SE9903242D0 - A semiconductor device - Google Patents
A semiconductor deviceInfo
- Publication number
- SE9903242D0 SE9903242D0 SE9903242A SE9903242A SE9903242D0 SE 9903242 D0 SE9903242 D0 SE 9903242D0 SE 9903242 A SE9903242 A SE 9903242A SE 9903242 A SE9903242 A SE 9903242A SE 9903242 D0 SE9903242 D0 SE 9903242D0
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- protecting
- semiconductor device
- crystalline
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9903242A SE9903242D0 (sv) | 1999-09-13 | 1999-09-13 | A semiconductor device |
KR1020027003329A KR100732259B1 (ko) | 1999-09-13 | 2000-03-15 | 반도체 장치용 보호층 |
EP00917573A EP1214740A1 (en) | 1999-09-13 | 2000-03-15 | Protective layer for a semiconductor device |
PCT/SE2000/000505 WO2001020672A1 (en) | 1999-09-13 | 2000-03-15 | Protective layer for a semiconductor device |
CA002384784A CA2384784A1 (en) | 1999-09-13 | 2000-03-15 | Protective layer for a semiconductor device |
AU38529/00A AU3852900A (en) | 1999-09-13 | 2000-03-15 | Protective layer for a semiconductor device |
JP2001524151A JP2004506312A (ja) | 1999-09-13 | 2000-03-15 | 半導体素子のための保護層 |
US10/070,968 US6670705B1 (en) | 1999-09-13 | 2000-03-15 | Protective layer for a semiconductor device |
CN00812764A CN1373902A (zh) | 1999-09-13 | 2000-03-15 | 半导体器件用的保护层 |
HK03101185.0A HK1049065A1 (zh) | 1999-09-13 | 2003-02-18 | 半導體器件用的保護層 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9903242A SE9903242D0 (sv) | 1999-09-13 | 1999-09-13 | A semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SE9903242D0 true SE9903242D0 (sv) | 1999-09-13 |
Family
ID=20416953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9903242A SE9903242D0 (sv) | 1999-09-13 | 1999-09-13 | A semiconductor device |
Country Status (10)
Country | Link |
---|---|
US (1) | US6670705B1 (sv) |
EP (1) | EP1214740A1 (sv) |
JP (1) | JP2004506312A (sv) |
KR (1) | KR100732259B1 (sv) |
CN (1) | CN1373902A (sv) |
AU (1) | AU3852900A (sv) |
CA (1) | CA2384784A1 (sv) |
HK (1) | HK1049065A1 (sv) |
SE (1) | SE9903242D0 (sv) |
WO (1) | WO2001020672A1 (sv) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2860101B1 (fr) * | 2003-09-22 | 2005-10-21 | Commissariat Energie Atomique | Protection de la surface du sic par une couche de gan |
DE102004015403A1 (de) * | 2004-03-26 | 2005-11-03 | Infineon Technologies Ag | Verwendung nanoskaliger Partikel zur Erzeugung kratzfester Schutzschichten auf Halbleiterchips |
JP2005294772A (ja) * | 2004-04-06 | 2005-10-20 | Renesas Technology Corp | 半導体装置 |
TWI393226B (zh) * | 2004-11-04 | 2013-04-11 | Taiwan Semiconductor Mfg | 基於奈米管之填充物 |
US7361930B2 (en) * | 2005-03-21 | 2008-04-22 | Agilent Technologies, Inc. | Method for forming a multiple layer passivation film and a device incorporating the same |
US8445383B2 (en) * | 2007-09-05 | 2013-05-21 | The United States Of America, As Represented By The Secretary Of The Navy | Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices |
WO2009073501A2 (en) * | 2007-11-30 | 2009-06-11 | University Of Toledo | System for diagnosis and treatment of photovoltaic and other semiconductor devices |
US8574944B2 (en) * | 2008-03-28 | 2013-11-05 | The University Of Toledo | System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby |
US20100147369A1 (en) * | 2008-12-12 | 2010-06-17 | Chien-Min Sung | Solar cell having nanodiamond quantum wells |
