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SG11201706524WA - Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin - Google Patents

Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin

Info

Publication number
SG11201706524WA
SG11201706524WA SG11201706524WA SG11201706524WA SG11201706524WA SG 11201706524W A SG11201706524W A SG 11201706524WA SG 11201706524W A SG11201706524W A SG 11201706524WA SG 11201706524W A SG11201706524W A SG 11201706524WA SG 11201706524W A SG11201706524W A SG 11201706524WA
Authority
SG
Singapore
Prior art keywords
lithography
resin
underlayer film
compound
forming
Prior art date
Application number
SG11201706524WA
Inventor
Junya Horiuchi
Masatoshi Echigo
Takashi Makinoshima
Original Assignee
Mitsubishi Gas Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co filed Critical Mitsubishi Gas Chemical Co
Publication of SG11201706524WA publication Critical patent/SG11201706524WA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C39/00Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
    • C07C39/12Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
    • C07C39/15Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings with all hydroxy groups on non-condensed rings, e.g. phenylphenol
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C37/00Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
    • C07C37/11Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms
    • C07C37/20Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms using aldehydes or ketones
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C37/00Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
    • C07C37/68Purification; separation; Use of additives, e.g. for stabilisation
    • C07C37/70Purification; separation; Use of additives, e.g. for stabilisation by physical treatment
    • C07C37/72Purification; separation; Use of additives, e.g. for stabilisation by physical treatment by liquid-liquid treatment
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/02Condensation polymers of aldehydes or ketones with phenols only of ketones
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/20Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/04Condensation polymers of aldehydes or ketones with phenols only
    • C09D161/06Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C09D161/12Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols with polyhydric phenols
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094Multilayer resist systems, e.g. planarising layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
SG11201706524WA 2015-03-06 2016-03-02 Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin SG11201706524WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015045223 2015-03-06
PCT/JP2016/056449 WO2016143635A1 (en) 2015-03-06 2016-03-02 Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin

Publications (1)

Publication Number Publication Date
SG11201706524WA true SG11201706524WA (en) 2017-09-28

Family

ID=56879466

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201706524WA SG11201706524WA (en) 2015-03-06 2016-03-02 Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin

Country Status (9)

Country Link
US (1) US20180044270A1 (en)
EP (1) EP3266759B1 (en)
JP (1) JP6781959B2 (en)
KR (1) KR102552910B1 (en)
CN (1) CN107531597A (en)
IL (1) IL254323A0 (en)
SG (1) SG11201706524WA (en)
TW (1) TWI762440B (en)
WO (1) WO2016143635A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102318654B1 (en) 2014-03-13 2021-10-28 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 Compound, resin, base layer film-forming material for lithography, base layer film for lithography, pattern-forming method, and method for refining compound or resin
KR102326848B1 (en) 2014-03-13 2021-11-17 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 Resist composition and method for forming resist pattern
US10747112B2 (en) 2015-03-30 2020-08-18 Mitsubishi Gas Chemical Company, Inc. Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method
CN107533290B (en) 2015-03-30 2021-04-09 三菱瓦斯化学株式会社 Resist base material, resist composition, and method for forming resist pattern
JP6489289B2 (en) * 2016-11-11 2019-03-27 住友ベークライト株式会社 Photosensitive resin composition for resist formation, resin film, cured film, and semiconductor device
US20200002307A1 (en) * 2017-02-28 2020-01-02 Mitsubishi Gas Chemical Company, Inc. Method for purifying compound or resin and method for producing composition
US11169441B2 (en) 2017-07-14 2021-11-09 Nissan Chemical Corporation Composition for forming resist underlayer film, resist underlayer film, method for forming resist pattern and method for producing semiconductor device
CN112513737B (en) * 2018-07-31 2024-11-15 三菱瓦斯化学株式会社 Lower film forming composition
KR102260811B1 (en) 2018-12-26 2021-06-03 삼성에스디아이 주식회사 Hardmask composition, hardmask layer and method of forming patterns
JP2020176109A (en) * 2019-04-22 2020-10-29 三菱ケミカル株式会社 Method for producing bisphenol compound

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JP3052449B2 (en) * 1991-07-17 2000-06-12 住友化学工業株式会社 Method for reducing metal in resist
US6660811B2 (en) * 2001-01-30 2003-12-09 Dainippon Ink And Chemicals, Inc. Epoxy resin composition and curing product thereof
JP3774668B2 (en) 2001-02-07 2006-05-17 東京エレクトロン株式会社 Cleaning pretreatment method for silicon nitride film forming apparatus
JP3914493B2 (en) 2002-11-27 2007-05-16 東京応化工業株式会社 Underlayer film forming material for multilayer resist process and wiring forming method using the same
KR100771800B1 (en) 2003-01-24 2007-10-30 도쿄 엘렉트론 가부시키가이샤 Method of cvd for forming silicon nitride film on substrate
JP3981030B2 (en) 2003-03-07 2007-09-26 信越化学工業株式会社 Resist underlayer film material and pattern forming method
JP4388429B2 (en) 2004-02-04 2009-12-24 信越化学工業株式会社 Resist underlayer film material and pattern forming method
JP4781280B2 (en) 2006-01-25 2011-09-28 信越化学工業株式会社 Antireflection film material, substrate, and pattern forming method
JP4638380B2 (en) 2006-01-27 2011-02-23 信越化学工業株式会社 Antireflection film material, substrate having antireflection film, and pattern forming method
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EP2479198B1 (en) 2009-09-15 2016-02-17 Mitsubishi Gas Chemical Company, Inc. Aromatic hydrocarbon resin and composition for forming underlayer film for lithography
KR101912677B1 (en) * 2012-08-10 2018-10-29 닛산 가가쿠 가부시키가이샤 Composition for forming resist underlayer film
KR102004697B1 (en) * 2013-04-17 2019-07-29 닛산 가가쿠 가부시키가이샤 Composition for forming resist underlayer film
JP6119983B2 (en) * 2013-06-28 2017-04-26 日産化学工業株式会社 Composition for forming resist upper layer film for lithography and method for manufacturing semiconductor device using the same
KR102318654B1 (en) * 2014-03-13 2021-10-28 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 Compound, resin, base layer film-forming material for lithography, base layer film for lithography, pattern-forming method, and method for refining compound or resin
KR102326848B1 (en) * 2014-03-13 2021-11-17 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 Resist composition and method for forming resist pattern
US20180029968A1 (en) * 2015-02-12 2018-02-01 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, resist pattern forming method, circuit pattern forming method, and purification method of compound or resin

Also Published As

Publication number Publication date
IL254323A0 (en) 2017-11-30
KR20170127489A (en) 2017-11-21
WO2016143635A1 (en) 2016-09-15
KR102552910B1 (en) 2023-07-10
TW201638061A (en) 2016-11-01
EP3266759B1 (en) 2023-09-13
CN107531597A (en) 2018-01-02
JP6781959B2 (en) 2020-11-11
EP3266759A1 (en) 2018-01-10
EP3266759A4 (en) 2018-10-17
JPWO2016143635A1 (en) 2017-12-14
TWI762440B (en) 2022-05-01
US20180044270A1 (en) 2018-02-15

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