[go: up one dir, main page]

SG11201606813TA - Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting - Google Patents

Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting

Info

Publication number
SG11201606813TA
SG11201606813TA SG11201606813TA SG11201606813TA SG11201606813TA SG 11201606813T A SG11201606813T A SG 11201606813TA SG 11201606813T A SG11201606813T A SG 11201606813TA SG 11201606813T A SG11201606813T A SG 11201606813TA SG 11201606813T A SG11201606813T A SG 11201606813TA
Authority
SG
Singapore
Prior art keywords
nanoimprinting
lithography
template
mask
semiconductor device
Prior art date
Application number
SG11201606813TA
Inventor
Seiji Nagahara
Seiichi Tagawa
Akihiro Oshima
Original Assignee
Tokyo Electron Ltd
Univ Osaka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Univ Osaka filed Critical Tokyo Electron Ltd
Publication of SG11201606813TA publication Critical patent/SG11201606813TA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C303/00—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
    • C07C303/32—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of salts of sulfonic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/14—Methyl esters, e.g. methyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/38—Esters containing sulfur
    • C08F220/382—Esters containing sulfur and containing oxygen, e.g. 2-sulfoethyl (meth)acrylate

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
SG11201606813TA 2014-02-21 2015-02-17 Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting SG11201606813TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014032281 2014-02-21
PCT/JP2015/054325 WO2015125788A1 (en) 2014-02-21 2015-02-17 Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting
JP2015028423A JP6364361B2 (en) 2014-02-21 2015-02-17 Photosensitized chemically amplified resist material, pattern forming method using the same, semiconductor device, lithography mask, and nanoimprint template manufacturing method

Publications (1)

Publication Number Publication Date
SG11201606813TA true SG11201606813TA (en) 2016-09-29

Family

ID=53878290

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606813TA SG11201606813TA (en) 2014-02-21 2015-02-17 Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting

Country Status (7)

