SG89321A1 - Semiconductor laser and a manufacturing method for the same - Google Patents
Semiconductor laser and a manufacturing method for the sameInfo
- Publication number
- SG89321A1 SG89321A1 SG200001141A SG200001141A SG89321A1 SG 89321 A1 SG89321 A1 SG 89321A1 SG 200001141 A SG200001141 A SG 200001141A SG 200001141 A SG200001141 A SG 200001141A SG 89321 A1 SG89321 A1 SG 89321A1
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- same
- semiconductor laser
- laser
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
- H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2226—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semiconductors with a specific doping
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Head (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05502199A JP3521793B2 (ja) | 1999-03-03 | 1999-03-03 | 半導体レーザの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG89321A1 true SG89321A1 (en) | 2002-06-18 |
Family
ID=12987026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200001141A SG89321A1 (en) | 1999-03-03 | 2000-03-02 | Semiconductor laser and a manufacturing method for the same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6822989B1 (ja) |
| EP (1) | EP1033796B1 (ja) |
| JP (1) | JP3521793B2 (ja) |
| CN (1) | CN1266299A (ja) |
| DE (1) | DE60016486T2 (ja) |
| SG (1) | SG89321A1 (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6782023B2 (en) * | 2000-03-15 | 2004-08-24 | Rohm Co., Ltd. | Semiconductor laser |
| JP2002033553A (ja) * | 2000-07-18 | 2002-01-31 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
| JP2002374040A (ja) * | 2001-06-15 | 2002-12-26 | Sharp Corp | 半導体レーザ素子およびその製造方法 |
| US6977953B2 (en) * | 2001-07-27 | 2005-12-20 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device and method of fabricating the same |
| CN1259760C (zh) | 2001-08-31 | 2006-06-14 | 三井化学株式会社 | 半导体激光元件 |
| EP2259346B1 (en) * | 2008-03-27 | 2019-07-03 | LG Innotek Co., Ltd. | Light-emitting element and a production method therefor |
| JP2011091108A (ja) * | 2009-10-20 | 2011-05-06 | Sumitomo Electric Ind Ltd | 半導体レーザ |
| DE102020120703B4 (de) | 2020-08-05 | 2025-02-06 | Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik | Diodenlaser mit Stromblende |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0385388A2 (en) * | 1989-02-28 | 1990-09-05 | Omron Corporation | Ridge-waveguide semiconductor laser |
| EP0477013A2 (en) * | 1990-09-20 | 1992-03-25 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a semiconductor laser |
| US5395792A (en) * | 1993-06-02 | 1995-03-07 | Rohm Co., Ltd. | Process for fabricating a semiconductor laser device |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62108591A (ja) * | 1985-11-06 | 1987-05-19 | Hitachi Ltd | 半導体レ−ザの製造方法 |
| US4783425A (en) * | 1985-11-06 | 1988-11-08 | Hitachi, Ltd. | Fabrication process of semiconductor lasers |
| JPS62186582A (ja) | 1986-02-13 | 1987-08-14 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
| JPS62213189A (ja) * | 1986-03-14 | 1987-09-19 | Nec Corp | 半導体レ−ザ |
| JP2585230B2 (ja) * | 1986-09-16 | 1997-02-26 | 株式会社日立製作所 | 半導体レ−ザ装置 |
| JPH0812928B2 (ja) | 1988-12-06 | 1996-02-07 | 日本電気株式会社 | 半導体変調ドープ構造 |
| JPH0327584A (ja) * | 1989-07-14 | 1991-02-05 | Rohm Co Ltd | 半導体レーザの製造方法 |
| US5144633A (en) * | 1990-05-24 | 1992-09-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser and manufacturing method thereof |
