SE9702220D0 - A semiconductor device with a junction termination and a method for production thereof - Google Patents
A semiconductor device with a junction termination and a method for production thereofInfo
- Publication number
- SE9702220D0 SE9702220D0 SE9702220A SE9702220A SE9702220D0 SE 9702220 D0 SE9702220 D0 SE 9702220D0 SE 9702220 A SE9702220 A SE 9702220A SE 9702220 A SE9702220 A SE 9702220A SE 9702220 D0 SE9702220 D0 SE 9702220D0
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- junction
- semiconductor device
- production
- layers
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/051—Manufacture or treatment of Schottky diodes
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9702220A SE9702220D0 (sv) | 1997-06-11 | 1997-06-11 | A semiconductor device with a junction termination and a method for production thereof |
| US08/898,954 US6005261A (en) | 1997-06-11 | 1997-07-23 | Semiconductor device with a junction termination and a method for production thereof |
| PCT/SE1998/000772 WO1998057377A1 (en) | 1997-06-11 | 1998-04-28 | A semiconductor device with a junction termination and a method for production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9702220A SE9702220D0 (sv) | 1997-06-11 | 1997-06-11 | A semiconductor device with a junction termination and a method for production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE9702220D0 true SE9702220D0 (sv) | 1997-06-11 |
Family
ID=20407330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9702220A SE9702220D0 (sv) | 1997-06-11 | 1997-06-11 | A semiconductor device with a junction termination and a method for production thereof |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6005261A (sv) |
| SE (1) | SE9702220D0 (sv) |
| WO (1) | WO1998057377A1 (sv) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE9904710L (sv) * | 1999-12-22 | 2001-06-23 | Abb Ab | Halvledaranordning |
| US6573128B1 (en) | 2000-11-28 | 2003-06-03 | Cree, Inc. | Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same |
| US7033950B2 (en) * | 2001-12-19 | 2006-04-25 | Auburn University | Graded junction termination extensions for electronic devices |
| US9515135B2 (en) * | 2003-01-15 | 2016-12-06 | Cree, Inc. | Edge termination structures for silicon carbide devices |
| US7026650B2 (en) * | 2003-01-15 | 2006-04-11 | Cree, Inc. | Multiple floating guard ring edge termination for silicon carbide devices |
| WO2005119793A2 (en) * | 2004-05-28 | 2005-12-15 | Caracal, Inc. | Silicon carbide schottky diodes and fabrication method |
| US7560739B2 (en) * | 2004-06-29 | 2009-07-14 | Intel Corporation | Micro or below scale multi-layered heterostructure |
| US8901699B2 (en) | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
| US7615801B2 (en) | 2005-05-18 | 2009-11-10 | Cree, Inc. | High voltage silicon carbide devices having bi-directional blocking capabilities |
| US7800196B2 (en) * | 2008-09-30 | 2010-09-21 | Northrop Grumman Systems Corporation | Semiconductor structure with an electric field stop layer for improved edge termination capability |
| US9704718B2 (en) * | 2013-03-22 | 2017-07-11 | Infineon Technologies Austria Ag | Method for manufacturing a silicon carbide device and a silicon carbide device |
| US9461108B2 (en) | 2014-08-13 | 2016-10-04 | Fairchild Semiconductor Corporation | SiC power device having a high voltage termination |
| US11749770B2 (en) | 2018-10-15 | 2023-09-05 | Arizona Board Of Regents On Behalf Of Arizona State University | True hot-carrier solar cell and hot-carrier transfer |
| US10957759B2 (en) | 2018-12-21 | 2021-03-23 | General Electric Company | Systems and methods for termination in silicon carbide charge balance power devices |
| JP2023182011A (ja) * | 2020-11-06 | 2023-12-26 | 住友電気工業株式会社 | 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1230368A (sv) * | 1968-12-05 | 1971-04-28 | ||
| US4017340A (en) * | 1975-08-04 | 1977-04-12 | General Electric Company | Semiconductor element having a polymeric protective coating and glass coating overlay |
| JPS5933272B2 (ja) * | 1978-06-19 | 1984-08-14 | 株式会社日立製作所 | 半導体装置 |
| GB2045000A (en) * | 1979-03-19 | 1980-10-22 | Westinghouse Electric Corp | An asymmetric thyristor |
| JPS60250670A (ja) * | 1984-05-25 | 1985-12-11 | Mitsubishi Electric Corp | 半導体装置 |
| JPS6279667A (ja) * | 1985-10-03 | 1987-04-13 | Mitsubishi Electric Corp | 半導体装置 |
| EP0449951B1 (en) * | 1988-12-14 | 1995-03-15 | Cree Research, Inc. | Ultra-fast high temperature rectifying diode formed in silicon carbide |
| US5061972A (en) * | 1988-12-14 | 1991-10-29 | Cree Research, Inc. | Fast recovery high temperature rectifying diode formed in silicon carbide |
| US4918497A (en) * | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
| US5164218A (en) * | 1989-05-12 | 1992-11-17 | Nippon Soken, Inc. | Semiconductor device and a method for producing the same |
| WO1995034915A1 (en) * | 1994-06-13 | 1995-12-21 | Abb Research Ltd. | Semiconductor device in silicon carbide |
| US5585648A (en) * | 1995-02-03 | 1996-12-17 | Tischler; Michael A. | High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same |
-
1997
- 1997-06-11 SE SE9702220A patent/SE9702220D0/sv unknown
- 1997-07-23 US US08/898,954 patent/US6005261A/en not_active Expired - Lifetime
-
1998
- 1998-04-28 WO PCT/SE1998/000772 patent/WO1998057377A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| US6005261A (en) | 1999-12-21 |
| WO1998057377A1 (en) | 1998-12-17 |
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