SE9604142L - Halvledaranordning och förfarande vid densamma - Google Patents

Halvledaranordning och förfarande vid densamma

Info

Publication number: SE9604142L
Authority: SE; Sweden
Prior art keywords: semiconductor device; collector region; voltage; lateral; common collector
Prior art date: 1996-11-13

Application number

SE9604142A

Other languages

Unknown language ( )

English (en)

Other versions

SE9604142D0 (sv

SE512661C2 (sv

Inventor

Anders Soederbaerg

Original Assignee

Ericsson Telefon Ab L M

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1996-11-13

Filing date

1996-11-13

Publication date

1998-05-14

1996-11-13 Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M

1996-11-13 Priority to SE9604142A priority Critical patent/SE512661C2/sv

1996-11-13 Publication of SE9604142D0 publication Critical patent/SE9604142D0/sv

1997-11-12 Priority to US08/968,213 priority patent/US6015982A/en

1997-11-13 Priority to CNB971812209A priority patent/CN1146047C/zh

1997-11-13 Priority to EP97913624A priority patent/EP0946983A1/en

1997-11-13 Priority to CA002271313A priority patent/CA2271313A1/en

1997-11-13 Priority to AU50762/98A priority patent/AU5076298A/en

1997-11-13 Priority to KR10-1999-7004140A priority patent/KR100526076B1/ko

1997-11-13 Priority to PCT/SE1997/001908 priority patent/WO1998021753A1/en

1997-11-13 Priority to JP52248298A priority patent/JP2001504275A/ja

1997-11-26 Priority to TW086117777A priority patent/TW367595B/zh

1998-05-14 Publication of SE9604142L publication Critical patent/SE9604142L/sv

2000-04-17 Publication of SE512661C2 publication Critical patent/SE512661C2/sv

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors

Landscapes

Bipolar Transistors (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)
Junction Field-Effect Transistors (AREA)

SE9604142A 1996-11-13 1996-11-13 Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma SE512661C2 (sv)

Priority Applications (10)

Application Number	Priority Date	Filing Date	Title
SE9604142A SE512661C2 (sv)	1996-11-13	1996-11-13	Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma
US08/968,213 US6015982A (en)	1996-11-13	1997-11-12	Lateral bipolar field effect mode hybrid transistor and method for operating the same
JP52248298A JP2001504275A (ja)	1996-11-13	1997-11-13	横型バイポーラ電界効果モード・ハイブリッド・トランジスタとその方法
CA002271313A CA2271313A1 (en)	1996-11-13	1997-11-13	Lateral bipolar field effect mode hybrid transistor and method for the same
EP97913624A EP0946983A1 (en)	1996-11-13	1997-11-13	Lateral bipolar field effect mode hybrid transistor and method for the same
CNB971812209A CN1146047C (zh)	1996-11-13	1997-11-13	横向双极型场效应复合晶体管及其制作方法
AU50762/98A AU5076298A (en)	1996-11-13	1997-11-13	Lateral bipolar field effect mode hybrid transistor and method for the same
KR10-1999-7004140A KR100526076B1 (ko)	1996-11-13	1997-11-13	반도체 장치 및 그 제조 방법
PCT/SE1997/001908 WO1998021753A1 (en)	1996-11-13	1997-11-13	Lateral bipolar field effect mode hybrid transistor and method for the same
TW086117777A TW367595B (en)	1996-11-13	1997-11-26	Lateral bipolar field effect mode hybrid transistor and method for the same

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
SE9604142A SE512661C2 (sv)	1996-11-13	1996-11-13	Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma

Publications (3)

Publication Number	Publication Date
SE9604142D0 SE9604142D0 (sv)	1996-11-13
SE9604142L true SE9604142L (sv)	1998-05-14
SE512661C2 SE512661C2 (sv)	2000-04-17

Family

ID=20404585

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SE9604142A SE512661C2 (sv)	1996-11-13	1996-11-13	Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma

Country Status (10)