Country Link
US (1) US10025187B2 (en)
JP (1) JP6364361B2 (en)
KR (1) KR102357133B1 (en)
CN (2) CN106030417B (en)
SG (1) SG11201606813TA (en)
TW (1) TWI600966B (en)
WO (1) WO2015125788A1 (en)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101845188B1 (en) * 2014-02-24 2018-04-03 도쿄엘렉트론가부시키가이샤 Mitigation of euv shot noise replicating into acid shot noise in photo-sensitized chemically-amplified resist
JP6283120B2 (en) * 2014-02-24 2018-02-21 東京エレクトロン株式会社 Metrology of photosensitizer concentration in photosensitized chemically amplified resists
TWI575566B (en) 2014-02-24 2017-03-21 東京威力科創股份有限公司 Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes
DE112015000546T5 (en) 2014-02-25 2016-11-10 Tokyo Electron Limited Chemical amplification techniques and methods for developable bottom antireflective coatings and stained implant resists
KR101924710B1 (en) * 2014-05-21 2018-12-03 오사카 유니버시티 Resist pattern formation method, resist latent image formation device, and resist material
JP6774814B2 (en) 2015-08-20 2020-10-28 国立大学法人大阪大学 Chemically amplified resist material and pattern forming method
JP6512994B2 (en) * 2015-08-20 2019-05-15 国立大学法人大阪大学 Chemically amplified resist material
JP6809843B2 (en) 2015-08-20 2021-01-06 国立大学法人大阪大学 Pattern formation method
US20170059992A1 (en) * 2015-08-26 2017-03-02 Jsr Corporation Resist pattern-forming method and chemically amplified radiation-sensitive resin composition
KR20170031053A (en) * 2015-09-10 2017-03-20 제이에스알 가부시끼가이샤 Process for forming resist pattern
JP6507958B2 (en) 2015-09-10 2019-05-08 Jsr株式会社 Chemically amplified resist material and resist pattern forming method
US9989849B2 (en) 2015-11-09 2018-06-05 Jsr Corporation Chemically amplified resist material and resist pattern-forming method
US10018911B2 (en) 2015-11-09 2018-07-10 Jsr Corporation Chemically amplified resist material and resist pattern-forming method
KR20170054298A (en) * 2015-11-09 2017-05-17 제이에스알 가부시끼가이샤 Chemically amplified resist material and process for forming resist pattern
KR102170659B1 (en) * 2015-11-25 2020-10-27 오사카 유니버시티 Resist pattern formation method and resist material
KR101663264B1 (en) * 2015-11-30 2016-10-10 주식회사 삼양사 Anhydrosugar alcohol composition with improved storage stability and method for storing anhydrosugar alcohols
KR101663255B1 (en) * 2015-11-30 2016-10-10 주식회사 삼양사 Composition for preparing concentrated anhydrosugar alcohol with improved stability and method for concentrating anhydrosugar alcohols
US11104057B2 (en) * 2015-12-11 2021-08-31 Canon Kabushiki Kaisha Imprint apparatus and method of imprinting a partial field
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
JP2017173420A (en) * 2016-03-22 2017-09-28 Jsr株式会社 Radiation-sensitive composition and pattern formation method
CN109313389B (en) * 2016-03-30 2020-07-14 日产化学株式会社 Resist underlayer film forming composition containing compound having glycoluril skeleton as additive
KR102475021B1 (en) 2016-05-13 2022-12-06 도쿄엘렉트론가부시키가이샤 Critical dimension control by use of photosensitive chemicals or photosensitive chemically amplified resists
KR102177192B1 (en) 2016-05-13 2020-11-10 도쿄엘렉트론가부시키가이샤 Critical dimension control by the use of light agents
JP2019168475A (en) * 2016-08-08 2019-10-03 Jsr株式会社 Chemical amplification type resist material and resist pattern formation method
JP6847121B2 (en) * 2016-10-17 2021-03-24 東洋合成工業株式会社 Composition and manufacturing method of device using it
JP6885031B2 (en) * 2016-11-18 2021-06-09 東京エレクトロン株式会社 Exposure device, exposure method and storage medium
US10042252B2 (en) * 2016-11-30 2018-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet photoresist and method
