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SG118233A1 - Interconnect with composite barrier layers and method for fabricating the same - Google Patents

Interconnect with composite barrier layers and method for fabricating the same

Info

Publication number
SG118233A1
SG118233A1 SG200401636A SG200401636A SG118233A1 SG 118233 A1 SG118233 A1 SG 118233A1 SG 200401636 A SG200401636 A SG 200401636A SG 200401636 A SG200401636 A SG 200401636A SG 118233 A1 SG118233 A1 SG 118233A1
Authority
SG
Singapore
Prior art keywords
fabricating
interconnect
same
barrier layers
composite barrier
Prior art date
Application number
SG200401636A
Other languages
English (en)
Inventor
Yu Chen-Hua
Tseng Horng-Huei
Jang Syun-Ming
Hu Chenming
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG118233A1 publication Critical patent/SG118233A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG200401636A 2003-09-04 2004-03-25 Interconnect with composite barrier layers and method for fabricating the same SG118233A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/654,757 US6958291B2 (en) 2003-09-04 2003-09-04 Interconnect with composite barrier layers and method for fabricating the same

Publications (1)

Publication Number Publication Date
SG118233A1 true SG118233A1 (en) 2006-01-27

Family

ID=34226011

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200401636A SG118233A1 (en) 2003-09-04 2004-03-25 Interconnect with composite barrier layers and method for fabricating the same

Country Status (4)

Country Link
US (2) US6958291B2 (zh)
CN (2) CN1591856A (zh)
SG (1) SG118233A1 (zh)
TW (1) TWI235454B (zh)

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US20170170114A1 (en) * 2015-12-15 2017-06-15 Lam Research Corporation Multilayer film including a tantalum and titanium alloy as a scalable barrier diffusion layer for copper interconnects
US9870987B2 (en) * 2016-02-29 2018-01-16 Toshiba Memory Corporation Semiconductor device and method of manufacturing the same
US10804464B2 (en) * 2017-11-24 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming memory device with diffusion barrier and capping layer
US10381307B1 (en) * 2018-05-14 2019-08-13 Nanya Technology Corporation Method of forming barrier layer over via, and via structure formed thereof
CN109103139B (zh) * 2018-08-14 2020-11-20 上海华虹宏力半导体制造有限公司 半导体通孔的制造方法
CN110998848A (zh) * 2019-11-26 2020-04-10 重庆康佳光电技术研究院有限公司 一种光阻剥离液的隔离结构、tft阵列及其制备方法
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Also Published As

Publication number Publication date
CN1591856A (zh) 2005-03-09
TW200511497A (en) 2005-03-16
CN2720637Y (zh) 2005-08-24
US7265447B2 (en) 2007-09-04
US20050054191A1 (en) 2005-03-10
US6958291B2 (en) 2005-10-25
TWI235454B (en) 2005-07-01
US20060027932A1 (en) 2006-02-09

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