後,當VGS >Vth 時,NMOSFET S1之源極S及汲極D間開始導通。此時作為開關之NMOSFET S1呈開(Turn On)狀態。而在作為開關之NMOSFET S1呈開狀態下,該第一電能A對該前饋昇壓充電電路12內的該電感L進行充電,同時,該第一電能A經由該第一二極體D1對該第一電容C1進行充電。此時,該節點電壓Vy呈零伏,使該第三二極體D3呈不導通狀態下,導致該電感L所儲存能量無法對該超級電容SC1進行充電。當該前饋昇壓充電電路12處於一穩態時,流經該電感L之電流處於一非連續狀態(Discontinuous Current Mode)。During the period T1, when the positive terminal receives a voltage value Vs of the sawtooth wave that is greater than the input voltage Vd received by the negative terminal of the comparator CM1, the output of the comparator CM1 The node voltage Vp is output, wherein the node voltage Vp is greater than a specific threshold voltage V th (Threshold Voltage), and then, when V GS >V th , the source S and the drain D of the NMOSFET S1 start to conduct. At this time, the NMOSFET S1 as a switch is in a Turn On state. The first power A charges the inductor L in the feedforward boost charging circuit 12 while the NMOSFET S1 as the switch is in an open state, and the first power A passes through the first diode D1. The first capacitor C1 is charged. At this time, the node voltage Vy is zero volts, so that the third diode D3 is in a non-conducting state, and the stored energy of the inductor L cannot charge the super capacitor SC1. When the feedforward boost charging circuit 12 is in a steady state, the current flowing through the inductor L is in a discontinuous current mode.
反之,於T2期間,該比較器CM 1之該正端所接收該鋸齒波之一電壓值Vs小於該比較器CM 1之該負端所接收該輸入電壓Vd時,該比較器CM 1之該輸出端輸出接近零伏電壓值,其中所輸出的電壓值小於該臨界電壓Vth ,之後,使得VGS <Vth ,NMOSFET S1之源極S及汲極D間處於截止狀態。此時作為開關之NMOSFET S1呈閉(Turn Off)狀態。On the other hand, during the period T2, when the voltage value Vs of the sawtooth wave received by the positive terminal of the comparator CM1 is less than the input voltage Vd received by the negative terminal of the comparator CM1, the comparator CM1 The output outputs a voltage value close to zero volts, wherein the output voltage value is less than the threshold voltage Vth , and then V GS <V th , and the source S and the drain D of the NMOSFET S1 are in an off state. At this time, the NMOSFET S1 as a switch is in a Turn Off state.
此時作為開關之NMOSFET S1呈閉狀態,該節點電壓Vy昇壓使該第三二極體D3呈導通狀態,該電感L所儲存的能量經由該第三二極體D3對該超級電容SC1進行充電,其相當於電感L所儲存之能量轉移至該超級電容SC1,該電感L之部分電流IL 經該第三二極體D3流至包含該第二切換開關S2及該第五電阻R5之該保護電路131內。及該第一電容C1所儲存的能量經由該第二二極體D2轉移至該第二電容C2。 當該前饋昇壓充電電路12處於一穩態時,流經該電感L之電流處於一非連續狀態(Discontinuous Current Mode)。At this time, the NMOSFET S1 as a switch is in a closed state, and the node voltage Vy is boosted to turn on the third diode D3. The energy stored in the inductor L is subjected to the super capacitor SC1 via the third diode D3. Charging, the energy stored in the inductor L is transferred to the super capacitor SC1, and a part of the current I L of the inductor L flows through the third diode D3 to include the second switch S2 and the fifth resistor R5. The protection circuit 131 is inside. The energy stored in the first capacitor C1 is transferred to the second capacitor C2 via the second diode D2. When the feedforward boost charging circuit 12 is in a steady state, the current flowing through the inductor L is in a discontinuous current mode.
然而對於圖3中T1期間的NMOSFET呈開(Turn On)時間的長短,本案提出...具前饋式模式(Feed Forward)之...式2However, for the length of the Turn-On time of the NMOSFET during T1 in Figure 3, this paper proposes...Feed Forward mode...
