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SE9903242D0 - A semiconductor device - Google Patents

A semiconductor device

Info

Publication number
SE9903242D0
SE9903242D0 SE9903242A SE9903242A SE9903242D0 SE 9903242 D0 SE9903242 D0 SE 9903242D0 SE 9903242 A SE9903242 A SE 9903242A SE 9903242 A SE9903242 A SE 9903242A SE 9903242 D0 SE9903242 D0 SE 9903242D0
Authority
SE
Sweden
Prior art keywords
layer
protecting
semiconductor device
crystalline
semiconductor
Prior art date
Application number
SE9903242A
Other languages
English (en)
Inventor
Mietek Bakowski
Christopher Harris
Jan Szmidt
Original Assignee
Acreo Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acreo Ab filed Critical Acreo Ab
Priority to SE9903242A priority Critical patent/SE9903242D0/sv
Publication of SE9903242D0 publication Critical patent/SE9903242D0/sv
Priority to KR1020027003329A priority patent/KR100732259B1/ko
Priority to EP00917573A priority patent/EP1214740A1/en
Priority to PCT/SE2000/000505 priority patent/WO2001020672A1/en
Priority to CA002384784A priority patent/CA2384784A1/en
Priority to AU38529/00A priority patent/AU3852900A/en
Priority to JP2001524151A priority patent/JP2004506312A/ja
Priority to US10/070,968 priority patent/US6670705B1/en
Priority to CN00812764A priority patent/CN1373902A/zh
Priority to HK03101185.0A priority patent/HK1049065A1/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3185Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
SE9903242A 1999-09-13 1999-09-13 A semiconductor device SE9903242D0 (sv)

Priority Applications (10)

Application Number Priority Date Filing Date Title
SE9903242A SE9903242D0 (sv) 1999-09-13 1999-09-13 A semiconductor device
KR1020027003329A KR100732259B1 (ko) 1999-09-13 2000-03-15 반도체 장치용 보호층
EP00917573A EP1214740A1 (en) 1999-09-13 2000-03-15 Protective layer for a semiconductor device
PCT/SE2000/000505 WO2001020672A1 (en) 1999-09-13 2000-03-15 Protective layer for a semiconductor device
CA002384784A CA2384784A1 (en) 1999-09-13 2000-03-15 Protective layer for a semiconductor device
AU38529/00A AU3852900A (en) 1999-09-13 2000-03-15 Protective layer for a semiconductor device
JP2001524151A JP2004506312A (ja) 1999-09-13 2000-03-15 半導体素子のための保護層
US10/070,968 US6670705B1 (en) 1999-09-13 2000-03-15 Protective layer for a semiconductor device
CN00812764A CN1373902A (zh) 1999-09-13 2000-03-15 半导体器件用的保护层
HK03101185.0A HK1049065A1 (zh) 1999-09-13 2003-02-18 半導體器件用的保護層

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9903242A SE9903242D0 (sv) 1999-09-13 1999-09-13 A semiconductor device

Publications (1)

Publication Number Publication Date
SE9903242D0 true SE9903242D0 (sv) 1999-09-13

Family

ID=20416953

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9903242A SE9903242D0 (sv) 1999-09-13 1999-09-13 A semiconductor device

Country Status (10)

