TW200420201A - Plasma generation device, plasma control method and substrate manufacturing method - Google Patents
Plasma generation device, plasma control method and substrate manufacturing methodInfo
- Publication number
- TW200420201A TW200420201A TW092135000A TW92135000A TW200420201A TW 200420201 A TW200420201 A TW 200420201A TW 092135000 A TW092135000 A TW 092135000A TW 92135000 A TW92135000 A TW 92135000A TW 200420201 A TW200420201 A TW 200420201A
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- generation device
- vacuum vessel
- conductor
- substrate manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 4
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002363988A JP3618333B2 (ja) | 2002-12-16 | 2002-12-16 | プラズマ生成装置 |
JP2002363989A JP3920209B2 (ja) | 2002-12-16 | 2002-12-16 | プラズマ生成装置 |
JP2003014718A JP2004228354A (ja) | 2003-01-23 | 2003-01-23 | プラズマ生成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200420201A true TW200420201A (en) | 2004-10-01 |
TWI362901B TWI362901B (zh) | 2012-04-21 |
Family
ID=32600722
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099122628A TWI391035B (zh) | 2002-12-16 | 2003-12-11 | Plasma generation device, plasma control method and substrate manufacturing method (1) |
TW092135000A TW200420201A (en) | 2002-12-16 | 2003-12-11 | Plasma generation device, plasma control method and substrate manufacturing method |
TW099122626A TW201041455A (en) | 2002-12-16 | 2003-12-11 | Plasma generation device, plasma control method, and substrate manufacturing method |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099122628A TWI391035B (zh) | 2002-12-16 | 2003-12-11 | Plasma generation device, plasma control method and substrate manufacturing method (1) |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099122626A TW201041455A (en) | 2002-12-16 | 2003-12-11 | Plasma generation device, plasma control method, and substrate manufacturing method |
Country Status (5)
Country | Link |
---|---|
US (2) | US7785441B2 (zh) |
EP (2) | EP2259663B1 (zh) |
KR (4) | KR101090726B1 (zh) |
TW (3) | TWI391035B (zh) |
WO (1) | WO2004056159A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI400997B (zh) * | 2007-03-30 | 2013-07-01 | Mitsui Shipbuilding Eng | 電漿產生裝置及電漿成膜裝置 |
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KR100858102B1 (ko) * | 2004-03-26 | 2008-09-10 | 닛신덴키 가부시키 가이샤 | 플라즈마발생장치 |
JP4951501B2 (ja) * | 2005-03-01 | 2012-06-13 | 株式会社日立国際電気 | 基板処理装置および半導体デバイスの製造方法 |
JP2007123008A (ja) * | 2005-10-27 | 2007-05-17 | Nissin Electric Co Ltd | プラズマ生成方法及び装置並びにプラズマ処理装置 |
JP2007149638A (ja) * | 2005-10-27 | 2007-06-14 | Nissin Electric Co Ltd | プラズマ生成方法及び装置並びにプラズマ処理装置 |
US20070095281A1 (en) * | 2005-11-01 | 2007-05-03 | Stowell Michael W | System and method for power function ramping of microwave liner discharge sources |
JP2007126749A (ja) * | 2005-11-01 | 2007-05-24 | Applied Films Corp | 新しい膜特性を達成するためのpecvd放電源の電力及び電力関連ファンクションの変調のためのシステム及び方法 |
JP2007220600A (ja) * | 2006-02-20 | 2007-08-30 | Nissin Electric Co Ltd | プラズマ生成方法及びプラズマ生成装置並びにプラズマ処理装置 |
JP2007220594A (ja) * | 2006-02-20 | 2007-08-30 | Nissin Electric Co Ltd | プラズマ生成方法及びプラズマ生成装置並びにプラズマ処理装置 |
EP2006888A4 (en) * | 2006-03-30 | 2011-11-09 | Mitsui Shipbuilding Eng | METHOD AND DEVICE FOR GROWING A PLASMAATOMIC LAYER |