Country	Link
US (1)	US6015982A (sv)
EP (1)	EP0946983A1 (sv)
JP (1)	JP2001504275A (sv)
KR (1)	KR100526076B1 (sv)
CN (1)	CN1146047C (sv)
AU (1)	AU5076298A (sv)
CA (1)	CA2271313A1 (sv)
SE (1)	SE512661C2 (sv)
TW (1)	TW367595B (sv)
WO (1)	WO1998021753A1 (sv)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2003045882A (ja) *	2001-07-27	2003-02-14	Nec Corp	半導体装置及びその設計方法
JP4591827B2 (ja) *	2005-05-24	2010-12-01	エルピーダメモリ株式会社	リセスチャネル構造を有するセルトランジスタを含む半導体装置およびその製造方法
US7700977B2 (en) *	2007-06-21	2010-04-20	Intersil Americas Inc.	Integrated circuit with a subsurface diode
US20100117153A1 (en) *	2008-11-07	2010-05-13	Honeywell International Inc.	High voltage soi cmos device and method of manufacture
CN102403321A (zh) *	2011-09-30	2012-04-04	上海新傲科技股份有限公司	半导体装置及制备方法
US9653455B1 (en) *	2015-11-10	2017-05-16	Analog Devices Global	FET—bipolar transistor combination
GB201604796D0 (en)	2015-11-10	2016-05-04	Analog Devices Global	A combined isolator and power switch
US9935628B2 (en)	2015-11-10	2018-04-03	Analog Devices Global	FET—bipolar transistor combination, and a switch comprising such a FET—bipolar transistor combination
US9698594B2 (en)	2015-11-10	2017-07-04	Analog Devices Global	Overvoltage protection device, and a galvanic isolator in combination with an overvoltage protection device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4139781A (en) *	1974-08-13	1979-02-13	Honeywell Inc.	Logic gate circuits
CA1131801A (en) *	1978-01-18	1982-09-14	Johannes A. Appels	Semiconductor device
JPS5553462A (en) *	1978-10-13	1980-04-18	Int Rectifier Corp	Mosfet element
US4705759B1 (en) *	1978-10-13	1995-02-14	Int Rectifier Corp	High power mosfet with low on-resistance and high breakdown voltage
NL186665C (nl) *	1980-03-10	1992-01-16	Philips Nv	Halfgeleiderinrichting.
US4982262A (en) *	1985-01-15	1991-01-01	At&T Bell Laboratories	Inverted groove isolation technique for merging dielectrically isolated semiconductor devices
US4823173A (en) *	1986-01-07	1989-04-18	Harris Corporation	High voltage lateral MOS structure with depleted top gate region
US5264719A (en) *	1986-01-07	1993-11-23	Harris Corporation	High voltage lateral semiconductor device
EP0251682A3 (en) *	1986-06-25	1989-12-06	Hewlett-Packard Company	Integrated bipolar-mos device
US4857772A (en) *	1987-04-27	1989-08-15	Fairchild Semiconductor Corporation	BIPMOS decoder circuit
JPH0812910B2 (ja) *	1988-09-05	1996-02-07	日本電気株式会社	化合物半導体装置およびその製造方法
US5359220A (en) *	1992-12-22	1994-10-25	Hughes Aircraft Company	Hybrid bipolar/field-effect power transistor in group III-V material system
SE500814C2 (sv) *	1993-01-25	1994-09-12	Ericsson Telefon Ab L M	Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning

1996
- 1996-11-13 SE SE9604142A patent/SE512661C2/sv not_active IP Right Cessation
1997
- 1997-11-12 US US08/968,213 patent/US6015982A/en not_active Expired - Fee Related
- 1997-11-13 AU AU50762/98A patent/AU5076298A/en not_active Abandoned
- 1997-11-13 CN CNB971812209A patent/CN1146047C/zh not_active Expired - Fee Related
- 1997-11-13 EP EP97913624A patent/EP0946983A1/en not_active Withdrawn
- 1997-11-13 CA CA002271313A patent/CA2271313A1/en not_active Abandoned
- 1997-11-13 WO PCT/SE1997/001908 patent/WO1998021753A1/en active IP Right Grant
- 1997-11-13 KR KR10-1999-7004140A patent/KR100526076B1/ko not_active IP Right Cessation
- 1997-11-13 JP JP52248298A patent/JP2001504275A/ja not_active Ceased
- 1997-11-26 TW TW086117777A patent/TW367595B/zh active