Ton/T=D,則Vs(1-D)=V(1)*(R1/(R1+R2))...式2Ton/T=D, then Vs(1-D)=V(1)*(R1/(R1+R2))... Equation 2
其中D為Duty Cycle,Ton=T1,Vs為該鋸齒波的最大振幅,T=該鋸齒波的頻率f的倒數(T=T1+T2,T2為NMOSFET呈閉(Turn Off)時間),Ton時間的越長,代表該第一電能A對該電感L進行充電時間變長,同時,該第一電能A經由該第一二極體D1對該第一電容C1進行充電時間也隨之變長,反之亦然。Where D is Duty Cycle, Ton=T1, Vs is the maximum amplitude of the sawtooth wave, T=the reciprocal of the frequency f of the sawtooth wave (T=T1+T2, T2 is the NMOSFET turn-off time), Ton time The longer the length, the longer the charging time of the inductor L is, and the charging time of the first capacitor C1 is longer by the first power A. vice versa.
在於T2期間,該電感L所儲存的能量經由該第三二極體D3而對該超級電容SC1進行充電時,而為避免充電的電壓Vy減0.7V(0.7V為該第三二極體D3的順向偏壓,其中Vy-0.7=VO1 )超過該超級電容SC1之該最大容許電壓預設值VMAX ,本案提出...式3During the period T2, the energy stored in the inductor L is charged to the super capacitor SC1 via the third diode D3, and the voltage Vy to avoid charging is reduced by 0.7V (0.7V is the third diode D3). The forward bias voltage, wherein Vy-0.7=V O1 ) exceeds the maximum allowable voltage preset value V MAX of the super capacitor SC1, and the present invention proposes
K=2L/((R5+N Channel Depletion Mode的內阻)*T)...式3K=2L/((R5+N Channel Depletion Mode internal resistance)*T)...Form 3
值得注意地,其中,當D約等於0.43時,該節點電壓Vy的值最大。設計時要選擇適當的該第一電阻R1、該第二電阻R2及K值,使(該節點電壓Vy減0.7V)即使在D約等於0.43時也不超過該超級電容SC1之該最大容許電壓預設值VMAX 。Notably, wherein the value of the node voltage Vy is the largest when D is approximately equal to 0.43. The design should select the appropriate first resistor R1, the second resistor R2 and the K value so that (the node voltage Vy is reduced by 0.7V), even if D is equal to 0.43, the maximum allowable voltage of the super capacitor SC1 is not exceeded. The preset value is V MAX .
在於T2期間對該電感L所儲存的能量經由該第三二極體D3對該超級電容SC1進行充電,為避免充電的電流超過該超級電容SC1之該最大容許瞬間電流值IMAX (或最大容許操作溫度),藉由下列一電感峯值電流ip ...式4The energy stored in the inductor L during T2 is charged to the supercapacitor SC1 via the third diode D3, so that the current to avoid charging exceeds the maximum allowable instantaneous current value I MAX of the super capacitor SC1 (or maximum allowable Operating temperature), by the following inductor peak current i p ...
依據超級電容SC1充電期間與該超級電容SC1並聯的保護電路的運作描述Description of the operation of the protection circuit in parallel with the supercapacitor SC1 during charging of the supercapacitor SC1
對於該超級電容SC1充電期,當N Channel Depletion MOS S2之VGS >Vth ,N Channel depletion MOS S2之源極S及汲極D間處於導通狀態。此時作為開關之N Channel Depletion MOS S2呈開(Turn On)狀態。依據式3選定(該第五電阻R5的電阻值+N Channel Depletion Mode的內阻值)使得VO1 不超過該超級電容SC1之該最大容許電壓預設值VMAX 。For the charging period of the super capacitor SC1, when V GS >V th of the N Channel Depletion MOS S2, the source S and the drain D of the N Channel depletion MOS S2 are in an on state. At this time, the N Channel Depletion MOS S2 as a switch is in a Turn On state. According to Equation 3 (the resistance value of the fifth resistor R5 + the internal resistance value of the N Channel Depletion Mode), V O1 does not exceed the maximum allowable voltage preset value V MAX of the super capacitor SC1.
對於該超級電容SC1充電完畢,當N Channel Depletion MOS S2之VGS <Vth ,N channel depletion MOS S2之源極S及汲極D間處於截止狀態。此時作為開關之N Channel Depletion MOS S2呈閉(Turn Off)狀態,以避免該超級電容SC1所儲存的電荷流至該第五電阻R5。When the super capacitor SC1 is charged, when the V GS <V th of the N Channel Depletion MOS S2, the source S and the drain D of the N channel depletion MOS S2 are in an off state. At this time, the N Channel Depletion MOS S2 as a switch is in a Turn Off state to prevent the charge stored in the super capacitor SC1 from flowing to the fifth resistor R5.
