SG11201607443XA - Resist composition and method for forming resist pattern - Google Patents
Resist composition and method for forming resist patternInfo
- Publication number
- SG11201607443XA SG11201607443XA SG11201607443XA SG11201607443XA SG11201607443XA SG 11201607443X A SG11201607443X A SG 11201607443XA SG 11201607443X A SG11201607443X A SG 11201607443XA SG 11201607443X A SG11201607443X A SG 11201607443XA SG 11201607443X A SG11201607443X A SG 11201607443XA
- Authority
- SG
- Singapore
- Prior art keywords
- resist
- forming
- resist pattern
- composition
- resist composition
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C39/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
- C07C39/12—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
- C07C39/15—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings with all hydroxy groups on non-condensed rings, e.g. phenylphenol
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
- G03F7/327—Non-aqueous alkaline compositions, e.g. anhydrous quaternary ammonium salts
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014050767 | 2014-03-13 | ||
| PCT/JP2015/057470 WO2015137485A1 (en) | 2014-03-13 | 2015-03-13 | Resist composition and method for forming resist pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201607443XA true SG11201607443XA (en) | 2016-10-28 |
Family
ID=54071921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201607443XA SG11201607443XA (en) | 2014-03-13 | 2015-03-13 | Resist composition and method for forming resist pattern |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10303055B2 (en) |
| EP (1) | EP3118684B1 (en) |
| JP (1) | JP6515919B2 (en) |
| KR (1) | KR102326848B1 (en) |
| CN (1) | CN106133604B (en) |
| SG (1) | SG11201607443XA (en) |
| TW (1) | TWI662018B (en) |
| WO (1) | WO2015137485A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10294183B2 (en) | 2014-03-13 | 2019-05-21 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying the compound or resin |
| US10642156B2 (en) | 2015-03-30 | 2020-05-05 | Mitsubishi Gas Chemical Company, Inc. | Resist base material, resist composition and method for forming resist pattern |
| US10747112B2 (en) | 2015-03-30 | 2020-08-18 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method |
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| KR102326848B1 (en) | 2014-03-13 | 2021-11-17 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | Resist composition and method for forming resist pattern |
| SG11201705038XA (en) | 2014-12-25 | 2017-07-28 | Mitsubishi Gas Chemical Co | Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method |
| US20180029968A1 (en) * | 2015-02-12 | 2018-02-01 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, resist pattern forming method, circuit pattern forming method, and purification method of compound or resin |
| SG11201706524WA (en) * | 2015-03-06 | 2017-09-28 | Mitsubishi Gas Chemical Co | Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin |
| WO2016158456A1 (en) * | 2015-03-30 | 2016-10-06 | 三菱瓦斯化学株式会社 | Radiation-sensitive composition, amorphous film, and resist pattern-formation method |
| KR102562846B1 (en) | 2015-03-31 | 2023-08-02 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | Resist composition, resist pattern formation method, and polyphenol compound used therein |
| CN107533291B (en) | 2015-03-31 | 2021-06-11 | 三菱瓦斯化学株式会社 | Compound, resist composition, and resist pattern formation method using same |
| SG11201707780TA (en) | 2015-04-07 | 2017-10-30 | Mitsubishi Gas Chemical Co | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method |
| EP3346335A4 (en) | 2015-08-31 | 2019-06-26 | Mitsubishi Gas Chemical Company, Inc. | Material for forming underlayer films for lithography, composition for forming underlayer films for lithography, underlayer film for lithography and method for producing same, pattern forming method, resin, and purification method |
| US11137686B2 (en) | 2015-08-31 | 2021-10-05 | Mitsubishi Gas Chemical Company, Inc. | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method |
| EP3348542A4 (en) | 2015-09-10 | 2019-04-03 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, resist composition or radiation-sensitive composition, method for forming resist pattern, method for producing amorphous film, material for forming lithographic underlayer film, compostion for forming lithographic underlayer film, method for forming circuit pattern, and purification method |