Also Published As

Publication number	Publication date
SE9604142D0 (sv)	1996-11-13
EP0946983A1 (en)	1999-10-06
KR100526076B1 (ko)	2005-11-03
TW367595B (en)	1999-08-21
CN1146047C (zh)	2004-04-14
AU5076298A (en)	1998-06-03
WO1998021753A1 (en)	1998-05-22
US6015982A (en)	2000-01-18
JP2001504275A (ja)	2001-03-27
KR20000053182A (ko)	2000-08-25
SE512661C2 (sv)	2000-04-17
CN1242874A (zh)	2000-01-26
CA2271313A1 (en)	1998-05-22

Publication	Publication Date	Title
KR970072205A (ko)	1997-11-07	에스. 오. 아이(soi)형 트랜지스터 및 그 제조방법
KR950034767A (ko)	1995-12-28	Mis형 반도체장치
KR830009653A (ko)	1983-12-22	집적회로의 보호장치
SE8703269L (sv)	1989-02-25	Foerbaettrad konstruktion hos sos-transistor
EP0805499A3 (en)	1997-11-26	High withstand voltage M I S field effect transistor and semiconductor integrated circuit
KR950007022A (ko)	1995-03-21	개선된 소오스-하이 성능을 갖는 실리콘 절연체의 트랜지스터
EP0936676A3 (en)	1999-12-15	MOS field effect transistors and its method of fabrication
JPH03157974A (ja)	1991-07-05	縦型電界効果トランジスタ
SE8009091L (sv)	1981-09-11	Halvledaranordning
ATE373318T1 (de)	2007-09-15	Integration bipolarer und cmos bauelemente für 0.1 mikrometer transistoren
KR970067928A (ko)	1997-10-13	단락 애노우드 수평형 절연 게이트 바이폴라 트랜지스터
KR960036128A (ko)	1996-10-28	실리콘 탄화물 금속 산화물 반도체 전계효과 트랜지스터
WO1998005075A3 (en)	1998-03-05	Semiconductor component with linear current-to-voltage characteristics
SE9604142D0 (sv)	1996-11-13	Halvledaranordning och förfarande vid densamma
BR9007213A (pt)	1992-02-18	Estrutura de transistor fina,dieletricamente isolada,residente em ilha,tendo baixa resistencia de coletor
US5448104A (en)	1995-09-05	Bipolar transistor with base charge controlled by back gate bias
DE60141459D1 (de)	2010-04-15	Halbleiterbauelement und dessen herstellungsverfahren
WO2006132704A3 (en)	2007-04-05	High voltage igbt semiconductor device and method of manufacture
US5939759A (en)	1999-08-17	Silicon-on-insulator device with floating collector
KR960026426A (ko)	1996-07-22	바이폴라 반도체 장치 및 그 제조방법
KR960002806A (ko)	1996-01-26	바이폴라 트랜지스터를 가지는 반도체 장치 및 그 제조방법
SE9601172D0 (sv)	1996-03-27	Insulated gate bipolar transistor having a trench and a method for procuction thereof
Kuehne et al.	1996	Deep sub-micron SOI MOSFET with buried body strap
KR910010700A (ko)	1991-06-29	기생전류에 보호되는 수직형 모놀리식 반도체 전원장치
KR970067618A (ko)	1997-10-13	실리콘-온-인슐레이터(soi) 소자 및 그 제조방법

Legal Events

Date	Code	Title	Description
2008-07-15	NUG	Patent has lapsed