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JP5391209B2 (ja) | 2009-01-15 | 2014-01-15 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP5572329B2 (ja) * | 2009-01-15 | 2014-08-13 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ生成装置 |
JP5155235B2 (ja) * | 2009-01-15 | 2013-03-06 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ生成装置 |
US8992723B2 (en) * | 2009-02-13 | 2015-03-31 | Applied Material, Inc. | RF bus and RF return bus for plasma chamber electrode |
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JP5400434B2 (ja) * | 2009-03-11 | 2014-01-29 | 株式会社イー・エム・ディー | プラズマ処理装置 |
CN202888133U (zh) * | 2009-09-29 | 2013-04-17 | 应用材料公司 | 用于将射频功率耦合到等离子体腔室的装置 |
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US8901935B2 (en) | 2009-11-19 | 2014-12-02 | Lam Research Corporation | Methods and apparatus for detecting the confinement state of plasma in a plasma processing system |
TWI531023B (zh) * | 2009-11-19 | 2016-04-21 | 蘭姆研究公司 | 電漿處理系統之控制方法及設備 |
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US9279179B2 (en) * | 2012-02-06 | 2016-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi coil target design |
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US10325759B2 (en) | 2012-02-22 | 2019-06-18 | Lam Research Corporation | Multiple control modes |
US9171699B2 (en) | 2012-02-22 | 2015-10-27 | Lam Research Corporation | Impedance-based adjustment of power and frequency |
US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
US9197196B2 (en) | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
US9502216B2 (en) | 2013-01-31 | 2016-11-22 | Lam Research Corporation | Using modeling to determine wafer bias associated with a plasma system |
US9462672B2 (en) | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
US10128090B2 (en) | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
US9842725B2 (en) | 2013-01-31 | 2017-12-12 | Lam Research Corporation | Using modeling to determine ion energy associated with a plasma system |
US9368329B2 (en) | 2012-02-22 | 2016-06-14 | Lam Research Corporation | Methods and apparatus for synchronizing RF pulses in a plasma processing system |
US9295148B2 (en) | 2012-12-14 | 2016-03-22 | Lam Research Corporation | Computation of statistics for statistical data decimation |
US9408288B2 (en) | 2012-09-14 | 2016-08-02 | Lam Research Corporation | Edge ramping |
US9779196B2 (en) | 2013-01-31 | 2017-10-03 | Lam Research Corporation | Segmenting a model within a plasma system |
US9620337B2 (en) | 2013-01-31 | 2017-04-11 | Lam Research Corporation | Determining a malfunctioning device in a plasma system |
US9107284B2 (en) | 2013-03-13 | 2015-08-11 | Lam Research Corporation | Chamber matching using voltage control mode |
US9119283B2 (en) | 2013-03-14 | 2015-08-25 | Lam Research Corporation | Chamber matching for power control mode |
US10426001B2 (en) * | 2013-03-15 | 2019-09-24 | Tokyo Electron Limited | Processing system for electromagnetic wave treatment of a substrate at microwave frequencies |
US9502221B2 (en) | 2013-07-26 | 2016-11-22 | Lam Research Corporation | Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching |
KR101568653B1 (ko) * | 2013-11-12 | 2015-11-12 | (주)얼라이드 테크 파인더즈 | 플라즈마 장치 |
US9594105B2 (en) | 2014-01-10 | 2017-03-14 | Lam Research Corporation | Cable power loss determination for virtual metrology |
US10950421B2 (en) | 2014-04-21 | 2021-03-16 | Lam Research Corporation | Using modeling for identifying a location of a fault in an RF transmission system for a plasma system |
