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SE9601175D0 - A method for producing a semiconductor device by the use of an implanting step and a device produced thereby - Google Patents

A method for producing a semiconductor device by the use of an implanting step and a device produced thereby

Info

Publication number
SE9601175D0
SE9601175D0 SE9601175A SE9601175A SE9601175D0 SE 9601175 D0 SE9601175 D0 SE 9601175D0 SE 9601175 A SE9601175 A SE 9601175A SE 9601175 A SE9601175 A SE 9601175A SE 9601175 D0 SE9601175 D0 SE 9601175D0
Authority
SE
Sweden
Prior art keywords
producing
forming
conductivity type
layer
semiconductor device
Prior art date
Application number
SE9601175A
Other languages
English (en)
Inventor
Adolf Schoener
Kurt Rottner
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9601175A priority Critical patent/SE9601175D0/sv
Publication of SE9601175D0 publication Critical patent/SE9601175D0/sv
Priority to US08/636,952 priority patent/US5674765A/en
Priority to JP53433597A priority patent/JP4691224B2/ja
Priority to EP97915824A priority patent/EP0890187B1/en
Priority to DE69736891T priority patent/DE69736891T2/de
Priority to PCT/SE1997/000534 priority patent/WO1997036319A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Recrystallisation Techniques (AREA)
SE9601175A 1996-03-27 1996-03-27 A method for producing a semiconductor device by the use of an implanting step and a device produced thereby SE9601175D0 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE9601175A SE9601175D0 (sv) 1996-03-27 1996-03-27 A method for producing a semiconductor device by the use of an implanting step and a device produced thereby
US08/636,952 US5674765A (en) 1996-03-27 1996-04-24 Method for producing a semiconductor device by the use of an implanting step
JP53433597A JP4691224B2 (ja) 1996-03-27 1997-03-26 注入ステップを使用して半導体デバイスを製造する方法およびこの方法により製造されるデバイス
EP97915824A EP0890187B1 (en) 1996-03-27 1997-03-26 A method for producing a semiconductor device by the use of an implanting step
DE69736891T DE69736891T2 (de) 1996-03-27 1997-03-26 Verfahren zur herstellung eines halbleiterbauelementes mit einem implantierungsschritt
PCT/SE1997/000534 WO1997036319A1 (en) 1996-03-27 1997-03-26 A method for producing a semiconductor device by the use of an implanting step and a device produced thereby

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9601175A SE9601175D0 (sv) 1996-03-27 1996-03-27 A method for producing a semiconductor device by the use of an implanting step and a device produced thereby
US08/636,952 US5674765A (en) 1996-03-27 1996-04-24 Method for producing a semiconductor device by the use of an implanting step

Publications (1)

Publication Number Publication Date
SE9601175D0 true SE9601175D0 (sv) 1996-03-27

Family

ID=26662560

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9601175A SE9601175D0 (sv) 1996-03-27 1996-03-27 A method for producing a semiconductor device by the use of an implanting step and a device produced thereby

Country Status (3)

Country Link
US (1) US5674765A (sv)
SE (1) SE9601175D0 (sv)
WO (1) WO1997036319A1 (sv)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9700215L (sv) * 1997-01-27 1998-02-18 Abb Research Ltd Förfarande för framställning av ett halvledarskikt av SiC av 3C-polytypen ovanpå ett halvledarsubstratskikt utnyttjas wafer-bindningstekniken
SE9701724D0 (sv) * 1997-05-09 1997-05-09 Abb Research Ltd A pn-diode of SiC and a method for production thereof
JP4935741B2 (ja) * 2008-04-02 2012-05-23 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP6042658B2 (ja) * 2011-09-07 2016-12-14 トヨタ自動車株式会社 ＳｉＣ半導体素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4775882A (en) * 1986-11-19 1988-10-04 Rockwell International Corporation Lateral bipolar transistor
US4945394A (en) * 1987-10-26 1990-07-31 North Carolina State University Bipolar junction transistor on silicon carbide
US4947218A (en) * 1987-11-03 1990-08-07 North Carolina State University P-N junction diodes in silicon carbide
US5270554A (en) * 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide

Also Published As

Publication number Publication date
US5674765A (en) 1997-10-07
WO1997036319A1 (en) 1997-10-02

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