US10520813B2 (en) * 2016-12-15 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd Extreme ultraviolet photoresist with high-efficiency electron transfer
US10527935B2 (en) * 2016-12-31 2020-01-07 Rohm And Haas Electronic Materials Llc Radiation-sensitive compositions and patterning and metallization processes
JPWO2018180308A1 (en) * 2017-03-28 2020-02-06 Jsr株式会社 Chemically amplified resist material and resist pattern forming method
KR102678974B1 (en) * 2017-09-22 2024-06-26 도쿄엘렉트론가부시키가이샤 Method for imparting photosensitivity to photoresist using flood exposure
TWI783115B (en) * 2018-02-14 2022-11-11 日商富士軟片股份有限公司 Kit, composition for forming underlayer film for imprint, method for forming pattern, method for manufacturing semiconductor device
JP7079647B2 (en) * 2018-04-17 2022-06-02 東洋合成工業株式会社 A method for manufacturing a composition and a device using the composition.
JP6933605B2 (en) * 2018-05-21 2021-09-08 信越化学工業株式会社 Pattern formation method
JP6875325B2 (en) * 2018-05-21 2021-05-19 信越化学工業株式会社 Pattern formation method
KR102264694B1 (en) * 2018-06-11 2021-06-11 삼성에스디아이 주식회사 Polymer cross-linking agent, resist underlayer composition comprising thereof, and method of forming patterns using the composition
US11796919B2 (en) 2018-06-14 2023-10-24 Osaka University Resist pattern formation method
KR20210065928A (en) 2018-07-19 2021-06-04 린트필드 리미티드 Thioxanthone derivatives, composition comprising same, and pattern forming method comprising the composition｛Thioxanthone derivatives, composition comprising the same and pattern forming method comprising said composition｝
JP7220229B2 (en) * 2018-09-26 2023-02-09 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, electronic device manufacturing method
JP7205419B2 (en) * 2018-09-28 2023-01-17 信越化学工業株式会社 ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMATION METHOD
WO2020123021A2 (en) * 2018-10-17 2020-06-18 The University Of Chicago Photosensitive, inorganic ligand-capped inorganic nanocrystals
US11921427B2 (en) 2018-11-14 2024-03-05 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
JP7438716B2 (en) * 2018-11-14 2024-02-27 住友化学株式会社 Salt, acid generator, resist composition, and method for producing resist pattern
KR102731166B1 (en) 2018-12-20 2024-11-18 램 리써치 코포레이션 Dry development of resists
JP6640397B1 (en) * 2019-03-22 2020-02-05 東京応化工業株式会社 Solution, method of forming resist pattern, and method of manufacturing semiconductor device
TWI869221B (en) 2019-06-26 2025-01-01 美商蘭姆研究公司 Photoresist development with halide chemistries
KR20220046598A (en) * 2019-08-16 2022-04-14 도쿄엘렉트론가부시키가이샤 Methods and Processes for Probability-Based Defect Correction
KR102094286B1 (en) * 2019-09-30 2020-03-27 백운석 Chemical amplification type negative photoresist composition
TWI833992B (en) * 2019-10-15 2024-03-01 美商羅門哈斯電子材料有限公司 Photoresist compositions and pattern formation methods
CN114200776A (en) 2020-01-15 2022-03-18 朗姆研究公司 Underlayer for photoresist adhesion and dose reduction
GB202000736D0 (en) 2020-01-17 2020-03-04 Lintfield Ltd Modified thioxanthone photoinitators
US20240192590A1 (en) * 2020-03-31 2024-06-13 Lam Research Corporation Apparatus and process for euv dry resist sensitization by gas phase infusion of a sensitizer
KR20220122745A (en) 2020-07-07 2022-09-02 램 리써치 코포레이션 Integrated dry process for patterning radiation photoresist patterning
CN111948904B (en) * 2020-08-13 2022-04-01 常州华睿芯材科技有限公司 Photoresist composition, method for forming photolithographic pattern using the same, and use thereof
JPWO2022196258A1 (en) * 2021-03-15 2022-09-22
WO2024038802A1 (en) 2022-08-15 2024-02-22 富士フイルム株式会社 Active light-sensitive or radiation-sensitive resin composition, resist film, method for forming pattern, and method for producing electronic device