US9642014B2 (en) * | 2014-06-09 | 2017-05-02 | Nokomis, Inc. | Non-contact electromagnetic illuminated detection of part anomalies for cyber physical security |
US9613777B2 (en) | 2014-09-11 | 2017-04-04 | Varian Semiconductor Equipment Associates, Inc. | Uniformity control using adjustable internal antennas |
US9536749B2 (en) | 2014-12-15 | 2017-01-03 | Lam Research Corporation | Ion energy control by RF pulse shape |
JP5977853B1 (ja) * | 2015-03-20 | 2016-08-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体 |
US10431425B2 (en) * | 2016-02-23 | 2019-10-01 | Tokyo Electron Limited | Poly-phased inductively coupled plasma source |
US9721759B1 (en) | 2016-04-04 | 2017-08-01 | Aixtron Se | System and method for distributing RF power to a plasma source |
JP6541623B2 (ja) * | 2016-06-20 | 2019-07-10 | 東京エレクトロン株式会社 | プラズマ処理装置、及び波形補正方法 |
US10777386B2 (en) * | 2017-10-17 | 2020-09-15 | Lam Research Corporation | Methods for controlling plasma glow discharge in a plasma chamber |
WO2020054005A1 (ja) | 2018-09-13 | 2020-03-19 | 株式会社日立国際電気 | 高周波電源装置および基板処理装置 |
JP7221115B2 (ja) * | 2019-04-03 | 2023-02-13 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
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JP2005064284A (ja) * | 2003-08-14 | 2005-03-10 | Asm Japan Kk | 半導体基板保持装置 |
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-
2003
- 2003-12-11 TW TW099122628A patent/TWI391035B/zh not_active IP Right Cessation
- 2003-12-11 TW TW092135000A patent/TW200420201A/zh not_active IP Right Cessation
- 2003-12-11 TW TW099122626A patent/TW201041455A/zh not_active IP Right Cessation
- 2003-12-12 KR KR1020057011022A patent/KR101090726B1/ko not_active Expired - Lifetime
- 2003-12-12 KR KR1020117019923A patent/KR101199995B1/ko not_active Expired - Lifetime
- 2003-12-12 EP EP10180427.6A patent/EP2259663B1/en not_active Expired - Lifetime
- 2003-12-12 WO PCT/JP2003/016007 patent/WO2004056159A1/ja active Application Filing
- 2003-12-12 EP EP03780748.4A patent/EP1575343B1/en not_active Expired - Lifetime
- 2003-12-12 US US10/539,254 patent/US7785441B2/en not_active Expired - Lifetime
- 2003-12-12 KR KR1020117019922A patent/KR101199994B1/ko not_active Expired - Lifetime
- 2003-12-12 KR KR1020117019924A patent/KR101186822B1/ko not_active Expired - Lifetime
-
2010
- 2010-07-14 US US12/836,161 patent/US8444806B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI400997B (zh) * | 2007-03-30 | 2013-07-01 | Mitsui Shipbuilding Eng | 電漿產生裝置及電漿成膜裝置 |
Also Published As
Publication number | Publication date |
---|---|
EP1575343A1 (en) | 2005-09-14 |
EP1575343A4 (en) | 2008-01-23 |
KR101186822B1 (ko) | 2012-09-28 |
TW201041455A (en) | 2010-11-16 |
KR20050088438A (ko) | 2005-09-06 |
KR101199995B1 (ko) | 2012-11-12 |
TWI362901B (zh) | 2012-04-21 |
TW201041456A (en) | 2010-11-16 |
TWI391035B (zh) | 2013-03-21 |
TWI368463B (zh) | 2012-07-11 |
KR101199994B1 (ko) | 2012-11-12 |
EP1575343B1 (en) | 2014-11-12 |
EP2259663A3 (en) | 2013-04-03 |
EP2259663A2 (en) | 2010-12-08 |
KR101090726B1 (ko) | 2011-12-08 |
US8444806B2 (en) | 2013-05-21 |
EP2259663B1 (en) | 2014-10-01 |
KR20110106949A (ko) | 2011-09-29 |
WO2004056159A1 (ja) | 2004-07-01 |
KR20110106948A (ko) | 2011-09-29 |
US20060049138A1 (en) | 2006-03-09 |
KR20110106947A (ko) | 2011-09-29 |
US20100304046A1 (en) | 2010-12-02 |
US7785441B2 (en) | 2010-08-31 |
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