| JPH04144185A (ja) * | 1990-10-04 | 1992-05-18 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JP2669139B2 (ja) | 1990-10-24 | 1997-10-27 | 日本電気株式会社 | 半導体レーザ |
| US5270246A (en) | 1991-06-18 | 1993-12-14 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method of semiconductor multi-layer film and semiconductor laser |
| JPH05175607A (ja) | 1991-06-18 | 1993-07-13 | Matsushita Electric Ind Co Ltd | 半導体多層膜の形成方法および半導体レーザの製造方法 |
| JPH05243667A (ja) * | 1992-02-27 | 1993-09-21 | Sanyo Electric Co Ltd | 半導体レーザ装置 |
| JP2975473B2 (ja) | 1992-03-06 | 1999-11-10 | シャープ株式会社 | 半導体レーザ素子 |
| US5471494A (en) * | 1992-04-08 | 1995-11-28 | Rohm Co., Ltd. | Method for selecting a self pulsating semiconductor laser |
| US5416790A (en) * | 1992-11-06 | 1995-05-16 | Sanyo Electric Co., Ltd. | Semiconductor laser with a self-sustained pulsation |
| JP2536713B2 (ja) | 1993-02-08 | 1996-09-18 | 日本電気株式会社 | ＡｌＧａＩｎＰ半導体レ―ザ素子 |
| US5646953A (en) * | 1994-04-06 | 1997-07-08 | Matsushita Electronics Corporation | Semiconductor laser device |
| US6072817A (en) * | 1995-03-31 | 2000-06-06 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and optical disk apparatus using the same |
| JPH098307A (ja) | 1995-06-26 | 1997-01-10 | Matsushita Electron Corp | 半導体装置 |
| JPH0983071A (ja) * | 1995-09-08 | 1997-03-28 | Rohm Co Ltd | 半導体レーザ |
| JP3830051B2 (ja) * | 1995-09-18 | 2006-10-04 | 株式会社 日立製作所 | 窒化物半導体基板の製造方法、窒化物半導体基板、光半導体装置の製造方法および光半導体装置 |
| DE69620456T2 (de) * | 1995-09-29 | 2002-11-14 | Matsushita Electric Industrial Co., Ltd. | Halbleiterlaser und optisches plattenspeichergerät unter verwendung dieses lasers |
| US6055255A (en) | 1996-02-01 | 2000-04-25 | Sharp Kabushiki Kaisha | Semiconductor laser device and method for producing the same |
| JPH09270563A (ja) | 1996-02-01 | 1997-10-14 | Sharp Corp | 半導体レーザ素子およびその製造方法 |
| JP3039365B2 (ja) | 1996-04-15 | 2000-05-08 | 日本電気株式会社 | 受信同期位置制御方式 |
| JPH1098233A (ja) * | 1996-09-25 | 1998-04-14 | Rohm Co Ltd | 半導体レーザおよびその製法 |
| JPH11354884A (ja) * | 1998-06-08 | 1999-12-24 | Sumitomo Electric Ind Ltd | 半導体レーザ及び半導体レーザの製造方法 |
| JP2000164938A (ja) * | 1998-11-27 | 2000-06-16 | Sharp Corp | 発光装置及び発光素子の実装方法 |
-
1999
- 1999-03-03 JP JP05502199A patent/JP3521793B2/ja not_active Expired - Fee Related
-
2000
- 2000-02-29 US US09/515,285 patent/US6822989B1/en not_active Expired - Fee Related
- 2000-02-29 EP EP00301629A patent/EP1033796B1/en not_active Expired - Lifetime
- 2000-02-29 DE DE60016486T patent/DE60016486T2/de not_active Expired - Fee Related
- 2000-03-02 SG SG200001141A patent/SG89321A1/en unknown
- 2000-03-03 CN CN00105394.9A patent/CN1266299A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0385388A2 (en) * | 1989-02-28 | 1990-09-05 | Omron Corporation | Ridge-waveguide semiconductor laser |
| EP0477013A2 (en) * | 1990-09-20 | 1992-03-25 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a semiconductor laser |
| US5395792A (en) * | 1993-06-02 | 1995-03-07 | Rohm Co., Ltd. | Process for fabricating a semiconductor laser device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1266299A (zh) | 2000-09-13 |
| EP1033796B1 (en) | 2004-12-08 |
| JP2000252586A (ja) | 2000-09-14 |
| JP3521793B2 (ja) | 2004-04-19 |
| EP1033796A2 (en) | 2000-09-06 |
| EP1033796A3 (en) | 2002-05-02 |
| DE60016486D1 (de) | 2005-01-13 |
| US6822989B1 (en) | 2004-11-23 |
| DE60016486T2 (de) | 2005-05-12 |
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