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5531453B2 (en) * 1973-06-21 1980-08-18
JPS542720A (en) * 1977-06-08 1979-01-10 Konishiroku Photo Ind Co Ltd Forming method of photopolymerized image
US5015559A (en) * 1988-07-26 1991-05-14 Matsushita Electric Industrial Co., Ltd. Process for forming a fine resist pattern
JPH04151156A (en) 1990-06-19 1992-05-25 Mitsubishi Electric Corp Photosensitive resin composition
JPH0481765A (en) * 1990-07-24 1992-03-16 Sony Corp Pattern forming method for chemical amplification type resist
JP3222459B2 (en) 1990-10-26 2001-10-29 ローム アンド ハース カンパニー Positive photoresist composition
JP3042701B2 (en) * 1990-10-30 2000-05-22 株式会社日立製作所 Pattern formation method
JP2931143B2 (en) 1991-04-15 1999-08-09 日東電工株式会社 Heat-resistant positive photoresist composition, photosensitive substrate using the same, and pattern forming method
DE4112970A1 (en) * 1991-04-20 1992-10-22 Hoechst Ag Acid-cleavable radiation-sensitive compounds, the radiation-sensitive mixture containing them and radiation radiation-sensitive material made from them
US5206117A (en) 1991-08-14 1993-04-27 Labadie Jeffrey W Photosensitive polyamic alkyl ester composition and process for its use
US5296332A (en) * 1991-11-22 1994-03-22 International Business Machines Corporation Crosslinkable aqueous developable photoresist compositions and method for use thereof
JP3148426B2 (en) 1992-12-25 2001-03-19 クラリアント インターナショナル リミテッド Material for pattern formation
JP3194645B2 (en) * 1993-03-18 2001-07-30 富士写真フイルム株式会社 Positive photosensitive composition
DE69408709T2 (en) 1993-04-28 1998-10-01 Hitachi Chemical Co Ltd Photosensitive resin composition
JPH08146608A (en) 1994-11-16 1996-06-07 Hitachi Ltd Photosensitive resin composition and method of manufacturing electronic device using the same
JP3514590B2 (en) 1996-09-06 2004-03-31 信越化学工業株式会社 Chemically amplified positive resist material
JPH11160876A (en) * 1997-11-26 1999-06-18 Mitsubishi Chemical Corp Positive radiation sensitive resin composition
JP2001042531A (en) * 1999-07-26 2001-02-16 Fuji Photo Film Co Ltd Positive type radiation sensitive resin composition
JP2002174894A (en) 2000-12-07 2002-06-21 Fuji Photo Film Co Ltd Positive type resist composition for electron beam or x- ray
JP2002311586A (en) * 2001-04-18 2002-10-23 Fuji Photo Film Co Ltd Negative type resist composition for electron beam or x-ray
TWI300516B (en) * 2001-07-24 2008-09-01 Jsr Corp
CN1517794A (en) * 2003-01-17 2004-08-04 三菱瓦斯化学株式会社 resist composition
JP2006039129A (en) * 2004-07-26 2006-02-09 Sony Corp Laminated structure for liquid immersion exposure, liquid immersion exposure method, manufacturing method of electronic device, and electronic device
US20060269879A1 (en) * 2005-05-24 2006-11-30 Infineon Technologies Ag Method and apparatus for a post exposure bake of a resist
JP5055743B2 (en) * 2005-11-04 2012-10-24 セントラル硝子株式会社 A fluorine-containing polymer coating composition, a method for forming a fluorine-containing polymer film using the coating composition, and a method for forming a photoresist or a lithography pattern.
JP5347433B2 (en) * 2007-11-01 2013-11-20 セントラル硝子株式会社 Novel sulfonate and derivative thereof, photoacid generator, resist material and pattern forming method using the same
RU2472351C2 (en) * 2008-05-15 2013-01-20 Лодерс Кроклан Б.В. Phospholipase d production method
KR101054485B1 (en) * 2008-09-23 2011-08-04 금호석유화학 주식회사 Onium salt compound, a polymer compound comprising the same, a chemically amplified resist composition comprising the polymer compound and a pattern forming method using the composition
JP5544098B2 (en) * 2008-09-26 2014-07-09 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, and pattern formation method using the photosensitive composition
JP5225815B2 (en) * 2008-11-19 2013-07-03 東京エレクトロン株式会社 Interface device, method for transporting substrate, and computer-readable storage medium
JP5421585B2 (en) * 2008-12-24 2014-02-19 旭化成イーマテリアルズ株式会社 Photosensitive resin composition
US8124326B2 (en) * 2009-03-03 2012-02-28 Micron Technology, Inc. Methods of patterning positive photoresist
JP5359430B2 (en) 2009-03-19 2013-12-04 凸版印刷株式会社 Pattern forming method, imprint mold and photomask
WO2012033138A1 (en) * 2010-09-09 2012-03-15 Jsr株式会社 Radiation-sensitive resin composition, polymer, and compound
JP2012136507A (en) * 2010-11-15 2012-07-19 Rohm & Haas Electronic Materials Llc Base reactive photoacid generator and photoresist comprising the same
JP5673038B2 (en) * 2010-12-01 2015-02-18 Jsr株式会社 Radiation sensitive resin composition and pattern forming method using the same
JP5668710B2 (en) * 2012-02-27 2015-02-12 信越化学工業株式会社 POLYMER COMPOUND, RESIST MATERIAL CONTAINING SAME, PATTERN FORMING METHOD, AND METHOD FOR PRODUCING THE POLYMER COMPOUND
JP5949094B2 (en) * 2012-04-25 2016-07-06 Jsr株式会社 Positive radiation-sensitive composition, interlayer insulating film for display element, and method for forming the same
JP6006999B2 (en) * 2012-06-20 2016-10-12 東京応化工業株式会社 Resist composition and resist pattern forming method
TWI567788B (en) * 2013-02-20 2017-01-21 國立大學法人大阪大學 Resist pattern forming method, resist latent image forming apparatus, resist pattern forming apparatus, and resist material
JP6287369B2 (en) * 2013-03-08 2018-03-07 Jsr株式会社 Photoresist composition, resist pattern forming method, compound, and polymer
JP6244109B2 (en) * 2013-05-31 2017-12-06 東京応化工業株式会社 Resist composition, compound, polymer compound, and resist pattern forming method
JP6240409B2 (en) * 2013-05-31 2017-11-29 サンアプロ株式会社 Sulfonium salt and photoacid generator
JP6221939B2 (en) * 2013-06-19 2017-11-01 信越化学工業株式会社 Developer for photosensitive resist material and pattern forming method using the same
WO2014208076A1 (en) * 2013-06-24 2014-12-31 Toyo Gosei Co., Ltd. Reagent for enhancing generation of chemical species
WO2014208102A1 (en) * 2013-06-27 2014-12-31 Toyo Gosei Co., Ltd. Reagent for Enhancing Generation of Chemical Species
WO2015019616A1 (en) * 2013-08-07 2015-02-12 Toyo Gosei Co., Ltd. Reagent for enhancing generation of chemical species
JP5904180B2 (en) * 2013-09-11 2016-04-13 信越化学工業株式会社 Sulfonium salt, chemically amplified resist composition, and pattern forming method
US9575408B2 (en) * 2015-01-07 2017-02-21 Sumitomo Chemical Company, Limited Photoresist composition and method for producing photoresist pattern
JP6515831B2 (en) * 2015-02-25 2019-05-22 信越化学工業株式会社 Chemically amplified positive resist composition and method for forming resist pattern