DE102009002129A1 (de) | 2009-04-02 | 2010-10-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hartstoffbeschichtete Körper und Verfahren zur Herstellung hartstoffbeschichteter Körper |
US8492773B2 (en) * | 2010-04-23 | 2013-07-23 | Intersil Americas Inc. | Power devices with integrated protection devices: structures and methods |
EP2492239B1 (en) | 2011-02-22 | 2020-08-26 | Sciosense B.V. | Integrated circuit with sensor and method of manufacturing such an integrated circuit |
JP2013026265A (ja) * | 2011-07-15 | 2013-02-04 | Sony Corp | プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法 |
KR102108572B1 (ko) * | 2011-09-26 | 2020-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
CN102555328A (zh) * | 2011-12-23 | 2012-07-11 | 大连兆阳软件科技有限公司 | 一种电脑屏幕保护膜 |
KR20180071695A (ko) * | 2016-12-20 | 2018-06-28 | 주식회사 티씨케이 | 층간 경계를 덮는 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법 |
KR102054721B1 (ko) * | 2016-12-20 | 2019-12-12 | 주식회사 티씨케이 | 층간 경계를 덮는 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법 |
CN108906974B (zh) * | 2017-07-27 | 2020-04-14 | 北京华宇创新钽铌科技有限公司 | 钽喷丝头微孔冲孔过程中的薄膜润滑方法 |
CN110152710B (zh) * | 2019-05-30 | 2021-11-12 | 云南民族大学 | 一种高稳定性TiO2纳米带-RGO-多孔氮化碳复合光催化剂及其制备方法 |
KR102181728B1 (ko) * | 2019-12-05 | 2020-11-24 | 주식회사 티씨케이 | 층간 경계를 덮는 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4968644A (en) * | 1986-06-16 | 1990-11-06 | At&T Bell Laboratories | Method for fabricating devices and devices formed thereby |
US5036373A (en) | 1989-06-01 | 1991-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Electric device with grains and an insulating layer |
US5786068A (en) * | 1991-05-03 | 1998-07-28 | Advanced Refractory Technologies, Inc. | Electrically tunable coatings |
JPH0536373A (ja) * | 1991-07-26 | 1993-02-12 | Canon Inc | 二次イオン質量分析法における絶縁性試料表面の正電荷補正方法 |
JP2869835B2 (ja) * | 1992-05-18 | 1999-03-10 | 東京エレクトロン株式会社 | 処理装置 |
US5354717A (en) * | 1993-07-29 | 1994-10-11 | Motorola, Inc. | Method for making a substrate structure with improved heat dissipation |
SE9500013D0 (sv) * | 1995-01-03 | 1995-01-03 | Abb Research Ltd | Semiconductor device having a passivation layer |
US5766979A (en) * | 1996-11-08 | 1998-06-16 | W. L. Gore & Associates, Inc. | Wafer level contact sheet and method of assembly |
-
1999
- 1999-09-13 SE SE9903242A patent/SE9903242D0/sv unknown
-
2000
- 2000-03-15 KR KR1020027003329A patent/KR100732259B1/ko not_active IP Right Cessation
- 2000-03-15 CA CA002384784A patent/CA2384784A1/en not_active Abandoned
- 2000-03-15 JP JP2001524151A patent/JP2004506312A/ja active Pending
- 2000-03-15 AU AU38529/00A patent/AU3852900A/en not_active Abandoned
- 2000-03-15 EP EP00917573A patent/EP1214740A1/en not_active Withdrawn
- 2000-03-15 US US10/070,968 patent/US6670705B1/en not_active Expired - Fee Related
- 2000-03-15 WO PCT/SE2000/000505 patent/WO2001020672A1/en active IP Right Grant
- 2000-03-15 CN CN00812764A patent/CN1373902A/zh active Pending
-
2003
- 2003-02-18 HK HK03101185.0A patent/HK1049065A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US6670705B1 (en) | 2003-12-30 |
KR100732259B1 (ko) | 2007-06-25 |
AU3852900A (en) | 2001-04-17 |
JP2004506312A (ja) | 2004-02-26 |
KR20020044140A (ko) | 2002-06-14 |
CA2384784A1 (en) | 2001-03-22 |
WO2001020672A1 (en) | 2001-03-22 |
HK1049065A1 (zh) | 2003-04-25 |
CN1373902A (zh) | 2002-10-09 |
EP1214740A1 (en) | 2002-06-19 |
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