Country Link
US (1) US6670705B1 (sv)
EP (1) EP1214740A1 (sv)
JP (1) JP2004506312A (sv)
KR (1) KR100732259B1 (sv)
CN (1) CN1373902A (sv)
AU (1) AU3852900A (sv)
CA (1) CA2384784A1 (sv)
HK (1) HK1049065A1 (sv)
SE (1) SE9903242D0 (sv)
WO (1) WO2001020672A1 (sv)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2860101B1 (fr) * 2003-09-22 2005-10-21 Commissariat Energie Atomique Protection de la surface du sic par une couche de gan
DE102004015403A1 (de) * 2004-03-26 2005-11-03 Infineon Technologies Ag Verwendung nanoskaliger Partikel zur Erzeugung kratzfester Schutzschichten auf Halbleiterchips
JP2005294772A (ja) * 2004-04-06 2005-10-20 Renesas Technology Corp 半導体装置
TWI393226B (zh) * 2004-11-04 2013-04-11 Taiwan Semiconductor Mfg 基於奈米管之填充物
US7361930B2 (en) * 2005-03-21 2008-04-22 Agilent Technologies, Inc. Method for forming a multiple layer passivation film and a device incorporating the same
US8445383B2 (en) * 2007-09-05 2013-05-21 The United States Of America, As Represented By The Secretary Of The Navy Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices
WO2009073501A2 (en) * 2007-11-30 2009-06-11 University Of Toledo System for diagnosis and treatment of photovoltaic and other semiconductor devices
US8574944B2 (en) * 2008-03-28 2013-11-05 The University Of Toledo System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby
US20100147369A1 (en) * 2008-12-12 2010-06-17 Chien-Min Sung Solar cell having nanodiamond quantum wells
DE102009002129A1 (de) 2009-04-02 2010-10-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hartstoffbeschichtete Körper und Verfahren zur Herstellung hartstoffbeschichteter Körper
US8492773B2 (en) * 2010-04-23 2013-07-23 Intersil Americas Inc. Power devices with integrated protection devices: structures and methods
EP2492239B1 (en) 2011-02-22 2020-08-26 Sciosense B.V. Integrated circuit with sensor and method of manufacturing such an integrated circuit
JP2013026265A (ja) * 2011-07-15 2013-02-04 Sony Corp プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法
KR102108572B1 (ko) * 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN102555328A (zh) * 2011-12-23 2012-07-11 大连兆阳软件科技有限公司 一种电脑屏幕保护膜
KR20180071695A (ko) * 2016-12-20 2018-06-28 주식회사 티씨케이 층간 경계를 덮는 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법
KR102054721B1 (ko) * 2016-12-20 2019-12-12 주식회사 티씨케이 층간 경계를 덮는 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법
CN108906974B (zh) * 2017-07-27 2020-04-14 北京华宇创新钽铌科技有限公司 钽喷丝头微孔冲孔过程中的薄膜润滑方法
CN110152710B (zh) * 2019-05-30 2021-11-12 云南民族大学 一种高稳定性TiO2纳米带-RGO-多孔氮化碳复合光催化剂及其制备方法
KR102181728B1 (ko) * 2019-12-05 2020-11-24 주식회사 티씨케이 층간 경계를 덮는 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968644A (en) * 1986-06-16 1990-11-06 At&T Bell Laboratories Method for fabricating devices and devices formed thereby
US5036373A (en) 1989-06-01 1991-07-30 Semiconductor Energy Laboratory Co., Ltd. Electric device with grains and an insulating layer
US5786068A (en) * 1991-05-03 1998-07-28 Advanced Refractory Technologies, Inc. Electrically tunable coatings
JPH0536373A (ja) * 1991-07-26 1993-02-12 Canon Inc 二次イオン質量分析法における絶縁性試料表面の正電荷補正方法
JP2869835B2 (ja) * 1992-05-18 1999-03-10 東京エレクトロン株式会社 処理装置
US5354717A (en) * 1993-07-29 1994-10-11 Motorola, Inc. Method for making a substrate structure with improved heat dissipation
SE9500013D0 (sv) * 1995-01-03 1995-01-03 Abb Research Ltd Semiconductor device having a passivation layer
US5766979A (en) * 1996-11-08 1998-06-16 W. L. Gore & Associates, Inc. Wafer level contact sheet and method of assembly

Also Published As

Publication number Publication date
US6670705B1 (en) 2003-12-30
KR100732259B1 (ko) 2007-06-25
AU3852900A (en) 2001-04-17
JP2004506312A (ja) 2004-02-26
KR20020044140A (ko) 2002-06-14
CA2384784A1 (en) 2001-03-22
WO2001020672A1 (en) 2001-03-22
HK1049065A1 (zh) 2003-04-25
CN1373902A (zh) 2002-10-09
EP1214740A1 (en) 2002-06-19

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