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SG11201705165QA - Photomask blank, method for manufacturing photomask, and mask pattern formation method - Google Patents

Photomask blank, method for manufacturing photomask, and mask pattern formation method

Info

Publication number
SG11201705165QA
SG11201705165QA SG11201705165QA SG11201705165QA SG11201705165QA SG 11201705165Q A SG11201705165Q A SG 11201705165QA SG 11201705165Q A SG11201705165Q A SG 11201705165QA SG 11201705165Q A SG11201705165Q A SG 11201705165QA SG 11201705165Q A SG11201705165Q A SG 11201705165QA
Authority
SG
Singapore
Prior art keywords
photomask
mask pattern
pattern formation
manufacturing
formation method
Prior art date
Application number
SG11201705165QA
Inventor
Shigeo Irie
Takashi Yoshii
Keiichi Masunaga
Yukio Inazuki
Hideo Kaneko
Toyohisa Sakurada
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Priority claimed from PCT/JP2016/054225 external-priority patent/WO2016140044A1/en
Publication of SG11201705165QA publication Critical patent/SG11201705165QA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46Antireflective coatings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • G03F1/58Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80Etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
SG11201705165QA 2015-03-04 2016-02-15 Photomask blank, method for manufacturing photomask, and mask pattern formation method SG11201705165QA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015042216 2015-03-04
JP2016021469A JP6601245B2 (en) 2015-03-04 2016-02-08 Photomask blank, photomask manufacturing method, and mask pattern forming method
PCT/JP2016/054225 WO2016140044A1 (en) 2015-03-04 2016-02-15 Photomask blank, method for manufacturing photomask, and mask pattern formation method

Publications (1)

Publication Number Publication Date
SG11201705165QA true SG11201705165QA (en) 2017-09-28

Family

ID=56898564

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201705165QA SG11201705165QA (en) 2015-03-04 2016-02-15 Photomask blank, method for manufacturing photomask, and mask pattern formation method
SG10201908125S SG10201908125SA (en) 2015-03-04 2016-02-15 Photomask blank, method for manufacturing photomask, and mask pattern formation method

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201908125S SG10201908125SA (en) 2015-03-04 2016-02-15 Photomask blank, method for manufacturing photomask, and mask pattern formation method

Country Status (7)

Country Link
US (1) US10585345B2 (en)
EP (1) EP3267253B1 (en)
JP (1) JP6601245B2 (en)
KR (1) KR102140572B1 (en)
CN (1) CN107430328B (en)
SG (2) SG11201705165QA (en)
TW (1) TWI684062B (en)

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US11187972B2 (en) 2016-10-21 2021-11-30 Hoya Corporation Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device
JP6900872B2 (en) * 2016-12-26 2021-07-07 信越化学工業株式会社 Photomask blank and its manufacturing method
JP6900873B2 (en) * 2016-12-26 2021-07-07 信越化学工業株式会社 Photomask blank and its manufacturing method
JP6791031B2 (en) * 2017-06-13 2020-11-25 信越化学工業株式会社 Photomask blank and its manufacturing method
JP6753375B2 (en) * 2017-07-28 2020-09-09 信越化学工業株式会社 Photomask blank, photomask blank manufacturing method and photomask manufacturing method
US20220179300A1 (en) * 2019-03-07 2022-06-09 Hoya Corporation Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
JP7313166B2 (en) 2019-03-18 2023-07-24 Hoya株式会社 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
JP7303077B2 (en) * 2019-09-10 2023-07-04 アルバック成膜株式会社 Method for manufacturing mask blanks, method for manufacturing photomask, mask blanks and photomask
JP7280171B2 (en) * 2019-12-05 2023-05-23 信越化学工業株式会社 PHOTOMASK BLANK, PHOTOMASK MANUFACTURING METHOD, AND PHOTOMASK
TWI791990B (en) * 2020-05-15 2023-02-11 力晶積成電子製造股份有限公司 Method of forming photomask and method of manufacturing ion implantation mask
JP7331793B2 (en) * 2020-06-30 2023-08-23 信越化学工業株式会社 Photomask manufacturing method and photomask blank
JP7687269B2 (en) * 2022-05-13 2025-06-03 信越化学工業株式会社 Reflective photomask blank and method for manufacturing a reflective photomask

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JPS6385553A (en) 1986-09-30 1988-04-16 Toshiba Corp Mask substrate and mask pattern forming method
JPH0749558A (en) 1993-08-05 1995-02-21 Sony Corp Production of phase shift mask
US7022436B2 (en) * 2003-01-14 2006-04-04 Asml Netherlands B.V. Embedded etch stop for phase shift masks and planar phase shift masks to reduce topography induced and wave guide effects
US20060051681A1 (en) * 2004-09-08 2006-03-09 Phototronics, Inc. 15 Secor Road P.O. Box 5226 Brookfield, Conecticut Method of repairing a photomask having an internal etch stop layer
TWI375114B (en) * 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
JP4509050B2 (en) * 2006-03-10 2010-07-21 信越化学工業株式会社 Photomask blank and photomask
JP4737426B2 (en) 2006-04-21 2011-08-03 信越化学工業株式会社 Photomask blank
JP2008026500A (en) * 2006-07-20 2008-02-07 Dainippon Printing Co Ltd Photomask blank with high dry etching resistant polymer layer added and method of manufacturing photomask using the same
TWI453531B (en) * 2008-06-25 2014-09-21 Hoya Corp Phase shift mask blank and phase shift mask
JP4989800B2 (en) * 2008-09-27 2012-08-01 Hoya株式会社 Mask blank and transfer mask manufacturing method
JP5531880B2 (en) * 2010-09-21 2014-06-25 信越化学工業株式会社 Photomask blank and processing method thereof
KR20130132787A (en) * 2010-09-30 2013-12-05 호야 가부시키가이샤 Mask blank, method for producing same, and transfer mask
JP5949777B2 (en) 2011-10-28 2016-07-13 旭硝子株式会社 Method for manufacturing a reflective mask blank for EUV lithography
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JP5739375B2 (en) * 2012-05-16 2015-06-24 信越化学工業株式会社 Halftone phase shift mask blank and method of manufacturing halftone phase shift mask
KR102390253B1 (en) * 2013-01-15 2022-04-22 호야 가부시키가이샤 Mask blank, phase-shift mask, and method for manufacturing semiconductor device
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JP6258151B2 (en) * 2013-09-25 2018-01-10 信越化学工業株式会社 Photomask blank and manufacturing method thereof
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Also Published As

Publication number Publication date
EP3267253A4 (en) 2018-08-22
KR102140572B1 (en) 2020-08-03
EP3267253A1 (en) 2018-01-10
EP3267253B1 (en) 2022-08-31
JP6601245B2 (en) 2019-11-06
CN107430328A (en) 2017-12-01
CN107430328B (en) 2020-12-08
KR20170121208A (en) 2017-11-01
SG10201908125SA (en) 2019-10-30
US20180267398A1 (en) 2018-09-20
JP2016167052A (en) 2016-09-15
TW201642022A (en) 2016-12-01
US10585345B2 (en) 2020-03-10
TWI684062B (en) 2020-02-01

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