因此,針對習知之對超級電容SC1進行充電之缺陋,本案之該前饋昇壓充電電路12以一前饋方式對於該超級電容SC1此類型的儲能裝置進行充電已有良好的驗證。Therefore, in view of the conventional shortage of charging the supercapacitor SC1, the feedforward boost charging circuit 12 of the present invention has been well verified for charging the supercapacitor SC1 of this type of energy storage device in a feedforward manner.
基於該自供充電電路11、該前饋昇壓充電電路12及該儲能電路13之內部各電子元件之連接電路關係,當與該保護電路131並聯該超級電容SC1置換為一般的電容器時,該前饋昇壓充電電路以前述提及前饋方式對一般電容器進行充電亦不會影響到該電容的使用壽命。Based on the connection circuit relationship between the self-charging circuit 11 , the feedforward boost charging circuit 12 and the internal electronic components of the storage circuit 13 , when the super capacitor SC1 is replaced with a general capacitor in parallel with the protection circuit 131 , The feedforward boost charging circuit charging the general capacitor in the aforementioned feedforward manner does not affect the service life of the capacitor.
1‧‧‧自供電前饋充電電路1‧‧‧ self-powered feedforward charging circuit
11‧‧‧自供充電電路11‧‧‧ self-charging circuit
D1‧‧‧第一二極體D1‧‧‧First Diode
D2‧‧‧第二二極體D2‧‧‧ second diode
C1‧‧‧第一電容C1‧‧‧first capacitor
C2‧‧‧第二電容C2‧‧‧second capacitor
R4‧‧‧第四電阻R4‧‧‧fourth resistor
Z1‧‧‧齊納二極體Z1‧‧‧Zina diode
12‧‧‧前饋昇壓充電電路12‧‧‧Feed-forward boost charging circuit
R1‧‧‧第一電阻R1‧‧‧first resistance
R2‧‧‧第二電阻R2‧‧‧second resistance
R3‧‧‧第三電阻R3‧‧‧ third resistor
L‧‧‧電感L‧‧‧Inductance
S1‧‧‧第一切換開關S1‧‧‧first switch
D3‧‧‧第三二極體D3‧‧‧ third diode
CM 1‧‧‧比較器CM 1‧‧‧ comparator
13‧‧‧儲能電路13‧‧‧ Energy storage circuit
131‧‧‧保護電路131‧‧‧Protection circuit
SC1‧‧‧超級電容SC1‧‧‧Super Capacitor
S2‧‧‧第二切換開關S2‧‧‧Second switch
R5‧‧‧第五電阻R5‧‧‧ fifth resistor
第1圖,該圖為自供電前饋充電電路的方塊示意圖。Figure 1, which is a block diagram of a self-powered feedforward charging circuit.
第2圖,該圖為自供充電電路、前饋昇壓充電電路及一儲能電路內部較詳細的電子構件的圖示。2 is a diagram of a more detailed electronic component inside a self-charging circuit, a feedforward boost charging circuit, and a tank circuit.
第3圖所示,該圖為該比較器CM 1分別接收兩不同電電壓值及在一輸出端輸出較大電壓值之波形示意圖,其中縱軸電壓值,橫軸代表時間。As shown in FIG. 3, the figure is a waveform diagram of the comparator CM 1 receiving two different electric voltage values and outputting a large voltage value at an output end, wherein the vertical axis voltage value and the horizontal axis represent time.
1...自供電前饋充電電路1. . . Self-powered feedforward charging circuit
11...自供充電電路11. . . Self-charging circuit
D1...第一二極體D1. . . First diode
D2...第二二極體D2. . . Second diode
C1...第一電容C1. . . First capacitor
C2...第二電容C2. . . Second capacitor
R4...第四電阻R4. . . Fourth resistor
Z1...齊納二極體Z1. . . Zener diode
12...前饋昇壓充電電路12. . . Feedforward boost charging circuit
R1...第一電阻R1. . . First resistance
R2...第二電阻R2. . . Second resistance
R3...第三電阻R3. . . Third resistance
L...電感L. . . inductance
S1...第一切換開關S1. . . First switch
D3...第三二極體D3. . . Third diode
CM1...比較器CM1. . . Comparators
13...儲能電路13. . . Energy storage circuit
131...保護電路131. . . protect the circuit
SC1...超級電容SC1. . . Super capacitor
S2...第二切換開關S2. . . Second switch
R5...第五電阻R5. . . Fifth resistor
Claims (12)
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TW200541193A (en) * | 2004-06-10 | 2005-12-16 | Wei Zheng Zhong | High-efficiency DC/DC converter with high voltage gain |
TW200727565A (en) * | 2005-10-05 | 2007-07-16 | Seiko Instr Inc | Electronic equipment having a boost DC-DC converter |
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