Also Published As

Publication number Publication date
CN106030417A (en) 2016-10-12
TW201537289A (en) 2015-10-01
KR20160124769A (en) 2016-10-28
TWI600966B (en) 2017-10-01
CN111562720B (en) 2023-09-29
JP2015172741A (en) 2015-10-01
KR102357133B1 (en) 2022-01-28
CN106030417B (en) 2020-02-28
US10025187B2 (en) 2018-07-17
US20160357103A1 (en) 2016-12-08
CN111562720A (en) 2020-08-21
JP6364361B2 (en) 2018-07-25
WO2015125788A1 (en) 2015-08-27

Similar Documents

Publication Publication Date Title
SG11201606813TA (en) Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting
IL253109A0 (en) Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method
SG11201607444VA (en) Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying the compound or resin
EP3098834A4 (en) Exposure device, method for forming resist pattern, and storage medium
IL246161A0 (en) Inspection method, lithographic apparatus, mask and substrate
SG10201407188WA (en) Halftone Phase Shift Photomask Blank, Halftone Phase Shift Photomask And Pattern Exposure Method
SG11201609095VA (en) Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method
SG11201607443XA (en) Resist composition and method for forming resist pattern
IL246965B (en) Metrology method and apparatus, substrate, lithographic system and device manufacturing method
EP3229075A4 (en) Photoresist composition, method for manufacturing same, and method for forming resist pattern
EP3133442A4 (en) Pellicle film, pellicle, exposure master, exposure device, and method for manufacturing semiconductor device
SG11201701805QA (en) Pellicle, production method thereof, exposure method
SG11201701802SA (en) Pellicle, pellicle production method and exposure method using pellicle
IL264266A (en) Lithographic apparatus, lithographic projection apparatus and device manufacturing method
EP2955175A4 (en) Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern formation method
SG11201608777TA (en) Pellicle frame, pellicle and method of manufacturing the same,original plate for exposure and method of manufacturing thesame, exposure device, and method of manufacturingsemiconductor device
IL254447A0 (en) Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin
SG11201705165QA (en) Photomask blank, method for manufacturing photomask, and mask pattern formation method
IL254323A0 (en) Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin
SG11201706306SA (en) Compound, resist composition, and method for forming resist pattern using it
SG10201602448YA (en) Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask, And Pattern Exposure Method
IL240732A0 (en) Composition for forming fine resist pattern, and pattern formation method using same
SG11201707780TA (en) Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
EP2955577A4 (en) Compound, material for forming underlayer film for lithography, underlayer film for lithography, and pattern formation method
IL240745B (en) Fine resist pattern-forming composition and pattern forming method using same