| JP6877696B2 (en) * | 2015-12-25 | 2021-05-26 | 三菱瓦斯化学株式会社 | Compounds, resins, compositions, resist pattern forming methods, and circuit pattern forming methods |
| JP7452947B2 (en) * | 2016-09-13 | 2024-03-19 | 三菱瓦斯化学株式会社 | Compounds, resins, compositions, resist pattern forming methods, and circuit pattern forming methods |
| JP6896233B2 (en) * | 2016-09-13 | 2021-06-30 | 三菱瓦斯化学株式会社 | Optical member forming composition |
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| WO2018155495A1 (en) * | 2017-02-23 | 2018-08-30 | 三菱瓦斯化学株式会社 | Compound, resin, composition, pattern forming method and purification method |
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| CN104557552B (en) | 2013-10-22 | 2016-08-31 | 中国科学院理化技术研究所 | Star-shaped tetraphenylethylene derivative molecular glass, positive photoresist coating and application thereof |
| KR102318654B1 (en) * | 2014-03-13 | 2021-10-28 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | Compound, resin, base layer film-forming material for lithography, base layer film for lithography, pattern-forming method, and method for refining compound or resin |
| KR102326848B1 (en) | 2014-03-13 | 2021-11-17 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | Resist composition and method for forming resist pattern |
| SG11201705038XA (en) | 2014-12-25 | 2017-07-28 | Mitsubishi Gas Chemical Co | Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method |
| US20180029968A1 (en) | 2015-02-12 | 2018-02-01 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, resist pattern forming method, circuit pattern forming method, and purification method of compound or resin |
| SG11201706524WA (en) | 2015-03-06 | 2017-09-28 | Mitsubishi Gas Chemical Co | Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin |
| WO2016158456A1 (en) * | 2015-03-30 | 2016-10-06 | 三菱瓦斯化学株式会社 | Radiation-sensitive composition, amorphous film, and resist pattern-formation method |
| CN107533290B (en) | 2015-03-30 | 2021-04-09 | 三菱瓦斯化学株式会社 | Resist base material, resist composition, and method for forming resist pattern |
| SG11201707780TA (en) * | 2015-04-07 | 2017-10-30 | Mitsubishi Gas Chemical Co | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method |
| US11067889B2 (en) * | 2015-09-03 | 2021-07-20 | Mitsubishi Gas Chemical Company, Inc. | Compound, composition, and method for producing same, underlayer film forming material for lithography, composition for underlayer film formation for lithography, and purification method |
| EP3348542A4 (en) * | 2015-09-10 | 2019-04-03 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, resist composition or radiation-sensitive composition, method for forming resist pattern, method for producing amorphous film, material for forming lithographic underlayer film, compostion for forming lithographic underlayer film, method for forming circuit pattern, and purification method |
-
2015
- 2015-03-13 KR KR1020167025311A patent/KR102326848B1/en active Active
- 2015-03-13 US US15/125,463 patent/US10303055B2/en active Active
- 2015-03-13 TW TW104108135A patent/TWI662018B/en not_active IP Right Cessation
- 2015-03-13 WO PCT/JP2015/057470 patent/WO2015137485A1/en active Application Filing
- 2015-03-13 CN CN201580013887.0A patent/CN106133604B/en not_active Expired - Fee Related
- 2015-03-13 JP JP2016507845A patent/JP6515919B2/en active Active
- 2015-03-13 SG SG11201607443XA patent/SG11201607443XA/en unknown
- 2015-03-13 EP EP15762188.9A patent/EP3118684B1/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10294183B2 (en) | 2014-03-13 | 2019-05-21 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying the compound or resin |
| US10642156B2 (en) | 2015-03-30 | 2020-05-05 | Mitsubishi Gas Chemical Company, Inc. | Resist base material, resist composition and method for forming resist pattern |
| US10747112B2 (en) | 2015-03-30 | 2020-08-18 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106133604A (en) | 2016-11-16 |
| WO2015137485A1 (en) | 2015-09-17 |
| KR20160134678A (en) | 2016-11-23 |
| US10303055B2 (en) | 2019-05-28 |
| JP6515919B2 (en) | 2019-05-22 |
| TWI662018B (en) | 2019-06-11 |
| CN106133604B (en) | 2019-09-06 |
| EP3118684A4 (en) | 2017-11-29 |
| TW201600504A (en) | 2016-01-01 |
| KR102326848B1 (en) | 2021-11-17 |
| EP3118684B1 (en) | 2019-07-24 |
| US20170075220A1 (en) | 2017-03-16 |
| EP3118684A1 (en) | 2017-01-18 |
| JPWO2015137485A1 (en) | 2017-04-06 |
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